JPH0219968B2 - - Google Patents

Info

Publication number
JPH0219968B2
JPH0219968B2 JP19890381A JP19890381A JPH0219968B2 JP H0219968 B2 JPH0219968 B2 JP H0219968B2 JP 19890381 A JP19890381 A JP 19890381A JP 19890381 A JP19890381 A JP 19890381A JP H0219968 B2 JPH0219968 B2 JP H0219968B2
Authority
JP
Japan
Prior art keywords
etching
gas
plasma
ions
radicals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP19890381A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58100431A (ja
Inventor
Shuzo Fujimura
Naomichi Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP19890381A priority Critical patent/JPS58100431A/ja
Publication of JPS58100431A publication Critical patent/JPS58100431A/ja
Publication of JPH0219968B2 publication Critical patent/JPH0219968B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP19890381A 1981-12-10 1981-12-10 プラズマ・エツチング方法及びその装置 Granted JPS58100431A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19890381A JPS58100431A (ja) 1981-12-10 1981-12-10 プラズマ・エツチング方法及びその装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19890381A JPS58100431A (ja) 1981-12-10 1981-12-10 プラズマ・エツチング方法及びその装置

Publications (2)

Publication Number Publication Date
JPS58100431A JPS58100431A (ja) 1983-06-15
JPH0219968B2 true JPH0219968B2 (cs) 1990-05-07

Family

ID=16398855

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19890381A Granted JPS58100431A (ja) 1981-12-10 1981-12-10 プラズマ・エツチング方法及びその装置

Country Status (1)

Country Link
JP (1) JPS58100431A (cs)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63284819A (ja) * 1987-05-18 1988-11-22 Hitachi Ltd プラズマ処理装置
JPS6423536A (en) * 1987-07-20 1989-01-26 Hitachi Ltd Sputter-etching device
JPH05144773A (ja) * 1991-11-19 1993-06-11 Sumitomo Metal Ind Ltd プラズマエツチング装置
KR100428813B1 (ko) * 2001-09-18 2004-04-29 주성엔지니어링(주) 플라즈마 발생장치 및 이를 이용한 ＳｉＯ₂박막 식각방법

Also Published As

Publication number Publication date
JPS58100431A (ja) 1983-06-15

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