JPH02234507A - Surface acoustic wave device - Google Patents
Surface acoustic wave deviceInfo
- Publication number
- JPH02234507A JPH02234507A JP5557389A JP5557389A JPH02234507A JP H02234507 A JPH02234507 A JP H02234507A JP 5557389 A JP5557389 A JP 5557389A JP 5557389 A JP5557389 A JP 5557389A JP H02234507 A JPH02234507 A JP H02234507A
- Authority
- JP
- Japan
- Prior art keywords
- piezoelectric substrate
- electrode fingers
- carbon film
- electrode
- saw device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 24
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 abstract description 17
- 239000007789 gas Substances 0.000 abstract description 13
- 239000006227 byproduct Substances 0.000 abstract description 9
- 150000001805 chlorine compounds Chemical class 0.000 abstract description 8
- 238000001312 dry etching Methods 0.000 abstract description 8
- 238000000576 coating method Methods 0.000 abstract description 7
- 239000011248 coating agent Substances 0.000 abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 5
- 150000002894 organic compounds Chemical class 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract description 2
- 238000005530 etching Methods 0.000 description 10
- 230000007797 corrosion Effects 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 5
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 5
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 150000001721 carbon Chemical class 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910001424 calcium ion Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
この発明は、表面弾性波デバイス(以下、SAWデバイ
スと略称する。)に関するものであって、その表面に炭
素被膜を形成することにより耐食性を向上せしめたもの
である。Detailed Description of the Invention [Industrial Application Field] The present invention relates to a surface acoustic wave device (hereinafter abbreviated as SAW device), which improves corrosion resistance by forming a carbon film on its surface. It has been improved.
[従来技術およびその課題]
固体表面を伝播する表面弾性波を利用することにより、
VHF帯からUHF帯にかけての信号処理を行うSAW
デバイスとしては、たとえば第2図および第3図に示し
たものが知られている。第2図はこのSAWデバイスの
斜視図であり、第3図は第2図に示したSAWデバイス
の断面図である。このSAWデバイスは、L +N b
o 3(以下、LNOと略称する。)やLiTaOs(
以下、LTOと略称する。)等の圧電体基板l上に、ア
ルミニウムー銅、アルミニウムーチタン等のアルミニウ
ム合金またはアルミニウムからなる櫛型の一対の電極指
2、2を形成し、この電極指2、2のそれぞれに入力端
子3、3および出力.端子4、4を接続してなるもので
ある。このようなSAWデバイスは、第4図ないし第8
図に示したような通常のホトリソグラフィ工程によって
製造することができる。■(電極膜形成工程)まず表面
が平滑なLNOまたはLTO等からなる圧電体基板lを
用意し、第4図に示したように、この圧電体基板l上に
蒸着等の通常の薄膜形成手段により電極膜5を形成する
。この電極膜5は、後のエッチング工程によって櫛型の
電極指2、2となるものであって、アルミニウムまたは
アルミニウム合金からなるものである。■(レジスト塗
布工程)次に第5図に示したように、上記電極膜5上に
、レジストをスビンコート法等の通常の塗布手段により
塗布してレジスト膜6を形成する。■(at光工程)次
に、第6図に示したように、形成すべき電極指2、2と
同パターンのホトマクス7を介して、レジスト膜6上に
光を照射してパターンを転写する。■(現像工程)第7
図に示したように、レジスト膜6・・・を現像する。な
お、この例ではレジストはボジ型であるが、ネガ型のレ
ジストを用いた場合にも同様の工程によって電極指2、
2が形成可能なのは言うまでもない。■(エッチング工
程)第8図に示したように、エッチングによりレジスト
膜6・・・でマスクされていない部分の電極膜2を除去
し、電極指2、2を圧電体基板l上に形成した後、レジ
スト膜6・・・を除去して、第3図に示したようなSA
Wデバイスを得る。 ところで従来、上記エッチング工
程は、たとえばリン酸:酢酸;硝酸=15:3:1の割
合で混合したエッチング液を用いたウェットエッチング
によって行っていた。ところが近年、SAWデバイスの
使用周波数の高周波化に伴い、電極指バターンの微細化
が望まれ、アンダーカットの少ない異方性エッチングが
可能なドライエッチングによる加工が必要となってきた
。このドライエッチングは、たとえばBCQ3、CQI
, SiC(!4、CCf2.等の塩素化合物からなる
エッチングガスを高周波雰囲気下でプラズマ化し、生起
した化学的活性の高いCeラジカルやCRイオンによっ
て、マスクされていない部分の電極膜5を選択的にエッ
チングするものである。[Prior art and its problems] By using surface acoustic waves propagating on solid surfaces,
SAW that processes signals from VHF band to UHF band
As devices, for example, those shown in FIGS. 2 and 3 are known. FIG. 2 is a perspective view of this SAW device, and FIG. 3 is a sectional view of the SAW device shown in FIG. This SAW device has L +N b
o 3 (hereinafter abbreviated as LNO) and LiTaOs (
Hereinafter, it will be abbreviated as LTO. ), a pair of comb-shaped electrode fingers 2, 2 made of an aluminum alloy such as aluminum-copper, aluminum-titanium, or aluminum are formed on a piezoelectric substrate l such as 3, 3 and output. It is formed by connecting terminals 4 and 4. Such SAW devices are shown in Figures 4 to 8.
It can be manufactured by a normal photolithography process as shown in the figure. (Electrode film forming process) First, a piezoelectric substrate l made of LNO or LTO with a smooth surface is prepared, and as shown in FIG. The electrode film 5 is formed by the following steps. This electrode film 5 becomes comb-shaped electrode fingers 2, 2 in a later etching process, and is made of aluminum or an aluminum alloy. (2) (Resist Coating Step) Next, as shown in FIG. 5, a resist film 6 is formed by coating a resist on the electrode film 5 by a conventional coating method such as a subin coating method. (at light process) Next, as shown in FIG. 6, a pattern is transferred by irradiating light onto the resist film 6 through a photomask 7 having the same pattern as the electrode fingers 2, 2 to be formed. . ■(Development process) 7th
As shown in the figure, the resist film 6 is developed. In this example, the resist is a positive type, but even if a negative type resist is used, the electrode fingers 2,
It goes without saying that 2 can be formed. (Etching process) As shown in Figure 8, the portions of the electrode film 2 not masked by the resist film 6 were removed by etching, and electrode fingers 2 were formed on the piezoelectric substrate l. After that, the resist film 6... is removed to form an SA as shown in FIG.
Get W device. Conventionally, the etching process has been performed by wet etching using an etching solution containing, for example, a mixture of phosphoric acid: acetic acid and nitric acid in a ratio of 15:3:1. However, in recent years, as the operating frequency of SAW devices has become higher, there has been a desire for finer electrode finger patterns, and processing using dry etching that allows anisotropic etching with less undercut has become necessary. This dry etching is performed, for example, on BCQ3, CQI
, SiC (!4, CCf2., etc.) is turned into plasma in a high frequency atmosphere, and the unmasked portions of the electrode film 5 are selectively etched by the generated highly chemically active Ce radicals and CR ions. It is etched on the surface.
ところが電極指2、2の形成時のエッチングガスとして
塩素系゜ガスを用いると微細エッチングが可能となる一
方で、圧電体基板lや電極指2、2とCl2ラジカルや
Caイオンとが反応して、圧電体基板1および電極指2
、2上に副産物としてL NO塩化物やLTO塩化物等
が生じる。そしてこれら塩素化合物からなる副産物は水
と容易に反応して塩化水素を生成する性質を有するので
、SAWデバイスを大気中に放置すると、大気中の水分
によって塩化水素が圧電体基板lおよび電極指2、2上
に発生する。この塩化水素によって圧電体基板1および
電極指2、2か腐食され、SAWデバイスの寿命および
特性の低下や断線不良が発生するという不都合があった
。However, if a chlorine-based gas is used as the etching gas when forming the electrode fingers 2, 2, fine etching is possible, but the piezoelectric substrate 1 and the electrode fingers 2, 2 react with Cl2 radicals and Ca ions. , piezoelectric substrate 1 and electrode finger 2
, LNO chloride, LTO chloride, etc. are produced as by-products on 2. These by-products made of chlorine compounds have the property of easily reacting with water to generate hydrogen chloride, so if the SAW device is left in the atmosphere, hydrogen chloride will be transferred to the piezoelectric substrate l and the electrode finger 2 by the moisture in the atmosphere. , occurs on 2. This hydrogen chloride corrodes the piezoelectric substrate 1 and the electrode fingers 2, 2, causing disadvantages such as a decrease in the life and characteristics of the SAW device and a disconnection failure.
この発明は、上記課題を解決するためになされたもので
あって、微細な電極指パターンを有し、かつ電極指の腐
食が発生しない耐食性の良好なSAWデバイスに関する
。The present invention was made to solve the above problems, and relates to a SAW device that has a fine electrode finger pattern and has good corrosion resistance without corrosion of the electrode fingers.
[課題を解決するための手段コ
この発明のSAWデバイスは、圧電体基板および電極指
表面に炭素被膜を形成したことを解決手段とした。[Means for Solving the Problems] The SAW device of the present invention has a solution in that a carbon film is formed on the piezoelectric substrate and the surfaces of the electrode fingers.
このようなSAWデバイスにあっては、その表面に炭素
被膜が形成されているので、電極指形成のドライエッチ
ング時に発生した塩素化合物からなる副産物が水と接触
することがなくなる。これにより、圧電体基板や電極指
の腐食を防止することができ、SAWデバイスの寿命お
よび特性を損なうことがない。In such a SAW device, since a carbon film is formed on the surface thereof, by-products consisting of chlorine compounds generated during dry etching for forming electrode fingers are prevented from coming into contact with water. Thereby, corrosion of the piezoelectric substrate and electrode fingers can be prevented, and the life and characteristics of the SAW device will not be impaired.
以下、この発明を詳.シ<説明する。This invention is explained in detail below. <Explain.
第1図は、この発明のSAWデバイスを示したものであ
る。この発明のSAWデバイスは、圧電体基板!上に一
対の電極指2、2を形成し、圧電体基板1と電極指2、
2の表面とに、炭素被膜8を形成してなるものである。FIG. 1 shows a SAW device of the present invention. The SAW device of this invention uses a piezoelectric substrate! A pair of electrode fingers 2, 2 are formed on the piezoelectric substrate 1 and the electrode fingers 2,
A carbon film 8 is formed on the surface of the cylindrical member 2.
この炭素被膜8は、電極指2、2を形成する際のドライ
エッチング工程中に圧電体基板lおよび電極指2、2表
面に生成した塩素化合物からなる副産物が水と反応する
のを防止するためのものである。This carbon film 8 is used to prevent by-products made of chlorine compounds generated on the surfaces of the piezoelectric substrate l and the electrode fingers 2, 2 during the dry etching process when forming the electrode fingers 2, 2 from reacting with water. belongs to.
このような炭素被膜8が形成されたSAWデバイスを製
造するには、通常のホトリソグラフィエ程、すなわち第
4図ないし第8図の工程を経て第3図に示されるように
、圧電体基板1表面に一対の電極指2、2を形成した後
、炭素原子と水素原子とを含有する有機化合物のガスを
高周波雰囲気下で分解せしめ、圧電体基板1表面と一対
の電極指2全面とに炭素被膜8を容易に付着形成するこ
とができる。たとえば、電極指2、2を形成するエッチ
ング工程およびレジスト膜6・・・除去のための酸素系
ガスを用いたプラズマアッシング工程に連続して、前記
有機化合物のガスを供給し、放電させることなどにより
炭素被膜8を析出させることができる。この反応には平
行平板リアクティブイオンエッチング(RIE)装置、
マイクロ波磁場型プラズマエッチング装置等のプラズマ
装置を用いることができる。また炭素被膜8の形成時に
用いられるガスの原料としては、プラズマ放電等によっ
て分解して、炭素被膜を析出させるものであれば特に限
定されないが、CH.、ctHa、CH30H.C!H
50H等の炭化水素類あるいはアルコール類等の有機化
合物のガスを好適に用いることができる。またこれら原
料は、単独あるいは二種以上の組み合わせで供給するほ
か、これら原科ガスをアルゴンガス、窒素ガス等の不活
性ガスや水素ガス等で希釈して用いることができる。こ
のような原料からなるガスは上記エッチング装置内等で
放電させることにより分解し、炭素被膜8が圧電体基板
1および電極指2、2の表面のみならず、これら表面に
発生した塩素化合物からなる副産物上に析出する。そし
てこのようにして形成された炭素披膜8は、いずれも緻
密な構造のものであるので、塩素化合物からなる副産物
が大気中の水分と反応して塩化水素を発生するのを防止
することができ、SAWデバイスの断線不良や寿命およ
び特性の低下を防止することができる。In order to manufacture a SAW device on which such a carbon film 8 is formed, a piezoelectric substrate 1 is formed through a normal photolithography process, that is, the process shown in FIGS. After forming the pair of electrode fingers 2, 2 on the surface, an organic compound gas containing carbon atoms and hydrogen atoms is decomposed in a high frequency atmosphere to form carbon on the surface of the piezoelectric substrate 1 and the entire surface of the pair of electrode fingers 2. The coating 8 can be easily deposited. For example, following the etching process for forming the electrode fingers 2, 2 and the plasma ashing process using an oxygen-based gas for removing the resist film 6, the organic compound gas may be supplied and discharged. The carbon film 8 can be deposited by this method. For this reaction, a parallel plate reactive ion etching (RIE) device,
A plasma device such as a microwave magnetic field type plasma etching device can be used. Further, the raw material for the gas used when forming the carbon film 8 is not particularly limited as long as it can be decomposed by plasma discharge or the like to deposit a carbon film, but CH. , ctHa, CH30H. C! H
Gases of hydrocarbons such as 50H or organic compounds such as alcohols can be suitably used. In addition to supplying these raw materials singly or in combination of two or more, these raw gases can be diluted with an inert gas such as argon gas or nitrogen gas, hydrogen gas, or the like. The gas made of such raw materials is decomposed by discharging it in the etching apparatus, etc., and the carbon film 8 is made up not only of the surfaces of the piezoelectric substrate 1 and the electrode fingers 2, 2, but also of chlorine compounds generated on these surfaces. Precipitates on by-products. Since the carbon membranes 8 formed in this way all have a dense structure, it is possible to prevent by-products made of chlorine compounds from reacting with moisture in the atmosphere and generating hydrogen chloride. This makes it possible to prevent wire breakage and deterioration of the life and characteristics of the SAW device.
またこの炭素被膜8は、リアクティブイオンエッチング
(RIE)やマイクロ波磁場型プラズマエッヂング等の
プラズマ手段によって低温下の作成か可能であるので、
SAWデバイスの特性が低下することもない。Furthermore, this carbon film 8 can be created at low temperatures by plasma means such as reactive ion etching (RIE) or microwave magnetic field type plasma etching.
There is no deterioration in the characteristics of the SAW device.
[実施例コ
表面が平滑でかつ清浄なLNO基板上に、AQ2%Cu
合金をtooo人の厚さで積層して電極膜とした。この
電極膜上にレジストを塗布し、これを露光した後、BC
I23を用いて上記電極膜をドライエッチングしてパタ
ーニングした後、CF4系ガスを用いたスパッタクリー
ニング処理を施して表面を清浄にした。ついでO,系ガ
スを用いたアッシング処理によって上記レジスト膜を除
去して圧電体基板上に電極指を形成した。これに引き続
き、同一反応室内にC*HsOHを供給して放電し、上
記圧電体基板と電極指との表面に炭素被膜を形成して、
この発明のSAWデバイスとシタ。[Example 2] AQ2%Cu was placed on an LNO substrate with a smooth and clean surface.
The alloy was laminated to a thickness of one million people to form an electrode film. After applying a resist on this electrode film and exposing it to light, BC
After dry etching and patterning the electrode film using I23, a sputter cleaning process using CF4 gas was performed to clean the surface. Then, the resist film was removed by ashing using O2-based gas to form electrode fingers on the piezoelectric substrate. Subsequently, C*HsOH is supplied into the same reaction chamber and discharged to form a carbon film on the surfaces of the piezoelectric substrate and the electrode fingers,
The SAW device of this invention and its location.
このようにして得られたSAWデバイスを大気中に1日
放置したが、電極指の腐食は検出されず、SAWデバイ
ス作成時と全く同様の特性を示した。Although the SAW device thus obtained was left in the atmosphere for one day, no corrosion of the electrode fingers was detected, and the SAW device exhibited exactly the same characteristics as the SAW device when it was produced.
このことから圧電体基板と電極指の表面に炭素被膜を形
成すると、SAWデバイスの断線不良や特性の低下を防
止することができ、長寿命とできることが確認できた。From this, it was confirmed that by forming a carbon film on the surfaces of the piezoelectric substrate and the electrode fingers, it is possible to prevent disconnection defects and deterioration of the characteristics of the SAW device, and to extend the life of the SAW device.
[発明の効果]
以上説明したように、この発明のSAWデバイスは、圧
電体基板上に一対の電極指を形成してなるSAWデバイ
スにおいて、上記圧電体基板および電極・指表面に炭素
被膜を形成したものであるので、電極指形成のドライエ
ッチング時に発生する塩素化合物からなる副産物が水と
接触するのを防止することができる。よって電極指を腐
食する塩化水素の生成を防止することができるので、腐
食による電極指の断線不良や特性劣化を防止することが
でき、SAWデバイスの長寿命化が可能となる。[Effects of the Invention] As explained above, the SAW device of the present invention includes a pair of electrode fingers formed on a piezoelectric substrate, in which a carbon film is formed on the piezoelectric substrate and the surfaces of the electrodes and fingers. Therefore, it is possible to prevent by-products consisting of chlorine compounds generated during dry etching for electrode finger formation from coming into contact with water. Therefore, it is possible to prevent the generation of hydrogen chloride that corrodes the electrode fingers, so it is possible to prevent disconnection and characteristic deterioration of the electrode fingers due to corrosion, and it is possible to extend the life of the SAW device.
第1図は、この発明のSAWデバイスの概略断面図、第
2図は従来のSAWデバイスの概略斜視図、第3図は第
2図のSAWデバイスの概略断面図、第4図ないし第8
図は、いずれも従来のSAWデバイスを製造する各工程
を示した概略断面図である。
l・・・圧電体基板、
2・・・電極指、
8・・・炭素被膜。FIG. 1 is a schematic sectional view of the SAW device of the present invention, FIG. 2 is a schematic perspective view of a conventional SAW device, FIG. 3 is a schematic sectional view of the SAW device of FIG. 2, and FIGS.
Each figure is a schematic cross-sectional view showing each process of manufacturing a conventional SAW device. 1... Piezoelectric substrate, 2... Electrode finger, 8... Carbon coating.
Claims (1)
デバイスにおいて、 上記圧電体基板および電極指表面に炭素被膜を形成した
ことを特徴とする表面弾性波デバイス。[Scope of Claims] A surface acoustic wave device comprising a pair of electrode fingers formed on a piezoelectric substrate, characterized in that a carbon film is formed on the surfaces of the piezoelectric substrate and the electrode fingers.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5557389A JPH02234507A (en) | 1989-03-08 | 1989-03-08 | Surface acoustic wave device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5557389A JPH02234507A (en) | 1989-03-08 | 1989-03-08 | Surface acoustic wave device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02234507A true JPH02234507A (en) | 1990-09-17 |
Family
ID=13002466
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5557389A Pending JPH02234507A (en) | 1989-03-08 | 1989-03-08 | Surface acoustic wave device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02234507A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007017303A (en) * | 2005-07-07 | 2007-01-25 | Horiba Ltd | Measuring instrument of number of cells and measuring cartridge of number of cells |
US8302458B2 (en) | 2007-04-20 | 2012-11-06 | Parker-Hannifin Corporation | Portable analytical system for detecting organic chemicals in water |
US9766215B2 (en) | 2011-09-07 | 2017-09-19 | Parker-Hannifin Corporation | Analytical system and method for detecting volatile organic compounds in water |
US10895565B2 (en) | 2015-06-05 | 2021-01-19 | Parker-Hannifin Corporation | Analysis system and method for detecting volatile organic compounds in liquid |
-
1989
- 1989-03-08 JP JP5557389A patent/JPH02234507A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007017303A (en) * | 2005-07-07 | 2007-01-25 | Horiba Ltd | Measuring instrument of number of cells and measuring cartridge of number of cells |
JP4567540B2 (en) * | 2005-07-07 | 2010-10-20 | 株式会社堀場製作所 | Cell count device and cell count cartridge |
US8302458B2 (en) | 2007-04-20 | 2012-11-06 | Parker-Hannifin Corporation | Portable analytical system for detecting organic chemicals in water |
US9766215B2 (en) | 2011-09-07 | 2017-09-19 | Parker-Hannifin Corporation | Analytical system and method for detecting volatile organic compounds in water |
US10161920B2 (en) | 2011-09-07 | 2018-12-25 | Parker-Hannifin Corporation | Analytical system and method for detecting volatile organic compounds in water |
US10895565B2 (en) | 2015-06-05 | 2021-01-19 | Parker-Hannifin Corporation | Analysis system and method for detecting volatile organic compounds in liquid |
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