JPH02151839A - Fully solid-state electrochromic element - Google Patents
Fully solid-state electrochromic elementInfo
- Publication number
- JPH02151839A JPH02151839A JP63307167A JP30716788A JPH02151839A JP H02151839 A JPH02151839 A JP H02151839A JP 63307167 A JP63307167 A JP 63307167A JP 30716788 A JP30716788 A JP 30716788A JP H02151839 A JPH02151839 A JP H02151839A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film
- thin
- electrode
- reversible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000002441 reversible effect Effects 0.000 claims abstract description 26
- 229910052741 iridium Inorganic materials 0.000 claims abstract description 16
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims abstract description 16
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910000457 iridium oxide Inorganic materials 0.000 claims abstract description 12
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 6
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims abstract description 5
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims abstract description 5
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910001930 tungsten oxide Inorganic materials 0.000 claims abstract description 5
- 239000010409 thin film Substances 0.000 claims description 62
- 238000004040 coloring Methods 0.000 claims description 12
- 239000010408 film Substances 0.000 claims description 8
- 230000002829 reductive effect Effects 0.000 claims description 8
- 230000001590 oxidative effect Effects 0.000 claims description 7
- AZWHFTKIBIQKCA-UHFFFAOYSA-N [Sn+2]=O.[O-2].[In+3] Chemical compound [Sn+2]=O.[O-2].[In+3] AZWHFTKIBIQKCA-UHFFFAOYSA-N 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 14
- 230000004044 response Effects 0.000 abstract description 9
- 239000011521 glass Substances 0.000 abstract description 6
- 230000003647 oxidation Effects 0.000 abstract description 6
- 238000007254 oxidation reaction Methods 0.000 abstract description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 2
- 229910000476 molybdenum oxide Inorganic materials 0.000 abstract description 2
- 229910052759 nickel Inorganic materials 0.000 abstract description 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 abstract description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 abstract description 2
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052709 silver Inorganic materials 0.000 abstract description 2
- 239000004332 silver Substances 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 235000017963 Cornus kousa Nutrition 0.000 description 1
- 244000274051 Cornus kousa Species 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000010407 anodic oxide Substances 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000010349 cathodic reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- IUJMNDNTFMJNEL-UHFFFAOYSA-K iridium(3+);trihydroxide Chemical compound [OH-].[OH-].[OH-].[Ir+3] IUJMNDNTFMJNEL-UHFFFAOYSA-K 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
この発明は、表示素子、調光素子、記憶素子、大型デイ
スプレィおよび調光カラス等としての用途が期待されて
いる全固体エレクトロクロミック素子に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application This invention relates to an all-solid-state electrochromic device that is expected to be used as a display element, a light control element, a memory element, a large display, a light control glass, and the like.
発明の概要
この発明は、少なくとも一方か透明な一対の電極の間に
可逆的還元発色性薄膜と絶縁性薄膜を挾持する全固体エ
レクトロクロミック素子において、一方の電極と可逆的
還元発色性薄膜との間に金属イリ／ウムを含有すること
もある酸化イリジウムから成る可逆的酸化発色性薄膜を
介在させると共に、
他方の電極と絶縁性薄膜との間に金属イリジウムを含有
する酸化イリジウムから成る対向電極薄膜を介在させる
ことによって、
応答速度、駆動電圧、可使温度範囲および耐久寿命等を
実用に十分に供し得る程度まで改良できるようにしたも
のである。Summary of the Invention The present invention provides an all-solid-state electrochromic device in which a reversible reductive color forming thin film and an insulating thin film are sandwiched between a pair of electrodes, at least one of which is transparent. A reversible oxidative color forming thin film made of iridium oxide that may contain metallic iridium is interposed between the two electrodes, and a counter electrode thin film made of iridium oxide containing metallic iridium is interposed between the other electrode and the insulating thin film. By intervening, the response speed, drive voltage, usable temperature range, durability life, etc. can be improved to a level that is sufficient for practical use.
従来の技術
全固体エレクトロクロミック素子としては、不溶解性電
極層／絶縁体層／可逆的還元発色層型のものかＳ、に、
Ｄｅｂによって最初に開発され、その後、このような素
子の表示の信頼性を改良するために、可逆的酸化発色層
／絶縁体層／可逆的還元発色層型の素子か提供されたく
特開昭５６−４６７９号公報参照）。Conventional technology All-solid-state electrochromic devices are of the insoluble electrode layer/insulator layer/reversible reduction coloring layer type.
First developed by Deb, in order to improve the display reliability of such devices, a reversible oxidation coloring layer/insulator layer/reversible reduction coloring layer type device was proposed in JP-A-56. (Refer to Publication No. 4679).
後者は、透明導電膜」二に金属イリジウムを蒸着さぜ、
硫酸溶液中ての陽極酸化に付すことによって透明な水酸
化イリジウムを形成させ、次いで絶縁性薄膜および還元
発色性薄膜を積層させることによって製造させる素子で
、着色効率、メモリー性および応答速度等は優れている
が、陽極酸化工程において真空系を開放する硫酸溶液中
への浸漬処理を必要とするために、全工程が複雑になる
ばかりでなく、均一な陽極酸化膜が得難く、大面積の素
子を製造することが困難であるという欠点を有する。The latter is made by depositing metallic iridium on a transparent conductive film.
This device is manufactured by forming transparent iridium hydroxide by anodic oxidation in a sulfuric acid solution, and then laminating an insulating thin film and a reduction coloring thin film, and has excellent coloring efficiency, memory properties, and response speed. However, the anodization process requires immersion in a sulfuric acid solution to open the vacuum system, which not only complicates the entire process, but also makes it difficult to obtain a uniform anodic oxide film, making it difficult to obtain large-area devices. The disadvantage is that it is difficult to manufacture.
このような欠点を解決する方法として、上記の金属イリ
ジウム上に五酸化タンタルと酸化タングステンを積層さ
せた後、大気中で交流をかけて金属イリジウムを水酸化
物にする技術か提案されている（特開昭５８−７０２１
．５号公報参照）。As a method to solve these drawbacks, a technique has been proposed in which tantalum pentoxide and tungsten oxide are layered on the metal iridium, and then the metal iridium is converted into hydroxide by applying alternating current in the atmosphere ( Japanese Patent Publication No. 58-7021
．． (See Publication No. 5).
しかしながら、この場合には、金属イリジウムを水酸化
物にする工程において容積膨張かおこるために、素子を
構成する各薄膜間の密着性が低下し、実用的な強度と信
頼性を有するものか得難いという問題かある。However, in this case, volume expansion occurs during the process of converting metallic iridium into hydroxide, which reduces the adhesion between the thin films that make up the element, making it difficult to obtain a product with practical strength and reliability. There is a problem.
さらにこれらの全固体エレクトロクロミック素子におい
ては、陽極反応と陰極反応とが絶縁体層によって隔離さ
れるので、絶縁体層のイオン伝導性によって応答性が左
右されやすく、また、消色反応の逆極性反応による水分
の消費をもたらすガス発生があるために、耐久寿命が比
較的短く、応答速度等の特性か不安定であるという問題
もある。Furthermore, in these all-solid-state electrochromic devices, the anodic reaction and cathodic reaction are separated by an insulating layer, so the response is likely to be influenced by the ionic conductivity of the insulating layer, and the reverse polarity of the decolorizing reaction There are also problems in that the durability is relatively short and the response speed and other characteristics are unstable because gas is generated resulting in the consumption of water due to the reaction.
発明が解決しようとする課題
この発明は、上記諸問題を解決することによって、実用
に十分に供し得る程度の応答速度、駆動電圧、可使温度
範囲および耐久寿命等の特性を有する全固体エレクトロ
クロミック素子を提供するためになされたものである。Problems to be Solved by the Invention The present invention solves the above-mentioned problems and provides an all-solid-state electrochromic device that has characteristics such as response speed, drive voltage, usable temperature range, and durable life that are sufficiently suitable for practical use. This was done to provide an element.
課題を解決するための手段
即ち本発明は、少なくとも一方が透明な一対の電極の間
に可逆的還元発色性薄膜と絶縁性薄膜を挾持する全固体
エレクトロクロミック素子において、
一方の電極と可逆的還元発色性薄膜との間に金属イリジ
ウムを含有することもある酸化イリジウムから成る可逆
的酸化発色性薄膜が介在し、さらに
他方の電極と該絶縁性薄膜との間に金属イリジウムを含
有する酸化イリジウムから成る対向電極薄膜が介在する
ことを特徴とする、
全固体エレクトロクロミック素子に関する。A means for solving the problem, that is, the present invention provides an all-solid-state electrochromic device in which a reversibly reductive coloring thin film and an insulating thin film are sandwiched between a pair of electrodes, at least one of which is transparent. A reversibly oxidized color-forming thin film made of iridium oxide that may contain metallic iridium is interposed between the color-forming thin film, and a reversible oxidative color-forming thin film made of iridium oxide containing metallic iridium is interposed between the other electrode and the insulating thin film. The present invention relates to an all-solid-state electrochromic device, characterized in that a counter electrode thin film consisting of the following is interposed.
以下、本発明を添付図に基ついて説明する。Hereinafter, the present invention will be explained based on the accompanying drawings.
第１図は、本発明による全固体エレクトロクロミック素
子の一態様を示す模式的断面図である。FIG. 1 is a schematic cross-sectional view showing one embodiment of an all-solid-state electrochromic device according to the present invention.
ガラス基板（７）の厚さと材質は特に限定的ではないが
、通常は厚さ］、、０７１π〜２．０ｍｍの透明な普通
のガラス板を適宜使用すればよい。Although the thickness and material of the glass substrate (7) are not particularly limited, a transparent ordinary glass plate having a thickness of 071π to 2.0 mm may be used as appropriate.
透明導電薄膜（６）は例えば酸化スズ−酸化インジウム
等を真空蒸着法またはスパッタ法によって形成させる。The transparent conductive thin film (6) is formed of, for example, tin oxide-indium oxide by vacuum evaporation or sputtering.
通常、膜厚は１，３００人〜２，６００人、抵抗は１８
Ω／ロ〜７Ω／口である。Typically, the film thickness is 1,300 to 2,600, and the resistance is 18
Ω/low to 7Ω/mouth.
この場合、市販されているこの種の被覆基板を適宜利用
してもよい。In this case, a commercially available coated substrate of this type may be used as appropriate.
透明導電薄膜（６）」−には金属イリジウムを含有する
酸化イリジウムから成る対向電極薄膜（５）が形成され
る。A counter electrode thin film (5) made of iridium oxide containing metallic iridium is formed on the transparent conductive thin film (6).
金属イリジウムの含有量は通常１０〜３０Ｍ量％てあり
、１０重量％以下では素子の耐熱特性に影響かある。The content of metallic iridium is usually 10 to 30 M%, and if it is less than 10% by weight, it may affect the heat resistance characteristics of the element.
また３０重里％以上になると、光学特性に影響がでて反
射率、透過率の低下がみられる。Moreover, when it exceeds 30%, the optical properties are affected, and a decrease in reflectance and transmittance is observed.
該対向電極薄膜（５）は、通常、金属イリンウ１１を蒸
着源とする高周波イオンブレーティング法によって厚さ
１００人〜３００人の薄膜として蒸着させる。The counter electrode thin film (5) is usually deposited as a thin film with a thickness of 100 to 300 mm using a high frequency ion blasting method using the metal oxide 11 as a deposition source.
この場合の一般的な蒸着条件は次の通りである基板温度
１００°Ｃ１真空度：５ Ｘ １０−’Ｔｏｒｒ、蒸
着速度・０．２〜１．５人／秒
該対向電極薄膜（５）Ｊ：には五酸化タンタル、五酸化
ニオ、ブ、二酸化ジルコニウム、アルミナまたは二酸化
ケイ素等から成る絶縁性薄膜（４）が形成される。The general deposition conditions in this case are as follows: Substrate temperature: 100°C; Vacuum: 5 x 10-'Torr; Vapor deposition rate: 0.2 to 1.5 people/second; Counter electrode thin film (5) J : An insulating thin film (4) made of tantalum pentoxide, niobium pentoxide, aluminum, zirconium dioxide, alumina, silicon dioxide, etc. is formed.
該絶縁性薄膜の厚さは特に限定的ではないか、通常は５
．０００人〜８，０００人であり、その般的な蒸着条件
は次の通りである：
基板温度、１００°Ｃ３真空度５ Ｘ Ｉ Ｏ−’Ｔｏ
ｒｒ。The thickness of the insulating thin film is not particularly limited, and is usually 5
．． 000 to 8,000 people, and the general deposition conditions are as follows: Substrate temperature, 100°C3 Vacuum degree 5
rr.
蒸着速度、５〜１２人／秒
この絶縁性薄膜（４）」二には酸化タングステンまたは
酸化モリブデン等から成る可逆的還元発色性薄膜く３）
が真空蒸着法等によって蒸着される。Vapor deposition rate: 5 to 12 people/second The insulating thin film (4) is a reversibly reductive color-forming thin film made of tungsten oxide or molybdenum oxide (3).
is deposited by vacuum evaporation method or the like.
該可逆的還元発色性薄膜（３）の厚さは特に限定的では
ないが、通常は４，０００人〜６． ＯＯ０人であり、
その一般的な蒸着条件は次の通りである基板温度〜１０
０′Ｃ１真空度： ５ Ｘ １０−’Ｔｏｒｒ、蒸着速
度：４〜８人／秒
この可逆的還元発色性薄膜（３）上には酸化イリジウム
から成る可逆的酸化発色性薄膜（２）が形成される。該
薄膜（２）は金属イリジウムを含有していてもよい。The thickness of the reversible reduction color forming thin film (3) is not particularly limited, but is usually 4,000 to 6. OO0 people,
Its general deposition conditions are as follows:substrate temperature ~10
0'C1 Vacuum degree: 5 x 10-' Torr, Vapor deposition rate: 4 to 8 people/sec A reversible oxidative color-forming thin film (2) made of iridium oxide is formed on this reversible reductive color-forming thin film (3). be done. The thin film (2) may contain metallic iridium.
該可逆的酸化発色性薄膜（２）の厚さも特に限定的では
ないが、通常は５０〜１００人であり、その一般的な蒸
着条件は次の通りである
基板温度：〜１００’Ｃ，真空度： ５ Ｘ １０−’
Ｔｏｒｒ。The thickness of the reversible oxidative color forming thin film (2) is also not particularly limited, but is usually 50 to 100, and the general deposition conditions are as follows: Substrate temperature: ~100'C, vacuum Degree: 5 x 10-'
Torr.
蒸着速度０．２〜１５人／秒
この可逆的酸化発色性薄（２）の」二（こはアルミニウ
ム、銀またはニッケル等から成る電極薄膜（１）が真空
蒸着法等によって積層される。該薄膜（１）”の厚さは
通常５００〜１，５００人である。この場合の一般的な
蒸着条件は次の通りである基板温度、常温、真空度：２
Ｘ Ｉ Ｏ−５Ｔｏｒｒ以上である。At a deposition rate of 0.2 to 15 people/sec, the reversible oxidative color-forming thin (2) electrode thin film (1) made of aluminum, silver, nickel, etc. is laminated by a vacuum evaporation method or the like. The thickness of the thin film (1) is usually 500 to 1,500. The general deposition conditions in this case are as follows: substrate temperature, room temperature, degree of vacuum: 2
X I O-5 Torr or more.
電極薄膜（１）として、アルミニウム等の反射性薄膜を
形成させることによってエレクトロクロミックミラーが
得られる。An electrochromic mirror can be obtained by forming a reflective thin film of aluminum or the like as the electrode thin film (1).
上記の構成を有する全固体エレクトロクロミック素子に
おいては可逆的なイオン反応が制御され、優れた水吸着
能を有する酸化イリジウムはプロトンの生成と移動によ
る低電圧駆動性をもたらし、さらに、両極間の平衡電位
差による自然着色はおこらない。In the all-solid-state electrochromic device with the above configuration, reversible ionic reactions are controlled, and iridium oxide, which has excellent water adsorption ability, provides low voltage drive performance due to the generation and transfer of protons. Natural coloring due to potential difference does not occur.
以下、本発明を実施例によって説明する。Hereinafter, the present invention will be explained by examples.
実施例１
次の手順に従って、第１図に示すような断面構造を有す
るエレクトロクロミックミラーを作製した。Example 1 An electrochromic mirror having a cross-sectional structure as shown in FIG. 1 was manufactured according to the following procedure.
透明導電膜例きガラス基板（５０ｍｔｔｔ×１００ｍｒ
ｔｔＸ ｔ ｌ 、 ９ ｘｚ）上に金属イリジウムを
蒸着源とする高周波イオンブレーティング法によって厚
さ４００人の対向電極薄膜を形成させたく基板温度１０
０°Ｃ１真空度： ５ Ｘ １０−’Ｔｏｒｒ、蒸着速
度：０．８人／秒）。該対向電極薄膜が多孔性金属イリ
ジウムと酸化イリジウムとの混合体であることは電子線
回折法によって確認した。Glass substrate with transparent conductive film (50mttt x 100mr
To form a counter electrode thin film with a thickness of 400 mm on the substrate (tt
0°C1 vacuum degree: 5 x 10-'Torr, deposition rate: 0.8 people/sec). It was confirmed by electron diffraction that the counter electrode thin film was a mixture of porous metallic iridium and iridium oxide.
該対向電極薄膜上に五酸化タンタルの薄膜を蒸着させ（
基板温度１００°Ｃ１真空度：５Ｘ１０〜４Ｔ ｏｒｒ
、蒸着速度：１０人／秒、膜厚５，０００人）、該絶縁
性薄膜上に酸化タングステンの薄膜を蒸着させた（基板
温度：５０°Ｃ１真空度：５Ｘ１．０′□′Ｔ ｏｒｒ
蒸着速度＝５人／秒、膜厚４． 、０００人）。A thin film of tantalum pentoxide is deposited on the counter electrode thin film (
Substrate temperature 100°C 1 Vacuum degree: 5X10~4T orr
A thin film of tungsten oxide was deposited on the insulating thin film (substrate temperature: 50°C, degree of vacuum: 5X1.0'□'T orr).
Vapor deposition rate = 5 people/sec, film thickness 4. , 000 people).
該可逆的還元発色性薄膜上に上記の対向電極薄膜と同様
の層を同し条件下でマスクを変えて蒸着させ、最後にア
ルミニウムの薄膜を蒸着させた（基板温度：３０°Ｃ１
真空度： Ｉ Ｘ １０−５Ｔｏｒｒ、蒸着速度・ＩＯ
人／秒、膜厚：１，０００人）。A layer similar to the above-mentioned counter electrode thin film was deposited on the reversible reductive coloring thin film under the same conditions with different masks, and finally a thin aluminum film was deposited (substrate temperature: 30° C.
Vacuum degree: I x 10-5 Torr, evaporation rate/IO
people/second, film thickness: 1,000 people).
上記実施例において得られたミラーは特に自動車用防眩
ミラーとして好適なもので、未着色時に６０％、着色時
に１５％以下（駆動電圧１．３５Ｖ）の応答時間２秒で
作動し、−３０〜」＝８０°Ｃの温度域においても安定
に作動する。The mirror obtained in the above example is particularly suitable as an anti-glare mirror for automobiles, and operates with a response time of 2 seconds at 60% when uncolored and 15% or less when colored (driving voltage 1.35V), and -30% It operates stably even in a temperature range of 80°C.
発明の効果
本発明により、従来の全固体エレクトロクロミック素子
に係わる前記の問題点は解消され、その応答速度、駆動
電圧、可使温度範囲および耐久寿命等は実用に十分に供
し得る程度まで改良される。Effects of the Invention According to the present invention, the above-mentioned problems associated with conventional all-solid-state electrochromic devices have been solved, and their response speed, drive voltage, usable temperature range, and durability have been improved to the extent that they can be put to practical use. Ru.
第１図は本発明による全固体エレクトロクロミック素子
の一態様を示す模式的断面図である。
（１）は電極薄膜、（２）は可逆的酸化発色性薄膜、（
３）は可逆的還元発色性薄膜、（４）は絶縁性薄膜、（
５）は対向電極薄膜、（６）は透明導電薄膜、（７）は
ガラス基板を示す。
特許出願人 株式会社 東海理化電機製作所代理人 弁
理士前 山 葆 はか１名FIG. 1 is a schematic cross-sectional view showing one embodiment of the all-solid-state electrochromic device according to the present invention. (1) is an electrode thin film, (2) is a reversible oxidation color forming thin film, (
3) is a reversible reductive coloring thin film, (4) is an insulating thin film, (
5) is a counter electrode thin film, (6) is a transparent conductive thin film, and (7) is a glass substrate. Patent Applicant: Tokai Rika Denki Seisakusho Co., Ltd. Representative: Haka Yamaboshi, Patent Attorney: 1 person
Claims (1)
６）の間に可逆的還元発色性薄膜（３）と絶縁性薄膜（
４）を挾持する全固体エレクトロクロミック素子におい
て、 一方の電極（１）と該可逆的還元発色性薄膜（３）との
間に金属イリジウムを含有することもある酸化イリジウ
ムから成る可逆的酸化発色性薄膜（２）が介在し、 他方の電極（６）と該絶縁性薄膜（４）との間に金属イ
リジウムを含有する酸イリジウムから成る対向電極薄膜
（５）が介在することを特徴とする、全固体エレクトロ
クロミック素子。 ２、請求項１記載の全固体エレクトロクロミック素子に
おいて、可逆的酸化発色性薄膜（２）と対向電極薄膜（
５）の介在位置を入れ替えた構造を有する全固体エレク
トロクロミック素子。 ３、電極（１）がアルミニウム薄膜であり、他方の電極
（６）が酸化スズ−酸化インジウム透明導電薄膜であり
、可逆的還元発色性薄膜（３）が酸化タングステン薄膜
であり、絶縁性薄膜（４）が五酸化タンタル薄膜である
請求項１または請求項２記載の全固体エレクトロクロミ
ック素子。 ４、請求項１から３のいずれかに記載された全固体エレ
クトロクロミック素子を具備した自動車用防眩ミラー。[Claims] 1. A pair of electrodes (1), at least one of which is transparent, and (
Between 6), the reversible reductive coloring thin film (3) and the insulating thin film (
4) in which an all-solid-state electrochromic device sandwiching a reversible oxidative coloring film made of iridium oxide, which may contain metallic iridium, between one electrode (1) and the reversible reductively coloring thin film (3); A thin film (2) is interposed, and a counter electrode thin film (5) made of acid iridium containing metallic iridium is interposed between the other electrode (6) and the insulating thin film (4). All-solid-state electrochromic device. 2. In the all-solid-state electrochromic device according to claim 1, the reversible oxidative color forming thin film (2) and the counter electrode thin film (
An all-solid-state electrochromic device having a structure in which the intervening positions of 5) are exchanged. 3. The electrode (1) is an aluminum thin film, the other electrode (6) is a tin oxide-indium oxide transparent conductive thin film, the reversible reductive color forming thin film (3) is a tungsten oxide thin film, and the insulating thin film ( 3. The all-solid-state electrochromic device according to claim 1, wherein 4) is a tantalum pentoxide thin film. 4. An anti-glare mirror for an automobile, comprising the all-solid-state electrochromic device according to any one of claims 1 to 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63307167A JPH02151839A (en) | 1988-12-05 | 1988-12-05 | Fully solid-state electrochromic element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63307167A JPH02151839A (en) | 1988-12-05 | 1988-12-05 | Fully solid-state electrochromic element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02151839A true JPH02151839A (en) | 1990-06-11 |
Family
ID=17965841
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63307167A Pending JPH02151839A (en) | 1988-12-05 | 1988-12-05 | Fully solid-state electrochromic element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02151839A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009238975A (en) * | 2008-03-27 | 2009-10-15 | Nec Corp | Printed wiring board and method of inspecting same |
| US9581875B2 (en) | 2005-02-23 | 2017-02-28 | Sage Electrochromics, Inc. | Electrochromic devices and methods |
-
1988
- 1988-12-05 JP JP63307167A patent/JPH02151839A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9581875B2 (en) | 2005-02-23 | 2017-02-28 | Sage Electrochromics, Inc. | Electrochromic devices and methods |
| US10061174B2 (en) | 2005-02-23 | 2018-08-28 | Sage Electrochromics, Inc. | Electrochromic devices and methods |
| US11567383B2 (en) | 2005-02-23 | 2023-01-31 | Sage Electrochromics, Inc. | Electrochromic devices and methods |
| JP2009238975A (en) * | 2008-03-27 | 2009-10-15 | Nec Corp | Printed wiring board and method of inspecting same |
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