JPH02121562A - Close-contact type image sensor - Google Patents
Close-contact type image sensorInfo
- Publication number
- JPH02121562A JPH02121562A JP63275486A JP27548688A JPH02121562A JP H02121562 A JPH02121562 A JP H02121562A JP 63275486 A JP63275486 A JP 63275486A JP 27548688 A JP27548688 A JP 27548688A JP H02121562 A JPH02121562 A JP H02121562A
- Authority
- JP
- Japan
- Prior art keywords
- red
- image sensor
- array
- read
- color
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000035945 sensitivity Effects 0.000 claims description 9
- 230000003595 spectral effect Effects 0.000 claims description 8
- 238000003491 array Methods 0.000 claims description 5
- 239000003086 colorant Substances 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 239000000835 fiber Substances 0.000 abstract description 2
- 238000012015 optical character recognition Methods 0.000 abstract 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は画像読取装置に関し、特に分光感度特性が選択
出来る密着型イメージセンサに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an image reading device, and particularly to a contact type image sensor in which spectral sensitivity characteristics can be selected.
従来、この種の画像読取装置は分光感度特性を変える場
合フィルターを用いていた。Conventionally, this type of image reading device has used a filter to change the spectral sensitivity characteristics.
上述した従来のフィルターによって分光感度特性を変え
る方法は、密着型の場合、センサが大きい為、全面を覆
う複数のフィルターを限られた空間に取り付けるのは困
難である。また、異なるフォトセル毎にフィルターを取
り付けて電気的走査で分光感度特性を変えるいわゆるカ
ラーセンサは。In the case of the conventional method of changing spectral sensitivity characteristics using filters described above, in the case of a close-contact type, the sensor is large, so it is difficult to install a plurality of filters that cover the entire surface in a limited space. In addition, there are so-called color sensors that have filters attached to each different photocell and change the spectral sensitivity characteristics through electrical scanning.
高価である主駆動回路が複雑になるという欠点がある。The drawback is that the main drive circuit is expensive and complex.
本発明の密着型イメージセンサは、異なる発光波長の光
源を切り換え、フィルターを使わずに総合分光感度特性
を変える機能を持たせたものである。The contact image sensor of the present invention has a function of switching light sources with different emission wavelengths and changing the overall spectral sensitivity characteristics without using a filter.
すなわち本発明によれば、読取用紙に比較的近接してレ
ンズアレーを設け、このレンズアレーの上部に平行に一
次元イメージセンサを配置し、該レンズアレーの側方に
光源を置いて該レンズアレーの真下の読取用紙を照射す
るようにした密着型イメージセンサにおいて、前記光源
が、出力波長特性の互いに異なる複数個のLEDアレー
を互いに並列に配置して構成した光源であり、これらL
EDアレーをスイッチングすることにより総合分光感度
特性を変えてドロップアウトカラーが選択できるように
したこと全特徴とする密着型イメーゾセンサが得られる
。That is, according to the present invention, a lens array is provided relatively close to the reading paper, a one-dimensional image sensor is arranged in parallel above the lens array, and a light source is placed on the side of the lens array. In the contact image sensor, the light source is configured by arranging a plurality of LED arrays with different output wavelength characteristics in parallel, and these L
By switching the ED array, the overall spectral sensitivity characteristic can be changed and a dropout color can be selected.A contact type image sensor is obtained.
次に1本発明の一実施例について図面によって説明する
。Next, an embodiment of the present invention will be described with reference to the drawings.
第1図は1本発明の実施例による総合分光感度特性が2
種類選べる密着型イメーゾセンサの概略的な斜視図であ
る。第1図において、レンズアレー2は屈折率分布形フ
ァイバーレンズを多数配列して成るレンズアレーであり
、読取用紙5の王立等倍実像を一次元イメージ七ンサ1
の光電変換面に結ぶ。光電変換面に結ばれた映像は一次
元イメーソセンサ1によって電気信号に変換される。Figure 1 shows that the overall spectral sensitivity characteristics according to the embodiment of the present invention are 2.
FIG. 2 is a schematic perspective view of a contact type image sensor from which types can be selected. In FIG. 1, a lens array 2 is a lens array formed by arranging a large number of gradient index fiber lenses.
Connect to the photoelectric conversion surface. The image connected to the photoelectric conversion surface is converted into an electrical signal by the one-dimensional image sensor 1.
赤色LEDアレー4はピーク波長が660 nm付近に
あるLEDのアレーであって赤色の光源を提供し。The red LED array 4 is an array of LEDs having a peak wavelength around 660 nm and provides a red light source.
赤系統の色が良く反射する。すなわち、赤色をドロップ
アウトカラーとする。Red colors reflect well. In other words, red is the dropout color.
黄緑色LEDアレー3はピーク波長が570 nm付近
にあるLEDのアレーであり、黄緑色の光TTi、に提
供し、黄緑色系統の色が良く反射する。すなわち。The yellow-green LED array 3 is an array of LEDs with a peak wavelength around 570 nm, and provides yellow-green light TTi, and yellow-green colors are well reflected. Namely.
黄緑色全ドロップアウトカラーとする。All dropout colors will be yellow-green.
以上説明したように、2つの異なるピーク発光波長をも
つLED−i切換える事により、黄緑色のLEDアレー
を点燈させた時は黄緑色は読み落とし。As explained above, by switching between LED-i with two different peak emission wavelengths, when the yellow-green LED array is turned on, the yellow-green color is missed.
赤色の印刷は読みとる。また赤色のLEDアレー全点燈
させた時は赤色の印刷は読み落とす。例えば光学文字読
取装置として赤色の文字記入わくヲ読み落としつつ赤色
の印鑑等全貌み取る事が可能になる。Read the red print. Also, when all red LED arrays are lit, red printing will be missed. For example, as an optical character reading device, it is possible to read the whole red stamp etc. while overlooking the written red characters.
上記の説明においてはLEDアレーとして2種類のもの
を使用したが、3種類以上を対称に又はそれに近く配置
してもよい。ただし実際には5種類以上となるとLED
アレーの一部が読取用紙5より離れるので、その感度は
低下する。In the above description, two types of LED arrays are used, but three or more types may be arranged symmetrically or close to it. However, in reality, if there are more than 5 types, LED
Since a part of the array is separated from the reading paper 5, its sensitivity is reduced.
以下説明したように1本発明は複数の互いに異なるピー
ク発光波長を持つLED i切臭えることにより、所望
の色の文字記号のみを読み出すことが可能となる。As explained below, the present invention makes it possible to read out only characters and symbols of a desired color by using a plurality of LEDs having different peak emission wavelengths.
第1図 梁7c1メージニレザFigure 1 Beam 7c1 Meji Niza
第1図は本発明の概略的な斜視図である。
記号の説明二1・・・−次元イメージセンサ、2・・・
レンズアレー、3・・・黄緑色LEDアレー、4・・・
赤色LEDアレー、5・・・読取用紙。FIG. 1 is a schematic perspective view of the invention. Explanation of symbols 21...-dimensional image sensor, 2...
Lens array, 3... Yellow-green LED array, 4...
Red LED array, 5...reading paper.
Claims (1)
のレンズアレーの上部に平行に一次元イメージセンサを
配置し、該レンズアレーの側方に光源を置いて該レンズ
アレーの真下の読取用紙を照射するようにした密着型イ
メージセンサにおいて、 前記光源が、出力波長特性の互いに異なる複数個のLE
Dアレーを互いに並列に配置して構成した光源であり、
これらLEDアレーをスイッチングすることにより総合
分光感度特性を変えてドロップアウトカラーが選択でき
るようにしたことを特徴とする密着型イメージセンサ。[Claims] 1. A lens array is provided relatively close to the reading paper, a one-dimensional image sensor is arranged parallel to the top of this lens array, and a light source is placed on the side of the lens array. In a close-contact image sensor that irradiates the reading paper directly below the array, the light source includes a plurality of LEs having different output wavelength characteristics.
A light source configured by arranging D arrays in parallel with each other,
This contact type image sensor is characterized in that by switching these LED arrays, the overall spectral sensitivity characteristics can be changed and a dropout color can be selected.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63275486A JPH02121562A (en) | 1988-10-31 | 1988-10-31 | Close-contact type image sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63275486A JPH02121562A (en) | 1988-10-31 | 1988-10-31 | Close-contact type image sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02121562A true JPH02121562A (en) | 1990-05-09 |
Family
ID=17556192
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63275486A Pending JPH02121562A (en) | 1988-10-31 | 1988-10-31 | Close-contact type image sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02121562A (en) |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58182784A (en) * | 1982-04-20 | 1983-10-25 | Nec Corp | Optical information reader |
JPS61198718A (en) * | 1985-02-28 | 1986-09-03 | Fujitsu Ltd | Liquid-phase epitaxial growth method |
JPH01192186A (en) * | 1988-01-27 | 1989-08-02 | Mitsubishi Electric Corp | Optical functional device |
JPH01226191A (en) * | 1988-03-07 | 1989-09-08 | Nec Corp | Manufacture of algainp buried structure semiconductor laser |
JPH0448669A (en) * | 1990-06-14 | 1992-02-18 | Fujitsu Ltd | Semiconductor laser device and its manufacture |
JPH05291695A (en) * | 1992-04-07 | 1993-11-05 | Hitachi Ltd | Optical integrated circuit |
JPH06283803A (en) * | 1993-03-25 | 1994-10-07 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light emitting device |
JPH0774108A (en) * | 1993-08-31 | 1995-03-17 | Mitsubishi Cable Ind Ltd | Vapor phase epitaxy and magnesium material therefor |
JPH0936426A (en) * | 1995-07-17 | 1997-02-07 | Sumitomo Chem Co Ltd | Fabrication of iii-v compound semiconductor |
-
1988
- 1988-10-31 JP JP63275486A patent/JPH02121562A/en active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58182784A (en) * | 1982-04-20 | 1983-10-25 | Nec Corp | Optical information reader |
JPS61198718A (en) * | 1985-02-28 | 1986-09-03 | Fujitsu Ltd | Liquid-phase epitaxial growth method |
JPH01192186A (en) * | 1988-01-27 | 1989-08-02 | Mitsubishi Electric Corp | Optical functional device |
JPH01226191A (en) * | 1988-03-07 | 1989-09-08 | Nec Corp | Manufacture of algainp buried structure semiconductor laser |
JPH0448669A (en) * | 1990-06-14 | 1992-02-18 | Fujitsu Ltd | Semiconductor laser device and its manufacture |
JPH05291695A (en) * | 1992-04-07 | 1993-11-05 | Hitachi Ltd | Optical integrated circuit |
JPH06283803A (en) * | 1993-03-25 | 1994-10-07 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light emitting device |
JPH0774108A (en) * | 1993-08-31 | 1995-03-17 | Mitsubishi Cable Ind Ltd | Vapor phase epitaxy and magnesium material therefor |
JPH0936426A (en) * | 1995-07-17 | 1997-02-07 | Sumitomo Chem Co Ltd | Fabrication of iii-v compound semiconductor |
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