JPH0211166U - - Google Patents

Info

Publication number
JPH0211166U
JPH0211166U JP8952688U JP8952688U JPH0211166U JP H0211166 U JPH0211166 U JP H0211166U JP 8952688 U JP8952688 U JP 8952688U JP 8952688 U JP8952688 U JP 8952688U JP H0211166 U JPH0211166 U JP H0211166U
Authority
JP
Japan
Prior art keywords
crystal growth
raw material
single crystal
growth apparatus
melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8952688U
Other languages
English (en)
Other versions
JPH0543107Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1988089526U priority Critical patent/JPH0543107Y2/ja
Publication of JPH0211166U publication Critical patent/JPH0211166U/ja
Application granted granted Critical
Publication of JPH0543107Y2 publication Critical patent/JPH0543107Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Description

【図面の簡単な説明】
第１図は本考案の一実施例を示す縦断面図、第
２図は、外側環状領域の融液の温度を縦軸に、坩
堝の回転角度を横軸にとつて示すグラフで、実線
は本考案装置に依る場合を示し、一点鎖線は従来
装置に依る場合を示すもの、第３図は従来の外側
環状領域における温度分布説明図、第４図は同上
の場合のグラフで、外側環状領域における融液の
温度を縦軸に、また、坩堝の回転角度を横軸に採
つたものを示している。 １…チヤンバ、３…坩堝、９…隔壁部材、１０
ｂ…原料供給口。

Claims (1)

  1. 【実用新案登録請求の範囲】 (1) 融液面下に融液が相通じる状態に内側領域
    と外側環状領域とに坩堝内を区画する筒状隔壁部
    材を備えた単結晶成長装置において、原料の供給
    される部位たる上記外側環状領域に複数の原料供
    給口を均一に分布させて設けたことを特徴とする
    単結晶成長装置。 (2) 融液面下に融液が相通じる状態に内側領域
    と外側環状領域とに坩堝内を区画する筒状隔壁部
    材を備えた単結晶成長装置において、複数の原料
    供給管を有する１個の漏斗を、前記原料供給管の
    供給口が前記外側領域に均一に分布して臨むよう
    になして、付設したことを特徴とする単結晶成長
    装置。
JP1988089526U 1988-07-07 1988-07-07 Expired - Lifetime JPH0543107Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1988089526U JPH0543107Y2 (ja) 1988-07-07 1988-07-07

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1988089526U JPH0543107Y2 (ja) 1988-07-07 1988-07-07

Publications (2)

Publication Number Publication Date
JPH0211166U true JPH0211166U (ja) 1990-01-24
JPH0543107Y2 JPH0543107Y2 (ja) 1993-10-29

Family

ID=31314075

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1988089526U Expired - Lifetime JPH0543107Y2 (ja) 1988-07-07 1988-07-07

Country Status (1)

Country Link
JP (1) JPH0543107Y2 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5690285U (ja) * 1980-09-26 1981-07-18
JPH04154688A (ja) * 1990-10-17 1992-05-27 Komatsu Electron Metals Co Ltd 半導体単結晶製造装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6126592A (ja) * 1984-07-18 1986-02-05 Fujitsu Ltd 結晶成長装置
JPS6136197A (ja) * 1984-07-06 1986-02-20 ゼネラル　シグナル　コーポレーシヨン チヨクラルスキー技術を用いて浅いるつぼから半導体材料の単結晶を成長させる装置及び方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6136197A (ja) * 1984-07-06 1986-02-20 ゼネラル　シグナル　コーポレーシヨン チヨクラルスキー技術を用いて浅いるつぼから半導体材料の単結晶を成長させる装置及び方法
JPS6126592A (ja) * 1984-07-18 1986-02-05 Fujitsu Ltd 結晶成長装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5690285U (ja) * 1980-09-26 1981-07-18
JPH04154688A (ja) * 1990-10-17 1992-05-27 Komatsu Electron Metals Co Ltd 半導体単結晶製造装置

Also Published As

Publication number Publication date
JPH0543107Y2 (ja) 1993-10-29

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