JPH02219226A - Plasma equipment - Google Patents

Abstract

PURPOSE:To eliminate water content in an atmosphere at the time of processing such as etching and film formation, and perform excellent treatment for a sample by a method wherein, before the sample is carried in a sample chamber, the sample temperature is raised at a specified value in a vacuum or non- oxidizing atmosphere, and water content contained in the sample is vaporized. CONSTITUTION:A stage 9 includes a heater 11 and a thermocouple 12 connected with a temperature controlling apparatue 10: the temperature of the stage 2 is measured by the thermocouple 12, and input to the temperature controlling apparatus 10; which sets the temperature of the stage 9. It is kept at the set temperature. By raising, in this manner, the temperature of the stage 9, the temperature of a sample S is raised and the water content therein is vaporized. After that, the sample S' is carried in a sample chamber 3 set at a required degree of vacuum, and subjected to etching treatment by projecting plasma. Thereby water content is eliminated from the atmosphere in the sample chamber 3 under processing, and etching is excellently performed.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a plasma device used as an etching device, a CVO device, or the like.

[Conventional technology]

The method of generating plasma by electron cyclotron resonance excitation can generate highly active plasma at low gas pressure.
It has the advantage of being able to select a wide range of ion energies, producing a large ion current, and having excellent ion flow directionality and uniformity. Development is underway.

By the way, plasma is generated using the above-mentioned plasma generation method, and 8! Alternatively, when etching one alloy, there is a problem that etching does not proceed due to the influence of moisture and oxygen in the etching atmosphere. In addition, by CVD method, A
l1. Alternatively, when forming a ^1 alloy film, there is a problem that the film is likely to peel off after film formation due to the above-mentioned effects, resulting in poor quality of the finished product.

For this reason, the sample chamber of the plasma device is taken in and taken out without opening it to the atmosphere, and the plasma device is equipped with a load-lock chamber that constantly maintains a vacuum inside the sample chamber! Or Af
Processes such as etching and film formation of the fi alloy are being carried out.

FIG. 5 is a schematic vertical cross-sectional view of a conventional plasma device that utilizes electron cyclotron resonance excitation using microwaves, configured as an etching device equipped with a load rotor chamber, and 31 in the figure indicates the plasma generation chamber. .

The plasma generation chamber 31 has a hollow cylindrical shape with a double-walled peripheral wall and a cooling water circulation chamber 31a, and is formed to form a cavity resonator for microwaves. A microwave inlet 3Lc closed by a glass plate 31b is provided, and a plasma extraction window 31 is provided in the center of the lower wall at a position facing the microwave inlet 31c.
It is equipped with d. One end of the waveguide 32 is connected to the microwave inlet 31c, and a plasma extraction window 31d is connected to the microwave inlet 31c.
A sample chamber 33 is arranged as desired in this, and furthermore, a plasma generation chamber 31 and a waveguide 32 connected thereto are arranged around the sample chamber 33.
An excitation coil 34 is disposed around one end of the coil.

The other end of the waveguide 32 is connected to a high-frequency oscillator (not shown), and the excitation coil 34 is connected to a DC power source (not shown).
By introducing microwaves into the sample chamber 31, a magnetic field is formed so that plasma can be generated, and a diverging magnetic field whose magnetic flux density decreases toward the sample chamber 33 side is formed. The plasma was transferred to the sample chamber 33.
There were problems in that the progress of etching was delayed due to the influence of moisture contained within the film, and the film was likely to peel off after formation.

The present invention has been made to solve this problem, and its purpose is to raise the temperature of the sample to a predetermined temperature in a vacuum or non-oxidizing atmosphere before transporting the sample into the sample chamber. The moisture contained in the sample is evaporated, and 8! Another object of the present invention is to provide a plasma apparatus that can satisfactorily perform etching, film formation, etc. of No. 81 alloy.

[Means to solve the problem]

The plasma apparatus according to the present invention is a plasma apparatus having a sample chamber in which a sample is processed using plasma generated by electron cyclotron resonance excitation, in which the sample is heated to a non-oxidizing state before being carried into the sample chamber. The present invention is characterized in that a heating chamber is provided to raise the temperature to a predetermined value in the atmosphere.

[Effect]

In the plasma apparatus of the present invention, a vacuum or non-oxidizing atmosphere is created before the sample is introduced into the sample chamber.

The sample chamber 33 has an exhaust port 33a connected to an exhaust device (not shown) in the bottom wall facing the plasma extraction window 31d. A stand 37 is provided, and A7!
Or, sample S of ^i alloy is arranged. Also, sample chamber 3
In one example of No. 3, a gas supply pipe 33g is arranged.

Furthermore, a load rotor chamber 38 is provided in communication with the sample chamber 33 on the side opposite to the side on which the gas supply pipe 33g of the sample chamber 33 is arranged. The load-lock chamber 38 is a vacuum chamber whose purpose is to take in and take out a sample without opening the sample chamber 33 to the atmosphere, and the sample S' is stored inside the load-lock chamber 38 before being transported to the sample chamber 33. It is stored.

[Problem to be solved by the invention]

However, even when processing such as etching film formation of ^l or Le gold alloy is performed using a plasma apparatus equipped with a load rotor chamber as described above, A! The sample is heated to a predetermined temperature on the wafer surface in an atmosphere to evaporate moisture contained in the sample. This removes moisture in the atmosphere when the sample is transported to the sample chamber and subjected to processing such as etching and film formation, allowing the sample to be processed satisfactorily.

〔Example〕

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention configured as an etching apparatus will be specifically described below with reference to the drawings.

FIG. 1 is a schematic vertical sectional view of a plasma device according to the present invention, and 1 in the figure indicates a plasma generation chamber.

The plasma generation chamber 1 has a hollow cylindrical shape with a double wall structure and a cooling water flow chamber 1a, and is formed to form a cavity resonator for microwaves. It is provided with a microwave inlet 1c closed by a glass plate 1b, and a plasma extraction window 1d at a position facing the microwave inlet 1c in the center of the lower wall. One end of a waveguide 2 is connected to the microwave introduction port 1c, and a sample chamber 3 is arranged in the plasma extraction window 1d as desired, and furthermore, a plasma generation chamber 1 and a plasma generation chamber connected thereto are arranged in the plasma extraction window 1d. An excitation coil 4 is disposed around one end of the waveguide 2 .

The other end of the waveguide 2 is connected to a high frequency oscillator (not shown), and the excitation coil 4 is connected to a DC power source (not shown). At the same time, a diverging magnetic field is formed in which the magnetic flux density decreases toward the sample chamber 3 side, and the plasma generated in the plasma generation chamber 1 by this diverging magnetic field is projected into the sample chamber 3. It's supposed to be forced.

The sample chamber 3 has an exhaust port 3a connected to an exhaust device (not shown) in the bottom wall facing the plasma extraction window 1d. A table 7 is disposed on the sample table 7, facing the plasma extraction window 1d. An alloy sample S is provided.

Further, an example of the sample chamber 3 is provided with a gas supply pipe 3g.

Figures 2 and 3 show the plasma apparatus of the present invention in which the inside of the load lock chamber 8 is set to the required degree of vacuum, and the temperature of the stage 9 is maintained at 20°C in Figure 2 and 120°C in Figure 3. This is a graph obtained by plasma spectroscopy to detect the progress of etching when etching the ^1 alloy.The vertical axis is A1. The CQ emission intensity and the horizontal axis indicate the etching time. As is clear from Fig. 2, when the stage 9 in the load lock chamber 8 was held at 20°C and the sample temperature was not raised, A1
．． Since etching of the alloy does not proceed, no change is observed in the emission intensity of 80H.

On the other hand, stage 9 was held at 120°C and the sample was
When the temperature is raised to 00 to 120 DEG C. (FIG. 3), a change in the emission intensity of Al2Cj2 is observed immediately after the start of etching, indicating that etching is well performed. Note that the heating temperature of the sample is preferably set to a high temperature within a range that the resist of the sample can withstand.

FIG. 4 is a schematic longitudinal cross-sectional view showing another embodiment of the plasma apparatus according to the present invention, in which the sample chamber 3, the row, and the side opposite to the side where the gas supply pipe 3g of the sample chamber 3 is arranged. , a load lock chamber 8 is provided in communication with the sample chamber 3.

The load rotor chamber 8 is a vacuum chamber for the purpose of loading and unloading samples without opening the sample chamber 3 to the atmosphere, and a stage 9 disposed inside the chamber 8 is a vacuum chamber for loading and unloading samples without opening the sample chamber 3 to the atmosphere. sample S' is placed thereon.

Further, the stage 9 includes a heater 11 and a thermocouple 12 connected to a temperature control device 10. The temperature of stage 9 is measured with thermocouple 12, and temperature control bag? It is input to tFto. In response to this, the temperature control device 10 sets the temperature of the stage 9, and the stage 9 is maintained at this set temperature. By raising the temperature of the stage 9 in this manner, the temperature of the sample S is raised and the moisture in the sample S' evaporates. Thereafter, the sample S' is transported to the sample chamber 3 set at a required degree of vacuum, and etched by plasma projection as described above. As a result, moisture is removed from the atmosphere in the sample chamber 3 during processing, and etching is performed satisfactorily.

It has a structure in which a heating chamber 13 is provided between the lock chamber 8 and the lock chamber 8. The heating chamber 13 is a vacuum chamber that includes a stage 9 that incorporates a heater 11 and a thermocouple 12 connected to a temperature control device 11 , and the sample S' is placed in a cassette 4 arranged in a load lock chamber 8 . The sample S' is then transferred onto the stage 9 in the heating chamber 13, where the temperature is raised in the same manner as described above, and the moisture in the sample S' evaporates.

Thereafter, the sample S' is etched in the same manner as described above, and good etching progress is obtained.

The other configurations and functions of the apparatus of the present invention shown in FIG. 4 are the same as those of the embodiment shown in FIG. 1, and corresponding members are given the same numbers and their explanations will be omitted.

Further, in this embodiment, a case has been described in which the present invention is configured as an etching apparatus, but the present invention can be similarly implemented as a film forming apparatus using a CVO method.

Even in such an embodiment, water is removed from the atmosphere in the sample chamber during film formation by raising the temperature of the sample in vacuum to evaporate water in the sample before film formation, as described above.
Deterioration of product quality due to peeling after Q Ill formation is prevented.

Furthermore, in the present invention, the temperature of the sample is raised in the front chamber of the sample chamber in the plasma apparatus, that is, the load lock chamber or the warming chamber, and then the sample is subjected to processing such as etching and film formation. Etching, film formation, etc. may be carried out outside the plasma device in a vacuum or in a non-oxidizing atmosphere, and after the sample is transferred to the sample chamber of the plasma device, the required degree of vacuum is set inside the plasma device. . In this case, it is preferable to raise the temperature of the sample in a non-oxidizing atmosphere such as ^r+L or a mixed gas thereof, but when implementing the present invention in a plasma apparatus, it is preferable to perform the temperature raising treatment in a vacuum atmosphere.

〔Effect of the invention〕

As detailed above, in the plasma device of the present invention,
Before carrying the sample into the sample chamber, the sample is heated to a predetermined temperature in a vacuum or in a non-oxidizing atmosphere to evaporate water contained in the sample, and then subjected to treatments such as etching and film formation. This prevents moisture from forming in the atmosphere inside the sample chamber during processing, and AI! Or the etching of the ^1 alloy progresses well. Moreover, the ^2 film or ^ after film formation has excellent effects such as preventing peeling of the alloy film.

[Brief Description of the Drawings] Fig. 1 is a schematic vertical cross-sectional view of the apparatus of the present invention, and Fig. 2 shows the progress of etching when etching is performed without raising the temperature of the sample as a comparison with an example of the present invention. FIG. 3 is a graph showing the progress of etching when etching according to the present invention is performed, FIG. 4 is a schematic longitudinal sectional view showing another embodiment of the apparatus of the present invention, and FIG. 5 is a graph showing the progress of etching when etching according to the present invention is performed. FIG. 2 is a schematic vertical cross-sectional view showing the device. 1... Plasma generation chamber 8... Load rotor chamber equipment 11... Heater s, s'... Sample 3... Sample chamber 9... Stage 10... Temperature control 2... Thermocouple 13...Heating chamber patent Junto Hsu Patent attorney representing Sumitomo Metal Industries Co., Ltd. Noboru Kawano Ubo Yonehata Kaoru @Rice pollution blasphemy diagram

Claims (1)

[Claims] 1. In a plasma apparatus having a sample chamber in which a sample is processed using plasma generated by electron cyclotron resonance excitation, the sample is treated in a non-oxidizing state before being carried into the sample chamber. A plasma device characterized in that a heating chamber is provided to raise a predetermined temperature in an atmosphere.