JPH02215203A - Magnetostatic wave - Google Patents
Magnetostatic waveInfo
- Publication number
- JPH02215203A JPH02215203A JP3695689A JP3695689A JPH02215203A JP H02215203 A JPH02215203 A JP H02215203A JP 3695689 A JP3695689 A JP 3695689A JP 3695689 A JP3695689 A JP 3695689A JP H02215203 A JPH02215203 A JP H02215203A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic film
- film
- transducer
- magnetostatic wave
- spacer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 125000006850 spacer group Chemical group 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 6
- 230000000644 propagated effect Effects 0.000 claims 1
- 229910001369 Brass Inorganic materials 0.000 abstract description 3
- 239000010951 brass Substances 0.000 abstract description 3
- 239000000919 ceramic Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 42
- 238000010586 diagram Methods 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Control Of Motors That Do Not Use Commutators (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
マイクロ波帯の共振器やフィルタ等に使用する静磁波デ
バイスに関し、
トランスデユーサを変えることなく周波数の通過帯域幅
を制御可能としたことを目的とし、誘電体基板上に形成
したトランスデユーサ上の磁性膜に外部磁界を与えなが
ら該トランスデユーサからマイクロ波信号を印加したと
き、該磁性膜で発生し且つ該磁性膜中を伝播する静磁波
を利用する静磁波デバイスであって、上記磁性膜のトラ
ンスデユーサに対する面の反対面側に、該磁性膜をカバ
ーするに足る大きさの金属膜を該磁性膜と平行に配置し
て構成する。[Detailed Description of the Invention] [Summary] The present invention aims to make it possible to control the frequency passband width without changing the transducer in magnetostatic wave devices used in microwave band resonators, filters, etc. When a microwave signal is applied from the transducer while applying an external magnetic field to the magnetic film on the transducer formed on the dielectric substrate, the magnetostatic waves generated in the magnetic film and propagating in the magnetic film are The magnetostatic wave device to be utilized is constructed by arranging a metal film large enough to cover the magnetic film in parallel with the magnetic film on the side opposite to the surface of the magnetic film facing the transducer.
本発明はマイクロ波帯の共振器やフィルタ等に使用する
高周波発振器に係り、特にトランスデユーサ′を変える
ことなく周波数の通過帯域幅を制御可能として生産性の
向上を図った静磁波デバイスに関する。The present invention relates to a high-frequency oscillator used in a microwave band resonator, filter, etc., and particularly to a magnetostatic wave device that can control the frequency passband width without changing the transducer and improves productivity.
近年のデータ伝送の大容量化や高速化に伴って、ＧＨｚ
帯の共振器やフィルタ、遅延線等の開発が急ピッチで進
んでいるが、特に発振器としての静磁波デバイスはＧＨ
ｚ帯で良好な特性を示すと共に外部磁界を変化させるこ
とによって極めて広い範囲で周波数や遅延時間等が変え
られる特徴があるため多く使用されている。With the increase in capacity and speed of data transmission in recent years, GHz
Development of GH band resonators, filters, delay lines, etc. is progressing at a rapid pace, but magnetostatic wave devices used as oscillators in particular are
It is widely used because it shows good characteristics in the z-band and has the feature that the frequency, delay time, etc. can be changed over an extremely wide range by changing the external magnetic field.
゛第３図は従来の静磁波デバイスの一例を示す図であり
、第４図は第３図における通過域幅を示す図である。3 is a diagram showing an example of a conventional magnetostatic wave device, and FIG. 4 is a diagram showing the passband width in FIG. 3.
静磁波デバイスの斜視断面を示す第３図で、１は例えば
真鍮ブロック２上に装着されているアルミナの如きセラ
ミック基板であり、３は該基板１の表面に形成されてい
るトランスデユーサを示している。In FIG. 3 showing a perspective cross section of a magnetostatic wave device, 1 is a ceramic substrate such as alumina mounted on a brass block 2, and 3 is a transducer formed on the surface of the substrate 1. ing.
特に該トランスデユーサ３は厚さ数μｍ程度の金（Ａｕ
）薄膜よりなる５０Ωマイクロストリツプライン３ａ、
３ｂ （電極）で構成されており、例えば図の場合に
は３ａを信号入力側とし、３ｂを信号出力側としている
。In particular, the transducer 3 is made of gold (Au) with a thickness of several μm.
) 50Ω microstrip line 3a made of thin film,
3b (electrodes); for example, in the case of the figure, 3a is the signal input side and 3b is the signal output side.
また、厚さ３００ Ｂ ｔａ程度のガラスからなるスペ
ーサ４を介して上記トランスデユーサ３上に配設したバ
ルク状の磁性膜５は、イツトリウム・鉄・ガーネット（
Ｙ Ｉ Ｇ）からなるものである。Further, the bulk magnetic film 5 disposed on the transducer 3 via a spacer 4 made of glass with a thickness of about 300 Bta is made of yttrium, iron, garnet (
Y I G).
ここで上記マイクロストリップライン電極３ａから周波
数がＧＨｚ帯のマイクロ波信号を投入すると共に外部磁
界を付与すると、該電極３ａに電流が流れて磁界が励起
され、更に上記磁性膜５の内部でスピンの歳差運動のゆ
らぎが発生して図示矢印Ａの如くマイクロストリップラ
イン電極３ｂに向かう方向に静磁波が伝播する。Here, when a microwave signal having a frequency in the GHz band is inputted from the microstrip line electrode 3a and an external magnetic field is applied, a current flows through the electrode 3a, a magnetic field is excited, and further spins are generated inside the magnetic film 5. Precessional fluctuations occur, and a static magnetic wave propagates in a direction toward the microstrip line electrode 3b as shown by arrow A in the figure.
かかる構成になる静磁波デバイスでは、共振周波数は外
部磁界のかける方向等を変えることによって変化させる
ことができるが、該磁性膜５の内部をバスする周波数帯
域は磁性膜５の種類や上記トランスデユーサ３の設計条
件によって決定されるものであるため該静磁波デバイス
が完成した後には周波数通過域幅を所要に合わせて拡大
することができない。In a magnetostatic wave device having such a configuration, the resonant frequency can be changed by changing the direction of applying an external magnetic field, etc., but the frequency band that busses inside the magnetic film 5 depends on the type of the magnetic film 5 and the above-mentioned transducer. Since it is determined by the design conditions of the user 3, the frequency passband width cannot be expanded as required after the magnetostatic wave device is completed.
第４図は、中心周波数１０．５ ＧＨｚのマイクロ波信
号を投入したときの上記パス・バンドの実験例を示した
ものであり、横軸を周波数ＧＨ２でまた縦軸を挿入損失
ｄＢでそれぞれ表わしている。Figure 4 shows an experimental example of the above pass band when a microwave signal with a center frequency of 10.5 GHz is input, with the horizontal axis representing the frequency GH2 and the vertical axis representing the insertion loss dB. ing.
図では、ピーク点ｐから３ｄＢダウンした位置すなわち
約７ｄＢ位置での通過域幅Ｗがほぼ３０ＭＨｚであるこ
とを示している。The figure shows that the passband width W at a position 3 dB down from the peak point p, that is, at a position of about 7 dB, is approximately 30 MHz.
一方、静磁波デバイスを使用する場合に上記の通過域幅
Ｗを拡げたい場合がある。On the other hand, when using a magnetostatic wave device, there are cases where it is desired to widen the above-mentioned passband width W.
しかしかかる場合には、上述の如く磁性膜５の種類やト
ランスデユーサ３の設計条件等まで変えなければならず
、結果的に該静磁波デバイスを設計し直すことになって
効率的な面から好ましくない。However, in such a case, it is necessary to change the type of magnetic film 5, the design conditions of the transducer 3, etc. as described above, and as a result, the magnetostatic wave device has to be redesigned, which reduces efficiency. Undesirable.
従来の構成になる静磁波デバイスでは、周波数通過域幅
の制御が容易でないと言う問題があった。A conventional magnetostatic wave device has a problem in that it is not easy to control the frequency passband width.
上記問題点は、誘電体基板上に形成したトランスデユー
サ上の磁性膜に外部磁界を与えながら該トランスデユー
サからマイクロ波信号を印加したとき、該磁性膜で発生
し且つ該磁性膜中を伝播する静磁波を利用する静磁波デ
バイスであって、上記磁性膜のトランスデユーサに対す
る面の反対面側に、該磁性膜をカバーするに足る大きさ
の金属膜を該磁性膜と平行に配置してなる静磁波デバイ
スによって解決される。The above problem occurs when a microwave signal is applied from a transducer while applying an external magnetic field to a magnetic film on a transducer formed on a dielectric substrate. A magnetostatic wave device that utilizes propagating magnetostatic waves, in which a metal film large enough to cover the magnetic film is arranged parallel to the magnetic film on the opposite side of the surface of the magnetic film facing the transducer. The problem is solved by a magnetostatic wave device.
磁性膜のトランスデユーサと反対側の全面に金属膜を設
けると、該静磁波デバイスの周波数通過域幅を拡大する
ことができると共に上記磁性膜と該金属膜間の間隔によ
って該通過域幅を制御することができる。By providing a metal film on the entire surface of the magnetic film opposite to the transducer, the frequency passband width of the magnetostatic wave device can be expanded, and the passband width can be increased by the spacing between the magnetic film and the metal film. can be controlled.
本発明では磁性膜のトランスデユーサと反対側の面会面
に、直接またはスペーサを介して金属膜を設けるように
構成している。In the present invention, a metal film is provided directly or via a spacer on the facing surface of the magnetic film on the side opposite to the transducer.
従って、磁性膜やトランスデユーサを変更することなく
周波数通過域幅の拡大に対処し、または該通過域幅が制
御できる静磁波デバイスを容易に得ることができる。Therefore, it is possible to easily obtain a magnetostatic wave device in which the frequency passband width can be expanded or the passband width can be controlled without changing the magnetic film or the transducer.
〔実施例］
第１図は本発明になる静磁波デバイスの構成例を示す図
であり、第２図は通過域幅の変化を説明する図である。[Example] FIG. 1 is a diagram showing a configuration example of a magnetostatic wave device according to the present invention, and FIG. 2 is a diagram illustrating changes in passband width.
第３図同様に静磁波デバイスの斜視断面を示す第１図で
、１が例えば真鍮ブロック２上に装着されたアルミナの
如きセラミック基板であり、３が該基板１上の５０Ωマ
イクロストリツプライン３ａ、３ｂ （電極）で構成さ
れたトランスデユーサを示し、またＹＩＧからなるバル
ク状の磁性膜５が厚さ３００μｍ程度のガラスからなる
スペーサ４上に配設されていることは第３図と同様であ
る。FIG. 1 shows a perspective cross section of the magnetostatic wave device similarly to FIG. , 3b (electrodes), and the bulk magnetic film 5 made of YIG is disposed on the spacer 4 made of glass with a thickness of about 300 μm, which is the same as in FIG. 3. It is.
更に、６は該磁性膜５の全面をカバーする大きさで核部
に添着された厚さｔμｍのガラス等からなるスペーサを
示し、該スペーサ６の露出面には厚さ０．５μｍ程度の
金（Ａｕ）等よりなる金属膜７が形成されている。Further, reference numeral 6 indicates a spacer made of glass or the like with a thickness of t μm and attached to the core portion with a size that covers the entire surface of the magnetic film 5. The exposed surface of the spacer 6 is made of gold with a thickness of about 0.5 μm. A metal film 7 made of (Au) or the like is formed.
かかる構成になる静磁波デバイスでは、上記スペーサ６
の厚さすなわち磁性膜５と金属膜７との間の間隔ｔによ
って周波数通過域幅を変化させることができる。In a magnetostatic wave device having such a configuration, the spacer 6
The frequency pass band width can be changed depending on the thickness of the magnetic film 5, that is, the distance t between the magnetic film 5 and the metal film 7.
第２図は第４図の場合と同じ条件、すなわち中心周波数
１０．５ ＧＨｚのマイクロ波信号を投入したときの実
験結果を示したもので、第４図同様に横軸は周波数を縦
軸は挿入損失を表わしている。Figure 2 shows the experimental results under the same conditions as in Figure 4, that is, when a microwave signal with a center frequency of 10.5 GHz was input.As in Figure 4, the horizontal axis represents the frequency and the vertical axis represents the frequency. It represents insertion loss.
特に図で、（ａ）はスペーサ６の厚さすなわちＣｄ性膜
５と金属膜７との間の間隔りが１０００μｍの場合を、
また（ｂ）はｔが５００μｍの場合を、更に（ｃ）はｔ
が零すなわちスペーサ６を介することなく磁性膜５上に
直接金（Ａｕ）薄膜の金属膜７を形成した場合をそれぞ
れ示している。In particular, in the figure, (a) shows the case where the thickness of the spacer 6, that is, the distance between the Cd film 5 and the metal film 7, is 1000 μm.
Also, (b) shows the case where t is 500 μm, and (c) shows the case where t
The figures show the case where the metal film 7 is zero, that is, the thin metal film 7 of gold (Au) is formed directly on the magnetic film 5 without using the spacer 6.
この場合、ピーク点から３ｄＢダウンさせた位置すなわ
ち約７ｄＢ位置での３ｄＢ通過域幅Ｗは、（ａ）のとき
をＷ、 とした、とＷ ＋ ＝ ５０ Ｍ Ｉｌｚと
なり、（ｂ）の場合をＷ２としたとＷｚ ＝１００ Ｍ
ｔｌｚ、 （ｃ）の場合でＷ３ ＝２００ ＭＨｚ程度
となり、該スペーサ６の厚さｔによって上記通過域幅Ｗ
が制御できることが分かる。In this case, the 3 dB passband width W at a position 3 dB down from the peak point, that is, at a position of about 7 dB, is W in case (a), and W + = 50 M Ilz, and in case (b), When set to W2, Wz = 100 M
In the case of tlz, (c), W3 = about 200 MHz, and the above-mentioned passband width W is determined by the thickness t of the spacer 6.
It turns out that it can be controlled.
逆に、所定の３ｄＢ通過域幅Ｗを知ることによって磁性
膜５と金属膜７との間の間隔すなわちスペーサ６の厚さ
ｔが決定される。Conversely, by knowing the predetermined 3 dB passband width W, the distance between the magnetic film 5 and the metal film 7, that is, the thickness t of the spacer 6 is determined.
従って、上記の磁性膜５やトランスデユーサ３の如く設
計基本に関与する条件を変えることなく、周波数の通過
域幅Ｗを所定の値に制御できる静磁波デバイスを容易に
得ることができる。Therefore, it is possible to easily obtain a magnetostatic wave device in which the frequency passband width W can be controlled to a predetermined value without changing the conditions related to the design basics such as the above-mentioned magnetic film 5 and transducer 3.
なお、上記の金（Ａｕ）Ｆｔ［膜の代わりにアルミニウ
ム（Ａ２）よりなる金属膜７を使用しても同じ効果が得
られることを実験的にｒａ認している。It has been experimentally confirmed that the same effect can be obtained even if a metal film 7 made of aluminum (A2) is used instead of the gold (Au)Ft film described above.
第１図は本発明になる静磁波デバイスの構成例を示す図
、
第２図は通過域幅の変化を説明する図、第３図は従来の
静磁波デバイスの一例を示す図、第４図は第３図におけ
る通過域幅を示す図、である。図において、
１はセラミック基板、 ２は真鍮ブロック、３はトラ
ンスデユーサ、
３ａ、３ｂはマイクロストリップライン、４．６はスペ
ーサ、 ５は磁性膜、７は金属膜、
をそれぞれ表わす。FIG. 1 is a diagram showing an example of the configuration of a magnetostatic wave device according to the present invention, FIG. 2 is a diagram explaining changes in pass band width, FIG. 3 is a diagram showing an example of a conventional magnetostatic wave device, and FIG. is a diagram showing the passband width in FIG. 3. In the figure, 1 is a ceramic substrate, 2 is a brass block, 3 is a transducer, 3a and 3b are microstrip lines, 4.6 is a spacer, 5 is a magnetic film, and 7 is a metal film.
上述の如く本発明により、トランスデユーサを変えるこ
となく周波数の通過域幅が制御できる静磁波デバイスを
提供することができる。As described above, according to the present invention, it is possible to provide a magnetostatic wave device whose frequency passband width can be controlled without changing the transducer.
」波敢ＧＨｚ ” Wave GHz
Claims (2)
性膜に外部磁界を与えながら該トランスデューサからマ
イクロ波信号を印加したとき、該磁性膜で発生し且つ該
磁性膜中を伝播する静磁波を利用する静磁波デバイスで
あって、 上記磁性膜のトランスデューサに対する面の反対面側に
、該磁性膜をカバーするに足る大きさの金属膜を該磁性
膜と平行に配置してなることを特徴とした静磁波デバイ
ス。(1) When a microwave signal is applied from a magnetic film on a transducer formed on a dielectric substrate while applying an external magnetic field, the magnetostatic waves generated in the magnetic film and propagated in the magnetic film are used. A magnetostatic wave device, characterized in that a metal film having a size sufficient to cover the magnetic film is arranged parallel to the magnetic film on the side opposite to the surface of the magnetic film facing the transducer. Magnetostatic wave device.
サを介在させてなることを特徴とした請求項１記載の静
磁波デバイス。(2) The magnetostatic wave device according to claim 1, further comprising a spacer having a predetermined thickness interposed between the magnetic film and the metal film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1036956A JP2638181B2 (en) | 1989-02-16 | 1989-02-16 | Magnetostatic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1036956A JP2638181B2 (en) | 1989-02-16 | 1989-02-16 | Magnetostatic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02215203A true JPH02215203A (en) | 1990-08-28 |
| JP2638181B2 JP2638181B2 (en) | 1997-08-06 |
Family
ID=12484198
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1036956A Expired - Fee Related JP2638181B2 (en) | 1989-02-16 | 1989-02-16 | Magnetostatic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2638181B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0382906U (en) * | 1989-12-14 | 1991-08-23 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5523661A (en) * | 1978-08-09 | 1980-02-20 | Univ Osaka | Thin film magnetic substance multi-layer magnetic static wave delay element different in saturated magnetization |
-
1989
- 1989-02-16 JP JP1036956A patent/JP2638181B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5523661A (en) * | 1978-08-09 | 1980-02-20 | Univ Osaka | Thin film magnetic substance multi-layer magnetic static wave delay element different in saturated magnetization |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0382906U (en) * | 1989-12-14 | 1991-08-23 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2638181B2 (en) | 1997-08-06 |
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| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |