JPH02146163U - - Google Patents
Info
- Publication number
- JPH02146163U JPH02146163U JP5260389U JP5260389U JPH02146163U JP H02146163 U JPH02146163 U JP H02146163U JP 5260389 U JP5260389 U JP 5260389U JP 5260389 U JP5260389 U JP 5260389U JP H02146163 U JPH02146163 U JP H02146163U
- Authority
- JP
- Japan
- Prior art keywords
- temperature side
- high temperature
- low temperature
- accommodated
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010453 quartz Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000005192 partition Methods 0.000 claims description 3
- 239000003708 ampul Substances 0.000 claims description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
第１図は本考案の一実施例を示す要部断面図、
第２図は本考案の他の実施例を示す要部断面図、
第３図は従来例を示す断面図である。
図中、１１……石英アンプル、１２……仕切部
、１４……キヤピラリー、１５……高温側、１６
……低温側、１７……石英ボート、１８……逆止
弁である。
FIG. 1 is a cross-sectional view of essential parts showing an embodiment of the present invention;
FIG. 2 is a cross-sectional view of main parts showing another embodiment of the present invention;
FIG. 3 is a sectional view showing a conventional example. In the figure, 11...quartz ampoule, 12...partition, 14...capillary, 15...high temperature side, 16
...low temperature side, 17...quartz boat, 18...check valve.
Claims (1)
共にその仕切部にキヤピラリーを設け、その高温
側に石英ボート及びガリウムを収容すると共に低
温側に砒素を収容した砒化ガリウム単結晶製造装
置において、上記仕切部に、低温側から高温側に
ガスを流しその逆の流れを阻止する逆止弁を設け
たことを特徴とする砒化ガリウム単結晶製造装置
。 In a gallium arsenide single crystal production apparatus in which the inside of a quartz ampoule is partitioned into a high temperature side and a low temperature side, and a capillary is provided in the partition, a quartz boat and gallium are accommodated on the high temperature side, and arsenic is accommodated on the low temperature side, the above partition A gallium arsenide single crystal manufacturing apparatus characterized in that a check valve is provided in the section to allow gas to flow from the low temperature side to the high temperature side and prevent the reverse flow.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5260389U JPH02146163U (en) | 1989-05-09 | 1989-05-09 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5260389U JPH02146163U (en) | 1989-05-09 | 1989-05-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02146163U true JPH02146163U (en) | 1990-12-12 |
Family
ID=31573042
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5260389U Pending JPH02146163U (en) | 1989-05-09 | 1989-05-09 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02146163U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995033873A1 (en) * | 1994-06-02 | 1995-12-14 | Kabushiki Kaisha Kobe Seiko Sho | Compound monocrystal manufacturing method and apparatus |
-
1989
- 1989-05-09 JP JP5260389U patent/JPH02146163U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995033873A1 (en) * | 1994-06-02 | 1995-12-14 | Kabushiki Kaisha Kobe Seiko Sho | Compound monocrystal manufacturing method and apparatus |