JPH02105615A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPH02105615A
JPH02105615A JP63258707A JP25870788A JPH02105615A JP H02105615 A JPH02105615 A JP H02105615A JP 63258707 A JP63258707 A JP 63258707A JP 25870788 A JP25870788 A JP 25870788A JP H02105615 A JPH02105615 A JP H02105615A
Authority
JP
Japan
Prior art keywords
output
circuit
flip
semiconductor integrated
oscillator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63258707A
Other languages
Japanese (ja)
Inventor
Yoshiyuki Tomota
友田 嘉幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP63258707A priority Critical patent/JPH02105615A/en
Publication of JPH02105615A publication Critical patent/JPH02105615A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To control a rise time and a fall time and to suppress the generation of overshoot and undershoot by sampling an output signal by a shift register and an oscillator, and driving an output circuit by a sampling signal. CONSTITUTION:Sampling is performed by applying a signal from a terminal A and by using the shift register 3 and the oscillator 2. The title circuit is controlled by switching the output circuit 1 sequentially by a sampled input signal, and controlling the peak value of a transient current that flows at the time of switching by controlling the frequency of the oscillator 2. In such a way, the rise time and the fall time can be controlled and furthermore, fast driving capacity can be obtained.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体集積回路に関し、特に直列接続されたP
チャネルMoSトランジスタとNチャネルMOSトラン
ジスタから成る複数の出力回路を有する半導体集積回路
に関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to semiconductor integrated circuits, and in particular, to semiconductor integrated circuits connected in series.
The present invention relates to a semiconductor integrated circuit having a plurality of output circuits consisting of channel MoS transistors and N-channel MOS transistors.

〔従来の技術〕[Conventional technology]

従来、この種の半導体集積回路は、第3図に示すように
、立上り立下りの速いPチャネル型のMOSトランジス
タQP2とNチャネル型のMOSトランジスタQN2を
直列接続した出力回路11を複数並列に接続して、高速
駆動を行うか、第4図に示すように、立上り立下りの遅
いPチャネル型のMOSトランジスタQptとNチャネ
ル型のMOSトランジスタQstを直列接続した出力回
路1を複数並列に接続し、それぞれの出力回路1のゲー
ト入力は所定の遅延量を有する遅延ブロック7で順次遅
延した信号とすることにより、立上り及び立下り時間を
遅らせるように構成されていた。
Conventionally, this type of semiconductor integrated circuit has a plurality of output circuits 11 connected in parallel, each including a P-channel type MOS transistor QP2 and an N-channel type MOS transistor QN2 connected in series, as shown in FIG. 3. Alternatively, as shown in Fig. 4, a plurality of output circuits 1, each consisting of a series-connected P-channel type MOS transistor Qpt and an N-channel type MOS transistor Qst, which are slow in rising and falling, are connected in parallel. , the gate input of each output circuit 1 is configured to delay the rise and fall times by providing signals sequentially delayed by a delay block 7 having a predetermined amount of delay.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来の半導体集積回路は、高速駆動を実現する
だけか、決まった遅延量を接続することにより立上り立
下りの時間を遅らせるように成っているので、立上り及
び立下り時間の制御ができなかっな。このため、オーバ
ーシュート及びアンダーシュート等の発生に対する対策
が不十分になるという欠点がある。
The conventional semiconductor integrated circuits described above are designed not only to achieve high-speed driving, but also to delay the rise and fall times by connecting a fixed amount of delay, making it impossible to control the rise and fall times. Na. Therefore, there is a drawback that countermeasures against the occurrence of overshoot, undershoot, etc. are insufficient.

〔課題を解決するための手段〕[Means to solve the problem]

本発明の半導体集積回路は、並列に接続されたそれぞれ
がPチャネルMOSトランジスタとNチャネルMOSト
ランジスタとを直列接続して構成される複数の出力回路
と、タイミングパルスを発生する発振回路と、前記タイ
ミングパルスでシフトされる複数のフリップフロップが
直列接続され前記フリップフロップのそれぞれの出力が
前記出力回路のゲート入力に供給されかつ前記フリップ
フロップの初段のデータ入力端子に外部からの入力信号
が供給されるシフトレジスタとを含んで構成される。
The semiconductor integrated circuit of the present invention includes a plurality of output circuits, each of which is configured by connecting a P-channel MOS transistor and an N-channel MOS transistor in series, each of which is connected in parallel, an oscillation circuit that generates a timing pulse, and a timing pulse. A plurality of flip-flops shifted by a pulse are connected in series, and the output of each of the flip-flops is supplied to a gate input of the output circuit, and an external input signal is supplied to a data input terminal of the first stage of the flip-flop. It is configured to include a shift register.

〔実施例〕〔Example〕

次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第1図は本発明の第1の実施例の回路図である。FIG. 1 is a circuit diagram of a first embodiment of the present invention.

第1図に示すように、第1の実施例は並列に接続された
それぞれが立上り立下りの遅いPチャネル型のMOSト
ランジスタQPIとNチャネル型のMOSトランジスタ
QN+を直列に接続した複数の出力回路1と、タイミン
グパルスを発生する発振回路2と、タイミングパルスで
サンプリングされる複数のフリップフロップが直列接続
されたフリップフロップのそれぞれの出力が出力回路1
のゲート・入力に供給されかつフリップフロップの初段
のデータ入力端子りに半導体集積回路の内部回路の出力
が供給される端子Aからの入力信号が供給されるシフト
レジスタ3と、発振回路2の外付けの抵抗4とコンデン
サ5とを含んで構成される。
As shown in FIG. 1, the first embodiment includes a plurality of output circuits in which a P-channel MOS transistor QPI and an N-channel MOS transistor QN+ are connected in series, each of which is connected in parallel and has slow rise and fall. 1, an oscillation circuit 2 that generates a timing pulse, and an output circuit 1 that outputs each of the flip-flops in which a plurality of flip-flops sampled by the timing pulse are connected in series.
A shift register 3 is supplied with an input signal from a terminal A, which is supplied to the gate/input of the flip-flop, and the output of the internal circuit of the semiconductor integrated circuit is supplied to the data input terminal of the first stage of the flip-flop; It is configured to include an attached resistor 4 and a capacitor 5.

第1の実施例では、端子Aから信号を印加し、シフトレ
ジスタ3と発振器2によりサンプリングを行う、このサ
ンプリングされた入力信号により、出力回路1を順次ス
イッチングさせ、スイッチング時に流れる過渡電流のピ
ーク値を発振器2の周波数を制御することにより制御す
る。これにより、立上り立下り時間が制御され、さらに
高速駆動能力が得られる。
In the first embodiment, a signal is applied from the terminal A and sampled by the shift register 3 and the oscillator 2. The output circuit 1 is sequentially switched by the sampled input signal, and the peak value of the transient current flowing during switching is determined. is controlled by controlling the frequency of the oscillator 2. This controls the rise and fall times and provides even higher speed drive capability.

第2図は本発明の第2の実施例の回路図である。FIG. 2 is a circuit diagram of a second embodiment of the invention.

第2図に示すように、第2の実施例では、並列に接続さ
れた出力回路1を発振器2とシフトレジスタ31により
サンプリングしたシフトレジスタ36からの出力信号に
より順次駆動する。ただし、最後に駆動される出力回路
1は前段の駆動信号により、決まった遅延量の遅延ブロ
ック7、を通して駆動される。
As shown in FIG. 2, in the second embodiment, the output circuits 1 connected in parallel are sequentially driven by an output signal from a shift register 36 sampled by an oscillator 2 and a shift register 31. However, the output circuit 1 to be driven last is driven by the previous stage drive signal through the delay block 7 having a predetermined delay amount.

また、第2の実施例でも、発振器2の周波数を制御する
ことによりサンプリング周期が制御されるため、立上り
立下り時間を制御できる。
Also in the second embodiment, the sampling period is controlled by controlling the frequency of the oscillator 2, so the rise and fall times can be controlled.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、シフトレジスタと発振器
により出力信号をサンプリングし、そのサンプリング信
号により出力回路を駆動することにより、立上り及び立
下り時間が制御でき、更に高駆動能力を実現できるとい
う効果がある。更に、これにより、オーバーシュート及
びアンダーシュートの発生を抑制できるという効果があ
る。
As explained above, the present invention has the advantage that by sampling the output signal using a shift register and an oscillator and driving the output circuit with the sampling signal, the rise and fall times can be controlled, and even higher drive capability can be achieved. There is. Furthermore, this has the effect of suppressing the occurrence of overshoot and undershoot.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の第1の実施例の回路図、第2図は本発
明の第2の実施例の回路図、第3図及び第4図はそれぞ
れ従来の半導体集積回路の第1及び第2の例の回路図で
ある。 1.1.・・・出力回路、2・・・発振回路、3,3゜
・・・シフトレジスタ、4・・・外付は抵抗、5・・・
コンデンサ、6・・・信号を同相にするインバータブロ
ック、7,7.・・・遅延ブロック、QPI、QNI・
・・立上り立下りの遅りMOSトランジスタ、QP21
 QN2・・・立上り立下りの速いMOSトランジスタ
FIG. 1 is a circuit diagram of a first embodiment of the present invention, FIG. 2 is a circuit diagram of a second embodiment of the present invention, and FIGS. 3 and 4 are a circuit diagram of a conventional semiconductor integrated circuit, respectively. FIG. 3 is a circuit diagram of a second example. 1.1. ...output circuit, 2...oscillation circuit, 3,3゜...shift register, 4...external resistor, 5...
Capacitor, 6... Inverter block that makes signals in phase, 7, 7. ...delay block, QPI, QNI・
...delayed rise and fall MOS transistor, QP21
QN2... MOS transistor with fast rise and fall.

Claims (1)

【特許請求の範囲】[Claims] 並列に接続されたそれぞれがPチャネルMOSトランジ
スタとNチャネルMOSトランジスタとを直列接続して
構成される複数の出力回路と、タイミングパルスを発生
する発振回路と、前記タイミングパルスでシフトされる
複数のフリップフロップが直列接続され前記フリップフ
ロップのそれぞれの出力が前記出力回路のゲート入力に
供給されかつ前記フリップフロップの初段のデータ入力
端子に外部からの入力信号が供給されるシフトレジスタ
とを含むことを特徴とする半導体集積回路。
A plurality of output circuits connected in parallel are each constructed by connecting a P-channel MOS transistor and an N-channel MOS transistor in series, an oscillation circuit that generates a timing pulse, and a plurality of flip-flops that are shifted by the timing pulse. a shift register in which flip-flops are connected in series, each output of the flip-flop is supplied to a gate input of the output circuit, and an input signal from the outside is supplied to a data input terminal of the first stage of the flip-flop. Semiconductor integrated circuit.
JP63258707A 1988-10-13 1988-10-13 Semiconductor integrated circuit Pending JPH02105615A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63258707A JPH02105615A (en) 1988-10-13 1988-10-13 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63258707A JPH02105615A (en) 1988-10-13 1988-10-13 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPH02105615A true JPH02105615A (en) 1990-04-18

Family

ID=17323979

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63258707A Pending JPH02105615A (en) 1988-10-13 1988-10-13 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPH02105615A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0422391A2 (en) * 1989-10-10 1991-04-17 International Business Machines Corporation CMOS driver circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0422391A2 (en) * 1989-10-10 1991-04-17 International Business Machines Corporation CMOS driver circuit
EP0422391A3 (en) * 1989-10-10 1991-07-03 International Business Machines Corporation Cmos driver circuit

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