JPH02125483A - Selectively growing method for semiconductor - Google Patents

Abstract

PURPOSE:To prevent an insulating film from cracking or peeling by selectively removing a crystalline layer and a thin film, forming the insulating film, and selectively crystal-growing a second crystalline layer for an electronic integrated circuit in a removed part. CONSTITUTION:A second crystalline layer 5 formed with an electronic integrated circuit such as FET, etc., is selectively epitaxially grown on a semiconductor substrate 1 in which a first crystalline layer 2 and a thin film 3 are removed by an organic metal vapor epitaxial method. After the growing, the integrated circuit is formed on the layer 5. In this case, since the layer 2 and the film 3 are masked with an insulating film 4, the layer 5 for the integrated circuit is not formed thereon. Since the film 3 made of InP and the film 4 made of SiN has satisfactory adhesive properties, the film 4 is not cracked, or peeled, and there is no growth of the crystal of the layer 5 erroneously on the layer 2.

Description

[Detailed description of the invention]

[Industrial Application Field] The present invention relates to a semiconductor selective growth method, and more particularly to a growth method for selectively growing a crystal layer in which an optical integrated circuit is formed and a crystal layer in which an electronic integrated circuit is formed. [Prior Art] Conventionally, as a general selective growth method of this type of optoelectronic integrated circuit, there is, for example, the one shown in "Applied Electronic Materials Subcommittee Research Report No. 423J" published by the Japan Society of Applied Physics. In optoelectronic integrated circuits, the crystal layer for optoelectronic integrated circuits in which light-emitting or light-receiving elements are formed is generally different from the crystal layer for electronic integrated circuits such as field-effect transistors (FETs). Therefore, in the simplest selective growth method, the first crystal layer on which the electronic integrated circuit is formed and the optical integrated circuit are separated on the semi-insulating semiconductor substrate through a selective thin etch stop layer during etching. There is a method in which the second crystal layer to be formed is epitaxially grown continuously.The region of the first crystal layer where the electronic integrated circuit is to be formed needs to be exposed. The electronic integrated circuit layer is exposed by selectively removing the second crystal layer and the etch stop layer itself located on the formation region by chemical etching, etc. However, in this chemical etching, When etching is attempted, even if an etch stop layer with a sufficiently large selection ratio is formed, the formed layer will vary by several hundred or more.For this reason, 1. 1 μm for the electronic integrated circuit layer. If the above etching is performed to form an FET that uses two-dimensional electron gas flowing through the hetero interface, the characteristics of this FET will become unstable.The following methods can be used to resolve this problem. In other words, after epitaxially growing a first crystal layer on which an optical integrated circuit is formed on a semi-insulating semiconductor substrate, unnecessary portions of this first crystal layer are removed by chemical etching, etc. The remaining first crystal layer is covered with an insulating film. Then, after covering with this insulating film, a second crystal layer on which an electronic integrated circuit will be formed is selectively epitaxially grown on the removed portion. In this selective growth method, A crystal layer for electronic integrated circuits having a uniform thickness can be obtained. [Problem to be solved by the invention] However, in this conventional selective growth method, for example, the layer (2) under the insulating film made of SiN (silicon nitride) For example, the crystal layer for optical integrated circuits formed in
(Gallium, Indium, Arsenic), the adhesion between the insulating film and the crystal layer is poor, resulting in cracks and peeling of the insulating film. For this reason, in the conventional selective growth method, in the epitaxial growth process of the crystal layer for electronic integrated circuits, which is the subsequent manufacturing process, the crystal layer for optical integrated circuits is grown through cracks or peeling of the insulating film. However, the problem was that the crystals used for this purpose were grown. [Means for Solving the Problems] The present invention has been made to solve the above problems. , these crystal layers and thin films are selectively removed, the above-mentioned insulating film is formed on the crystal layers and thin films that remain after removal, and a second crystal layer for an electronic integrated circuit is selectively grown in the removed portion. It was designed so that [Function] The insulating film adheres closely to the thin film and is difficult to peel off. [Example] Next, the present invention will be described in detail below with reference to the drawings. Figures (a) to (d) show one embodiment of the present invention. 1 is a cross-sectional view showing an example manufacturing process. As shown in FIG.
Organi Metallic Vapor Pha
A first crystal layer 2 on which an optical integrated circuit such as a light emitting or light receiving element is formed is formed by a thin film 3 made of InP on this first crystal layer 2.
is formed. As shown in FIG. 2B, a portion of the first crystal layer 2 and the thin film 3 formed on the first crystal layer 2 corresponds to a region where an electronic integrated circuit, which will be described later, is formed. It is selectively removed by chemical etching or the like. As shown in FIG. 2C, an insulating film 4 made of SiN is deposited and coated on the first crystal layer 2 and thin film 3 remaining after the removal, and the electronic integrated circuit which is the subsequent manufacturing process is formed. It is used as a mask during the growth of crystalline layers. As shown in FIG. 3(d), an electronic integrated circuit such as an FET is formed on the semiconductor substrate 1 from which the first crystal layer 2 and the thin film 3 have been removed by the organometallic vapor phase epitaxial method. crystal layer 5 is selectively epitaxially grown. After this growth, an electronic integrated circuit such as an FET is formed on the crystal layer 5. Note that at this time, since the first crystal layer 2 and thin film 3 for the optical integrated circuit are masked by the insulating film 4 as described above, the crystal layer 5 for the electronic integrated circuit is not formed on them. . In addition, the thin film 3 made of InP and SiN, Q
Since it has good adhesion to the insulating film 4 made of There is no possibility that the crystal of the crystal layer 5 will be grown. As shown in FIG. 6(e), after the electronic integrated circuit is formed on the second crystal layer 5, the insulating film 4 and the thin film 3 are removed by chemical etching or the like, and the first crystal for the optical integrated circuit is formed. layer 2
is exposed. Then, an optical integrated circuit such as a light emitting or light receiving element is formed on this first crystal layer 2, and the series of manufacturing processes for the optoelectronic integrated circuit is completed. Note that in the above embodiment, the thin film 3 is made of InP,
Although the insulating film 4 has been described as being made of SiN, it is not limited thereto, and each composition of the thin film 3 and the insulating film 4 may be made of components that have good adhesion to each other. It has the same effect. [Effects of the Invention] As explained above, the present invention forms a thin film with good adhesion to an insulating film on a first crystal layer for an optical integrated circuit, and then selectively removes the crystal layer and thin film. The insulating film is formed on the crystal layer and thin film remaining after removal, and the second crystal layer for an electronic integrated circuit is selectively grown in the removed portion, so that the insulating film becomes a thin film. It sticks tightly and becomes difficult to peel off. For this reason, cracks and peeling of the insulating film, which occur when an insulating film is formed on a crystal layer for optical integrated circuits made of GaInAs, do not occur as in the past. This has the effect of solving the problem that the crystal of the crystal layer for electronic integrated circuits is grown on the crystal layer.

[Brief explanation of the drawing]

Figures (a) to (e) are cross-sectional views showing a manufacturing process according to an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Semi-insulating semiconductor substrate, 2... First crystal layer on which an optical integrated circuit is formed, 3... Thin film made of InP,
4... An insulating film made of SiN, 5... A second crystal layer on which an electronic integrated circuit is formed. Patent Applicant: Yoshiki Hase, Patent Attorney, Sumitomo Electric Industries, Ltd. Procedural Amendment (Released) Patent Application No. 278473, 1988 Semiconductor selective growth method, Agent, Sumitomo Electric Industries, Ltd. (Postal code 101) Chiyoda-ku, Tokyo 4th floor 5, Foresight Building, 3-5-2 Iwamotocho Date of amendment order: February 13, 1999 (Delivery date: March 7, 1999) "Detailed description of the invention" in the specification subject to amendment Each column and drawing

[Brief explanation of the drawing]

7 Contents of amendment (1) “Figures (a) to (d)” on page 5, line 6 of the specification
"is" is corrected to "Figure 1 is". (2) “Figures (a) to (e)” on page 8, line 11 of the specification
) is corrected to ``Figure 1 is''. (3) Amend the drawing as shown in the attached sheet. that's all

Claims (1)

[Claims] After crystal-growing a first layer on which an optical integrated circuit is formed on a semiconductor substrate and forming a thin film with good adhesion to an insulating film on this first layer, these first layers and thin films are selected. a semiconductor selective growth method, the insulating film is formed on the first layer and the thin film remaining after the removal, and the second layer in which an electronic integrated circuit is formed in the removed portion is selectively grown as a crystal.