JPH02151707A - Scale - Google Patents
ScaleInfo
- Publication number
- JPH02151707A JPH02151707A JP30635788A JP30635788A JPH02151707A JP H02151707 A JPH02151707 A JP H02151707A JP 30635788 A JP30635788 A JP 30635788A JP 30635788 A JP30635788 A JP 30635788A JP H02151707 A JPH02151707 A JP H02151707A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crystal member
- linear motion
- straight moving
- intensity meter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims abstract description 51
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 230000004304 visual acuity Effects 0.000 abstract 1
- 239000000523 sample Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Landscapes
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
- Optical Transform (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
本発明は半導体製造装置、超精密加工装置、等に用いら
れる超精密位置決め用に開発されたスケールに関する。DETAILED DESCRIPTION OF THE INVENTION (a) Industrial Application Field The present invention relates to a scale developed for ultra-precision positioning used in semiconductor manufacturing equipment, ultra-precision processing equipment, etc.
く口）従来の技術
従来のスケールは、マグネットの磁素であるＮ極、Ｓ極
の変化を磁気ヘッドにより検出するもの、あるいは、精
密に形成された金属薄膜の凹凸を反射光の回折と干渉に
より光学的に検知するもので、せいぜい光の波長の１０
分の１程度の分解能しか得られない。Conventional technology Conventional scales use a magnetic head to detect changes in the magnetic N and S poles of a magnet, or they use a precisely formed metal thin film to interfere with the diffraction of reflected light. It is optically detected by
Only about 1/2 of the resolution can be obtained.
半導体とりわけＶＬＳＩの集積度は１００メガビツトに
むかっており、その線幅も０．１ミクロンを割ろうとし
ている。そのためのパターン形成技術の位置決め精度は
ｏ、ｏｘミクロン、あるいは、０．００１ミクロンにな
り、従来のリニアスケールの分解能を１００倍以上、高
精度化しなければならない。The integration density of semiconductors, especially VLSI, is approaching 100 megabits, and the line width is also on the verge of breaking 0.1 micron. The positioning accuracy of the pattern forming technology for this purpose is 0, ox microns, or 0.001 microns, and the resolution must be more than 100 times higher than that of conventional linear scales.
すなわち、全く新しい位置決め用のスケールの開発が、
最先端技術の各分野で、待望きれている。In other words, the development of a completely new positioning scale
It is highly anticipated in various fields of cutting-edge technology.
（ハ） 発明が解決しようとする課題
本発明は従来不可能とされていた、０．００１ミクロン
の位置決めを実現することを技術課題としている。(c) Problems to be Solved by the Invention The technical problem of the present invention is to realize positioning of 0.001 microns, which has been considered impossible in the past.
二） 課題を解決するための手段
本発明はこのような点に鑑みて為されたものであって、
移動機構と、この移動機構の移動部一面の移動方向に沿
って形成された単結晶部材と、この移動部外に設けられ
、上記単結晶部材に光を照射するための光照射手段と、
上記移動部外に設けられ、上記単結晶部材を通して送ら
れて来る光を受けその強度を計測して成る強度計と、か
ら成り、この強度計からの出力により単結晶部材の結晶
格子を観測し、上記移動部の移動量を検出している。2) Means for solving the problem The present invention has been made in view of the above points,
a moving mechanism, a single crystal member formed along the moving direction of one side of the moving part of the moving mechanism, a light irradiation means provided outside the moving part for irradiating the single crystal member with light,
An intensity meter is provided outside the moving part and receives the light sent through the single crystal member and measures its intensity.The crystal lattice of the single crystal member is observed based on the output from this intensity meter. , the amount of movement of the moving section is detected.
ホ）作 用
単結晶部材の格子間隔を基準にして分解能の高いスケー
ルの調整が行われる。e) Operation: High-resolution scale adjustment is performed based on the lattice spacing of the single crystal member.
へ）実施例
第１図は本発明スケールの一実施例であって、（１）は
同図で示すＸ軸方向に直動する直動部（２）を有するＸ
軸精密直動機構、（３）は上記直動部（２）の高動力向
に沿って圧電素子（４）を介して形成された第１の単結
晶部材を示し、例えばシリコン単結晶が利用される。（
５）（６）は上記直動部（２）の高動力向に設けられた
第２、第３の単結晶部材であって、上記第１の単結晶部
材（３）と第２の単結晶部材（５）及び第２の単結晶部
材（５）と第３の単結晶部材（６）は等間隔になってい
る。また、上記第１〜第３の単結晶部材（２）（５）（
６）の結晶方位は同じ方向になっている。（７）は上記
第３の単結晶部材（６）側から第１の単結晶部材（３）
側へＸ線等の光を照射する照射手段を示し、具体的には
銀をターゲットとしたＸ線管が使用される。（８）は上
記照射手段（７）から照射されたＸ線を第３、第２、第
１の単結晶部材（６）（５）（３）を介して受ける強度
針であって、シンチレーションカウンタから成る。（９
）はこの強度計（８）からの出力の山又は谷部に応じて
カウントを行うウェーブメモリ、（１０）はＸ軸駆動回
路（１１）を介して上記Ｘ軸精密直動機構（１）を動作
させるマイクロコンピュータを示し、動作方向に応じて
ウェーブメモリ（９）に■カウントするかθカウントす
るかを指示する。 （１２）は上記直動機構（１）外に
設けられ、タングステン等の材料で形成された先細形状
の探針を示し、走査型トンネル電流顕微鏡用のものが使
用され、先端部の曲率半径が０．１４ｍ以上になるよう
成形されている。また、この探針（１２）は上記第１の
単結晶部材（３）から１ｍ１Ｉｎ程度に近ずけられてい
る。 （１３）は上記第１の単結晶部材（３）及び探針
（１２）間に電圧を印加する電圧印加手段、（１４）は
上記単結晶部材（３）と探針（１２）間に流れるトンネ
ル電流を計測し、電圧値に変換する電流−電圧変換器で
あり、その出力は増幅器（１５）、対数変換器（１６）
を介して比較器（１７）に与えられる。この比較器（１
７）は標準電源（１８）から与えられる基準電圧と上記
対数変換器（１６）からの出力を比較し、“Ｈ′”Ｌ”
信号を出力する。 （１９）はこの比較器（１７）の出
力を積分する積分器を示し、その出力は増幅器（２０）
へ与えられる。この増幅器（２０）からの電圧により圧
電素子（４）から成る２軸駆動機構が動作されて第１の
単結晶部材（２）と探針（３〉との間に流れる電流が一
定になるように第１の単結晶部材（３）が微動される。f) Embodiment Figure 1 shows an example of the scale of the present invention, in which (1) is an
Axial precision linear motion mechanism (3) indicates a first single crystal member formed via a piezoelectric element (4) along the high power direction of the linear motion section (2), for example, silicon single crystal is used. be done. (
5) (6) are second and third single-crystal members provided in the high-power direction of the linear motion section (2), which are connected to the first single-crystal member (3) and the second single-crystal member; The member (5), the second single crystal member (5), and the third single crystal member (6) are equally spaced. In addition, the first to third single crystal members (2) (5) (
The crystal orientations of 6) are in the same direction. (7) is the first single crystal member (3) from the third single crystal member (6) side.
An irradiation means for irradiating light such as X-rays to the side is shown, and specifically, an X-ray tube targeting silver is used. (8) is an intensity needle that receives the X-rays irradiated from the irradiation means (7) through the third, second, and first single crystal members (6), (5), and (3), and is a scintillation counter. Consists of. (9
) is a wave memory that performs counting according to the peaks or valleys of the output from this intensity meter (8), and (10) is a wave memory that performs counting according to the peaks or valleys of the output from this intensity meter (8), and (10) is a wave memory that operates the above-mentioned X-axis precision linear motion mechanism (1) via an X-axis drive circuit (11). It shows the microcomputer to be operated and instructs the wave memory (9) whether to count ① or θ according to the direction of operation. (12) is a tapered probe made of a material such as tungsten, which is installed outside the linear motion mechanism (1), and is used for scanning tunneling current microscopes, with a radius of curvature at the tip. It is molded to be 0.14 m or more. Further, this probe (12) is placed close to the first single crystal member (3) by about 1 m1In. (13) is a voltage applying means for applying a voltage between the first single crystal member (3) and the probe (12), and (14) is a voltage applying means for applying a voltage between the first single crystal member (3) and the probe (12). This is a current-voltage converter that measures tunnel current and converts it into a voltage value, and its output is sent to an amplifier (15) and a logarithmic converter (16).
to the comparator (17). This comparator (1
7) compares the reference voltage given from the standard power supply (18) and the output from the logarithmic converter (16), and determines "H'" and "L".
Output a signal. (19) shows an integrator that integrates the output of this comparator (17), and its output is sent to the amplifier (20).
given to. The voltage from this amplifier (20) operates a two-axis drive mechanism consisting of a piezoelectric element (4) so that the current flowing between the first single crystal member (2) and the probe (3) becomes constant. The first single crystal member (3) is slightly moved.
即ち、これにより、第１の単結晶部材（３）の２軸方向
への微少なずれが補正され、第１の単結晶部材（３）と
上記第２、第３の単結晶部材（５）（６）間の距離が常
に一定に保たれる。That is, as a result, the slight deviation of the first single crystal member (3) in the biaxial direction is corrected, and the first single crystal member (3) and the second and third single crystal members (5) (6) The distance between them is always kept constant.
このような、スケールにおいては照射手段（７）からの
ｘＩｌが第３、第２、第１の単結晶部材（６）（５）（
３）を通して強度針（８）に与えられる。マイクロコン
ピュータ（１０）からの指示により、直動体（２）が動
くとＸ線の通過路をシリコンの結晶格子が間欠的にさえ
切る。このため強度計（８）からは第２図に示すように
単結晶格子間隔に応じた周期で強度計（８）の出力が変
化する。ウェーブメモリ（９〉はこの強度計（８）出力
の谷部又は山部を検出してカウントを行う、そして、こ
のカウント方向はマイクロコンピュータ（１０）から与
えられる直動部（２）の原動力向により切り換えられる
。マイクロコンピュータ（１０）はこのウェーブメモリ
く９）内のカウント数に、単結晶部材（３）の格子間距
離を乗算することで直動部の移動量及び移動位置が算出
詐れる。In such a scale, xIl from the irradiation means (7) is transmitted to the third, second, and first single crystal members (6) (5) (
3) to the strength needle (8). When the translational body (2) moves according to instructions from the microcomputer (10), the silicon crystal lattice even intermittently cuts the passage of the X-rays. Therefore, the output of the intensity meter (8) changes at a period corresponding to the single crystal lattice spacing, as shown in FIG. The wave memory (9) detects the troughs or peaks of the output of the intensity meter (8) and performs counting, and this counting direction is determined by the direction of the driving force of the linear motion part (2) given from the microcomputer (10). The microcomputer (10) multiplies the count in this wave memory (9) by the interlattice distance of the single crystal member (3), thereby incorrectly calculating the amount of movement and the movement position of the linear motion part. .
第３図は本発明スケールの他の実施例を示すブロック図
であって、第１図と同一部分には同一符号を付している
。同図においては、Ｘ軸直動機構（１）の代わりにＸ軸
に対して回転可能に設けられた円筒形の回転部（２°）
を有したＸ軸精密回転機構（１゛）を設けた点である。FIG. 3 is a block diagram showing another embodiment of the scale of the present invention, in which the same parts as in FIG. 1 are given the same reference numerals. In the same figure, instead of the X-axis linear motion mechanism (1), a cylindrical rotating part (2°) provided to be rotatable with respect to the X-axis is shown.
The point is that an X-axis precision rotation mechanism (1゛) is provided.
また、第１の単結晶部材（３′）は上記回転部（２゛）
内周に圧電素子（４）を介して形成されている。また、
上記回転部（り゛）の第１の単結晶部材（３゛）外周部
にはロール状の第２、第３の単結晶部材（５’）（６’
）が設けられている。Further, the first single crystal member (3') is connected to the rotating part (2').
It is formed on the inner periphery with a piezoelectric element (4) interposed therebetween. Also,
Roll-shaped second and third single crystal members (5') (6'
) is provided.
こうした構成では回転部（２′）の回転量に応じたカウ
ント数がウェーブメモリ（１０）に保持される。マイク
ロコンピュータ（１０）でこのカウント数を格子点距離
で乗算し、回転部（２°〉の直径と円周率πで除算する
ことで回転角が求まる。In such a configuration, a count number corresponding to the amount of rotation of the rotating section (2') is held in the wave memory (10). The microcomputer (10) multiplies this count number by the lattice point distance and divides it by the diameter of the rotating part (2°) and the pi ratio π to find the rotation angle.
（ト）発明の効果
以上述べた如く本発明スケールは単結晶の格子間隔を基
準にして移動部の移動位置や移動量を検出しているので
、オングストローム単位の分解能の高い位置調整が行わ
れる。(g) Effects of the Invention As described above, the scale of the present invention detects the movement position and movement amount of the moving part based on the lattice spacing of the single crystal, so that position adjustment is performed with high resolution in angstrom units.
第１図は本発明スケールの一実施例ブロック図、第２図
は動作を説明するための説明図、第３Ｌよ
図本発明スケールの他の実施例ブロック図であ八
る。
（１）・・・Ｘ軸精密直動機構、（２）・・・直動部、
（３）（３’）（５）（５’）（６）（６’）・・・単
結晶部材、（４）・・・圧電素子、（７）・・・照射手
段、（８）・・・強度計、（９）・・・ウェーブメモリ
、（１０）・・・マイクロコンピュータ、（１１）・・
・Ｘ軸駆動回路。FIG. 1 is a block diagram of one embodiment of the scale of the present invention, FIG. 2 is an explanatory diagram for explaining the operation, and FIG. 3L is a block diagram of another embodiment of the scale of the present invention. (1)...X-axis precision linear motion mechanism, (2)...linear motion part,
(3) (3') (5) (5') (6) (6')...Single crystal member, (4)...Piezoelectric element, (7)...Irradiation means, (8). ...Intensity meter, (9)...Wave memory, (10)...Microcomputer, (11)...
・X-axis drive circuit.
Claims (1)
に沿って形成された単結晶部材と、この直動部外に設け
られ、上記単結晶部材に光を照射するための光照射手段
と、上記直動部外に設けられ、上記単結晶部材を通して
送られて来る光を受けその強度を計測して成る強度計と
、から成り、この強度計からの出力により単結晶部材の
結晶格子を観測し、上記直動部の移動量を検出すること
を特徴としたスケール。 ２）回転機構と、この回転機構の回転部一面の回転方向
に沿って形成された単結晶部材と、この回転部外に設け
られ、上記単結晶部材に光を照射するための光照射手段
と、上記回転部外に設けられ、上記単結晶部材を通して
送られて来る光を受けその強度を計測して成る強度計と
から成り、この強度計からの出力により単結晶部材の結
晶格子を観測し、上記回転部の回転量を検出することを
特徴としたスケール。 ３）上記光照射手段から照射される光はＸ線としたこと
を特徴とする特許請求の範囲第１項又は第２項記載のス
ケール。[Claims] 1) A linear motion mechanism, a single crystal member formed along the linear motion direction on one surface of the linear motion section of the linear motion mechanism, and a single crystal member provided outside the linear motion section; the light irradiation means for irradiating light onto the surface of the substrate, and an intensity meter provided outside the linear motion section that receives the light sent through the single crystal member and measures its intensity. A scale characterized in that the crystal lattice of a single crystal member is observed by the output from the scale, and the amount of movement of the linear motion part is detected. 2) a rotating mechanism, a single crystal member formed along the rotation direction of one surface of the rotating part of the rotating mechanism, and a light irradiation means provided outside the rotating part for irradiating the single crystal member with light; , an intensity meter installed outside the rotating part, which receives the light transmitted through the single crystal member and measures its intensity; and the crystal lattice of the single crystal member is observed based on the output from this intensity meter. , a scale that detects the amount of rotation of the rotating part. 3) The scale according to claim 1 or 2, wherein the light irradiated from the light irradiation means is an X-ray.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30635788A JPH02151707A (en) | 1988-12-02 | 1988-12-02 | Scale |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30635788A JPH02151707A (en) | 1988-12-02 | 1988-12-02 | Scale |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02151707A true JPH02151707A (en) | 1990-06-11 |
Family
ID=17956095
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30635788A Pending JPH02151707A (en) | 1988-12-02 | 1988-12-02 | Scale |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02151707A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6191673B1 (en) * | 1998-05-21 | 2001-02-20 | Mitsubushi Denki Kabushiki Kaisha | Current transformer |
-
1988
- 1988-12-02 JP JP30635788A patent/JPH02151707A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6191673B1 (en) * | 1998-05-21 | 2001-02-20 | Mitsubushi Denki Kabushiki Kaisha | Current transformer |
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