JPH02153896A - Laminated single crystal substrate having aluminum nitride single crystal thin film and production thereof - Google Patents
Laminated single crystal substrate having aluminum nitride single crystal thin film and production thereofInfo
- Publication number
- JPH02153896A JPH02153896A JP63277269A JP27726988A JPH02153896A JP H02153896 A JPH02153896 A JP H02153896A JP 63277269 A JP63277269 A JP 63277269A JP 27726988 A JP27726988 A JP 27726988A JP H02153896 A JPH02153896 A JP H02153896A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- film
- thin film
- aluminum nitride
- crystal substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 62
- 239000010409 thin film Substances 0.000 title claims abstract description 33
- 239000000758 substrate Substances 0.000 title claims abstract description 28
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000000034 method Methods 0.000 claims abstract description 33
- 239000010408 film Substances 0.000 claims abstract description 32
- 239000012808 vapor phase Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- -1 aluminum compound Chemical class 0.000 claims description 2
- 229910017464 nitrogen compound Inorganic materials 0.000 claims description 2
- 150000002830 nitrogen compounds Chemical class 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 abstract description 4
- 239000010980 sapphire Substances 0.000 abstract description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 4
- PQLAYKMGZDUDLQ-UHFFFAOYSA-K aluminium bromide Chemical compound Br[Al](Br)Br PQLAYKMGZDUDLQ-UHFFFAOYSA-K 0.000 abstract 1
- 230000002194 synthesizing effect Effects 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 238000001534 heteroepitaxy Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 241000700560 Molluscum contagiosum virus Species 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野］
本発明は窒化アルミニウム（以下、ＡＩＮと略する）単
結晶薄膜を有する積層単結晶基板及びその製造法に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a laminated single crystal substrate having an aluminum nitride (hereinafter abbreviated as AIN) single crystal thin film and a method for manufacturing the same.
気相法によるＡＩＮ単結晶薄膜の合成方法としては、従
来反応原料として金属ＡＩとＮ２ガスを用いたＭｏ１ｅ
ｃｕｌａｒ Ｂｅａｍ Ｅｐｉｔａｘｙ法（以下、Ｍ
Ｂ Ｅ法）、同じく金属Ａ１とＮ２ガスを用いたスバ・
７ター法、塩化アルミニウムとアンモニアガスを用いた
Ｃｈｅｍｉｃａｌ Ｖａｐｏｒ Ｄｅｐｏｓｉｔｉｏｎ
法（以下、ＣＶＤ法）、トリメチルアルミニウムとアン
モニアガスを用いた有機金属ＣＶＤ法（以下、ＭＯＣＶ
Ｄ法）が報告されている。Conventional methods for synthesizing AIN single-crystal thin films using the vapor phase method include Mo1e, which uses metal AI and N2 gas as reaction raw materials.
cular beam epitaxy method (hereinafter referred to as M
B E method), also using metal A1 and N2 gas
Chemical Vapor Deposition using 7ter method, aluminum chloride and ammonia gas
(hereinafter referred to as CVD method), organometallic CVD method (hereinafter referred to as MOCV) using trimethylaluminum and ammonia gas
D method) has been reported.
ＡＩＮ単結晶薄膜は高い絶縁性（バンドギャップは６．
２ｅＶ）を有する圧電性膜である。その高い絶縁性を利
用してｍ−ｖ属化合物半導体のパッシベイション膜とし
ての応用が考えられている。また、弾性表面波（Ｓｕｒ
ｆａｃｅ Ａｃｏｕｓｔｉｃ Ｗａｖｅ 、以下、ＳＡ
Ｗと略する）の伝搬速度（以下、Ｖｓ）が圧電体の中で
最も大きいことから高周波領域のＳＡＷフィルターに代
表されるＳＡＷデバイスとしての応用が期待されている
。AIN single crystal thin film has high insulating properties (band gap is 6.
2 eV). Utilizing its high insulating properties, application as a passivation film for m-v group compound semiconductors is being considered. In addition, surface acoustic waves (Sur
face acoustic wave, hereinafter referred to as SA
Since the propagation velocity (hereinafter referred to as "Vs") is the highest among piezoelectric materials, it is expected to be applied to SAW devices such as SAW filters in the high frequency range.
ＡＩＮ単結晶薄膜を高周波領域のＳＡＷフィルターとし
て応用する際の問題点としてはＡＩＮ単結晶薄膜の結晶
性の不均一性ということが挙げらレル。ＳＡＷフィルタ
ーにおける中心周波数その他フィルター特性はＳＡＷの
伝搬特性と圧電体上に構成される櫛型電極パターン（Ｉ
ｎｔｅｒ ＤｉｇｉｔａｌＴｒａｎｓｄｕｓｅｒ、以下
ＩＤＴ）によって決定される。One of the problems when applying an AIN single crystal thin film as a SAW filter in the high frequency range is the non-uniformity of the crystallinity of the AIN single crystal thin film. The center frequency and other filter characteristics of the SAW filter are determined by the propagation characteristics of the SAW and the comb-shaped electrode pattern (I
ter Digital Transducer (hereinafter referred to as IDT).
結晶性の不均一性は直接５ＡＷＯ伝搬特性に影響し、即
ちフィルター特性に影響する。従って、ＡＩＮ単結晶薄
膜をＳＡＷフィルターとして応用する場合において、Ａ
ＩＮ単結晶薄膜の結晶性の改善は避けがたい問題である
。The crystallinity non-uniformity directly affects the 5AWO propagation characteristics, ie, the filter characteristics. Therefore, when applying the AIN single crystal thin film as a SAW filter,
Improving the crystallinity of IN single crystal thin films is an unavoidable problem.
ＡＩＮ単結晶薄膜の結晶性が不均一になる原因は二通り
考えられ、ひとつは酸素などの不純物がＡＩＮ膜中に固
？容することであり、もうひとつは基板単結晶との物性
不整合すなわち格子定数のずれ及び熱膨張係数の差によ
って生じた格子歪み、応力歪みである。特に、後者の原
因については、ヘテロエピタキシー一般の問題点であり
これを解決することが本目的に対して肝要である。There are two possible reasons why the crystallinity of the AIN single crystal thin film becomes non-uniform. One is that impurities such as oxygen are solidified in the AIN film. The other is lattice distortion and stress distortion caused by physical property mismatch with the substrate single crystal, that is, a shift in lattice constant and a difference in thermal expansion coefficient. In particular, the latter cause is a general problem in heteroepitaxy, and it is essential for the present purpose to solve this problem.
従来技術の上記問題を解決した高品位のＡＩＮ単結晶薄
膜を有する積層単結晶基板とそれを製造する方法を開示
するものである。This invention discloses a laminated single-crystal substrate having a high-quality AIN single-crystal thin film that solves the above-mentioned problems of the prior art, and a method for manufacturing the same.
上記目的を達成するために、本発明は、ＸｖＡロッキン
グカーブの半値幅が、０．５０未満である窒化アルミニ
ウム単結晶薄膜を有する積層単結晶基板を提供するもの
であり、具体的には、単結晶基板上にｌｎｍ〜１８０ｎ
ｍ未満のアモルファス窒化アルミニウム膜があり、その
上に窒化アルミニウム単結晶薄膜がある積層単結晶基板
を提供するものである。そして、その製造法として、金
属アルミニウムあるいはアルミニウム化合物と窒素化合
物とを反応させ、異種単結晶基板上に窒化アルミニウム
単結晶薄膜を気相法により合成する際、あらかしめ単結
晶基板上にアモルファス窒化アルミニウム膜を成膜し、
そのアモルファス窒化アルミニウム膜の上に窒化アルミ
ニウム単結晶薄膜を成膜する積層単結晶基板の製造法を
提供するものである。In order to achieve the above object, the present invention provides a laminated single crystal substrate having an aluminum nitride single crystal thin film whose half width of the XvA rocking curve is less than 0.50. lnm~180n on crystal substrate
The present invention provides a laminated single-crystal substrate having an amorphous aluminum nitride film having a thickness of less than m and an aluminum nitride single-crystal thin film thereon. The manufacturing method involves reacting metal aluminum or an aluminum compound with a nitrogen compound to synthesize an aluminum nitride single crystal thin film on a different type of single crystal substrate using a vapor phase method. Deposit a film,
The present invention provides a method for manufacturing a laminated single crystal substrate in which an aluminum nitride single crystal thin film is formed on the amorphous aluminum nitride film.
ヘテロエピタキシーにおける界面の物性不整合による成
長結晶層の結晶性劣化を改善する技術には大別して二通
り試みられてきている。ひとつは歪み超格子をヘテロ界
面に施し、ミスフィ７）転位の伝搬を防ぎ高品位の単結
晶薄膜を得るものである。もうひとつは、ヘテロ界面に
極薄いアモルファス層を低温において成長させ次に通常
の成長温度でエピタキシャル成長を行うもので、−ａ的
には二段階成長法と呼ばれている。二段階成長法の報告
例を第１表にまとめた。本発明はこの二段階成長法の考
え方に分類されるものである。Broadly speaking, two types of techniques have been attempted to improve the crystallinity deterioration of the grown crystal layer due to physical property mismatch at the interface in heteroepitaxy. One is to apply a strained superlattice to the hetero interface to prevent misfi 7) dislocation propagation and obtain a high-quality single-crystal thin film. The other method is to grow an extremely thin amorphous layer on the hetero interface at a low temperature and then perform epitaxial growth at a normal growth temperature, which is called a two-step growth method. Table 1 summarizes reported examples of the two-step growth method. The present invention falls under the concept of this two-stage growth method.
ＡＩＮのへテロエピタキシーに関する限り、二段階成長
法を試みた報告例は無く、たとえば、サファイアを基板
として用いＭＯＣＶＤによってエピタキシャル成長を行
う場合において、エピタキシーにさきがけでアンモニア
ガスによりサファイア表面を窒化することによって成長
単結晶層の結晶性を改善する報告があるのみである。（
Ｊｐｎ、Ｊ。As far as heteroepitaxy of AIN is concerned, there are no reports that have attempted a two-step growth method. For example, when epitaxial growth is performed by MOCVD using sapphire as a substrate, growth is performed by nitriding the sapphire surface with ammonia gas prior to epitaxy. There is only a report on improving the crystallinity of a single crystal layer. (
Jpn, J.
Ａｐｐｌ、Ｐｈｙｓ、２７． Ｌ１６１ （１９８８）
）本発明の実施にあたってＡＩＮの原料となる物質は
特に限定されない。また、アモルファスＡＩＮ膜の合成
時とＡＩＮ単結晶薄膜の合成時で原料が変わっていても
差支えない。要は、アモルファスＡＩＮ膜及びＡＩＮ単
結晶薄膜を合成する際に単結晶基板上において気相化さ
れていることが肝要である。本発明において使用される
単結晶基板は特に限定はされないが、ＳＡＷデバイスと
して用いられる場合にはサラ１４フ８面及び０面、Ｓｉ
単結晶（１１１）面などを使用することが好ましい。ア
モルファスＡＩＮ膜の合成方法は特に限定されるもので
はなく、スパッター法、ＣＶＤ法、プラズマＣＶＤ法、
光ＣＶＤ法、蒸着法など気相法による成膜方法であれば
なんでも良い。ＡＩＮ単結晶薄膜の合成方法は特に限定
されるものではなく、ＭＢＥ法、スパッター法、ＭＯＣ
ＶＤ法、ＣＶＤ法、蒸着法など気相法によってＡＩＮ単
結晶薄膜が合成できる方法であればなんでも良い。Appl, Phys, 27. L161 (1988)
) In carrying out the present invention, there are no particular limitations on the substance that becomes the raw material for AIN. Furthermore, there is no problem even if the raw materials are different when synthesizing an amorphous AIN film and when synthesizing an AIN single crystal thin film. The key point is that when synthesizing an amorphous AIN film and an AIN single crystal thin film, it is vaporized on a single crystal substrate. The single crystal substrate used in the present invention is not particularly limited, but when used as a SAW device, it is
It is preferable to use a single crystal (111) plane or the like. The method of synthesizing the amorphous AIN film is not particularly limited, and includes sputtering, CVD, plasma CVD,
Any film forming method using a vapor phase method such as a photo-CVD method or a vapor deposition method may be used. The method for synthesizing the AIN single crystal thin film is not particularly limited, and may include MBE, sputtering, and MOC.
Any method that can synthesize an AIN single crystal thin film by a vapor phase method such as a VD method, a CVD method, or an evaporation method may be used.
また、二段階の成膜方法は必ずしも同一である必要はな
く、また同一の反応室で成膜される必要もない。ＡＩＮ
単結晶薄膜の結晶性向上に対して効果のあるアモルファ
スＡＩＮ膜の膜厚は二段階の成膜方法によって若干異な
り、厳密には定められないが、ｌｎｍ未満であればその
効果が薄く、また１８０ｎＩＩ！以上の場合にはアモル
ファスＡＩＮ上にはＡＩＮ多結晶膜が成長してしまう。Furthermore, the two-step film formation method does not necessarily have to be the same, nor does it need to be performed in the same reaction chamber. A.I.N.
The thickness of the amorphous AIN film, which is effective in improving the crystallinity of single-crystal thin films, varies slightly depending on the two-step film formation method and cannot be strictly determined, but if it is less than 1 nm, the effect is weak, and if it is less than 180 nII. ! In the above case, an AIN polycrystalline film will grow on the amorphous AIN.
従って、該膜厚はｌｎｍ以上１８０ｎｍ未満が好ましく
、特に５ｎｍ以上１１００ｎ以下である場合にはその効
果が高い。界面にアモルファス層を介在させながらへテ
ロエピタキシャル成長が可能である理由は定かではない
が、エピタキシーを行うまでの昇温過程においてアモル
ファスＡＩＮ膜がアニールされ局部的に単結晶化された
ものと考えられる。また、二段階成長法によってＡＩＮ
単結晶薄膜の結晶性が向上する理由も明らかではないが
、格子不整合を除去すると同時に、低温でＡＩＮ膜を単
結晶基板上に成膜することによって高温におけるエピタ
キシー・時に単結晶基板と原料ガスとの反応を防ぎ基板
損傷を押え、三次元核成長を防止していることが影響し
ているものと考えられる。なお、ＡＩＮ単結晶薄膜の結
晶性の評価にはＸ線ロッキングカーブの半値幅をもって
行った。測定に用いたのは（株）リガク製ＲＡＩ）−Ａ
シリーズであり、発散スリット及び散乱スリットは１／
６°のものを用い、受光スリットは０．３ｍｍのものを
用いた。Therefore, the film thickness is preferably 1 nm or more and less than 180 nm, and the effect is particularly high when it is 5 nm or more and 1100 nm or less. The reason why heteroepitaxial growth is possible with an amorphous layer interposed at the interface is not clear, but it is thought that the amorphous AIN film is annealed and locally turned into single crystals during the temperature raising process before epitaxy. In addition, by the two-step growth method, AIN
Although it is not clear why the crystallinity of single-crystal thin films improves, it is possible to eliminate lattice mismatch and at the same time form an AIN film on a single-crystal substrate at a low temperature. This is thought to be due to the fact that it prevents reactions with the substrate, suppresses damage to the substrate, and prevents three-dimensional nuclear growth. The crystallinity of the AIN single crystal thin film was evaluated using the half width of the X-ray rocking curve. The product used for the measurement was RAI)-A manufactured by Rigaku Co., Ltd.
series, and the divergent slit and scattering slit are 1/
A light receiving slit of 0.3 mm was used.
以下、本発明につき実施例を挙げて説明する。 Hereinafter, the present invention will be explained by giving examples.
（１）単結晶基板 サファイアＲ面（２）ア
モルファス
ＡＩＮの合成方法 スパッター法スパッターター
ゲット ＡＩ
雰囲気ガス Ａｒ；７０％
Ｎ２；３０％
０、０６ Ｔｏｒｒ
３００℃
反応圧力
基板温度
（３１ＡＩＮ単結晶
薄膜の合成方法 ＣＶＤ法
Ａ Ｉ ｆｌ Ａ Ｉ Ｂ ｒ ＋＋
Ｎ源 ＮＨＩ
雰囲気ガス Ｈ２
反応圧力 １００ＴｏｒｒＭ 手ｌ １品
度 １１５０ °にのような
条件下でアモルファスＡＩＮ膜の膜厚を変化させて合成
を行い、Ｘ線ロッキングカーブによってＡＩＮ単結晶薄
膜の結晶性の評価を行った。なお、単結晶薄膜の膜ｙゾ
は３．０／１ｍに揃えた。以上の実施例の結果を第２表
にまとめた。比較例としてアモルファスＡＩＮ膜を界面
に介在させない場合の結果も合せて記載した。第２表か
ら明らかなようにアモルファスＡＩＮ膜を介在させない
場合のロッキングカーブの半値幅に比べて、ｌｎｍ以上
１８０ｎｍ未満のアモルファスＡＩＮ膜を介在させた場
合のロッキングカーブの半値幅は小さな値となり、即ら
ＡＩＮ単結晶薄膜の結晶性が向上したことが確認される
。(1) Single crystal substrate Sapphire R surface (2) Synthesis method of amorphous AIN Sputtering method Sputter target AI Atmosphere gas Ar; 70% N2; 30% 0.06 Torr 300°C Reaction pressure Substrate temperature (31 Method for synthesizing AIN single crystal thin film CVD method A I fl A I B r ++
N source: NHI Atmospheric gas: H2 Reaction pressure: 100 TorrM Hand: 1 quality: Synthesis is performed by changing the film thickness of the amorphous AIN film under conditions such as 1150°, and the crystallinity of the AIN single crystal thin film is determined by the X-ray rocking curve. We conducted an evaluation. Note that the film y-zo of the single crystal thin film was set to 3.0/1 m. The results of the above examples are summarized in Table 2. As a comparative example, results obtained when no amorphous AIN film was interposed at the interface were also described. As is clear from Table 2, compared to the half-width of the rocking curve when no amorphous AIN film is interposed, the half-width of the rocking curve when an amorphous AIN film of 1 nm or more and less than 180 nm is interposed becomes a smaller value, and immediately It is confirmed that the crystallinity of the AIN single crystal thin film was improved.
第２表
ス１」０１果
０．４８
０．３９
０．３０
０．２８
０．３１
０．３５
０．３８
０．３９
０．４５
０．５０
〔発明の効果〕
本発明によれば、結晶性の良好なＡＩＮ単結晶薄膜を有
する積層単結晶基板を得ることができる。Table 2 S1'01 fruit 0.48 0.39 0.30 0.28 0.31 0.35 0.38 0.39 0.45 0.50 [Effect of the invention] According to the present invention, crystal A laminated single crystal substrate having an AIN single crystal thin film with good properties can be obtained.
特許出願人 旭化成工業株式会社Patent applicant: Asahi Kasei Industries, Ltd.
Claims (3)
である窒化アルミニウム単結晶薄膜を有する積層単結晶
基板(1) A laminated single crystal substrate having an aluminum nitride single crystal thin film whose half width of the X-ray rocking curve is less than 0.50
ファス窒化アルミニウム膜があり、その上に窒化アルミ
ニウム単結晶薄膜がある積層単結晶基板(2) A laminated single-crystal substrate with an amorphous aluminum nitride film of 1 nm to less than 180 nm on a single-crystal substrate, and an aluminum nitride single-crystal thin film on top of the amorphous aluminum nitride film
窒素化合物とを反応させ、異種単結晶基板上に窒化アル
ミニウム単結晶薄膜を気相法により合成する際、あらか
じめ単結晶基板上にアモルファス窒化アルミニウム膜を
成膜し、そのアモルファス窒化アルミニウム膜の上に窒
化アルミニウム単結晶薄膜を成膜する積層単結晶基板の
製造法(3) When reacting metal aluminum or an aluminum compound with a nitrogen compound to synthesize an aluminum nitride single crystal thin film on a heterogeneous single crystal substrate by a vapor phase method, an amorphous aluminum nitride film is formed on the single crystal substrate in advance. , a method for manufacturing a laminated single-crystal substrate in which an aluminum nitride single-crystal thin film is deposited on the amorphous aluminum nitride film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63277269A JPH02153896A (en) | 1988-11-04 | 1988-11-04 | Laminated single crystal substrate having aluminum nitride single crystal thin film and production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63277269A JPH02153896A (en) | 1988-11-04 | 1988-11-04 | Laminated single crystal substrate having aluminum nitride single crystal thin film and production thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02153896A true JPH02153896A (en) | 1990-06-13 |
Family
ID=17581170
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63277269A Pending JPH02153896A (en) | 1988-11-04 | 1988-11-04 | Laminated single crystal substrate having aluminum nitride single crystal thin film and production thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02153896A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004142953A (en) * | 2001-09-28 | 2004-05-20 | Ngk Insulators Ltd | Group iii nitride epitaxial substrate, epitaxial substrate for group iii nitride element, and group iii nitride element |
| JP2005060216A (en) * | 2003-07-29 | 2005-03-10 | Ngk Insulators Ltd | Method and apparatus for manufacturing group iii nitride single crystal |
-
1988
- 1988-11-04 JP JP63277269A patent/JPH02153896A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004142953A (en) * | 2001-09-28 | 2004-05-20 | Ngk Insulators Ltd | Group iii nitride epitaxial substrate, epitaxial substrate for group iii nitride element, and group iii nitride element |
| JP2005060216A (en) * | 2003-07-29 | 2005-03-10 | Ngk Insulators Ltd | Method and apparatus for manufacturing group iii nitride single crystal |
| JP4493427B2 (en) * | 2003-07-29 | 2010-06-30 | 日本碍子株式会社 | Method for producing group III nitride single crystal |
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