JPH02237106A - Charged particle beam lithography equipment - Google Patents

Charged particle beam lithography equipment

Info

Publication number
JPH02237106A
JPH02237106A JP5854489A JP5854489A JPH02237106A JP H02237106 A JPH02237106 A JP H02237106A JP 5854489 A JP5854489 A JP 5854489A JP 5854489 A JP5854489 A JP 5854489A JP H02237106 A JPH02237106 A JP H02237106A
Authority
JP
Japan
Prior art keywords
diameter
diaphragm
opening diameter
variable
aperture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5854489A
Other languages
Japanese (ja)
Inventor
Korehito Matsuda
松田 維人
Kazumi Iwatate
岩立 和巳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP5854489A priority Critical patent/JPH02237106A/en
Publication of JPH02237106A publication Critical patent/JPH02237106A/en
Pending legal-status Critical Current

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  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To prevent a displacement of a beam axis by a changeover operation of a beam diameter or to prevent a thermal strain of a beam diaphragm and to change over the beam diameter at high speed and with high accuracy by providing a variable beam-limiting diaphragm whose opening diameter is concentric and variable. CONSTITUTION:A variable beam-limiting diaphragm 7 is connected to a tip part 10A of an arm 10 protruding from a diaphragm-blade operation ring 9; the diaphragm-blade operation ring 9 is turned by a driving rotary sheet 11 which moves the arm 10; an opening diameter 7A is formed in the central part 12B by a plurality of diaphragm blades 12. Accordingly, the opening diameter 7A can be changed arbitrarily; a beam diameter and a beam current can be controlled. Since the opening diameter 7A can be changed in a concentric circle shape by using a beam axis X as its center, a displacement of the beam axis X can be neglected; in addition, since the opening diameter 7A is always irradiated with an electron beam 6, it is thermally stable and a change in the opening diameter 7A by a thermal strain can be made extremely small. Thereby, it is possible to suppress an influence by the displacement of the beam axis or by the thermal strain; a high-speed changeover operation can be realized; a high-speed and a high-accuracy lithographic operation can be achieved.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、荷電ビームにより微細な図形を高速に描画す
る荷電ビーム描画装置に関するものである. (従来の技術) 半導体集積回路あるいは光学部品など微細加工を必要と
する分野に電子あるいはイオンビームなどの荷電ビーム
描画装置が用いられてきている,描画すべきバタンか@
細になる程、荷電ビ・−ムのビーム径を微細にする必要
はあるが、得られるビ−ム電流は小さくなり膚百時間の
増大につながる.このため、ビーム径を大・小径に切り
替えてバタンを描画する装置が考案されている.すなわ
ち、大きなバタンはビーム電流の大きな大ビーム径で、
小さなバタンは小ビーム径で描画する方法である.こう
することで、大小パタンの混在した図形を高速に描丙で
きる. 従来、ビーム径を切り替えるために第3図のような方法
を採用していた.1は電子銃、2,3は電子レンズ、4
は試料、5は複数の開口径5A,5Bを有するビーム制
限絞である.第4図はビーム制限絞の平面図である.電
子銃1から放射された電子ビーム6は電子レンズ2およ
び3で収束されて試料4上で結像する.一般に、電子レ
ンズ3は対物レンズと呼ばれ、ここに電子ビームの開き
角を制限するビーム制限絞5を挿入する.このビーム制
限絞5により試料4上で得られるビーム電流は制限され
る.今、試料4から見た電子ビーム6の開き半角をαと
すると得られるビーム電流はl一πβαgとなる.ここ
に、1はビーム電流、βは輝度である.αはビーム制限
絞5の開口径5Aまたは5Bおよびビーム制限絞5の面
と試料4の面の距離により決まる.したがって、ビーム
制限絞5の開口径5Aまたは5Bを変えることによりα
は変わり、ビーム電流量も制御できる.一方、試料4の
面上で得られるビーム径は、αを数mradから数十m
radの範囲で変化させる場合、αの増大とともに大き
くなる.したがって、ビーム制限絞5の開口径5Aまた
は5Bを適当に変えると同一レンズ条件下において、ビ
ーム径およびビーム電流を変えることが可能となる。
DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a charged beam drawing device that draws fine figures at high speed using a charged beam. (Prior art) Charged beam lithography systems such as electron or ion beams have been used in fields that require microfabrication such as semiconductor integrated circuits and optical components.
As the beam becomes thinner, it is necessary to make the beam diameter of the charged beam finer, but the resulting beam current becomes smaller, leading to an increase in time of 100 hours. For this reason, a device has been devised that draws the button by switching the beam diameter between large and small. In other words, a large bang is a large beam diameter with a large beam current,
A small bang is a method of drawing with a small beam diameter. By doing this, it is possible to draw figures with a mixture of large and small patterns at high speed. Conventionally, the method shown in Figure 3 was used to switch the beam diameter. 1 is an electron gun, 2 and 3 are electron lenses, 4
is a sample, and 5 is a beam limiting diaphragm having multiple aperture diameters 5A and 5B. Figure 4 is a plan view of the beam limiting diaphragm. An electron beam 6 emitted from an electron gun 1 is focused by electron lenses 2 and 3 and formed into an image on a sample 4. Generally, the electron lens 3 is called an objective lens, and a beam limiting diaphragm 5 is inserted therein to limit the aperture angle of the electron beam. The beam current obtained on the sample 4 is limited by the beam limiting diaphragm 5. Now, if the half-angle of opening of the electron beam 6 seen from the sample 4 is α, the beam current obtained is l−πβαg. Here, 1 is the beam current and β is the brightness. α is determined by the aperture diameter 5A or 5B of the beam limiting diaphragm 5 and the distance between the surface of the beam limiting diaphragm 5 and the surface of the sample 4. Therefore, by changing the aperture diameter 5A or 5B of the beam limiting diaphragm 5, α
can be changed, and the amount of beam current can also be controlled. On the other hand, the beam diameter obtained on the surface of sample 4 is α from several mrad to several tens of meters.
When changing within the range of rad, it increases as α increases. Therefore, by appropriately changing the aperture diameter 5A or 5B of the beam limiting diaphragm 5, it is possible to change the beam diameter and beam current under the same lens conditions.

(発明が解決しようとする課題) このようなビーム径切り替えのため、第4図に示すよう
に、従来は同一平面上に複数の開口径5Aまたは5Bを
有するビーム制限絞5を用い、このビーム制限絞5をス
テップ送りして開口径5Aまたは5Bを変えていた.し
かし、このような方法では、ステップ送り時のバックフ
ラッシュのため正確な位置決めがむずかしく、かえって
ビーム軸Xが狂うことによる非点収差の増大の原因とな
っていた.また、ビーム制限絞5の間口径を5Aから5
Bへ(またその逆)変えた時に生じる局所的な熱歪のた
め、ビーム制限絞5の開口径5Aまたは5Bが変化し、
ビーム電流あるいはビーム径が数分間にわたって変動し
たりする問題があった.このため、ビーム制限絞5の開
口径5A,5Bを変える毎に待ち時間が必要になったり
、場合によっては電子ビーム6のビーム軸Xの調整が必
要になるといった無駄時間が増し、ビーム径切り替えの
主旨となる高速描画を可能にすることが困難となってい
た. 本発明は、これらの欠点を除去するため、ビーム制限絞
の径を同心状に可変できる構造にしたもので、ビーム径
の切り替えに伴うビーム軸のずれあるいはビーム絞の熱
歪を防ぎ、高速・高精度にビーム径の切り替えを可能に
した荷電ビーム描画装置を提供することを目的とする. (課題を解決するための手段) 本発明は上記目的を達成するため、ビーム径またはビー
ム電流値を複数段に切り替える手段を有する荷電ビーム
描画装置において、該切り替え手段として開口径が同心
状で可変となる可変ビーム制限絞を具備することを特徴
とする荷電ビーム描画装置を要旨とする. (作用) 本発明は上記構成により、開口径の位置を変えることな
くビーム径が変えられ、ビーム軸ずれあるいはビーム絞
の熱歪を無くすることができる。
(Problem to be Solved by the Invention) In order to switch the beam diameter as described above, as shown in FIG. The aperture diameter 5A or 5B was changed by stepping the limiting diaphragm 5. However, in such a method, accurate positioning is difficult due to backflash during step feed, and the beam axis X becomes deviated, causing an increase in astigmatism. Also, the diameter of the beam limiting diaphragm 5 is changed from 5A to 5A.
Due to the local thermal strain that occurs when changing to B (and vice versa), the aperture diameter 5A or 5B of the beam limiting diaphragm 5 changes,
There was a problem in which the beam current or beam diameter fluctuated over several minutes. For this reason, every time the aperture diameters 5A and 5B of the beam limiting diaphragm 5 are changed, waiting time is required, and in some cases, the beam axis X of the electron beam 6 needs to be adjusted, which increases wasted time. It was difficult to achieve high-speed drawing, which is the main purpose of In order to eliminate these drawbacks, the present invention has a structure in which the diameter of the beam limiting diaphragm can be varied concentrically, thereby preventing deviation of the beam axis or thermal distortion of the beam diaphragm caused by switching the beam diameter, and achieving high-speed and The purpose of this project is to provide a charged beam lithography system that enables highly accurate beam diameter switching. (Means for Solving the Problems) In order to achieve the above object, the present invention provides a charged beam lithography apparatus having means for switching the beam diameter or beam current value in multiple stages, in which the aperture diameter is concentrically variable as the switching means. The gist of this paper is a charged beam lithography system characterized by a variable beam limiting aperture. (Function) With the above configuration, the present invention can change the beam diameter without changing the position of the aperture diameter, and can eliminate beam axis deviation or thermal distortion of the beam diaphragm.

(実施例) 以下、本発明の実施例を図に沿って説明する.なお、実
施例は一つの例示であって、本発明の精神を逸脱しない
範囲で、種々の変更あるいは改良を行いうることは言う
までもない。
(Example) Examples of the present invention will be described below with reference to the drawings. Note that the embodiments are merely illustrative, and it goes without saying that various changes and improvements can be made without departing from the spirit of the present invention.

第1図は本発明の一実施例を示す図であって、1は電子
銃、2および3は電子レンズ、4は試料、6は電子ビー
ム、7は可変ビーム制限絞である.電子銃1から放射さ
れた電子ピーム6は電子レンズ2および3により収束さ
れて試料4に到達するが、その時のビーム径あるいはビ
ーム電流はビーム軸Xを中心に左右対称に可動する可変
ビーム制限絞7によって自由に可変できる.この可変ビ
ーム制限絞7は、第2図に示すように、外側環状板8の
内周縁にはまり合って自由に回動し得る絞り羽根作動リ
ング9と、この絞り羽根作動リング9を回動するため絞
り羽根作動リング9から突設したアーム10の先端部1
0Aに接続し、該アーム10を動かすようにした駆動回
転板11と、上記絞り羽根作動リング9に外端突起部1
2Aでビンにより回動自在に支持され、絞り羽根作動リ
ング9が回動ずることにより互いの内端側の中央部12
Bに開口径7A(第1図参照)が形成されるようになる
数枚ないし十数枚の絞り羽根l2とから成っている.上
記駆動回転板11はモータl3に接続され、外部制1′
n装置(図示せず)により任意角の回転が可能となって
いる. 図において、Bの位置からAの位置へアーム10を回転
すれば、絞り羽根12は同心円状に開口径7A(第1図
参照)を連続的に広げることになる。
FIG. 1 shows an embodiment of the present invention, in which 1 is an electron gun, 2 and 3 are electron lenses, 4 is a sample, 6 is an electron beam, and 7 is a variable beam limiting aperture. The electron beam 6 emitted from the electron gun 1 is focused by electron lenses 2 and 3 and reaches the sample 4, but the beam diameter or beam current at that time is controlled by a variable beam limiting aperture that can be moved symmetrically around the beam axis X. 7 can be freely varied. As shown in FIG. 2, the variable beam limiting diaphragm 7 includes an aperture blade operating ring 9 that fits into the inner peripheral edge of the outer annular plate 8 and can rotate freely, and a aperture blade operating ring 9 that rotates the aperture blade operating ring 9. The tip 1 of the arm 10 protruding from the aperture blade operating ring 9
0A to move the arm 10, and an outer end protrusion 1 on the aperture blade operating ring 9.
2A is rotatably supported by a bottle, and when the aperture blade operating ring 9 rotates, the center portions 12 on the inner end sides of each other are rotated.
It consists of several to ten or more diaphragm blades l2 that form an aperture diameter 7A (see Figure 1) at B. The driving rotary plate 11 is connected to a motor l3, and the external control plate 1'
An arbitrary angle rotation is possible using the n device (not shown). In the figure, when the arm 10 is rotated from position B to position A, the aperture blades 12 concentrically widen the aperture diameter 7A (see FIG. 1).

このようにして、任意の開口径7Aを変えることができ
、これによってビーム径およびビーム電流を制御するこ
とが可能となる。
In this way, the arbitrary aperture diameter 7A can be changed, thereby making it possible to control the beam diameter and beam current.

第1図に示すように、可変ビーム制限絞7の開口径7A
はビーム軸Xを中心に同心円状に変えられるので、ビー
ム径の切り替えに伴うビーム軸Xのずれは無視できるう
え、可変ビーム制限絞7の開口径7Aは常時電子ビーム
6を照射されているため熱的には安定で、熱歪による開
口径7Aの変化は極めて小さくできる。
As shown in FIG. 1, the aperture diameter 7A of the variable beam limiting diaphragm 7
can be changed in a concentric manner around the beam axis It is thermally stable, and changes in the aperture diameter 7A due to thermal strain can be made extremely small.

したがって、切り替えた直後から所望のビーム径および
ビーム電流が得られる.この切り替えに要する時間は高
々数ms程度であり、従来より大幅な高速化が図れる. 本実施例では荷電ビームとして電子線を用いたが、これ
に限定されるものではな《、イオンビームを用いても同
様の装置構成が可能である.また、本発明の主旨によれ
ば、本実施例で用いた可変ビーム制限絞以外にも同心状
に開口径が可変となる構造の絞りであれば、使用し得る
ことは明白である。
Therefore, the desired beam diameter and beam current can be obtained immediately after switching. The time required for this switching is approximately several milliseconds at most, which is significantly faster than conventional methods. Although an electron beam was used as the charged beam in this example, the present invention is not limited to this; a similar device configuration is also possible using an ion beam. Further, according to the gist of the present invention, it is clear that any aperture having a structure in which the aperture diameter is concentrically variable can be used in addition to the variable beam limiting aperture used in this embodiment.

(発明の効果) 以上説明したよ・)に、本発明はビーム径またはビーム
電流値を複数段に切り替える手段を有する荷電ビーム描
画装置において、該切り替え手段として開口径が同心状
で可変となる可変ビーム制限絞を具備することにより、
ビーム径あるいはビーム電流の切り替え時に、ビーム軸
のずれあるいは熱歪の影響を抑えることができるため高
速に切り替え可能となり、高速・高精度な描画を達成す
ることができる.
(Effects of the Invention) As explained above, the present invention provides a charged beam lithography apparatus having means for switching the beam diameter or beam current value in multiple steps, in which the aperture diameter is concentrically variable. By having a beam limiting diaphragm,
When switching the beam diameter or beam current, it is possible to suppress the effects of beam axis misalignment or thermal distortion, making it possible to switch quickly and achieve high-speed, high-precision writing.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例を示す装置説明図、第2図は
可変ビーム制限絞の斜視図、第3図は従来装置の説明図
、第4図はビーム制限絞の平面図である. 1・・・・電子銃 2,3・・電子レンズ 4・・・・試料 5・・・・複数の開口径を有するビーム制限絞6・・・
・電子ビーム 7・・・・可変ビーム制限絞 外側環状板 絞り羽根作動リング アーム 駆動回転板 絞り羽根 モータ @1図 第2図
FIG. 1 is an explanatory diagram of a device showing an embodiment of the present invention, FIG. 2 is a perspective view of a variable beam limiting diaphragm, FIG. 3 is an explanatory diagram of a conventional device, and FIG. 4 is a plan view of the beam limiting diaphragm. .. 1... Electron guns 2, 3... Electron lens 4... Sample 5... Beam limiting diaphragm 6 with multiple aperture diameters...
・Electron beam 7...Variable beam limiting diaphragm Outer annular plate diaphragm blade actuation Ring arm drive Rotating plate diaphragm blade motor @1 Figure 2

Claims (1)

【特許請求の範囲】[Claims]  ビーム径またはビーム電流値を複数段に切り替える手
段を有する荷電ビーム描画装置において、該切り替え手
段として開口径が同心状で可変となる可変ビーム制限絞
を具備することを特徴とする荷電ビーム描画装置。
A charged beam lithography apparatus having a means for switching a beam diameter or a beam current value in multiple stages, characterized in that the switching means includes a variable beam limiting aperture whose aperture diameter is concentrically variable.
JP5854489A 1989-03-10 1989-03-10 Charged particle beam lithography equipment Pending JPH02237106A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5854489A JPH02237106A (en) 1989-03-10 1989-03-10 Charged particle beam lithography equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5854489A JPH02237106A (en) 1989-03-10 1989-03-10 Charged particle beam lithography equipment

Publications (1)

Publication Number Publication Date
JPH02237106A true JPH02237106A (en) 1990-09-19

Family

ID=13087391

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5854489A Pending JPH02237106A (en) 1989-03-10 1989-03-10 Charged particle beam lithography equipment

Country Status (1)

Country Link
JP (1) JPH02237106A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004038508A1 (en) * 2002-10-28 2004-05-06 Matsushita Electric Industrial Co., Ltd. Electron beam exposure method and electron beam exposure system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004038508A1 (en) * 2002-10-28 2004-05-06 Matsushita Electric Industrial Co., Ltd. Electron beam exposure method and electron beam exposure system
US7176471B2 (en) 2002-10-28 2007-02-13 Matsushita Electric Industrial Co., Ltd. Electron beam exposure method and electron beam exposure apparatus

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