JPH02109388A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPH02109388A JPH02109388A JP26192488A JP26192488A JPH02109388A JP H02109388 A JPH02109388 A JP H02109388A JP 26192488 A JP26192488 A JP 26192488A JP 26192488 A JP26192488 A JP 26192488A JP H02109388 A JPH02109388 A JP H02109388A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- junction
- laser device
- algaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 230000000903 blocking effect Effects 0.000 claims abstract description 5
- 238000005253 cladding Methods 0.000 claims description 9
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 abstract description 9
- 239000002019 doping agent Substances 0.000 abstract description 5
- 230000010355 oscillation Effects 0.000 abstract description 5
- 239000013078 crystal Substances 0.000 abstract description 3
- 230000000694 effects Effects 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- 101150110330 CRAT gene Proteins 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は半導体レーザ装置の製造上の構造に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a manufacturing structure of a semiconductor laser device.
第２図は従来の半導体レーザ装置を示す構造断面図で、
図において、：１）はｎ−ＧａＡｓ 基板、（２）は
ｎ−ＡｌＧａＡｓ下クラット層り１３）ハ活性ｒ（ａ、
！４．＋ ハｌ） −ＡＩＧａＡｓ上り５ ツ）’層、
（５）はｎ −ＧａＡｓ Ｎ流用止層。Figure 2 is a cross-sectional view of the structure of a conventional semiconductor laser device.
In the figure: 1) is the n-GaAs substrate, (2) is the n-AlGaAs lower crat layer 13) is the active r(a,
! 4. + Hal) -AIGaAs upstream 5)' layer,
(5) is an n-GaAs N flow stop layer.
「６）はｐ−ＧａＡ、ｓ ：７ンタクト署−（７１はｎ
電極、１８＋はｎ電極、Ｑｌはｐｎ接合である。"6) is p-GaA, s:7 contact station-(71 is n
The electrodes 18+ are n electrodes, and Ql is a pn junction.
次に動作について説明する。Next, the operation will be explained.
ｎ −Ａ ｌ ｘＧａ＋−ｘＡｓ下クラりドＷ １２１
−活性＋１＋３１、ｐ−Ａ、１ｘＧａ＋−ｘＡｓ上クラ
ッド層（４）で−ダブルヘテロ接合を形成したて方向の
キャリアの閉じ込め及び光の閉じ込めを実施する。又−
電流阻止層（５）のない部分にだけ電流が通過され一横
方向のキャリアの閉じ込め及び光の閉じ込めを実施する
。しきい値電流以上電流を注入すると、レーぜ発振を開
始し光出力が得られる。n -A l xGa+-xAs lower cladding W 121
- A double heterojunction is formed with the active +1+31, p-A, 1xGa+-xAs upper cladding layer (4) to carry out carrier confinement and light confinement in the vertical direction. Also-
A current is passed only through the portion without the current blocking layer (5) to effect carrier confinement and light confinement in one lateral direction. When a current equal to or higher than the threshold current is injected, laser oscillation starts and optical output is obtained.
従来の半導体レーザ装置は以上のようｌこ構成されてお
り、かつ結晶成長が高温でｌｊされているので、ｐ型ド
ーパント（例えばＺｎ）が変動しウェハ面内の一部でｐ
ｎ接合が変動し− リモートジャンクションを起こすた
めに歩留りを下げるという問題点があった。Conventional semiconductor laser devices have the above-mentioned configuration, and since crystal growth is performed at high temperatures, the p-type dopant (for example, Zn) fluctuates, causing p-type dopants to form in a part of the wafer surface.
There is a problem in that the n-junction fluctuates and a remote junction occurs, lowering the yield.
この発明は上記のような間頌点を解消するためになされ
たもので、リモートジャンクションを防止し、歩留りを
向上できる半導体レーザ装置を得ることを目的とする。The present invention has been made to solve the above-mentioned problems, and aims to provide a semiconductor laser device that can prevent remote junctions and improve yield.
この発明に係る半導体レーザ装置は発光点近傍でのりモ
ートジャンクションを防止するために、強制的に活性、
＠上部に 接合面を挿入したものである。The semiconductor laser device according to the present invention forcibly activates and
@A joint surface is inserted at the top.
〔作用］
この発８Ｊ］における半導体レーザ装置は、活性層上に
ｐ−ＡｌＧａＡｓリモートジャンクション防止層を挿入
することにより、発光点領域でのりモートジャンクショ
ンが防止され−ウエハ面内で均一な発振歩留りが得られ
る。[Function] In the semiconductor laser device in this oscillation 8J, by inserting a p-AlGaAs remote junction prevention layer on the active layer, a remote junction is prevented in the light emitting point region, and a uniform oscillation yield is achieved within the wafer surface. can get.
以下、この発明の一実施例を図について説明する。第１
ｐａ ＋ｃおいて、（ｌ）はｎ−ＧａＡｓ基板、（２
）はｎＡｌｘＧａ＋−ｘＡｓ 下クラッド層−（３）は
活性層、（４）はｐ−ＡｌＧａＡｓｘＡｓ上クラッド層
−１５）はｎ−ＧａＡｓ電流阻止層−（６）はｐ−Ｇａ
Ａｓ ：ｆｆ ７ タフ）層、（７）はｎ電極、（８）
はｐＨ１極、１９＋はｐ−ＡｌＧａＡｓ Ｕ モー ）
シャンク’、ｔヨン防止層である。An embodiment of the present invention will be described below with reference to the drawings. 1st
pa +c, (l) is n-GaAs substrate, (2
) is nAlxGa+-xAs lower cladding layer - (3) is active layer, (4) is p-AlGaAsxAs upper cladding layer - 15) is n-GaAs current blocking layer - (6) is p-Ga
As: ff7 tough) layer, (7) is n electrode, (8)
is pH 1 pole, 19+ is p-AlGaAs U mode)
This is a shank and yon prevention layer.
次（こ動作ｆこついて説明する。Next, I will explain this operation.
ダブルヘテロ接合の構成及びキャリアの閉じ込め、光の
閉じ込めは前記従来の半導体レーザ装置と同様である。The structure of the double heterojunction, carrier confinement, and light confinement are the same as those of the conventional semiconductor laser device.
結晶成長中における活性領域でのｐ型ドーパントの変動
によるリモートジャンクションを防止するため、活性層
（３）とｐ −Ａ Ｉ ｘＧａ ｌ −ｘＡ、ｓ下クラ
ッド層（４）の間にｐ型ＡｌＧａＡｓ リモートジャン
クション層（９）を挿入し、強制的に 接合を構成した
構造となっている。In order to prevent remote junctions due to p-type dopant fluctuations in the active region during crystal growth, p-type AlGaAs remote is added between the active layer (3) and the p-A I x Ga l-x A,s lower cladding layer (4). It has a structure in which a junction layer (9) is inserted to form a forced connection.
以上のよう１ここの発明によれば、活性領域において強
制的に 接合を構成したので、ドーパントのプロファイ
ルが均一となり、歩留りの向上や。As described above, according to the present invention, a junction is forcibly formed in the active region, so the dopant profile becomes uniform, and the yield is improved.
温度特性、良化の効果がある。It has the effect of improving temperature characteristics.
第１図はこの発明の一実施例１こよる半導体レーザ装置
を示す構造断面図、＠２図は従来の半導体レーザ装置を
示す構造断面図である。
図において、（１）はｎ−ＧａＡｓ基板、１２）はｎ−
ＡｌＧａＡｓ下クラｙ Ｆり１１、（３）は活性層、（
４）はｐ−ＡｌＧａＡｓ上クラッドｌ］＋５１はｎ−Ｇ
ａＡｓ電流阻止層、（６）はｐ−ＧａＡｓコンタクト者
、（７）はｎ電極、１８）はｎ電極、１９）はｐ−Ａ
］ ＧａＡｓリモートジャンクション防止層である。
なお−図中一同一符号は同一部分を示す。FIG. 1 is a structural sectional view showing a semiconductor laser device according to a first embodiment of the present invention, and FIG. 2 is a structural sectional view showing a conventional semiconductor laser device. In the figure, (1) is an n-GaAs substrate, and 12) is an n-GaAs substrate.
AlGaAs lower cry F 11, (3) is the active layer, (
4) is p-AlGaAs upper cladding l]+51 is n-G
aAs current blocking layer, (6) is p-GaAs contact, (7) is n-electrode, 18) is n-electrode, 19) is p-A
] GaAs remote junction prevention layer. Note that the same reference numerals in the figures indicate the same parts.
Claims (1)
型もしくはｐ型Ａｌ＿ｘＧａ＿１＿−＿ｘＡｓ下クラッ
ド層、活性層、ｐ型もしくはｎ型Ａｌ＿ｘＧａ＿１＿−
＿ｘＡｓ上クラッド層のダブルヘテロ構造を有し、ｎ型
もしくはｐ型ＧａＡｓ電流阻止層、ｐ型もしくはｎ型Ｇ
ａＡｓコンタクト層を有する半体体レーザ装置において
、前記活性層と前記ｐ型もしくはｎ型Ａｌ＿ｘＧａ＿１
＿−＿ｘＡｓ上クラッド層との間にｐ型もしくはｎ型Ａ
ｌＧａＡｓ層を有することを特徴とする半導体レーザ装
置。n on a GaAs substrate with n-type or p-type conductivity.
type or p-type Al_xGa_1_-_xAs lower cladding layer, active layer, p-type or n-type Al_xGa_1_-
_x Double heterostructure of As upper cladding layer, n-type or p-type GaAs current blocking layer, p-type or n-type G
In a half-body laser device having an aAs contact layer, the active layer and the p-type or n-type Al_xGa_1
____x P-type or n-type A between As upper cladding layer
A semiconductor laser device characterized by having an lGaAs layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26192488A JPH02109388A (en) | 1988-10-18 | 1988-10-18 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26192488A JPH02109388A (en) | 1988-10-18 | 1988-10-18 | Semiconductor laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02109388A true JPH02109388A (en) | 1990-04-23 |
Family
ID=17368613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26192488A Pending JPH02109388A (en) | 1988-10-18 | 1988-10-18 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02109388A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4119921A1 (en) * | 1990-06-18 | 1992-01-23 | Mitsubishi Electric Corp | SEMICONDUCTOR LASER FOR GENERATING VISIBLE LIGHT |
-
1988
- 1988-10-18 JP JP26192488A patent/JPH02109388A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4119921A1 (en) * | 1990-06-18 | 1992-01-23 | Mitsubishi Electric Corp | SEMICONDUCTOR LASER FOR GENERATING VISIBLE LIGHT |
| US5177757A (en) * | 1990-06-18 | 1993-01-05 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser producing visible light |
| DE4119921C2 (en) * | 1990-06-18 | 1996-12-12 | Mitsubishi Electric Corp | Semiconductor laser for generating visible light |
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