JPH02209729A - Manufacture of semiconductor device and apparatus for removing foreign substance - Google Patents
Manufacture of semiconductor device and apparatus for removing foreign substanceInfo
- Publication number
- JPH02209729A JPH02209729A JP3055289A JP3055289A JPH02209729A JP H02209729 A JPH02209729 A JP H02209729A JP 3055289 A JP3055289 A JP 3055289A JP 3055289 A JP3055289 A JP 3055289A JP H02209729 A JPH02209729 A JP H02209729A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- gas
- foreign matter
- semiconductor substrate
- carbon dioxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 49
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000000126 substance Substances 0.000 title abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 17
- 238000005530 etching Methods 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 abstract description 44
- 229910002092 carbon dioxide Inorganic materials 0.000 abstract description 22
- 239000001569 carbon dioxide Substances 0.000 abstract description 22
- 229910052782 aluminium Inorganic materials 0.000 abstract description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 8
- 239000010410 layer Substances 0.000 abstract description 7
- 239000011229 interlayer Substances 0.000 abstract description 3
- 238000002161 passivation Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 46
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 150000001491 aromatic compounds Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000010587 phase diagram Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、半導体装置の製造工程において発生した異物
を半導体基板上から除去する半導体装置の製造方法及び
異物除去装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for manufacturing a semiconductor device and a foreign matter removal apparatus for removing foreign matter generated during the manufacturing process of a semiconductor device from a semiconductor substrate.
従来の技術
従来、半導体装置の製造工程において発生した異物が付
着したまま半導体装置を製造すると、半導体装置の信頓
性が確保できず、歩留まりも良くないため異物、を半導
体基板上から除去する必要があり、その工程として硫酸
と過酸化水素水の混合溶液中に半導体基板を浸す方法が
用いられていた。Conventional technology Conventionally, if semiconductor devices are manufactured with foreign matter generated during the manufacturing process of semiconductor devices attached, the reliability of the semiconductor device cannot be ensured and the yield rate is also poor, so it is necessary to remove the foreign matter from the semiconductor substrate. The process involved immersing the semiconductor substrate in a mixed solution of sulfuric acid and hydrogen peroxide.
但し金属配線層形成後の半導体基板では、金属配線層が
硫酸と過酸化水素水の混合溶液に溶解してしまうために
、上記方法は採用できない。よって、金属薄膜形成後の
半導体基板では、ｔ１硝酸中に半導体基板を浸す方法が
用いられていた。However, in the case of a semiconductor substrate after a metal wiring layer has been formed, the above method cannot be adopted because the metal wiring layer will be dissolved in a mixed solution of sulfuric acid and hydrogen peroxide. Therefore, for a semiconductor substrate after forming a metal thin film, a method has been used in which the semiconductor substrate is immersed in t1 nitric acid.
発明が解決しようとする課題
しかし、かかる構成によれば、濃硝酸は硫酸−過酸化水
素水の混合溶液はど洗浄力が強くないため、洗浄後も半
導体基板上に異物が残存することがある。特にドライエ
ツチング後パターン側壁に付着するポリマーについては
非常に除去が困難であった。このようなポリマー等の異
物が付着したまま半導体装置を製造すると、半導体装置
の信頼性が確保できず、歩留まりも良くないという問題
があった。Problems to be Solved by the Invention However, with this configuration, foreign matter may remain on the semiconductor substrate even after cleaning, since concentrated nitric acid does not have strong cleaning power as a mixed solution of sulfuric acid and hydrogen peroxide. . In particular, it was very difficult to remove the polymer that adhered to the sidewalls of the pattern after dry etching. If a semiconductor device is manufactured with such foreign matter such as polymer attached, there is a problem that the reliability of the semiconductor device cannot be ensured and the yield is also poor.
本発明は、上述の問題点に鑑みて試されたもので、金属
薄膜形成後の半導体基板において、異物を完全に除去す
ることができる半導体装置の製造方法及び異物除去装置
を提供することを目的とする。The present invention has been attempted in view of the above-mentioned problems, and an object of the present invention is to provide a method for manufacturing a semiconductor device and a foreign matter removal device that can completely remove foreign matter from a semiconductor substrate after forming a metal thin film. shall be.
課題を解決するための手段
本発明は上述の課題を解決するため、半導体基板を液化
ガス又は超臨界ガスと接触させ、半導体装置の製造工程
において発生した異物を前記半導体基板上から除去させ
るという構成を備えたものである。また他の発明は液化
ガス又は超臨界ガスを生成する機構と、物品を前記液化
ガス又は超臨界ガスと接触させる機構を備えたものであ
る。Means for Solving the Problems In order to solve the above-mentioned problems, the present invention has a structure in which a semiconductor substrate is brought into contact with liquefied gas or supercritical gas, and foreign substances generated during the manufacturing process of a semiconductor device are removed from the semiconductor substrate. It is equipped with the following. Still another invention includes a mechanism for generating liquefied gas or supercritical gas, and a mechanism for bringing an article into contact with the liquefied gas or supercritical gas.
作用
本発明は上述の構成によって、有機物質からなる異物を
超臨界ガス又は液化ガスと接触させると、異物は容易に
超臨界ガス又は液化ガス中に溶解する。ここで液化ガス
とは、圧力−温度の状態図において飽和蒸気圧線以上の
圧力状態にあり、大気圧下、常温ではガス状であるもの
をいう。超臨界ガスとは、圧力−温度の状態図において
臨界温度以上かつ、臨界圧力以上の状態にあるものをい
う。Effect of the present invention With the above-described structure, when a foreign substance made of an organic substance is brought into contact with a supercritical gas or liquefied gas, the foreign substance easily dissolves in the supercritical gas or liquefied gas. Here, the liquefied gas refers to gas that is in a pressure state equal to or higher than the saturated vapor pressure line in a pressure-temperature phase diagram and is gaseous at atmospheric pressure and room temperature. A supercritical gas is a gas that is in a state of a critical temperature or more and a critical pressure in a pressure-temperature phase diagram.
一般にこの臨界温度は低いため（二酸化炭素：３１℃）
、熱により金属配線等に悪影響を与えることなく半導体
基板上の異物を除去することができる。Generally, this critical temperature is low (carbon dioxide: 31℃)
, foreign matter on a semiconductor substrate can be removed without adversely affecting metal wiring or the like due to heat.
また超臨界ガスの粘性は非常に低いため、液体を用いた
洗浄よりも効率良く微細なパターンの間に浸透し洗浄を
行なうことができる。よって、本発明による方法を用い
れば、半導体基板上の異物を完全に除去することができ
、高信頼性の半導体装置を歩留まり良（製造することが
できる。Furthermore, since the viscosity of supercritical gas is very low, it can penetrate between fine patterns and perform cleaning more efficiently than cleaning using liquid. Therefore, by using the method according to the present invention, foreign substances on a semiconductor substrate can be completely removed, and highly reliable semiconductor devices can be manufactured at a high yield.
実施例
（実施例１）
以下、図面に基づいて本発明について更に詳しく説明す
る。第１図は、本発明の一実施例における半導体装置の
製造方法を示す工程断面図である。Example (Example 1) Hereinafter, the present invention will be described in more detail based on the drawings. FIG. 1 is a process cross-sectional view showing a method of manufacturing a semiconductor device in an embodiment of the present invention.
第１図（ａ）において、ｐ型半導体基板１上に選択酸化
法を用いてフィールド酸化膜２を形成する。ゲート酸化
膜３、ゲート電極４を形成し、イオン注入法によりｎ型
拡散層５を形成する。第１層間絶縁膜６を堆積し、コン
タクトホール７を設け、アルミ薄膜８１を堆積する。さ
らに、レジストパターン８２を形成する。次に、レジス
トパターン８２をマスクにしてアルミ薄膜８Ｉを反応性
イオンエツチング（ＲＩＥ）によりエツチングする。エ
ツチング及びレジスト除去を行った後の部分拡大断面図
を第１図（ｂ）に示す。第１図（ｂ）において、形成さ
れた第１アルミ配線層８の側壁には異物９が堆積する。In FIG. 1(a), a field oxide film 2 is formed on a p-type semiconductor substrate 1 using a selective oxidation method. A gate oxide film 3 and a gate electrode 4 are formed, and an n-type diffusion layer 5 is formed by ion implantation. A first interlayer insulating film 6 is deposited, a contact hole 7 is formed, and an aluminum thin film 81 is deposited. Furthermore, a resist pattern 82 is formed. Next, using the resist pattern 82 as a mask, the aluminum thin film 8I is etched by reactive ion etching (RIE). A partially enlarged sectional view after etching and resist removal is shown in FIG. 1(b). In FIG. 1(b), foreign matter 9 is deposited on the side wall of the first aluminum wiring layer 8 that has been formed.
異物９はエツチングの異方性を向上させるために用いた
ポリマー等の堆積物である。次に、第２図においてｐ型
半導体基板１を適当なベッセル２００内に設置し、超臨
界二酸化炭素ガス２０１に接触させる。The foreign matter 9 is a deposit of a polymer or the like used to improve the anisotropy of etching. Next, in FIG. 2, the p-type semiconductor substrate 1 is placed in a suitable vessel 200 and brought into contact with supercritical carbon dioxide gas 201.
超臨界二酸化炭素ガス２０＋の圧力及び温度はそれぞれ
７５〜１００気圧、５０−１００’Ｃが適当である。超
臨界二酸化炭素ガス２０１は有機物に対する溶解力が非
常に高い。このため、ポリマー等の堆積物である異物９
は超臨界二酸化炭素ガス２０１中に容易に溶解して、ｐ
型半導体基板１上から除去できる。異物除去後の部分拡
大断面図を第１図（Ｃ）に示す。第１図（ｄ）において
第１層間絶縁膜６Ｏを形成し、スルーホールロを形成す
る。スルーホール形成のエツチングにおいてもスルーホ
ール１１側壁に異物９類似の異物＋２０が堆積する。よ
って、この異物１２Ｇを除去するために再度半導体基板
１を超臨界二酸化炭素ガスに接触させる。異物＋２０除
去後の部分拡大断面図を第１図（ｅ）に示す。次に第２
アルミ配線層１２を形成し、パッジベージロン膜１３を
形成して半導体装置が完成する。完成後の部分拡大断面
図を第１図（ｆ）に示す。本実施例のように、完全に異
物を除去すると信頼性の高い半導体装置が製造できる。The pressure and temperature of the supercritical carbon dioxide gas 20+ are preferably 75 to 100 atm and 50 to 100'C, respectively. Supercritical carbon dioxide gas 201 has a very high ability to dissolve organic matter. For this reason, foreign matter 9 which is a deposit of polymer etc.
is easily dissolved in supercritical carbon dioxide gas 201, and p
It can be removed from the top of the semiconductor substrate 1. A partially enlarged cross-sectional view after removing foreign matter is shown in FIG. 1(C). In FIG. 1(d), a first interlayer insulating film 6O is formed, and through holes are formed. Also in the etching for forming the through hole, foreign matter +20 similar to foreign matter 9 is deposited on the side wall of the through hole 11. Therefore, in order to remove this foreign material 12G, the semiconductor substrate 1 is brought into contact with supercritical carbon dioxide gas again. A partially enlarged cross-sectional view after foreign matter +20 has been removed is shown in FIG. 1(e). Then the second
An aluminum wiring layer 12 is formed, a padding film 13 is formed, and the semiconductor device is completed. A partially enlarged sectional view after completion is shown in FIG. 1(f). As in this embodiment, if foreign matter is completely removed, a highly reliable semiconductor device can be manufactured.
なお本実施例においては異物除去に超臨界二酸化炭素ガ
スを用いたが、液化状態の二酸化炭素ガスを用いても良
い。また、異物を溶解し、除去することができる溶剤な
ら何を用いても良い。但し、金属薄膜を溶解するものは
用いることができない。In this embodiment, supercritical carbon dioxide gas was used to remove foreign matter, but liquefied carbon dioxide gas may also be used. Further, any solvent that can dissolve and remove foreign matter may be used. However, materials that dissolve metal thin films cannot be used.
また、本実施例においては金属薄膜としてアルミニウム
を用いたが、他の金属を用いても良い。ただし、溶剤と
の組合せを考慮し、金属の溶解を防ぐ必要がある。さら
に、本実施例においては物品としてｐ型半導体基板を用
いたが、ｎ型半導体基板やガラス基板等その他の無機材
料を用いても良い。付着している異物の種類によっては
、超臨界ガス又は液化ガス中に抽出助剤としてアルコー
ル、芳香族化合物等の有機溶剤や酸などを含膏させるこ
とが効果的である。Further, although aluminum is used as the metal thin film in this embodiment, other metals may be used. However, it is necessary to consider the combination with the solvent and prevent the metal from dissolving. Further, in this embodiment, a p-type semiconductor substrate is used as the article, but other inorganic materials such as an n-type semiconductor substrate or a glass substrate may also be used. Depending on the type of foreign matter attached, it is effective to impregnate the supercritical gas or liquefied gas with an organic solvent such as alcohol, an aromatic compound, or an acid as an extraction aid.
（実施例２）
第３図は本発明の一実施例における異物除去装置の部分
拡大断面図である。本装置の主要部分は、圧力温度制御
機構１０２とベッセル１０３から構成される。圧力温度
制御機構１０２は超臨界ガス又は液化ガスを生成するた
めのものであり、ベッセル１０３は異物を除去させたい
物品と超臨界ガス又は液化ガスを接触させるためのもの
である。第３図において、異物を除去させたい物品１０
４をベッセル１０３内に設置する。二酸化炭素ボンベ１
０１より二酸化炭素ガスを圧力温度制御機構１０２に導
入し、ガスの圧力、及び温度をそれぞれ７５〜１００気
圧、５０〜１００℃に制御する。この時、二酸化炭素ガ
スは超臨界状態となる。このようにして生成した超臨界
二酸化炭素ガス１０５をベッセル１０３内に導入する。(Embodiment 2) FIG. 3 is a partially enlarged sectional view of a foreign matter removing device in an embodiment of the present invention. The main parts of this device are comprised of a pressure and temperature control mechanism 102 and a vessel 103. The pressure and temperature control mechanism 102 is for generating supercritical gas or liquefied gas, and the vessel 103 is for bringing the supercritical gas or liquefied gas into contact with the article from which foreign substances are to be removed. In FIG. 3, an article 10 from which foreign matter is to be removed
4 is installed in the vessel 103. Carbon dioxide cylinder 1
Carbon dioxide gas is introduced into the pressure and temperature control mechanism 102 from 01, and the pressure and temperature of the gas are controlled to 75 to 100 atm and 50 to 100°C, respectively. At this time, carbon dioxide gas becomes supercritical. The supercritical carbon dioxide gas 105 thus generated is introduced into the vessel 103.
超臨界二酸化炭素ガス１０５は有機物に対する溶解力が
非常に高い。Supercritical carbon dioxide gas 105 has a very high ability to dissolve organic matter.
このため、物品１０４上の異物は超臨界二酸化炭素ガス
１０５中に容易に溶解して、物品１０４上から除去でき
る。物品！０４上の異物の種類によって超臨界二酸化炭
素ガス１０５を連続して流したほうがよいものと、断続
的に流したほうがよいものがある。ベッセル１０３は、
物品１０４と超臨界二酸化炭素ガス１０５が効率良く接
触できる形状であればどのようなものでもよい。本実施
例においては異物除去に超臨界二酸化炭素ガスを用いた
が、液化状態の二酸化炭素ガスを用いても良い。また、
異物を溶解し、除去することができる溶剤なら何を用い
ても良い。また付着している異物の種類によっては、超
臨界ガス又は液化ガス中に抽出助剤としてアルコール、
芳香族化合物等の有機溶剤や酸などを含有させることが
効果的であるため、抽出助剤を用いる場合は、圧力温度
制御機構１０２内に抽出助剤混合器を設ける必要がある
。Therefore, foreign matter on the article 104 can be easily dissolved in the supercritical carbon dioxide gas 105 and removed from the article 104. Goods! Depending on the type of foreign matter on 04, there are some cases in which it is better to flow the supercritical carbon dioxide gas 105 continuously, and there are cases in which it is better to flow the supercritical carbon dioxide gas 105 intermittently. Vessel 103 is
Any shape may be used as long as the article 104 and the supercritical carbon dioxide gas 105 can come into contact with each other efficiently. In this embodiment, supercritical carbon dioxide gas was used to remove foreign matter, but liquefied carbon dioxide gas may also be used. Also,
Any solvent that can dissolve and remove foreign matter may be used. Depending on the type of foreign matter attached, alcohol may be used as an extraction aid in supercritical gas or liquefied gas.
Since it is effective to contain organic solvents such as aromatic compounds, acids, etc., when using an extraction aid, it is necessary to provide an extraction aid mixer in the pressure and temperature control mechanism 102.
発明の効果
以上の説明から明らかなように本発明は、有機物質から
なる異物を超臨界ガス又は液化ガスと接触させると異物
は容易に超臨界ガス又は液化ガス中に溶解でき、物品上
から異物を完全に除去することができる。これにより、
高信頼性の半導体装置を歩留まり良く製造することがで
きる。よって、その実用的効果は大きい。Effects of the Invention As is clear from the above explanation, the present invention has the advantage that when a foreign substance made of an organic substance is brought into contact with a supercritical gas or liquefied gas, the foreign substance can be easily dissolved in the supercritical gas or liquefied gas, and the foreign substance can be removed from the article. can be completely removed. This results in
Highly reliable semiconductor devices can be manufactured with high yield. Therefore, its practical effects are great.
第１図は本発明の一実施例における半導体装置の製造方
法を示す工程断面図、第２図は本発明の一実施例におけ
る半導体基板上の異物除去の様子を示す断面図、第３図
は本発明の一実施例における異物除去装置の部分拡大断
面図である。
１・・・・ｐ型半導体基板、８・・・・第１アルミ配線
［，９，１２０・・・・異物、ＩＩ・・・・スルーホー
ル、１２・・・・第２アルミ配線層、ｌＯｌ・・・・二
酸化炭素ボンベ、１０２・・・・圧力温度制御機構、１
０３．２００・・・・ベッセル、１０４・・・・物品、
１０５．２０１・・・・超臨界二酸化炭素ガス。
代理人の氏名 弁理士 粟野重孝 ばか１名第
図
第
図
第
第
図
図
／
ノＰ型千尊体基救FIG. 1 is a process cross-sectional view showing a method for manufacturing a semiconductor device according to an embodiment of the present invention, FIG. 2 is a cross-sectional view showing how foreign matter is removed from a semiconductor substrate in an embodiment of the present invention, and FIG. FIG. 1 is a partially enlarged cross-sectional view of a foreign matter removing device according to an embodiment of the present invention. 1...p-type semiconductor substrate, 8...first aluminum wiring [,9,120...foreign matter, II...through hole, 12...second aluminum wiring layer, lOl ... Carbon dioxide cylinder, 102 ... Pressure temperature control mechanism, 1
03.200...Vessel, 104...Goods,
105.201...Supercritical carbon dioxide gas. Name of agent: Patent attorney Shigetaka Awano Idiot 1 person / NoP type Senson body Kisaku
Claims (4)
、半導体装置の製造工程において発生した異物を前記半
導体基板上から除去することを特徴とする半導体装置の
製造方法。(1) A method for manufacturing a semiconductor device, which comprises bringing a semiconductor substrate into contact with liquefied gas or supercritical gas to remove foreign matter generated during the semiconductor device manufacturing process from the semiconductor substrate.
物を除去することを特徴とする特許請求の範囲第１項記
載の半導体装置の製造方法。(2) The method for manufacturing a semiconductor device according to claim 1, characterized in that foreign matter generated during the etching process of the metal wiring layer is removed.
グ工程において発生した異物を除去することを特徴とす
る特許請求の範囲第１項記載の半導体装置の製造方法。(3) A method for manufacturing a semiconductor device according to claim 1, characterized in that foreign matter generated during the etching process of a contact hole connecting metal wiring layers is removed.
を前記液化ガス又は超臨界ガスと接触させる機構を備え
た異物除去装置。(4) A foreign matter removal device comprising a mechanism for generating liquefied gas or supercritical gas and a mechanism for bringing an article into contact with the liquefied gas or supercritical gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3055289A JPH02209729A (en) | 1989-02-09 | 1989-02-09 | Manufacture of semiconductor device and apparatus for removing foreign substance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3055289A JPH02209729A (en) | 1989-02-09 | 1989-02-09 | Manufacture of semiconductor device and apparatus for removing foreign substance |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02209729A true JPH02209729A (en) | 1990-08-21 |
Family
ID=12306960
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3055289A Pending JPH02209729A (en) | 1989-02-09 | 1989-02-09 | Manufacture of semiconductor device and apparatus for removing foreign substance |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02209729A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1192990A (en) * | 1997-09-16 | 1999-04-06 | Ebara Corp | Plating pretreatment |
| WO2001082368A2 (en) * | 2000-04-25 | 2001-11-01 | Tokyo Electron Limited | Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module |
| WO2002016673A1 (en) * | 2000-08-24 | 2002-02-28 | Hideo Yoshida | Electrochemical treating method such as electroplating and electrochemical reaction device therefor |
| JP2003513466A (en) * | 1999-11-02 | 2003-04-08 | 東京エレクトロン株式会社 | Method and apparatus for supercritical processing multiple workpieces |
| JP2004228526A (en) * | 2003-01-27 | 2004-08-12 | Tokyo Electron Ltd | Method of processing substrate and method of manufacturing semiconductor device |
| WO2004081255A1 (en) * | 2003-01-27 | 2004-09-23 | Tokyo Electron Limited | Semiconductor device |
| US7220714B2 (en) | 2002-05-23 | 2007-05-22 | Air Products And Chemicals, Inc. | Process and composition for removing residues from the microstructure of an object |
-
1989
- 1989-02-09 JP JP3055289A patent/JPH02209729A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1192990A (en) * | 1997-09-16 | 1999-04-06 | Ebara Corp | Plating pretreatment |
| JP2003513466A (en) * | 1999-11-02 | 2003-04-08 | 東京エレクトロン株式会社 | Method and apparatus for supercritical processing multiple workpieces |
| WO2001082368A2 (en) * | 2000-04-25 | 2001-11-01 | Tokyo Electron Limited | Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module |
| WO2001082368A3 (en) * | 2000-04-25 | 2002-05-16 | Tokyo Electron Ltd | Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module |
| WO2002016673A1 (en) * | 2000-08-24 | 2002-02-28 | Hideo Yoshida | Electrochemical treating method such as electroplating and electrochemical reaction device therefor |
| US6793793B2 (en) | 2000-08-24 | 2004-09-21 | Hideo Yoshida | Electrochemical treating method such as electroplating and electrochemical reaction device therefor |
| US7220714B2 (en) | 2002-05-23 | 2007-05-22 | Air Products And Chemicals, Inc. | Process and composition for removing residues from the microstructure of an object |
| JP2004228526A (en) * | 2003-01-27 | 2004-08-12 | Tokyo Electron Ltd | Method of processing substrate and method of manufacturing semiconductor device |
| WO2004081255A1 (en) * | 2003-01-27 | 2004-09-23 | Tokyo Electron Limited | Semiconductor device |
| WO2004095557A1 (en) * | 2003-01-27 | 2004-11-04 | Tokyo Electron Limited | Semiconductor device |
| US7476619B2 (en) | 2003-01-27 | 2009-01-13 | Tokyo Electron Limited | Semiconductor device |
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