JPH0219008A - Microwave transistor - Google Patents
Microwave transistorInfo
- Publication number
- JPH0219008A JPH0219008A JP16960588A JP16960588A JPH0219008A JP H0219008 A JPH0219008 A JP H0219008A JP 16960588 A JP16960588 A JP 16960588A JP 16960588 A JP16960588 A JP 16960588A JP H0219008 A JPH0219008 A JP H0219008A
- Authority
- JP
- Japan
- Prior art keywords
- fet
- matching circuit
- chip
- electrode
- input
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 13
- 238000010586 diagram Methods 0.000 description 13
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 10
- 239000000758 substrate Substances 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 101001051490 Homo sapiens Neural cell adhesion molecule L1 Proteins 0.000 description 2
- 102100024964 Neural cell adhesion molecule L1 Human genes 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- ZSDSQXJSNMTJDA-UHFFFAOYSA-N trifluralin Chemical compound CCCN(CCC)C1=C([N+]([O-])=O)C=C(C(F)(F)F)C=C1[N+]([O-])=O ZSDSQXJSNMTJDA-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Microwave Amplifiers (AREA)
- Amplifiers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
こノ発明に、マイクロ波帯で動作するトランジスタのチ
ップパターンに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a chip pattern of a transistor operating in a microwave band.
第４図は、従来のマイクロ波帯で動作するガリウム砒素
メタルセミコンダクタ電界効果トランジスタ（以下Ｇａ
Ａａ ＭＥＳ ＦＥＴと称す）チップのパターン図、第
５図は従来のＧｍＡ＠ＭＥＳ ＦＥＴを用いたマイクロ
波２段増幅器の一例を示すパターン図である（バイアス
回路パターンを省略しである）。Figure 4 shows a conventional gallium arsenide metal semiconductor field effect transistor (hereinafter referred to as Ga) that operates in the microwave band.
FIG. 5 is a pattern diagram showing an example of a microwave two-stage amplifier using a conventional GmA@MES FET (the bias circuit pattern is omitted).
図において、 ｆｉｌ ｔ！ ＧａＡ−半導体で構成さ
れるＧａＡｓＭＥＳＦＢＴチップ本体、（２１はゲート
電極、（３）はドレイン電極、（４１はソース電極、（
５）はソース電極（４）を裏面のアース電極に接続する
ためのスルーホール、（６）は入力整合回路、（７）は
段間の整合回路、（８）は出力整合回路、（９）に１段
目のＧｍＡｓ ＭＥＳ ＦＥＴのドレイン電極と２段目
のＧａＡｓ ＦＥＴのゲート電極の６各に印加されるバ
イアス電圧を分離するＤＣカットコンデンサ、＋１０１
Ｈ金ワイヤ、 （ＩｌｌはＧａＡｓ ＭＥＳ ＦＥＴ
本体ｔｌ＋及び入力整合回路（６）２段関整合回路（７
）、出力整合回路（８）を接地するための接地基板であ
る。In the figure, fil t! A GaAs MESFBT chip body composed of a GaA-semiconductor, (21 is a gate electrode, (3) is a drain electrode, (41 is a source electrode, (
5) is a through hole for connecting the source electrode (4) to the ground electrode on the back side, (6) is an input matching circuit, (7) is a matching circuit between stages, (8) is an output matching circuit, (9) A DC cut capacitor, +101, is used to separate the bias voltage applied to each of the drain electrode of the first-stage GmAs MES FET and the gate electrode of the second-stage GaAs FET.
H gold wire, (Ill is GaAs MES FET
Main body tl+ and input matching circuit (6) 2-stage matching circuit (7
), which is a grounding board for grounding the output matching circuit (8).
なお、入力整合回路（６）９段間整合回路（７）、出力
整合回路（８）ハアルミナセラミック基板等の誘電体基
板上に、金等の導体をパターニングしたものである。The input matching circuit (6), the nine-stage matching circuit (7), and the output matching circuit (8) are formed by patterning a conductor such as gold on a dielectric substrate such as a halumina ceramic substrate.
次に動作について説明する。Next, the operation will be explained.
第４図で示されるＧａＡｓ ＭＥＳ ＦＥＴチップ本体
ｆｉ＋では、ドレイン電極（３）とソース電極（４）と
の間に電流が流れ、ショットキバリア接合のゲート電極
（２）による空乏層て、この電流がコントロールされる
ので増幅作用が得られる。In the GaAs MES FET chip body fi+ shown in Fig. 4, a current flows between the drain electrode (3) and the source electrode (4), and this current flows through the depletion layer formed by the gate electrode (2) of the Schottky barrier junction. Since it is controlled, an amplification effect can be obtained.
ただし、ｑＩＪＡ図で示されるＧ５Ａ１ ＭＥＳ ＦＥ
Ｔでマイクロ波帯の増幅器を構成する場合、入力信号が
、ＧａＡ龜Ｍｇｓ ＦＥＴで反射されずに効率よく増幅
するためには整合回路が必要で、第５図に示すごとく入
力整合回路（６）１段間整合回路（７）、出力整合回路
＋８１ ｔｌ−設ける。However, G5A1 MES FE shown in the qIJA diagram
When configuring a microwave band amplifier using T, a matching circuit is required in order to efficiently amplify the input signal without being reflected by the GaA/Mgs FET, and as shown in Figure 5, an input matching circuit (6) is required. An inter-stage matching circuit (7) and an output matching circuit +81 tl- are provided.
〔発明が解決しようとするｌ！１６）
従来のマイクロ波帯で動作するＧａＡ魯ＭＥＳ ＦＥＴ
の利得は比較的小さいので、多くのＧｍＡｓ ＭＩＣ５
ＦＥＴを縦続接続して用いているが、各々のＧｍＡ＠Ｍ
ＥＳ ＦＥＴの入力部に整合回路が必要であるので、上
記増幅器の形状が大きくなるという欠点があった。また
、整合回路をパターニングした誘電体基板を多く用いる
ので、組立が複雑になり、かつ高価になるという問題点
があつ之。[What the invention attempts to solve! 16) GaA MES FET operating in conventional microwave band
Since the gain of MIC5 is relatively small, many GmAs MIC5
FETs are used in cascade connection, but each GmA@M
Since a matching circuit is required at the input section of the ES FET, there is a drawback that the size of the amplifier becomes large. Furthermore, since many dielectric substrates patterned with matching circuits are used, assembly becomes complicated and expensive.
この発明は、上記のような問題点を解消するためになさ
れたもので、小型で組立が容易、かつ安価なマイクロ波
増幅器全構成できるマイクロ波トランジスタ？得ること
を目的とする。This invention was made to solve the above-mentioned problems. It is a small, easy to assemble, and inexpensive microwave transistor that can be used to configure a complete microwave amplifier. The purpose is to obtain.
この発明に係るマイクロ波トランジスタハ、１つのチッ
プに２つのトランジスタが構成され、１つのトランジス
タの入力電極と他のトランジスタの出力電極がチップの
同じ片側に配置されたものである。The microwave transistor according to the present invention includes two transistors on one chip, and the input electrode of one transistor and the output electrode of the other transistor are arranged on the same side of the chip.
この発明におけるマイクロ波トランジスタでは、１つの
トランジスタの入力電極と別のトランジスタの出力電極
がチップの同じ片側に配置されているので、多段増幅器
の入出力整合回路及び段間の整合回路が２つの基板で構
成できる。In the microwave transistor according to the present invention, the input electrode of one transistor and the output electrode of another transistor are arranged on the same side of the chip, so that the input/output matching circuit of the multistage amplifier and the matching circuit between stages are formed on two substrates. It can be composed of
以下、この発明の一実施例全図について説明する。第１
図はマイクロ波帯で動作するＧａＡａ ＭＥＳＦＥＴチ
ップのパターン図、１ｆＪ２図は９Ｊ１図のＧａＡ ａ
ＭＥＳ ＦＥＴを用いたマイクロ波増幅器の他の実施例
を示すパターン図である。図において、 ｉｌｌ ｅ
ｔｉｔ〜Ｈｔｒｙ ｔｒｉ ４ ｌ＆及び第５図の従来
例に示し次ものと同等であるので説明の重複を避ける。DESCRIPTION OF THE PREFERRED EMBODIMENTS The entire drawings of an embodiment of the present invention will be described below. 1st
The figure is a pattern diagram of a GaAa MESFET chip that operates in the microwave band, and the 1fJ2 figure is a GaAa MESFET chip pattern diagram of 9J1 figure.
FIG. 7 is a pattern diagram showing another example of a microwave amplifier using MES FETs. In the figure, ill e
Tit~Htry tri 4 l & is shown in the conventional example of FIG. 5 and is equivalent to the following, so redundant explanation will be avoided.
０２１はこの発明のＧａＡｓ ＭＥＳ ＦＥＴチップ本
体であり、ＧａＡｓ ＭＥＳ ＦＥＴチップ本体（目に
はＪ＠１図の点線で囲んである２つのＧ５Ａｓ ＭＥＳ
ＦＥＴすなわち、ＦＥＴ−Ａ Ｃ１３１とＦＥＴ−８
０４が構成されている。また、ＧｓＡａ ＭＥＳ ＦＥ
Ｔチップ本体α２の各同じ側の端面には、ＦＥＴ−Ａ
Ｃ１３１のゲート電極（２人）とｐａｒ−ａ （１４１
のドレイン電極（３Ｂ）、及びＰＥＴ−Ｂ Ｑ４１のゲ
ート電極（２Ｂ）とＦＥＴ−ＡＱ国のドレイン電極（３
Ａ）が配置されている。彌は入出力整合回路であり、Ｆ
ＥＴ−Ａ 輪の人力整合回路（６１とＰＥＴ−Ｂ ０４
）の出力整合回路（８）が同一基板にパターニングされ
ている。（ｌｎｔｉインダクタンス、θ７）にコンデン
サである。021 is the GaAs MES FET chip body of this invention, and the GaAs MES FET chip body (the two G5As MES surrounded by the dotted line in Figure J@1)
FET i.e. FET-A C131 and FET-8
04 is configured. Also, GsAa MES FE
FET-A is installed on the end face of each same side of the T-chip body α2.
C131 gate electrode (2 people) and par-a (141
drain electrode (3B), and gate electrode (2B) of PET-B Q41 and drain electrode (3B) of FET-AQ country.
A) is located. Ya is an input/output matching circuit, and F
ET-A wheel manual matching circuit (61 and PET-B 04
) is patterned on the same substrate. (lnti inductance, θ7) is a capacitor.
次に動作について説明する。Next, the operation will be explained.
９ｆ；２図で示し比マイクロ波増幅器は、従来例の第５
図で示したマイクロ波増幅器と全く同じ構成（２つのＧ
５Ａｓ ＭＥ、Ｓ ＦＥＴと入出力整合回路パターン及
び股間整合回路パターン）となっていをので、従来と同
一の原理でマイクロ波信号を増幅することができる。た
だし、この発明のＧｓＡａ ＭＥＳ ＦＥＴケ用いたマ
イクロ波増幅器では、
１、入出力整合回路０５１のパターンが１つの基板上で
構成できる。9f: The ratio microwave amplifier shown in Fig. 2 is the fifth conventional example.
Exactly the same configuration as the microwave amplifier shown in the figure (two G
5As ME, S FET, input/output matching circuit pattern, and crotch matching circuit pattern), the microwave signal can be amplified using the same principle as the conventional one. However, in the microwave amplifier using the GsAa MES FET of the present invention: 1. The pattern of the input/output matching circuit 051 can be constructed on one substrate.
２．１つのＧａＡａ ＭＥＳ ＦＥＴチップ本健ａ−に
２つのＭＥＳ ＦＥＴ スナわちＦＥＴ−Ａ Ｈ及びＦ
ＥＴ−Ｂ ０４） カ構成されているので、アセンブリ
が容易でかつ増幅器が小型化できる。2. One GaAa MES FET chip A- and two MES FET Snap FET-A H and F
ET-B 04) Since the amplifier is configured in a single configuration, assembly is easy and the amplifier can be miniaturized.
という利点がある。There is an advantage.
＠３図において、ＦＥＴ−ＢＯ２）のドレインを櫃（３
Ｂ）からＦＥＴ−Ａ （１３１のゲート電極（２Ａ）へ
の帰還回路を構成しており、Ｑ頓にインダクタ、ａ７）
はキャパシタである。帰還回路を付けることで、増幅器
の利得の平坦性の改善及び増幅帯域の拡大が可能である
が、この発明のＧａＡａ ＭＥＳ ＦＥＴ ｆ用いるこ
とで、整合回路基板を新たに追加することなく、パター
ンを変更することで帰還型マイクロ波増幅器が構成でき
る。In Figure @3, connect the drain of FET-BO2) to the
B) to FET-A (constitutes a feedback circuit to the gate electrode (2A) of 131, and inductor, a7)
is a capacitor. By adding a feedback circuit, it is possible to improve the flatness of the gain of the amplifier and expand the amplification band, but by using the GaAa MES FET f of this invention, the pattern can be changed without adding a new matching circuit board. By changing it, a feedback type microwave amplifier can be constructed.
なお、上記実施例では、マイクロ波トランジスタとして
ＧａＡｓ ＭＥＳ ＦＥＴの場合について説明したが、
バイポーラ接合型トランジスタでもよい。また、上記実
施例では、２段トランジスタ増幅器について説明し念が
、３段、４段等の多段トランジスタ増幅器においても、
１つのチップの同じ片側にゲート電極及びドレイン電極
全交互にそれぞれ３個及び４個並べることで同様の効果
がある。Note that in the above embodiment, the case where a GaAs MES FET was used as the microwave transistor was explained.
A bipolar junction transistor may also be used. In addition, although the above embodiment describes a two-stage transistor amplifier, it is also possible to use a multi-stage transistor amplifier such as a three-stage or four-stage transistor amplifier.
A similar effect can be obtained by arranging three and four gate electrodes and four drain electrodes alternately on the same side of one chip.
以上のようにこの発明によれば、１つのチップに２つの
トランジスタを構成し、チップの同じ片側ＶＣ１つのト
ランジスタの入力電極と、他のトランジスタの出力電極
とを配置したので、小型で組立の容易なマイクロ波増幅
器が得られる効果がある。As described above, according to the present invention, two transistors are configured on one chip, and the input electrode of one transistor and the output electrode of the other transistor are arranged on the same side of the chip, so it is small and easy to assemble. This has the effect of providing a microwave amplifier with a high quality.
Ｗｒ１図は、この発明の一実施例によるＧａＡ＠ＭＥＳ
ＦＥＴチップのパターン図、第２図はこの発明のＧｍＡ
ｓ ＭＥＳ ＦＥＴを用い九マイクロ波増幅器の一実施
例のパターン図、第３図はこの発明のＧａＡ＠ＭＥＳＦ
ＥＴＩ用い念マイクロ波増幅器の他の実施例のパターン
図、４ＰＪＡ図は従来のＧａＡｓ ＭＥＳ ＦＥＴチッ
プのパターン図、第５図は従来のＧａＡ＠ＭＥＳ ＦＥ
Ｔを用いたマイクロ波増幅器の一例を示すパターン図で
ある。
図において、（２ａ）（２ｂ） １１ゲート電極、（３
１）（３ｂ）はドレイン電極、（４）はソース電極、（
５）はスルーホール、（６）は入力整合回路、（７）は
股間整合回路、（８）は出力整合回路、＋９１ＨＤＣカ
ツトコンデンサ、ｔｌＯ＋は金ワイヤ、（１１）は接地
基板、αりはＧａＡａ ＭＥＳ ＦＥＴチップ本体、（
１３１ｉ ＦＥＴ−Ａ 、α４はＦＥＴ−Ｂ ％ｄ５１
ｆ’！入出力整合回路、ｏｍａインダクタ、（Ｉηにキ
ャパシタである。
なお、図中、同一符号に同一、又は相当部分？示す。Wr1 diagram shows GaA@MES according to an embodiment of the present invention.
The pattern diagram of the FET chip, Figure 2, shows the GmA of this invention.
s A pattern diagram of an embodiment of a microwave amplifier using MES FET, Figure 3 is a GaA@MESF of this invention.
A pattern diagram of another embodiment of an ETI-based microwave amplifier, 4PJA diagram is a pattern diagram of a conventional GaAs MES FET chip, and Fig. 5 is a pattern diagram of a conventional GaAs MES FET chip.
It is a pattern diagram which shows an example of the microwave amplifier using T. In the figure, (2a) (2b) 11 gate electrodes, (3
1) (3b) is the drain electrode, (4) is the source electrode, (
5) is a through hole, (6) is an input matching circuit, (7) is a crotch matching circuit, (8) is an output matching circuit, +91 HDC cut capacitor, tlO+ is a gold wire, (11) is a grounding board, α is GaAa MES FET chip body, (
131i FET-A, α4 is FET-B %d51
f'! Input/output matching circuit, oma inductor, (Iη is a capacitor. In the figure, the same reference numerals indicate the same or corresponding parts.
Claims (1)
形成し、チップの片側に１つのトランジスタの入力電極
と他のもう１つのトランジスタの出力電極を交互に配置
したことを特徴とするマイクロ波トランジスタ。A microwave transistor characterized in that two or more microwave transistors are formed on one chip, and the input electrode of one transistor and the output electrode of another transistor are alternately arranged on one side of the chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16960588A JPH0219008A (en) | 1988-07-07 | 1988-07-07 | Microwave transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16960588A JPH0219008A (en) | 1988-07-07 | 1988-07-07 | Microwave transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0219008A true JPH0219008A (en) | 1990-01-23 |
Family
ID=15889595
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16960588A Pending JPH0219008A (en) | 1988-07-07 | 1988-07-07 | Microwave transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0219008A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11154837A (en) * | 1997-09-18 | 1999-06-08 | Sanyo Electric Co Ltd | Semiconductor device, semiconductor integrated circuit and high frequency processing circuit |
| WO2005055418A1 (en) * | 2003-12-05 | 2005-06-16 | Murata Manufacturing Co., Ltd. | High-frequency amplifier and high-frequency radio communication device |
| JP2008228347A (en) * | 2008-05-26 | 2008-09-25 | Renesas Technology Corp | High-frequency power amplifier module |
| JP2011066380A (en) * | 2009-08-21 | 2011-03-31 | Toshiba Corp | High frequency circuit having multi-chip module structure |
-
1988
- 1988-07-07 JP JP16960588A patent/JPH0219008A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11154837A (en) * | 1997-09-18 | 1999-06-08 | Sanyo Electric Co Ltd | Semiconductor device, semiconductor integrated circuit and high frequency processing circuit |
| WO2005055418A1 (en) * | 2003-12-05 | 2005-06-16 | Murata Manufacturing Co., Ltd. | High-frequency amplifier and high-frequency radio communication device |
| GB2423417A (en) * | 2003-12-05 | 2006-08-23 | Murata Manufacturing Co | High-Frequency Amplifier And High-Frequency Radio Communication Device |
| GB2423417B (en) * | 2003-12-05 | 2007-10-10 | Murata Manufacturing Co | High-Frequency Amplifier And High-Frequency Radio Communication Device |
| JP2008228347A (en) * | 2008-05-26 | 2008-09-25 | Renesas Technology Corp | High-frequency power amplifier module |
| JP2011066380A (en) * | 2009-08-21 | 2011-03-31 | Toshiba Corp | High frequency circuit having multi-chip module structure |
| US8345434B2 (en) | 2009-08-21 | 2013-01-01 | Kabushiki Kaisha Toshiba | High frequency circuit having multi-chip module structure |
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