JPH02122072A - Production of target for sputtering and thin film, and optical recording medium - Google Patents
Production of target for sputtering and thin film, and optical recording mediumInfo
- Publication number
- JPH02122072A JPH02122072A JP27421288A JP27421288A JPH02122072A JP H02122072 A JPH02122072 A JP H02122072A JP 27421288 A JP27421288 A JP 27421288A JP 27421288 A JP27421288 A JP 27421288A JP H02122072 A JPH02122072 A JP H02122072A
- Authority
- JP
- Japan
- Prior art keywords
- sputtering
- target
- thin film
- optical recording
- recording medium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 21
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 18
- 230000003287 optical effect Effects 0.000 title claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 4
- 238000005477 sputtering target Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 4
- 239000010408 film Substances 0.000 abstract description 18
- 230000001681 protective effect Effects 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- -1 chalcogenide compounds Chemical class 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、３１を主成分とするスパッタリングに好適な
ターゲットと該ターゲットを用いての薄膜の製造方法お
よび、該薄膜を支持体上に、誘電体膜およびまたは保護
膜として設けた光記録媒体に関する。Detailed Description of the Invention (Industrial Application Field) The present invention provides a target suitable for sputtering containing 31 as a main component, a method for producing a thin film using the target, and a method for producing a thin film on a support. The present invention relates to an optical recording medium provided as a dielectric film and/or a protective film.
（従来の技術）
光により情報を再生しまたは記録、再生する機能を有す
る材料、例えばＴｅ等からのカルコゲナイド化合物や、
ＴｂＦａｏｏ等の希土類と遷移金属の合金を用いての光
記録媒体が近年盛んに開発されているが、該材料は酸化
され易く、耐蝕性に劣る欠点を有しており、これら材料
からの記録薄膜を保護するための透明薄膜を記録薄膜上
に設ける等の技術が開発されている。例えば特公昭８２
−２７４５８号公報に開示されている。またこれ等光記
録媒体以外の分野においてもＳｌを主たる成分とする薄
膜の利用が盛んである。これらＳｌを主成分とする、ま
たはＳＩを含有する膜を製造するには、ＣＶＤ法、スパ
ッタリング法等の成膜法が知られている。(Prior art) Materials that have the function of reproducing, recording, and reproducing information using light, such as chalcogenide compounds made from Te, etc.
Optical recording media using alloys of rare earths and transition metals such as TbFaoo have been actively developed in recent years, but these materials have the disadvantage of being easily oxidized and having poor corrosion resistance, and recording thin films made of these materials have been widely developed. Techniques have been developed in which a transparent thin film is provided on the recording thin film to protect the data. For example, special public service in 1982
It is disclosed in Japanese Patent No.-27458. Thin films containing Sl as a main component are also widely used in fields other than optical recording media. Film forming methods such as the CVD method and the sputtering method are known for manufacturing these films mainly composed of Sl or containing SI.
（発明が解決しようとする課題）
Ｓｌを含有する薄膜の製造において、比較的安価で、大
量生産に適したスパッタリング方法があるが、スパッタ
リング方法によりＳＩ金含有薄膜を作成するときは、３
１，Ｓｉの酸化物、ＳＩの窒化物をターゲットに用いて
スパッタリングを行うが、これらターゲットは電気抵抗
が高く、直流では放電し難い問題を仔している。そのた
め高周波により放電させ、スパッタリングにより成膜す
るが高周波によるスパッタリングのときは、基板温度が
上昇する傾向を有しており、このため基板（支持体）の
熱が薄膜に伝わり熱応力が蓄積する等して、薄膜にクラ
ックが発生し易い等の欠点が生じる。また基板（支持体
）に高分子物を用いたときは、熱変形が生じたりする問
題点をも有している。(Problems to be Solved by the Invention) There is a sputtering method that is relatively inexpensive and suitable for mass production in the production of thin films containing Sl.
1. Sputtering is performed using Si oxide and Si nitride as targets, but these targets have a high electrical resistance and have the problem of being difficult to discharge with direct current. For this reason, a film is formed by discharging with high frequency and sputtering, but when sputtering with high frequency, the substrate temperature tends to rise, and as a result, the heat of the substrate (support) is transmitted to the thin film, causing thermal stress to accumulate, etc. This results in drawbacks such as the tendency for cracks to occur in the thin film. Furthermore, when a polymer is used for the substrate (support), there is a problem that thermal deformation occurs.
（課題を解決するための手段）
本発明は、Ｓｉ主体の、またはＳＩ金含有薄膜をスパッ
タリングにより成膜するとき、直流でも放電可能なすぐ
れたターゲットと該ターゲットを用いての成膜法および
、該成膜により得られた薄膜を支持体−ヒに設けた光記
録媒体を提供するものである。(Means for Solving the Problems) The present invention provides an excellent target capable of discharging even direct current when forming a Si-based or SI gold-containing thin film by sputtering, a film forming method using the target, and The present invention provides an optical recording medium in which a thin film obtained by the film formation is provided on a support.
すなわち本発明は、Ｓｉを主成分とするスバ・ツタリン
グターゲットにおいて、Ｐ、Ａｓ、Ｓｂの元素から選ば
れた一種また二種以上の元素が、該ターゲット中にｏ、
ｏｏｏｔ〜１．０原子％の範囲で含まれていることを特
徴とするスパッタリングターゲットであり、前記の特定
のターゲットを用いてのＳｉ含打薄膜をスパッタリング
により製膜することを特徴とする薄膜の製造方法であり
、また前記ターゲットを用いてスパッタリングにより得
られるＳｉ含有薄膜を少なくとも支持体」−に有するこ
とを特徴とする光記録媒体である。That is, the present invention provides a suba-tuttering target containing Si as a main component, in which one or more elements selected from the elements P, As, and Sb are present in the target.
This is a sputtering target characterized in that the Si-impregnated thin film is formed by sputtering using the above-mentioned specific target. It is also an optical recording medium characterized in that at least a support has a Si-containing thin film obtained by sputtering using the target.
本発明のＳＩを主成分とするスパッタリングターゲット
において、含有せしめる元素としては、ＰｌＡＳ、Ｓｂ
が好ましいものであるが、中でもＰが特に好ましく、ま
たこれら元素の一種または二種以上の含有ｍとしては、
ｏ、ｏｏｏｉ〜１．０原子％であり、０．０００１％未
膚では本発明の目的に合致せず、また１、０％を超える
ときは、Ｓｌ主体膜の機能的特性を損うことになる、例
えばもろくなる、耐蝕性に悪影響を及ぼす等の難点を有
することになる。In the sputtering target containing SI as a main component of the present invention, the elements contained include PlAS, Sb
are preferred, among which P is particularly preferred, and m containing one or more of these elements is as follows:
o,oooi~1.0 at%, and if it is less than 0.0001%, it will not meet the purpose of the present invention, and if it exceeds 1.0%, it will impair the functional properties of the Sl-based film. For example, it has disadvantages such as becoming brittle and having an adverse effect on corrosion resistance.
本発明のＳｉ含仔薄膜としては、例えばＳＩとＰｌＡｓ
、Ｓｂの一種または二種以上の元素からなるもの、さら
には５１３Ｎ４に、ＳＩＯ□に、ＳｉＧに 各々、Ｐ
ｓ Ａ ｓ、 Ｓ ｂの一種または二種以りの元素が含
有されたもの、等が挙げられる。Examples of the Si-containing thin film of the present invention include SI and PlAs.
, consisting of one or more elements of Sb, and furthermore, 513N4, SIO□, and SiG, P
Examples include those containing one or more of the elements sA s and Sb.
（実施例）
ターゲットとして表−■に示したｆ’ｌｋ Ｐを含有せ
しめたＳｌの各ターゲットを用い、スパッタガスとして
Ａｒ７０ｖｏｅ％とＮ２３０ｖｏＱ％の混合ガスを用い
て、反応性直流マグネトロンスパッタリングを行った。(Example) Reactive direct current magnetron sputtering was performed using each of the Sl targets containing f'lk P shown in Table-■ as targets and a mixed gas of Ar70voe% and N230voQ% as sputtering gas. .
また、安定な５ｌＯＮ４主体膜が得られる条件において
は、護膜を、ポリカーボネートの支持体上にＴｂＦｅＣ
，膜を形成した円形板のＴｂＦｅＣ６膜上にＳｌ、１Ｎ
、主体膜として形成して光記録媒体を得た。In addition, under conditions where a stable 5lON4-based film can be obtained, the protective film can be formed using TbFeC on a polycarbonate support.
, Sl, 1N on the TbFeC6 film of the circular plate on which the film was formed.
, was formed as a main film to obtain an optical recording medium.
該光記録媒体上の保護膜としてのｓ ＋ 、ｌ Ｎ ４
二に体膜の所見を表−■に示す。s + , l N 4 as a protective film on the optical recording medium
Second, the body membrane findings are shown in Table - ■.
表−■
（発明の効果）
薄膜として種々用途に有用なＳｌ主体の薄膜をスパッタ
リングにより成膜せんとするとき、本発明の特定の元素
を含イ了せしめたＳｉ主成分のターゲットは、直流スパ
ッタリングにおいても容易に、成膜しうるターゲットで
あり、がっこのターゲットを用いることにより、得られ
る薄膜は、光記録媒体の保Ｎ膜等としても何州であるこ
とが判った。Table - ■ (Effects of the invention) When a thin film mainly composed of Sl, which is useful for various purposes, is to be formed by sputtering, the Si-based target containing the specific elements of the present invention can be used by direct current sputtering. It is a target that can be easily formed into a film, and it has been found that the thin film obtained by using this target can be used as a N-holding film for optical recording media.
Claims (1)
おいて、Ｐ、Ａｓ、Ｓｂの元素から選ばれたー種また二
種以上の元素が、該ターゲット中に０．０００１〜１．
０原子％の範囲で含まれていることを特徴とするスパッ
タリングターゲット。 ２ 請求項（１）のスパッタリングターゲットを用いて
Ｓｉ含有薄膜をスパッタリングにより製造することを特
徴とする薄膜の製造方法。 （３）請求項（２）の方法によって得られたＳｉ含有の
薄膜を支持体上に有することを特徴とする光記録媒体。Scope of Claims: (1) In a sputtering target containing Si as a main component, one or more elements selected from the elements P, As, and Sb are contained in the target in an amount of 0.0001 to 1.
A sputtering target characterized in that the sputtering target is contained in a range of 0 atomic %. 2. A method for producing a thin film, comprising producing a Si-containing thin film by sputtering using the sputtering target according to claim (1). (3) An optical recording medium comprising, on a support, a Si-containing thin film obtained by the method of claim (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27421288A JPH02122072A (en) | 1988-10-29 | 1988-10-29 | Production of target for sputtering and thin film, and optical recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27421288A JPH02122072A (en) | 1988-10-29 | 1988-10-29 | Production of target for sputtering and thin film, and optical recording medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02122072A true JPH02122072A (en) | 1990-05-09 |
Family
ID=17538596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27421288A Pending JPH02122072A (en) | 1988-10-29 | 1988-10-29 | Production of target for sputtering and thin film, and optical recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02122072A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0586809A1 (en) * | 1992-07-15 | 1994-03-16 | "EMIEL VANDERSTRAETEN" Société de personnes à responsabilité limitée | Sputter cathode and method for the manufacture of this cathode |
| JPWO2005031028A1 (en) * | 2003-09-26 | 2007-11-15 | 株式会社東芝 | Sputtering target, Si oxide film using the same, manufacturing method thereof, and display device |
-
1988
- 1988-10-29 JP JP27421288A patent/JPH02122072A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0586809A1 (en) * | 1992-07-15 | 1994-03-16 | "EMIEL VANDERSTRAETEN" Société de personnes à responsabilité limitée | Sputter cathode and method for the manufacture of this cathode |
| BE1007067A3 (en) * | 1992-07-15 | 1995-03-07 | Emiel Vanderstraeten Besloten | SPUTTER CATHOD AND METHOD FOR MANUFACTURING THIS CATHOD |
| US5853816A (en) * | 1992-07-15 | 1998-12-29 | Emiel Vanderstraeten | Method of coating a sputter cathode with a layer of material to be applied to a substrate by sputtering |
| JPWO2005031028A1 (en) * | 2003-09-26 | 2007-11-15 | 株式会社東芝 | Sputtering target, Si oxide film using the same, manufacturing method thereof, and display device |
| US7998324B2 (en) | 2003-09-26 | 2011-08-16 | Kabushiki Kaisha Toshiba | Sputtering target and process for producing si oxide film therewith |
| JP4791825B2 (en) * | 2003-09-26 | 2011-10-12 | 株式会社東芝 | Sputtering target, Si oxide film using the same, manufacturing method thereof, and display device |
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