JPH02214209A - Surface acoustic wave element - Google Patents
Surface acoustic wave elementInfo
- Publication number
- JPH02214209A JPH02214209A JP3372289A JP3372289A JPH02214209A JP H02214209 A JPH02214209 A JP H02214209A JP 3372289 A JP3372289 A JP 3372289A JP 3372289 A JP3372289 A JP 3372289A JP H02214209 A JPH02214209 A JP H02214209A
- Authority
- JP
- Japan
- Prior art keywords
- piezoelectric substrate
- surface acoustic
- acoustic wave
- substrate
- spacer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 125000006850 spacer group Chemical group 0.000 claims abstract description 20
- 239000002245 particle Substances 0.000 claims abstract description 8
- 239000004065 semiconductor Substances 0.000 claims description 13
- 239000010419 fine particle Substances 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 6
- 239000003989 dielectric material Substances 0.000 claims description 2
- 230000002411 adverse Effects 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 2
- 238000009434 installation Methods 0.000 abstract description 2
- 230000005540 biological transmission Effects 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 230000003993 interaction Effects 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- -1 O・1v2o5) Chemical class 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 206010025135 lupus erythematosus Diseases 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000007500 overflow downdraw method Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010902 straw Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は圧電体基板上に空隙を隔てて半導体、導電体あ
るいは誘電体を設けている弾性表面波素子間するもので
ある。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to surface acoustic wave elements in which a semiconductor, a conductor, or a dielectric is provided on a piezoelectric substrate with a gap therebetween.
（従来の技術）
圧電体基板上に空隙を介して半導体などを設は九弾性表
゛面波素子としては、増幅器、コン？ルパ立とが知られ
ている。なお、上述の半導体に代えて、銅などの導電体
や非線形性を示す誘電体を設けたものがＴｏシ、これら
は、いづれも、圧電体基板上を伝搬する弾性素面波の減
衰を生じさせないために、スイーサレールやスペーサ４
ストヲ介して圧電体基板上に配置される。(Prior art) Semiconductors and the like are placed on a piezoelectric substrate through a gap.Nine acoustic surface wave elements are used for amplifiers, controllers, etc. It is known as Lupa Tate. Note that in place of the above-mentioned semiconductor, a conductor such as copper or a dielectric material exhibiting nonlinearity is provided, but none of these causes attenuation of the plain acoustic wave propagating on the piezoelectric substrate. For this purpose, use a sweater rail or spacer 4.
It is placed on the piezoelectric substrate via the straw.
第２図には、従来のスペーサポストを用いた弾性表面波
コンがルノ丸−の一例が示されている。こむではニオツ
酸リチウムなどの圧電体基板１上に電気信号を弾性表面
波信号に変換する櫛型入力電極２，３を設けておシ、そ
の内に位置して、圧電体基板１上に所要空隙を介してシ
リコンペースなどの半導体４が配設される。とのために
、上記圧電体基板１上のランダムな位置にスペーサポス
ト７が形成される。なお、図中、符号５は２つの弾性表
面波信号のコン／ リューシ、ン出力を取出すために、
上記半導体４に設けられた出力電極である。また、上述
の櫛型入力電極２．３はアルミニウムなどの導電材料か
らな夛、電極・リーンは通常、フォトリソグラフィー技
術を用いて作成される。FIG. 2 shows an example of a Lunomaru surface acoustic wave converter using conventional spacer posts. In this case, comb-shaped input electrodes 2 and 3 for converting electrical signals into surface acoustic wave signals are provided on a piezoelectric substrate 1 made of lithium niobate, etc. A semiconductor 4 such as silicon paste is placed through the gap. For this reason, spacer posts 7 are formed at random positions on the piezoelectric substrate 1. In addition, in the figure, reference numeral 5 is for extracting the output of the two surface acoustic wave signals.
This is an output electrode provided on the semiconductor 4. Furthermore, the comb-shaped input electrodes 2.3 mentioned above are made of a conductive material such as aluminum, and the electrodes/leans are usually created using photolithography technology.
このような分離媒質型ＡＥコン？ルパでは２つの櫛型入
力電極２．３によシ励振され、圧電体基板１上を互いに
逆方向に伝搬した弾性表面液が半導体５の下で衝突した
時に生じた電界が半導体５中のキャリヤと非線形相互作
用を起し、コン？リューシ、ン信号を生起する。A separation medium type AE controller like this? In Lupa, the electric field generated when the elastic surface liquid, which is excited by the two comb-shaped input electrodes 2.3 and propagates in opposite directions on the piezoelectric substrate 1, collide under the semiconductor 5, causes carriers in the semiconductor 5 to A nonlinear interaction occurs with the con? Generates a signal.
（発明が解決しようとする課題）
このように、圧電体基板１と半導体５との間に空隙を設
けることで表面波の伝搬を妨げることなく、非線形相互
作用を発生させることができるが。(Problem to be Solved by the Invention) In this way, by providing a gap between the piezoelectric substrate 1 and the semiconductor 5, nonlinear interaction can be generated without interfering with the propagation of surface waves.
均一で長い相互作用領域を確保するためには、上述の空
隙を極めて精密に制御する必要がある。そこで、第２図
に示すようなスペーサポスト７が用いられるのである。In order to ensure a uniform and long interaction area, it is necessary to control the above-mentioned voids very precisely. Therefore, a spacer post 7 as shown in FIG. 2 is used.
これらのスペーサポスト７は圧電体基板１上のランダム
な位置に形成され、形状は円筒形や直立体などであシ、
径は３〜６μ程度、また高さ（空隙）は５００Ｘ〜１μ
程度である。このようなスペーサポスト７は、従来、フ
ォトマスクを用いるフォトリソグラフィー技術を用いて
レジストノ！ターンを圧電体基板１上に形成して、イオ
ンビームエツチング法などで圧電体基板１上に凹凸を付
けることで形成するかスパッタ法などで８１０２などの
誘電体のポストを圧電体基板１上に形成している。なお
、この点については下記の文献に詳述されている。These spacer posts 7 are formed at random positions on the piezoelectric substrate 1, and may have a cylindrical shape, an upright shape, etc.
The diameter is about 3 to 6μ, and the height (gap) is 500X to 1μ.
That's about it. Conventionally, such spacer posts 7 are formed using a photolithography technique using a photomask. The turns are formed on the piezoelectric substrate 1, and the pattern is formed by forming irregularities on the piezoelectric substrate 1 using an ion beam etching method or the like, or by forming dielectric posts such as 8102 on the piezoelectric substrate 1 using a sputtering method or the like. is forming. Note that this point is explained in detail in the following document.
Ｊ、Ｈ＊ Ｃａｆａｒ＠１１ａ、 Ｊ＊Ａ＋＋ Ａｌｕ
ｍｏｗ、 Ｗ、Ｍ、 Ｂｒｏｗｎ。J, H* Cafar@11a, J*A++ Alu
mow, W, M, Brown.
Ｅ、 ５ｔｅｒｎ ： Ｐｒｏｇｒａｍｍａｂｌｅ Ｍ
ａｔｃｈｅｄ Ｆｌｌｔｅｒｌｎｇｖｉｉｔｈ Ａｅ
ｏｕｓｔｏ＠１＠ｅｔｒｉｅ Ｃｏｎｖｏｌｖｅｒ＋
ｓ ｉｎ ８ｐｒ＠ａｄ −８ｐ＠ｅｔｒｕｍ
５ｙｓｔ＠ｍｓ、 １９７５ Ｕｌｔｒａｓｏｎｉｃｓ
８ｙｍｐｏａ１ｕｍ Ｐｒｏｅｔｅｄｉｎｇｓ＋ ＩＥ
ＥＬ ２０５／２０８（１９７１５）。E, 5tern: Programmable M
attached Fllterlngviith Ae
ousto@1@etrie Convolver+
s in 8pr@ad -8p@etrum
5yst@ms, 1975 Ultrasonics
8ympoalum Proetedings+ IE
EL 205/208 (19715).
しかしながら、上記従来技術では、ス（−サポストを圧
電体基板１上にイオンビームエツチング法やス／母ツタ
法によって形成しているために、スペーサポストの形成
に手間がかかり、その処理の次めに大規模な装置が必要
となるだけでなく、とくにエツチング法では、圧電体基
板１の表面の大部分をエツチングすることで、表面状態
が悪くなり、弾性表面波の伝搬に悪影響を及はす可能性
がある。However, in the above-mentioned conventional technology, since the spacer posts are formed on the piezoelectric substrate 1 by the ion beam etching method or the spacer post method, it takes time and effort to form the spacer posts, and the subsequent processing is difficult. Not only is a large-scale device required for etching, but the etching method in particular etches most of the surface of the piezoelectric substrate 1, which deteriorates the surface condition and adversely affects the propagation of surface acoustic waves. there is a possibility.
（発明の目的）
本発明は上記事情にもとづいてなされたもので、スペー
サポストを、簡単かつ確実に圧電体基板上に構成でき、
かつ基板表面の平滑性を損わない弾性表面波素子を提供
しようとするものである。(Object of the Invention) The present invention has been made based on the above circumstances, and allows spacer posts to be easily and reliably constructed on a piezoelectric substrate.
The present invention also aims to provide a surface acoustic wave element that does not impair the smoothness of the substrate surface.
（課題を解決するための手段）
このため１本発明では、圧電体基板上に空隙を隔てて半
導体、導電体あるいは誘電体を設けるために、誼圧電体
基板上にスペーサポストを設けている弾性表面波素子に
おいて、上記空隙を保持するためのスペーサポストが、
所定範囲の粒径に整見られた微粒子を上記圧電体基板上
に分散設置することで構成している。(Means for Solving the Problems) Therefore, in the present invention, in order to provide a semiconductor, a conductor, or a dielectric on a piezoelectric substrate with a gap in between, spacer posts are provided on a piezoelectric substrate. In the surface wave element, the spacer post for holding the above-mentioned gap is
It is constructed by dispersing fine particles having a particle size within a predetermined range on the piezoelectric substrate.
（作用）
このような空隙保持の仕方では、従来のエツチング法な
どと異なル、基板表面を粗らすことがなく、弾性表面波
の伝搬に悪影響を及はすことがなく、また、製造が容易
で、その九めの大型装置の設ｉを必要としない。(Function) Unlike conventional etching methods, this method of maintaining air gaps does not roughen the substrate surface, does not adversely affect the propagation of surface acoustic waves, and also improves manufacturing efficiency. It is easy and does not require the installation of large-scale equipment.
（実施例）
以下、本発明の実施例を第１図を参照して具体的に説明
する。ここで符号ｌから５１では従来例の説明における
構成要素と同じである。そして、本発明では、従来例に
おけるスペーサポスト７の代シに、その機能をはたすス
ペーサポスト６が採用すれる。このスペーサポスト６ｆ
：圧電体基板１上に形成するには、先づ、所定範囲内に
粒径が整えられた微粒子を圧電体基板１上の所蚤領域に
必要量配設し、次に圧電体基板に振動を与えるなどの手
段で、微粒子が基板上にランダムに分散するようにする
。そして、更に、仁の微粒子に対して一定圧力を加えな
がら融着して圧電体基板１上に固定する。なお、この融
着法として好ましいのは超音波融着があげられる。(Example) Hereinafter, an example of the present invention will be specifically described with reference to FIG. Here, the components 1 to 51 are the same as those in the description of the conventional example. In the present invention, a spacer post 6 that fulfills this function is employed in place of the spacer post 7 in the conventional example. This spacer post 6f
: To form on the piezoelectric substrate 1, first, a necessary amount of fine particles whose particle size is adjusted within a predetermined range is placed in a certain area on the piezoelectric substrate 1, and then the piezoelectric substrate is vibrated. The fine particles are randomly dispersed on the substrate by means such as giving a Then, the fine particles are fused and fixed onto the piezoelectric substrate 1 while applying a constant pressure. Note that ultrasonic fusion is preferred as this fusion method.
材質の点では、圧電体基板１は、例えばＹカット・ニオ
ブ酸リチウム単結晶体であるとよく、また、上記微粒子
はポリスチレンが好んで用いられる。なお微粒子には、
この外にも、ガラス、シリカ、金属酸化物（例えばＭｇ
Ｏ・１ｖ２ｏ５ ）などの無機化合物、ポリエチレン、
ボリアＤａピレン、Ｉリエステル、ポリアクリル、ポリ
カー？ネイト、シリコン樹脂などのプラスチック材料の
微粒子を分級して用いることができる。In terms of material, the piezoelectric substrate 1 is preferably made of, for example, a Y-cut lithium niobate single crystal, and polystyrene is preferably used as the fine particles. In addition, fine particles include
In addition to these, glass, silica, metal oxides (such as Mg
Inorganic compounds such as O・1v2o5), polyethylene,
Boria Da pyrene, I-lyester, polyacrylic, polycar? Fine particles of plastic materials such as nate, silicone resin, etc. can be classified and used.
なお、上記実施例では、圧電体基板ｌ上にス（−サポス
ト６を介して半導体４ｆ：設ける弾性表面波素子が示さ
れているが、導電体あるいは誘電体を半導体４に代えて
設置する場合の弾性表面波素子にも適応可能であり、こ
れはコンがルパのみならず、増幅器などの他の用途にも
採用できることは勿論である。In the above embodiment, a surface acoustic wave element is shown in which the semiconductor 4f is provided on the piezoelectric substrate l via the support post 6, but when a conductor or a dielectric is installed in place of the semiconductor 4. It goes without saying that the present invention can be applied to surface acoustic wave elements such as 2000 and 2000, and can be used not only for lupus but also for other applications such as amplifiers.
このような構成では、従来のようなイオンビームエツチ
ング法などを採用するものと異なり、比較的簡単な装置
でスペーサーストを圧電体基板上に撰集でき、しかも、
エツチング法による場合のように圧電体基板の表面を粗
らして、弾性表面波の伝搬に悪影響を与えるおそれもな
い。With this configuration, unlike conventional methods that employ ion beam etching, etc., spacers can be collected on a piezoelectric substrate with a relatively simple device, and moreover,
Unlike the etching method, there is no risk of roughening the surface of the piezoelectric substrate and adversely affecting the propagation of surface acoustic waves.
（発明の効果）
本発明は以上詳述し良ようになり、微粒子を圧電体基板
上の分散して融着させるという手法でスペーサデストを
構成するので、その製作が容易でかつ確実であ夛、所要
の弾性表面波の伝搬効率も保つことができる。(Effects of the Invention) The present invention has been described in detail above, and since the spacer dest is constructed by dispersing and fusing fine particles on a piezoelectric substrate, its production is easy, reliable, and numerous. , it is also possible to maintain the required surface acoustic wave propagation efficiency.
第１図は本発明の一実施例を示す縦断側面図、第２図は
従来例を示す縦断側面図である。
１・・・圧電体基板、２．３・・・櫛型入力電極、４・
・・半導体ｖ５・・・出力電極、６・・・微粒子による
スイーサポスト。
代理人 弁理士 山 下 穣 平FIG. 1 is a vertical side view showing an embodiment of the present invention, and FIG. 2 is a vertical side view showing a conventional example. 1... Piezoelectric substrate, 2.3... Comb-shaped input electrode, 4.
...Semiconductor v5...Output electrode, 6...Sweeter post by fine particles. Agent Patent Attorney Johei Yamashita
Claims (1)
誘電体を設けるために、該圧電体基板上にスペーサポス
トを設けている弾性表面波素子において、上記空隙を保
持するためのスペーサポストが、所定範囲の粒径に整え
られた微粒子を上記圧電体基板上に分散設置することで
構成していることを特徴とする弾性表面波素子。In a surface acoustic wave element in which a spacer post is provided on a piezoelectric substrate in order to provide a semiconductor, a conductor, or a dielectric material across a gap on the piezoelectric substrate, the spacer post for holding the gap is A surface acoustic wave device characterized in that it is constructed by dispersing fine particles arranged to have a particle size within a predetermined range on the piezoelectric substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3372289A JPH02214209A (en) | 1989-02-15 | 1989-02-15 | Surface acoustic wave element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3372289A JPH02214209A (en) | 1989-02-15 | 1989-02-15 | Surface acoustic wave element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02214209A true JPH02214209A (en) | 1990-08-27 |
Family
ID=12394292
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3372289A Pending JPH02214209A (en) | 1989-02-15 | 1989-02-15 | Surface acoustic wave element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02214209A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996025792A1 (en) * | 1995-02-16 | 1996-08-22 | Asahi Kasei Kogyo Kabushiki Kaisha | Elastic surface wave functional device and electronic circuit using the element |
| US6198197B1 (en) | 1995-02-16 | 2001-03-06 | Asahi Kasei Kogyo Kabushiki Kaisha | Surface acoustic wave element and electronic circuit using the same |
-
1989
- 1989-02-15 JP JP3372289A patent/JPH02214209A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996025792A1 (en) * | 1995-02-16 | 1996-08-22 | Asahi Kasei Kogyo Kabushiki Kaisha | Elastic surface wave functional device and electronic circuit using the element |
| US6198197B1 (en) | 1995-02-16 | 2001-03-06 | Asahi Kasei Kogyo Kabushiki Kaisha | Surface acoustic wave element and electronic circuit using the same |
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