JPH02109379A - Manufacture of light emitting element - Google Patents

Abstract

PURPOSE:To obtain excellent diode characteristics by setting a specified ratio between electric powers which are applied on targets so that the energy particles of hydrogen gas are made to collide against the targets. CONSTITUTION:Mixed gas of CH4, SiH4 and B2H6 is diluted 10 times with H2 gas, and the gas is introduced into a vacuum chamber 71. A voltage from a high frequency power source E1 is applied. Decomposed gas is polymerized on a substrate 8, and a P-type a-SiC film is obtained. Then, in a vacuum chamber 72, voltages are independently applied from high frequency power sources E2a and E2b on a first target T1 comprising solid-state carbon-based material and a second target T2 comprising silicon on a cathode K. The energy particles of H2 gas are made to collide by a sputtering method. Thus an a-C:Si, H film is laminated and formed. It is desirable that the ratio between the electric powers which are applied on the targets T1 and T2 is 3-100%. In a vacuum chamber 73, PH3 gas is used in place of B2H6 gas in the vacuum chamber 71. An N-type a-SiC film is obtained by the same method. An electrode film is formed on said film. When a P-I-N type light emitting element is obtained in this way, excellent light emitting characteristics can be obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION A. Field of Industrial Application The present invention relates to a method of manufacturing a light emitting device made of an amorphous semiconductor.

B3 Summary of the Invention The present invention provides a method for manufacturing a light emitting device in which a hole injection layer and an electron injection layer are laminated on both sides of a light emitting layer, using an amorphous carbon film obtained by sputtering as the light emitting layer. By using an amorphous silicon carbide film obtained by a plasma CVD method as a hole and electron injection layer, the light-emitting layer has a back-hole light-emitting property, and this property can be fully brought out.

C1 Prior Art Conventionally, light-emitting materials include GaAs, GaAsP, GaP, and GaAl2ΔS, which are materials for light-emitting diodes.

Z nS exTer-x, Z nx-cd+-x
Examples include Te, CdTe, etc.

D1 Problems to be solved by the invention However, with such conventional luminescent materials,
For example, in GaP, the peak wavelength (the wavelength at which the emission energy peaks) is 698 nm and the optical energy gap is 1.76 eV, and the peak wavelength and optical energy gap are unique to the luminescent material. Therefore, when you want to change the luminescent properties of a luminescent material, it is necessary to select a luminescent material with the required properties, and in some cases, you may not be able to obtain the properties derived from the required peak wavelength and optical energy gap. There were some problems that arose.

For these reasons, it is being considered to generate an amorphous carbon-based material using sputtering and apply it to a light-emitting material. Specifically, this amorphous carbon-based material is produced in a vacuum container while maintaining the substrate temperature at, for example, 250°C or lower, using graphite as a target, and in the presence of hydrogen gas at, for example, 133.3 mPa to 5X 133.3 Pa. It is generated by sputtering by applying a high frequency voltage or a DC voltage.

Luminescent materials made of such substances have a large optical energy gap (in terms of heat resistance, the gap hardly changes up to 250°C), and can have arbitrary optical energy gaps and luminescent properties by controlling sputtering conditions. Therefore, it has the advantage that materials that meet requests can be easily obtained. In a film made of this luminescent material, strong photoluminescence (pr, ) is observed depending on the size of the optical energy gap (Ego).

FIG. 4 shows the relationship between Ego and the peak value of PL.

In particular, since a film with an Ego of about 3 eV emits blue light, it is possible to realize a large-area blue light-emitting panel that takes advantage of its amorphous properties. Furthermore, by selecting various egos, it is possible to create a light-emitting element that emits colors from red to blue to the tuner pull.

In addition, regarding the PL intensity depending on the size of Ego, it shows very strong light emission when observed at room temperature, and the light emitting element material (R, G, B ternary color This is a promising product.

By the way, if a film made of such a substance is used as a light emitting layer, L
E D (Light E +mitLing D
1ode), an injection layer is required to inject electrons and holes into the light emitting layer, and it is best to use the above-mentioned amorphous carbon-based materials of semiconductor p-type and n-type as this injection layer. be. However, when using this material as an injection layer, the target characteristics Ego>2eV, ρ
It is very difficult to produce p-type and n-type films having (resistivity)<10@Ω-cx, and this problem hinders the application of the above-mentioned amorphous carbon-based materials to light-emitting devices.

An object of the present invention is to provide a method for manufacturing a light emitting device that can fully bring out the characteristics of an amorphous carbon-based material obtained using a sputtering method.

E1 Means for Solving the Problems The present invention provides a method for manufacturing a light emitting device in which a hole injection layer and an electron injection layer are laminated on both sides of a light emitting layer, respectively. A step of generating a hole injection layer made of a p-type amorphous silicon carbide film by performing a plasma chemical vapor deposition method in which a low-pressure reaction gas containing an impurity gas is caused to glow discharge in a vacuum container and the decomposed gas is polymerized. A voltage is applied in a vacuum container into which hydrogen gas with a gas pressure of 3 to 665 Pa is introduced, and energetic particles of hydrogen gas collide with a first target made of a solid carbon-based material and a second target made of silicon. , a double target type Snoku in which the ratio of the power applied to the second target to the power applied to the first target is 063 to 100%.

A process of generating a light-emitting layer made of an amorphous carbon-based film by performing an evening method, and a process of glow-discharging a low-pressure reaction gas containing hydrocarbon gas, silicon hydride gas, and n-type impurity gas in a vacuum container. The method is characterized by a step of performing a plasma chemical vapor deposition method to polymerize decomposed gas, thereby producing an electron injection layer made of an n-type amorphous silicon carbide film.

In the present invention, the gas introduced into the vacuum container in the step of producing a light emitting layer is a mixed gas of hydrogen gas and helium gas, and the concentration of helium gas is 3 to 90% by volume, and the mixed gas is The pressure may be 3 to 665 Pa.

In addition, the above-mentioned mixed gas is a mixed gas of hydrogen gas and nitrogen gas, and the concentration of nitrogen gas is 0.1 to 20% by volume.
and the mixed gas pressure may be 3 to 665 Pa, or it may be a mixed gas of hydrogen gas, helium gas, and nitrogen gas, where the helium gas concentration is 3 to 80% by volume and the nitrogen gas concentration is 0. The mixed gas pressure may be 1 to 20% by volume and 3 to 665 Pa.

F. Example FIG. 1 is a block diagram showing an example of a light emitting device manufactured by the method of the present invention. In Fig. 1, 1 is a glass substrate with an area of, for example, about 63 cm', 2 is a transparent electrode made of tin oxide, and 3 is a P layer with a thickness of about 30 nm doped with B3°.
type amorphous silicon carbide 111 (hereinafter ra-3i
It is called "C membrane". ), 4 is 300 nm
An amorphous carbon-based film (hereinafter ra-C: Si,
1 (referred to as film-1); 5 is an electron injection layer made of an n-type a-3iC film doped with P'' and having a thickness of about 50 nm; and 6 is an aluminum electrode.

Next, a method for manufacturing the above light emitting device will be explained with reference to FIG. In the figure, 7 is a vacuum container, which consists of three consecutive vacuum chambers 7I to 7. It is divided into. First of all, CHa
A reaction gas prepared by diluting a mixed gas of S + Ha, B, and H by about 10 times with H gas is introduced into the first vacuum chamber 71, and a high frequency voltage is applied to this gas by a high frequency power source E. The decomposition gas generated by glow discharge is polymerized on the substrate 8 on which the electrode is formed, thereby forming a p-type a
-3iC film is obtained. That is, this a-3iC film is subjected to plasma CVD (Chcvicical Vapor Dep.
position) method. Next, without breaking the vacuum state (the substrate 8 on which the a-3iC film has been formed is transferred to the second vacuum chamber 7), H and gas are introduced into this chamber, and a high frequency voltage is applied by high frequency power sources Etm and Ef++. Ih is applied independently to a first target T made of a solid carbon-based material, such as graphite, and a second target T made of silicon placed on the cathode.
We use a sputtering method that collides energy particles of gas,
As a result, an M layer of an a-C:Si,H film is formed on the a-5iC film. After that, without breaking the vacuum state (the substrate 8 on which these films are formed is moved to the third vacuum chamber 7ff,
B, H, P H, gas was used instead of gas.
The n-type a-
A p-1-nffi light emitting device is obtained by obtaining an SfC film and then forming an electrode film on this a-3iC film.

Note that 9 in Figure 2. ~9. is a susceptor rotatably provided by a magnetic seal, A is an anode, 10 to 12 are heaters, E is a high frequency power source, and 13 is a plasma rectifying plate.

Here, three examples (Samples 1 to 3) of manufacturing conditions when manufacturing a light emitting element using the apparatus shown in FIG. 2 are listed below.

(1) Regarding sample 1a Hole injection layer vacuum container gas pressure substrate temperature 200″CCH, gas:
S! Ha gas m166, 7 Pa (0.5To
rr) b Luminescent layer inside vacuum vessel H, gas pressure 100 Pa (0.75 Torr) Substrate temperature 70°C Target diameter c? Gas pressure in vacuum vessel for Ili injection layer Substrate temperature C1] 4 gas: SiH, gas 5u 66,7 Pa (0.5 Torr) 200°C I Pa, gas: (CI-(4 gas + S + H4 gas) 5. 8:1
000 (2) Regarding Sample 2 a Hole injection layer and electron injection layer manufactured under the same conditions as Sample I b Light emitting layer in vacuum container 1' (t Gas pressure 40 Pa, (0,3 To
(3) Regarding sample 3, a Hole injection layer was manufactured under the same conditions as Sample 1, except that rr).b Light emitting layer was manufactured under the same conditions as Sample 1. .3Pa(0,I'rorr
) was manufactured under the same conditions as the sample.
When the relationship with strength was investigated, the relationship shown in FIG. 3 was obtained. The graphs of solid lines ■ to ■ in FIG. 3 correspond to samples 1 to 3, respectively. Also, for each sample 1 to 3, the PL peak wavelength and E
When the relationship with go was investigated, the relationship shown in FIG. 4 was obtained. It was found that all Samples 1 to 3 exhibited sufficient luminescence that could be observed visually, and had sufficient luminescent properties. The forward bias voltage used in the test was 5■, and the current density was 200mA/Gx''.In the above examples, a
As a -3iC film, Ego is 2. Oe V, ρ is 10
6Ω'iff was used, but Ego was 2. If a material with ρ larger than Oev and smaller than 10'Ω·0 degree is used, the light emission characteristics will be further improved. In addition, the substrate temperature is limited by the heat resistance of the a-C:5iSH film, but
-C:Si, H film becomes Ego when heated above 350℃
The temperature is limited to about 300°C because the temperature decreases and the membrane pressure decreases.

By the way, p-type a-3iC film, a-C:Si.

When a pn-type cell is made by stacking an H film and an n-type a-3iC film, the junction between the a-C:Si, H film and aSiC film (p-type or n-type) becomes a heterojunction. Whether the bonding is good or not, that is, holes (
The problem was whether or not the electrons (electrons) were successfully injected, but when the diode characteristics of Samples 1 to 3 were investigated, it was found that the junctions were well formed. The diode characteristics of sample 1 are shown as solid lines IF and JR in FIG. 5, and the diode characteristics of a light emitting device manufactured under the same conditions using only a graphite target are shown as dashed lines 2F and 2F in the same figure.
It is shown as a dotted line 2R.

However, F indicates the voltage-current characteristic when forward biased, and R indicates the voltage-current characteristic when reverse biased. This result shows that the diode characteristics are improved by using a graphite target and a silicon target.

Here, the electric power e applied to the first target T1.

The power e applied to the second target T.

The results shown in FIG. 6 were obtained by examining how the PL peak intensity changes when the ratio (et/e, X I OO) is changed. Furthermore, when we investigated how the resistivity ρ and Ego changed when this power ratio was changed, the results shown in FIG. 7 were obtained. As can be seen from these results, when the power ratio exceeds 100%, the PL intensity decreases significantly, and EgO becomes less than 2 eV, and 0.3%
If it is less than ρ, ρ will be too large and the current density will become small. Therefore, the power ratio described below is preferably 0.3 to 100%.

Further, when we investigated how Ego and ρ change when the pressure of H and gas was changed under the manufacturing conditions of Sample 1, the results shown in FIG. 8 were obtained. As can be seen from this result, when the gas pressure is below 313a, Ego is 2eV.
Below, if it exceeds 665Pa, ρ-to”Ω・cm
As a result, the current density becomes small (which makes it undesirable as a light emitting device. Therefore, the H and gas pressure are 3 to 6
65 Pa is desirable.

In the present invention, the mixed gas used in the step of generating the light emitting layer may be a mixed gas of H gas and He gas,
When this method is carried out using the apparatus shown in FIG.
Second vacuum chamber7. What is necessary is to introduce f-(, gas and He gas to

Next, this method is carried out using the apparatus shown in FIG. 2, and three examples of manufacturing conditions (
Samples 4 to 6) are listed below.

(1) About sample 4 +l Hole injection layer and electron injection layer Manufactured under the same conditions as Sample 1.

b Mixed gas pressure in luminescent layer vacuum container 100Pa (0.75T
orr) He gas concentration in mixed gas: 50% by volume Substrate temperature: 70°C Diameter of each target: 5 m (2) Regarding sample 5 a: Hole injection layer and electron injection layer manufactured under the same conditions as Sample 1b: Luminescent layer in vacuum container Mixed gas pressure 40Pa (0.3Torr)
(3) Regarding sample 6, a Hole injection layer and electron injection layer were manufactured under the same conditions as sample 1.b Light emitting layer was manufactured under the same conditions as sample 4 except that the gas pressure in the vacuum container was 13.3 Pa ( 0,IT
When the relationship between the EL peak wavelength and the El-intensity was investigated for each of the above samples 4 to 6, which were manufactured under the same conditions as sample 4 except that the EL peak wavelength and the El-intensity were changed, the relationship shown in FIG. 3 was obtained. The graphs of solid lines ■ to ■ in FIG. 3 correspond to samples 4 to 6, respectively. Also, for each sample 4 to 6, the PL peak wavelength and Eg
When the relationship with o was investigated, the relationship shown in FIG. 4 was obtained. It was found that all Samples 4 to 6 exhibited sufficient luminescence that could be observed visually, and had sufficient luminescent properties.

Here, under the manufacturing conditions of Sample 1 described above, it was investigated how Ego and the film formation rate change by changing the He gas concentration. The results are shown in FIG. As can be seen from this result, if the He gas concentration is too small, the film formation rate will be quite slow, and if it is too large, Ego will be less than 2e■, which is undesirable, so the He gas concentration is preferably 3 to 90% by volume.

Eg can be obtained by changing the mixed gas pressure during the formation of the light-emitting layer under the above-mentioned manufacturing conditions of sample 1.

and how the film formation rate changes.

The hair was tied as shown in FIG. The white circle marked with a black dot in the center is the film formation rate in the case of only H gas. As can be seen from this result, if the mixed gas pressure is less than 3 Pa, Ego is 2ev, which is undesirable, and if it is more than 665 Pa, the film formation rate becomes very low. Therefore, the mixed gas pressure is preferably 3 to 665 Pa.

In the present invention, the mixed gas used in the process of producing the light emitting layer is H, gas and N! It may be a mixed gas with gas,
When this method is carried out using the apparatus shown in FIG.
Second vacuum chamber7. What is necessary is to introduce H, gas and N, gas.

Next, this method is carried out using the apparatus shown in FIG. 2, and three examples of manufacturing conditions (
Samples 7 to 9) are listed below.

(1) About sample 7 a Hole injection layer and electron injection layer It was manufactured under the same conditions as Sample 1.

b Mixed gas pressure in the luminescent layer vacuum container 100 Pa (0.75
Torr) N in mixed gas, gas concentration 5% by volume Substrate 9°C 70°C High frequency power applied to first target 300 W High frequency power applied to second target 30 W Diameter of each target 75 m (2) For sample 8 a Correct The hole injection layer and electron injection layer were manufactured under the same conditions as sample 1. The mixed gas pressure in the vacuum container was set at 40 Pa (0,3To
(3) Regarding sample 9, a. Hole injection layer and electron injection layer. b. Light emitting layer. Gas pressure in the vacuum container.). 3Pa (0°l Tor
When the relationship between the El-peak wavelength and the EL intensity was investigated for each of the above-mentioned Samples 7 to 9, which were manufactured under the same conditions as Sample 7, except for the parameter r), the relationship shown in FIG. 3 was obtained. The graphs of solid lines ■ to ■ in FIG. 3 correspond to samples 7 to 9, respectively. Also, for each sample 7 to 9, the PL peak wavelength and Eg
When the relationship with o was investigated, the relationship shown in FIG. 4 was obtained. It was found that all Samples 7 to 9 exhibited luminescence that could be sufficiently observed visually, and had sufficient luminescent properties.

Here, under the manufacturing conditions of Sample 7, how the PL peak intensity and the EL peak intensity change by changing the N and gas concentrations was investigated. The results are as shown in Fig. 11, and the vertical axis shows the ratio of the peak intensity (ip) to the PL peak intensity (Ipo) when N and the gas concentration are O, and the ratio (lp) of the peak intensity (ip) at that concentration. /I
po), N, and the ratio of the PL peak intensity (IE) at the current concentration to the EL peak intensity (1, , ) when the gas concentration is O (IE/l no). This result shows that the large PL peak intensity and E
To obtain I7 peak strength, N gas concentration is 0.1
It is desirable that the amount is 1% by volume to 20.

Furthermore, Eg can be improved by changing the mixed gas pressure during the formation of the light-emitting layer under the manufacturing conditions of Sample 7 above.

We investigated how the resistivity and resistivity ρ change.

The results are shown in FIG. As can be seen from this result, when the mixed gas pressure is 3 Pa or less, Ego is 2e■
The pressure of the mixed gas should be between 3 and 665 Pa because it is expected that the resistivity ρ will exceed 10'3Ω・CX and the current density will decrease if it exceeds 665 Pa. desirable.

In the present invention, a mixed gas of IIt gas, I(e gas, and N gas) may be used as the mixed gas in step 1 of generating the light emitting layer. When this method is carried out using the apparatus shown in FIG. For this purpose, 14. gas, He gas, N, and gas may be introduced into the second vacuum chamber 7□.

Next, this method is carried out using the apparatus shown in FIG. 2, and three examples of manufacturing conditions (
Samples 10 to 12) are listed below.

(+) About sample 10 a Hole injection layer and electron injection layer It was manufactured under the same conditions as Sample 1.

b Mixed gas pressure in the luminescent layer vacuum container 1.0OPa (0.7
5 Torr) N in mixed gas, gas concentration 5 volume 1%
Substrate temperature 70'C Diameter of each target 5 JIJ (2) Regarding sample 11 a Hole injection layer and electron injection layer manufactured under the same conditions as sample 1 b Light emitting layer Mixed gas pressure in vacuum vessel 40 Pa (0,3To
(3) was manufactured under the same conditions as sample 10, except that rr) was used.
Regarding sample 12, a hole injection layer and electron injection layer were manufactured under the same conditions as sample 1. b light emitting layer was prepared under the same conditions as sample 1. The gas pressure in the vacuum container was set to 13.3 P a (0, I T
When the relationship between the EL peak wavelength and the El-intensity was investigated for each of the above samples 10 to 12, which were manufactured under the same conditions as sample 10, except for the following conditions, the relationship shown in FIG. 3 was obtained. The graphs of solid lines ■ to ■ in FIG. 3 correspond to samples 10 to 12, respectively. Further, when the relationship between the PL peak wavelength and Ego was investigated for each of samples 10 to 12, the relationship shown in FIG. 4 was obtained.

It was found that all Samples 10 to 12 exhibited sufficient luminescence that could be observed visually, and had sufficient luminescent properties.

Here, under the manufacturing conditions of sample 10 above, by changing the He gas concentration (He/H, +He1N,), Eg
The results shown in FIG. 13 were obtained by examining how the o and film formation rate changed. In this case, the concentration of N and gas (Ntl
o, +N,) is fixed at 5% by volume. As can be seen from this result, if the 1(e) gas concentration is too small, the film formation rate will be slow, and if it is too large, the Ego will be less than 2e, which is undesirable, so the He gas concentration is preferably 3 to 80% by volume.

Furthermore, under the manufacturing conditions of Sample 10, how the PL peak intensity and EL peak intensity changed by changing the N and gas concentrations was investigated. In this case H! The He gas concentration for the mixed gas of gas and He gas is 30
It is fixed at volume %. The results are shown in FIG. 14, and the vertical axis is the same as in FIG. 1+. From this result, in order to obtain large I) L peak intensity and EL peak intensity, N.

The gas concentration is preferably 0.1 to 20% by volume.

Furthermore, under the manufacturing conditions of Sample 1 above, it was investigated how Ego and the film formation rate would change by changing the mixed gas pressure at the time of generating the light emitting layer. The results were the same as those shown in FIG. Therefore, the mixed gas pressure is 3. OPa~
It is desirable that the pressure is 665 Pa.

When the diode characteristics of Samples 4 to 12 were investigated in -1- below, the results were similar to those of Sample 1 described above. Furthermore, the power ratio (e, /e, x 1.00) was changed under each manufacturing condition of sample 4.7.10, and the power ratio and P
When the relationship between L peak intensity, Ego, and resistivity ρ was investigated, the results were similar to those of Sample 1 described above.

G4 Effect of the invention According to the invention, aC:Si obtained by sputtering
, H film or a-Cpsi, H, N film is used as the light-emitting layer, it has a large optical energy gap and has a peak wavelength on the short wavelength side. Since it can be controlled by changing the conditions, a light-emitting layer that meets your needs can be easily obtained. Furthermore, in the step of generating the light emitting layer, the film formation rate is high because He gas is introduced, and the ELSPL intensity is improved because N gas is introduced. Furthermore, by using a solid carbon-based material target and a silicon target, an amorphous film containing 0% Si is obtained, and this is used as the light-emitting layer, so it is possible to obtain good diode characteristics and reduce the resistivity of the device. Can be made smaller. And aS obtained by plasma CVD method
+ Since the C film is used as the hole and electron injection layer, even if the light emitting layer and the injection layer are connected by a heterojunction, electrons and holes can be successfully injected into the light emitting layer, and the optical energy gap can be reduced. and resistivity [1] Since an injection layer that satisfies standard characteristics can be easily created, a-〇:Si.

1 ■ Membrane (or a-C: Si,,+(,,N membrane)
That is, the characteristics of the light-emitting layer can be fully brought out, and a light-emitting element with high practical value can be obtained.

[Brief explanation of drawings]

FIG. 1 is a configuration diagram showing a light emitting element according to an embodiment of the present invention,
Fig. 2 is a block diagram showing a manufacturing apparatus for a light emitting element, Fig. 3 is a characteristic diagram showing the light emitting characteristics of a diode, Fig. 4 is a characteristic diagram showing the relationship between Eo and PL of an amorphous carbon film, and Fig. 5 is a graph showing diode characteristics, Figure 6 is a measurement result diagram showing the dependence of power ratio on P f and peak intensity, and Figure 7 is a graph showing diode characteristics.
The figure is a measurement result diagram showing the dependence of the power ratio on the resistivity ρ and Ego.
Figures 9 and 13 are measurement result diagrams showing the dependence of He gas concentration on Ego and film formation rate, and Figure 1.0 is a measurement result diagram showing the dependence of He gas concentration on Eg. A measurement result diagram showing the dependence of gas pressure on film formation rate.
FIGS. 11 and 14 are measurement results diagrams showing the dependence of PL and EL peak intensities on N and gas concentrations. DESCRIPTION OF SYMBOLS 1... Substrate, 2,6... Electrode, 3... Hole injection layer, 4... Light emitting layer, 5... Electron injection layer, 7... Vacuum container, 7°~73. ...Vacuum chamber, 8...Substrate, 91-
9. ...Susceptor, T1, T, ...Target. Fig. 4 Diagram of the relationship between EO and PL at the Amorphous Carbon Prefectural Exhibition Ego (
eV) Figure 6 Measurement results of power ratio dependence on PL peak intensity National power ratio (e2/e+
x/e+ Figure 11: Measurement results of dependence of PL and EL peak intensity on N2 gas concentration N2 gas concentration < N2 / H2+ Nz) (volume %) Figure 14

Claims (4)

[Claims] (1) In a method for manufacturing a light emitting device in which a hole injection layer and an electron injection layer are laminated on both sides of a light emitting layer, a low pressure reaction gas containing a hydrocarbon gas, a silicon hydride gas and a p-type impurity gas is used. A process of performing a plasma chemical vapor deposition method in which decomposed gas is polymerized by glow discharge in a vacuum container to generate a hole injection layer made of a p-type amorphous silicon carbide film, and a process of hydrogen at a gas pressure of 3 to 665 Pa. A voltage is applied in the vacuum container into which the gas has been introduced, causing energetic particles of hydrogen gas to collide with a first target made of a solid carbon-based material and a second target made of silicon, and the electric power applied to the first target A step of performing a double-target sputtering method in which the ratio of the power applied to the second target to the second target is 0.3 to 100%, thereby producing a light-emitting layer made of an amorphous carbon-based film, A plasma chemical vapor deposition method is performed in which a low-pressure reaction gas containing silicon oxide gas and an n-type impurity gas is glow-discharged in a vacuum container to polymerize the decomposed gas, thereby forming an electron injection layer made of an n-type amorphous silicon carbide film. 1. A method for manufacturing a light emitting device, comprising the steps of: (2) In the process of generating the light emitting layer, the gas introduced into the vacuum container is a mixed gas of hydrogen gas and helium gas, and the concentration of helium gas is 3 to 90% by volume, and the mixed gas pressure is Claim (1): 3 to 665 Pa
A method for manufacturing the light emitting device described above. (3) In the step of producing a light-emitting layer, the gas introduced into the vacuum container is a mixed gas of hydrogen gas and nitrogen gas, and the concentration of nitrogen gas is 0.1 to 20% by volume, and the mixed gas The method for manufacturing a light emitting device according to claim 1, wherein the pressure is 3 to 665 Pa. (4) In the step of generating the light emitting layer, the gas introduced into the vacuum container is a mixed gas of hydrogen gas, helium gas, and nitrogen gas, and the helium gas concentration in this mixed gas is 3 to 80% by volume. , nitrogen gas concentration is 0.1-20
The method for manufacturing a light emitting device according to claim 1, wherein the volume % and the mixed gas pressure are 3 to 665 Pa.