JPH0223002B2 - - Google Patents

Description

[Detailed description of the invention]

The present invention relates to a sintered resistor whose resistance value changes according to temperature changes. Furthermore, the present invention relates to a sintered resistor formed by uniformly dispersing metal in a semiconductor, and a resistor using palladium. Conventionally, many reports have been made on the relationship between temperature and dielectric constant of specific compositions of ceramics, such as titanic acid salts. Typical examples include barium titanate, calcium titanate,
Examples include lead titanate. Furthermore, the relationship between temperature change and dielectric constant change has been similarly reported and known for barium titanate-barium stannate compositions and barium titanate-barium zirconate compositions. These commonly used barium titanate or similar compounds have been made to exhibit a constant resistance value that corresponds to temperature and have high sensitivity, and are highly sensitive, accurate, and reliable in response to temperature changes. It would be extremely useful if a high resistance element could be obtained by combining it with a sintering method. However, even if titanium hydrochloric acid particles are sintered, they will only exhibit insulating properties, so conventionally, various substances have been added and mixed and sintered to impart temperature resistance change properties. I try to do that. The present invention aims to improve such conventional titanate-based temperature resistance change materials and provide a new temperature resistance change material with excellent sensitivity to temperature changes. It is characterized by mixing titanate with approximately 10 wt% of granular titanium-nickel alloy, and sintering the mixture with titanium-nickel alloy grains interposed between the titanate particles. Further, by using palladium or the like as a sintering catalyst so as to produce a catalytic effect, an even better product can be obtained by sintering. Next, one embodiment of the present invention will be described. Example A 3000 mesh BaTiO ₃ particles 89wt% 1100 mesh TiNi (50:50) particles 11wt% These mixed compositions were thoroughly mixed and uniformly dispersed, and then discharge sintered under pressure at approximately 1300°C. The specific resistance value is 0.06Ωcm at room temperature and 10 ² at 800℃.
It was Ωcm. In the sintered body of Example A, as shown in FIG. 1, it was confirmed that a portion 2 of sintered metal TiNi as shown in the figure was formed in a part of the BaTiO ₃ semiconductor grain 1. Also, the addition ratio of TiNi particles is
The amount is preferably around 10wt%; if it is less than 6wt%, the amount added is too small and the TiNi particles cannot be sufficiently interposed between the BaTiO ₃ particles, and if it is more than 14wt%, the amount of TiNi added between the BaTiO ₃ particles is Since particles tend to connect with each other and exhibit metallic characteristics, good temperature resistance change characteristics cannot be obtained in either case. Example B When forming the fired product of Example A above, in addition to the above two components, palladium was uniformly dispersed and mixed in varying amounts as shown in Table 1 under the same discharge sintering conditions. The results obtained were as shown in the table.

[Table] As shown in Table 1, the amount of palladium added is
At 0.6 wt%, it was almost the same as when no additive was added, but the resistivity value at room temperature clearly decreased when the amount added was further increased from 0.8 to 1.0 wt%. The sensitivity increased accordingly. Also, regarding the resistivity value at 800°C, when the amount of palladium added was increased to 0.8wt% and further to 1.0wt%, the resistivity value significantly increased and the sensitivity improved. In this way, by adding TiNi particles to BaTiO ₃ particles and sintering the mixture, a temperature resistance change material with excellent temperature resistance change characteristics can be obtained, and by adding a small amount of palladium, It was clearly confirmed that the numerical range of the change in resistivity value was extremely wide. This change can be used in a sensor for temperature sensing, measurement or display. Of course, it can be applied to appropriate uses as a temperature resistance variable body. Example C It was found that the following could be used in place of BaTiO ₃ in the above example. SrTiO ₃ , PbTiO ₃ , BiTiO ₃・MnO ₂ Furthermore, at least one compound is arbitrarily selected from the following oxides (1), carbides (2), nitrides (3), or a mixed composition thereof. It was found that it could be used in addition to BaTiO ₃ . (1) Oxides TiO ₂ , TiO ₃ , Bi ₂ O ₃ , SnO ₂ , Fe ₂ O ₃ ,
Fe ₃ O ₄ , ZnO (2) Carbide SiC, B ₄ C, TiC, CrC, Cr ₃ C ₂ , NbC,
TaC, WC, VC (3) Nitride BN, TiN, ZrN, TaN, NbN As already explained in the examples,
TiNi grains added to titanate particles such as BaTiO ₃ and sintered, and those further sintered with a small amount of palladium can form a resistor that responds well to temperature changes. . Utilizing these characteristics, semiconductors can be used both as resistors and temperature sensors, making semiconductors good temperature resistors.

[Brief explanation of drawings]

FIG. 1 is an illustration of sintered particles according to an embodiment of the present invention. 1... ₃ BaTiO grains, 2...TiNi part.

Claims (1)

[Claims] 1 A temperature characterized by mixing granular titanium-nickel alloy with approximately 10 wt% of granular titanate and sintering the mixture with titanium-nickel alloy grains interposed between the titanate particles. resistance change material.