JPH02143996A - Electrically erasable prom - Google Patents

Abstract

PURPOSE:To stably obtain an electrically erasable PROM without using a thin tunnel oxide film by mounting an EPROM with floating gate structure and a light emitting means on the same package. CONSTITUTION:The EPROM with floating structure and the light emitting means capable of generating energy sufficient to dissipate an electrical charge accumulated in a floating gate are mounted in the same package. As the light emitting means 101, for example, a diode of ultraviolet light emission is used, and as the EPROM 102, an ultraviolet ray erasable EPROM is used. Write can be performed in the same method as a conventional method at the time of performing the write by mounting both chips in the same package 103. At the time of performing erasure, it is performed by emitting an ultraviolet ray light emitting diode 101 without performing the irradiation of an external ultraviolet ray. In such a way, the PROM electrically erasable completely from the outside the package can be obtained.

Description

Detailed Description of the Invention [Field of Industrial Application] The present invention relates to writing and erasing of non-volatile memory elements. [Conventional technology] Conventionally, so-called K
There was KFROM. This is a thin tunnel oxide film (1
00^), the charges in the floating gate are injected and dissipated.

[Problem to be solved by the invention] In the conventional technology, it is necessary to create a thin tunnel oxide film, and in order to stably generate the tunnel oxide film, it takes a lot of time to manage, adjust, monitor, etc. and man-hours are required. Furthermore, it is expected that the manufacturing yield will not improve easily.

The present invention solves the above problems, and its purpose is to
The object of the present invention is to stably provide an electrically erasable FROM without using a thin tunnel oxide film.

[Means for Solving the Problems] In the present invention, a floating film KFROM and a light emitting means capable of generating light energy sufficient to eliminate the charge accumulated in the 70-digit gate are packaged in the same package. [Function] Implemented in [Operation] By the above means, EP and ROM can be electrically erased by light emitting means without requiring a tunnel oxide film.

[Example] FIG. 1 shows an embodiment of the present invention.

For example, an ultraviolet light diode is used as the light emitter r9101. E: FROM102 is the conventional ultraviolet erasing type 1! : Use FROM. Both chips are mounted in the same package 103. By doing this, writing can be performed in exactly the same manner as conventional methods, and during erasing, instead of irradiating external ultraviolet rays, the ultraviolet light emitting diode 10
1 to emit light and erase it. In this way, it becomes a FROM that is completely electrically erasable from outside the package.

[Effects of the Invention] In the present invention, the light emitting means can be built-in without using a thin tunnel oxide film, and the light can be erased electrically from the outside, so manufacturing difficulties can be greatly reduced. . Further, a yield of about 118FROM of the ultraviolet erase type can be secured.

Furthermore, ultraviolet + VJ? Compared to lff-type EPROMs, it has the advantage of: ■Anxiety about external ultraviolet irradiation means; ■It is possible to electrically erase and write data while still being incorporated into the device, and has a wide range of applications.

[Brief explanation of the drawing]

FIGS. 1(4) and 1(b) are diagrams showing an embodiment of the present invention. 101... Ultraviolet light emitting diode 102...
...Ultraviolet erase type EPROM103...
Package +02 or more

Claims (1)

[Claims] An electrically erasable PROM characterized in that an EPROM with a floating gate structure and a light emitting means capable of generating enough light energy to eliminate the charge accumulated in the floating gate are mounted in the same package. .