JPH02122621A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH02122621A JPH02122621A JP27675288A JP27675288A JPH02122621A JP H02122621 A JPH02122621 A JP H02122621A JP 27675288 A JP27675288 A JP 27675288A JP 27675288 A JP27675288 A JP 27675288A JP H02122621 A JPH02122621 A JP H02122621A
- Authority
- JP
- Japan
- Prior art keywords
- ohmic contact
- semiconductor
- semiconductor substrate
- substrate
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 52
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 229910052751 metal Inorganic materials 0.000 claims abstract description 35
- 239000002184 metal Substances 0.000 claims abstract description 35
- 230000006698 induction Effects 0.000 claims abstract description 20
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 8
- 239000000956 alloy Substances 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 7
- 150000002739 metals Chemical class 0.000 claims description 9
- 239000010453 quartz Substances 0.000 abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 8
- 230000006866 deterioration Effects 0.000 abstract description 4
- 238000010438 heat treatment Methods 0.000 description 19
- 239000010931 gold Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 235000015067 sauces Nutrition 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要］
半導体装置の製造方法に係り、特にオーミック接触の形
成方法に関し。DETAILED DESCRIPTION OF THE INVENTION [Summary] The present invention relates to a method of manufacturing a semiconductor device, and particularly to a method of forming an ohmic contact.
多数の半導体基板を均一に加熱し、しかもオーミック接
触を形成する部分のみを選択的に昇温する方法を目的と
し。The purpose of this method is to uniformly heat a large number of semiconductor substrates, and selectively raise the temperature of only the parts that form ohmic contact.
半導体基板のオーミック接触形成部に金属を被着し、該
半導体基板の主面に垂直に交番磁界を印加することによ
り該金属を選択的に誘導加熱し該半導体基板と反応させ
合金層を形成して、該金属２乃至６と該半導体基板ｌと
をオーミック接触させる工程を有する半導体装置の製造
方法により構成する。A metal is deposited on the ohmic contact forming portion of the semiconductor substrate, and an alternating magnetic field is applied perpendicularly to the main surface of the semiconductor substrate to selectively heat the metal by induction and react with the semiconductor substrate to form an alloy layer. The semiconductor device is manufactured by a method of manufacturing a semiconductor device including a step of bringing the metals 2 to 6 into ohmic contact with the semiconductor substrate l.
本発明は半導体装置の製造方法に係り、特にオーミック
接触の形成方法に関する。The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of forming an ohmic contact.
半導体基板にオーミック接触を形成するには。To form an ohmic contact to a semiconductor substrate.
通常、その部分に金属を被着して加熱し半導体基板と合
金化する。この時この加熱が半導体基板のオーミック接
触部以外の素子領域に悪影響を及ぼさないことが望まれ
る。Usually, metal is deposited on that part and heated to form an alloy with the semiconductor substrate. At this time, it is desired that this heating does not adversely affect the element regions other than the ohmic contact portions of the semiconductor substrate.
さらに、半導体基板間及び基板内でオーミック接触特性
にばらつきのないことが望まれる。Furthermore, it is desired that there be no variation in ohmic contact characteristics between and within semiconductor substrates.
Ｃ従来の技術〕
従来、半導体基板のオーミック接触は金属を被着した半
導体基板を電気炉中で例えば化合物半導体の場合は４０
０乃至５００°Ｃ程度に加熱して、その金属と半導体を
合金化することにより実現されていた。ところが、この
加熱法は外部からの加熱であるため、大面積の多数の半
導体基板を同時に加熱する時は温度勾配が生じ易く、半
導体基板間。C. Prior art] Conventionally, ohmic contact of a semiconductor substrate is made by placing a metal-coated semiconductor substrate in an electric furnace, for example, in the case of a compound semiconductor, at a temperature of 40
This was achieved by heating the metal to about 500°C to alloy the metal and semiconductor. However, since this heating method uses external heating, when a large number of large-area semiconductor substrates are heated at the same time, temperature gradients tend to occur between the semiconductor substrates.
さらには半導体基板内でオーミック接触特性にばらつき
が生じていた。Furthermore, variations in ohmic contact characteristics occurred within the semiconductor substrate.
さらに、加熱によりオーミック接触部以外の素子領域で
も変化が生じて半導体の緒特性が劣化するといった問題
があった。Furthermore, there is a problem in that heating causes changes in device regions other than the ohmic contact portions, resulting in deterioration of semiconductor characteristics.
本発明は、多数の半導体基板を均一に加熱して特性にば
らつきのないオーミック接触を形成し。The present invention uniformly heats a large number of semiconductor substrates to form ohmic contacts with uniform characteristics.
しかもオーミック接触を形成する部分のみを選択的に昇
温加熱して他の素子領域には影響を及ぼさない加熱方法
を提供することを目的とする。Moreover, it is an object of the present invention to provide a heating method that selectively heats only the portion where ohmic contact is to be formed, without affecting other device regions.
第１図はオーミック接触形成用加熱装置、第２図及び第
３図は実施例Ｉ及び■である。これらの図及び図中の符
号を参照しながら上記課題を解決するための手段につい
て説明する。FIG. 1 shows a heating device for forming ohmic contact, and FIGS. 2 and 3 show Examples I and 2. Means for solving the above problem will be explained with reference to these figures and the reference numerals in the figures.
上記課題は、半導体基ＦｉＩのオーミック接触形成部に
金属２乃至６を被着し、該半導体基板ｌの主面に垂直に
交番磁界を印加することにより該金属２乃至６を選択的
に誘導加熱し該半導体基板ｌと反応させ合金層を形成し
て、該金属２乃至６と該半導体基板ｌとをオーミック接
触させる工程を有する半導体装置の製造方法によって解
決される。The above problem is achieved by depositing the metals 2 to 6 on the ohmic contact forming portion of the semiconductor substrate FiI, and selectively induction heating the metals 2 to 6 by applying an alternating magnetic field perpendicular to the main surface of the semiconductor substrate l. This problem is solved by a method of manufacturing a semiconductor device, which includes a step of reacting with the semiconductor substrate 1 to form an alloy layer to bring the metals 2 to 6 into ohmic contact with the semiconductor substrate 1.
本発明では高周波誘導加熱によりオーミック接触形成部
の金属を選択的に加熱するようにしている。In the present invention, the metal of the ohmic contact forming portion is selectively heated by high-frequency induction heating.
第４図に高周波誘導加熱の原理を示す。導体板に板面垂
直方向の交番磁界が印加されると、板面内にその磁界を
打ち消す方向のうず電流が流れる。Figure 4 shows the principle of high-frequency induction heating. When an alternating magnetic field is applied to a conductor plate in a direction perpendicular to the plate surface, eddy currents flow within the plate plane in a direction that cancels out the magnetic field.
このうず電流により導体板は加熱される。The conductor plate is heated by this eddy current.
第５図に高周波誘導加熱炉炉心部の概念図を示す。炉心
管となる石英管８１の周囲に誘導コイル８３が巻かれ、
そのコイルに高周波電力が供給される。炉心では誘導コ
イルの軸方向に交番磁界が発生し、炉心の置かれた導体
は加熱される。FIG. 5 shows a conceptual diagram of the core of a high-frequency induction heating furnace. An induction coil 83 is wound around a quartz tube 81 serving as a furnace core tube.
High frequency power is supplied to the coil. In the reactor core, an alternating magnetic field is generated in the axial direction of the induction coil, and the conductors placed in the reactor core are heated.
第１図は高周波誘導加熱によるオーミック接触形成用加
熱装置を示す。石英治具８２に複数の半導体基板ｌをセ
ットし、基板の主面が誘導コイル８３の軸方向と平行に
なるようにする。誘導コイル８３に高周波電力が供給さ
れると、コイルの軸方向に交番磁界が発生し、基板の主
面に平行な面内でうず電流が発生する。それゆえ、基板
に被着された金属には極めて効果的にうず電流が発生す
る。FIG. 1 shows a heating device for forming an ohmic contact using high-frequency induction heating. A plurality of semiconductor substrates l are set on a quartz jig 82 so that the main surfaces of the substrates are parallel to the axial direction of the induction coil 83. When high frequency power is supplied to the induction coil 83, an alternating magnetic field is generated in the axial direction of the coil, and an eddy current is generated in a plane parallel to the main surface of the substrate. Therefore, eddy currents are generated very effectively in the metal deposited on the substrate.
ところで、うず電流の大きさは電気抵抗の大きさに逆比
例する。金属の表面抵抗は１０−０７口のオーダである
のに対し、オーミック接触形成部の半導体はｎ型あるい
はｐ型の高濃度ドーピングであってもたかだか１Ｏ−３
Ω／口のオーダ、他の部分は通常１０”０７口以上であ
る。それゆえ。By the way, the magnitude of eddy current is inversely proportional to the magnitude of electrical resistance. The surface resistance of metal is on the order of 10-07, whereas the semiconductor in the ohmic contact formation part has a resistance of at most 10-3 even if heavily doped with n-type or p-type.
On the order of Ω/mouth, other parts are usually 10"07 mouths or more. Therefore.
半導体基板１のオーミック接触形成部に被着した金属の
中では他の部分に比較して圧倒的に大きいうず電流が発
生する。An overwhelmingly large eddy current is generated in the metal deposited on the ohmic contact forming portion of the semiconductor substrate 1 compared to other parts.
その結果、オーミック接触形成部に被着した金属のみが
選択的に加熱され、その部分に半導体との合金層が形成
されオーミック接触が得られる。As a result, only the metal deposited on the ohmic contact forming portion is selectively heated, and an alloy layer with the semiconductor is formed in that portion, thereby obtaining ohmic contact.
しかも、他の素子領域は劣化するほど加熱されない。Moreover, other element regions are not heated to the extent that they deteriorate.
誘導コイルの径と巻き数は誘導加熱する複数の半導体基
板１に−様な磁界がかかるように選択することにより、
複数の半導体基板Ｉのオーミック接触形成部に被着した
金属を、同時にしかも均一に加熱することができる。そ
の結果、基板間さらには基板内で特性ばらつきのないオ
ーミック接触を得ることができる。By selecting the diameter and number of turns of the induction coil so that a -like magnetic field is applied to the plurality of semiconductor substrates 1 to be heated by induction,
The metal deposited on the ohmic contact forming portions of the plurality of semiconductor substrates I can be heated simultaneously and uniformly. As a result, it is possible to obtain ohmic contact without variation in characteristics between the substrates or even within the substrate.
以下本発明の実施例について説明する。 Examples of the present invention will be described below.
第２図は実施例Ｉで、ＢＴ（バイポーラトランジスタ）
、ＨＢＴ（ヘテロジャンクション・バイポーラトランジ
スタ）、ＨＥＴ（ホットエレクトロントランジスタ）な
どのバイポーラ型トランジスタにおける実施例である。Figure 2 shows Example I, which is a BT (bipolar transistor)
, HBT (heterojunction bipolar transistor), HET (hot electron transistor), and other bipolar transistors.
半導体基板ｌ上にコレクタ２２．ベース３２゜エミッタ
４２がこの順に形成され、コレクタ２２上に金属２．ベ
ース３２上に金属３．エミッタ４２上に金属４が被着さ
れている。金属２乃至４は金（Ａｕ）を主体とするもの
で厚さは３０００人程度７ある。A collector 22. is formed on the semiconductor substrate l. A base 32° emitter 42 is formed in this order, and a metal 2. metal 3. on the base 32; A metal 4 is deposited on the emitter 42. Metals 2 to 4 are mainly made of gold (Au) and have a thickness of about 3000 mm.
このような半導体基板を第１図に示すように石英治具８
２に納めて石英管８１内に配置する。不活性ガスを導入
して石英管８１内を清浄化した後。Such a semiconductor substrate is placed in a quartz jig 8 as shown in FIG.
2 and placed inside the quartz tube 81. After the inside of the quartz tube 81 is cleaned by introducing an inert gas.
不活性ガス中あるいは減圧水素中で誘導コイル８３に高
周波電力を加える。High frequency power is applied to the induction coil 83 in inert gas or reduced pressure hydrogen.
金属２乃至４に大きなうず電流が流れ、それに接するコ
レクタ２２．ベース３２．エミッタ４２にも若干のうず
電流が流れ、短時間のうちに昇温して金属２乃至４はそ
れに接する半導体と反応して合金層を形成し、オーミッ
ク接触２１，３１゜４１が得られる。A large eddy current flows through the metals 2 to 4, and the collector 22. Base 32. A slight eddy current also flows through the emitter 42, and the temperature rises in a short period of time, causing the metals 2 to 4 to react with the semiconductor in contact with them to form an alloy layer, resulting in ohmic contact 21, 31.degree. 41.
第３図は実施例■で、ＭＥＳＦＥＴ、ＨＥＭＴなどの電
界効果トランジスタにおける実施例であり、ＨＥＭＴを
例として説明する。FIG. 3 shows Example 2, which is an example of field effect transistors such as MESFET and HEMT, and will be explained using HEMT as an example.
電子供給層１１の形成された半導体基板ｌにソース５２
．ドレイン６２が形成され、ソース５２上に金属５．ド
レイン６２上に金属６が被着される。金属５．６は金（
Ａｕ）を主体とするもので厚さは３０００人程度７ある
。A source 52 is provided on the semiconductor substrate l on which the electron supply layer 11 is formed.
．． A drain 62 is formed and a metal 5. Metal 6 is deposited on drain 62 . Metal 5.6 is gold (
It is mainly made of Au) and has a thickness of about 3,000 mm.
実施例１と同様にしてこの半導体基板を誘導加熱するこ
とにより、ソース５２にオーミック接触５１、ドレイン
６２にオーミック接触６１が形成される。By induction heating this semiconductor substrate in the same manner as in Example 1, an ohmic contact 51 is formed at the source 52 and an ohmic contact 61 is formed at the drain 62.
ゲート７はショットキー電極で、タングステンシリサイ
ド等の高融点金属を使用する。あるいはソース５２及び
ドレイン６２のオーミック接触５１及び６１を形成して
後１例えばアルミニウム（ＡＩ）を被着して形成する。The gate 7 is a Schottky electrode made of high melting point metal such as tungsten silicide. Alternatively, after forming the ohmic contacts 51 and 61 of the source 52 and drain 62, for example, aluminum (AI) is deposited.
以上説明した様に２本発明によれば、半導体基板ｌのオ
ーミック接触形成部に被着した金属を選択的に誘導加熱
することにより、短時間でオーミック接触を形成し、し
かも他の素子領域には全く特性劣化を引き起こさないよ
うにすることができる。As explained above, according to the present invention, ohmic contact can be formed in a short time by selectively inductively heating the metal deposited on the ohmic contact forming part of the semiconductor substrate l, and moreover, it can be applied to other element regions. can be prevented from causing any characteristic deterioration.
さらに、複数の半導体基板を同時にしかも均一に加熱す
ることにより、基板間さらには基板内で特性ばらつきの
ないオーミック接触を形成することができる。Furthermore, by heating a plurality of semiconductor substrates simultaneously and uniformly, it is possible to form ohmic contact between the substrates and even within the substrates without variations in characteristics.
本発明は熱に弱い化合物半導体にオーミック電極を形成
する場合に特に大きな効果を奏する。The present invention is particularly effective when forming ohmic electrodes on heat-sensitive compound semiconductors.
第１図はオーミック接触形成用加熱装置。
第２図は及び第３図は実施例■及び実施例■。
第４図は高周波誘導加熱の原理。
第５図は高周波誘導加熱炉炉心部の概念図。
である０図において。
ｌは半導体基板。
１１は電子供給層。
２乃至６は金属。
２１．３１，４１゜
５１゜
■はオーミック接
触
２２はコレクタ。
３２はベース。
４２はエミッタ。
５２はソース。
６２はドレイン。
７はゲート
８１は石英管。
８２は石英治具。
８３は誘導コイル
。。。。。 。。。。。ｄ−−８３，ｔｔ＊コイルオー
ミ、７７１！＾−形量、出β０整１ｉＩ第 １ 図
実施例Ｉ
第 ２ ロ
９ミ絶イク一」■
久を戊界
山ｎ）成語４ｒｒａりへの脚、１里
第４ 図Figure 1 shows a heating device for forming ohmic contacts. Figures 2 and 3 show Example 2 and Example 2. Figure 4 shows the principle of high frequency induction heating. Figure 5 is a conceptual diagram of the core of a high-frequency induction heating furnace. In figure 0, which is l is a semiconductor substrate. 11 is an electron supply layer. 2 to 6 are metal. 21.31,41゜51゜■ is ohmic contact 22 is collector. 32 is the base. 42 is the emitter. 52 is the sauce. 62 is the drain. 7, gate 81 is a quartz tube. 82 is a quartz jig. 83 is an induction coil. . . . . . . . . . d--83,tt*coil ohmi, 771! ^-Shape quantity, output β0 adjustment 1iI Fig. 1 Example I Fig. 2 9 Mi absolute orgasm”■ Long time at Bokaizan
Claims (1)
乃至６）を被着し、該半導体基板（１）の主面に垂直に
交番磁界を印加することにより該金属（２乃至６）を選
択的に誘導加熱し該半導体基板（１）と反応させ合金層
を形成して、該金属（２乃至６）と該半導体基板（１）
とをオーミック接触させる工程を有することを特徴とす
る半導体装置の製造方法。A metal (2) is placed on the ohmic contact forming part of the semiconductor substrate (1)
By applying an alternating magnetic field perpendicular to the main surface of the semiconductor substrate (1), the metals (2 to 6) are selectively induction heated and reacted with the semiconductor substrate (1). Forming an alloy layer, the metals (2 to 6) and the semiconductor substrate (1)
1. A method for manufacturing a semiconductor device, comprising the step of bringing the two into ohmic contact.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27675288A JPH02122621A (en) | 1988-11-01 | 1988-11-01 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27675288A JPH02122621A (en) | 1988-11-01 | 1988-11-01 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02122621A true JPH02122621A (en) | 1990-05-10 |
Family
ID=17573849
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27675288A Pending JPH02122621A (en) | 1988-11-01 | 1988-11-01 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02122621A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001014610A3 (en) * | 1999-08-25 | 2001-05-10 | Nanogate Gmbh | Method for modifying coating materials |
| US8707896B2 (en) | 2009-03-27 | 2014-04-29 | Koninklijke Philips N.V. | Apparatus and method for manufacturing an integrated circuit |
-
1988
- 1988-11-01 JP JP27675288A patent/JPH02122621A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001014610A3 (en) * | 1999-08-25 | 2001-05-10 | Nanogate Gmbh | Method for modifying coating materials |
| US8707896B2 (en) | 2009-03-27 | 2014-04-29 | Koninklijke Philips N.V. | Apparatus and method for manufacturing an integrated circuit |
| US9305821B2 (en) | 2009-03-27 | 2016-04-05 | Koninklijke Philips N.V. | Apparatus and method for manufacturing an integrated circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6242719B1 (en) | Multiple-layered ceramic heater | |
| US2842831A (en) | Manufacture of semiconductor devices | |
| US3484313A (en) | Method of manufacturing semiconductor devices | |
| EP1271620B1 (en) | Method and apparatus for heat treatment of semiconductor films | |
| US2820932A (en) | Contact structure | |
| JP6037083B2 (en) | Manufacturing method of semiconductor device | |
| US2913642A (en) | Method and apparatus for making semi-conductor devices | |
| CN109712877A (en) | Ohm contact electrode, HEMT device and preparation method | |
| KR930004711B1 (en) | Ohmic electrode and its forming method | |
| CN111128709A (en) | Preparation method of Cu-based GaN HEMT gold-free ohmic contact electrode | |
| US3071854A (en) | Method of producing a broad area low resistance contact to a silicon semiconductor body | |
| JPH02122621A (en) | Manufacture of semiconductor device | |
| US3220380A (en) | Deposition chamber including heater element enveloped by a quartz workholder | |
| US6191485B1 (en) | Semiconductor device | |
| CN111128710A (en) | Preparation method of GaN HEMT gold-free low-roughness ohmic contact electrode | |
| GB1010698A (en) | Soldering connecting wires to semiconductor bodies | |
| JP2008205415A (en) | Electrostatic chuck | |
| US2845375A (en) | Method for making fused junction semiconductor devices | |
| JP3474406B2 (en) | Silicon heating element and semiconductor manufacturing apparatus using the same | |
| US3018539A (en) | Diffused base transistor and method of making same | |
| JPS5846167B2 (en) | Manufacturing method of semiconductor device | |
| JP3325179B2 (en) | Manufacturing method of circuit breaker electrode | |
| JPH02246322A (en) | Vapor growth equipment | |
| JPS63306623A (en) | Method of sintering semiconductor device | |
| JPH0279434A (en) | Heat treatment method for semiconductor substrate and its device |