JPH0218932A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH0218932A JPH0218932A JP16962488A JP16962488A JPH0218932A JP H0218932 A JPH0218932 A JP H0218932A JP 16962488 A JP16962488 A JP 16962488A JP 16962488 A JP16962488 A JP 16962488A JP H0218932 A JPH0218932 A JP H0218932A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- photoresist
- resist
- infrared rays
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000000137 annealing Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 15
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract description 4
- 229910017604 nitric acid Inorganic materials 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 238000004140 cleaning Methods 0.000 abstract description 2
- 230000001678 irradiating effect Effects 0.000 abstract description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Cleaning In General (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は半導体基板の洗浄にランプアニール装置を用
いた半導体装置の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing a semiconductor device using a lamp annealing apparatus for cleaning a semiconductor substrate.
第２図（ａ） 、 （ｂ）は従来の半導体装置において
、半導体基板上のレジストを除去する製造工程を示す断
面図である。FIGS. 2(a) and 2(b) are cross-sectional views showing the manufacturing process of removing resist on a semiconductor substrate in a conventional semiconductor device.
図において、＋１１は半導体基板（２）はホトレジスト
（３）は残留レジストである。In the figure, +11 is the semiconductor substrate (2) and the photoresist (3) is the residual resist.
次に製造工程について説明する。Next, the manufacturing process will be explained.
まず、第２図（ａ）に示すように半導体基板（１）上に
ホトレジスト（２）を塗布する０次いで第２図（ｂ）の
ように硫硝酸等によりホトレジスト（２）除去を行い完
了するが、その際ホトレジスト（２）が完全に除去され
ず残留レジスト（３）が残されることがある。First, as shown in Figure 2(a), photoresist (2) is applied on the semiconductor substrate (1).Then, as shown in Figure 2(b), the photoresist (2) is removed using sulfuric acid, nitric acid, etc. to complete the process. However, in this case, the photoresist (2) may not be completely removed and a residual resist (3) may remain.
上記のような従来のホトレジスト除去方法では、ホトレ
ジストが除去しきれないという問題があった。The conventional photoresist removal method as described above has a problem in that the photoresist cannot be completely removed.
この発明は上記のような問題点を解決するためになされ
たものでホトレジストを完全に除去することを目的とす
る。This invention was made to solve the above-mentioned problems, and its purpose is to completely remove the photoresist.
この発明に係るホトレジスト除去方法は、ランプアニー
ル装置による赤外線を照射することにより、半導体基板
上の残留レジストを除去したものである。The photoresist removal method according to the present invention removes residual resist on a semiconductor substrate by irradiating it with infrared rays using a lamp annealing device.
この発明において、硫硝酸によるホトレジスト除去を行
った後ランプアニールを行うことにより、残留レジスト
は完全に除去さ・れ、半導体基板表面は清浄化される。In this invention, by performing lamp annealing after removing the photoresist using sulfuric acid and nitric acid, the remaining resist is completely removed and the surface of the semiconductor substrate is cleaned.
第１図（ａ）〜（ｃ）はこの発明に係る半導体装置製造
方法に関するレジスト除去方法の一実施例を示す図で、
特にその製造工程を説明するための断面図である０図に
おいて、（１１〜（３）は従来例の第２図に示したもの
と同等であるので説明を省略する。（４）はランプアニ
ール赤外線である。FIGS. 1(a) to 1(c) are diagrams showing an embodiment of a resist removal method related to a semiconductor device manufacturing method according to the present invention,
In particular, in Figure 0, which is a cross-sectional view for explaining the manufacturing process, (11 to (3)) are the same as those shown in Figure 2 of the conventional example, so the explanation will be omitted. (4) is a lamp annealing It is infrared.
次に製造工程について説明する。Next, the manufacturing process will be explained.
第１図（ａ）に示すように半導体基板ｆｉｌ上にホトレ
ジスト（２）を塗布し、次に第１図（）ｌ）に示すよう
に硫スト（３）を分解し完全に除去して完了する。As shown in Figure 1(a), photoresist (2) is applied on the semiconductor substrate fil, and then the sulfuric acid (3) is decomposed and completely removed as shown in Figure 1()l). do.
なお、上記実施例では、ランプアニール赤外線（４）の
照射について説明したが紫外線、又は遠紫外線照射につ
いても同様の効果を得ることができる。In the above embodiments, irradiation with lamp annealing infrared rays (4) was explained, but similar effects can be obtained by irradiation with ultraviolet rays or far ultraviolet rays.
〔発明の効果〕
以上のようにこの発明によれば、硫硝酸等によりホトレ
ジストを除去した後、ランプアニール赤外線を照射した
ので残留レジストを完全に除去でき、清浄な半導体装置
を得られる効果がある。[Effects of the Invention] As described above, according to the present invention, since the photoresist is removed with sulfuric acid, nitric acid, etc., and then the lamp annealing infrared rays are irradiated, the residual resist can be completely removed, and a clean semiconductor device can be obtained. .
第１図はこの発明に係る半導体装置の製造方法に関する
レジスト除去方法の一実施例を示すもので、製造工程を
説明する断面図、第２図は、従来の半導体装置の製造工
程を示す断面図である。図において、（１１は半導体基
板、（２）はホトレジスト（３）は残留レジスト、（４
）はランプアニール赤外線である。
なお、図中、同一符号は同一、又は相当部分を示す。
代理人 大 岩 増 雄FIG. 1 shows an embodiment of a resist removal method related to the semiconductor device manufacturing method according to the present invention, and is a cross-sectional view illustrating the manufacturing process, and FIG. 2 is a cross-sectional view showing the conventional semiconductor device manufacturing process. It is. In the figure, (11 is a semiconductor substrate, (2) is a photoresist, (3) is a residual resist, and (4) is a photoresist.
) is lamp annealing infrared. In addition, in the figures, the same reference numerals indicate the same or equivalent parts. Agent Masuo Oiwa
Claims (1)
ールによる赤外線を照射することにより、半導体基板上
の残留レジストを分解し、レジストを完全に除去するこ
とを特徴とする半導体装置の製造方法。1. A method for manufacturing a semiconductor device in which a semiconductor substrate is cleaned, characterized in that residual resist on the semiconductor substrate is decomposed by irradiation with infrared rays by lamp annealing, and the resist is completely removed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16962488A JPH0218932A (en) | 1988-07-07 | 1988-07-07 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16962488A JPH0218932A (en) | 1988-07-07 | 1988-07-07 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0218932A true JPH0218932A (en) | 1990-01-23 |
Family
ID=15889955
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16962488A Pending JPH0218932A (en) | 1988-07-07 | 1988-07-07 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0218932A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5421213A (en) * | 1990-10-12 | 1995-06-06 | Okada; Kazuhiro | Multi-dimensional force detector |
| US6282956B1 (en) | 1994-12-29 | 2001-09-04 | Kazuhiro Okada | Multi-axial angular velocity sensor |
| US6314823B1 (en) | 1991-09-20 | 2001-11-13 | Kazuhiro Okada | Force detector and acceleration detector and method of manufacturing the same |
-
1988
- 1988-07-07 JP JP16962488A patent/JPH0218932A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5421213A (en) * | 1990-10-12 | 1995-06-06 | Okada; Kazuhiro | Multi-dimensional force detector |
| US5639973A (en) * | 1990-10-12 | 1997-06-17 | Okada; Kazuhiro | Force detector |
| US5811693A (en) * | 1990-10-12 | 1998-09-22 | Okada; Kazuhiro | Force detector and acceleration detector and method of manufacturing the same |
| US6053057A (en) * | 1990-10-12 | 2000-04-25 | Okada; Kazuhiro | Force detector |
| US6158291A (en) * | 1990-10-12 | 2000-12-12 | Okada; Kazuhiro | Force detector and acceleration detector |
| US6477903B2 (en) | 1990-10-12 | 2002-11-12 | Kazuhiro Okada | Force detector and acceleration detector and method of manufacturing the same |
| US6716253B2 (en) | 1990-10-12 | 2004-04-06 | Kazuhiro Okada | Force detector |
| US6779408B2 (en) | 1990-10-12 | 2004-08-24 | Kazuhiro Okada | Force detector |
| US6314823B1 (en) | 1991-09-20 | 2001-11-13 | Kazuhiro Okada | Force detector and acceleration detector and method of manufacturing the same |
| US6282956B1 (en) | 1994-12-29 | 2001-09-04 | Kazuhiro Okada | Multi-axial angular velocity sensor |
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