JPH02151455A - Intensity-of-light modulation circuit of semiconductor laser - Google Patents

Intensity-of-light modulation circuit of semiconductor laser

Info

Publication number
JPH02151455A
JPH02151455A JP63305293A JP30529388A JPH02151455A JP H02151455 A JPH02151455 A JP H02151455A JP 63305293 A JP63305293 A JP 63305293A JP 30529388 A JP30529388 A JP 30529388A JP H02151455 A JPH02151455 A JP H02151455A
Authority
JP
Japan
Prior art keywords
light intensity
semiconductor laser
constant current
intensity
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63305293A
Other languages
Japanese (ja)
Inventor
Isamu Shibata
柴田 勇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP63305293A priority Critical patent/JPH02151455A/en
Publication of JPH02151455A publication Critical patent/JPH02151455A/en
Pending legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/435Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material
    • B41J2/447Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources
    • B41J2/45Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources using light-emitting diode [LED] or laser arrays

Abstract

PURPOSE:To control the intensity of light with good accuracy by individually providing constant current sources for driving semiconductor laser having the current value corresponding to the intensity of light of each step and controlling a switching circuit on the basis of an intensity-of-light modulation signal and selecting the constant current source for driving the semiconductor laser. CONSTITUTION:A plurality of constant current sources 2, 3 and switching circuits 4, 5 for connecting the constant current sources to semiconductor laser are provided to the semiconductor laser 1 and a monitoring photodetector 7 for monitoring the intensity of the laser beam of the semiconductor laser 1 is provided. Intensity-of-light control and holding means 9, 10 equipped with a comparing means 15 for comparing the monitor output with a reference value, a feedback drive means 13 for feeding back the comparing result to the respective constant current sources 2, 3 to drive said current sources in a coincidence state and holding means 12, 12 for holding the driving current values of the constant current sources in the coincidence state are provided at every constant current sources 2, 3. A timing alteration circuit 18 for performing the operation of the one for a low intensity-of-light level among the intensity-of-light control and holding means 9, 10 at a cycle later than that of the one for a high intensity-of-light level is provided and a band alteration circuit 19 for lowering the detection band of the one for the low intensity-of-light level as compared with that of the one for the high intensity-of-light level is provided.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、半導体レーザからのレーザ光の光強度を変化
させることにより多階調性を持つ記録が可能なレーザプ
リンタ等における半導体レーザの光強度変調回路に関す
る。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to light intensity modulation of a semiconductor laser in a laser printer, etc., which is capable of recording with multi-gradation by changing the light intensity of laser light from a semiconductor laser. Regarding circuits.

従来の技術 従来、半導体レーザからのレーザ光を感光体上に露光走
査させて中間調画像を記録するレーザ記録装置において
は、半導体レーザの持つ駆動電流−光出力特性が、自然
発光領域とレーザ発振領域とで極端に変わるため、安定
した光出力を得るのが困難であった。また、感光体等の
感度が入力光パワーに対して直線的でないため、高精度
な中間調画像を感光体上に形成するのが困難であった。
Conventional technology Conventionally, in laser recording devices that record halftone images by exposing and scanning laser light from a semiconductor laser onto a photoreceptor, the driving current-light output characteristics of the semiconductor laser are determined by the spontaneous emission region and laser oscillation. It has been difficult to obtain stable light output because the light output varies drastically depending on the region. Furthermore, since the sensitivity of the photoreceptor etc. is not linear with respect to the input optical power, it has been difficult to form a highly accurate halftone image on the photoreceptor.

このような点を考慮し、従来にあっては1例えば特開昭
63−102544号公報に示されるような中間調記録
可能なレーザ記録装置がある。これは、記録光学系が持
つ非線形(上述した自然発光領域とレーザ発振領域とで
極端に変わる特性)を、半導体レーザの発光レベル指令
信号と光出力とが線形関係を持つように変えるため、入
力信号を補正テーブルを用いて線形関係に補正し、補正
後の入力信号をD/Aコンバータによりアナログ変換し
て半導体レーザを駆動させるようにしたものである。
In consideration of these points, there is a conventional laser recording apparatus capable of recording halftones, such as the one disclosed in Japanese Patent Application Laid-open No. 102544/1983. This is done in order to change the nonlinearity of the recording optical system (characteristics that vary drastically between the natural light emission region and the laser oscillation region mentioned above) so that the light emission level command signal of the semiconductor laser and the optical output have a linear relationship. The signal is corrected into a linear relationship using a correction table, and the corrected input signal is converted into analog by a D/A converter to drive a semiconductor laser.

また、半導体レーザに対する光強度変調信号のレベルが
複数であって、各々の光強度レベルの光を安定して出力
できるようにするため、複数の定電流源を変調用スイッ
チング素子を経て切換えて半導体レーザに接続状態とし
、接続された定電流源に応じて半導体レーザの光強度出
力を変化させる方式も1本出諏人により提案されている
。より具体的には、複数の定電流源中、1つは半導体し
一ザのバイアス電流近傍に設定されたものであり、残り
は、その電流値が2’:1  の関係を持つように設定
されている。この結果、前者の1つのバイアス用の半導
体レーザを共通に用いることにより、半導体レーザの駆
動電流−光出力特性のバイアス電流以上の直線的な部分
を利用し、電流源の個数を減らし、入力信号に対して直
線的に変化する光出力が得られるようにされている。
In addition, the light intensity modulation signal for the semiconductor laser has multiple levels, and in order to stably output light at each light intensity level, multiple constant current sources are switched via a modulation switching element. A method has also been proposed by Suito Ibon, in which the semiconductor laser is connected to a laser and the light intensity output of the semiconductor laser is changed in accordance with the connected constant current source. More specifically, one of the multiple constant current sources is set near the bias current of the semiconductor, and the rest are set so that their current values have a 2':1 relationship. has been done. As a result, by commonly using one of the former semiconductor lasers for bias, the linear part of the semiconductor laser's drive current-optical output characteristic that is greater than or equal to the bias current can be used to reduce the number of current sources and increase the input signal. A light output that varies linearly with respect to the angle is obtained.

発明が解決しようとする課題 前者の特開昭63−102544号公報による場合、補
正テーブルとD/Aコンバータの組合せによるため、半
導体レーザ暉動用のD/Aコンバータにおける処理時の
量子化誤差により、半導体レーザの光出力パワーに誤差
を生じ得る。
Problems to be Solved by the Invention In the case of the former Japanese Patent Application Laid-Open No. 63-102544, due to the combination of a correction table and a D/A converter, due to quantization errors during processing in the D/A converter for driving the semiconductor laser, This may cause an error in the optical output power of the semiconductor laser.

また、後者の複数の定電流源切換え方式による場合、入
力信号に対して出力パワーが線形なため。
Also, in the case of the latter multiple constant current source switching method, the output power is linear with respect to the input signal.

中間調画像の再現において、感光体の感度等の非線形部
分により、記録画像の中間調再現性が劣化してしまう。
In reproducing a halftone image, the halftone reproducibility of the recorded image deteriorates due to nonlinear parts such as the sensitivity of the photoreceptor.

そこで、各々異なる駆動電流値を持たせた複数の定電流
源をスイッチング回路とともに設け、光強度変調信号に
よりスイッチング回路をスイッチングさせて光強度変調
信号に対応する定電流源によって半導体レーザを駆動さ
せ、記録画像における中間調再現性を向上させるように
したものが提案されている。この場合、半導体レーザの
出力特性は温度等によって変動し得るので、半導体レー
ザの光強度がフォトダイオード等によりモニタされ、所
定の光強度となるように対応する定電流源がフィードバ
ック制御される。
Therefore, a plurality of constant current sources each having a different drive current value are provided together with a switching circuit, the switching circuit is switched by a light intensity modulation signal, and the semiconductor laser is driven by the constant current source corresponding to the light intensity modulation signal. A method has been proposed that improves the reproducibility of halftones in recorded images. In this case, since the output characteristics of the semiconductor laser can vary depending on temperature and the like, the light intensity of the semiconductor laser is monitored by a photodiode or the like, and the corresponding constant current source is feedback-controlled to maintain a predetermined light intensity.

しかし、光強度レベルの低いレーザ光のパワー制御時に
は、光強度レベルが低いため、半導体レーザのレーザ光
をモニタするフォトダイオード等の受光素子の出力信号
のS/Nが劣化する。よって、このような場合には低い
光強度レベルにつき、精度よく制御することはできない
However, when controlling the power of laser light with a low light intensity level, the S/N of the output signal of a light receiving element such as a photodiode that monitors the laser light of the semiconductor laser deteriorates because the light intensity level is low. Therefore, in such a case, it is not possible to accurately control the low light intensity level.

課題を解決するための手段 半導体レーザに対し異なる駆動電流値が設定された複数
の定電流源と、各定電流源毎に直列に設けられて光強度
変調信号に従いスイッチングされ対応する定電流源を前
記半導体レーザに接続させるスイッチング回路とを設け
、前記半導体レーザから射出されるレーザ光の光強度を
モニタするモニタ用受光素子を設け、このモニタ用受光
素子によるモニタ出力を各光強度レベル用の基準値と比
較する比較手段と比較結果を各定電流源にフィードバッ
クして一致する状態に駆動させるフィードバック駆動手
段と一致した状態で定電流源の駆動電流値を保持させる
保持手段とを備えた光強度制御保持手段を各定電流源毎
に設け、これらの光強度制御保持手段中の低い光強度レ
ベル用のものの動作を高い光強度レベル用のものより遅
い周期で行わせるタイミング変更回路を設けるとともに
、前記光強度制御保持手段中の低い光強度レベル用のも
のの検出帯域を高い光強度レベル用のものより下げる帯
域変更回路を設ける6 作用 光強度が高〜低に渡って各レベルに可変制御される半導
体レーザにおいて、その光強度レベルが低い時には、モ
ニタ受光素子による検出信号が微弱となってS/Nの悪
いものとなるが、低いものについては帯域変更回路を通
して検出帯域を下げることにより、得られる信号は微弱
であってもS/Nのよいものとなる。また、タイミング
変更回路により低いものについてはその光強度制御保持
回路の制御動作及び保持動作が低速で行なうことにより
、微小なる信号であっても、十分に追従した動作が可能
となり、高精度に制御できる。よって、高い光強度レベ
ル用の開動電流値のみならず、低い光強度レベル用の駆
動電流値についても、精度のよいフィードバック制御及
びその電流値保持が可能となる。
Means for Solving the Problem A plurality of constant current sources are set with different driving current values for the semiconductor laser, and each constant current source is connected in series and switched according to a light intensity modulation signal to generate a corresponding constant current source. A switching circuit connected to the semiconductor laser is provided, a monitoring light receiving element is provided for monitoring the light intensity of the laser light emitted from the semiconductor laser, and the monitor output by the monitoring light receiving element is used as a reference for each light intensity level. A light intensity comprising a comparison means for comparing the values, a feedback driving means for feeding back the comparison results to each constant current source to drive it to a matching state, and a holding means for holding the driving current value of the constant current source in a matching state. A control holding means is provided for each constant current source, and a timing change circuit is provided for causing the light intensity control holding means for low light intensity levels to operate at a slower cycle than the one for high light intensity levels; A band changing circuit is provided in which the detection band for a low light intensity level in the light intensity control holding means is lower than that for a high light intensity level.6 The operating light intensity is variably controlled at each level from high to low. In semiconductor lasers, when the light intensity level is low, the detection signal from the monitor light receiving element becomes weak and has a poor S/N ratio, but low signals can be obtained by lowering the detection band through a band changing circuit. Even if the signal is weak, it has a good S/N ratio. In addition, when the timing change circuit is low, the control and holding operations of the light intensity control holding circuit are performed at low speeds, making it possible to sufficiently follow even small signals, resulting in highly accurate control. can. Therefore, not only the opening current value for a high light intensity level but also the drive current value for a low light intensity level can be accurately feedback controlled and the current value maintained.

実施例 本発明の一実施例を図面に基づいて説明する。Example An embodiment of the present invention will be described based on the drawings.

まず、第2図により、本実施例の前提となる半導体レー
ザの光強度可変方式について説明する。
First, with reference to FIG. 2, a method of varying the light intensity of a semiconductor laser, which is the premise of this embodiment, will be explained.

第2図は半導体レーザの駆動電流−光出力特性を示すも
のであり、駆動電流に応じて光強度が変化する。より詳
細にこの特性を見ると、周知のように、バイアス電流工
でHを境として自然発光領域とレーザ発振領域との2つ
のリニア領域に分けられる。図中、実線がある温度t。
FIG. 2 shows the driving current-light output characteristic of a semiconductor laser, and the light intensity changes depending on the driving current. Looking at this characteristic in more detail, as is well known, it can be divided into two linear regions, a spontaneous emission region and a laser oscillation region, with the bias current line H as the boundary. In the figure, the solid line indicates the temperature t.

における特性を示し、破線が異なる温度し、における特
性を示す。
The dashed lines indicate the characteristics at different temperatures.

両者の対比からも判るように、この特性において、バイ
アス電流ITHは各々ITH8pITK工で示すように
温度によって変化するが、駆動電流と光強度との直線傾
き関係は温度が変化しても殆ど変化しない特性を持つ。
As can be seen from the comparison between the two, in this characteristic, the bias current ITH changes depending on the temperature as shown in ITH8pITK, but the linear slope relationship between the drive current and the light intensity hardly changes even if the temperature changes. have characteristics.

このような特性を持つ半導体レーザを用いて、その光強
度を安定させるため、半導体レーザの光強度を可変させ
る複数のステップとして、各ステップの光強度に対応す
る電流値の半導体レーザ駆動用の定電流源を個別に設け
、光強度変調信号によりスイッチング回路を制御し、半
導体レーザを駆動させる定電流源を選択すれば、半導体
レーザはその駆動電流値に基づき所定の光強度にて発光
することになる。
In order to stabilize the light intensity using a semiconductor laser with such characteristics, as a plurality of steps to vary the light intensity of the semiconductor laser, a current value for driving the semiconductor laser corresponding to the light intensity of each step is determined. If a current source is provided individually, a switching circuit is controlled by a light intensity modulation signal, and a constant current source is selected to drive the semiconductor laser, the semiconductor laser will emit light at a predetermined light intensity based on the drive current value. Become.

例えば、第2図において、光強度Pnを得るためには半
導体レーザに対してInなる開動電流値の定電流を流せ
ばよく、光強度PI11を得るためにはInなる駆動電
流値の定電流を流せばよい、そして、例えばこのような
光強度Pn、Pmを必要とすれば、定電流源として電流
値がIn、Imなるものを2個用意し、スイッチング回
路により選択す4tばよい。より具体的には、第1図に
示すような回路構成により、半導体レーザ1の光強度変
調制御がなされる。まず、半導体レーザ1に駆動電流を
流すための定電流源2,3(各々の駆動電流値をIn、
Inとする)が設けられている。これらの定電流源2,
3は各々個別に直列なるスイッチング回g4,5を介し
て前記半導体レーザ1に接続されている。何れのスイッ
チング回路4.5も′准源Vceと半導体レーザ1とに
各々接続された並列なる一対のトランジスタQiL−Q
iz、 Qよ□pQz□と、分圧抵抗R1□、 R1,
、R21,R22とからなり。
For example, in FIG. 2, in order to obtain the light intensity Pn, it is sufficient to flow a constant current with an opening current value of In to the semiconductor laser, and in order to obtain the light intensity PI11, a constant current with a driving current value of In is passed through the semiconductor laser. For example, if such light intensities Pn and Pm are required, it is sufficient to prepare two constant current sources with current values of In and Im and select 4t by a switching circuit. More specifically, the light intensity modulation of the semiconductor laser 1 is controlled by a circuit configuration as shown in FIG. First, constant current sources 2 and 3 (each driving current value is In,
In) is provided. These constant current sources 2,
3 are individually connected to the semiconductor laser 1 via switching circuits g4 and 5 connected in series. Each of the switching circuits 4.5 includes a pair of parallel transistors QiL-Q connected to the source Vce and the semiconductor laser 1, respectively.
iz, Q □pQz□, voltage dividing resistor R1□, R1,
, R21, and R22.

1−ランジスタQ iZ+ Qzzにより対応する定電
流源2.3にVceから電流を供給するとともに、トラ
ンジスタロ工1.Q□、により対応する定電流源2゜3
を選択的に半導体レーザ1に接続させるものである。こ
れらのトランジスタQエエyQz□には光強度変調信号
が変調用デコーダ6を介して入力される。
1-transistor Q iZ+ Qzz supplies current from Vce to the corresponding constant current source 2.3, and also supplies current from Vce to the corresponding constant current source 2.3. Q□, the corresponding constant current source 2゜3
is selectively connected to the semiconductor laser 1. A light intensity modulation signal is input to these transistors QAEyQz□ via a modulation decoder 6.

これにより、トランジスタQ1□tQz□を光強度変調
信号によりオン・オフ制御することにより、定電流源2
,3がともに半導体レーザ1に対して非接続状態、定電
流源2のみが半導体レーザ1に対して接続状態(駆動電
流値Inで駆動)、定電流g3のみが半導体レーザ1に
対して接続状態(駆動電流値Inで駆動)、定電流ig
3.4がともに半導体レーザ1に対して接続状態(駆動
電流値In+Imで駆動)となる4種の状態が得られ。
As a result, by controlling the transistor Q1□tQz□ on and off using the optical intensity modulation signal, the constant current source 2
, 3 are both disconnected from the semiconductor laser 1, only the constant current source 2 is connected to the semiconductor laser 1 (driven with the drive current value In), and only the constant current source g3 is connected to the semiconductor laser 1. (driven with drive current value In), constant current ig
3.4 are both connected to the semiconductor laser 1 (driven with the drive current value In+Im), resulting in four types of states.

4値(出力Oを含む)の光強度変調が可能となる。Four-value (including output O) optical intensity modulation is possible.

ここに、半導体レーザ1−の出力特性は、温度等により
変動し得るので、このような変動に対処し得るように、
定電流源2.3に対してモニターフィードバック制御系
が付加されている。まず、半導体レーザ1から射出され
るレーザ光の一部を受光モニタするモニタ用受光素子と
してのフォトダイオード7が設けられている。このフォ
トダイオード7にはモニタ出力を増幅する増幅器8が接
続されている。この増幅器8の出力側には各々の定電流
源2,3に対する光強度制御保持回路9,10が接続さ
れている。まず、光強度制御保持回路9は、比較手段と
しての比較器11、保持手段としてのアップダウンカウ
ンタ12、フィードバック駆動手段としてのD/A変換
器13によりなり、定電流源2に対してフィードバック
接続されている。まず、増幅器8により増幅されたフォ
トダイオード出力(モニタ出力)は、比較器11におい
て基準値としての基準電圧V。PIw+ax、と比較さ
れる。ここに、基準電圧VxytvLmmx+は第2図
に示した半導体レーザ1の駆動電流−光強度出力特性に
おいて、発光量Pn  (即ち、Lmax )である時
のフォトダイオード7の出力に等しくなる電圧値である
。比較器11による比較結果はHレベル又はLレベルの
デジタル2値信号としてアップダウンカウンタ12に入
力される。このアップダウンカウンタ12はクロック発
生器14からのクロック信号のタイミングにより比較器
11からの出力を計数する(アップ又はダウン)、この
カウンタ12からの出力はD/A変換器13によりアナ
ログ変換された後、定電流源2にフィードバックされ、
アナログ変換値に応じて定電流源2により半導体レーザ
1に駆動電流を流す。このようなフィードバック制御に
おいて、比較器11からの出力の極性が反転した時にア
ップダウンカウンタ12による計数動作を停止させるこ
とにより、定電流源2の駆動電流値は当初のInから制
御停止時の駆動電流値In’  に保持される。よって
、温度等により出力変動したとしても、半導体レーザ1
からの実際の光強度が2口となるように制御され、安定
する。
Here, since the output characteristics of the semiconductor laser 1- may fluctuate due to temperature, etc., in order to cope with such fluctuations,
A monitor feedback control system is added to the constant current source 2.3. First, a photodiode 7 is provided as a monitoring light-receiving element that monitors a portion of the laser light emitted from the semiconductor laser 1. An amplifier 8 for amplifying the monitor output is connected to the photodiode 7. Light intensity control and holding circuits 9 and 10 for respective constant current sources 2 and 3 are connected to the output side of this amplifier 8. First, the light intensity control holding circuit 9 includes a comparator 11 as a comparing means, an up/down counter 12 as a holding means, and a D/A converter 13 as a feedback driving means, and is connected to the constant current source 2 for feedback. has been done. First, the photodiode output (monitor output) amplified by the amplifier 8 is converted to a reference voltage V as a reference value in the comparator 11. It is compared with PIw+ax. Here, the reference voltage VxytvLmmx+ is a voltage value that is equal to the output of the photodiode 7 when the light emission amount is Pn (i.e., Lmax) in the drive current-light intensity output characteristic of the semiconductor laser 1 shown in FIG. . The comparison result by the comparator 11 is input to the up/down counter 12 as an H level or L level digital binary signal. This up/down counter 12 counts the output from the comparator 11 (up or down) according to the timing of the clock signal from the clock generator 14. The output from this counter 12 is converted into analog by the D/A converter 13. After that, it is fed back to the constant current source 2,
A driving current is applied to the semiconductor laser 1 by a constant current source 2 in accordance with the analog conversion value. In such feedback control, by stopping the counting operation by the up/down counter 12 when the polarity of the output from the comparator 11 is reversed, the drive current value of the constant current source 2 changes from the initial In to the drive when the control is stopped. The current value is held at In'. Therefore, even if the output fluctuates due to temperature etc., the semiconductor laser 1
The actual light intensity is controlled to be two intensities and stabilized.

一方、光強度制御保持回路10も同様であり、比較手段
としての比較器15、保持手段としてのアップダウンカ
ウンタ16、フィードバック駆動手段としてのD/A変
換器17によりなり、定電流源3に対してフィードバッ
ク接続されている。
On the other hand, the light intensity control holding circuit 10 is also similar, and consists of a comparator 15 as a comparing means, an up/down counter 16 as a holding means, and a D/A converter 17 as a feedback driving means. Feedback is connected.

そして、定電流源3に対する駆動電流値の制御・保持も
同様に行われる。なお、増幅器8により増幅されたフォ
トダイオード出力は、比較器15において基準値として
の基準電圧Vi+++rim+alと比較されるが、こ
の時の基準電圧V□Ffm1m)は第2図に示した半導
体レーザ1の駆動電流−光強度出力特性において1発光
量Ptn  (即ち、 La1n )である時のフォト
ダイオード7の出力に等しくなる電圧値である。
The drive current value for the constant current source 3 is controlled and maintained in the same manner. Note that the photodiode output amplified by the amplifier 8 is compared with a reference voltage Vi+++rim+al as a reference value in a comparator 15, and the reference voltage V□Ffm1m) at this time is equal to that of the semiconductor laser 1 shown in FIG. This is a voltage value that is equal to the output of the photodiode 7 when one light emission amount Ptn (that is, La1n) is determined in the drive current-light intensity output characteristic.

ところで、光強度Pm用の強度制御保持回路10側にお
ける動作においては、この光強度Pn+なるレベルは光
強度Pnなるレベルに比べ、発光光量が少ない(レベル
が低い)ため、制御・保持用のフォトダイオード7の出
力も少なくなって微弱なため、S/Nも悪くなってしま
う。この点1本実施例では光強度Pmのように光強度レ
ベルの低いもの程、低速(遅い周期)で制御・保持動作
を行わせるため、光強度制御保持回路10中のアップダ
ウンカウンタ16のクロック入力に対しタイミング変更
回路としての分周器18が付加されている。即ち、クロ
ック発生器14からのクロック信号をこの分周器18で
分周した分周クロック信号でアップダウンカウンタ16
を動作させることにより、アップダウンカウンタ12側
よりも低速で計数動作することになる。よって、フォト
ダイオード7からの出力が小さくても計数時間が十分に
あり、高精度の制御が可能となる。また、本実施例にあ
っては、光強度レベルが低い場合にS/Nが悪くなる点
を改善するため、増幅器8と比較器15との間に抵抗R
、コンデンサCによる帯域変更回路としての低域通過フ
ィルタLPF19が挿入されている。このLPF19に
より検出系の検出帯域を下げることにより、増幅器8か
らの信号が微弱であっても、S/Nが向上したものとな
り、比較器15による比較処理に供される。
By the way, in the operation on the side of the intensity control and holding circuit 10 for light intensity Pm, since the level of light intensity Pn+ is smaller (lower level) than the level of light intensity Pn, the control/holding photo The output of the diode 7 also decreases and is weak, resulting in poor S/N. Regarding this point 1, in this embodiment, the lower the light intensity level, such as the light intensity Pm, the lower the light intensity level, the slower the control/holding operation is performed. A frequency divider 18 as a timing change circuit is added to the input. In other words, the up/down counter 16 uses a frequency-divided clock signal obtained by dividing the clock signal from the clock generator 14 by the frequency divider 18.
By operating the up/down counter 12 side, the counting operation is performed at a lower speed than the up/down counter 12 side. Therefore, even if the output from the photodiode 7 is small, there is sufficient counting time and highly accurate control is possible. Furthermore, in this embodiment, a resistor R is provided between the amplifier 8 and the comparator 15 in order to improve the problem of poor S/N when the light intensity level is low.
, a low-pass filter LPF19 as a band changing circuit using a capacitor C is inserted. By lowering the detection band of the detection system using the LPF 19, even if the signal from the amplifier 8 is weak, the signal-to-noise ratio is improved, and the signal is subjected to comparison processing by the comparator 15.

ここに、前記アップダウンカウンタ12.16に対して
は、第1図に示すように、その計数開始を指示する信号
C0NTl、2が計数制御回路2o、21から与えられ
ている。即ち、信号C0NT1,2により上述したよう
な制御動作が開始し、カウンタ12,16の極性が反転
した時に、計数制御回路20.21によりこれらのカウ
ンタ12゜16の計数動作を停止させ、半導体レーザ1
には保持された一定電流(能動電流値)が流れるように
制御させる。ところで、本実施例にあっては。
As shown in FIG. 1, the up/down counters 12.16 are supplied with signals C0NTl, 2 from the counting control circuits 2o, 21 instructing them to start counting. That is, when the above-described control operation is started by the signals C0NT1 and C0NT2 and the polarities of the counters 12 and 16 are reversed, the counting control circuits 20 and 21 stop the counting operations of these counters 12 and 16, and the semiconductor laser 1
is controlled so that a maintained constant current (active current value) flows. By the way, in this example.

例えばレーザプリンタに適用する場合であれば、光強度
レベルの高い場合の半導体レーザ1の出力制御はレーザ
光の主走査毎の周期で行い、光強度レベルの低い場合の
半導体レーザ1の出力制御はもつと遅くページ毎の周期
で行わせるものである。
For example, when applied to a laser printer, the output control of the semiconductor laser 1 when the light intensity level is high is performed at the cycle of each main scanning of the laser beam, and the output control of the semiconductor laser 1 when the light intensity level is low is performed. The other one is slower and is performed at a cycle for each page.

よって、C0UTI、2としては、例えば第3図に示す
ようにタイミング信号として与えられる。
Therefore, C0UTI,2 is given as a timing signal as shown in FIG. 3, for example.

まず、同図(a)は感光体く図示せず)の走査開始位置
近傍に設置されて走査レーザ光を受けるフォトダイオー
ドからの出力信号であり、主走査毎(T□ :主走査期
間)に出力されて印字タイミング信号となるものである
。このような印字タイミング信号を基準に、その印字期
間T2外となる数百μsの期間T3中において、信号C
0NTlが1(レベルとなり、アップダウンカウンタ1
2にイネーブル信号が与えられ(同図(d)参照)計数
開始状態となる。その後、信号CON T 1がLレベ
ルとなって、第3図(d)に示すように比較器11から
の比較出力の極性がLレベルからI−Iレベルに極性が
変化した時に、カウンタ12は計数を停止し、光強度制
御保持回路9による制御・保持動作が完了し、次の主走
査期間T1中の印字期間T8には駆動電流値Inに保持
される。
First, (a) in the same figure shows an output signal from a photodiode that is installed near the scanning start position of the photoreceptor (not shown) and receives scanning laser light, and is output every main scanning (T□: main scanning period). This signal is output as a print timing signal. Based on such a printing timing signal, during a period T3 of several hundred μs outside the printing period T2, the signal C
0NTl becomes 1 (level, up/down counter 1
2 is given an enable signal (see (d) in the same figure) and enters a counting start state. Thereafter, when the signal CON T 1 becomes L level and the polarity of the comparison output from the comparator 11 changes from L level to I-I level as shown in FIG. 3(d), the counter 12 Counting is stopped, the control/holding operation by the light intensity control/holding circuit 9 is completed, and the driving current value is held at the driving current value In during the printing period T8 in the next main scanning period T1.

一方、印字期間T2外なる期間T3は、通常、数百μs
の短時間であり、この期間内に光強度レベルPnだけで
なく、光強度レベルPmをも制御しようとすると、光検
出系の検出帯域が広くなって、特に低い光強度レベルP
m側の制御においては、信号のS/Nの劣化を招く。そ
こで、この低いほうの光強度レベルpHの制御について
は、ページ毎に制御を行わせるものである。第3図(b
)はページ信号を示し、1ページの印字期間T4中はH
レベルとなっている。ここに、ページ信号には、連続印
字時であっても、必ず紙送り用の期間T、がある。この
期間T5は印字速度にもよるが、0、数秒〜数秒程度あ
り、この期間T、内に信号C0NT2を出力させ、かつ
、分周器18からの低速の分周クロック信号によりアッ
プダウンカウンタ16を計数動作させ、上記の光強度レ
ベルPnの場合と同様に、光強度レベルPmの制御を行
えばよい。
On the other hand, the period T3 outside the printing period T2 is usually several hundred μs.
If you attempt to control not only the light intensity level Pn but also the light intensity level Pm within this period, the detection band of the photodetection system will become wider, and the
In the m-side control, the S/N ratio of the signal deteriorates. Therefore, control of this lower light intensity level pH is performed on a page-by-page basis. Figure 3 (b
) indicates a page signal, which is H during the printing period T4 of one page.
level. Here, the page signal always has a period T for paper feeding even during continuous printing. This period T5 is from 0 to several seconds depending on the printing speed, and the signal C0NT2 is output within this period T, and the up/down counter 16 is controlled by the low-speed divided clock signal from the frequency divider 18. The light intensity level Pm may be controlled in the same manner as the light intensity level Pn described above.

ついても、精度のよいフィードバック制御及びその電流
値保持が可能となり、熱等による半導体レーザの特性変
動に有効に対処できる。
However, it is possible to perform accurate feedback control and maintain the current value, and it is possible to effectively deal with fluctuations in the characteristics of the semiconductor laser due to heat or the like.

発明の効果 本発明は、上述したように構成したので、光強度が高〜
低に渡って各レベルに可変制御される半導体レーザにお
いて、その光強度レベルが低い時には、モニタ受光素子
による検出信号が微弱となってS / Nの悪いものと
なるが、光強度レベルの低いものについてはモニタ用受
光素子からのモニタ出力が帯域変更回路を通して検出j
’jF Qが下げられるので、微弱な信号であってもS
/Hのよいものとなり、また、光強度レベルの低いもの
についてはタイミング変更回路により対応する光強度制
御保持回路の制御動作及び保持動作を低速で行なうので
、微弱なる信号であっても、十分に信号処理時間を確保
でき、精度の高い制御動作が可能となり、よって、高い
光強度レベル用の駆動電流値のみならず、低い光強度レ
ベル用の駆動電流値に
Effects of the Invention Since the present invention is constructed as described above, the light intensity is high to high.
In semiconductor lasers that are variably controlled at various levels over low light intensity levels, when the light intensity level is low, the detection signal from the monitor light receiving element becomes weak and the S/N is poor, but when the light intensity level is low, The monitor output from the monitor light receiving element is detected through the band changing circuit.
'jF Q is lowered, so even a weak signal
/H, and for low light intensity levels, the timing change circuit performs the control and holding operations of the corresponding light intensity control holding circuit at low speed, so even weak signals can be Signal processing time can be secured, and highly accurate control operation is possible. Therefore, the drive current value can be adjusted not only for high light intensity levels but also for low light intensity levels.

【図面の簡単な説明】[Brief explanation of the drawing]

図面は本発明の一実施例を示すもので、第1図は回路図
、第2図は半導体レーザの駆動電流−光強度出力特性図
、第3図はタイミングチャートである。 1・・半導体レーザ、2,3・・・定電流源、4,5・
・・スイッチング回路、7・・・モニタ用受光素子、9
゜1o・・・光強度制御保持回路、11・・・比較手段
、]−2・・・保持手段、]、3・・・フィードバック
駆動手段、15・・・比較手段、16・・・保持手段、
17・・・フィードバック駆動手段、18・・・タイミ
ング変更回路、19・・・帯域変更回路
The drawings show an embodiment of the present invention, and FIG. 1 is a circuit diagram, FIG. 2 is a diagram of driving current-light intensity output characteristics of a semiconductor laser, and FIG. 3 is a timing chart. 1... Semiconductor laser, 2, 3... Constant current source, 4, 5...
...Switching circuit, 7...Monitor light receiving element, 9
゜1o... Light intensity control holding circuit, 11... Comparison means, ]-2... Holding means, ], 3... Feedback driving means, 15... Comparing means, 16... Holding means ,
17... Feedback drive means, 18... Timing change circuit, 19... Band change circuit

Claims (1)

【特許請求の範囲】[Claims]  半導体レーザと、この半導体レーザに対し異なる駆動
電流値が設定された複数の定電流源と、各定電流源毎に
直列に設けられ光強度変調信号に対応する定電流源を前
記半導体レーザに接続させるスイッチング回路と、前記
半導体レーザから射出されるレーザ光の光強度をモニタ
するモニタ用受光素子と、前記モニタ用受光素子による
モニタ出力を各光強度レベルの基準値と比較する比較手
段と比較結果を各定電流源にフィードバックして一致す
る状態に駆動させるフィードバック駆動手段と一致した
状態で定電流源の駆動電流値を保持させる保持手段とを
備えて各定電流源毎に設けられた光強度制御保持手段と
、これらの光強度制御保持手段中の低い光強度レベル用
のものの動作を高い光強度レベル用のものより遅い周期
で行わせるタイミング変更回路と、前記光強度制御保持
手段中の低い光強度レベル用のものの検出帯域を高い光
強度レベル用のものより下げる帯域変更回路とからなる
ことを特徴とする半導体レーザの光強度変調回路。
A semiconductor laser, a plurality of constant current sources each having a different driving current value set for the semiconductor laser, and a constant current source provided in series for each constant current source and corresponding to a light intensity modulation signal are connected to the semiconductor laser. a monitoring light receiving element for monitoring the light intensity of the laser light emitted from the semiconductor laser, a comparison means for comparing the monitor output from the monitoring light receiving element with a reference value for each light intensity level, and a comparison result. A light intensity control device provided for each constant current source includes a feedback driving means for feeding back the current value to each constant current source to drive it to a matched state, and a holding means for holding the drive current value of the constant current source in a matched state. control holding means; a timing change circuit for causing those of the light intensity control holding means for low light intensity levels to operate at a slower cycle than those for high light intensity levels; 1. A light intensity modulation circuit for a semiconductor laser, comprising a band changing circuit that lowers a detection band for a light intensity level from that for a high light intensity level.
JP63305293A 1988-12-02 1988-12-02 Intensity-of-light modulation circuit of semiconductor laser Pending JPH02151455A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63305293A JPH02151455A (en) 1988-12-02 1988-12-02 Intensity-of-light modulation circuit of semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63305293A JPH02151455A (en) 1988-12-02 1988-12-02 Intensity-of-light modulation circuit of semiconductor laser

Publications (1)

Publication Number Publication Date
JPH02151455A true JPH02151455A (en) 1990-06-11

Family

ID=17943356

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63305293A Pending JPH02151455A (en) 1988-12-02 1988-12-02 Intensity-of-light modulation circuit of semiconductor laser

Country Status (1)

Country Link
JP (1) JPH02151455A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19504712A1 (en) * 1995-02-14 1996-08-22 Linotype Hell Ag Werk Kiel Method and circuit arrangement for regulating the light output of a laser diode
EP1967371A1 (en) 2007-03-05 2008-09-10 Ricoh Company, Ltd. Light amount control, optical writing, and image forming apparatuses

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19504712A1 (en) * 1995-02-14 1996-08-22 Linotype Hell Ag Werk Kiel Method and circuit arrangement for regulating the light output of a laser diode
DE19504712C2 (en) * 1995-02-14 1998-02-05 Linotype Hell Ag Werk Kiel Process for controlling the light output of a laser diode
EP1967371A1 (en) 2007-03-05 2008-09-10 Ricoh Company, Ltd. Light amount control, optical writing, and image forming apparatuses
US8076626B2 (en) 2007-03-05 2011-12-13 Ricoh Company, Ltd. Light amount control, optical writing, and image forming apparatuses having a plurality of drive-current setting units

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