JPH0217101B2 - - Google Patents
Info
- Publication number
- JPH0217101B2 JPH0217101B2 JP11477284A JP11477284A JPH0217101B2 JP H0217101 B2 JPH0217101 B2 JP H0217101B2 JP 11477284 A JP11477284 A JP 11477284A JP 11477284 A JP11477284 A JP 11477284A JP H0217101 B2 JPH0217101 B2 JP H0217101B2
- Authority
- JP
- Japan
- Prior art keywords
- selenium
- cyclic
- photoreceptor
- raw material
- photosensitive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 37
- 229910052711 selenium Inorganic materials 0.000 claims description 36
- 239000011669 selenium Substances 0.000 claims description 36
- 125000004122 cyclic group Chemical group 0.000 claims description 19
- 108091008695 photoreceptors Proteins 0.000 claims description 16
- 239000002994 raw material Substances 0.000 claims description 16
- 230000008020 evaporation Effects 0.000 claims description 12
- 238000001704 evaporation Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000007740 vapor deposition Methods 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 25
- 229910045601 alloy Inorganic materials 0.000 description 12
- 239000000956 alloy Substances 0.000 description 12
- 229910018110 Se—Te Inorganic materials 0.000 description 7
- 238000010791 quenching Methods 0.000 description 4
- 230000000171 quenching effect Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000009477 glass transition Effects 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000007847 structural defect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910001370 Se alloy Inorganic materials 0.000 description 1
- 229910001215 Te alloy Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005421 electrostatic potential Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
Description
【発明の詳細な説明】
〔発明の属する技術分野〕
本発明はセレンを主成分とする材料からなる感
光層を有する電子写真用感光体およびその製造方
法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of the Invention] The present invention relates to an electrophotographic photoreceptor having a photosensitive layer made of a material containing selenium as a main component, and a method for manufacturing the same.
電子写真用セレン感光体の特性としては、暗時
に感光層に印加された表面電荷(帯電電位)を十
分に保持し、かつ光露光時にはその表面電荷が速
やかに消失することが望ましく、またこの帯電露
光を繰り返した時の露光後の感光体電位、すなわ
ち残留電位(疲労特性)が増加しないことが要求
される。なぜなら、残留電位の高いものは実際の
画像において地汚れ、濃度低下、ゴースト等の現
像が現われ、連続複写によつて画像品質の低下を
来す。疲労の原因としては、光照射時に発生した
キヤリアの輸送中にトラツプ準位に捕獲されるこ
とが挙げられる。このトラツプ準位密度の高い感
光層ほど残留電位が高く、繰り返し画像形成を行
う過程でこの残留電位が蓄積されて画像品質の低
下を招く。
As for the characteristics of a selenium photoreceptor for electrophotography, it is desirable that the surface charge (electrostatic potential) applied to the photosensitive layer be sufficiently retained in the dark, and that the surface charge be quickly dissipated during light exposure. It is required that the potential of the photoreceptor after exposure, that is, the residual potential (fatigue characteristics), does not increase when exposure is repeated. This is because, if the residual potential is high, development such as scumming, density reduction, and ghosting will appear in actual images, resulting in deterioration of image quality due to continuous copying. The cause of fatigue is that carriers generated during light irradiation are captured in a trap level during transport. The higher the trap level density of the photosensitive layer, the higher the residual potential, and during the process of repeated image formation, this residual potential is accumulated, leading to a decrease in image quality.
本発明は、これに対し繰り返し画像形成に際し
ても残留電位の上昇の少ない疲労特性のすぐれた
電子写真用セレン感光体を提供することを目的と
する。
In contrast, it is an object of the present invention to provide a selenium photoreceptor for electrophotography that exhibits excellent fatigue characteristics and exhibits little increase in residual potential even during repeated image formation.
本発明は、トラツプ準位がセレンの構造欠陥に
基づくとの認識から発し、構造欠陥すなわちダン
グリングボンドを減少するために、セレン同素体
のうちの環状セレンに富む感光層を形成すること
によつて末端基をつぶすものである。本発明によ
れば、感光層はキヤリア輸送に関与する層が60%
以上の環状セレン含有率を有する。キヤリア輸送
に関与する層とは、単層感光層では感光層全体、
機能分離型感光層ではキヤリア輸送層を意味す
る。60%以上の環状セレン含有率を有する層は、
75%以上の環状セレン含有率を有するセレン材料
を蒸発原料として蒸着することにより製造するこ
とができる。
The present invention originates from the recognition that trap levels are based on structural defects in selenium, and in order to reduce structural defects, that is, dangling bonds, by forming a photosensitive layer rich in cyclic selenium among selenium allotropes. It crushes the terminal group. According to the present invention, 60% of the photosensitive layer is a layer involved in carrier transport.
It has the above cyclic selenium content. The layers involved in carrier transport include the entire photosensitive layer in the case of a single layer photosensitive layer;
In the functionally separated photosensitive layer, it means a carrier transport layer. A layer with a cyclic selenium content of 60% or more is
It can be produced by vapor depositing a selenium material having a cyclic selenium content of 75% or more as an evaporation raw material.
蒸着に用いるセレン材料純セレンあるいは所定
の組成をもつセレン合金を融解槽から低温液体、
例えば純水中に滴下して急冷固化させ、粒状にし
たものを用いる。第1図はセレン蒸着材料の環状
セレン含有率を急冷温度(急冷固化直前のセレン
融体温度)との関係Aならびに環状セレン含有率
とガラス転位点Bおよび製造された感光体の残留
電位との関係Cを示す。感光体の感光層はアルミ
ニウム円筒基体上に5.5%のTeを含むSe−Te合
金よりなる厚さ55μmのキヤリア輸送層と、13.5
%のTeを含むSe−Te合金よりなる厚さ5μmのキ
ヤリア発生層とからなり、それぞれ10-5Torrの
真空槽中で50℃に加熱した基体上に320℃に加熱
した蒸発源から蒸発した材料の蒸着により形成さ
れた。残留電位は1000回繰り返し複写後の値を示
す。
Selenium material used for vapor deposition Pure selenium or a selenium alloy with a specified composition is transferred from a melting tank to a low-temperature liquid.
For example, it may be dropped into pure water, rapidly solidified, and made into granules. Figure 1 shows the relationship A between the cyclic selenium content of the selenium vapor deposition material and the quenching temperature (selenium melt temperature immediately before quenching and solidification), and the relationship between the cyclic selenium content and the glass transition point B and the residual potential of the manufactured photoreceptor. Relationship C is shown. The photosensitive layer of the photoreceptor has a carrier transport layer with a thickness of 55 μm made of Se-Te alloy containing 5.5% Te on an aluminum cylindrical substrate, and a carrier transport layer with a thickness of 13.5 μm.
% of Te and a 5 μm thick carrier generation layer made of Se-Te alloy, each of which was evaporated from an evaporation source heated to 320°C on a substrate heated to 50°C in a vacuum chamber at 10 -5 Torr. Formed by vapor deposition of material. The residual potential shows the value after repeated copying 1000 times.
第2図は蒸発原料中の環状セレン含有率と蒸着
層中の環状セレン含有率の関係を示す。第1図c
から明らかなように、蒸発原料中の環状セレン含
有率が高くなると残留電位が低下し、これは第2
図から明らかなように蒸着層中の環状セレン含有
率も高くなることによる。感光体の残留電位を
40V以下にするには、蒸発原料中の環状セレン含
有率が75%以上で、蒸着された感光層中の環状セ
レン含有率が60%以上であることを要する。 FIG. 2 shows the relationship between the cyclic selenium content in the evaporated raw material and the cyclic selenium content in the vapor deposited layer. Figure 1c
As is clear from the above, as the cyclic selenium content in the evaporated raw material increases, the residual potential decreases, and this is due to the second
As is clear from the figure, the cyclic selenium content in the deposited layer also increases. The residual potential of the photoreceptor
In order to achieve a voltage of 40 V or less, the cyclic selenium content in the evaporation raw material must be 75% or more, and the cyclic selenium content in the vapor-deposited photosensitive layer must be 60% or more.
このような高い環状セレン含有率を有するセレ
ン原料は第1図Aから明らかなように300℃以下
の温度で融解したセレン材料を急冷固化して製造
することが必要である。 As is clear from FIG. 1A, a selenium raw material having such a high cyclic selenium content must be produced by rapidly cooling and solidifying a selenium material melted at a temperature of 300° C. or less.
第3図は従来の蒸発原料製造装置を示し、融解
槽1の中にSe−Te合金2を入れ、槽内の雰囲気
をフアン3で撹拌しながら、ヒータ4によりSe
−Te合金2を融解する。Se−Te合金2は熱電対
(温度検出器)5によりヒータ4の入力を制御し
て400℃において融解したのち、温度が370℃にな
つた時ノズル6から純水7中に滴下させて粒状の
セレン蒸発原料を得る。この場合合金の温度は次
第に低下して最後には320℃程度になる。このよ
うな装置で蒸発原料を製造する際、融体5の温度
を250℃にするとノズルネツク61の壁に接する
部分は凝固してしまうので急冷温度を低くするこ
とは困難である。 FIG. 3 shows a conventional evaporation raw material manufacturing apparatus, in which a Se-Te alloy 2 is placed in a melting tank 1, and while the atmosphere inside the tank is stirred by a fan 3, a heater 4 is used to heat the Se-Te alloy.
-Te alloy 2 is melted. The Se-Te alloy 2 is melted at 400°C by controlling the input to the heater 4 using a thermocouple (temperature detector) 5. When the temperature reaches 370°C, it is dropped into pure water 7 from a nozzle 6 to form granules. Selenium evaporation raw material is obtained. In this case, the temperature of the alloy gradually decreases to about 320°C. When producing evaporated raw materials using such an apparatus, it is difficult to lower the quenching temperature because if the temperature of the melt 5 is set to 250° C., the portion of the nozzle neck 61 in contact with the wall will solidify.
第4図は本発明に基づく蒸発原料製造のための
装置の一例を示し、第3図と共通の部分には同一
の符号が付されている。この場合フアン3は融解
合金2の中に浸漬され、融解合金を撹拌して温度
を均一にすることができる。またノズル6にも熱
電対(温度検出器)5aを取り付け、ノズルネツ
ク61に巻いたヒータ41の入力を制御してノズ
ルネツク61内において合金2が凝固しないよう
にする。この結果、合金を400℃において融解さ
せたのち250℃の温度まで下げ、ノズル6から純
水中に滴下して環状セレン含有率の高い蒸発原料
を得ることができる。なお融解槽2内の雰囲気お
よびノズル6と純水7の間の雰囲気を窒素雰囲気
にすることは、蒸発原料および感光層中の酸素含
有率を低下させ、残留電位を低くするのに有効で
ある。 FIG. 4 shows an example of an apparatus for producing evaporative raw materials according to the present invention, and parts common to those in FIG. 3 are given the same reference numerals. In this case, the fan 3 is immersed in the molten alloy 2 and can stir the molten alloy to make the temperature uniform. A thermocouple (temperature detector) 5a is also attached to the nozzle 6, and the input to the heater 41 wound around the nozzle neck 61 is controlled to prevent the alloy 2 from solidifying within the nozzle neck 61. As a result, the alloy is melted at 400° C., then lowered to 250° C., and dropped into pure water from the nozzle 6 to obtain an evaporated raw material with a high cyclic selenium content. Note that setting the atmosphere in the melting tank 2 and the atmosphere between the nozzle 6 and the pure water 7 to be a nitrogen atmosphere is effective in reducing the oxygen content in the evaporation raw material and the photosensitive layer and lowering the residual potential. .
第5図は第3図および第4図の装置により製造
した蒸発原料をそれぞれ用いて感光層を蒸着した
感光体の疲労特性を示す。鎖線11,12はそれ
ぞれ第4図の装置により製造したSe−Te合金を
用いて前述のようなキヤリア輸送層を形成した本
発明の実施例の感光体で、線11は残留電位、線
12は露光前帯電位を示し、実線21,22は第
3図の装置により製造したSe−Te合金を用いて
キヤリア輸送層を形成した比較例の感光体で線2
1は残留電位、線22は露光前帯電位を示す。 FIG. 5 shows the fatigue characteristics of photoreceptors in which photosensitive layers were deposited using the evaporation materials produced by the apparatuses shown in FIGS. 3 and 4, respectively. Dashed lines 11 and 12 indicate the photoreceptor of the embodiment of the present invention in which the carrier transport layer as described above was formed using the Se-Te alloy manufactured by the apparatus shown in FIG. The solid lines 21 and 22 indicate the charged potential before exposure, and the solid lines 21 and 22 represent the photoconductor of a comparative example in which the carrier transport layer was formed using a Se-Te alloy manufactured by the apparatus shown in FIG.
1 indicates the residual potential, and line 22 indicates the pre-exposure charge potential.
本発明は、セレン材料からなる感光層の環状セ
レン含有率を0%以上とすることにより低疲労で
地汚れ、ゴースト等がない画像が得られ、連続繰
り返し画像形成による濃度低下の少ない電子写真
用感光体を得るものである。このような感光体
は、感光層の蒸着に用いる蒸発原料の環状セレン
含有率を75%以上にすることにより容易に形成で
き、疲労特性の良好な感光体としてPPC複写機、
プリンタあるいはインテリジエント複写機等に極
めて有効に使用できる。
The present invention provides a photosensitive layer made of a selenium material with a cyclic selenium content of 0% or more, thereby making it possible to obtain images with low fatigue and free from background smudges, ghosts, etc., and to reduce density loss due to continuous repeated image formation for use in electrophotography. A photoreceptor is obtained. Such a photoreceptor can be easily formed by increasing the cyclic selenium content of the evaporation raw material used for vapor deposition of the photosensitive layer to 75% or more, and is used as a photoreceptor with good fatigue characteristics in PPC copying machines,
It can be used extremely effectively in printers, intelligent copying machines, etc.
第1図はセレン材料の分子構造と急冷温度、ガ
ラス転移点および残留電位との関係を示す線図、
第2図は蒸発原料と蒸着膜における環状セレン含
有率を示す線図、第3図は従来の蒸発原料製造装
置、第4図は本発明実施のための蒸発原料製造装
置のそれぞれの一例を示す断面図、第5図は本発
明の一実施例と従来例の感光体の疲労特性線図で
ある。
Figure 1 is a diagram showing the relationship between the molecular structure of selenium materials, quenching temperature, glass transition point, and residual potential.
Figure 2 is a diagram showing the cyclic selenium content in the evaporation raw material and the deposited film, Figure 3 is a conventional evaporation raw material manufacturing apparatus, and Figure 4 is an example of the evaporation raw material manufacturing apparatus for implementing the present invention. The cross-sectional view and FIG. 5 are fatigue characteristic diagrams of a photoreceptor according to an embodiment of the present invention and a conventional example.
Claims (1)
有するものにおいて、感光層のうちキヤリア輸送
に関与する層が60%以上の環状セレンを含有する
ことを特徴とする電子写真用感光体。 2 感光層のうちキヤリア輸送に関与する層を、
75%以上の環状セレンを含有するセレンを主成分
とした蒸発原料を用いて蒸着して形成することを
特徴とする電子写真用感光体の製造方法。[Scope of Claims] 1. Electrophotography having a photosensitive layer made of a material containing selenium as a main component, characterized in that a layer involved in carrier transport in the photosensitive layer contains 60% or more of cyclic selenium. Photoreceptor for use. 2 Among the photosensitive layers, the layer involved in carrier transport is
1. A method for producing an electrophotographic photoreceptor, characterized in that the electrophotographic photoreceptor is formed by vapor deposition using a selenium-based evaporation raw material containing 75% or more of cyclic selenium.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11477284A JPS60258557A (en) | 1984-06-05 | 1984-06-05 | Electrophotographic sensitive body and its production |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11477284A JPS60258557A (en) | 1984-06-05 | 1984-06-05 | Electrophotographic sensitive body and its production |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60258557A JPS60258557A (en) | 1985-12-20 |
JPH0217101B2 true JPH0217101B2 (en) | 1990-04-19 |
Family
ID=14646301
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11477284A Granted JPS60258557A (en) | 1984-06-05 | 1984-06-05 | Electrophotographic sensitive body and its production |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60258557A (en) |
-
1984
- 1984-06-05 JP JP11477284A patent/JPS60258557A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS60258557A (en) | 1985-12-20 |
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