JPH02196084A - Method for holding seed crystal for single crystal pulling device - Google Patents
Method for holding seed crystal for single crystal pulling deviceInfo
- Publication number
- JPH02196084A JPH02196084A JP1185389A JP1185389A JPH02196084A JP H02196084 A JPH02196084 A JP H02196084A JP 1185389 A JP1185389 A JP 1185389A JP 1185389 A JP1185389 A JP 1185389A JP H02196084 A JPH02196084 A JP H02196084A
- Authority
- JP
- Japan
- Prior art keywords
- seed crystal
- crystal
- holding
- pulling device
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 102
- 238000000034 method Methods 0.000 title claims description 14
- 239000000155 melt Substances 0.000 claims description 5
- 238000005336 cracking Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 4
- XJUNRGGMKUAPAP-UHFFFAOYSA-N dioxido(dioxo)molybdenum;lead(2+) Chemical compound [Pb+2].[O-][Mo]([O-])(=O)=O XJUNRGGMKUAPAP-UHFFFAOYSA-N 0.000 description 3
- 241001391944 Commicarpus scandens Species 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
この発明は、単結晶引上装置用種結晶の保持方法に関し
、特に、融液中から種結晶を用いて単結晶を引上げる、
いわゆるチョクラルスキー法（ＣＺ法）において、種結
晶を保持するための単結晶引上装置用種結晶の保持方法
に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for holding a seed crystal for a single crystal pulling device, and in particular, a method for pulling a single crystal from a melt using a seed crystal.
The present invention relates to a seed crystal holding method for a single crystal pulling apparatus for holding a seed crystal in the so-called Czochralski method (CZ method).
［従来の技術］
第２図は例えば実公昭６０−３４０２８号公報に示され
た従来の単結晶引上装置用種結晶保持具であり、図にお
いて、種結晶保持具本体（１）は、胴部（１ａ）と脚部
（１ｂ）からなっている０種結晶（２）には種結晶を削
って凹部（２ａ）が設けられている０脚部（１ｂ）には
、凸部（３）および凹部（４）が形成されている。[Prior Art] Fig. 2 shows a conventional seed crystal holder for a single crystal pulling device, as shown in, for example, Japanese Utility Model Publication No. 60-34028. The 0 seed crystal (2), which consists of a part (1a) and a leg part (1b), has a concave part (2a) by cutting the seed crystal.The 0 leg part (1b) has a convex part (3). and a recess (4) are formed.
種結晶保持具本体（１）に固定された支持棒（５）はア
ルミナパイプでなる引上軸（６）とアルミナセメント（
７）等で固定されている。The support rod (5) fixed to the seed crystal holder main body (1) has a pulling shaft (6) made of an alumina pipe and an alumina cement (
7) etc. are fixed.
第３図は、さらに−最的な従来の種結晶保持方法を示し
、図において、種結晶保持具本体（１）に保持される種
結晶（２）に種結晶を削って凹部（２ａ）が設けられて
おり、ワイヤ（８）により種結晶（２）と種結晶保持具
本体（１）とを縛って種結晶（２）を保持している。FIG. 3 shows the most conventional method of holding a seed crystal, and in the figure, a recess (2a) is formed by cutting the seed crystal into the seed crystal (2) held in the seed crystal holder body (1). The seed crystal (2) and the seed crystal holder main body (1) are tied together by a wire (8) to hold the seed crystal (2).
融液からチョクラルスキー法により単結晶を育成する場
合、種結晶保持具本体（１）に種結晶（２）を固定し、
この保持具本体（１）を単結晶引上装置の引上軸（６）
に固定し、融液の温度を調整しつつ引上装置により引上
軸（８）を介して種結晶（２〉を回転させながら種結晶
（２）の先端を融液（図示せず）に浸し、そして引上装
置により種結晶（２）を所定の速度で引上げて種結晶（
２）の先端に目標とする単結晶を成長させる。この際、
種結晶保持具本体（１）には単に種結晶（２）の保持固
定ができる構造であることのみならず、結晶成長ととも
に増大する結晶重量に対して耐えることが要求される。When growing a single crystal from a melt by the Czochralski method, fix the seed crystal (2) to the seed crystal holder body (1),
This holder body (1) is connected to the pulling shaft (6) of the single crystal pulling device.
While adjusting the temperature of the melt, the tip of the seed crystal (2) is brought into the melt (not shown) while rotating the seed crystal (2〉) via the pulling shaft (8) using a pulling device. Then, the seed crystal (2) is pulled up at a predetermined speed using a pulling device to remove the seed crystal (2).
2) Grow the target single crystal at the tip. On this occasion,
The seed crystal holder main body (1) is required not only to have a structure capable of simply holding and fixing the seed crystal (2), but also to withstand the weight of the crystal, which increases as the crystal grows.
［発明が解決しようとする課題］
従来、このチョクラルスキー法により、単結晶を引上げ
る際の種結晶の保持方法としては、種々のものが考えら
れている。一般に、シリコン結晶、Ｇ ａ Ａ ｓ結晶
、ＧＧＧ結晶等を育成する場合、育成される結晶が大口
径化、長尺化し、重量が大きくなっても、これら単結晶
は材質的に丈夫なため、種結晶にかなり深い凹部を設け
、ひっかかりをもたせて、保持する方法をとったとして
も、種結晶が取付は部で割れたりすることはない。しか
し、モリブデン酸鉛単結晶、二酸化テルル単結晶、ＢＧ
Ｏ（Ｂｉｓｍｕｔｈ−Ｇｅｒａ＋ａｎｉｕｍ−Ｏｘｉ
ｄｅ）単結晶等は材質的に割れやすいため、従来のよう
に、５１０程度の種結晶を用い、これに深い四部を設け
、ひっかかりをつけ、種結晶を保持した場合、育成がす
すんで結晶の重量が大きくなると、回転中の結晶のぶれ
や外部からの振動等により取付は部で種結晶が割れたり
する０割れをなくすため凹を浅くすると種結晶がずり落
ちることがあった。[Problems to be Solved by the Invention] Conventionally, various methods have been considered for holding a seed crystal when pulling a single crystal using the Czochralski method. Generally, when growing silicon crystals, GaAs crystals, GGG crystals, etc., even if the grown crystals become larger in diameter, longer, and heavier, these single crystals are durable due to their material properties. Even if a fairly deep recess is provided in the seed crystal and a hook is used to hold it, the seed crystal will not crack at the attachment point. However, lead molybdate single crystal, tellurium dioxide single crystal, BG
O(Bismuth-Gera+anium-Oxi
de) Since single crystals are easy to break due to their material, if you use a seed crystal of about 510mm as in the past, provide deep four parts to it, hook it, and hold the seed crystal, the growth will proceed and the crystal will grow. When the weight increases, the seed crystal may slip off if the concave is made shallow to eliminate zero cracking, where the seed crystal cracks at the mounting point due to shaking of the crystal during rotation or vibration from the outside.
この発明は上記のような問題点を解消するためになされ
たもので、種結晶に凹部を設けることなく単結晶引上軸
に固定できるとともに、育成される結晶が大口径化、長
尺化して重量が大きくなっても、種結晶が取付は部で割
れたり、ずり落ちることのない単結晶引上装置用種結晶
の保持方法を得ることを目的とする。This invention was made to solve the above-mentioned problems, and it is possible to fix the seed crystal to a single crystal pulling shaft without providing a recess, and it also allows the crystal to be grown to have a large diameter and a long length. To provide a method for holding a seed crystal for a single-crystal pulling device in which the seed crystal does not crack at the attachment point or fall off even when the weight increases.
［課題を解決するための手段］
この発明に係る単結晶引上装置用種結晶の保持方法は、
一端が他端より細くなった円筒状パイプの細い方を下に
して上部より、前記細い穴にひっかかるように加工した
種結晶を挿入して種結晶および成長する単結晶を保持す
るものである。[Means for Solving the Problems] A method for holding a seed crystal for a single crystal pulling device according to the present invention includes:
One end of a cylindrical pipe is thinner than the other, and a seed crystal machined from above is inserted into the thin hole so as to be caught in the thin hole to hold the seed crystal and the growing single crystal.
［作用］
この発明においては、一端（上部）を太く加工した種結
晶を、種結晶保持具である円筒状パイプの上部より挿入
し、下部の細い部分でひっかかる（保持する）ことを可
能にする。[Function] In this invention, a seed crystal whose one end (upper part) is made thicker is inserted from the upper part of the cylindrical pipe that is the seed crystal holder, and it is possible to be caught (held) by the thin part at the lower part. .
［実施例］
以下、この発明の一実施例を第１図を繋照して説明する
。[Embodiment] An embodiment of the present invention will be described below with reference to FIG.
図において、（１１）は種結晶保持具本体、（１２）は
この保持具本体（１１）の内径が細くなった下端部（ｌ
ｌａ）に保持された種結晶である０種結晶保持具本体（
１１）としては、例えば熱電対保護管のように一端が封
じられた円筒状パイプを利用する。封じられた側の先端
内径を上部他端の内径よりも細くなるように、がっ従来
の種結晶が通る太さに切断する０次に種結晶（１２）の
下部は前記、切断により下端部（ｌｌａ）に生じた穴を
通ることが必要であるが、他端（１２ｍ）は前記穴でひ
っかがるように太く加工する。In the figure, (11) is the seed crystal holder main body, and (12) is the lower end (l
0 seed crystal holder main body (la) which is a seed crystal held in
As for 11), for example, a cylindrical pipe with one end sealed like a thermocouple protection tube is used. The lower end of the seed crystal (12) is cut so that the inner diameter of the tip on the sealed side is thinner than the inner diameter of the other end of the upper part. It is necessary to pass through the hole formed at (lla), but the other end (12 m) is processed to be thick so that it can be caught in the hole.
従って、種結晶（１２）の太い方、すなわち他端（１２
ｍ）を上にして、従来のように細い方を保持具本体（１
１）の上方の筒の穴へ通すと、種結晶上部の他端（１２
ａ）と保持具本体（１１）の下端部（Ｉｌａ）の細い穴
とでひっかかりが生じ、種結晶（１２）は保持具本体（
１１）に保持することができる。Therefore, the thicker end of the seed crystal (12), that is, the other end (12
m) on top, and place the thin end of the holder body (1
1) through the hole in the upper cylinder, the other end of the upper part of the seed crystal (12
a) and the narrow hole in the lower end (Ila) of the holder body (11), and the seed crystal (12) gets caught in the holder body (11).
11).
なお、上記実施例では種結晶保持具本体の材質としては
、熱電対保護管を用いたが、結晶引上時の高温下に耐え
れば、これにとられれず、白金、ステンレス、純ニッケ
ル等も使用することができる。In the above example, a thermocouple protection tube was used as the material for the main body of the seed crystal holder, but platinum, stainless steel, pure nickel, etc. may also be used as long as they can withstand the high temperatures during crystal pulling. can be used.
［発明の効果］
以上のように、この発明によれば、種結晶の整形は、一
端を他端より太くするだけで容易であり、保持具への装
着はさらに簡単で、上部よりひっかかるところまで落と
し込むだけである。そしてモリブデン酸鉛単結晶等割れ
やすい単結晶材料について種結晶に凹部を設けないため
、大口径化、長尺化した重量が大なる結晶を育成しても
、種結晶が割れたりずり落ちることはない。特に、モリ
ブデン酸鉛単結晶、二酸化テルル単結晶、ＢＧＯ単結晶
等の比較的低融点材料で材質的に割れやすい単結晶で、
しかも大口径化あるいは長尺化して育成される結晶の重
量が大きくなる場合に、その効果が顕著であり、かつ、
種結晶の整形および装着が容易である等、量産性を向上
する効果がある。[Effects of the Invention] As described above, according to the present invention, it is easy to shape the seed crystal by simply making one end thicker than the other, and it is even easier to attach it to the holder. Just drop it in. In addition, since there is no recess in the seed crystal for single crystal materials that are easily broken, such as lead molybdate single crystal, the seed crystal will not crack or fall off even if a large diameter, long, and heavy crystal is grown. . In particular, single crystals with relatively low melting points such as lead molybdate single crystals, tellurium dioxide single crystals, and BGO single crystals, which are easy to break,
Moreover, the effect is remarkable when the weight of the crystal grown by increasing the diameter or length increases, and
This has the effect of improving mass productivity, such as the ease of shaping and mounting of seed crystals.
第１図はこの発明の一実施例を説明するための縦断面図
、第２図および第３図はそれぞれ従来の種結晶保持方法
を説明するための縦断面図および斜視図である。
（１１）・・・種結晶保持具本体、（１２）・・・種結
晶。
なお、各図中、同一符号は同−又は相当部分を示す。
代理人 曽 我 道 照
１２：種ＦＭ＆FIG. 1 is a longitudinal sectional view for explaining one embodiment of the present invention, and FIGS. 2 and 3 are a longitudinal sectional view and a perspective view, respectively, for explaining a conventional seed crystal holding method. (11)... Seed crystal holder main body, (12)... Seed crystal. In each figure, the same reference numerals indicate the same or corresponding parts. Agent Teru So Ga Michi 12: Tane FM&
Claims (1)
軸に固定される種結晶の保持方法において、筒状の回転
軸をなす種結晶保持具本体の下部先端の内径が上部内径
より細くなっており、前記上部より前記種結晶を挿入し
細くなった前記下部先端の部分で前記種結晶を保持する
ことを特徴とする単結晶引上装置用種結晶の保持方法。In a method of holding a seed crystal in which the seed crystal is fixed to the pulling shaft of a device that uses a seed crystal to pull a single crystal from a melt, the inner diameter of the lower tip of the seed crystal holder body, which forms the cylindrical rotation shaft, is the upper inner diameter. A method for holding a seed crystal for a single-crystal pulling apparatus, characterized in that the seed crystal is inserted from the upper part, and the seed crystal is held at the thinner tip of the lower part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1185389A JPH02196084A (en) | 1989-01-23 | 1989-01-23 | Method for holding seed crystal for single crystal pulling device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1185389A JPH02196084A (en) | 1989-01-23 | 1989-01-23 | Method for holding seed crystal for single crystal pulling device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02196084A true JPH02196084A (en) | 1990-08-02 |
Family
ID=11789284
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1185389A Pending JPH02196084A (en) | 1989-01-23 | 1989-01-23 | Method for holding seed crystal for single crystal pulling device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02196084A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0497864U (en) * | 1991-01-10 | 1992-08-25 | ||
| CN107794565A (en) * | 2016-09-06 | 2018-03-13 | 上海新昇半导体科技有限公司 | Seedholder and czochralski crystal growing furnace |
-
1989
- 1989-01-23 JP JP1185389A patent/JPH02196084A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0497864U (en) * | 1991-01-10 | 1992-08-25 | ||
| CN107794565A (en) * | 2016-09-06 | 2018-03-13 | 上海新昇半导体科技有限公司 | Seedholder and czochralski crystal growing furnace |
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