JPH0222572A - Wiring inspecting method for integrated circuit - Google Patents

Wiring inspecting method for integrated circuit

Info

Publication number
JPH0222572A
JPH0222572A JP63172038A JP17203888A JPH0222572A JP H0222572 A JPH0222572 A JP H0222572A JP 63172038 A JP63172038 A JP 63172038A JP 17203888 A JP17203888 A JP 17203888A JP H0222572 A JPH0222572 A JP H0222572A
Authority
JP
Japan
Prior art keywords
wiring layer
liquid crystal
wiring
crystal film
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63172038A
Other languages
Japanese (ja)
Other versions
JPH0581866B2 (en
Inventor
Takahisa Yamaba
隆久 山葉
Takatomo Shichimiya
七宮 敬朋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yamaha Corp
Original Assignee
Yamaha Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yamaha Corp filed Critical Yamaha Corp
Priority to JP63172038A priority Critical patent/JPH0222572A/en
Publication of JPH0222572A publication Critical patent/JPH0222572A/en
Publication of JPH0581866B2 publication Critical patent/JPH0581866B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE:To easily and securely detect a wire breaking point by forming a liquid crystal film on the top surface of an IC chip so that its wiring layer is covered, applying an impulsive voltage to the wiring layer, and observing a repetitive light and dark pattern where the inclination of molecule axes of a liquid crystal material due to electric field effect is reflected. CONSTITUTION:In a 1st step, the liquid crystal film 20 is formed on the top surface of the IC ship 10 while covering the wiring layer 16. In this case, no cover glass is installed and orientation is not performed. Further, a wiring protection film 18 is not removed either. In a 2nd step, the impulsive voltage signal is applied to the wiring layer 16 to form the optically observable repetitive light and dark pattern where the inclination of molecule axes of the liquid crystal material due to the electric field effect is reflected in the liquid crystal film 20 along the wiring layer 16. In a 3rd step, the generation state of the repetitive light and dark pattern is observed optically to detect the wire breaking position of the wiring layer 16.

Description

【発明の詳細な説明】 [産業上の利用分野] この発明は、集積回路(以下ICと称する)の配線検査
法に関し、特に断線個所検出法の改良に関するものであ
る。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a wiring inspection method for integrated circuits (hereinafter referred to as IC), and particularly relates to an improvement in a method for detecting disconnections.

[発明の概要] この発明は、ICチップの上面にその配線層をおおうよ
うに液晶膜を形成すると共に該配線層にパルス状の電圧
信号を印加し、電界効果による液晶物質の分子軸の傾き
を反映した濃淡の祿返しパターンを光学顕微鏡等で観察
することにより断線個所を簡単且つ確実に検出可能とし
たものである。
[Summary of the Invention] This invention forms a liquid crystal film on the upper surface of an IC chip so as to cover its wiring layer, applies a pulse-like voltage signal to the wiring layer, and tilts the molecular axis of the liquid crystal material by an electric field effect. By observing the shading pattern reflecting the shading with an optical microscope, etc., it is possible to easily and reliably detect the disconnection point.

[従来の技術] 従来、LSI (大規模集積回路)等のICの故障を解
析する方法としては、ストロボ走査型電子顕微鏡を用い
るものなどいくつか提案されているが、高価な装置を用
いないで済む簡便さから液晶の複屈折効果を利用して配
線電位状態を可視化する(具体的には配線層のうち高電
位状態にある個所を光学的に観察する)方法が注目され
ている。
[Prior Art] Several methods have been proposed to analyze failures in ICs such as LSIs (Large-Scale Integrated Circuits), such as using a strobe scanning electron microscope. Because of its simplicity, a method that uses the birefringence effect of liquid crystal to visualize the wiring potential state (specifically, optically observing parts of the wiring layer that are in a high potential state) is attracting attention.

この可視化する方法にあっては、ICチップの上面に液
晶を介してカバーガラスを設け、配向処理により液晶を
垂直配向させる。そして、配線層にパルス電圧を印加し
てその電界効果により液晶に複屈折を起こさせるが、こ
のときの印加電圧をICの通常使用電圧より高くするか
又は配線層をおおう保護膜を予め薄くすべくエッチして
おかなければ液晶物質の分子軸を傾けることができず、
可視化できなかった。そこで、保護膜エツチングを要せ
ず、しかもICの通常使用電圧以下の電圧で可視化する
方法として、約10[Hzlと約1 [KHzlとの2
つのパルス電圧を重畳して印加することが提案されてい
る(例えば第15回日科技連信頼性・保全性シンポジウ
ム資料、昭和60年5月、第243〜246頁参照)。
In this visualization method, a cover glass is provided on the top surface of the IC chip with the liquid crystal interposed therebetween, and the liquid crystal is vertically aligned by alignment treatment. Then, a pulse voltage is applied to the wiring layer to cause birefringence in the liquid crystal due to the electric field effect, but the applied voltage at this time must be higher than the voltage normally used by the IC, or the protective film covering the wiring layer must be made thinner in advance. Unless it is etched as much as possible, the molecular axis of the liquid crystal material cannot be tilted.
I couldn't visualize it. Therefore, as a method that does not require protective film etching and can be visualized at a voltage lower than the normal operating voltage of IC, a
It has been proposed to apply two pulse voltages in a superimposed manner (see, for example, the 15th Japan Society of Science and Technology Reliability and Maintainability Symposium Materials, May 1985, pp. 243-246).

[発明が解決しようとする課題] 上記した従来技術によると、パルス電圧の重畳的印加に
より保護膜エツチングなしで低電圧化を達成したとして
も、カバーガラス設置処理及び配向処理は不可欠であり
、特に配向処理は1時間程度の加熱処理を要する。この
ため、解析試料の作製に相当の時間と労力が必要であっ
て、簡単且つ迅速に故障解析を行なうのが困難であった
[Problems to be Solved by the Invention] According to the above-mentioned conventional technology, even if voltage reduction is achieved without protective film etching by applying pulsed voltage in a superimposed manner, cover glass installation processing and orientation processing are indispensable. The orientation treatment requires heat treatment for about one hour. For this reason, a considerable amount of time and effort is required to prepare analysis samples, making it difficult to perform failure analysis simply and quickly.

この発明の目的は、簡単且つ迅速に故障解析を行なえる
と共に安全且つ確実に断線個所を検出することのできる
新規なIC配線検査法を提供することにある。
An object of the present invention is to provide a new IC wiring inspection method that can perform failure analysis simply and quickly, and can safely and reliably detect disconnections.

[課題を解決するための手段] この発明によるIC配線検査法は、次の第1〜第3のス
テップを含むものである。
[Means for Solving the Problems] The IC wiring inspection method according to the present invention includes the following first to third steps.

すなわち、第1のステップでは、ICチップの上面にそ
の配線層をおおうように液晶膜を形成する。この場合、
カバーガラスは設置せず、配向処理も行なわない、また
、配線保護膜も除去しない。
That is, in the first step, a liquid crystal film is formed on the upper surface of the IC chip so as to cover the wiring layer. in this case,
No cover glass is installed, no orientation treatment is performed, and no wiring protection film is removed.

第2のステップでは、配&1jlJiiiiにパルス状
の電圧信号を印加することにより電界効果による液晶物
質の分子軸の傾きを反映した光学的に観察可能な濃淡の
繰返しパターンを配線層に沿って液晶膜に生じさせる。
In the second step, by applying a pulsed voltage signal to the wiring layer, an optically observable repeating pattern of light and shade that reflects the inclination of the molecular axis of the liquid crystal material due to the electric field effect is created in the liquid crystal film along the wiring layer. cause to occur.

第3のステップでは、濃淡の繰返しパターンの生成状態
を光学的に観察することにより配線層の断線個所を検出
する。
In the third step, a disconnection point in the wiring layer is detected by optically observing the generated state of the repetitive pattern of shading.

[作 用] この発明の方法によると、濃淡の繰返しパターンは、電
界効果によって生ずるものであるから、配線層のうちで
も断線によって電圧が印加されない部分については濃淡
の繰返しパターンが生じない。従って、濃淡の繰返しパ
ターンの生成状態を光学顕微鏡等を用いて光学的に観察
することにより配線層の途中等において濃淡の繰返しパ
ターンが途切れているところは断線個所として確実に検
出することができる。
[Function] According to the method of the present invention, the repeating pattern of shading is generated by the electric field effect, so that the repeating pattern of shading does not occur in the portions of the wiring layer where no voltage is applied due to a disconnection. Therefore, by optically observing the generation state of the repeating pattern of shading using an optical microscope or the like, it is possible to reliably detect a break in the repeating pattern of shading, such as in the middle of a wiring layer, as a disconnection point.

また、この発明は、電圧印加状態にある配線層そのもの
を光学的に観察するのではなく、電圧印加に伴って生ず
る濃淡の繰返しパターンを光学的に観察するようにした
ので、液晶膜が初期的にどのような配向状態にあっても
よく、カバーガラス設置処理及び配向処理は不要である
。その上、濃淡の繰返しパターンは、配線保護膜を付け
たままでICの通常使用電圧(例えば5[V])以下で
も生ずるので、保護膜エツチング処理が不要であり、し
かも高電圧を用いた場合のようにIC機能を損うおそれ
もない。
In addition, this invention does not optically observe the wiring layer itself under voltage application, but optically observes the repetitive pattern of shading that occurs with voltage application. It may be in any orientation state, and cover glass installation treatment and orientation treatment are not required. Furthermore, the repeating pattern of light and shade occurs even when the wiring protection film is attached and the voltage is lower than the IC's normal usage voltage (for example, 5 [V]), so there is no need for a protection film etching process, and it is difficult to use when high voltages are used. There is no risk of damaging the IC function.

[実施例] 第1図は、この発明のIC配線検査法の一実施例を示す
ものである。
[Embodiment] FIG. 1 shows an embodiment of the IC wiring inspection method of the present invention.

ICの故障解析を行なう場合を大別すると。The cases in which IC failure analysis is performed can be broadly classified.

ICチップをパッケージ−組込む前に例えばウェハ状態
で行なう第1の場合と、ICチップをパッケージに組込
んだ後行なう@2の場合とがある。
There is a first case in which the process is carried out in a wafer state, for example, before the IC chip is assembled into a package, and a second case in which the process is carried out after the IC chip is assembled in the package.

第1の場合にあっては、ICチップが露出しているので
、チップ露出処理は必要ないが、第2の場合にあっては
、パッケージを薬品(化学的)あるいは機械的に開封し
てICチップを露出させる。このとき、ポンディングワ
イヤにダメージを与えない様に注意する。
In the first case, the IC chip is exposed, so there is no need for chip exposure treatment, but in the second case, the package is chemically or mechanically opened and the IC chip is exposed. Expose the chip. At this time, be careful not to damage the bonding wire.

第1図に示すように、ICチップ10は、シリコン等の
半導体基板の表面に複数の回路素子を形成すると共に、
これらの回路素子を絶縁膜14上に形成された配線層1
6で接続して所望の回路機能を得るようになっている0
通常、配線層18は、PSG(リンケイ酸ガラス)等の
保護膜1日でおおわれており、配線層16の一端及び他
端は、ポンディングパッドとしての接続層C1及びC2
により保護膜18の上面に導出されている。
As shown in FIG. 1, the IC chip 10 has a plurality of circuit elements formed on the surface of a semiconductor substrate such as silicon, and
These circuit elements are connected to a wiring layer 1 formed on an insulating film 14.
6 to obtain the desired circuit function.
Usually, the wiring layer 18 is covered with a protective film such as PSG (phosphosilicate glass), and one end and the other end of the wiring layer 16 are covered with connection layers C1 and C2 as bonding pads.
is led out to the upper surface of the protective film 18.

解析対象となるICチップlOを用意した後、このチッ
プを電気的に動作可能な状態とする。具体的には、上記
した第1の平台は、接続層C1及びC2に金属探針(プ
ローブ)を立てて外部から電圧信号を印加できるように
し、上記した第2の場合は、パッケージの外部端子(リ
ード)に電圧信号を印加できるようにする。第1図の端
子TI及びT2は、プローブ又はリードに相当する。
After preparing the IC chip IO to be analyzed, this chip is made electrically operable. Specifically, in the above-mentioned first flat stand, metal probes are set up on the connection layers C1 and C2 so that a voltage signal can be applied from the outside, and in the above-mentioned second case, the external terminals of the package (leads) so that a voltage signal can be applied to them. Terminals TI and T2 in FIG. 1 correspond to probes or leads.

次に、チップ上面に一例としてネマティック液晶MBB
Aを塗布した後余分な液晶を除去してチップ上に極めて
薄い(約3[ル■1以下)液晶膜20を形成する。そし
て、ICチップ10を、液晶膜20の形成面が上になる
ようにして光学顕微鏡30の下に1く。
Next, as an example, a nematic liquid crystal MBB is placed on the top surface of the chip.
After coating A, excess liquid crystal is removed to form an extremely thin (approximately 3 mm or less) liquid crystal film 20 on the chip. Then, the IC chip 10 is placed under the optical microscope 30 with the surface on which the liquid crystal film 20 is formed facing upward.

光学顕微鏡30にあっては、対物レンズ32と接眼レン
ズ34との間に光源36からの光を観察対象に向けるよ
うにハーフミラ−38が設けられると共に。
In the optical microscope 30, a half mirror 38 is provided between the objective lens 32 and the eyepiece lens 34 so as to direct the light from the light source 36 toward the object to be observed.

光源36とハーフミラ−38との間及び接眼レンズ34
とハーフミラ−38との間には各々の偏光面が互いに直
角をなすようにして第1及び第2の偏光子40及び42
がそれぞれ配置されている。
Between the light source 36 and the half mirror 38 and the eyepiece 34
First and second polarizers 40 and 42 are disposed between the half mirror 38 and the half mirror 38 so that their polarization planes are perpendicular to each other.
are placed respectively.

次に、端子T!及びT2に一例としてピーク電圧が+5
 [V] 、周波数が5 [Hzlの方形波パルス状電
圧信号Vaを印加する。そして、この電圧印加状態にお
いて光学顕微鏡30を介して肉眼でICチップの上面を
観察する。
Next, terminal T! And T2 has a peak voltage of +5 as an example.
[V], a square wave pulsed voltage signal Va with a frequency of 5 [Hzl] is applied. Then, in this voltage applied state, the top surface of the IC chip is observed with the naked eye through the optical microscope 30.

いま、配線層16がXの個所で断線しているものとする
と、Xより左側の部分(A)では、顕微鏡30からの光
Pが矢印a方向の偏光面をもってチップ上面に入射し、
その反射光Qが矢印す方向の偏光面をもって顕微鏡30
に入射する。このとき、配線層16のXより左側の部分
には断線により電圧が印加されていないので、第2図に
^に示すように光学的に何等変化が認められない。
Now, assuming that the wiring layer 16 is broken at the point X, in the part (A) to the left of X, the light P from the microscope 30 enters the top surface of the chip with the plane of polarization in the direction of arrow a.
The microscope 30 holds the polarization plane of the reflected light Q in the direction of the arrow.
incident on . At this time, since no voltage is applied to the portion of the wiring layer 16 to the left of X due to the disconnection, no optical change is observed as shown in ^ in FIG.

一方、Xより右側の部分(B)では、配線周辺の電界の
変化によって液晶物質の分子軸が傾けられるために反射
光Qの偏光面の方向がbからb′のように変化し、この
結果として第2図KBに示すようにXから右側の配線層
部分に沿って濃淡の繰返しパターンが見られる。
On the other hand, in the part (B) on the right side of X, the molecular axis of the liquid crystal substance is tilted due to the change in the electric field around the wiring, so the direction of the polarization plane of the reflected light Q changes from b to b'. As shown in FIG. 2KB, a repeated pattern of light and shade can be seen along the wiring layer portion on the right side from X.

第2図のKB及びに^におけるパターンの有無は顕微鏡
30を介して明瞭に観察されるので、配線層16がXの
個所で断線していることを容易に検出できる。なお、配
線層18が断線なしの正常なものであれば第3図に示す
ような濃淡の繰返しパターンが見られる。
Since the presence or absence of the pattern at KB and ^ in FIG. 2 can be clearly observed through the microscope 30, it is easy to detect that the wiring layer 16 is broken at the location X. Note that if the wiring layer 18 is normal with no disconnections, a repeating pattern of light and shade as shown in FIG. 3 will be seen.

上記実施例では、顕微鏡30を介して肉眼で観察したが
、写真にとって観察してもよい、また、電圧信号Vaの
電圧値及び周波数は、濃淡の繰返しパターンが光学的に
観察可能に現われる範囲で適宜設定すればよく、上記し
た例示値に限定されるものではない。
In the above embodiment, the observation was made with the naked eye through the microscope 30, but it may also be observed by taking a photograph.The voltage value and frequency of the voltage signal Va should be set within a range in which a repeating pattern of light and shade appears optically observable. It may be set as appropriate and is not limited to the above-mentioned example values.

[発明の効果] 以上のように、この発明によれば、電圧印加に伴って生
ずる濃淡の繰返しパターンを光学的に観察するようにし
たので、配線保護膜エツチング処理、カバーガラス設置
処理、配向処理等の1面倒な準備処理が不要であり、簡
単且つ迅速にICの故障解析を行うことができ、しかも
ICの通常使用電圧以下の電圧で安全且つ確実に断線個
所を検出できるなど優れた効果が得られるものである。
[Effects of the Invention] As described above, according to the present invention, the repeating pattern of shading that occurs with the application of voltage is optically observed, so that it is possible to perform the wiring protection film etching process, cover glass installation process, and alignment process. It has excellent effects, such as eliminating the need for troublesome preparation processes such as That's what you get.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、この発明のIC配線検査法の一実施例を説明
するための配置図、 第2図及び第3図は、それぞれ断線ありの配線層及び正
常な配線層について濃淡の繰返しパターンを示す上面図
である。 lO・・・ICチップ、12・・・半導体基板、14・
・・絶縁膜、IB・・・配線層、1B・・・保護膜、2
0・・・液晶膜、30・・・光学顕微鏡。
FIG. 1 is a layout diagram for explaining one embodiment of the IC wiring inspection method of the present invention, and FIGS. 2 and 3 show repeated patterns of shading for a wiring layer with a disconnection and a normal wiring layer, respectively. FIG. lO...IC chip, 12...semiconductor substrate, 14.
...Insulating film, IB...Wiring layer, 1B...Protective film, 2
0...Liquid crystal film, 30...Optical microscope.

Claims (1)

【特許請求の範囲】 (a)集積回路チップの上面にその配線層をおおうよう
に液晶膜を形成するステップと、 (b)前記配線層にパルス状の電圧信号を印加すること
により電界効果による液晶物質の分子軸の傾きを反映し
た光学的に観察可能な濃淡の繰返しパターンを前記配線
層に沿って前記液晶膜に生じさせるステップと、 (c)前記濃淡の繰返しパターンの生成状態を光学的に
観察することにより前記配線層の断線個所を検出するス
テップと を含む集積回路の配線検査法。
[Claims] (a) forming a liquid crystal film on the upper surface of an integrated circuit chip so as to cover the wiring layer; and (b) applying a pulsed voltage signal to the wiring layer to generate a liquid crystal film by applying an electric field effect. (c) producing an optically observable repeating pattern of light and shade in the liquid crystal film along the wiring layer, reflecting the inclination of the molecular axis of the liquid crystal substance; Detecting a disconnection point in the wiring layer by observing the wiring of the integrated circuit.
JP63172038A 1988-07-11 1988-07-11 Wiring inspecting method for integrated circuit Granted JPH0222572A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63172038A JPH0222572A (en) 1988-07-11 1988-07-11 Wiring inspecting method for integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63172038A JPH0222572A (en) 1988-07-11 1988-07-11 Wiring inspecting method for integrated circuit

Publications (2)

Publication Number Publication Date
JPH0222572A true JPH0222572A (en) 1990-01-25
JPH0581866B2 JPH0581866B2 (en) 1993-11-16

Family

ID=15934376

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63172038A Granted JPH0222572A (en) 1988-07-11 1988-07-11 Wiring inspecting method for integrated circuit

Country Status (1)

Country Link
JP (1) JPH0222572A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6980010B2 (en) * 2003-01-21 2005-12-27 Riken Method and apparatus for inspecting wire breaking of integrated circuit
JP2006086126A (en) * 2004-09-15 2006-03-30 Phoenix Contact Gmbh & Co Kg Electric connecting terminal or joint terminal
WO2023272704A1 (en) * 2021-07-01 2023-01-05 重庆康佳光电技术研究院有限公司 Detection membrane and manufacturing method, chip bonding detection method and device, and classification method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6980010B2 (en) * 2003-01-21 2005-12-27 Riken Method and apparatus for inspecting wire breaking of integrated circuit
JP2006086126A (en) * 2004-09-15 2006-03-30 Phoenix Contact Gmbh & Co Kg Electric connecting terminal or joint terminal
WO2023272704A1 (en) * 2021-07-01 2023-01-05 重庆康佳光电技术研究院有限公司 Detection membrane and manufacturing method, chip bonding detection method and device, and classification method

Also Published As

Publication number Publication date
JPH0581866B2 (en) 1993-11-16

Similar Documents

Publication Publication Date Title
US5175504A (en) Method and apparatus for automatically inspecting and repairing a simple matrix circuit panel
US4355278A (en) Method for testing and analyzing surface acoustic wave interdigital transducers
JPH03244141A (en) Observation device for voltage at large number of position on surface of panel
JPH04226046A (en) Bonding method of electronic chip
JPH1164443A (en) Support for inspecting semiconductor device having rear surface open part
US5615039A (en) Electro-optical element and its manufacturing method
JPH0222572A (en) Wiring inspecting method for integrated circuit
CN109991769A (en) The inspection method of display device, the manufacturing method of display device and display device
US6128424A (en) Dual purpose input electrode structure for MIOCs (multi-function integrated optics chips)
US6559670B1 (en) Backside liquid crystal analysis technique for flip-chip packages
JPH03203343A (en) Inspecting method
US6500699B1 (en) Test fixture for future integration
JP3261904B2 (en) Semiconductor device
RU2272335C2 (en) Method for testing and checking electronic components
West A simple technique for analysis of ESD failures of dynamic RAMs using liquid crystals
JPS5921169B2 (en) Failure analysis method for semiconductor devices
Salvo An improved approach to locating pinhole defects in MOS and bipolar integrated circuits using liquid crystals
Ebel et al. Failure analysis of oxide defects
US20050136563A1 (en) Backside failure analysis of integrated circuits
JPS5931981B2 (en) Failure analysis method for semiconductor devices
US6674153B2 (en) Semiconductor device utilizing pad to pad wire interconnection for improving detection of failed region on the device
Caseria et al. Selective Mechanical Backside Grinding of CSP-BGA and SOIC-CAV Devices in Preparation for Backside Failure Analysis
TWI236724B (en) Method of wafer defect monitoring
JP3275698B2 (en) Manufacturing method of semiconductor acceleration sensor
JPS629260A (en) Sensor

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees