JPH02145823U - - Google Patents
Info
- Publication number
- JPH02145823U JPH02145823U JP5570489U JP5570489U JPH02145823U JP H02145823 U JPH02145823 U JP H02145823U JP 5570489 U JP5570489 U JP 5570489U JP 5570489 U JP5570489 U JP 5570489U JP H02145823 U JPH02145823 U JP H02145823U
- Authority
- JP
- Japan
- Prior art keywords
- frequency
- output
- absorption cell
- standard
- magnetic field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010521 absorption reaction Methods 0.000 claims description 13
- 230000003068 static effect Effects 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000001514 detection method Methods 0.000 claims description 3
- 230000003595 spectral effect Effects 0.000 claims 4
- 230000007704 transition Effects 0.000 claims 4
- 238000000862 absorption spectrum Methods 0.000 claims 3
- 239000000126 substance Substances 0.000 claims 3
- 230000003287 optical effect Effects 0.000 claims 2
- 230000006641 stabilisation Effects 0.000 claims 2
- 238000011105 stabilization Methods 0.000 claims 2
- 239000010421 standard material Substances 0.000 claims 2
- 230000001678 irradiating effect Effects 0.000 claims 1
- 230000000087 stabilizing effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
Landscapes
- Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
Description
第１図は本考案に係る周波数標準器の一実施例
を示す構成ブロツク図、第２図は電磁波吸収の場
合のＲｂ８７のエネルギー準位を示す図、第３図
は周波数標準器の先行技術を示す構成ブロツク図
、第４図は誘導放出の場合のＲｂ８７のエネルギ
ー準位を示す図である。
３０……半導体レーザ、３１……吸収セル、３
２……光検出器、３４……第１の増幅手段、３５
，３９……ＰＩＤ制御部、３６……加算器、３８
……第２の増幅手段、４０……発振器、４１……
位相変調器、４３……周波数合成器、４４……空
胴共振器、４６……検出手段、４７……静磁場制
御部、４８……静磁場コイル。
Figure 1 is a configuration block diagram showing an embodiment of the frequency standard according to the present invention, Figure 2 is a diagram showing the energy level of Rb 87 in the case of electromagnetic wave absorption, and Figure 3 is a prior art of the frequency standard. FIG. 4 is a diagram showing the energy level of Rb 87 in the case of stimulated emission. 30... Semiconductor laser, 31... Absorption cell, 3
2...Photodetector, 34...First amplification means, 35
, 39... PID control unit, 36... Adder, 38
... second amplification means, 40 ... oscillator, 41 ...
Phase modulator, 43... Frequency synthesizer, 44... Cavity resonator, 46... Detection means, 47... Static magnetic field control unit, 48... Static magnetic field coil.
Claims (1)
を有する標準物質を封入した吸収セルに照射し、
またこの吸収セルに電磁波を照射して前記標準物
質の超微細スペクトル遷移を生じさせ、この超微
細スペクトル遷移に基づいて標準周波数を発生さ
せる周波数標準器において、 吸収セルに照射される光のパワー密度を検出す
る検出手段と、この検出手段の出力に基づく強度
の静磁場を吸収セルに印加する静磁場印加手段と
を備え、光パワー密度による共鳴周波数の変化を
静磁場の変化で相殺するように構成したことを特
徴とする周波数標準器。 (2) 所定の周波数の光を特定の吸収スペクトル
を有する標準物質を封入した吸収セルに照射し、
またこの吸収セルに電磁波を照射して前記標準物
質を超微細スペクトル遷移を生じさせ、この超微
細スペクトル遷移に基づいて標準周波数を発生さ
せる周波数標準器において、 半導体レーザと、この半導体レーザの出力光を
第１の周波数で変調する第１の変調手段と、前記
半導体レーザの出力光が照射されその内部に特定
の吸収スペクトルを有する標準物質を封入した吸
収セルと、この吸収セルの透過光を検出する光検
出器と、発振器と、この発振器の出力を第２の周
波数で変調する第２の変調手段と、この第２の変
調手段の出力を逓倍して前記吸収セルに電磁波を
加える電磁波発生手段と、前記光検出器の出力を
前記第１の周波数に関連する周波数で同期検波す
る第１の増幅手段と、この第１の増幅手段の出力
に基づいて前記半導体レーザの出力光の周波数を
安定化する周波数安定化手段と、前記光検出器の
出力を前記第２の周波数に関連する周波数で同期
検波する第２の増幅手段と、この第２の増幅手段
の出力に基づいて前記発振器の出力周波数を制御
する周波数制御手段と、前記吸収セルに照射され
る光のパワー密度を検出する検出手段と、この検
出手段の出力に基づく強度の静磁場を吸収セルに
印加する静磁場印加手段とを備え、光パワー密度
による共鳴周波数の変化を静磁場の変化で相殺す
るように構成したことを特徴とする周波数標準器
。[Scope of claims for utility model registration] (1) Irradiating light of a predetermined frequency to an absorption cell containing a standard substance with a specific absorption spectrum,
In addition, in a frequency standard device that irradiates this absorption cell with electromagnetic waves to generate an ultrafine spectral transition of the standard material and generates a standard frequency based on this ultrafine spectral transition, the power density of the light irradiated to the absorption cell and a static magnetic field applying means that applies a strong static magnetic field to the absorption cell based on the output of the detecting means, so that the change in the resonance frequency due to the optical power density is offset by the change in the static magnetic field. A frequency standard device characterized by the following configuration. (2) Irradiate light of a predetermined frequency to an absorption cell containing a standard substance with a specific absorption spectrum,
In addition, in a frequency standard device that irradiates this absorption cell with electromagnetic waves to cause ultrafine spectral transitions in the standard material and generates a standard frequency based on the ultrafine spectral transitions, a semiconductor laser and the output light of this semiconductor laser are used. an absorption cell that is irradiated with the output light of the semiconductor laser and has a standard substance having a specific absorption spectrum sealed therein, and detects the transmitted light of the absorption cell. an oscillator, a second modulating means for modulating the output of the oscillator at a second frequency, and an electromagnetic wave generating means for multiplying the output of the second modulating means and applying electromagnetic waves to the absorption cell. a first amplifying means for synchronously detecting the output of the photodetector at a frequency related to the first frequency; and stabilizing the frequency of the output light of the semiconductor laser based on the output of the first amplifying means. frequency stabilization means for synchronously detecting the output of the photodetector at a frequency related to the second frequency; and a frequency stabilization means for synchronously detecting the output of the photodetector at a frequency related to the second frequency; A frequency control means for controlling the frequency, a detection means for detecting the power density of the light irradiated onto the absorption cell, and a static magnetic field applying means for applying a static magnetic field having an intensity based on the output of the detection means to the absorption cell. A frequency standard device characterized in that it is configured so that changes in resonance frequency due to optical power density are canceled out by changes in static magnetic field.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5570489U JPH02145823U (en) | 1989-05-15 | 1989-05-15 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5570489U JPH02145823U (en) | 1989-05-15 | 1989-05-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02145823U true JPH02145823U (en) | 1990-12-11 |
Family
ID=31578895
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5570489U Pending JPH02145823U (en) | 1989-05-15 | 1989-05-15 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02145823U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014197734A (en) * | 2013-03-29 | 2014-10-16 | セイコーエプソン株式会社 | Quantum interference device, atomic oscillator, magnetic sensor, and method for manufacturing quantum interference device |
-
1989
- 1989-05-15 JP JP5570489U patent/JPH02145823U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014197734A (en) * | 2013-03-29 | 2014-10-16 | セイコーエプソン株式会社 | Quantum interference device, atomic oscillator, magnetic sensor, and method for manufacturing quantum interference device |
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