JPH02114557A - Semiconductor device - Google Patents

Abstract

PURPOSE:To reduce the number of via holes and to reduce a chip size by a method wherein the circumference of a semiconductor device is surrounded by a ground conductor. CONSTITUTION:The circumference of a semiconductor device is surrounded by a ground conductor 6 connected to ground electrodes 3 on the rear of the semiconductor device via holes 4. In general, a space is available in a circumferential part of the semiconductor device 8; the ground conductor 6 can be arranged easily; a width of the ground conductor 6 can be made large; accordingly, the individual ground electrodes 3 and the via holes 4 can be connected at a low inductance. Thereby, the via holes 4 can be used in common; the individual ground electrodes 3 can be grounded by the via holes 4 whose number is small; a chip size can be reduced; a cost of the semiconductor device 8 can be lowered.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a semiconductor device, and particularly to a monolithic microwave integrated circuit device (hereinafter referred to as MMMoa). [Prior Art] FIG. , is a schematic top view showing an example of a conventional semiconductor device, in which (1) is a semiconductor substrate, each element is formed on this, and o(2), f3+, and (5) are metal electrodes, respectively. (2) is an electrode used for high frequency signals (hereinafter referred to as RF electrode), (3) is a ground electrode, (
5) is an electrode for applying a DC bias (hereinafter referred to as a pole). (4) is a ground electrode (3) on the back surface of the semiconductor substrate (1) and a ground electrode (3) on the top surface of the semiconductor substrate (1). ) is a via hole that forms a through conductor line.

Next, the operation will be explained. Since MMMoa generally handles high frequency signals in the microwave band, the metal wiring and the probe needle for evaluation function as a distributed constant line. For this reason, a transmission line such as a coplanar line is also used for the probe needle. In the evaluation of the semiconductor device in the wafer state, the ground conductor of the globe needle and the ground electrode (3) of the semiconductor device are
It is necessary to make contact in a good condition in terms of high frequency to avoid unnecessary reflection of high frequency signals. For this reason, a ground electrode (3) must be provided near the RF electrode (2), and each ground electrode (31) must be brought into contact with the ground conductor of the probe needle, thus requiring a large number of ground electrodes (3). Also, when applying DC bias, there is a high frequency signal that leaks from the semiconductor device, so it is necessary to use a transmission line for the needle for applying DC bias to achieve the desired characteristic impedance at high frequencies. The grounding conductor of the needle and the grounding electrode (3) of the semiconductor device must be in good contact at high frequencies. Therefore, the grounding electrode (3) is also required for the DOK pole (5), and a large number of grounding electrodes ( 3) is necessary.

Generally, the ground electrode (3) is connected to the ground electrode (3) on the back side by a via hole (4), so if there are a large number of ground electrodes (3), a large number of via holes (4) are required. However, Via Hall has 300 voices mx 3oop.
Since a large space of m is required, the size of the semiconductor device (hereinafter referred to as chip size) becomes large.

[The problem that the invention attempts to solve]

Since the conventional semiconductor device is configured as described above, a ground electrode [3] is placed near each RF electrode (2) and DCi pole (5).
1, and it is necessary to provide a large number of via holes (4), resulting in a problem that the chip size becomes large and the cost increases.

This invention was made to solve the above problems, and by surrounding the semiconductor device with a ground conductor, the number of via holes can be reduced, the chip size can be reduced, and the cost can be reduced. An object of the present invention is to obtain a semiconductor device that can reduce the

[Means to solve the problem]

In the semiconductor device according to the present invention, the semiconductor device is surrounded by a ground conductor.

[For production]

In the semiconductor device according to the present invention, by surrounding the semiconductor device with a ground conductor, the via holes necessary for a large number of ground electrodes can be shared, and the number of via holes can be reduced, so that the chip size can be reduced.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings. 1st
1 is a schematic top view of a semiconductor device according to an embodiment of the present invention, and FIG. 2 is a schematic top view showing a wafer before the semiconductor device shown in FIG. 1 is scribed from the wafer. In the figure, (1) to (5) are the same as those shown in the conventional example of FIG. 5, and therefore their explanation will be omitted. The shaded area in the figure indicates the ground electrode (3) on the back side of the semiconductor device via the pie 7 hole (4)
) and surrounds the semiconductor device.

(7) is a scribe line, (8) is a semiconductor device, (9
) is a wafer.

Next, the operation will be explained. RIF of semiconductor device R(8)
Since the electrode (2), the ground electrode (3) and the DC electrode (5) are formed around the semiconductor device (8) for easy assembly, the ground conductor (6) is It is most efficient to provide it in the surrounding area. Further, in general, no circuit elements are provided around the semiconductor device (8) in order to avoid damage during scribing. There is generally ample space around the semiconductor device (8), and the ground conductor (6) can be easily arranged, and the width of the ground conductor (6) can be made large, so each ground electrode ( 3) and via hole (4) can be connected.

In this way, the ground conductor (6) is placed around the semiconductor device (8).
Since the via holes (4) can be shared, each ground electrode (3) can be
) can be grounded, the chip size can be reduced, and the cost of the semiconductor device (8) can be lowered.

Next, for evaluation in the wafer state, a probe needle is applied from the top surface in the state shown in FIG. The scribe line (7) is a portion that is scraped off during wafer cutting (scribing).

In the above embodiment, the ground conductor (6) was provided outside the scribe line (7), but as shown in the top view of the Uni-Noh shown in FIG. By providing this, the width of the ground conductor (6) can be increased and the inductance can be reduced, so that the number of via holes (4) can be further reduced.

Furthermore, by making the width the same, the chip size can be reduced by the width of the scribe line (7), and the chip size can be further reduced compared to that shown in FIG.
8) The cost can be reduced.

Furthermore, as shown in the top view of the wafer shown in FIG. 4, by providing the ground conductor (6) over a plurality of semiconductor devices, it is also possible to reduce the chip size, and the same effect as in the above embodiment can be achieved. play.

〔Effect of the invention〕

As described above, according to the present invention, since the semiconductor device is surrounded by a ground conductor, the via holes required for a large number of ground electrodes can be shared, and the number of via holes can be reduced, so the chip size can be reduced. This has the effect of lowering the cost of semiconductor devices.

[Brief explanation of the drawing]

FIG. 1 is a schematic top view of a semiconductor device according to an embodiment of the present invention, FIG. 2 is a schematic top view showing a wafer 1 before the semiconductor device shown in FIG. 1 is scribed from a wafer, and FIG. FIG. 4 is a schematic top view showing a wafer in which a ground conductor is provided on a scribe line according to another embodiment of the present invention, and FIG. 4 shows a wafer in which a ground conductor is provided across a plurality of semiconductor devices according to another embodiment of the present invention. FIG. 5 is a schematic top view of a conventional semiconductor device. In the figure, (1) is a semiconductor substrate, (2) is an RF4 pole,
(3) is the ground electrode, (4) is the via hole, (5) is D
C electrode, (6) is a main conductor, (7) is a scribe line, (8) is a semiconductor device, and (9) is a wafer. In addition, in the figures, the same reference numerals indicate the same or corresponding parts. Figure 1 Ushisho basic handling measure F Densu Ngong Ping t Nokeme via hole DX setup) 1 Wafer Figure 5

Claims (1)

[Claims] 1. A semiconductor device having a plurality of high frequency signal electrodes (hereinafter referred to as RF electrodes) and a ground electrode on a semiconductor substrate, characterized in that the semiconductor device is surrounded by a ground conductor.