JPH0214511A - Mask for x-ray exposure use and its manufacture - Google Patents

Mask for x-ray exposure use and its manufacture

Info

Publication number
JPH0214511A
JPH0214511A JP63164236A JP16423688A JPH0214511A JP H0214511 A JPH0214511 A JP H0214511A JP 63164236 A JP63164236 A JP 63164236A JP 16423688 A JP16423688 A JP 16423688A JP H0214511 A JPH0214511 A JP H0214511A
Authority
JP
Japan
Prior art keywords
ray
thin film
film
unit exposure
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63164236A
Other languages
Japanese (ja)
Inventor
Fuminobu Noguchi
野口 文信
Shoji Tanaka
正二 田中
Masao Otaki
大瀧 雅央
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toppan Inc
Original Assignee
Toppan Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toppan Printing Co Ltd filed Critical Toppan Printing Co Ltd
Priority to JP63164236A priority Critical patent/JPH0214511A/en
Publication of JPH0214511A publication Critical patent/JPH0214511A/en
Pending legal-status Critical Current

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  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To prevent an inconvenience such as a fog or the like during a developing operation by a method wherein a metal foil layer with a desired thickness is formed at an outer periphery of a unit exposure region in order to form the unit exposure region densely. CONSTITUTION:A silicon nitride film 2 both as an X-ray transmitting thin film and as a protective film is formed on both faces of a silicon wafer 1 forming a sheet-like substrate; after that, a tungsten film as an X-ray absorbing thin film 3 is formed on one face of the sheet-like substrate. Then, one part of the silicon nitride film 2 on the rear surface of the sheet-like substrate is removed; a window 4 for back-etching use in formed; a resist is formed on the surface; the X-ray absorbing thin film 3 is patterned. Then, a transcription sheet 8 formed by successively laminating an adhesion layer 5, a gold foil 6 and an exfoliation paper 7 which have been stamped in advance to a shape prescribing a unit exposure region is piled up in a prescribed position; the exfoliation paper is stripped off; a gold foil layer is formed at an outer periphery of the unit exposure region. Then, silicon is removed from the window 4 for back-etching use; an opening part 9 is formed; a mask for X-ray exposure use is obtained. Then, the unit exposure region can be formed densely.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明はX線露光用マスク及びその製造方法に関する。[Detailed description of the invention] (Industrial application field) The present invention relates to an X-ray exposure mask and a method for manufacturing the same.

(従来の技術) −mにX線露光用マスクはX線を吸収する重金属パター
ンとその重金属パターンを支持するX titの吸収の
少ない軽元素の膜と、その膜の外周を固定する伜から成
っている。
(Prior art) - An X-ray exposure mask consists of a heavy metal pattern that absorbs X-rays, a light element film that supports the heavy metal pattern and that absorbs less X tit, and a film that fixes the outer periphery of the film. ing.

X線を吸収する重金属パターンはAu、TaW、PLl
Mo、Re、等原子番号の大きい吻ゴで構成され厚さ0
.2〜3μmの微細回路バターンが形成されている。
Heavy metal patterns that absorb X-rays include Au, TaW, and PLl.
Composed of motes with large atomic numbers such as Mo, Re, etc., and has a thickness of 0.
.. A fine circuit pattern of 2 to 3 μm is formed.

重金嘱パターンを支持する膜は0.1〜5μmのjIさ
のSiN、BN、SiC,Be、ポリイミド等のX線透
過性薄膜から成っている。
The film supporting the heavy metal pattern is made of an X-ray transparent thin film of SiN, BN, SiC, Be, polyimide, etc. with a jI of 0.1 to 5 μm.

枠材は厚さ0.3〜3μmのSi等比較的剛性のエツチ
ング除去可能な物質からなり、回路等露光領域を含む窓
が開けられている。
The frame material is made of a relatively rigid material such as Si that can be removed by etching and has a thickness of 0.3 to 3 .mu.m, and has a window containing an exposed area such as a circuit.

X線露光はこの様なX線露光用マスクを介して露光され
るべきレジスhiを形成した基板にX線を照射し、レジ
スト層にパターンを形成するのである。
In X-ray exposure, the substrate on which the resist hi to be exposed is formed is irradiated with X-rays through such an X-ray exposure mask, thereby forming a pattern on the resist layer.

(発明が解決しようとする課題) X線露光では通常、比較的大型の被露光基板に同一パタ
ーンを多数個面付けするために、順次、マスクまたは基
板を動かして1チツプ毎基板にパターンを形成する、い
わゆるステップアンドリピート方式が採用されている。
(Problem to be Solved by the Invention) In X-ray exposure, in order to apply a large number of identical patterns onto a relatively large substrate to be exposed, the pattern is formed on each chip by sequentially moving the mask or substrate. A so-called step-and-repeat method is used.

一般にその単位露光域を規定するためにX線吸収性金属
パターンと同一層で同じ厚さのX線吸収層が該領域外周
に形成されている。
Generally, in order to define the unit exposure area, an X-ray absorbing layer that is the same layer and has the same thickness as the X-ray absorbing metal pattern is formed on the outer periphery of the area.

しかるに、各々の単位露光領域の外周部では、各々の単
位領域を露光するたびにX線が重なって少量ながら照射
される。勿論、この部分は本来X線がただ一回照射され
るだけでは何ら問題のない量だが、漏れや回折などの現
象により本来X線が照射される部分とのコントラストが
でず、回数が2回以上重なると、本来X線が照射される
部分との区別が困難になり、現像の際かぶり等の不都合
が生じる。
However, at the outer periphery of each unit exposure area, a small amount of X-rays overlap each time each unit area is exposed. Of course, there would be no problem if this area was originally irradiated with X-rays only once, but due to phenomena such as leakage and diffraction, the contrast with the area that was originally irradiated with X-rays was not created, and the number of X-rays was irradiated twice. If the areas overlap more than this, it becomes difficult to distinguish between the areas that are originally irradiated with X-rays, and problems such as fogging occur during development.

本発明はかかる従来技術の欠点に漏み、新規なXvA露
光用マスク及びその製造方法を提案するものである。
The present invention overcomes the drawbacks of the prior art and proposes a novel XvA exposure mask and method for manufacturing the same.

(課題を解決するための手段) すなわち本発明は、X線を吸収する重金属パターンとそ
の重金属パターンを支持するX線の吸収の少ない軽元素
の膜とその膜の外周を固定する枠からなるX線マスクに
於て、接着層を介さず若しくは介して単位露光領域の外
周に所望の厚さの金属箔層が形成された事を特徴とする
X線マスク、及び、板状基板の主面上にX線透過性薄膜
を積層し、他面上には支持枠下面に相当する部分に保護
膜を形成する工程と、該XM透透過性膜膜上X線吸収性
金属パターンを形成する工程と、板状基板の所望領域を
主面の反対側からエツチング除去して窓を形成する工程
と、単位露光領域の外周に転写で金属箔層若しくは接着
層と金属箔層を形成する工程とからなるX線露光用マス
クの製造方法である。
(Means for Solving the Problems) That is, the present invention provides an An X-ray mask characterized in that a metal foil layer of a desired thickness is formed on the outer periphery of a unit exposure area without or through an adhesive layer, and on the main surface of a plate-shaped substrate. a step of laminating an X-ray transparent thin film on the substrate, forming a protective film on the other surface in a portion corresponding to the lower surface of the support frame; and a step of forming an X-ray absorbing metal pattern on the XM-transparent film. , a process of etching away a desired area of a plate-shaped substrate from the opposite side of the main surface to form a window, and a process of forming a metal foil layer or an adhesive layer and a metal foil layer by transfer on the outer periphery of the unit exposure area. This is a method for manufacturing an X-ray exposure mask.

以下本発明を更に詳細に説明する。The present invention will be explained in more detail below.

X線吸収性金属パターンはAu、Ta、W、Pt、MO
,Re、等で形成されている。X線透過性支持“り)よ
SiN  BN、SiCBe  ポリイミド等から成っ
ている。支持枠は主にシリコンへ坂からなっている。
X-ray absorbing metal patterns include Au, Ta, W, Pt, MO
, Re, etc. The X-ray transparent support is made of SiN BN, SiCBe polyimide, etc. The support frame is mainly made of silicon.

X線吸収性金属パターンの露光領域を規定する外周部に
は金箔等の金属箔が形成されている。この場合、接着層
が必要な場合と必要としない場合がある。また、本発明
のX線マスクの製法はまずシリコンウェー八等の(瓦状
基板の主面にX線透過性薄膜を、他面に保;翫膜を形成
する。尚、主面や他面の他に側面等に設けても、其は設
計の範囲内の工夫に過ぎない。
A metal foil such as gold foil is formed on the outer periphery of the X-ray absorbing metal pattern that defines the exposure area. In this case, an adhesive layer may or may not be necessary. In addition, the method for manufacturing the X-ray mask of the present invention is to first form an X-ray transparent thin film on the main surface of a tile-shaped substrate (such as a silicon wafer) and a protective film on the other surface. Even if it is provided on the side surface, etc., it is just a device within the scope of the design.

X線透過性薄膜のSiN、BN、SiC,Beは例えば
化学気相蒸着、物理蒸着、スパッタリング等の薄膜形成
法などのPVD (物理的成膜法)、CVD (化学的
成膜法)等の各手法が用いうる。
X-ray transparent thin films such as SiN, BN, SiC, and Be can be produced using thin film formation methods such as chemical vapor deposition, physical vapor deposition, and sputtering, such as PVD (physical deposition method) and CVD (chemical deposition method). Each method can be used.

また、ポリイミドはコーティング、フィルム張り付は等
で形成される。
In addition, polyimide is formed by coating, film adhesion, etc.

又、保護膜のSiN、5int、SiCはX線透過性薄
膜と同様にして、X線透過性薄膜と同一工程か、或は別
工程で形成され、基板に窓を開ける部分に相当する部分
をドライエツチング等のパターンニング手段で除去する
。従って、同一材料の場合、同時に形成してもよい。そ
のとき形成する場所は、主面と他面、必要に応じて側面
に設ける事となる。
In addition, the SiN, 5int, and SiC protective films are formed in the same process as the X-ray transparent thin film or in a separate process, and the portion corresponding to the window opening in the substrate is formed in the same way as the X-ray transparent thin film. It is removed by patterning means such as dry etching. Therefore, if they are made of the same material, they may be formed at the same time. The areas to be formed at that time are the main surface, the other surface, and the side surfaces as necessary.

次にX線透過性薄膜上にX線吸収性金属パターンを形成
する。X線吸収性金属のAu、Ta、WPt、Mo、R
e、等は物理蒸着、スパフタリング、電気めっき等のP
VD (物理的成膜法)、CVD(化学的成膜法)等の
各手法で形成される。
Next, an X-ray absorbing metal pattern is formed on the X-ray transparent thin film. X-ray absorbing metals Au, Ta, WPt, Mo, R
e, etc. are physical vapor deposition, sputtering, electroplating, etc.
It is formed by various methods such as VD (physical deposition method) and CVD (chemical deposition method).

パターンニングは色々な方法が考えられるが、船釣には
予め上記金属層を形成した後パターン形状グするサブト
ラクティブ法か、パターン形状に金属層を析出するアデ
ィティブ法によって行われる。サブトラクティブ法は上
記金属層を形成した上にパターンレジストを形成し、ド
ライエツチング等でパターンを形成する。アディティブ
法はX、捺透過性薄膜上に導電性膜を形成した上にパタ
ーンレジストを形成し、めっき法で金属パターンを形成
し、しかる後、導電性膜の不用部分をドライエツチング
等で除去する。次に、所定の単位露光領域が開口した金
属箔を該基板主面上に形成する。
Various methods can be used for patterning, but for boat fishing, it is carried out either by a subtractive method in which the metal layer is formed in advance and then shaped into a pattern, or by an additive method in which a metal layer is deposited in a pattern shape. In the subtractive method, a pattern resist is formed on the metal layer, and a pattern is formed by dry etching or the like. In the additive method, a conductive film is formed on a transparent thin film, a pattern resist is formed on top, a metal pattern is formed by plating, and then unnecessary parts of the conductive film are removed by dry etching, etc. . Next, a metal foil having a predetermined unit exposure area opened is formed on the main surface of the substrate.

その製造方法はスクリーン印刷、グラビア印刷、蒸着や
スパッタ等のPVD (物理的成膜法)法等色々考えら
れる所ではあるが、基板主面への影響、欠陥、製造容易
性などを考慮すると、転写形成が最も適しているいる。
There are various possible manufacturing methods such as screen printing, gravure printing, PVD (physical film deposition) methods such as vapor deposition and sputtering, but considering the influence on the main surface of the substrate, defects, ease of manufacture, etc. Transfer formation is most suitable.

転写も色々あるが、パターン化しである金属箔転写シー
トを該基板主面上に重ね、基板主面の単位露光領域を規
定する外周面に転写形成するのが一般的である。尚、接
着剤は金属箔転写シートへの事前形成でも、マスクへの
事前形成でも、金属の接着力により省略でも良い。
Although there are various types of transfer, it is common to stack a patterned metal foil transfer sheet on the main surface of the substrate and transfer it to the outer peripheral surface defining a unit exposure area on the main surface of the substrate. Note that the adhesive may be pre-formed on the metal foil transfer sheet, pre-formed on the mask, or may be omitted depending on the adhesive strength of the metal.

また、パターン化は金属箔か接着剤の何れがであれは充
分で、接着阻害層によるパターン化でもよい。転写され
る金属箔は1〜10μmAu、Ta。
Further, patterning using either metal foil or adhesive is sufficient, and patterning using an adhesion inhibiting layer may be sufficient. The metal foil to be transferred is 1 to 10 μm Au, Ta.

W、PL、Mo、Re、等が一般的であるが、厚さ等は
この値に限る必要は無い。また、転写シートは剥離紙、
合成樹脂シート等の剥離性シートに上記金属箔を貼合わ
せるか、或は蒸着し、接着層を形成すると容易に得られ
る。以下、この場合を以て詳しく説明すると、単位露光
領域の金属箔不用部分は転写シートを打ち抜いて単位露
光領域を開口することが出来る。或は、打ち抜かなくと
も、予め不用部分をエッチング除去することも出来る。
W, PL, Mo, Re, etc. are commonly used, but the thickness etc. need not be limited to these values. In addition, the transfer sheet is a release paper,
It can be easily obtained by laminating or vapor depositing the metal foil on a releasable sheet such as a synthetic resin sheet to form an adhesive layer. Hereinafter, this case will be explained in detail.The portion of the unit exposure area where the metal foil is not used can be punched out of the transfer sheet to open the unit exposure area. Alternatively, unnecessary portions can be removed by etching in advance without punching.

次に、板状基板に所望の窓を形成する工程であるが、保
護膜を設けた面から所望の形状で板状基板をエツチング
除去して窓を形成する。
Next, in the step of forming a desired window on the plate-shaped substrate, the window is formed by etching the plate-shaped substrate in a desired shape from the surface provided with the protective film.

(作用) 本発明では単位露光領域を規定する単位露光領域外周面
に金属箔が形成されており、単位露光領域外に照射され
るX線をこの金属箔が充分吸収して、]3遇するX線量
を充分残少し、本発明のX線露光用マスクを使用して、
被露光基板上に単位領域ずつをステンプアンドリピート
方式で、繰り返し順送りにX線露光していく場合に数回
微量X線に暴露されても無視し得る量であり、従来のX
線マスクのように境界領域にかぶり等が発生する不都合
を回避し得る。
(Function) In the present invention, a metal foil is formed on the outer circumferential surface of the unit exposure area that defines the unit exposure area, and this metal foil sufficiently absorbs the X-rays irradiated outside the unit exposure area, resulting in three effects. Using the X-ray exposure mask of the present invention while leaving a sufficient amount of X-rays,
Even if you are exposed to a small amount of X-rays several times when exposing unit areas on the exposed substrate using the step-and-repeat method, the amount of X-ray exposure is negligible, compared to conventional X-rays.
It is possible to avoid the inconvenience of fogging or the like occurring in the boundary area as in the case of a line mask.

なお、その製造方法においては、特に転写で形成した場
合、基板主面へ物理的化学的影響を与える1嘆<、欠陥
を生じさせない効果が大きい。又、池の方決に較べて製
造も容易である。
In addition, in the manufacturing method, especially when it is formed by transfer, it is highly effective in preventing the occurrence of defects that would otherwise have physical or chemical effects on the main surface of the substrate. Also, it is easier to manufacture than the pond method.

(実施例1) 第1図に本発明によるX線露光用マスクの一つの製造実
施例を示す。
(Example 1) FIG. 1 shows an example of manufacturing an X-ray exposure mask according to the present invention.

まず、第1図a)に示すように板状基板をなす面方位(
110)のシリコンウェーハ1の両面に化学的気相薄着
法によりX線透過性薄膜であり、保:I膜でもある窒化
珪素膜2を2μmの17さに形成した後、反応性スパッ
タ法により、第1図b)に示すようにX線吸収性薄膜3
であるタングステン膜を1μmの厚さで、板状基板の片
面に形成する。
First, as shown in Figure 1a), the plane orientation (
A silicon nitride film 2, which is an X-ray transparent thin film and also a protective film, is formed on both sides of the silicon wafer 1 of 110) to a thickness of 2 μm by a chemical vapor deposition method, and then by a reactive sputtering method. As shown in Figure 1b), the X-ray absorbing thin film 3
A tungsten film having a thickness of 1 μm is formed on one side of a plate-shaped substrate.

次に第1図C)に示すように、板状基板下面の窒化珪素
膜2の一部をドライエツチングにより除去し、パックエ
ッチング用窓4を形成し、上面には電子ビーム露光でレ
ジストを形成し反応性イオンエッチングによってX線吸
収性薄膜3をパターンニングする。
Next, as shown in FIG. 1C), a part of the silicon nitride film 2 on the lower surface of the plate-shaped substrate is removed by dry etching to form a pack etching window 4, and a resist is formed on the upper surface by electron beam exposure. Then, the X-ray absorbing thin film 3 is patterned by reactive ion etching.

次に第1図d)に示すように、予め単位露光領域を規定
する形状に打ち抜いた、接着15と金′:n6と剥離紙
7が順に積層された転写シート8を所定の位置に重ね合
わせ、剥離紙を剥して、金箔層を単位露光領域の外周に
当たる所定領域に形成する。
Next, as shown in FIG. 1d), a transfer sheet 8, which has been punched out in advance into a shape that defines a unit exposure area and is laminated with adhesive 15, gold':n6, and release paper 7 in this order, is placed in a predetermined position. , the release paper is peeled off and a gold foil layer is formed on a predetermined area corresponding to the outer periphery of the unit exposure area.

次に第1図e)に示すように、バンクエッチング用窓4
から、アルカリ水?8液によりシリコンを除去し、開口
部9を形成して本発明によるX線露光用マスクを得る。
Next, as shown in FIG. 1e), the bank etching window 4 is etched.
So, alkaline water? Silicon is removed using liquid No. 8, and openings 9 are formed to obtain an X-ray exposure mask according to the present invention.

(実施例2) 第2図に本発明によるX線露光用マスクの別の製造実施
例を示す。
(Example 2) FIG. 2 shows another manufacturing example of an X-ray exposure mask according to the present invention.

まず、第2図a)に示すように板状基板である面方位(
110)のシリコンウェーハlの両面に化学的気相蒸着
法によりX線透過性薄膜であり、保護膜でもある窒化珪
素膜2を2μmの厚さに形成した後、RFスパッタ法に
より、第2図b)のようにX線吸収性薄膜3であるタン
グステン膜をltlmの厚さで、板状基板の片面に形成
する。
First, as shown in Figure 2a), the plane orientation (
After forming a silicon nitride film 2, which is an X-ray transparent thin film and also a protective film, to a thickness of 2 μm on both sides of the silicon wafer 1 shown in FIG. As shown in b), a tungsten film as the X-ray absorbing thin film 3 is formed to a thickness of ltlm on one side of the plate-shaped substrate.

次に第2図C)に示すように、基板下面の窒化珪素膜2
の少なくとも露光領域を含む一部をドライエツチングに
より除去し、バックエツチング用窓4を形成し、上面に
は電子ビーム露光でレジストを形成し反応性イオンエツ
チングによってX線吸収性薄膜3をパターンニングする
。X線吸収性薄膜3パターンは露光領域だけである。
Next, as shown in FIG. 2C), the silicon nitride film 2 on the bottom surface of the substrate is
At least a portion including the exposed area is removed by dry etching to form a back etching window 4, a resist is formed on the upper surface by electron beam exposure, and an X-ray absorbing thin film 3 is patterned by reactive ion etching. . The three patterns of the X-ray absorbing thin film are only in the exposed area.

次に第2図d)に示すように、バックエツチング用窓4
から、アルカリ水溶液によりシリコンを除去し、開口部
9を形成する。
Next, as shown in Figure 2 d), the back etching window 4 is
Then, silicon is removed using an alkaline aqueous solution to form an opening 9.

しかる後、第2図e)に示すように、予め単位露光領域
を規定する形状に打ち抜いた、接着層5と金箔6と剥離
紙7が順に積層された転写シート8を所定の位置に重ね
合わせ、剥離紙7を剥して、金箔6を所定領域に形成す
る。
Thereafter, as shown in FIG. 2e), a transfer sheet 8, which has been punched out in advance into a shape that defines a unit exposure area and has an adhesive layer 5, gold foil 6, and release paper 7 laminated in this order, is superimposed at a predetermined position. , peel off the release paper 7 and form the gold foil 6 on a predetermined area.

(発明の効果) 本発明によるX線露光用マスクは単位露光領域外の外周
部に充分な厚みの転写金属層が形成されているために、
単位露光領域を密につめて形成していくことができ、又
、本発明の製造方法によれば、金属箔を転写すると言う
極めて簡易な方法で従来の微細パターン形成工程に手を
加えることなく、X線遮光枠を形成することができる。
(Effects of the Invention) Since the X-ray exposure mask according to the present invention has a sufficiently thick transfer metal layer formed on the outer periphery outside the unit exposure area,
The manufacturing method of the present invention allows unit exposure areas to be densely packed and formed, and the manufacturing method of the present invention uses an extremely simple method of transferring metal foil without modifying the conventional fine pattern forming process. , an X-ray shielding frame can be formed.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図a)乃至e)は、本発明の一実施例を示す工程を
順に示した断面図、第2図a)乃至e)は、本発明の別
な実施例の工程を順に示した断面図である。 にウェーハ 2:窒化珪素膜 X線吸収性薄膜 、窓 :接着層 ;金箔 :剥離紙 :転写シート ;接着層
Figures 1 a) to e) are cross-sectional views sequentially showing the steps of one embodiment of the present invention, and Figures 2 a) to e) are cross-sectional views sequentially showing the steps of another embodiment of the present invention. It is a diagram. Wafer 2: silicon nitride film X-ray absorbing thin film, window: adhesive layer; gold foil: release paper: transfer sheet; adhesive layer

Claims (1)

【特許請求の範囲】 1)X線を吸収する重金属パターンとその重金属パター
ンを支持するX線の吸収の少ない軽元素の膜とその膜の
外周を固定する枠からなるX線マスクに於て、単位露光
領域の外周に接着層を介し若しくは介さず金属箔層が形
成された事を特徴とするX線マスク。 2)板状基板の主面上にX線透過性薄膜を積層し他面上
には支持枠下面に相当する部分に保護膜を形成する工程
と、該X線透過性薄膜上にX線吸収性金属パターンを形
成する工程と、板状基板の所望領域を主面の反対側から
エッチング除去して窓を形成する工程と、単位露光領域
の外周に転写で金属箔層若しくは接着層と金属箔層を形
成する工程とからなるX線露光用マスクの製造方法。 3)板状基板の主面上と他面上の支持枠下面に相当する
部分にX線透過性薄膜兼保護膜を形成する工程と、該X
線透過性薄膜兼保護膜の主面上にX線吸収性金属パター
ンを形成する工程と、板状基板の所望領域を主面の反対
側からエッチング除去して窓を形成する工程と、単位露
光領域の外周に転写で金属箔層若しくは接着層と金属箔
層を形成する工程とからなるX線露光用マスクの製造方
法。
[Claims] 1) An X-ray mask consisting of a heavy metal pattern that absorbs X-rays, a film of a light element that absorbs little X-rays that supports the heavy metal pattern, and a frame that fixes the outer periphery of the film, An X-ray mask characterized in that a metal foil layer is formed on the outer periphery of a unit exposure area with or without an adhesive layer. 2) A step of laminating an X-ray transparent thin film on the main surface of the plate-shaped substrate and forming a protective film on the other surface in a portion corresponding to the lower surface of the support frame, and a step of laminating an X-ray absorbing thin film on the X-ray transparent thin film. a process of forming a transparent metal pattern, a process of etching away a desired area of the plate-shaped substrate from the opposite side of the main surface to form a window, and a process of forming a metal foil layer or an adhesive layer and a metal foil by transfer on the outer periphery of the unit exposure area. A method for manufacturing an X-ray exposure mask, which comprises a step of forming a layer. 3) A step of forming an X-ray transparent thin film and protective film on the main surface and the other surface of the plate-shaped substrate at portions corresponding to the lower surface of the support frame, and
A step of forming an X-ray absorbing metal pattern on the main surface of the radiation-transparent thin film/protective film, a step of etching away a desired area of the plate-shaped substrate from the opposite side of the main surface to form a window, and a unit exposure step. A method for manufacturing an X-ray exposure mask comprising the steps of forming a metal foil layer or an adhesive layer and a metal foil layer on the outer periphery of a region by transfer.
JP63164236A 1988-07-01 1988-07-01 Mask for x-ray exposure use and its manufacture Pending JPH0214511A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63164236A JPH0214511A (en) 1988-07-01 1988-07-01 Mask for x-ray exposure use and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63164236A JPH0214511A (en) 1988-07-01 1988-07-01 Mask for x-ray exposure use and its manufacture

Publications (1)

Publication Number Publication Date
JPH0214511A true JPH0214511A (en) 1990-01-18

Family

ID=15789258

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63164236A Pending JPH0214511A (en) 1988-07-01 1988-07-01 Mask for x-ray exposure use and its manufacture

Country Status (1)

Country Link
JP (1) JPH0214511A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009212220A (en) * 2008-03-03 2009-09-17 Toshiba Corp Reflection-type mask and method of making the same
JP2012209404A (en) * 2011-03-29 2012-10-25 Toppan Printing Co Ltd Reflective mask

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009212220A (en) * 2008-03-03 2009-09-17 Toshiba Corp Reflection-type mask and method of making the same
JP4602430B2 (en) * 2008-03-03 2010-12-22 株式会社東芝 Reflective mask and manufacturing method thereof
US7932002B2 (en) 2008-03-03 2011-04-26 Kabushiki Kaisha Toshiba Reflection-type mask and method of making the reflection-type mask
JP2012209404A (en) * 2011-03-29 2012-10-25 Toppan Printing Co Ltd Reflective mask

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