JPH02105881A - Composition for insulating substrate for sandwiching liquid crystal, substrate for sandwiching liquid crystal, production of the same substrate, and liquid crystal display element - Google Patents

Composition for insulating substrate for sandwiching liquid crystal, substrate for sandwiching liquid crystal, production of the same substrate, and liquid crystal display element

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Publication number
JPH02105881A
JPH02105881A JP25794988A JP25794988A JPH02105881A JP H02105881 A JPH02105881 A JP H02105881A JP 25794988 A JP25794988 A JP 25794988A JP 25794988 A JP25794988 A JP 25794988A JP H02105881 A JPH02105881 A JP H02105881A
Authority
JP
Japan
Prior art keywords
liquid crystal
substrate
composition
holding substrate
sandwiching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25794988A
Other languages
Japanese (ja)
Inventor
Shunichiro Uchimura
内村 俊一郎
Hiroyuki Morishima
森嶋 浩之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP25794988A priority Critical patent/JPH02105881A/en
Publication of JPH02105881A publication Critical patent/JPH02105881A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To make it possible to form a composition for an insulating substrate for sandwiching a liquid crystal, which can form an excellent insulating protective film for a transparent electrode when cured and which can be cured by heat treatment at low temperatures, by dissolving a specified hydroxy-terminated ladder polysiloxane and a specified organometallic compound in a solvent. CONSTITUTION:This composition comprises hydroxy-terminated ladder polysiloxane (a) of formula I (wherein R1 and R2 are each a hydrogen atom or a monovalent hydrocarbon group; and n is a positive integer), an organometallic compound (b) of the general formula: M(OR')m (wherein M is a metallic element; R' is a hydrogen atom or a monovalent hydrocarbon group; and m is a positive integer) and a solvent (c). Component (a) is preferably one having a number-average MW in the range of 1000-500000 and contained in an amount of 5-20wt.% in the composition. Examples of component (b) include Si(OR')4, Ti(OR')4, Zr(OR')4, Ta(OR')5 and In(OR')3 and when they are used chiefly as crosslinking agents, they are added in an amount of 10-100mol% based on the hydroxyl concentration of component (a).

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、液晶表示素子の上下基板間導通による表示不
良を改善する液晶挟持基板を生成する液晶挟持基板絶縁
用組成物、これを用い九液晶挟持基板、その製造法およ
び液晶表示素子に関する。
Detailed Description of the Invention (Industrial Application Field) The present invention relates to a liquid crystal sandwiching substrate insulating composition for producing a liquid crystal sandwiching substrate that improves display defects caused by conduction between the upper and lower substrates of a liquid crystal display element, and The present invention relates to a liquid crystal sandwiching substrate, a method for manufacturing the same, and a liquid crystal display element.

(従来の技術) 従来、液晶表示素子の製造に際しては、パターニングさ
れた透明電極を有する基板に、ポリイミド等の有機高分
子からなる配向膜を塗布形成し。
(Prior Art) Conventionally, when manufacturing a liquid crystal display element, an alignment film made of an organic polymer such as polyimide is coated on a substrate having a patterned transparent electrode.

配向処理を行なった後、素子を組み立てる方法が用いら
れていた。しかし、近年、液晶表示素子の大型化に伴い
、配向膜のピンホールや素子のギャップ中に混入した異
物が、配向膜をキズつけたシ。
A method has been used in which the device is assembled after alignment treatment. However, in recent years, as liquid crystal display elements have become larger, foreign matter that has entered pinholes in the alignment film or gaps between the elements has caused damage to the alignment film.

つき破ることによって起こる上下基板間の導通による表
示不良が問題となっている。
Display defects due to conduction between the upper and lower substrates caused by puncturing have become a problem.

最近では、これを解決する手段として、透明電極と配向
膜の間に絶縁性の層を形成する方法が検討され2例えば
、(1)スパッタリングによる低温で酸化膜を形成する
方法、(2)アルコキシシラン、アルコキシチタンおよ
び増粘剤として有機高分子を含む溶液を印刷法等で塗布
した後、熱処理して酸化膜とする方法等が採用されてい
る。
Recently, as a means to solve this problem, methods of forming an insulating layer between the transparent electrode and the alignment film have been studied.2For example, (1) forming an oxide film at low temperature by sputtering, (2) A method has been adopted in which a solution containing silane, alkoxytitanium, and an organic polymer as a thickener is applied by a printing method, and then heat-treated to form an oxide film.

しかしながら、(1)の方法では、真空系の高価な装置
が必要であり、バッチ処理のため生産性が悪く、また(
2)の方法では、酸化膜とするために高温処理が必要で
あり、この高温処理によって透明電極のシート抵抗値が
上昇してしまう等の欠点があった。
However, method (1) requires expensive vacuum equipment, has poor productivity due to batch processing, and (
Method 2) requires high-temperature treatment to form an oxide film, and this high-temperature treatment has drawbacks such as an increase in the sheet resistance of the transparent electrode.

(発明が解決しようとする課題) 本発明は、前記従来技術の欠点を解決し、印刷法等で塗
布した後、透明電極のシート抵抗値が上昇しないような
低温の熱処理で硬化して絶縁性に優れた保護被膜を形成
する液晶挟持基板絶縁用組成物、これを用いた液晶挾持
基板、その製造法および液晶表示素子を提供するもので
ある。
(Problems to be Solved by the Invention) The present invention solves the above-mentioned drawbacks of the prior art, and after coating by a printing method or the like, it is cured by heat treatment at a low temperature that does not increase the sheet resistance value of the transparent electrode, and becomes insulating. The present invention provides a composition for insulating a liquid crystal holding substrate that forms a protective film with excellent properties, a liquid crystal holding substrate using the same, a method for manufacturing the same, and a liquid crystal display element.

(課題を解決するための手段) 本発明者らは、鋭意検討した結果、#定の末端ヒドロキ
シラダーポリシロキサンおよび特定の有機金属化合物を
溶剤に溶解させた組成物が、低温の熱処理で硬化する優
れた透明電極の絶縁保護被膜を形成することを見出し2
本発明に到達した。
(Means for Solving the Problems) As a result of intensive studies, the present inventors have found that a composition in which #-terminated hydroxyl ladder polysiloxane and a specific organometallic compound are dissolved in a solvent is cured by low-temperature heat treatment. Found that it forms an excellent insulating protective film for transparent electrodes 2
We have arrived at the present invention.

すなわち1本発明は、(a)一般式 (式中、几!および山は水素または一価炭化水素基9m
は正の整数を表す)で示される末端ヒドロキシラダーポ
リシロキサン、(b)一般式%式%() (式中1Mは金属元素、R′は水素または一価炭化水素
基9mは正の整数を表す)で示される有機金属化合物お
よび(C)溶媒を含有してなる液晶挾持基板絶縁用組成
物、この絶縁用組成物を周込た液晶挾持基板、この液晶
挾持基板の製造法およびこの液晶挟持基板を用いた液晶
表示素子に関する。
That is, 1 the present invention is based on (a) the general formula (where 几! and mount are hydrogen or a monovalent hydrocarbon group 9m
is a positive integer), (b) general formula % formula % () (in the formula, 1M is a metal element, R' is hydrogen or a monovalent hydrocarbon group 9m is a positive integer) A composition for insulating a liquid crystal holding substrate containing an organometallic compound represented by the following formula and (C) a solvent, a liquid crystal holding substrate containing this insulating composition, a method for manufacturing the liquid crystal holding substrate, and a liquid crystal holding substrate. The present invention relates to a liquid crystal display device using a substrate.

本発明の液晶挾持基板に用いられる前記一般式(1)で
示される末端ヒドロキシラダーポリシロキサンは1例え
ば特公昭58−50657号公報に示されているように
フェニルトリクロロシランを。
The terminal hydroxy ladder polysiloxane represented by the general formula (1) used in the liquid crystal holding substrate of the present invention is, for example, phenyltrichlorosilane as shown in Japanese Patent Publication No. 58-50657.

多量の水を用いて加水分解した後、得られた加水分解物
をトルエン中でカルボジイミド類を触媒として脱水縮重
合させて得られる。この場合は前記一般式(1)中の几
1および馬がフェニル基の場合であるが1本発明におい
てはこれ以外にメチル基、エチル基等のアルキル基、ク
ロルフェニル基等のアリル基などの一価炭化水素基およ
び水素とすることができ、これらは分子中に1s″1九
は2稽以上を含むことができる。またこれらの末端ヒド
ロキシラダーポリシロキサンを混合して用いることもで
きる。
After hydrolysis using a large amount of water, the resulting hydrolyzate is subjected to dehydration condensation polymerization in toluene using carbodiimides as a catalyst. In this case, 几 1 and uma in the general formula (1) are phenyl groups, but in the present invention, in addition to these, alkyl groups such as methyl group and ethyl group, allyl groups such as chlorophenyl group, etc. It can be a monovalent hydrocarbon group and hydrogen, and these can contain 2 or more 1s'' in the molecule. These terminal hydroxyl ladder polysiloxanes can also be used as a mixture.

末端ヒドロキシラダーポリシロキサンの数平均分子量は
、塗布液としての粘度、硬化性等の点から1,000〜
500,000の範囲が好ましく、よシ好ましくはス0
00〜s o、 o o oの範囲とされる。また末端
ヒドロキシラダーポリシロキサンの濃度は、その分子量
および塗布膜厚によっても異なるが、液晶挟持基板絶縁
用組成物に対して5〜20重量−が好ましい。
The number average molecular weight of the terminal hydroxyl ladder polysiloxane is from 1,000 to 1,000 in terms of viscosity and curability as a coating liquid.
A range of 500,000 is preferred, more preferably a range of 0.
The range is from 00 to so, o o o. Although the concentration of the terminal hydroxyl ladder polysiloxane varies depending on its molecular weight and coating film thickness, it is preferably 5 to 20% by weight based on the composition for insulating liquid crystal sandwiching substrates.

本発明に用いられる前記一般式(II)で示される有機
金属化合物とシテlfi、  Sj (OR’)41 
 Ti (OR’)4 *Zr(Q几’)41 Ta(
OR’)s* In(OR’)s等の化合物があシ、具
体的にはテトライソプロポキシチタン。
The organometallic compound represented by the general formula (II) used in the present invention and the organometallic compound used in the present invention, Sj (OR')41
Ti (OR')4 *Zr(Q几')41 Ta(
OR')s* Compounds such as In(OR')s, specifically tetraisopropoxytitanium.

テトラブトキシジルコニウム、テトラエトキシジルコニ
ウム、ペンタエトキシタンタル、トリプトキシインジウ
ム等が挙げられる。これらの化合物は、前記末端ヒドロ
キシラダーボリシロキサンノ末端水酸基と反応してSi
−0−Mなる結合を形成し、低温で架橋剤としての作用
を有する。またその添加量によって、形成される保護被
膜の屈折率を制御し、透明電極パターンが点灯していな
い状態で透けて見えるいわゆるネサ黒等の現象を防ぐこ
とができる。これらの有機金属化合物の添加量は、主に
架橋剤として用いる場合には、末端ヒドロキシラダーポ
リシロキサンのヒドロキシル基濃度に対し10〜100
モル係が好ましく、また屈折率の制御を主目的とする場
合には、チタン、ジルコニウム等の有機金属化合物を用
い、Si原子に対して金属原子として10〜100モル
チとするのが好ましい。
Examples include tetrabutoxyzirconium, tetraethoxyzirconium, pentaethoxytantalum, triptoxyindium, and the like. These compounds react with the terminal hydroxyl ladder polysiloxane terminal hydroxyl group to form Si.
It forms a -0-M bond and acts as a crosslinking agent at low temperatures. Further, depending on the amount added, the refractive index of the protective film to be formed can be controlled, and phenomena such as so-called Nesa black, in which the transparent electrode pattern is visible when not lit, can be prevented. When used mainly as a crosslinking agent, the amount of these organometallic compounds added is 10 to 100% relative to the hydroxyl group concentration of the terminal hydroxyl ladder polysiloxane.
A molar ratio is preferable, and when the main purpose is to control the refractive index, it is preferable to use an organometallic compound such as titanium or zirconium, and set the ratio of metal atoms to Si atoms to be 10 to 100 molar.

本発明の液晶挟持基板絶縁用組成物は、前記の末端ヒド
ロキシラダーポリシロキサンを室温またはそれ以上の温
度で溶媒に溶解した後、所定量の前記の有機金属化合物
を添加し、攪拌溶解することによって得られる。この際
の溶媒としてはI NlN−ジメチルアセトアミド、N
−メチル−2−ピロリドン、ブナルセロソルプ、ヘキシ
レングリコール、ブチルセロソルブアセテート等が用い
られる。
The insulating composition for liquid crystal sandwiching substrates of the present invention can be obtained by dissolving the above-mentioned terminal hydroxy ladder polysiloxane in a solvent at room temperature or higher temperature, then adding a predetermined amount of the above-mentioned organometallic compound, and dissolving with stirring. can get. The solvent used in this case is I NlN-dimethylacetamide, N
-Methyl-2-pyrrolidone, bunal cellosolve, hexylene glycol, butyl cellosolve acetate, etc. are used.

本発明の液晶挾持基板は、透明電極のパターンが形成さ
れた基板上に前記の絶縁用組成物を、ロールコータ等の
印刷機、スピナー塗布機などによって塗布し、100〜
300℃、好ましくは150〜250℃のオープン、ホ
ットプレート等で熱処理して透明電極の絶縁保護被膜を
形成した後、この上に公知の方法によって配向膜を形成
することKよって得られる。
The liquid crystal holding substrate of the present invention is produced by applying the above-mentioned insulating composition onto a substrate on which a pattern of transparent electrodes is formed using a printing machine such as a roll coater, a spinner coating machine, etc.
It is obtained by forming an insulating protective film of a transparent electrode by heat treatment at 300° C., preferably 150 to 250° C., on an open or hot plate, and then forming an alignment film thereon by a known method.

前記の絶縁保護被膜の熱処理時間は、オーブンの場合は
30〜90分、ホットグレートの場合は10〜30分程
度が好ましい。
The heat treatment time for the above-mentioned insulating protective film is preferably about 30 to 90 minutes in the case of an oven, and about 10 to 30 minutes in the case of a hot grate.

また、形成される絶縁保護被膜の膜厚は絶縁耐圧の点か
ら500〜2000Aが好ましい。
Further, the thickness of the insulating protective film to be formed is preferably 500 to 2000 A from the viewpoint of dielectric strength.

本発明になる液晶挾持基板は、公知の方法により配向膜
のラビングを行った後、ギャップ材を分散したシール材
ではり合わせ、液晶を注入、封止して液晶表示素子とさ
れる。
The liquid crystal holding substrate of the present invention is made into a liquid crystal display element by rubbing the alignment film using a known method, then bonding the substrates with a sealing material in which a gap material is dispersed, and injecting and sealing the liquid crystal.

(実施例) 以下9本発明を実施例により説明する。(Example) The present invention will be explained below with reference to nine examples.

実施例I A)末端ヒドロキシラダーポリシロキサンの合成フェニ
ルトリクロロシラン(CgHsSiC1!s )105
.89(0,5モル)をジエチルエーテル200 m/
に溶解した。一方21の四ツロフラスコにイオン交換水
11!を入れ、攪拌機、冷却器、温度計を取りつけ、水
浴で20℃以下に冷却し、このフラスコ中に上記フェニ
ルトリクロロシランのエーテル溶液を滴下ロートより滴
下し加水分解を行った。反応温度は20℃以下とし、4
時間で滴下を終了した。攪拌を止め、二層に分離した反
応液を分液ロートに入れエーテル層を取り出した。エー
テル層は、イオン交換水で中性になるまで洗浄した後。
Example I A) Synthesis of terminal hydroxyl ladder polysiloxane Phenyltrichlorosilane (CgHsSiC1!s) 105
.. 89 (0.5 mol) in diethyl ether 200 m/
dissolved in On the other hand, 11 ion-exchanged water in 21 Yotsuro flasks! A stirrer, a cooler, and a thermometer were attached to the flask, and the flask was cooled to below 20°C in a water bath.The ether solution of phenyltrichlorosilane was added dropwise into the flask from the dropping funnel to perform hydrolysis. The reaction temperature is 20℃ or less, and
The dripping was completed in an hour. Stirring was stopped, the reaction solution separated into two layers was put into a separating funnel, and the ether layer was taken out. After washing the ether layer with deionized water until it becomes neutral.

無水硫酸す) IJウムによυ−昼戎乾燥した。その後
エーテルを除去し、減圧乾燥器に入れ60℃で2時間乾
燥した。得られた白色の粉末aI工几ペクトルで350
0cm−1に一〇Hの吸収、1130゜1135cm−
IK8i −o−8iの吸収を示した。その数平均分子
量は約1.000であった。
The mixture was dried with anhydrous sulfuric acid (IJum) for 1 day. Thereafter, the ether was removed, and the mixture was placed in a vacuum dryer and dried at 60° C. for 2 hours. 350 in the obtained white powder aI process spectrum.
Absorption of 10H at 0cm-1, 1130°1135cm-
The absorption of IK8i-o-8i was shown. Its number average molecular weight was about 1.000.

次に前記白色の粉末の加水分解物を還流冷却管攪拌機お
よび温度計を付けた三ツロフラスコに109秤量し、溶
媒としてトルエン30 mI!を入れて溶解し、均一層
とした。これに縮合触媒としてジシクロへキシルカルボ
ジイミドttgを入れて溶解し、110℃で攪拌還流下
で2時間反応させた。反応後2反応容器中に尿素誘導体
の析出が認められた。反応終了後1反応混合物を放冷し
Next, the white powder hydrolyzate was weighed into a three-meter flask equipped with a reflux condenser stirrer and a thermometer, and 30 mI of toluene was added as a solvent. was added and dissolved to form a uniform layer. Dicyclohexylcarbodiimide ttg was added as a condensation catalyst and dissolved therein, and the mixture was reacted at 110° C. under stirring and reflux for 2 hours. After the reaction, precipitation of urea derivatives was observed in the two reaction vessels. After the reaction was completed, the reaction mixture was allowed to cool.

尿素誘導体を吸引濾過し、10体積倍のメタノール中に
注いでポリマーを析出させた後、濾別し。
The urea derivative was suction filtered, poured into 10 times the volume of methanol to precipitate the polymer, and then filtered.

減圧乾燥した。得られたポリマーの数平均分子量は50
. OOOであり、−1またそのエルスペクトルには3
500cm−”に−〇Hによる吸収が見られ、末端ヒド
ロキシポリフェニルラダーポリシロキサンであることを
確認した。
Dry under reduced pressure. The number average molecular weight of the obtained polymer was 50
.. OOO, -1 and its El spectrum has 3
Absorption due to -○H was observed at 500 cm-'', confirming that it was a terminal hydroxy polyphenyl ladder polysiloxane.

B) 液晶挾持基板絶縁用組成物の作製上記で得られた
末端ヒドロキシポリフェニルラダーシロキサン5gを、
還流冷却管、攪拌機、温度計および滴下ロートを付けた
四ツロフラスコに秤量し、溶媒としてN、N−ジメチル
アセトアミド60G、!:ヘキシレングリコール30g
を加え攪拌溶解した。次にテトライソプロポキシチタン
の10重量%イソプロピルアルコール溶液5gを滴下ロ
ートから攪拌下に滴下したのち、室温で約2時間攪拌混
合し、液晶挟持基板絶縁用組成物を得た。
B) Preparation of composition for insulating liquid crystal holding substrate 5 g of the terminal hydroxy polyphenyl ladder siloxane obtained above was
Weighed into a four-way flask equipped with a reflux condenser, stirrer, thermometer and dropping funnel, added 60G of N,N-dimethylacetamide as the solvent! :Hexylene glycol 30g
was added and stirred to dissolve. Next, 5 g of a 10% by weight isopropyl alcohol solution of tetraisopropoxytitanium was added dropwise from the dropping funnel with stirring, and the mixture was stirred and mixed at room temperature for about 2 hours to obtain a composition for insulating a liquid crystal sandwiching substrate.

得られた組成物の濃度は5.1重量%(200℃/2h
r乾燥)であり、25℃における粘度は40センチボイ
ズであった。
The concentration of the obtained composition was 5.1% by weight (200°C/2h
(dry), and the viscosity at 25° C. was 40 centivoise.

得られた組成物をスピンナを用いてシリコンウェーハ上
に塗布し、150℃で1時間の熱処理をし、さらに30
0℃で1時間の熱処理を行い、厚さzoooAの被膜を
形成した。該被膜に2mm。
The obtained composition was applied onto a silicon wafer using a spinner, heat treated at 150°C for 1 hour, and then heated for 30°C.
Heat treatment was performed at 0° C. for 1 hour to form a film with a thickness of zoooA. 2 mm to the coating.

Al!電極を蒸着し、絶縁破壊電圧を測定したところ、
約1oovの耐圧を示した。
Al! When electrodes were deposited and the dielectric breakdown voltage was measured,
It showed a withstand pressure of about 1oov.

C)液晶挟持基板の作製と評価 640X200ドツトの透明電極パターンを形成した3
00X150mmのガラス基板上に上記組成物を印刷法
で塗布した後、上記と同様の熱処理を行い、厚さ100
0^の絶縁保護被膜を形成した。
C) Preparation and evaluation of liquid crystal sandwiching substrate 3 A transparent electrode pattern of 640 x 200 dots was formed.
After applying the above composition on a glass substrate of 0.00 x 150 mm by printing method, heat treatment similar to that described above was performed, and a thickness of 100 mm was applied.
An insulating protective film of 0^ was formed.

次に該被膜上に同じく印刷法でポリイミド系配向膜材料
(日立化成工業■裂開品名LQ−1800)を塗布し、
150℃で1時間熱処理し、さらK。
Next, a polyimide alignment film material (Hitachi Chemical Co., Ltd. splitting product name LQ-1800) was applied on the film using the same printing method.
Heat treated at 150°C for 1 hour and then further heated.

300℃で1時間の熱処理を行って約800大の配向膜
を形成し、液晶挟持基板を得た。
A heat treatment was performed at 300° C. for 1 hour to form an alignment film of approximately 800 mm, thereby obtaining a liquid crystal sandwiching substrate.

こうして得られた液晶挟持基板を公知の方法でラビング
し、210°ツイストする様にエポキシ系シール剤EN
−1000(日立化成工業■製)で#′i、9合わせ、
液晶ZLI−1132(メルク社製)を封入して液晶表
示セルを作製し、直流1!源を用いて電圧印加しその時
の配向状態を目視で観察した。その結果、上下基板の導
通による配向不良およびネサ黒は見られなかった。また
直流電源側で駆動電圧を測定したところ透明電極の抵抗
上昇に起因する駆動電圧の上昇もなかった。
The thus obtained liquid crystal sandwiching substrate was rubbed using a known method, and the epoxy sealant EN was applied so that it was twisted by 210 degrees.
-1000 (made by Hitachi Chemical ■) with #'i, 9 combination,
A liquid crystal display cell was prepared by enclosing a liquid crystal ZLI-1132 (manufactured by Merck & Co.), and a DC 1! A voltage was applied using a source, and the orientation state at that time was visually observed. As a result, no alignment defects or Nesa black due to conduction between the upper and lower substrates were observed. Furthermore, when the driving voltage was measured on the DC power source side, there was no increase in the driving voltage due to an increase in the resistance of the transparent electrode.

実施例2 側鎖にメチル基とフェニル基を2対1の割合で有する末
端ヒドロキシポリラダーシロキサンG几−100(オー
エンスイリノイズ社裂)t−、実施例1と同様のフラス
コ中に109秤量し、溶媒としてN−メチル−2−ピロ
リドン559とブチルセロソルブ30gを加え攪拌溶解
した。さらに。
Example 2 Terminated hydroxypolyladder siloxane G-100 (Owens Illinois Co., Ltd.) having methyl groups and phenyl groups in the side chains in a ratio of 2:1 was weighed in a flask similar to Example 1. 559 N-methyl-2-pyrrolidone and 30 g of butyl cellosolve were added as a solvent and dissolved with stirring. moreover.

テトラブトキシジルコニウムの5重量%ブチルセロンル
プ溶液5gを滴下ロートから攪拌下に滴下した後、室温
で約2時間攪拌混合して液晶挟持基板絶縁用組成物を得
た。得られた組成物の濃度は9.8重量%、粘度は20
センチボイズであった。
After dropping 5 g of a 5% by weight solution of tetrabutoxyzirconium in butyl selon from the dropping funnel while stirring, the mixture was stirred and mixed at room temperature for about 2 hours to obtain a composition for insulating a liquid crystal sandwiching substrate. The concentration of the resulting composition was 9.8% by weight, and the viscosity was 20%.
It was centiboise.

この組成物を用いて得た絶縁保護被膜の絶縁耐圧を実施
例I B)と同様にして評価したところ45V/100
0Xであった。
The dielectric strength voltage of the insulating protective film obtained using this composition was evaluated in the same manner as in Example IB) and was found to be 45V/100.
It was 0X.

また、こうして得られた保護被膜形成絶縁用組成物を実
施例I  C)と同様のガラス基板上に印刷法で塗布し
た後、150℃1時間ついで250℃/1時間の熱処理
を行員、厚さ1000大の絶縁保護被膜を形成し、さら
に、該被膜上に日立化成工業■裂開品名LQ−1800
を用いて約5001のポリイミド系配向膜を形成して液
晶挾持基板を作製し九。
In addition, the protective film-forming insulating composition thus obtained was coated by a printing method on a glass substrate similar to that in Example IC), and then heat-treated at 150°C for 1 hour and then at 250°C for 1 hour to determine the thickness. A 1000-sized insulating protective film is formed, and furthermore, on the film, Hitachi Chemical Co., Ltd.
A polyimide-based alignment film of approximately 5001 was formed using the same method to prepare a liquid crystal holding substrate.

こうして得られた液晶挾持基板を用いて実施例1と同様
にして液晶表示セルを作製し、を圧印加持の配向状態を
観察した結果、導通不良、ネサ黒。
A liquid crystal display cell was produced in the same manner as in Example 1 using the liquid crystal holding substrate obtained in this way, and the alignment state under pressure was observed. As a result, conductivity was poor and Nesa black was observed.

駆動電圧の変化ともなく良好であった。The results were good with no change in driving voltage.

(発明の効果) 本発明の液晶挾持基板絶縁用組成物は、透明電極の絶縁
保護被膜を塗布法と低温での硬化処理で形成することが
でき、これを用いて得られる液晶挾持基板は安価でかつ
低抵抗でネサ黒がないという長所を有し、これによって
上下基板の導通不良のない高品質の液晶表示素子を低コ
ストで製造することができる。
(Effects of the Invention) The composition for insulating a liquid crystal holding substrate of the present invention can form an insulating protective film for a transparent electrode by a coating method and a curing treatment at a low temperature, and the liquid crystal holding substrate obtained using the composition is inexpensive. It has the advantages of high resistance, low resistance, and no blackness, which makes it possible to manufacture high-quality liquid crystal display elements with no conduction defects between the upper and lower substrates at low cost.

Claims (4)

【特許請求の範囲】[Claims] 1.(a)一般式 ▲数式、化学式、表等があります▼( I ) (式中,R_1およびR_2は水素または一価炭化水素
基,nは正の整数を表す)で示される末端ヒドロキシラ
ダーポリシロキサン, (b)一般式 M(OR′)_m(II) (式中,Mは金属元素,R′は水素または一価炭化水素
基,mは正の整数を表す)で示される有機金属化合物お
よび (c)溶媒 を含有してなる液晶挾持基板絶縁用組成物。
1. (a) General formula ▲ Numerical formulas, chemical formulas, tables, etc. ▼ (I) (In the formula, R_1 and R_2 are hydrogen or monovalent hydrocarbon groups, and n represents a positive integer) Terminal hydroxy ladder polysiloxane , (b) an organometallic compound represented by the general formula M(OR')_m(II) (wherein M is a metal element, R' is hydrogen or a monovalent hydrocarbon group, and m is a positive integer); and (c) A composition for insulating a liquid crystal holding substrate containing a solvent.
2.透明電極を有する基板上の請求項1記載の液晶挾持
基板用組成物の硬化膜の上に配向膜を形成した液晶挾持
基板。
2. A liquid crystal holding substrate comprising an alignment film formed on a cured film of the liquid crystal holding substrate composition according to claim 1 on a substrate having a transparent electrode.
3.透明電極を有する基板上に,請求項1記載の液晶挾
持基板用組成物を塗布硬化し,その上に配向膜を形成す
ることを特徴とする液晶挾持基板の製造法。
3. A method for manufacturing a liquid crystal holding substrate, comprising applying and curing the composition for a liquid crystal holding substrate according to claim 1 on a substrate having a transparent electrode, and forming an alignment film thereon.
4.請求項2記載の液晶挾持基板を用いた液晶表示素子
4. A liquid crystal display element using the liquid crystal holding substrate according to claim 2.
JP25794988A 1988-10-13 1988-10-13 Composition for insulating substrate for sandwiching liquid crystal, substrate for sandwiching liquid crystal, production of the same substrate, and liquid crystal display element Pending JPH02105881A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25794988A JPH02105881A (en) 1988-10-13 1988-10-13 Composition for insulating substrate for sandwiching liquid crystal, substrate for sandwiching liquid crystal, production of the same substrate, and liquid crystal display element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25794988A JPH02105881A (en) 1988-10-13 1988-10-13 Composition for insulating substrate for sandwiching liquid crystal, substrate for sandwiching liquid crystal, production of the same substrate, and liquid crystal display element

Publications (1)

Publication Number Publication Date
JPH02105881A true JPH02105881A (en) 1990-04-18

Family

ID=17313455

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25794988A Pending JPH02105881A (en) 1988-10-13 1988-10-13 Composition for insulating substrate for sandwiching liquid crystal, substrate for sandwiching liquid crystal, production of the same substrate, and liquid crystal display element

Country Status (1)

Country Link
JP (1) JPH02105881A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0463883A (en) * 1990-07-03 1992-02-28 Mitsubishi Electric Corp Coating solution composition containing silicone ladder resin

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0463883A (en) * 1990-07-03 1992-02-28 Mitsubishi Electric Corp Coating solution composition containing silicone ladder resin

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