JPH0217678A - Element structure of infrared detector and manufacture thereof - Google Patents
Element structure of infrared detector and manufacture thereofInfo
- Publication number
- JPH0217678A JPH0217678A JP63166793A JP16679388A JPH0217678A JP H0217678 A JPH0217678 A JP H0217678A JP 63166793 A JP63166793 A JP 63166793A JP 16679388 A JP16679388 A JP 16679388A JP H0217678 A JPH0217678 A JP H0217678A
- Authority
- JP
- Japan
- Prior art keywords
- bonding pad
- compound semiconductor
- semiconductor crystal
- electrode wiring
- section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 38
- 150000001875 compounds Chemical class 0.000 claims abstract description 31
- 239000013078 crystal Substances 0.000 claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000010030 laminating Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 abstract description 4
- 230000001070 adhesive effect Effects 0.000 abstract description 4
- 238000007743 anodising Methods 0.000 abstract 1
- 230000002950 deficient Effects 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 4
- 239000010407 anodic oxide Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 229910004262 HgTe Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
概要
赤外線検知素子の素子構造及び製造方法に関し、断線す
る恐れの少ない電極配線を有し、更に素子製造プロセス
を簡素化した赤外線検知素子の素子構造及び製造方法を
提供することを目的とし、受光部、電極配線及びボンデ
ィングパッド部を有する化合物半導体結晶を用いた赤外
線検知素子の素子構造において、ボンディングパッド部
ヲ基板に接着された化合物半導体結晶上にバッファ層及
び金属層を積層して形成するとともに、電極配線をボン
ディングパッド部の金属層と同一金属で該金属層に連続
して化合物半導体結晶上に形成して構成する。DETAILED DESCRIPTION OF THE INVENTION Overview Regarding the element structure and manufacturing method of an infrared sensing element, an element structure and manufacturing method of an infrared sensing element which has electrode wiring with less risk of disconnection and further simplifies the element manufacturing process is provided. For this purpose, in an element structure of an infrared sensing element using a compound semiconductor crystal having a light receiving part, an electrode wiring, and a bonding pad part, a buffer layer and a metal layer are placed on the compound semiconductor crystal bonded to the bonding pad part. The electrode wiring is formed by laminating the same metal as the metal layer of the bonding pad portion, and is formed continuously from the metal layer on the compound semiconductor crystal.
産業上の利用分野
本発明は赤外線検知素子の素子構造及び製造方法に関す
る。INDUSTRIAL APPLICATION FIELD The present invention relates to an element structure and manufacturing method of an infrared sensing element.
赤外線センサには、焦電素子、サーモバイル等を用いた
熱型センサと半導体を利用した光電効果型（量子型）セ
ンサがある。一般に熱型センサでは感度の波長依存性は
無いが、感度が低く応答速度も遅いのでリアルタイムの
赤外線センサとしては不向きである。一方、光電効果型
センサは感度が高く、応答速度も速いが、素子の液体窒
素温度での冷却が必要である。光電効果型赤外線センサ
は、光導電型、光起電力型、ＭＩＳ型に分類される。こ
のうち光導電型センサは、光照射時の抵抗変化を利用す
るもので、テルル化カドミウム水銀（ＨｇＣｄＴｅ）や
Ｐｂ５ＳＰｂＳｅなどの真性半導体を用いるものと、Ｓ
ｉ ： Ｉｎ５Ｓ＋ ：Ｇａ。Infrared sensors include thermal type sensors using pyroelectric elements, thermomobiles, etc., and photoelectric effect type (quantum type) sensors using semiconductors. In general, thermal sensors have no wavelength dependence in sensitivity, but their low sensitivity and slow response speed make them unsuitable as real-time infrared sensors. On the other hand, photoelectric effect sensors have high sensitivity and fast response speed, but require cooling of the device to liquid nitrogen temperature. Photoelectric effect type infrared sensors are classified into photoconductive type, photovoltaic type, and MIS type. Among these, photoconductive sensors utilize resistance changes during light irradiation, and include those that use intrinsic semiconductors such as cadmium mercury telluride (HgCdTe) and Pb5SPbSe, and those that use intrinsic semiconductors such as S
i: In5S+:Ga.
Ｇｅ ：Ｈｇ５Ｇｅ ：Ａｕなどのように不純物をドー
プした外因性半導体を用いるものがある。Some use extrinsic semiconductors doped with impurities, such as Ge:Hg5Ge:Au.
又赤外線による計測では、目標物体に接触することなく
物体の存在、形状、温度、組成などを知ることが重要で
あり、赤外線センサは人工衛星による気象観測、防犯、
防災、地質・資源調査、赤外線サーモグラフィによる医
療用等に用いられている。この目的のためには、波長２
〜１５μｍ領域での赤外線センサの開発が重要となる。In addition, in infrared measurement, it is important to know the existence, shape, temperature, composition, etc. of a target object without touching it, and infrared sensors are used for meteorological observation by artificial satellites, crime prevention,
It is used for disaster prevention, geological and resource surveys, and medical purposes using infrared thermography. For this purpose, wavelength 2
The development of infrared sensors in the ~15 μm region is important.
かつてＩｎＳｂよりも長い波長のセンサにはＧｅ：Ｈｇ
などの外因性半導体が用いられていたが、最近ではＨｇ
ＣｄＴｅセンサが大きな注目を集めている。In the past, Ge:Hg was used as a sensor with a longer wavelength than InSb.
Extrinsic semiconductors such as Hg
CdTe sensors are attracting a lot of attention.
ＨｇＣｄＴｅは半導体のＣｄＴｅと半金属のＨｇＴｅの
混晶であり、その組成を制御することにより波長２〜１
５μｍの範囲で自由に分光感度特性を選ぶことが可能に
なる。そこで半導体としてＨｇＣｄＴｅ等の化合物半導
体結晶を用いた、電極部の断線等を起こすことの無い信
頼性の高い赤外線検知素子の素子構造が要望されている
。HgCdTe is a mixed crystal of semiconductor CdTe and semimetal HgTe, and by controlling its composition, wavelengths of 2 to 1
It becomes possible to freely select spectral sensitivity characteristics within the range of 5 μm. Therefore, there is a need for a highly reliable infrared sensing element structure that uses a compound semiconductor crystal such as HgCdTe as a semiconductor and does not cause disconnection of the electrode portion.
従来の技術
第５図は従来の赤外線検知素子の素子構造断面図を示し
ている。１はサファイヤ基板であり、このサファイヤ基
板１上にＨｇＣｄＴｅ等の化合物半導体結晶２が接着剤
３によりストライブ状に接着されている。４は赤外線受
光部であり、電極配線６を両側から形成して受光部４の
幅を規制している。電極配線６は例えばＩｎ、、Ａ、ｕ
等の金属から形成されており、化合物半導体結晶２の段
差部２ａに沿ってサファイヤ基板１まで伸長しており、
サファイヤ基板１上に形成されたボンディングパッド部
８に接続されている。ボンディングパッド部８はＣｒ、
ＡＩを積層して構成されており、このボンディングパッ
ド部８に信号取り出し用のボンディングワイヤが超音波
ボンディングによりボンディングされている。BACKGROUND OF THE INVENTION FIG. 5 shows a sectional view of the structure of a conventional infrared sensing element. Reference numeral 1 denotes a sapphire substrate, on which a compound semiconductor crystal 2 such as HgCdTe is adhered in the form of a stripe with an adhesive 3. As shown in FIG. Reference numeral 4 denotes an infrared light receiving section, and the width of the light receiving section 4 is regulated by forming electrode wiring 6 on both sides. The electrode wiring 6 is made of, for example, In, A, u
The sapphire substrate 1 is formed from a metal such as, and extends along the stepped portion 2a of the compound semiconductor crystal 2 to the sapphire substrate 1.
It is connected to a bonding pad section 8 formed on the sapphire substrate 1. The bonding pad portion 8 is made of Cr,
It is constructed by laminating AI, and a bonding wire for signal extraction is bonded to this bonding pad portion 8 by ultrasonic bonding.
発明が解決しようとする課題
しかし上述したような素子構造では、化合物半導体結晶
の段差部で電極の断線を生じる恐れがあり、また製造プ
ロセスでのバターニング回数が多く、製造プロセスが複
雑になるという問題があった。更に電極配線とボンディ
ングパッド部とを異種金属から形成していたため、コン
タクト不良を生じやすいとともに熱的反応により合金化
を生じ、コンタクト抵抗を増大させるという問題があっ
た。Problems to be Solved by the Invention However, with the device structure described above, there is a risk of electrode disconnection at the stepped portion of the compound semiconductor crystal, and the manufacturing process is complicated due to the large number of patterning steps. There was a problem. Furthermore, since the electrode wiring and the bonding pad portion are made of different metals, there are problems in that contact failure is likely to occur and alloying occurs due to thermal reaction, increasing contact resistance.
本発明はこのような点に鑑みてなされたものであり、そ
の目的とするところは、断線する恐れの少ない電極配線
を有し、更に素子製造プロセスを簡素化した赤外線検知
素子の素子構造及び製造方法を提供することである。The present invention has been made in view of these points, and its purpose is to provide an element structure and manufacturing method for an infrared sensing element that has electrode wiring that is less likely to be disconnected and further simplifies the element manufacturing process. The purpose is to provide a method.
課題を解決するための手段 第１図は本発明の素子構造の原理図を示している。Means to solve problems FIG. 1 shows a principle diagram of the device structure of the present invention.
１２は基板１０上に接着剤１３により接着された化合物
半導体結晶であり、この化合物半導体結晶１２上に受光
部１４及びボンディングパッド部１６を形成する。ボン
ディングパッド部１６は、化合物半導体結晶１２の陽極
酸化膜２４上にバッファ層２６を形成し、このバッファ
層２６上に金属層２８を積層して構成される。更に、電
極配線３０をボンディングパッド部１６の金属層２８と
同一金属で該金属層に連続して化合物半導体装置１２上
に形成する。A compound semiconductor crystal 12 is bonded onto the substrate 10 with an adhesive 13, and a light receiving section 14 and a bonding pad section 16 are formed on this compound semiconductor crystal 12. The bonding pad portion 16 is constructed by forming a buffer layer 26 on the anodic oxide film 24 of the compound semiconductor crystal 12, and laminating a metal layer 28 on the buffer layer 26. Further, an electrode wiring 30 is formed of the same metal as the metal layer 28 of the bonding pad section 16 and continuous to the metal layer on the compound semiconductor device 12.
製造方法としては、バッファ層２６をメタルマスクを用
いて形成し、このバッファ層２６上及び化合物半導体結
晶１２上に、ボンディングパッド部１６の金属層２８及
び電極配線３０をリフトオフ法により形成する。As a manufacturing method, the buffer layer 26 is formed using a metal mask, and the metal layer 28 and electrode wiring 30 of the bonding pad section 16 are formed on the buffer layer 26 and the compound semiconductor crystal 12 by a lift-off method.
作 用
ボンディングパッド部１６の金属層２８をバッファ層２
８を介して化合物半導体結晶１２上に形成しているので
、信号取り出し用のボンディングワイヤを超音波ボンデ
ィングによりボンディングパッド部１６の金属層２８に
取り付けても、超音波がバッファ層２６で吸収されるた
め、化合物半導体結晶１２が破壊されることは無い。ま
た、ボンディングパッド部１６を化合物半導体結晶１２
上に形成しているため、電極配線３０を従来構造のよう
に段差に沿って形成する必要が無く、電極配線の断線を
防止することができる。更に、電極配線３０をボンディ
ングパッド部１６の金属層２８と同一金属で該金属層に
連続して形成しているため、ボンディングパッド部と電
極配線とのコンタクト不良を完全に防止できる。Function: The metal layer 28 of the bonding pad portion 16 is replaced with the buffer layer 2.
Since it is formed on the compound semiconductor crystal 12 via the buffer layer 8, even if a bonding wire for signal extraction is attached to the metal layer 28 of the bonding pad portion 16 by ultrasonic bonding, the ultrasonic wave is absorbed by the buffer layer 26. Therefore, the compound semiconductor crystal 12 is not destroyed. Further, the bonding pad portion 16 is connected to the compound semiconductor crystal 12.
Since the electrode wiring 30 is formed above, there is no need to form the electrode wiring 30 along the step unlike in the conventional structure, and disconnection of the electrode wiring can be prevented. Furthermore, since the electrode wiring 30 is made of the same metal as the metal layer 28 of the bonding pad portion 16 and is formed continuously thereto, contact failure between the bonding pad portion and the electrode wiring can be completely prevented.
実 施 例 以下本発明の実施例を図面に基づいて詳細に説明する。Example Embodiments of the present invention will be described in detail below based on the drawings.
第２図は本発明実施例の斜視図を示しており、サファイ
ヤ基板１０上にはＨｇＣｄＴｅ等の化合物半導体結晶１
２がストライプ状に接着剤により接着されている。化合
物半導体結晶１２の一端にはアースに接続する共通アー
スパッド部１１が設けられており、他端にはボンディン
グワイヤを接続して信号を取り出すボンディングパッド
部１６が設けられている。ボンディングパッド部１６は
互い違いになるように設けられている。FIG. 2 shows a perspective view of an embodiment of the present invention, in which a compound semiconductor crystal 1 such as HgCdTe is placed on a sapphire substrate 10.
2 are glued together in stripes with adhesive. A common ground pad section 11 connected to the ground is provided at one end of the compound semiconductor crystal 12, and a bonding pad section 16 is provided at the other end to which a bonding wire is connected to extract a signal. The bonding pad portions 16 are provided alternately.
第３図は第２図のＩ−ＩＩＩ線断面図、第４図は第２図
のＩＶ−ＩＶ線断面図であり、以下第３図及び第４図を
参照して本実施例の素子構造について説明する。3 is a sectional view taken along the line I-III in FIG. 2, and FIG. 4 is a sectional view taken along the line IV-IV in FIG. I will explain about it.
化合物半導体結晶１２上には受光部１４及びボンディン
グパッド部１６が設けられている。A light receiving section 14 and a bonding pad section 16 are provided on the compound semiconductor crystal 12.
ボンディングパッド部１６には化合物半導体結晶１２の
陽極酸化膜２４が形成されており、その上に超音波ボン
ディング時の衝撃を吸収するためのバッファ層の役目を
するＺｎＳ膜２６がメタルマスクを用いて蒸着されてい
る。ＺｎＳｎＳ膜上６上膜厚５００Å以下のＣｒ膜３２
が積層されている。このＣｒ膜３２は化合物半導体結晶
１２上にも連続して形成されて奢り、電極配線３０の下
地を構成している。Ｃｒ膜３２上には膜厚１５００Å以
下のＮｉ膜膜種４積層されており、このＮｌ膜３４も電
極配線３０の一部を構成するように延設されている。更
にＮｉ膜３４上には膜厚８０００Å以下のＡｕ膜３６が
積層されており、ボンディングパッド部１６の最上層を
構成している。An anodic oxide film 24 of the compound semiconductor crystal 12 is formed on the bonding pad portion 16, and a ZnS film 26, which serves as a buffer layer to absorb shock during ultrasonic bonding, is formed on the anodic oxide film 24 using a metal mask. It is vapor deposited. Cr film 32 with a thickness of 500 Å or less on the ZnSnS film 6
are layered. This Cr film 32 is also continuously formed on the compound semiconductor crystal 12 and forms the base of the electrode wiring 30. On the Cr film 32, four kinds of Ni films each having a thickness of 1500 Å or less are laminated, and this Nl film 34 is also extended so as to constitute a part of the electrode wiring 30. Further, an Au film 36 having a thickness of 8000 Å or less is laminated on the Ni film 34, and constitutes the uppermost layer of the bonding pad portion 16.
Ａｕ膜３６も電極配線３０の最上層を構成するように延
設されている。The Au film 36 is also extended to form the uppermost layer of the electrode wiring 30.
Ｃｒ膜３２、Ｎｉ膜膜種４Ａｕ膜３６はポジレジストを
用いたリフトオフ法により形成する。ポジレジストを用
いるのはアセトン等の有機溶剤により容易に形成（リフ
トオフ）できるためである。The Cr film 32, Ni film type 4, and Au film 36 are formed by a lift-off method using a positive resist. The reason why a positive resist is used is that it can be easily formed (lifted off) using an organic solvent such as acetone.
Ｃｒ膜３２は上部のＮｉ膜膜種４の密着を良くするため
に設けられており、Ｎｉ膜膜種４上部のＡＵ膜３６の密
着を良くするため及びボンディングを容易にするために
設けられており、最上層のＡＵ膜３６はボンディングを
容易にするために設けられている。The Cr film 32 is provided to improve the adhesion of the upper Ni film type 4, and is provided to improve the adhesion of the AU film 36 on the upper part of the Ni film type 4 and to facilitate bonding. The top layer AU film 36 is provided to facilitate bonding.
上述した素子構造で超音波ボンディングを行ったところ
、ボンディング歩留り９５％以上、ボンディング強度４
〜５ｇが得られ、充分実用に耐え得るものであった。When ultrasonic bonding was performed on the above-mentioned element structure, the bonding yield was 95% or more, and the bonding strength was 4.
~5 g was obtained, which was sufficient for practical use.
発明の効果
本発明の素子構造は以上詳述したように、化合物半導体
上にボンディングパッド部を形成したので、従来構造の
ように電極配線部に大きな段差部が生じることが無く、
電極配線部の断線を有効に防止できるという効果を奏す
る。またボンディングパッド部の金属層と同一金属で電
極配線部を形成しているため、ボンディングパッド部と
電極配線部との間でコンタクト不良、コンタクト抵抗等
を生じることが無い。更に、製造プロセスが平面上で行
われるため、プロセスを簡素化できるという効果もある
。Effects of the Invention As described in detail above, in the device structure of the present invention, the bonding pad portion is formed on the compound semiconductor, so unlike the conventional structure, large step portions do not occur in the electrode wiring portion.
This has the effect of effectively preventing disconnection of the electrode wiring portion. Further, since the electrode wiring portion is formed of the same metal as the metal layer of the bonding pad portion, contact failure, contact resistance, etc. will not occur between the bonding pad portion and the electrode wiring portion. Furthermore, since the manufacturing process is performed on a flat surface, there is an advantage that the process can be simplified.
第１図は本発明方法の原理図、
第２図は本発明一実施例の斜視図、
第３図は第２図の■−■線断面図、
第４図は第２図のＩ’Ｖ−１’Ｖ線断面図、第５図は従
来例断面図である。
０・・・基板、 １２・・・化合物半導体結晶、４
・・・受光部、 １６・・・ボンディングパッド部、
８．２４・・・陽極酸化膜、
０・・・ＺｎＳ反射防止膜、
２・・・遮光膜、 ２６・・・バッファ層、８・・・金
属層、 ３０・・・電極配線。
う【 姥 イグリ 余ヰ ヨを貝−βｎ第２図
苓扱
化争オ勿半尊イ番辛ケ＾
受尤＃下
オ、゛ンナ“−イ・ンク゛ｒ得トＪ
＼゛・ファ漕
４ヒＡ１
電稜配Ｉ！Ｌ
ネ 姶 ヨ月 の刃−理 図
第１図
１２・化腎特牛厚俸惇昆
１４、命尤（Ｔ
１６ 方パンラ′インク゛ＩＸ’・ド１シ“下２６
・ ＺｎＳ 月爽
３ｏ：電極層↑良
環２図／）Ｎ−ＩＳ７線町面図
第４図Figure 1 is a principle diagram of the method of the present invention, Figure 2 is a perspective view of an embodiment of the present invention, Figure 3 is a sectional view taken along the line ■-■ in Figure 2, and Figure 4 is I'V in Figure 2. A sectional view taken along the line -1'V, and FIG. 5 is a sectional view of a conventional example. 0...Substrate, 12...Compound semiconductor crystal, 4
... Light receiving part, 16... Bonding pad part,
8.24... Anodized film, 0... ZnS antireflection film, 2... Light shielding film, 26... Buffer layer, 8... Metal layer, 30... Electrode wiring. U [ 入 Igri Yui Yo wo shell - βn 2nd figure 蓓 treated as a dispute O, of course, it's hard ke ＾ Received # lower O, ゛ nna `` - I Nk ゛ r to get J \゛ Fa row 4 hiA1 Electric ridge arrangement I!L ne 姶 YO月の Blade-ri Figure 1 Figure 12・Kaneki Tokugyu Atsushi Junkon 14, Life (T 16 Way Panra'Ink゛IX'・Do1shi"Bottom 26
・ZnS Tsukisou 3o: Electrode layer ↑ Ryokan 2 Figure/) N-IS7 line town map Figure 4
Claims (2)
ングパッド部（１６）を有する化合物半導体結晶を用い
た赤外線検知素子の素子構造において、ボンディングパ
ッド部（１６）を基板（１０）に接着された化合物半導
体結晶（１２）上にバッファ層（２６）及び金属層（２
８）を積層して形成するとともに、電極配線（３０）を
ボンディングパッド部（１６）の金属層（２８）と同一
金属で該金属層に連続して化合物半導体結晶（１２）上
に形成したことを特徴とする赤外線検知素子の素子構造
。(1) In the element structure of an infrared sensing element using a compound semiconductor crystal having a light receiving part (14), an electrode wiring (30) and a bonding pad part (16), the bonding pad part (16) is bonded to the substrate (10). A buffer layer (26) and a metal layer (2) are formed on the compound semiconductor crystal (12).
8) is formed by laminating them, and the electrode wiring (30) is made of the same metal as the metal layer (28) of the bonding pad portion (16) and is formed continuously on the compound semiconductor crystal (12). An element structure of an infrared sensing element characterized by:
２）上にメタルマスクを用いてバッファ層（２６）を形
成し、 該バッファ層（２６）上及び化合物半導体結晶（１２）
上にボンディングパッド部（１６）の金属層（２８）及
び電極配線（３０）をリフトオフ法により形成すること
を特徴とする請求項１記載の赤外線検知素子の製造方法
。(2) Compound semiconductor crystal (1) adhered to the substrate (10)
2) Form a buffer layer (26) using a metal mask on the buffer layer (26) and the compound semiconductor crystal (12).
2. The method of manufacturing an infrared sensing element according to claim 1, wherein the metal layer (28) of the bonding pad portion (16) and the electrode wiring (30) are formed thereon by a lift-off method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63166793A JPH0738450B2 (en) | 1988-07-06 | 1988-07-06 | Element structure of infrared detection element and manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63166793A JPH0738450B2 (en) | 1988-07-06 | 1988-07-06 | Element structure of infrared detection element and manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0217678A true JPH0217678A (en) | 1990-01-22 |
| JPH0738450B2 JPH0738450B2 (en) | 1995-04-26 |
Family
ID=15837777
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63166793A Expired - Lifetime JPH0738450B2 (en) | 1988-07-06 | 1988-07-06 | Element structure of infrared detection element and manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0738450B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6873025B2 (en) * | 2000-10-31 | 2005-03-29 | Sharp Kabushiki Kaisha | Photodiode device including window defined in passivation layer for removing electrostatic charge |
-
1988
- 1988-07-06 JP JP63166793A patent/JPH0738450B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6873025B2 (en) * | 2000-10-31 | 2005-03-29 | Sharp Kabushiki Kaisha | Photodiode device including window defined in passivation layer for removing electrostatic charge |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0738450B2 (en) | 1995-04-26 |
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