JPH02214046A - Electron beam recording and reproducing device - Google Patents
Electron beam recording and reproducing deviceInfo
- Publication number
- JPH02214046A JPH02214046A JP1033567A JP3356789A JPH02214046A JP H02214046 A JPH02214046 A JP H02214046A JP 1033567 A JP1033567 A JP 1033567A JP 3356789 A JP3356789 A JP 3356789A JP H02214046 A JPH02214046 A JP H02214046A
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- electron
- optical system
- recording medium
- recording
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010894 electron beam technology Methods 0.000 title claims abstract description 33
- 230000003287 optical effect Effects 0.000 claims abstract description 42
- 239000004065 semiconductor Substances 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims 3
- 238000001514 detection method Methods 0.000 claims 1
- 230000004075 alteration Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
Abstract
Description
【産業上の利用分野1
本発明は、電子線を用いた高密度記録再生装置に係り、
特に小型化に適した電子光学装置に関する。
【従来の技術】
電子線は容易に細く絞れることから、記録再生装置に電
子線を用いれば極めて高密度化が図られる。このような
観点から特開昭59−221846に記載されているよ
うな記録再生装置(第3図参照)がすでに考案されてい
る。[Industrial Application Field 1] The present invention relates to a high-density recording and reproducing device using an electron beam,
In particular, the present invention relates to an electro-optical device suitable for miniaturization. 2. Description of the Related Art Since electron beams can be narrowed easily, extremely high density recording and reproducing devices can be achieved by using electron beams. From this point of view, a recording and reproducing apparatus (see FIG. 3) as described in Japanese Patent Application Laid-Open No. 59-221846 has already been devised.
しかし、本発明の電子光学系を記録再生装置に適用した
場合、偏向収差のために偏向器と記録媒体との距離を十
分長くする必要がある。そのために電子光学系は非常に
大型になる欠点やレンズや偏向器の収差のため高密度化
が図れないという問題があった。
本発明は、上記問題を解決し、極めて小型化に適した電
子光学装置を提供することにある。However, when the electron optical system of the present invention is applied to a recording/reproducing device, it is necessary to make the distance between the deflector and the recording medium sufficiently long due to deflection aberration. For this reason, the electron optical system has the disadvantage of being extremely large, and the aberrations of the lenses and deflectors make it impossible to achieve high density. The present invention solves the above problems and provides an electro-optical device that is extremely suitable for miniaturization.
電子線を偏向するためには偏向器が必要で、偏向器を用
いると偏向収差が生じることは避けられない。一般に、
偏向収差を小さくするには偏向器のサイズを大きくすれ
ばよく、レンズの場合と逆である。したがって、小型の
電子光学系で大角度に電子線を偏向することは、一般に
困難である。
そこで、本発明では複数の電子光学系を二次元的に配置
して各光学系は小角度偏向にして小型化を図った。A deflector is required to deflect the electron beam, and when a deflector is used, it is inevitable that deflection aberration will occur. in general,
In order to reduce deflection aberration, it is sufficient to increase the size of the deflector, which is the opposite of the case with lenses. Therefore, it is generally difficult to deflect an electron beam to a large angle with a small electron optical system. Therefore, in the present invention, a plurality of electron optical systems are arranged two-dimensionally, and each optical system is deflected by a small angle to achieve miniaturization.
【作用1
電子線の偏向を小角度にすれば、電子光学系を小型化で
きることはすでに述べた。この場合、電子線の走査範囲
は小さく制限されるので、記録媒体全面を走査すること
はできない。そこで、この小型光学系を複数個にすれば
可能となる。
一方、上記記録媒体は第3図に示すように円盤状で回転
されているので、上記小型光学系を半径方向に一列に配
置し、電子線はこの半径方向のみに偏向すれば記録媒体
全面を走査できることになる。しかし、この場合電子線
の偏向範囲は光学系間の距離程度にする必要があり、実
装を考慮するとこれも困難である。
そこで1本発明ではこの小型光学系を第2図に示すよう
に2次元的に配置した。このことにより、光学系の配置
を容易にでき、しかも電子線の偏向範囲を小さくしても
記録媒体全面を走査できることになる。
【実施例】
本発明の一実施例を第1図と第2図を用いて説明する。
第1図(a)と同図(b)は互いに直行した断面図であ
る。電子銃1からでた電子線2は、いくつかのレンズ(
ここでは簡単のために1個で示す)3により記録媒体4
に照射される。このとき電子線2は、偏向器5により媒
体4上を走査される。
また、電子線2が媒体4上を照射したときに出てくる信
号(例えば、二次電子や反射電子)6は検出器7により
検出される。また、電子線2の試料照射をオン、オフさ
せるためのプランカー8も配置されている。
このような電子光学系を第1図に示すようにm個−列に
並べて電子光学系列10とし、第2図に示すように、こ
の電子光学系列(10〜120)が円盤状記録媒体4の
円周方向にn個配置されている。なお、このn個の電子
光学列は、各電子光学系の光学軸が同一円周・上で重な
らないように少しづつずらせて配置されている。
円盤状記録媒体4で、中心を軸に回転し、半径R1から
R2の範囲に記録されるものである。本発明の一実施例
では、R1=30mm、R2=150mm、n=12、
m=12、すなわち総数mn=144個の電子光学系を
第2図のように配置した。このとき、半径方向の電子光
学系間の距離りはn= (R2−R1)/m=10mm
で電子光学系列10を構成すればよく、また、各電子光
学系の光軸からの偏向量r(=D/2n)は0.5mm
もあれば十分となる。このように偏向量が小さいので偏
向収差は非常に小さく、電子線を細く絞ることが容易と
なり、極めて高密度の記録が可能となる。
ここで、電子光学系間の距離りを10mmでおこなうた
めに、半径方向の電子光学系(本実施例では12個)は
一体化されている。この一体化を容易に実現するために
、電子銃1は半導体のPN接合から電子を取り出す半導
体電子銃を用いており、レンズ3は静電形を、偏向器5
は磁界形を用いている。このような光学系により、加速
電圧5kVで電子線を0.1μmに絞り、109ビツト
/c m 2の高記録密度を実現した。
本実施例では、半径方面毎に電子光学系を一体化したが
、これに限るものではないことは言うまでもなく、要は
複数個の電子光学系を第3図の実施例のように精度よく
配置すればよいのである。
また、電子光学系も本実施例のものに限るものではない
。例えば、電子銃に電界放射形や熱電子銃を用いてもよ
いし、レンズ3や偏向器5には静電形、磁界形いずれを
用いてもよいことは言うまでもない、さらに、この電子
光学系の個数も本実施例に限ることなく本発明を実施で
きることは明らかである。
(発明の効果1
本発明によれば電子線の偏向範囲を小さくすることがで
きるので、極めて小型の電子線記録再生装置を実現でき
る効果がある。[Effect 1] It has already been mentioned that the electron optical system can be made smaller by making the deflection of the electron beam smaller. In this case, since the scanning range of the electron beam is limited to a small area, it is not possible to scan the entire surface of the recording medium. Therefore, it becomes possible to use a plurality of small optical systems. On the other hand, since the above-mentioned recording medium is rotated in a disk shape as shown in Fig. 3, by arranging the above-mentioned small optical systems in a line in the radial direction and deflecting the electron beam only in this radial direction, the entire surface of the recording medium can be covered. It will be possible to scan. However, in this case, the deflection range of the electron beam needs to be approximately the distance between the optical systems, which is also difficult when considering implementation. Therefore, in the present invention, this compact optical system is arranged two-dimensionally as shown in FIG. As a result, the optical system can be easily arranged, and the entire surface of the recording medium can be scanned even if the deflection range of the electron beam is reduced. [Embodiment] An embodiment of the present invention will be described with reference to FIGS. 1 and 2. FIG. 1(a) and FIG. 1(b) are cross-sectional views taken perpendicular to each other. The electron beam 2 emitted from the electron gun 1 is passed through several lenses (
(Here, for simplicity, only one piece is shown.) 3 indicates the recording medium 4.
is irradiated. At this time, the electron beam 2 is scanned over the medium 4 by the deflector 5. Further, a signal (for example, secondary electrons or reflected electrons) 6 that is generated when the electron beam 2 irradiates the medium 4 is detected by a detector 7. Further, a plunker 8 for turning on and off irradiation of the sample with the electron beam 2 is also arranged. As shown in FIG. 1, m pieces of such electron optical systems are arranged in a row to form an electron optical system 10, and as shown in FIG. n pieces are arranged in the circumferential direction. Note that the n electron optical arrays are arranged so that the optical axes of the respective electron optical systems do not overlap on the same circumference and are slightly shifted from each other. It is a disc-shaped recording medium 4 that rotates around the center and records in a radius range from R1 to R2. In one embodiment of the invention, R1=30mm, R2=150mm, n=12,
m=12, that is, the total number mn=144 electron optical systems were arranged as shown in FIG. At this time, the distance between the electron optical systems in the radial direction is n = (R2-R1)/m = 10 mm
The electron optical system 10 may be configured with
It is sufficient if there is. Since the amount of deflection is small in this way, the deflection aberration is very small, making it easy to focus the electron beam narrowly, making extremely high-density recording possible. Here, in order to maintain the distance between the electron optical systems at 10 mm, the radial electron optical systems (12 in this embodiment) are integrated. In order to easily realize this integration, the electron gun 1 is a semiconductor electron gun that extracts electrons from a PN junction of a semiconductor, the lens 3 is an electrostatic type, and the deflector 5 is an electrostatic type.
uses a magnetic field type. With such an optical system, the electron beam was focused to 0.1 μm at an accelerating voltage of 5 kV, and a high recording density of 109 bits/cm 2 was achieved. In this embodiment, the electron optical systems are integrated in each radial direction, but it goes without saying that the system is not limited to this.In short, multiple electron optical systems are arranged with precision as in the embodiment shown in Fig. 3. All you have to do is do it. Further, the electron optical system is not limited to that of this embodiment. For example, it goes without saying that a field emission type or a thermionic electron gun may be used for the electron gun, and either an electrostatic type or a magnetic field type may be used for the lens 3 and the deflector 5. It is clear that the present invention can be practiced without limiting the number of objects to this embodiment. (Effect of the Invention 1) According to the present invention, the deflection range of the electron beam can be reduced, so that an extremely compact electron beam recording and reproducing apparatus can be realized.
第1図(a)は本発明の一実施例の電子光学系列の横断
面図。同図(b)は上記電子光学系列の縦断面図、第2
図は本発明の電子線記録再生装置における各電子光学系
列の配置を示した平面図。
第3図は従来の電子線記録再生装置を示す概略縦断面図
である。
符号の説明
1.301:電子銃、2,302:電子線、3.303
:レンズ、4,304:記録媒体、5,305:偏向器
、6:信号(例えば、二次電子や反射電子)、7,30
7:検出器、8ニブランカー9ニアノード、10.20
.30. ・・・・・12o:電子光学系列、11.
12.13.14:電子光学系。
162図
第3園FIG. 1(a) is a cross-sectional view of an electron optical system according to an embodiment of the present invention. The same figure (b) is a vertical cross-sectional view of the above-mentioned electron optical system.
The figure is a plan view showing the arrangement of each electron optical system in the electron beam recording/reproducing apparatus of the present invention. FIG. 3 is a schematic longitudinal sectional view showing a conventional electron beam recording/reproducing apparatus. Explanation of symbols 1.301: Electron gun, 2,302: Electron beam, 3.303
: Lens, 4,304: Recording medium, 5,305: Deflector, 6: Signal (e.g. secondary electrons or reflected electrons), 7,30
7: Detector, 8 niblanker 9 near node, 10.20
.. 30. ...12o: Electron optical system, 11.
12.13.14: Electron optical system. Figure 162 3rd garden
Claims (1)
るレンズ手段と、該電子線を該記録媒体上で走査する偏
向手段と、該電子線を該記録媒体に照射したときに発生
する信号を検出する検出手段と、該記録媒体に該電子線
の照射をオン、オフさせるブランキング手段とを具備し
た電子光学系を二次元的に配置したことを特徴とする電
子線記録再生装置。 2、上記の記録媒体は円盤上であって該円盤の中心を軸
として回転し、また電子光学系は放射状に複数個配置さ
れ、放射状の中心と各電子光学系との距離がすべて異な
ることを特徴とする請求項第1項記載の電子線記録再生
装置。 3、上記の電子光学系において、電子銃は半導体であり
、レンズは静電形であり、偏向器は磁界形であることを
特徴とする請求項第1項もしくは第2項のいずれかに記
載の電子線記録再生装置。[Scope of Claims] 1. Lens means for irradiating a recording medium with an electron beam emitted from an electron gun, a deflection means for scanning the electron beam on the recording medium, and a lens means for irradiating the recording medium with the electron beam; It is characterized in that an electron optical system is two-dimensionally arranged, which includes a detection means for detecting a signal generated when irradiating the recording medium, and a blanking means for turning on and off the irradiation of the electron beam on the recording medium. Electron beam recording and reproducing equipment. 2. The above recording medium is on a disk and rotates around the center of the disk, and a plurality of electron optical systems are arranged radially, and the distances between the radial center and each electron optical system are all different. An electron beam recording and reproducing apparatus according to claim 1, characterized in that: 3. In the above electron optical system, the electron gun is a semiconductor, the lens is an electrostatic type, and the deflector is a magnetic field type. electron beam recording and reproducing equipment.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1033567A JPH02214046A (en) | 1989-02-15 | 1989-02-15 | Electron beam recording and reproducing device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1033567A JPH02214046A (en) | 1989-02-15 | 1989-02-15 | Electron beam recording and reproducing device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02214046A true JPH02214046A (en) | 1990-08-27 |
Family
ID=12390123
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1033567A Pending JPH02214046A (en) | 1989-02-15 | 1989-02-15 | Electron beam recording and reproducing device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02214046A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007304627A (en) * | 2007-08-06 | 2007-11-22 | Fujitsu Ltd | Electron beam device |
JP2007334362A (en) * | 2007-08-06 | 2007-12-27 | Fujitsu Ltd | Electron beam device |
-
1989
- 1989-02-15 JP JP1033567A patent/JPH02214046A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007304627A (en) * | 2007-08-06 | 2007-11-22 | Fujitsu Ltd | Electron beam device |
JP2007334362A (en) * | 2007-08-06 | 2007-12-27 | Fujitsu Ltd | Electron beam device |
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