JPH02146163U - - Google Patents

Info

Publication number
JPH02146163U
JPH02146163U JP5260389U JP5260389U JPH02146163U JP H02146163 U JPH02146163 U JP H02146163U JP 5260389 U JP5260389 U JP 5260389U JP 5260389 U JP5260389 U JP 5260389U JP H02146163 U JPH02146163 U JP H02146163U
Authority
JP
Japan
Prior art keywords
temperature side
high temperature
low temperature
accommodated
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5260389U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP5260389U priority Critical patent/JPH02146163U/ja
Publication of JPH02146163U publication Critical patent/JPH02146163U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP5260389U 1989-05-09 1989-05-09 Pending JPH02146163U (ar)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5260389U JPH02146163U (ar) 1989-05-09 1989-05-09

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5260389U JPH02146163U (ar) 1989-05-09 1989-05-09

Publications (1)

Publication Number Publication Date
JPH02146163U true JPH02146163U (ar) 1990-12-12

Family

ID=31573042

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5260389U Pending JPH02146163U (ar) 1989-05-09 1989-05-09

Country Status (1)

Country Link
JP (1) JPH02146163U (ar)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995033873A1 (fr) * 1994-06-02 1995-12-14 Kabushiki Kaisha Kobe Seiko Sho Procede et dispositif de production d'un monocristal macle

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995033873A1 (fr) * 1994-06-02 1995-12-14 Kabushiki Kaisha Kobe Seiko Sho Procede et dispositif de production d'un monocristal macle

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