JPH02103936A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH02103936A JPH02103936A JP25771388A JP25771388A JPH02103936A JP H02103936 A JPH02103936 A JP H02103936A JP 25771388 A JP25771388 A JP 25771388A JP 25771388 A JP25771388 A JP 25771388A JP H02103936 A JPH02103936 A JP H02103936A
- Authority
- JP
- Japan
- Prior art keywords
- silicon nitride
- nitride film
- plasma silicon
- ion concentration
- hydrogen ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 39
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 51
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 51
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000002131 composite material Substances 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 8
- 230000001681 protective effect Effects 0.000 abstract description 12
- 230000008859 change Effects 0.000 abstract description 9
- 230000002411 adverse Effects 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 5
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 11
- 230000015556 catabolic process Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- -1 hydrogen ions Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 230000008569 process Effects 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
この発明は保護膜を有する半導体装置に関し、特に、保
護膜としてプラズマシリコン窒化膜を有する半導体装置
に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device having a protective film, and particularly to a semiconductor device having a plasma silicon nitride film as a protective film.
［従来の技術］
半導体の保護膜として、プラズマ化学気相成長法を用い
て形成したプラズマシリコン窒化膜が広く使用されてい
る。[Prior Art] Plasma silicon nitride films formed using plasma chemical vapor deposition are widely used as protective films for semiconductors.
第６図はプラズマシリコン窒化膜を保護膜として有し、
ツェナーダイオードを内蔵する従来の半導体装置を表わ
す断面図である。第６図を参照して、主表面を有するｐ
型シリコン基板９上に、拡散法によりｎ＋＋埋込層１０
が形成される。０＋型型埋層１０の上にさらにｎ型シリ
コンエピタキシャル層１が形成される。素子領域を他の
素子領域から分離するためのｐ型素子分＃１頭域１１が
、素子領域周辺に形成される。ｎ 型エピタキシャル層
１上にｐ型ベース層２が拡散法または注入法等により形
成される。さらにｐ型ベース層２の上にｎ＋型エミッタ
層３が形成される。以上の過程において、ｐ型基板９の
主表面上には酸化膜４が形成されている。FIG. 6 has a plasma silicon nitride film as a protective film,
1 is a cross-sectional view showing a conventional semiconductor device incorporating a Zener diode. With reference to FIG. 6, p having a main surface
An n++ buried layer 10 is formed on a type silicon substrate 9 by a diffusion method.
is formed. An n-type silicon epitaxial layer 1 is further formed on the 0+ type buried layer 10. A p-type element #1 region 11 for separating the element region from other element regions is formed around the element region. A p-type base layer 2 is formed on the n-type epitaxial layer 1 by a diffusion method, an implantation method, or the like. Furthermore, an n+ type emitter layer 3 is formed on the p type base layer 2. In the above process, oxide film 4 is formed on the main surface of p-type substrate 9.
酸化膜４の、ｐ型ベース層２の上の部分には電極用の開
口部か形成され、ツェナーダイオードの陰極側アルミ電
極７が設けられる。＋１＋型工ミツタ層３の上の部分に
も電極用の開口部が形成され、ツェナーダイオードの陽
極側アルミ電極８が設けられる。さらにその上に、プラ
ズマシリコン窒化ｊＩ受１５が形成される。An opening for an electrode is formed in a portion of the oxide film 4 above the p-type base layer 2, and an aluminum electrode 7 on the cathode side of the Zener diode is provided. An opening for an electrode is also formed in the upper part of the +1+ type mitsuta layer 3, and an aluminum electrode 8 on the anode side of the Zener diode is provided. Furthermore, a plasma silicon nitride layer 15 is formed thereon.
次に第６図を参照して、従来の半導体装置の動作が説明
される。陰極側アルミ電極７はｖｃ地され、陽極側アル
ミ電極８に正の電圧が印加される。すると１１＋型工ミ
ツタ層３とｐ型ベース層２のｐｎ接合部の空乏層が増大
し、特にｐ型ベース層２内に広がる。両電極間に印加さ
れる電圧が、成る値（ツェナー電圧値と呼ぶ）を越える
と、ツェナー降伏およびなだれ降伏のために、上記空乏
層中にキャリアが大量に発生する。その結果両電極間に
流れる電流か急増する。このとき、両電極間を流れる電
流の大きさが変化しても、両電極間の電圧はほとんど変
化しない。このため、この型のダイオードは直流電圧を
安定化させる１」的で用いられる。Next, the operation of the conventional semiconductor device will be explained with reference to FIG. The aluminum electrode 7 on the cathode side is connected to the VC ground, and a positive voltage is applied to the aluminum electrode 8 on the anode side. Then, the depletion layer at the pn junction between the 11+ type active layer 3 and the p-type base layer 2 increases, and particularly spreads within the p-type base layer 2. When the voltage applied between the two electrodes exceeds a value (referred to as Zener voltage value), a large amount of carriers are generated in the depletion layer due to Zener breakdown and avalanche breakdown. As a result, the current flowing between both electrodes increases rapidly. At this time, even if the magnitude of the current flowing between the two electrodes changes, the voltage between the two electrodes hardly changes. For this reason, this type of diode is used for the purpose of stabilizing DC voltage.
また、プラズマシリコン窒化膜１５は特に耐湿性に優れ
た保：ｊＪｌ膜として機能し、厚膜化か容易でクラック
も小さいという利点がある。Further, the plasma silicon nitride film 15 functions as a protective film with particularly excellent moisture resistance, and has the advantage that it can be easily made thick and cracks are small.
［発明が解決しようとする課題］
しかしながら、従来の半導体装置には以下のような問題
点があった。保護膜として用いられるプラズマシリコン
窒化膜１５の水素イオンｒＨ度は比較的高い。ところが
、たとえばＭＯＳＪｔ２電界効果型トランジスタ（以下
ＭＯ５ＦＥＴと略す）においては、保護膜中に＠有され
る水素イオンが原因となって、しきい値電圧に異常な経
時変化が引き起こされることが明らかにされている。こ
れはたとえば、”Ｔｈｒｅｓｈｏｌｄ−Ｖｏｌｔａｇｅ
Ｉｎｓｔａｂｉｌｉｔｙ ｉｎ ＭＯ３ＦＥＴ’ｓ
Ｄｕｅ ｔｏ Ｃｈａｎｎｅｌ Ｈｏｔ−Ｈ
ｏ１ｅ Ｅｍｉｓｓｉｏｎ （ＲｉｃｈａｒｄＢ、
Ｆａｉｒ、 Ｒｏｂｅｒｔ Ｃ，Ｓｕｎ。[Problems to be Solved by the Invention] However, conventional semiconductor devices have the following problems. The hydrogen ion rH degree of the plasma silicon nitride film 15 used as a protective film is relatively high. However, it has been revealed that, for example, in a MOSJt2 field effect transistor (hereinafter abbreviated as MO5FET), hydrogen ions contained in the protective film cause an abnormal change in threshold voltage over time. ing. For example, "Threshold-Voltage"
Instability in MO3FET's
Due to Channel Hot-H
o1e Emission (Richard B,
Fair, Robert C. Sun.
ＩＥＥＥ Ｔｒａｎｓａｃｔｉｏｎ ｏｎ Ｅｌ
ｅｃｔｒｏｎ Ｄｅｖｉｃｅｓ、 ｖｏｌ、ＣＤ
−２８，ｎｏ、］、、ＪＡＮ、１．９８１）に記載され
ている。IEEE Transaction on El
ectron Devices, vol, CD
-28, no.], JAN, 1.981).
同様の現象はＭＯＳＦＥＴのみならず、ツエナーダ・ｆ
オードのツェナー電圧値の経時変化においても起こり、
原因も同様にプラズマシリコン窒化膜中の水素だと考え
られる。特に、ツェナーダイオードのように保護膜近く
て降伏現象か起きる場合、特にその影響が大きいと考え
られる。A similar phenomenon occurs not only in MOSFETs, but also in Zenada f
It also occurs when the zener voltage value of the ode changes over time.
The cause is also thought to be hydrogen in the plasma silicon nitride film. In particular, when a breakdown phenomenon occurs near a protective film, such as in a Zener diode, the effect is thought to be particularly large.
そこで、プラズマシリコン窒化膜の水素イオン濃度を低
下させれば、たとえばツェナーダイオードにおけるツェ
ナー電圧値の経時変化か減少すると考えられる。Therefore, it is thought that if the hydrogen ion concentration of the plasma silicon nitride film is lowered, the change over time of the Zener voltage value in a Zener diode, for example, will be reduced.
ところが、プラズマシリコン窒化膜を保護膜として使用
した場合、水素イオンｆａ度を減少させると膜ストレス
が増し、アルミ電極などへの悪影響を引き起こすことが
知られている。However, when a plasma silicon nitride film is used as a protective film, it is known that reducing the hydrogen ion fa degree increases film stress and causes an adverse effect on aluminum electrodes and the like.
したがって、この発明のｉ１的は、プラズマシリコン窒
化膜の持つ利点を生かしながら、電極に悪影響を及ぼす
ことなく、シかもツェナーダイオードのツェナー電圧値
に代表される電気的特性の経時変化が少ない半導体装置
を提１３＋、することである。Therefore, the first object of the present invention is to make use of the advantages of the plasma silicon nitride film, to produce a semiconductor device that does not adversely affect the electrodes, and to have little change over time in the electrical characteristics represented by the Zener voltage value of the Zener diode. Proposition 13+, is to do.
［課題を解決するための手段］
この発明に係る半導体装置は、主表面を１゛シ、ｐめ定
める導７は型の予め定める不純物濃度を有する半導体基
板と、半導体基板の主表面上に形成された半導体腹合物
と、半導体複合物上に形成され、半導体複合物を保護す
るだめの第１の水素イオン濃度をイ１゛する第１のプラ
ズマシリコン窒化膜と、第１のプラズマシリコン窒化膜
上に形成され、第１の水素イオン濃度よりも高い第２の
水素イオン濃度をＵする第２のプラズマシリコン窒化膜
とを含む。[Means for Solving the Problems] A semiconductor device according to the present invention includes a semiconductor substrate having a predetermined impurity concentration of a type, and a conductor 7 formed on the main surface of the semiconductor substrate. a first plasma silicon nitride film formed on the semiconductor composite and having a first hydrogen ion concentration to protect the semiconductor composite; a second plasma silicon nitride film formed on the film and having a second hydrogen ion concentration higher than the first hydrogen ion concentration.
［作用］
この発明に係る半導体装置は以上のように構成されたた
め、たとえばＭＯＳＦＥＴやツェナーダイオード等のよ
うな半導体複合物に近い部分の第１のプラズマシリコン
窒化膜中の水素イオン濃度が低い。したがって、ツェナ
ーダイオードのツェナー電圧値に代表される電気的特性
に悪影響を与える水素数は従来装置と比較して低減され
る。[Operation] Since the semiconductor device according to the present invention is configured as described above, the concentration of hydrogen ions in the first plasma silicon nitride film is low in a portion close to a semiconductor composite such as a MOSFET or a Zener diode. Therefore, the number of hydrogen atoms that adversely affect the electrical characteristics represented by the Zener voltage value of the Zener diode is reduced compared to the conventional device.
また、第１のプラズマシリコン窒化膜の上に、比較的高
い第２の水素イオン濃度を有する第２のプラズマシリコ
ン窒化膜が形成されている。このため、プラズマシリコ
ン窒化膜中の膜ストレスが増大することが避けられる。Furthermore, a second plasma silicon nitride film having a relatively high second hydrogen ion concentration is formed on the first plasma silicon nitride film. Therefore, increase in film stress in the plasma silicon nitride film can be avoided.
［実施例］
第１図はこの発明の一実施例を示す、ツェナーダイオー
ドを含む半導体装置の要部の断面図である。第３図はこ
の発明の一実施例のツェナーダイオードを含む半導体装
置の要部の平面図で、第３図の１−１面での断面図が第
１図に相当する。第２図は第１図に示す半導体装置の製
造方法を示す断面図である。[Embodiment] FIG. 1 is a sectional view of a main part of a semiconductor device including a Zener diode, showing an embodiment of the present invention. FIG. 3 is a plan view of a main part of a semiconductor device including a Zener diode according to an embodiment of the present invention, and the cross-sectional view taken along plane 1-1 in FIG. 3 corresponds to FIG. FIG. 2 is a sectional view showing a method of manufacturing the semiconductor device shown in FIG.
第２図（ａ）を参照して、ｐ型基板９上に拡散法により
ｒ１＋型埋込層１０が形成される。その上にｎ型エピタ
キシャル層１が形成され、酸化膜１２をマスクに拡散法
等によりｐ型素子分離領域１１が形成される。Referring to FIG. 2(a), an r1+ type buried layer 10 is formed on a p type substrate 9 by a diffusion method. An n-type epitaxial layer 1 is formed thereon, and a p-type element isolation region 11 is formed by a diffusion method or the like using the oxide film 12 as a mask.
第２図（ｂ）を参照して、表面に熱処理が行なわれ注入
された不純物を拡散すると同時に酸化膜１３が形成され
る。酸化膜１３のｐ型ベース層２の上の部分を除去し、
酸化膜１３をマスクにｐ型不純物をドープしてｐｘベー
ス層２を形成する。Referring to FIG. 2(b), an oxide film 13 is formed at the same time as heat treatment is performed on the surface and the implanted impurities are diffused. A portion of the oxide film 13 above the p-type base layer 2 is removed,
A px base layer 2 is formed by doping p-type impurities using the oxide film 13 as a mask.
第２図（ｃ）を参照して、さらに熱処理を行なって不純
物を拡散し、酸化膜１４を形成する。酸化膜１４のｎ＋
型エミッタ層３の１の部分を除去し、酸化膜１４をマス
クにｎ’４２不純物をドープしてｎ＋型エミッタ層３を
形成する。Referring to FIG. 2(c), heat treatment is further performed to diffuse impurities and form an oxide film 14. n+ of oxide film 14
A portion 1 of the type emitter layer 3 is removed, and an n'42 impurity is doped using the oxide film 14 as a mask to form the n+ type emitter layer 3.
第２図（ｄ）を参照して、熱処理をしてロ＋型エミッタ
層３にドープされた不純物を拡散させ、酸化膜４を形成
する。酸化膜４の１１＋型エミツタ１凶３の上に開口部
が設けられ、ツェナーダイオードの陽極側アルミ電極８
が形成される。また、酸化膜４のｐ型ベース層２の上に
開口部が設けられ、ツェナーダイオードの隙極側アルミ
電極７が形成される。Referring to FIG. 2(d), a heat treatment is performed to diffuse the impurity doped into the R+ type emitter layer 3, thereby forming an oxide film 4. An opening is provided above the 11+ type emitter 1 and 3 of the oxide film 4, and an aluminum electrode 8 on the anode side of the Zener diode is provided.
is formed. Further, an opening is provided on the p-type base layer 2 of the oxide film 4, and an aluminum electrode 7 on the gap electrode side of the Zener diode is formed.
第２図（ｅ）を参照して、比較的低い第１の水素イオン
／ａ疫を有する第１のプラズマシリコン窒化膜５を、少
なくとも２０００属性度の厚みまで形成する。Referring to FIG. 2(e), a first plasma silicon nitride film 5 having a relatively low first hydrogen ion/a ratio is formed to a thickness of at least 2000 attributes.
さらに、第１のプラズマシリコン窒化膜５の上に、比較
的高い第２の水素イオン濃度をイｆする第２のプラズマ
シリコン窒化膜６を５０００Ａ〜６０００人程度の厚さ
で形成し、第１図に示す甲導体装置が得られる。Further, on the first plasma silicon nitride film 5, a second plasma silicon nitride film 6 having a relatively high second hydrogen ion concentration is formed to a thickness of about 5000A to 6000A, and The A conductor device shown in the figure is obtained.
プラズマシリコン窒化膜中の水素イオン濃度は、プラズ
マシリコン窒化膜生成時の反応ガス中のモノシランガス
（ＳｉＨ４）とアンモニアガス（ＮＨａ）との流量比（
Ｓ ｉ Ｈ４／ＮＨ３）や、プラズマシリコン窒化膜生
成温度（以下ＴＧと略す）と関連あることが知られてい
る。たとえば、ＴＧとプラズマシリコン窒化膜中の水素
イオン濃度との間には第４図のような関係がある（実験
値）。The hydrogen ion concentration in the plasma silicon nitride film is determined by the flow rate ratio (
S i H4/NH3) and plasma silicon nitride film formation temperature (hereinafter abbreviated as TG). For example, there is a relationship as shown in FIG. 4 between TG and the hydrogen ion concentration in the plasma silicon nitride film (experimental values).
なお、第４図はＳ ｉ Ｈ４／ Ｎ Ｈ３■０．１５と
した場合を示す。Note that FIG. 4 shows the case where S i H4/NH3 0.15.
この実施例では、たとえばＴＧ −３８０℃で水素イオ
ン濃度が１．０ＸＩＯ２２Ｃ１１ｌ−’程度の第１のプ
ラズマシリコン窒化膜５を形成後、ＴＧ−３００℃で水
素イオン濃度が２．２ＸＩＯ２２ｃｍ−’程度の第２の
プラズマシリコン窒化膜６を形成した。In this embodiment, for example, after forming the first plasma silicon nitride film 5 with a hydrogen ion concentration of about 1.0XIO22C11l-' at TG -380°C, a hydrogen ion concentration of about 2.2XIO22C11l-' is formed at TG-300°C. A second plasma silicon nitride film 6 was formed.
次に、第１図を参照して、本発明に係る半導体装置の動
作か説明される。陰極側アルミ電極７は接地され、陽極
側アルミ電極８に正の電圧が印加される。すると「１＋
型工ミツタ層３とｐ型ベース層２のｐ ｒ＋接合部の空
乏層が増大し、特にｐ型ベース層２中に広がる。両７６
極間に印加される電圧が成る値、すなわちツェナー電圧
値を越えると、ツェナー降伏およびなだれ降伏のために
空乏層中にキャリアが大量に発生する。その結果両電極
間に流れる電流が急増する。このとき流れる電流の大き
さが変化しても、両電極間の電圧はほとんど変化しない
。このため、この型のダイオードは直流電圧を安定化さ
せる目的で用いることができる。Next, the operation of the semiconductor device according to the present invention will be explained with reference to FIG. The cathode aluminum electrode 7 is grounded, and a positive voltage is applied to the anode aluminum electrode 8. Then “1+
The depletion layer at the pr+ junction between the mold layer 3 and the p-type base layer 2 increases, and particularly spreads into the p-type base layer 2. Both 76
When the voltage applied between the electrodes exceeds a certain value, that is, the Zener voltage value, a large amount of carriers are generated in the depletion layer due to Zener breakdown and avalanche breakdown. As a result, the current flowing between both electrodes increases rapidly. Even if the magnitude of the current flowing at this time changes, the voltage between the two electrodes hardly changes. Therefore, this type of diode can be used for the purpose of stabilizing DC voltage.
この際、ｎ＋型埋込層１０には、半導体装置のコレクタ
抵抗を減少させる機能がある。またプラズマシリコン窒
化膜５および６は特に耐湿性に優れ、電極の腐食防１１
−などの機能を持つ保護膜としての働きがある。さらに
、ツェナー電圧値の経時変化に悪影響を与えると考えら
れる、第１のプラズマシリコン窒化膜５の水素イオン濃
度は低い。At this time, the n+ type buried layer 10 has a function of reducing the collector resistance of the semiconductor device. In addition, the plasma silicon nitride films 5 and 6 have particularly excellent moisture resistance, and have excellent corrosion resistance for electrodes.
-It acts as a protective film with other functions. Furthermore, the hydrogen ion concentration of the first plasma silicon nitride film 5 is low, which is considered to have an adverse effect on the change in the Zener voltage value over time.
また、第１のプラズマシリコン窒化膜５上には、比較的
高い第２の水素イオン濃度を資する第２のプラズマシリ
コン窒化膜６か形成されている。そのため、電極に断線
などの悪影響を与える保護膜中の膜ストレスは小さい。Further, on the first plasma silicon nitride film 5, a second plasma silicon nitride film 6 contributing to a relatively high second hydrogen ion concentration is formed. Therefore, the film stress in the protective film that adversely affects the electrodes such as disconnection is small.
このように作製された半導体装置に含まれるツェナーダ
イオードは、第５図に示されるように、従来装置と比較
してそのツェナー電圧値の経時変化が著しく改浮された
。なお、第５図は従来の二１′導体装置と、本発明に係
る半導体装置とを数時間作動させたときの、ツェナーダ
イオードのツェナー電圧値の変動を示す。第５図中、縦
線は複数のツェナーダイオードの示すツェナー電圧値の
変動の分子１１範囲を示し、Ｏ印の点は、分６ｉの平均
値を示す。As shown in FIG. 5, the Zener diode included in the semiconductor device manufactured in this manner has a significantly improved change in Zener voltage value over time compared to the conventional device. Incidentally, FIG. 5 shows changes in the Zener voltage value of the Zener diode when the conventional 21' conductor device and the semiconductor device according to the present invention are operated for several hours. In FIG. 5, the vertical lines indicate the numerator 11 range of fluctuations in Zener voltage values exhibited by a plurality of Zener diodes, and the points marked O indicate the average value of the numerator 6i.
なお、この発明は上述の実施例に限定されない。Note that this invention is not limited to the above-described embodiments.
たとえば、上記実施例はｎ”−ｐ接合のツェナーダイオ
ードについて説明されたが、ｎ −ｐ＋接合のツェナー
ダイオードでもよい。また、ツェナーダイオードに限ら
ず、たとえばＮ１０ｓＦＥＴを含む゛１ミ導体装置の製
造方法にも応用でき、そのしきい値電圧の経時な化を改
苫することもできる。For example, although the above embodiment has been described with respect to an n''-p junction Zener diode, an n-p+ junction Zener diode may also be used.Also, the manufacturing method is not limited to Zener diodes, and is not limited to Zener diodes. It is also possible to modify the change in threshold voltage over time.
［発明の効果］
この発明に係る半導体装置は、主表面をＨし予め定める
導電型の予め定める不純物濃度を−有する半導体基板と
、半導体基板の主表面上に形成された半導体複合物と、
半導体腹合物上に形成され、半導体複合物を保護するた
めの第１の水素イオン濃度を白゛する第１のプラズマシ
リコン窒化膜と、第１のプラズマシリコン窒化膜上に形
成され、第１の水素イオン濃度よりも高い第２の水素イ
オン濃度を有する第２のプラズマシリコン窒化膜とを含
む。[Effects of the Invention] A semiconductor device according to the present invention includes: a semiconductor substrate having a main surface H and having a predetermined conductivity type and a predetermined impurity concentration; a semiconductor composite formed on the main surface of the semiconductor substrate;
a first plasma silicon nitride film formed on the semiconductor composite and having a first hydrogen ion concentration for protecting the semiconductor composite; a second plasma silicon nitride film having a second hydrogen ion concentration higher than the hydrogen ion concentration of the second plasma silicon nitride film.
この発明に係る゛ト導体装置は以上のよう（１η成され
たため、たとえばＭＯＳＦＥＴやツェナーダイオード等
のような半導体１勺合物に近い部分の第１のプラズマシ
リコン窒化膜中の水素イオンｌ震度が低い。したがって
、ツェナーダイオードのツェナ電圧値に代表される電気
的特性に悪影響を′ｊえる水素数は、従来装置と比較し
てａｔ減される。Since the conductor device according to the present invention is constructed as described above (1η), the seismic intensity of hydrogen ions in the first plasma silicon nitride film in a portion close to a semiconductor compound such as a MOSFET or a Zener diode is Therefore, the number of hydrogen atoms which adversely affect the electrical characteristics represented by the Zener voltage value of the Zener diode is reduced compared to the conventional device.
また、第１のプラズマシリコン窒化膜の上に、比較的高
い第２の水素イオン濃度を自゛する第２のプラズマシリ
コン窒化膜が形成されている。このため、プラズマシリ
コン窒化膜中の膜ストレスが増大することは避けられる
。Further, a second plasma silicon nitride film having a relatively high second hydrogen ion concentration is formed on the first plasma silicon nitride film. Therefore, an increase in film stress in the plasma silicon nitride film can be avoided.
したがって、この発明によれば、プラズマシリコン窒化
膜の持つ利点を生かしながら、電−に悪影響を及ぼすこ
となく、しかもツェナーダイオードのツェナー電圧値に
代表される電気的特性の経時変化が少ない半導体装置を
提供することができる。Therefore, according to the present invention, it is possible to create a semiconductor device that takes advantage of the advantages of a plasma silicon nitride film, has no adverse effect on electricity, and has little change over time in its electrical characteristics, typified by the Zener voltage value of a Zener diode. can be provided.
第１図は本発明に係る半導体装置の要部を示す断面図で
あり、第２図は第１図に示された半導体装置の製造ステ
ップを示す断面図であり、第３図は第１図に示された半
導体装置の要部の甲面図であり、第４図はプラズマシリ
コン窒化膜生成温度と、膜中水素イオン濃度との関係を
示すグラフであり、第５図は本発明の一実施例として示
された半導体装置の電気的特性の改冴を示すグラフであ
り、第６図は従来の半導体装置の要部を示す断面図であ
る。
図中１はｎ型シリコンエピタキシャル層、２はｐ型ベー
ス層、３はｒ１＋型エミッタ層、４は酸化膜、５は比較
的低い第１の水素イオン濃度を白゛する第１のプラズマ
シリコン窒化膜、６は比較的高い第２の水素イオンｌ震
度を白゛する第２のプラズマシリコン窒化膜、７はツェ
ナーダイオードの陰極側アルミ電極、８は陽極側アルミ
電極、９はｐ型シリコン基板、１０はｎ＋型埋込層、１
１はｐ型素子分離領域、１２〜１４は酸化膜、１５は従
来装置のプラズマシリコン窒化膜を示す。
なお、図中同一符号は同一または相当部分を示す。FIG. 1 is a cross-sectional view showing essential parts of a semiconductor device according to the present invention, FIG. 2 is a cross-sectional view showing manufacturing steps of the semiconductor device shown in FIG. 1, and FIG. FIG. 4 is a graph showing the relationship between plasma silicon nitride film formation temperature and hydrogen ion concentration in the film, and FIG. 5 is a diagram showing the relationship between plasma silicon nitride film formation temperature and hydrogen ion concentration in the film. 6 is a graph showing the improvement of electrical characteristics of a semiconductor device shown as an example, and FIG. 6 is a cross-sectional view showing a main part of a conventional semiconductor device. In the figure, 1 is an n-type silicon epitaxial layer, 2 is a p-type base layer, 3 is an r1+ type emitter layer, 4 is an oxide film, and 5 is a first plasma silicon nitride layer with a relatively low first hydrogen ion concentration. 6 is a second plasma silicon nitride film exhibiting a relatively high second hydrogen ion intensity; 7 is an aluminum electrode on the cathode side of the Zener diode; 8 is an aluminum electrode on the anode side; 9 is a p-type silicon substrate; 10 is an n+ type buried layer, 1
1 is a p-type element isolation region, 12 to 14 are oxide films, and 15 is a plasma silicon nitride film of a conventional device. Note that the same reference numerals in the figures indicate the same or corresponding parts.
Claims (1)
度を有する半導体基板と、 前記主表面上に形成された半導体複合物と、前記半導体
複合物上に形成され、前記半導体複合物を保護するため
の第１の水素イオン濃度を有する第１のプラズマシリコ
ン窒化膜と、 前記第１のプラズマシリコン窒化膜上に形成され、第２
の水素イオン濃度を有する第２のプラズマシリコン窒化
膜とを含み、 前記第１の水素イオン濃度は前記第２の水素イオン濃度
よりも低く選ばれる半導体装置。[Scope of Claims] A semiconductor substrate having a main surface and having a predetermined impurity concentration of a predetermined conductivity type; a semiconductor composite formed on the main surface; a first plasma silicon nitride film having a first hydrogen ion concentration for protecting a semiconductor composite; a second plasma silicon nitride film formed on the first plasma silicon nitride film;
a second plasma silicon nitride film having a hydrogen ion concentration, wherein the first hydrogen ion concentration is selected to be lower than the second hydrogen ion concentration.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25771388A JPH02103936A (en) | 1988-10-13 | 1988-10-13 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25771388A JPH02103936A (en) | 1988-10-13 | 1988-10-13 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02103936A true JPH02103936A (en) | 1990-04-17 |
Family
ID=17310076
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25771388A Pending JPH02103936A (en) | 1988-10-13 | 1988-10-13 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02103936A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5714408A (en) * | 1995-12-14 | 1998-02-03 | Denso Corporation | Method of forming silicon nitride with varied hydrogen concentration |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60244057A (en) * | 1984-05-18 | 1985-12-03 | Nec Corp | Semiconductor device |
| JPS62204575A (en) * | 1986-03-05 | 1987-09-09 | Matsushita Electric Ind Co Ltd | Thin film semiconductor device and manufacture thereof |
| JPS63213934A (en) * | 1987-03-03 | 1988-09-06 | Nec Corp | Semiconductor device |
-
1988
- 1988-10-13 JP JP25771388A patent/JPH02103936A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60244057A (en) * | 1984-05-18 | 1985-12-03 | Nec Corp | Semiconductor device |
| JPS62204575A (en) * | 1986-03-05 | 1987-09-09 | Matsushita Electric Ind Co Ltd | Thin film semiconductor device and manufacture thereof |
| JPS63213934A (en) * | 1987-03-03 | 1988-09-06 | Nec Corp | Semiconductor device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5714408A (en) * | 1995-12-14 | 1998-02-03 | Denso Corporation | Method of forming silicon nitride with varied hydrogen concentration |
| US6137156A (en) * | 1995-12-14 | 2000-10-24 | Denso Corporation | Semiconductor device employing silicon nitride layers with varied hydrogen concentration |
| KR100271222B1 (en) * | 1995-12-14 | 2000-12-01 | 오카베 히로무 | Semiconductor device and method for manufacturing same |
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