JPH0222549B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a Hall element having a large internal resistance value and suitable for constant voltage driving.

Generally, intermetallic compounds such as InSb, or Si,
The Hall element made of Ge etc. is as shown in Figure 1.
Input electrodes 2, 2 are provided at both ends of a rectangular magnetically sensitive section 1, and output electrodes 3, 3 are provided at both side edges of the magnetically sensitive section 1. Here, if the specific resistance of the Hall element (magnetically sensitive part) is ρ, the thickness is d, the length is l, and the width is W, then the internal resistance value R of the Hall element is R = ρ・l/w・It is expressed as 1/d...(1). Now, assuming that ρ and d of the Hall element are constant (it is difficult to reduce the value of the thickness d in a bulk element due to its structure), the internal resistance value R of the Hall element is as clear from equation (1). , determined by the shape ratio l/W.

In conventional Hall elements, the basic shape is the linear Hall element shown in Fig. 1, and in consideration of bulk efficiency (effective use of bulk when manufacturing the Hall element), etc., the shape shown in the figure is The magnetically sensitive parts of the Hall elements are arranged diagonally on a rectangular substrate. However, even with such a configuration, it was not possible to obtain good bulk efficiency.

Further, considering the shape effect of the Hall element, in the conventional Hall element, the value of l/W, which substantially determines the internal resistance value of the element, is set to 2 to 4. For this reason, the Hall element using InSb has a low internal resistance value of about 10 to several tens of ohms, making it difficult to drive at a constant voltage. For this reason, the Hall element has been used by driving it with a constant current or by inserting a dropper resistor, but this has been practically inconvenient in terms of characteristics and cost.

The present invention has been made in view of the above-mentioned matters, and the shape of the magnetically sensitive part of the Hall element is formed into a non-linear shape such as a zigzag shape, and the bulk efficiency is maximized to reduce the internal resistance value of the Hall element. The present invention provides a Hall element suitable for driving at a large constant voltage.

An embodiment of the present invention will be described in detail below with reference to the drawings. In FIG. 2, the Hall element H of the present invention
consists of a magnetic sensing part 10 made of InSb, Si, Ge, etc., and formed in a meandering, non-linear shape, and input electrodes 11 provided at both ends 10A and 10B of the magnetic sensing part 10, respectively. 11, and output electrodes 12, 12 provided on both side edges of the magnetic sensing part 10 at approximately the center position.
It is composed of.

In the Hall element with such a configuration, the magnetic sensing part 1
Despite the addition of bending resistance due to the generation of 0 in a non-linear shape such as a zigzag fold, the Hall effect occurs in the entire magnetically sensitive part, and the shape ratio l/W can be improved without reducing the bulk efficiency. The value can be greater than 10.

This increases the internal resistance value of the Hall element H. For example, when InSb is used, conventionally,
Although the internal resistance value was 10 to several tens of ohms, in the present invention, a value of about 100 to 1000 ohms can be obtained.
As a result, the Hall element H can be driven by being directly coupled to a constant voltage source used in the circuit device. In this case, the temperature dependence of the Hall element is improved, and the Hall output voltage can be extracted as a function of the applied magnetic flux, regardless of variations in the thickness of the magnetically sensitive part, allowing good control of the output characteristics. It is.

In one embodiment of the present invention, the magnetic sensing part of the Hall element is formed in a meandering, non-linear shape. It may be formed in a straight line, and the shape of the magnetic sensing part is not limited to the embodiment as long as it is non-linear.

As described above, according to the Hall element of the present invention, the magnetically sensitive portion has a non-linear shape,
Since the shape ratio l/W of the magnetic sensing part can be set to an extremely large value while maintaining good bulk efficiency, the internal resistance value of the Hall element determined by the value of the shape ratio l/W can be substantially reduced. It can be made larger. As a result, the Hall element can be directly coupled and driven with an existing constant voltage source provided in the circuit device. Therefore, the circuit is simplified and cost effective.

[Brief explanation of drawings]

FIG. 1 is a general structural diagram of a conventionally known Hall element, and FIG. 2 is a structural diagram of a Hall element in an embodiment of the present invention. H...Hall element, 10...Magnetic sensitive part, 11,1
1... Input electrode, 12, 12... Output electrode.

Claims (1)

[Claims] 1. A Hall element characterized in that a magnetic sensing part is formed in a non-linear shape with a ratio l/W of length l width W of 10 or more, and an output electrode is provided at a substantially central position of the magnetic sensing part. .