JPH02198181A - Manufacture of thermoelectric element - Google Patents
Manufacture of thermoelectric elementInfo
- Publication number
- JPH02198181A JPH02198181A JP1017963A JP1796389A JPH02198181A JP H02198181 A JPH02198181 A JP H02198181A JP 1017963 A JP1017963 A JP 1017963A JP 1796389 A JP1796389 A JP 1796389A JP H02198181 A JPH02198181 A JP H02198181A
- Authority
- JP
- Japan
- Prior art keywords
- film
- type semiconductor
- thermoelectric element
- mask
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 52
- 239000002184 metal Substances 0.000 claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 230000001360 synchronised effect Effects 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000009751 slip forming Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 230000005679 Peltier effect Effects 0.000 description 1
- 230000005678 Seebeck effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はペルチェ効果を利用し、電気的に冷房もしくは
暖房を行う空調装置、もしくはゼーベック効果により温
度差を用いて発電を行う発電装置等に有用な熱電素子の
製造方法に関する。[Detailed Description of the Invention] Industrial Application Field The present invention is useful for air conditioners that electrically cool or heat air using the Peltier effect, or power generation devices that generate electricity using temperature differences due to the Seebeck effect. The present invention relates to a method of manufacturing a thermoelectric element.
、従来の技術
従来、熱を電気に変換し、もしくは電気を熱に変換する
熱電素子は、第４図に示す従来例の様に金属板ｌ、及び
金属板２によってＮ型半導体３、もしくはＰ型の半導体
４を挟み込む構成を有し、両側の金属板ｌ、２の温度差
により発電を行い、もしくは金属板１．２に電流を通ず
ることにより冷却を行うものである。すなオ〕ち、冷却
を行う場合は、Ｎ型の半導体３とＰ型の半導体４を交互
に直列的に配列した熱電素子であり、端子５と端子６間
に電位を与えると、金属板の一方が冷却され、他方が加
熱されるものである。, Prior Art Conventionally, a thermoelectric element that converts heat into electricity or electricity into heat has been used to convert N-type semiconductor 3 or P It has a configuration in which a type of semiconductor 4 is sandwiched between the metal plates 1 and 2, and generates electricity by the temperature difference between the metal plates 1 and 2 on both sides, or cools the metal plates 1 and 2 by passing an electric current through them. In other words, when performing cooling, a thermoelectric element is used in which N-type semiconductors 3 and P-type semiconductors 4 are arranged alternately in series, and when a potential is applied between terminals 5 and 6, a metal plate One side is cooled and the other side is heated.
このような熱雷素子の製造方法は以下のように行なわれ
ている。まず、半導体の製造は、２種類または３種類の
金属または半金属に、Ｐ型およびＮ型を形成するドープ
元素を混入し、焼結成形することにより得られている。A method of manufacturing such a thermal lightning element is carried out as follows. First, semiconductors are manufactured by mixing two or three types of metals or semimetals with doping elements that form P-type and N-type, and sintering the mixture.
このようにして得られた半導体の両面に、金属板をろう
付けすることによって素子形成がなされている。Elements are formed by brazing metal plates on both sides of the semiconductor thus obtained.
発明が解決しようとする課題
しかしながら、このような従来の熱電素子では、半導体
材料および金属板をバルクで使用する構成となっている
ため、
１、 Ｔｅ、Ｂｉ等の希少材料を大量に必要とし、熱電
素子の重量および容積が大きくなり、材料コストがあが
る、
２、半導体の断面積が大きいため、加熱部から冷却部へ
の熱流が大きく、効率が低下する、３、熱電素子材料を
焼結後、金属をろう付けすることから、生産性が低くコ
ストの低減が困難である、
等の問題があった。Problems to be Solved by the Invention However, such conventional thermoelectric elements have a structure that uses semiconductor materials and metal plates in bulk, so 1. They require large amounts of rare materials such as Te and Bi; The weight and volume of the thermoelectric element increases, increasing the material cost. 2. Because the cross-sectional area of the semiconductor is large, the heat flow from the heating part to the cooling part is large, reducing efficiency. 3. After sintering the thermoelectric element material , since metals are brazed, productivity is low and it is difficult to reduce costs.
本発明は、上記従来技術の課題を考慮し、熱電素子の材
料コスト、重量および容積を低減するとともに、連続工
程により生産コストの低減を可能にし、あわせて、接触
抵抗および半導体内の熱流を抑えることにより、熱電性
能を向上させろことの出来る熱電素子の製造方法を提供
することを目的とするものである。The present invention takes into account the problems of the prior art described above, and reduces the material cost, weight, and volume of thermoelectric elements, and also makes it possible to reduce production costs by using a continuous process, and at the same time, suppresses contact resistance and heat flow within the semiconductor. Therefore, it is an object of the present invention to provide a method for manufacturing a thermoelectric element that can improve thermoelectric performance.
課題を解決するための手段
本発明による熱電素子の製造方法は、長尺絶縁フィルム
を走行させ、ドープ元素の量を変化させることによりＰ
型半導体とＮ型半導体を交互に成膜し、その後、前記フ
ィルムの走行速度と同一速度でマスクを走行させて金属
膜を成膜するものである。Means for Solving the Problems The method for manufacturing a thermoelectric element according to the present invention runs a long insulating film and changes the amount of doping elements to
A type semiconductor and an N-type semiconductor are alternately formed into films, and then a metal film is formed by running a mask at the same speed as the film running speed.
作用
り記のような手段によって、得られる本発明の作用は次
の通りである。The effects of the present invention obtained by the means described in the operation description are as follows.
１、膜状になった熱電素子は、薄く構成することが可能
でありコンパクトで軽い素子とすることができる。また
、材料の使用量は、バルクで使用する場合に比べ大幅に
低減できる。1. Film-shaped thermoelectric elements can be constructed thinly and can be made into compact and lightweight elements. Furthermore, the amount of material used can be significantly reduced compared to when used in bulk.
２、半導体の断面積が小さいことから、加熱部から冷却
部への熱流が抑えられる。2. Since the cross-sectional area of the semiconductor is small, heat flow from the heating section to the cooling section is suppressed.
３、 Ｐ型半導体およびＮ型半導体が連続して形成さ
れ、かつ、その後金属膜も連続して形成されることから
、大面積の生産が容易であり°、生産コストが大幅に低
減される。3. Since the P-type semiconductor and the N-type semiconductor are successively formed, and the metal film is also subsequently formed successively, it is easy to produce a large area, and the production cost is significantly reduced.
実施例 以下に本発明による実施例を図面により説明する。Example Embodiments according to the present invention will be described below with reference to the drawings.
第１図は本発明による一実施例であり、熱電素子の製造
方法の概略図を示すものである。FIG. 1 is an embodiment of the present invention, and shows a schematic diagram of a method for manufacturing a thermoelectric element.
巻出しロール２０を出た長尺絶縁フィルム２１は、キャ
ン２２の表面に沿って走行する。キャン２２の下部では
、坩堝２３から蒸発した複数の半導体元素が成膜されろ
。このときＮ型半導体およびＰ型半導体を形成するため
、坩堝２４よりドープ元素も蒸着させている。坩堝２４
のドープ元素は、制御系２５によりフィルム２１の走行
速度と同期した円形シャッター２６により成膜、非成膜
が繰り返される。これによりフィルム２１の表面にはＰ
型半導体とＮ型半導体が交互に成膜される。The long insulating film 21 that has come out of the unwinding roll 20 runs along the surface of the can 22 . At the bottom of the can 22, a plurality of semiconductor elements evaporated from the crucible 23 are formed into a film. At this time, a doping element is also deposited from the crucible 24 in order to form an N-type semiconductor and a P-type semiconductor. Crucible 24
The doping element is repeatedly formed and not formed into a film by a circular shutter 26 synchronized with the traveling speed of the film 21 by a control system 25. As a result, the surface of the film 21 has P
A type semiconductor and an N type semiconductor are alternately deposited.
なお、各半導体の長さは、円形シャター２６の回転数と
固定マスク２７のフィルム走行方向の長さを変えろこと
によって決められる。半導体が成膜された後、そのフィ
ルム２１はキャン２８に沿って走行する。キャン２８の
下部には坩堝２９が設置されており、蒸発金属が前記半
導体面に蒸着される。坩堝２９とキャン２８の間には、
固定マスク３０と移動マスク３１が設置されている。移
動マスク３１は制御系２５によりフィルム２１の走行速
度と一致して同一方向に回転する。The length of each semiconductor is determined by changing the rotation speed of the circular shutter 26 and the length of the fixed mask 27 in the film running direction. After the semiconductor is deposited, the film 21 runs along the can 28. A crucible 29 is installed at the bottom of the can 28, and evaporated metal is deposited on the semiconductor surface. Between crucible 29 and can 28,
A fixed mask 30 and a moving mask 31 are installed. The moving mask 31 is rotated by the control system 25 in the same direction as the traveling speed of the film 21 .
その移動マスク３１の形状を第２図に示す。走行マスク
３１には等間隔でスリット３２が並んでおり、前記蒸着
金属はスリット３２と同一形状で成膜される。金属成膜
後、フィルム２１は巻取りロール３３に巻取られる。The shape of the moving mask 31 is shown in FIG. Slits 32 are lined up at equal intervals in the traveling mask 31, and the vapor-deposited metal is formed in the same shape as the slits 32. After the metal film is formed, the film 21 is wound onto a winding roll 33.
本実施例では、移動マスク３１の走行安定確保と成膜精
度の向上のために、２つの改良も加えている。固定マス
ク３０の幅は、移動マスク３１のスリット３２の幅より
も小さくなっており、移動マスク３１の両端部には蒸着
金属が付着しないようになっている。また、移動マスク
３１の駆動ローラー３４と移動マスク３１は両端部のみ
で駆動を伝える構造になっており、これにより、移動マ
スク３１の安定走行を確保している。また、加熱ランプ
３５により、移動マスク３１に付着した金属を再蒸発さ
せ、マスク精度の確保を行なっている。In this embodiment, two improvements have been made in order to ensure stable running of the moving mask 31 and improve film forming accuracy. The width of the fixed mask 30 is smaller than the width of the slit 32 of the movable mask 31, so that the deposited metal does not adhere to both ends of the movable mask 31. Further, the drive roller 34 of the movable mask 31 and the movable mask 31 have a structure in which drive is transmitted only at both ends, thereby ensuring stable running of the movable mask 31. Further, the metal attached to the moving mask 31 is reevaporated by the heating lamp 35 to ensure mask accuracy.
なお、本実施例では、半導体のドープ元素を１つとした
が、複数個であっても同様な効果が得られる。また、実
施例は真空蒸着法を用いて示したが、イオンブレーティ
ングやクラスターイオンビーム法等にも同様に対応でき
る。In this embodiment, the semiconductor is doped with one element, but the same effect can be obtained even with a plurality of elements. Furthermore, although the embodiments have been shown using a vacuum evaporation method, ion blating, cluster ion beam methods, etc. can be used in the same manner.
以上の本発明の製造方法によって得られる熱電素子の一
実施例を第３図に示す。An example of a thermoelectric element obtained by the above manufacturing method of the present invention is shown in FIG.
フィルム２１には、坩堝２３および２４から蒸着された
Ｐ型半導体３６とＮ型半導体３７が交互に等間隔で並ん
でいる。その上方には、Ｐ型半導体３６とＮ型半導体３
７を電気的につなぐ金属膜３８が形成される。金属膜３
８は、移動マスク３１と同一形状に成膜されている。On the film 21, P-type semiconductors 36 and N-type semiconductors 37 deposited from the crucibles 23 and 24 are arranged alternately at equal intervals. Above it, a P-type semiconductor 36 and an N-type semiconductor 3
A metal film 38 that electrically connects 7 is formed. metal film 3
8 is formed into a film having the same shape as the moving mask 31.
このような熱電素子の両端面に電位を加えた場合、各半
導体３６．３７と金属膜３８との界面において吸熱また
は発熱が生じ、各金属膜３８は交互に吸熱部または発熱
部を生じる。したがって、この素子を、金属膜３８を凹
部凸部とするコルゲート状に加工することにより、従来
と同様に使用することができる。この構成では、Ｐ型半
導体３７とＮ型半導体３８が接する構造としているが、
−船釣に半導体の抵抗は金属よりもかなり大きいことか
ら、Ｐ型半導体３７とＮ型半導体３８の界面を流れる電
流はわずかであり、性能の低下はほとんどない。また、
本発明の製造方法では、Ｐ型半導体３６とＮ型半導体３
７へのドープ元素の変化を、固定マスク２７の長さと円
形シャッター２６の回転により行なっていることから、
半導体３６と３７の界面におけるドープ元素の変化は急
峻にはならず、ある長さにわたってなだらかに変化する
。しかしながら、この点についても上記理由により性能
への影響はない。When a potential is applied to both end faces of such a thermoelectric element, heat absorption or heat generation occurs at the interface between each semiconductor 36, 37 and the metal film 38, and each metal film 38 alternately produces a heat absorption portion or a heat generation portion. Therefore, this element can be used in the same manner as before by processing the metal film 38 into a corrugated shape with concave and convex portions. In this configuration, the P-type semiconductor 37 and the N-type semiconductor 38 are in contact with each other.
- Since the resistance of semiconductors for boat fishing is considerably greater than that of metals, the current flowing through the interface between the P-type semiconductor 37 and the N-type semiconductor 38 is small, and there is almost no deterioration in performance. Also,
In the manufacturing method of the present invention, the P-type semiconductor 36 and the N-type semiconductor 3
Since the doping element to 7 is changed by the length of the fixed mask 27 and the rotation of the circular shutter 26,
The change in the doping element at the interface between the semiconductors 36 and 37 is not steep, but changes gradually over a certain length. However, this point also has no effect on performance for the reasons mentioned above.
以上のように本発明においては、フィルムの表面に成膜
しているため、薄く構成することが可能でありコンパク
トで軽い素子とすることができる。As described above, in the present invention, since the film is formed on the surface of the film, it is possible to have a thin structure, and a compact and light element can be obtained.
また、連続成膜により、大面積化も容易で安価な熱電素
子が提供される。In addition, continuous film formation provides an inexpensive thermoelectric element that can be easily made into a large area.
発明の効果
本発明によろ熱電素子の製造方法は、長尺絶縁フィルム
を走行させ、ドープ元素の量を変化させろことによりＰ
型半導体とＮ型半導体を交互に成膜し、その後、前記フ
ィルムの走行速度と同一速度でマスクを走行させて金属
膜を成膜することにより、次の効果を生ずる。Effects of the Invention The method for manufacturing a thermoelectric element according to the present invention includes running a long insulating film and changing the amount of doping elements.
The following effects are produced by alternately depositing a type semiconductor and an N-type semiconductor, and then depositing a metal film by running a mask at the same speed as the film.
１、膜状になった熱電素子は、薄く構成することが可能
でありコンパクトで軽い装置とすることができる。また
、材料の使用量は、バルクで使用する場合に比べ非常に
少なくできろ。1. A thermoelectric element in the form of a film can be constructed thinly, resulting in a compact and lightweight device. Additionally, the amount of material used can be significantly reduced compared to when used in bulk.
２、半導体の断面積が小さいことから、加熱部から冷却
部への熱伝導を減少できる。2. Since the cross-sectional area of the semiconductor is small, heat conduction from the heating part to the cooling part can be reduced.
３、 Ｐ型半導体およびＮ型半導体が連続して形成さ
れ、かつ、その後金属膜も連続して形成されることから
、連続して大面積の生産が可能となり、生産コストが大
幅に低減される。3. Since P-type semiconductors and N-type semiconductors are formed successively, and then the metal film is also formed successively, it becomes possible to continuously produce large areas, and production costs are significantly reduced. .
このように、本発明を実施することで、非常に軽量、コ
ンパクトでコストも低く、しかも性能の高い熱電素子の
実現が可能となる。As described above, by carrying out the present invention, it is possible to realize a thermoelectric element that is extremely lightweight, compact, low cost, and has high performance.
第１図は本発明の一実施例の熱電素子の製造方法を説明
するための製造装置の概略斜視図、第２図は同実施例に
おける移動マスクの一実施例を示す斜視図、第３図は本
発明の製造方法によって作製された熱電素子の一実施例
の構造を示す斜視図、第４図は従来の熱電素子の構成を
示す斜視図である。
２２ 、２８・・・キャン、３１・・・移動マスク、２
６・・・円形シャッター ３．４．３６．３７・・・半
導体、２１・・・フィルム、３８・・・金属膜。
代理人の氏名 弁理士 粟野重孝はか１名嶋
■
瘍
図
３８４ｔＪＬ暎
第
区
３Ｎ型半導体
乙端子FIG. 1 is a schematic perspective view of a manufacturing apparatus for explaining a method for manufacturing a thermoelectric element according to an embodiment of the present invention, FIG. 2 is a perspective view showing an embodiment of a moving mask in the same embodiment, and FIG. 4 is a perspective view showing the structure of an embodiment of a thermoelectric element manufactured by the manufacturing method of the present invention, and FIG. 4 is a perspective view showing the structure of a conventional thermoelectric element. 22, 28... Can, 31... Moving mask, 2
6...Circular shutter 3.4.36.37...Semiconductor, 21...Film, 38...Metal film. Name of agent: Patent attorney Shigetaka Awano Hakaichi Nashima
Claims (5)
変化させることによりＰ型半導体とＮ型半導体を走行方
向に交互に成膜することを特徴とする熱電素子の製造方
法。(1) A method for manufacturing a thermoelectric element, which comprises running a long insulating film and changing the amount of doping elements to alternately form P-type semiconductors and N-type semiconductors in the running direction.
ッターを、前記フィルム走行と同期させることを特徴と
する請求項１記載の熱電素子の製造方法。(2) The method for manufacturing a thermoelectric element according to claim 1, characterized in that a shutter attached to an upper part of the doping element supply source is synchronized with the film running.
せて金属膜を成膜することを特徴とする請求項１記載の
熱電素子の製造方法。(3) The method for manufacturing a thermoelectric element according to claim 1, characterized in that the metal film is formed by running the mask at the same speed as the film running speed.
求項３記載の熱電素子の製造方法。(4) The method for manufacturing a thermoelectric element according to claim 3, wherein the mask is formed into a belt shape.
請求項３又は４記載の熱電素子の製造方法。(5) The method for manufacturing a thermoelectric element according to claim 3 or 4, further comprising means for heating the mask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1017963A JPH02198181A (en) | 1989-01-27 | 1989-01-27 | Manufacture of thermoelectric element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1017963A JPH02198181A (en) | 1989-01-27 | 1989-01-27 | Manufacture of thermoelectric element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02198181A true JPH02198181A (en) | 1990-08-06 |
Family
ID=11958398
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1017963A Pending JPH02198181A (en) | 1989-01-27 | 1989-01-27 | Manufacture of thermoelectric element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02198181A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009045862A2 (en) * | 2007-09-28 | 2009-04-09 | Battelle Memorial Institute | Thermoelectric devices |
| US7834263B2 (en) | 2003-12-02 | 2010-11-16 | Battelle Memorial Institute | Thermoelectric power source utilizing ambient energy harvesting for remote sensing and transmitting |
| US7851691B2 (en) | 2003-12-02 | 2010-12-14 | Battelle Memorial Institute | Thermoelectric devices and applications for the same |
| US8455751B2 (en) | 2003-12-02 | 2013-06-04 | Battelle Memorial Institute | Thermoelectric devices and applications for the same |
| US9281461B2 (en) | 2003-12-02 | 2016-03-08 | Battelle Memorial Institute | Thermoelectric devices and applications for the same |
-
1989
- 1989-01-27 JP JP1017963A patent/JPH02198181A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7834263B2 (en) | 2003-12-02 | 2010-11-16 | Battelle Memorial Institute | Thermoelectric power source utilizing ambient energy harvesting for remote sensing and transmitting |
| US7851691B2 (en) | 2003-12-02 | 2010-12-14 | Battelle Memorial Institute | Thermoelectric devices and applications for the same |
| US8455751B2 (en) | 2003-12-02 | 2013-06-04 | Battelle Memorial Institute | Thermoelectric devices and applications for the same |
| US9281461B2 (en) | 2003-12-02 | 2016-03-08 | Battelle Memorial Institute | Thermoelectric devices and applications for the same |
| WO2009045862A2 (en) * | 2007-09-28 | 2009-04-09 | Battelle Memorial Institute | Thermoelectric devices |
| WO2009045862A3 (en) * | 2007-09-28 | 2009-11-05 | Battelle Memorial Institute | Thermoelectric devices |
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