JPH0216553Y2 - - Google Patents
Info
- Publication number
- JPH0216553Y2 JPH0216553Y2 JP675484U JP675484U JPH0216553Y2 JP H0216553 Y2 JPH0216553 Y2 JP H0216553Y2 JP 675484 U JP675484 U JP 675484U JP 675484 U JP675484 U JP 675484U JP H0216553 Y2 JPH0216553 Y2 JP H0216553Y2
- Authority
- JP
- Japan
- Prior art keywords
- surge absorbing
- absorbing element
- surge
- metal oxide
- resistance element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910044991 metal oxide Inorganic materials 0.000 claims description 30
- 150000004706 metal oxides Chemical class 0.000 claims description 30
- 239000011521 glass Substances 0.000 claims description 19
- 238000010521 absorption reaction Methods 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 13
- 239000011253 protective coating Substances 0.000 claims description 10
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 4
- 239000000395 magnesium oxide Substances 0.000 claims description 4
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000001569 carbon dioxide Substances 0.000 claims description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 2
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 150000002927 oxygen compounds Chemical class 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 2
- 229910001887 tin oxide Inorganic materials 0.000 claims description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
- 229910001882 dioxygen Inorganic materials 0.000 claims 1
- 230000001681 protective effect Effects 0.000 description 11
- 239000002131 composite material Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Description
【考案の詳細な説明】
本考案は、金属酸化物より成る高抵抗体素子と
放電ギヤツプとの複合構造を有し、バリスタ及び
アレスタの両長所を兼ね備えたサージ吸収素子に
於ける金属酸化物高抵抗体素子の保護構造に係
り、特に脱鉛ガラスと金属酸化物との重層構造を
有する保護被膜を高抵抗体素子の表面に形成する
ことにより、サージ吸収特性の安定化を計つたサ
ージ吸収素子に関する。[Detailed description of the invention] The present invention has a composite structure of a high resistance element made of a metal oxide and a discharge gap, and has the advantages of both a varistor and an arrester. A surge absorbing element that is related to the protective structure of a resistor element, and that stabilizes surge absorption characteristics by forming a protective film with a multilayer structure of lead-free glass and metal oxide on the surface of a high-resistance element. Regarding.
従来より、電子回路に加わる過渡的なサージ電
圧や雷撃等から電子回路素子を保護するため、電
圧非直線特性を有する金属酸化物の高抵抗体素子
より成るバリスタや放電ギヤツプを気密容器に収
容したアレスタ等のサージ吸収素子が広く使用さ
れている。しかし、上述のバリスタは、サージに
対する応答速度が速い（10-9秒程度）反面、電流
耐量が小さいので耐量を増す為に形状が大きくな
り、また静電容量が大きい（200〜800PF程度）
ため、自励発振を生じたり、正規の信号波形を歪
せたりする等の欠点がある。一方、アレスタは、
電流耐量が大きく、また静電容量が小さい（２〜
5PF程度）等の長所を有する反面、サージに対す
る応答速度が遅い（10-6秒程度）ので、急峻なサ
ージに対しては電子回路を保護しきれないという
欠点がある。 Traditionally, varistors and discharge gaps made of high-resistance metal oxide elements with non-linear voltage characteristics have been housed in airtight containers in order to protect electronic circuit elements from transient surge voltages and lightning strikes applied to electronic circuits. Surge absorbing elements such as arresters are widely used. However, although the above-mentioned varistor has a fast response speed to surges (about 10 -9 seconds), its current withstand capacity is small, so the shape has to be large to increase the withstand capacity, and the capacitance is large (about 200 to 800 PF).
Therefore, there are drawbacks such as self-sustained oscillation and distortion of the normal signal waveform. On the other hand, the arrester
The current withstand capacity is large and the capacitance is small (2~
On the other hand, the response speed to surges is slow (about 10 -6 seconds), so it has the disadvantage that electronic circuits cannot be fully protected against steep surges.
そこで、これらの従来のサージ吸収素子の欠点
を解消し、バリスタとアレスタとの両長所を兼ね
備えたものとして、本考案者等は、既に第１図に
示すサージ吸収素子を提案（特許願昭58−30357）
している。上記サージ吸収素子１は、図示の如く
高抵抗体素子２を基体として、その外周部に、外
部リード線３，３′を設けた電極４，４′を放電間
隙５を隔てて相対向させて接続し、これを気密容
器７中に収容し、更に容器７の内部に放電に供す
るガス媒質８を封入した構成を有するものであ
り、過渡的にサージ電圧が印加された状態では、
高抵抗体素子２の抵抗値とサージ電流値との積に
よる電圧降下により電極４，４′間に励起放電を
生成させ、その付勢によつて瞬時に大電流を通ず
る主放電に転移させて、高速度でサージ電流を吸
収するものである。上記サージ吸収素子は、バリ
スタやアレスタに比べ、サージに対する応答速度
が速く、また静電容量が小さく、形状も小型にで
き、しかも電流耐量が大きい等の優れた特性を有
するものである。しかしながら、上記サージ吸収
素子の基体である高抵抗体素子として電圧直線特
性あるいは電圧非直線特性を有する金属酸化物を
選定した場合には、その製造工程中及び使用中に
於いて、高抵抗体素子の抵抗値あるいは電圧非直
線係数の変化によつて制限電圧が変動してしま
い、サージ吸収特性が不安定になるという問題が
生じた。これは、上記サージ吸収素子にあつて
は、電極間の放電特性を安定させるために、その
製造工程に於いて気密容器内を真空にして加熱す
る所謂真空ベーキングによつて構成部材の脱ガス
を行う必要があり、また使用状態に於いては、電
極間の放電による放電雰囲気に高抵抗体素子がさ
らされることになり、これらの温度やイオンによ
る衝撃が金属酸化物を還元し、高抵抗体素子の抵
抗値や電圧非直線係数等の特性を変動させること
に起因している。 Therefore, in order to eliminate the drawbacks of these conventional surge absorption elements and combine the advantages of both varistors and arresters, the inventors of the present invention have already proposed the surge absorption element shown in Fig. 1 (patent application No. 58). −30357)
are doing. As shown in the figure, the surge absorbing element 1 has a high-resistance element 2 as a base body, and electrodes 4 and 4' provided with external lead wires 3 and 3' on the outer periphery thereof are arranged facing each other across a discharge gap 5. It has a structure in which it is connected and housed in an airtight container 7, and further a gas medium 8 for discharging is sealed inside the container 7. When a surge voltage is transiently applied,
An excited discharge is generated between the electrodes 4 and 4' due to a voltage drop caused by the product of the resistance value of the high resistance element 2 and the surge current value, and by the energization, it is instantaneously transferred to a main discharge through which a large current flows. , which absorbs surge currents at high speed. The above-mentioned surge absorbing element has excellent characteristics, such as a faster response speed to a surge, a smaller capacitance, a smaller size, and a larger current capacity than a varistor or an arrester. However, if a metal oxide with voltage linear characteristics or voltage non-linear characteristics is selected as the high resistance element which is the base of the surge absorbing element, the high resistance element may be damaged during the manufacturing process and during use. The problem arises that the limiting voltage fluctuates due to changes in the resistance value or the voltage nonlinear coefficient, making the surge absorption characteristics unstable. This is because, in order to stabilize the discharge characteristics between the electrodes, the surge absorbing element described above uses so-called vacuum baking, which heats the airtight container to create a vacuum, to degas the constituent members. In addition, during use, the high-resistance element is exposed to the discharge atmosphere caused by the discharge between the electrodes, and the impact of these temperatures and ions reduces the metal oxide, causing the high-resistance element to This is caused by varying characteristics such as the resistance value and voltage nonlinear coefficient of the element.
本考案は、上述の点に鑑みなされたもので、上
記サージ吸収素子の優れたサージ吸収特性を損な
うことなく金属酸化物の還元を防止し、制限電圧
の変動を防止して安定したサージ吸収特性を有す
るサージ吸収素子を提供することを目的とする。 The present invention was developed in view of the above points, and it prevents the reduction of metal oxides without impairing the excellent surge absorption characteristics of the surge absorption element, prevents fluctuations in the limiting voltage, and provides stable surge absorption characteristics. An object of the present invention is to provide a surge absorbing element having the following characteristics.
以上の目的達成のため本考案者等は、金属酸化
物より成る高抵抗体素子の表面に種々の物質を
種々の条件で被着させて保護被膜を形成して検討
した結果、耐熱・耐還元性の金属酸化物と更にこ
れを覆う脱鉛ガラスとより成る保護被膜を形成し
た場合に金属酸化物の還元を防止でき上記サージ
吸収素子の制限電圧が安定することを見い出して
本考案を完成させたものである。即ち、本考案の
サージ吸収素子は、金属酸化物より成る高抵抗体
素子の外周部に、放電間隙を隔てて相対向させた
電極を接続し、これを気密容器中に収容したサー
ジ吸収素子に於いて、高抵抗体素子の表面に脱鉛
ガラスより成る外層及び上記外層と化学的に不活
性な耐熱・耐還元性金属酸化物より成る内層との
重層構造を有する保護被膜を形成したことを特徴
とするものであり、以下図面に基づき本考案の一
実施例を説明する。 In order to achieve the above objectives, the present inventors formed a protective film by depositing various substances under various conditions on the surface of a high-resistance element made of metal oxide. They discovered that the reduction of the metal oxide can be prevented and the limiting voltage of the surge absorbing element can be stabilized by forming a protective film consisting of a lead-free glass and a lead-free glass covering the protective film, and have completed the present invention. It is something that That is, the surge absorbing element of the present invention connects electrodes facing each other across a discharge gap to the outer periphery of a high-resistance element made of metal oxide, and connects this to the surge absorbing element housed in an airtight container. In this case, a protective film having a multilayer structure consisting of an outer layer made of lead-free glass and an inner layer made of a chemically inert heat-resistant and reduction-resistant metal oxide is formed on the surface of a high-resistance element. One embodiment of the present invention will be described below based on the drawings.
第２図は本考案の一実施例係るサージ吸収素子
を示すもので、第２図Ａは概略断面図、第２図Ｂ
は要部断面図であり、図に於いてサージ吸収素子
１は、金属酸化物より成る高抵抗体素子２の外周
部両端に、外部リード線３，３′を導出した一対
の電極４，４′を放電間隙５を隔てて相対向させ
て嵌着し、上記高抵抗体素子２の電極４，４′に
よつて覆われていない部分の表面に脱鉛ガラスよ
り成る外層６ａと金属酸化物より成る内層６ｂと
の重層構造を有する保護被膜６を形成し、これを
筒状部７ａの両端にキヤツプ７ｂ，７b′を固着し
て成る気密容器７内に収容した構造となつてお
り、更に容器７の内部に放電に供するガス媒質８
を封入するか、あるいは真空としている。 Fig. 2 shows a surge absorbing element according to an embodiment of the present invention, Fig. 2A is a schematic sectional view, and Fig. 2B is a schematic cross-sectional view.
1 is a sectional view of a main part, and in the figure, a surge absorbing element 1 has a pair of electrodes 4, 4, from which external lead wires 3, 3' are led out, at both ends of the outer peripheral part of a high resistance element 2 made of a metal oxide. ' are fitted facing each other across the discharge gap 5, and an outer layer 6a made of lead-free glass and a metal oxide are placed on the surface of the portion of the high-resistance element 2 that is not covered by the electrodes 4, 4'. A protective coating 6 having a multilayer structure with an inner layer 6b consisting of the above is formed, and this is housed in an airtight container 7 consisting of caps 7b and 7b' fixed to both ends of a cylindrical portion 7a. A gas medium 8 for electric discharge is provided inside the container 7.
encapsulated or in a vacuum.
上記保護被膜の内層６ｂは、例えば酸化マグネ
シウム（MgO）、酸化ケイ素（SiO2）、酸化スズ
（SnO2）若しくは酸化アルミニウム（Al2O3）等
の耐熱性及び耐還元性を有する金属酸化物の単体
又は複合体より成り、金属酸化物を溶剤と混合し
て液状或いはペースト状としたものをプリントや
塗布等により高抵抗体素子２の表面に被着し、こ
れを焼成するか、又は、蒸着等によつて金属被膜
を被着し、これを酸化して金属酸化物と成して形
成したものであり、また、上記保護被膜の外層６
ａは、酸化ビスマス（Bi2O3）を含有するビスマ
スガラス等の脱鉛ガラスより成り、脱鉛ガラスの
粉末を溶剤と混合してペースト状とし、これを上
記保護被膜の内層６ｂ上に被着、焼成して形成し
たものである。上記金属酸化物より成る内層６ｂ
及び脱鉛ガラスより成る外層６ａは、それぞれそ
れ自体で温度やイオンの衝撃から高抵抗体素子２
を保護する機能を有するものであるが、金属酸化
物より成る内層６ｂは、多孔質であるため耐候性
の点で問題があり、また脱鉛ガラスより成る外層
６ａは、耐候性に優れている反面、高抵抗体素子
２を構成する物質と化学反応を起こすため、高抵
抗体素子２を直接内層６ｂで被覆し、更に上記内
層６ｂを外層６ａで覆つて重層構造の保護被膜６
を形成しているものである。尚、上記内層６ｂを
構成する金属酸化物は、上記外層６ａを構成する
脱鉛ガラスと化学的に不活性であることが望まし
く、また、脱鉛ガラスに、高抵抗体素子２を構成
する物質と反応性の高いアルカリ分が含まれてい
ると、内層６ｂの多孔質の度合或いは厚さ等によ
つて高抵抗体素子２の特性に悪影響を及ぼす虞れ
があるので、保護被膜の外層６ａを構成する脱鉛
ガラスとしては、アルカリ分を含まないものを選
定することが望ましい。また、上記脱鉛ガラスに
は、鉛分が含まれていないため、サージ吸収の際
に電極４，４′間に生じる放電によつて鉛が析出
することがないので、鉛による電極間の短絡の虞
れがない。 The inner layer 6b of the protective film is made of a metal oxide having heat resistance and reduction resistance, such as magnesium oxide (MgO), silicon oxide (SiO 2 ), tin oxide (SnO 2 ), or aluminum oxide (Al 2 O 3 ). A metal oxide is mixed with a solvent to form a liquid or paste, which is applied to the surface of the high-resistance element 2 by printing or coating, and then baked. It is formed by depositing a metal film by vapor deposition or the like and oxidizing it to form a metal oxide, and the outer layer 6 of the protective film is
A is made of lead-free glass such as bismuth glass containing bismuth oxide (Bi 2 O 3 ), and powder of the lead-free glass is mixed with a solvent to form a paste, and this is coated on the inner layer 6b of the protective film. It is formed by depositing and firing. Inner layer 6b made of the above metal oxide
The outer layer 6a made of lead-free glass and lead-free glass protects the high-resistance element 2 from temperature and ion bombardment.
However, since the inner layer 6b made of metal oxide is porous, there is a problem in terms of weather resistance, and the outer layer 6a made of lead-free glass has excellent weather resistance. On the other hand, in order to cause a chemical reaction with the substance constituting the high-resistance element 2, the high-resistance element 2 is directly covered with the inner layer 6b, and the inner layer 6b is further covered with the outer layer 6a to form a protective coating 6 with a multilayer structure.
It is what forms the. The metal oxide constituting the inner layer 6b is preferably chemically inert to the lead-free glass constituting the outer layer 6a, and the metal oxide constituting the high-resistance element 2 is preferably chemically inert to the lead-free glass constituting the outer layer 6a. If a highly reactive alkali component is included, the characteristics of the high-resistance element 2 may be adversely affected depending on the degree of porosity or thickness of the inner layer 6b. It is desirable to select a lead-free glass that does not contain alkali. In addition, since the above-mentioned lead-free glass does not contain lead, lead will not be deposited due to the discharge that occurs between the electrodes 4 and 4' during surge absorption, so there will be no short circuit between the electrodes due to lead. There is no risk of
上記高抵抗体素子２は、例えばZnO，TiO2，
Fe2O3，SnO2等の電圧非直線特性を有する材料
から成る素子が適しているが、これに限定される
ことなく、電圧直線特性を有する素子や、基体の
電極と接する部分が電圧直線特性を有し、その他
の部分が電圧非直線特性を有する複合構造を有す
るものであつてもよい。また、本実施例では、対
向電極が一組の例を示したが、必要に応じて複数
組の対向電極を具備する構造と成すことも可能で
ある。更にその形状も上記実施例に示した円柱形
状以外に、第３図に示す如き円盤形状あるいは断
面が長円状や楕円状等任意の形状に採り得る。更
に、上記ガス媒質８は、He，Ne，Ar等の希ガ
ス、窒素ガス（N2）若しくは炭酸ガス（CO2）
の単体又は複合体のガス媒質が適しているが、酸
素若しくは酸素化合物又は両者の混合物より成る
ガス媒質を含むもの（例えばCO2＋N2）を使用
した場合には、金属酸化物の還元防止効果が増大
するものである。 The high resistance element 2 is made of, for example, ZnO, TiO 2 ,
Elements made of materials with voltage non-linear characteristics such as Fe 2 O 3 and SnO 2 are suitable, but are not limited to these. It may have a composite structure in which the other portions have voltage non-linear characteristics. Further, in this embodiment, an example is shown in which one set of counter electrodes is provided, but it is also possible to construct a structure including a plurality of sets of counter electrodes as necessary. In addition to the cylindrical shape shown in the above-mentioned embodiments, the shape may be any other shape, such as a disk shape as shown in FIG. 3, or an elliptical or oval cross section. Furthermore, the gas medium 8 may be a rare gas such as He, Ne, or Ar, nitrogen gas (N 2 ), or carbon dioxide gas (CO 2 ).
A single or combined gas medium is suitable; however, if a gas medium containing oxygen or an oxygen compound or a mixture of both (e.g. CO 2 + N 2 ) is used, the effect of preventing the reduction of metal oxides may be reduced. will increase.
第４図は電圧非直線特性を有する金属酸化物よ
り成る高抵抗体素子について、その表面に脱鉛ガ
ラス（ビスマスガラス）外層と金属酸化物
（MgO）内層との重層構造を有する保護被膜を形
成した場合、金属酸化物（SiO2）の保護被膜を
形成した場合及び保護被膜を形成しない場合の真
空加熱試験（条件：１×10-5TOrr，７分間過熱）
に於ける加熱温度に対する高抵抗体素子の制限電
圧をグラフとして示した図であり、第４図Ａは制
限電流が1.0mAのときの制限電圧、第４図Ｂは制
限電流が0.1mAのときの制限電圧である。図に於
いて、Ａ，A′は本考案に係る重層構造保護被膜
有り、Ｂ，B′は金属酸化物保護被膜有り、Ｃ，
C′は保護被膜無しの場合であり、本考案の変動防
止効果が明らかに現れている。 Figure 4 shows a high-resistance element made of a metal oxide with voltage non-linear characteristics, on which a protective coating with a multilayer structure consisting of an outer layer of deleaded glass (bismuth glass) and an inner layer of metal oxide (MgO) is formed. Vacuum heating test with and without forming a protective film of metal oxide (SiO 2 ) (conditions: 1×10 -5 TOrr, heating for 7 minutes)
FIG. 4A is a graph showing the limiting voltage of a high-resistance element against heating temperature, and FIG. 4A shows the limiting voltage when the limiting current is 1.0mA, and FIG. 4B shows the limiting voltage when the limiting current is 0.1mA. is the limiting voltage. In the figure, A and A' have a multilayer protective coating according to the present invention, B and B' have a metal oxide protective coating, C,
C′ is the case without a protective film, and the fluctuation prevention effect of the present invention is clearly evident.
以上述べた如く、本考案のサージ吸収素子は、
複合型サージ吸収素子の構成要素である金属酸化
物より成る高抵抗体素子の表面に、脱ガラスの外
層と金属酸化物より成る内層との重層構造を有す
る保護被膜を形成しているので、製造工程中及び
使用中に於いて、金属酸化物がほとんど還元され
ることがないため、制限電圧が変動せずサージ吸
収特性が安定し、複合型サージ吸収素子の有する
サージに対する応答速度が速く電流耐量が大きい
上に静電容量が小さい等の特性と相俟つて優れた
サージ吸収特性が得られるものである。 As mentioned above, the surge absorbing element of the present invention is
A protective coating with a multilayer structure consisting of a deglassed outer layer and a metal oxide inner layer is formed on the surface of the high-resistance element made of metal oxide, which is a component of the composite surge absorption element. During the process and during use, the metal oxide is almost never reduced, so the limiting voltage does not fluctuate and the surge absorption characteristics are stable, and the composite surge absorption element has a fast response speed to surges and a high current withstand capacity. This combination of characteristics such as a large capacity and a small capacitance provides excellent surge absorption characteristics.
第１図は従来のサージ吸収素子の概略断面図、
第２図は本考案の一実施例に係るサージ吸収素子
を示すもので第２図Ａは概略断面図、第２図Ｂは
要部断面図、第３図は他の実施例の要部断面図、
第４図は真空試験結果を示すもので、第４図Ａ及
び第４図Ｂはそれぞれ制限電流が1.0mA及び
0.1mAの場合の制限電圧を示すグラフ図である。
１……サージ吸収素子、２……高抵抗体素子、
４，４′……電極、５……放電間隙、６……保護
被膜、６ａ……外層、６ｂ……内層、７……気密
容器、８……ガス媒質。
Figure 1 is a schematic cross-sectional view of a conventional surge absorption element.
Fig. 2 shows a surge absorbing element according to an embodiment of the present invention, Fig. 2A is a schematic sectional view, Fig. 2B is a sectional view of a main part, and Fig. 3 is a sectional view of a main part of another embodiment. figure,
Figure 4 shows the vacuum test results, and Figures 4A and 4B show the limiting current of 1.0mA and 4B, respectively.
FIG. 3 is a graph diagram showing the limiting voltage in the case of 0.1 mA. 1...Surge absorption element, 2...High resistance element,
4, 4'... Electrode, 5... Discharge gap, 6... Protective coating, 6a... Outer layer, 6b... Inner layer, 7... Airtight container, 8... Gas medium.
Claims (1)
に、放電間隙を隔てて相対向させた電極を接続
し、これを気密容器中に収容したサージ吸収素
子に於いて、高抵抗体素子の表面に、脱鉛ガラ
スより成る外層及び上記外層と化学的に不活性
な耐熱・耐還元性金属酸化物より成る内層との
重層構造を有する保護被膜を形成したことを特
徴とするサージ吸収素子。 (2) 保護被膜の外層が、ビスマスガラスより成る
ことを特徴とする実用新案登録請求の範囲第１
項に記載のサージ吸収素子。 (3) 保護被膜の内層が、酸化マグネシウム、酸化
ケイ素、酸化スズ及び酸化アルミニウムより成
る群から選定される少なくとも１種類の金属酸
化物より成ることを特徴とする実用新案登録請
求の範囲第１項又は第２項に記載のサージ吸収
素子。 (4) 高抵抗体素子が、電圧非直線特性を有するこ
とを特徴とする実用新案登録請求の範囲第１項
乃至第３項の何れかに記載のサージ吸収素子。 (5) 高抵抗体素子における電極と接する部分が電
圧直線特性を有し、その他の部分が電圧非直線
特性を有することを特徴とする実用新案登録請
求の範囲第１項乃至第３項の何れかに記載のサ
ージ吸収素子。 (6) 気密容器内に、ガス媒質を封入したことを特
徴とする実用新案登録請求の範囲第１項乃至第
５項の何れかに記載のサージ吸収素子。 (7) ガス媒質が、希ガス、窒素ガス若しくは炭酸
ガスの単体又は複合体を含むことを特徴とする
実用新案登録請求の範囲第６項に記載のサージ
吸収素子。 (8) ガス媒質が、酸素ガス及び／又は酸素化合物
を含むことを特徴とする実用新案登録請求の範
囲第７項に記載のサージ吸収素子。[Claims for Utility Model Registration] (1) A surge absorbing element in which electrodes facing each other across a discharge gap are connected to the outer periphery of a high-resistance element made of a metal oxide, and the electrodes are housed in an airtight container. In this method, a protective coating having a multilayer structure consisting of an outer layer made of lead-free glass and an inner layer made of a chemically inert heat-resistant and reduction-resistant metal oxide was formed on the surface of the high-resistance element. A surge absorption element characterized by: (2) Utility model registration claim 1 characterized in that the outer layer of the protective coating is made of bismuth glass
The surge absorbing element described in . (3) Utility model registration claim 1, characterized in that the inner layer of the protective coating is made of at least one metal oxide selected from the group consisting of magnesium oxide, silicon oxide, tin oxide, and aluminum oxide. Or the surge absorption element according to item 2. (4) The surge absorbing element according to any one of claims 1 to 3, wherein the high-resistance element has voltage nonlinear characteristics. (5) Any of claims 1 to 3 of the claims for utility model registration, characterized in that the portion of the high-resistance element in contact with the electrode has linear voltage characteristics, and the other portions have non-linear voltage characteristics. The surge absorbing element described in Crab. (6) The surge absorbing element according to any one of claims 1 to 5 of the utility model registration claim, characterized in that a gas medium is sealed in an airtight container. (7) The surge absorbing element according to claim 6, wherein the gas medium contains a rare gas, nitrogen gas, or carbon dioxide gas alone or in combination. (8) The surge absorbing element according to claim 7, wherein the gas medium contains oxygen gas and/or an oxygen compound.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP675484U JPS60118882U (en) | 1984-01-20 | 1984-01-20 | surge absorption element |
| US06/750,330 US4658324A (en) | 1983-03-23 | 1985-06-28 | Surge absorbing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP675484U JPS60118882U (en) | 1984-01-20 | 1984-01-20 | surge absorption element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60118882U JPS60118882U (en) | 1985-08-10 |
| JPH0216553Y2 true JPH0216553Y2 (en) | 1990-05-08 |
Family
ID=30484485
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP675484U Granted JPS60118882U (en) | 1983-03-23 | 1984-01-20 | surge absorption element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60118882U (en) |
-
1984
- 1984-01-20 JP JP675484U patent/JPS60118882U/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60118882U (en) | 1985-08-10 |
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