JPH0218397A - Method for growing algaas crystal - Google Patents
Method for growing algaas crystalInfo
- Publication number
- JPH0218397A JPH0218397A JP16729288A JP16729288A JPH0218397A JP H0218397 A JPH0218397 A JP H0218397A JP 16729288 A JP16729288 A JP 16729288A JP 16729288 A JP16729288 A JP 16729288A JP H0218397 A JPH0218397 A JP H0218397A
- Authority
- JP
- Japan
- Prior art keywords
- vapor pressure
- growth
- crystal
- composition
- optimum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 title claims abstract description 15
- 239000000203 mixture Substances 0.000 claims description 24
- 239000007791 liquid phase Substances 0.000 claims description 6
- 238000002109 crystal growth method Methods 0.000 claims description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 abstract 1
- 239000000155 melt Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000010453 quartz Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 125000005842 heteroatom Chemical group 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 101150030170 Paat gene Proteins 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、液相成長によるＡｌえＧａ、、ＡＳ結晶成長
において、化学１１目的組成からの偏差を最小にするた
めの結晶成長方法で、特に結晶成長中に印加するＡｓ蒸
気圧の大きさに関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention is a crystal growth method for minimizing deviation from a chemical 11 target composition in AlGa, AS crystal growth by liquid phase growth. In particular, it relates to the magnitude of As vapor pressure applied during crystal growth.
（従来の技術）
従来、ＧａＡｓを代表とする■−ｖ族間化合物半導体に
おいては、Ｖ族元素の蒸気圧が高く、結晶成長中にもＶ
族元素が蒸発することによる化学量論的組成からの偏差
が、電気的、光学的、結晶学的特性に大きな影響を与え
、発光ダイオード、半導体レーザ等のオプトエレクトロ
ニクスデバイスの特性に影響していた。本発明者により
、Ｑａ Ａｓにおいて結晶成長中に最適なＡｓ蒸気圧を
印加することにより、化学量論的組成からの偏差を小さ
くすることができることが明らかにされ、その最適Ａｓ
蒸気圧は成長温度Ｔ （Ｋ＞の時には、
（７ｏｒｒ）（ｋはボルツマン定数〕
と求められ、液相成長のみならず、Ｑａ Ａｓ融液成長
にも適用され、高品質なＱａ Ａｓ結晶が得られている
。しかし発光ダイオード、半導体レーザ等のオプトエレ
クトロニクスデバイスは、Ｑａ ＡｓよりはむしろＡＩ
）ｃＧａ、−、Ａｓの多層成長を行なう場合が多いが、
各Ａｌ組成χに対する最適Ａｓ蒸気圧がわからないため
にＡｌ工Ｑａ、−ＸＡｓの成長の際にはＱａ Ａｓの最
適圧を印加したり、あるいはＡＳの解離を最小限少なく
するために、カーボン製キャップをメルト槽にかぶせた
りして行なわれていたため、化学愚論的組成からの偏差
を極小にした成長は行なわれていなかった。(Prior art) Conventionally, in the ■-V intergroup compound semiconductor represented by GaAs, the vapor pressure of the V group element is high, and even during crystal growth, V
Deviations from the stoichiometric composition due to evaporation of group elements have a significant impact on electrical, optical, and crystallographic properties, and have affected the properties of optoelectronic devices such as light-emitting diodes and semiconductor lasers. . The present inventor has revealed that the deviation from the stoichiometric composition can be reduced by applying the optimal As vapor pressure during crystal growth in QaAs, and the
The vapor pressure is calculated as (7orr) (k is Boltzmann's constant) when the growth temperature T (K> However, optoelectronic devices such as light emitting diodes and semiconductor lasers are based on AI rather than QaAs.
) cGa, -, As are often grown in multiple layers,
Since the optimum As vapor pressure for each Al composition χ is not known, it is necessary to apply the optimum pressure of QaAs during the growth of Al process Qa, -XAs, or to minimize the dissociation of AS using a carbon cap. Because this process was carried out by covering the melt tank with molten metal, it was not possible to achieve growth that minimized deviations from the chemical composition.
（発明の目的）
本発明は、上記従来技術の欠点を克服し、化学量論的組
成からの偏差を制御した高品質のＡＩえＱａ Ａｓ
結晶を得るための方法を提供することを目的とする。(Objective of the Invention) The present invention overcomes the drawbacks of the above-mentioned prior art and provides high quality AIQAs with controlled deviations from the stoichiometric composition.
The purpose is to provide a method for obtaining crystals.
本発明の第１の特徴は、実験的にＡｌ工ＱａＨ−１Ａ
Ｓの最適Ａｓ蒸気圧を決定した結果、Ａｌ組組成−大き
くなるにしたがい、Ｑａ Ａｓの最適Ａｓ蒸気圧よりも
小さいＡｓ蒸気圧を印加することで、化学量論的組成か
らの偏差に制御されたＡＩ ＸＧａ 、−ＸＡｓ結晶を
得ることができることにある。The first feature of the present invention is that an aluminum alloy QaH-1A was experimentally tested.
As a result of determining the optimum As vapor pressure for S, as the Al group composition increases, the deviation from the stoichiometric composition can be controlled by applying an As vapor pressure smaller than the optimum As vapor pressure for Qa As. It is possible to obtain a crystal of AI XGa, -XAs.
本発明の第２の特徴は、発光ダイオード等のＡｌ工Ｇａ
ｔ−χＡｓ多層成長に対して、各成長層のＡｌ組組成一
対応した最適Ａｓ蒸気圧を独立に制御することで、化学
量論的組成からの偏差寺最小にしたＡｌ工Ｑａ、−エＡ
Ｓ多層成長層を液相成長スライドボード法において実現
できる点にある。The second feature of the present invention is that Al-based Ga
For multi-layer growth of t-χAs, by independently controlling the Al group composition and the corresponding optimal As vapor pressure of each growth layer, the deviation from the stoichiometric composition is minimized.
The advantage is that the S multilayer growth layer can be realized using the liquid phase growth slide board method.
（発明の実施例〕
本発明の基礎となったＧａＡＳの最適Ａｓ蒸気圧及びＡ
Ｉ ：ｃＧａ ｌ−Ｘ Ａ’の最適Ａｓ蒸気圧について
説明する。第１図は蒸気圧制ｍ温度差液相成長法により
、Ｇ ａ Ａ Ｓ ｓ Ａ Ｉ ｘ−Ｇ ａｔ −ｘＡ
ｓを結晶成長するための＠置図である。Ｈ２雰囲気中で
カーボンボート１が石英製反応管２の中に入れられ、電
気炉３により成長温度に達している。メルト槽４にはタ
ングステンヒータ５が巻かれ、外部から定電流源６によ
り電力を供給し、メルト７の上下に温度差を付ける。ス
ライダー８には基板９を入れるための溝が掘ってあり、
外部から石英製スライダー棒１０を移動して、メルト７
の下部へ移動し、成長を行なう。この成長時に、金属Ａ
ｓ１１を入れた石英製容器１２からＡｓ圧印加用パイプ
１３をメルト槽４に挿入し、Ａｓ蒸気圧をメルト７の上
部に印加する。金属ＡＳ１１は、Ａｓ圧印加用電気炉１
４により加熱し、金属ＡＳ１１の温度を制御することに
より、Ａｓの蒸気圧を制御する第２図＜８ ）に、Ｑａ
Ａｓを成長する場合、成長温度Ｔを一定とし、印加Ａ
ｓ蒸気圧を変化させた場合の成長した結晶のエッチピッ
ト密度（ＥＰＤ）及びイオン化不純物密度との関係を示
す。あるＡ８蒸気圧ＰＡａｔ においてＥＰＤ及びイ
オン化不純物密度ともに極小値をとり、化学量論的組成
に近い結晶を作ることができる。(Example of the invention) Optimum As vapor pressure and A of GaAS, which is the basis of the present invention
The optimum As vapor pressure of I:cGal-X A' will be explained. Figure 1 shows the results of the vapor pressure control m temperature difference liquid phase growth method.
This is a diagram for crystal growth of s. A carbon boat 1 is placed in a quartz reaction tube 2 in an H2 atmosphere, and the growth temperature is reached by an electric furnace 3. A tungsten heater 5 is wound around the melt tank 4, and electric power is supplied from the outside by a constant current source 6 to create a temperature difference between the top and bottom of the melt 7. A groove is dug in the slider 8 for inserting the board 9,
Move the quartz slider rod 10 from the outside and remove the melt 7.
Move to the bottom of the page and grow. During this growth, metal A
The pipe 13 for applying As pressure is inserted into the melt tank 4 from the quartz container 12 containing s11, and As vapor pressure is applied to the upper part of the melt 7. The metal AS11 is an electric furnace 1 for applying As pressure.
In FIG. 2 <8), the vapor pressure of As is controlled by heating the metal AS11 by
When growing As, the growth temperature T is kept constant and the applied A
The relationship between the etch pit density (EPD) and the ionized impurity density of the grown crystal when changing the s vapor pressure is shown. At a certain A8 vapor pressure PAat, both the EPD and the ionized impurity density take minimum values, making it possible to form crystals with close to stoichiometric composition.
本発明者により、成長温度Ｔと最適Ａｓ蒸気圧ｐ ０
９％の関係は、
Ｐ Ｄｐｔ−２，６Ｘ１０’ ｅｘｐ （−り匹−ｅ
Ｖ）八％
ｋＴ（Ｔｏｒｒ）
と実験的に求められている。但し、ｋはボルツマン定数
である。The present inventor has determined that the growth temperature T and the optimum As vapor pressure p 0
The 9% relationship is P Dpt-2,6X10' exp (-ri-e
V) 8%
It has been experimentally determined that kT (Torr). However, k is Boltzmann's constant.
例えば成長温度が７５０℃の場合、最適Ａｓ蒸気圧は２
９ Ｔ ｏｒｒである。For example, when the growth temperature is 750°C, the optimal As vapor pressure is 2
It is 9 Torr.
ＡＩ−ｃＱａ、−えＡｓに対しても、化学愚論的組成の
制御された完全結晶を成長するには、蒸気圧制御法が不
可欠である。第１図の成長系を用いてＡｓ蒸気圧制御し
てＡｌ工Ｑａ、−エＡｓの結晶成長を行ない、印加Ａｓ
蒸気圧とＡ Ｉ ：ｔＱａ、−、へｓ成長層のエッチビ
ット密度（ＥＰＤ）及びイオン化不純物密度の関係を求
めた結果を第２図（ｂ ）、（Ｃ）に示す。第２図（ｂ
）はＡｌ組組成−０，３の場合、第２図（Ｃ）はＡｌ組
成：ｃ、−０，６の場合である。Ｑａ Ａｓｏｐｔａｐ
％
と同様に、あるＡｓ蒸気圧Ｐ、ＰＡいでそれＡＳ２
ｐｓ
ぞれ極小となっている。このことからＰＡａ□ＰＡ、Ｓ
ｐｔがＡ ’ Ｄ、ａ Ｇ ａＯ，Ｔ Ａ Ｓ及びＡ
Ｉ Ｏ，６Ｇ ａＯ，＋ ＡＳの最適Ａｓ蒸気圧と考え
られ、化学量論的組成からの偏差の少ないＡｌ工Ｑａ、
−ＬＡｓ結晶であると考えられる。For AI-cQa,-As as well, a vapor pressure control method is essential in order to grow perfect crystals with controlled chemical compositions. Using the growth system shown in Fig. 1, the crystal growth of Al process Qa, -air As was carried out by controlling the As vapor pressure, and the applied As
The relationship between the vapor pressure and the etch bit density (EPD) and ionized impurity density of the A I :tQa, -, hes growth layer is shown in FIGS. 2(b) and 2(c). Figure 2 (b
) is the case where the Al group composition is -0,3, and FIG. 2(C) is the case where the Al composition is c, -0,6. Qa Asoptap
%, AS2 ps becomes minimum at certain As vapor pressures P and PA, respectively. From this, PAa□PA,S
pt is A' D, a G aO, T A S and A
I O, 6G aO, + Al alloy Qa, which is considered to be the optimal As vapor pressure for AS and has little deviation from the stoichiometric composition.
-It is considered to be a LAs crystal.
第２図（ａ ）乃至（Ｃ）よりＡ ｌ ｚ Ｇ ａ Ｈ
−ｘＡｓのＡｌ組成χが大きくなるにしたがって最適Ａ
ｓ蒸気圧は小さくなることが明らかになった。From Figure 2 (a) to (C), A l z G a H
-x As the Al composition χ of As increases, the optimum A
It has become clear that the vapor pressure of s becomes smaller.
第３図には、本発明の他の実施例を示す。発光ダイオー
ド、半導体レーザ等のオプトエレクトロニクスデバイス
では、ＡｌχＧａ、−丸Ａｓの多層成長によりｐｎ接合
を形成する。例えば６６０ｎｍ帯のＡ ｌ ｘ Ｑａ
１−ｘ ＡＳ赤色発光ダイオードの場合、Ｄ” −Ｇａ
Ａｓ基板上にｐ” −Ａ’ ０１５ Ｇ ａＯ，６３
Ａ ” ｌ！！、ｎ” −ＡＩ。、。Ｇ ａ 、３゜Ａ
ｓ１ｌを形成するシングルへテロ型あるいはｏ” −Ｇ
ａ Ａｓ ｉｕ根板上ｐ” −Ａ Ｉ、７．Ｇａ、３゜
Ａｓ ［ｐＡ ’ ｏ、３５ Ｇ ａｏ、６ｓ Ａ Ｓ
ｍ ｓ ｎ” Ａ ’ ０．１ｏＧ ａ ｏ４ｏＡ Ｓ
層を形成するダブルへテロ型が代表的な構造である。第
３図にシングルへテロ型のＡｌえＱａｌ−ＸＡ３発光ダ
イオード液相結晶成長装置を示す。カーボンボート２０
には、メルト槽２１．２２が存在し、それぞれＺｎドー
プＡ ｌ ｏ、ａｓ Ｇ ａ、、ＡＳＩ、ＴｅドープＡ
ｌ ０．７６ Ｇ ａ Ｏａ（、Ａ Ｓ層を成長する
ためのメルト２３．２４が仕込んである。温度差用ヒー
タ２５．２６によりメルトの上下に温度差を付け、スラ
イダー２７に保持されているＱａ Ａｓ基板２８上に結
晶成長する。各メルト槽２１．２２には、片端に金属Ａ
ｓ２９．３０を入れたＡｓ圧印加用パイプ３１．３２が
挿入されている。各メルトに印加するＡ’ｓ蒸気圧は、
成長層のＡｌ組成χで決められる最適ＡＳ蒸気圧を印加
するために、金属ＡＳ２９．３０は異なる温度ＴＡｓ４
、ＴＡ５□のところに置かれる。あらかじめ電気炉の温
度分布を調べた上で、Ａｓ圧印加用バイブ３１．３２の
長さを決定する。金属Ａｓ２９．３０が置かれる場所の
温度は均熱領域とし、温度調節は各ＡＳ圧毎に独立に制
御してもよいし、１台の１１４で制御してもよい。FIG. 3 shows another embodiment of the invention. In optoelectronic devices such as light emitting diodes and semiconductor lasers, pn junctions are formed by multilayer growth of AlχGa and -round As. For example, A l x Qa in the 660 nm band
For 1-x AS red light emitting diode, D”-Ga
p''-A' 015 GaO,63 on As substrate
A”l!!,n”-AI. ,. G a, 3゜A
Single heterozygous or o”-G forming s1l
a As iu on the root platep'' -A I, 7.Ga, 3°As [pA' o, 35 Gao, 6s A S
m s n” A ' 0.1oG ao4oA S
A typical structure is a double hetero type that forms layers. FIG. 3 shows a single hetero type Al-Qal-XA3 light emitting diode liquid phase crystal growth apparatus. carbon boat 20
There are melt tanks 21 and 22, respectively, containing Zn-doped A lo, as Ga, , ASI, and Te doped A.
l 0.76 G a Oa (, A Melt 23.24 for growing the S layer is prepared. A temperature difference is created between the top and bottom of the melt by a temperature difference heater 25.26, and the melt is held by a slider 27. Crystals grow on the Qa As substrate 28. Each melt tank 21, 22 has metal A at one end.
Pipe 31.32 for applying As pressure containing s29.30 is inserted. The A's vapor pressure applied to each melt is
In order to apply the optimum AS vapor pressure determined by the Al composition χ of the growth layer, the metal AS29.30 is heated at different temperatures TAs4.
, is placed at TA5□. After examining the temperature distribution of the electric furnace in advance, the lengths of the vibrators 31 and 32 for applying As pressure are determined. The temperature of the place where the metal As29.30 is placed is set as a uniform heating area, and the temperature adjustment may be controlled independently for each AS pressure, or may be controlled by one unit 114.
このように、結晶成長中に各Ａｌ組成χに対応する最適
ＡＳ蒸気圧を印加しながら成長することにより、化学量
論的組成の制御された発光ダイオードを製作することが
できる。In this manner, by growing the crystal while applying the optimum AS vapor pressure corresponding to each Al composition χ, a light emitting diode with a controlled stoichiometric composition can be manufactured.
第３図は、液相成長法のうち、温度差法による級晶成長
について述べたが、徐冷法に対しても応用できることは
明らかである。Although FIG. 3 describes class crystal growth by a temperature difference method among liquid phase growth methods, it is clear that the method can also be applied to a slow cooling method.
第４図には、印加ＡＳ蒸気圧と発光ダイオードの発光効
率の関係を示す。第２図において得られた最適Ａｓ圧を
印加することにより発光効率を最大にすることができる
。FIG. 4 shows the relationship between the applied AS vapor pressure and the luminous efficiency of the light emitting diode. By applying the optimum As pressure obtained in FIG. 2, the luminous efficiency can be maximized.
発光ダイオードのみならず、半導体レーザ等のＡｌ工Ｑ
ａ、−、Ａｓデバイスに対して応用できることはもちろ
んである。Aluminum processing Q for not only light emitting diodes but also semiconductor lasers, etc.
Of course, it can be applied to a,-,As devices.
以上の様に、本発明によればＡｌえＱａ、−えＡｓに対
する最適Ａｓ蒸気圧を印加することにより、化学量論的
組成からの偏差を最小にし、極めて完全結晶に近いＡｌ
ＧａＡｓ結晶を得ることができる。As described above, according to the present invention, the deviation from the stoichiometric composition is minimized by applying the optimum As vapor pressure to Al Qa, - As, and Al
GaAs crystals can be obtained.
又、各メルト槽に各々のＡＩ組成人に対して異なる最適
Ａｓ蒸気圧を印加することにより極めて発光効率の高い
発光ダイオードを得ることができる。Furthermore, by applying a different optimum As vapor pressure to each melt tank for each AI composition, a light emitting diode with extremely high luminous efficiency can be obtained.
第１図は蒸気圧ｖｌ ＩＩＩ潟度差液相成長法によるＡ
Ｉ ｘ Ｇ ａ １−エＡＳ結晶成長装置図、第２図
は第１図の装置を用いて成長した結晶の印加Ａｓ蒸気圧
と、エッチビット密度及びイオン化不純物密度の関係を
（ａ ）Ｇａ Ａｓ、（ｂ）Ａｌｏ３Ｑ ａ ｏ、’ｒ
Ａ Ｓ、（Ｃ）Ａｌ ｏ、６ Ｇ ａ ｏ、４ Ａ
Ｓの場合について示す図、第３図は各メルト槽に各々の
Ａｌ組成見に対して異なる最適△Ｓ圧を印加するＡｌ工
Ｇａ、−エＡｓシングルへテロ型発光ダイオード成長装
置図、第４図は第３図の装置を用いて製作した発光ダイ
オードの印加Ａｓ蒸気圧と発光効率の関係を示す図であ
る。
１．２０・・・成長用カーボンボート、２・・・石英製
反応管、３・・・成長ゾーン電気炉、４．２１．２２・
・・メルト槽、５．２５．２６・・・温度差用ヒータ、
６・・・定電流源、７．２３．２４・・・メルト、８．
２７ ・・・スライダー、９．２８・・・ＧａＡｓ基板
、１０・・・スライダー棒、１１．２９．３０・・・金
属ＡＳ１１２・・・石英製容器、１３．３１．３２・・
−Ａｌｌ圧印加用パイプ、１４・・・ＡＳゾーン電気炉
嬉２■
慈４−乙Figure 1 shows vapor pressure vl
I x Ga 1-Air AS crystal growth apparatus diagram, Figure 2 shows the relationship between the applied As vapor pressure, etch bit density, and ionized impurity density of the crystal grown using the apparatus shown in Figure 1. (a) GaAs , (b) Alo3Q a o,'r
A S, (C) Al o, 6 Ga o, 4 A
Figure 3 is a diagram showing the case of Al, Ga, - Air, and As single hetero type light emitting diode growth apparatus in which different optimum ΔS pressures are applied to each melt tank for each Al composition. This figure shows the relationship between the applied As vapor pressure and the luminous efficiency of a light emitting diode manufactured using the apparatus shown in FIG. 3. 1.20... Carbon boat for growth, 2... Quartz reaction tube, 3... Growth zone electric furnace, 4.21.22.
...melt tank, 5.25.26...temperature difference heater,
6... Constant current source, 7.23.24... Melt, 8.
27...Slider, 9.28...GaAs substrate, 10...Slider rod, 11.29.30...Metal AS112...Quartz container, 13.31.32...
-All pressure application pipe, 14... AS zone electric furnace 2■ Ji 4-Otsu
Claims (2)
結晶成長において、Ａｌ組成χが大きくなるほど、Ｇａ
Ａｓの最適Ａｓ蒸気圧Ｐ＿Ａ＿ｓ＾ｏ＾ｐ＾ｔ＝２．６
×１０＾６ｅｘｐ｛（−１．０５／ｋＴ）ｅＶ｝（Ｔｏ
ｒｒ）〔但しｋはボルツマン定数、Ｔは成長温度 Ｋ〕よりも小さなＡｓ蒸気圧を成長中に印 加することを特徴とするＡｌ＿χＧａ＿１＿−＿χＡｓ
結晶成長方法。(1) In the crystal growth of Al_χGa_1_−_χAs by liquid phase growth, the larger the Al composition χ, the more Ga
Optimal As vapor pressure P_A_s^o^pt=2.6
×10^6exp {(-1.05/kT)eV}(To
rr) [where k is the Boltzmann constant and T is the growth temperature K] is applied during the growth of Al_χGa_1_−_χAs.
Crystal growth method.
χＡｓ多層成長において、各メルト槽に各成長層のＡｌ
組成χにほぼ対応した最適Ａｓ蒸気圧を印加することを
特徴とするＡｌ＿χＧａ＿１＿−＿χＡｓ結晶成長方法
。(2) Al_χGa_1_-_ by slide boat method
In χAs multilayer growth, Al of each growth layer is placed in each melt bath.
A method for growing an Al_χGa_1_−_χAs crystal, characterized by applying an optimum As vapor pressure that substantially corresponds to the composition χ.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16729288A JPH0218397A (en) | 1988-07-04 | 1988-07-04 | Method for growing algaas crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16729288A JPH0218397A (en) | 1988-07-04 | 1988-07-04 | Method for growing algaas crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0218397A true JPH0218397A (en) | 1990-01-22 |
Family
ID=15847051
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16729288A Pending JPH0218397A (en) | 1988-07-04 | 1988-07-04 | Method for growing algaas crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0218397A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5326280A (en) * | 1976-08-24 | 1978-03-10 | Handotai Kenkyu Shinkokai | Crystal growth for mixed crystals of compund semiconductor |
-
1988
- 1988-07-04 JP JP16729288A patent/JPH0218397A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5326280A (en) * | 1976-08-24 | 1978-03-10 | Handotai Kenkyu Shinkokai | Crystal growth for mixed crystals of compund semiconductor |
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