JPH02101468A - Fine pattern forming method - Google Patents
Fine pattern forming methodInfo
- Publication number
- JPH02101468A JPH02101468A JP63255117A JP25511788A JPH02101468A JP H02101468 A JPH02101468 A JP H02101468A JP 63255117 A JP63255117 A JP 63255117A JP 25511788 A JP25511788 A JP 25511788A JP H02101468 A JPH02101468 A JP H02101468A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- pattern
- concentration
- photosensitive group
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 19
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- 238000009826 distribution Methods 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 4
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 230000007261 regionalization Effects 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 6
- 125000000664 diazo group Chemical group [N-]=[N+]=[*] 0.000 abstract description 5
- 238000005549 size reduction Methods 0.000 abstract 1
- 230000009467 reduction Effects 0.000 description 7
- 230000031700 light absorption Effects 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229930192627 Naphthoquinone Natural products 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000004061 bleaching Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012954 diazonium Substances 0.000 description 1
- 150000001989 diazonium salts Chemical class 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000002791 naphthoquinones Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は微細パターン形成方法に関し、特に島解像度レ
ジストパターン形成方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for forming a fine pattern, and more particularly to a method for forming an island resolution resist pattern.
従来の技術
半導体装置は最近ますます高密度化され、各々の素子の
微細パターンの寸法は、１ミクロン以下に及んでいる。BACKGROUND OF THE INVENTION Recently, semiconductor devices have become more and more densely packed, and the dimensions of the fine patterns of each element are now 1 micron or less.
従来このような１ミクロン以下のパターン形成法として
は、５倍あるいは１０倍の縮少投影レンズを有したステ
ッパにより、半導体１、発明の名称
微細パターン形成方法
２、特許請求の範囲
（１）半導体基板の表面に感光基濃度が基板表面側に多
く基板付近に少ないような分布になっているレジスト膜
を形成する工程と、光露光法により前記レジスト膜上に
半導体集積回路のパターンの潜像を生成する工程と、所
定の現像液により露光されたｍＪ記潜像部の前記レジス
トを除去 ３、し前記レジストパターンを形成する工程
とを備えてなる微細パターン形成方法。Conventionally, as a method for forming a pattern of 1 micron or less, a stepper having a 5x or 10x reduction projection lens is used. A step of forming a resist film on the surface of the substrate in which the concentration of photosensitive groups is distributed such that the concentration of photosensitive groups is higher on the substrate surface side and less near the substrate, and a latent image of the pattern of the semiconductor integrated circuit is formed on the resist film by a light exposure method. 3. A method for forming a fine pattern, comprising a step of generating the resist pattern, and a step of removing the resist in the mJ latent image portion exposed with a predetermined developer, and forming the resist pattern.
ｅ）半導体基板の表面にレジスト膜を塗布し、前記レジ
スト膜の表面を冷却し基板側を所定の温度でベーキング
する事によりレジスト中の感光基濃度の分布を形成する
ことを特徴とする特許請求の範囲第１項記載の微細パタ
ーン形成方法。e) A patent claim characterized in that a photosensitive group concentration distribution in the resist is formed by applying a resist film to the surface of a semiconductor substrate, cooling the surface of the resist film, and baking the substrate side at a predetermined temperature. The fine pattern forming method according to item 1.
（３）半導体基板の表面にレジスト膜を塗布し、前記レ
ジスト中に電子線を照射する事によりレジスト中の感光
基濃度の分布を形成することを特ウェハの一表面に塗布
されたレジスト上に半導体集積回路パターンからなるレ
チクルパターンが投影されていた。(3) A resist film is applied to the surface of a semiconductor substrate, and a photosensitive group concentration distribution in the resist is formed by irradiating the resist with an electron beam. A reticle pattern consisting of a semiconductor integrated circuit pattern was projected.
第４図にステッパを用いた場合のレジスト中へのパター
ンの形成の様子を示す。第４図に示すようにレチクル（
マスク）４０内に形成された白黒のパターン４１は、レ
チクルパターン４１に照明光４３を入射すると光の回折
により半導体ウエノ・上のレジスト表面上では、レチク
ル上の遮光部となる黒パターン部４４へも光が入り込む
。FIG. 4 shows how a pattern is formed in a resist using a stepper. As shown in Figure 4, the reticle (
When illumination light 43 is incident on the reticle pattern 41, the black and white pattern 41 formed in the mask) 40 is diffracted into a black pattern portion 44 on the resist surface on the semiconductor wafer, which serves as a light shielding portion on the reticle. Light also enters.
発明が解決しようとする課題
こうした光の入り込みにより、レジストへの露光は口内
４２に示す光強度分布となり、十分なコントラストが得
られない。又、同時にレジストに入射した光はレジスト
内を伝搬する際レジスト中で吸収されるためレジスト上
層と下層ではレジストに与えられる光量が異なる。その
結果ステッパにより露光されたレジストを所定の現像液
で現像するとレジストパターン形状はレジスト中で吸収
された光強度分布に対応した台形形状のパターン４６が
形成され、充分な解像度が得られない等の問題があった
。Problems to be Solved by the Invention Due to the entry of such light, exposure to the resist results in a light intensity distribution shown in the mouth 42, and sufficient contrast cannot be obtained. Furthermore, since the light incident on the resist at the same time is absorbed in the resist when propagating within the resist, the amount of light given to the resist differs between the upper layer and the lower layer of the resist. As a result, when the resist exposed by the stepper is developed with a predetermined developer, a trapezoidal pattern 46 corresponding to the light intensity distribution absorbed in the resist is formed, and sufficient resolution cannot be obtained. There was a problem.
前記した如く、従来のステッパ（特にエキシマステッパ
）により１μｍ以下の微細パターンを形成しようとする
と、レジスト中に吸収されるパターンの潜像のコントラ
ストが良くないため充分な解像力を有するパターンが形
成されないという問題点があった。As mentioned above, when trying to form a fine pattern of 1 μm or less using a conventional stepper (particularly an excimer stepper), a pattern with sufficient resolution cannot be formed because the contrast of the latent image of the pattern absorbed in the resist is poor. There was a problem.
本発明はかかる点に鑑みてなされたもので、簡易な工程
により縮小投影露光によりレジスト内に形成される潜像
の改善を提供する事を目的としている。The present invention has been made in view of the above problems, and an object of the present invention is to provide an improvement in the latent image formed in a resist by reduction projection exposure using a simple process.
課題を解決するための手段
本発明は上記問題点を解決するため、半導体ウェハの一
表面に塗布されるレジスト中の感光基の濃度がレジスト
表面に多く下層部に少ないレジストを用いる事により光
リソグラフィーにより露光された後のレジストパターン
のコントラストラ向上するものである。Means for Solving the Problems In order to solve the above-mentioned problems, the present invention uses a resist coated on one surface of a semiconductor wafer in which the concentration of photosensitive groups is higher on the resist surface and lower on the lower layer. This improves the contrast of the resist pattern after exposure.
作用
本発明はレジスト中の感光基濃度をレジスト表面から下
層に向けて濃度勾配を持たせる事によりレジスト下層で
の光吸収かコントラストの良い１μｍ以下のレジストパ
ターンが精度良く形成出来る。Function The present invention makes it possible to accurately form a resist pattern of 1 μm or less with good contrast due to light absorption in the lower layer of the resist by creating a concentration gradient of photosensitive groups in the resist from the resist surface to the lower layer.
実施例
本発明の第１の実施例を第１図に示す。半導体基板１上
にホトレジストであるジアゾ系レジスト２（例えば商品
名ＭＰ１．ａｏｏ）を１．５ｐｍ厚塗布する（ａＪ。半
導体基板を裏面から望ましくは９゜°Ｃ以上たとえば１
００’Ｃでベータしながら表面から望ましくは２３°Ｃ
以下の乾燥空気で冷却すると、感光基の多い部分３と感
光基の少ない部分４が形成される（１））。その結果レ
ジスト中に含まれる感光基は加熱による架橋とレジスト
中での拡散現象によシ移動し、レジスト表面の感光基濃
度はレジスト下層部よりも多くなる。そしてこのレジス
トを縮少投影露光装置により、レチクル４を用いて紫外
光ｅを約１００ ｍ Ｊ ／ ＣΔで露光する。この時
、レジストパターン内に形成されるレチクルパターンの
潜像のコントラストはレジスト表面への入射光強度のコ
ントラストより向上する。これはレジスト内での感光基
濃度が表面から下層に向って勾配があるためレジスト下
層での光強度の吸収が小さく（内部セル効果）なるから
である。Embodiment A first embodiment of the present invention is shown in FIG. A diazo resist 2 (for example, trade name MP1.aoo), which is a photoresist, is applied to a thickness of 1.5 pm on the semiconductor substrate 1 (aJ).
Preferably 23°C from the surface while beta at 00'C
When cooled with dry air as described below, a region 3 with many photosensitive groups and a region 4 with few photosensitive groups are formed (1)). As a result, the photosensitive groups contained in the resist migrate due to crosslinking due to heating and diffusion phenomena in the resist, and the concentration of photosensitive groups on the resist surface becomes higher than that in the lower layer of the resist. Then, this resist is exposed to ultraviolet light e at about 100 mJ/CΔ using a reticle 4 using a reduction projection exposure apparatus. At this time, the contrast of the latent image of the reticle pattern formed within the resist pattern is improved more than the contrast of the intensity of light incident on the resist surface. This is because the concentration of photosensitive groups in the resist has a gradient from the surface toward the lower layer, so that absorption of light intensity in the lower layer of the resist becomes small (internal cell effect).
そして、光βの露光部を現像除去してレジストパターン
２０を形成する（Ｃ）。Then, the resist pattern 20 is formed by developing and removing the exposed portion of the light β (C).
次に本発明の基本原理を表わす式を示す。従来、フォト
・リングラフィにおけるフォト・レジストと照射光との
相互作用は、Ｄｉｌｌらが提唱したモデル（＠Ｃｈａｒ
ａｃｔｅｒｉｚａｔｉｏｎ ｏｆ ＰｏｓｉｔｉｖａＰ
ｈｏｔｏｒｅｇｉｓｔ”、アイ・イ・イ・イ トランス
オン エレクトロン デバイスズ（ＩＴＬＩｃＩｃ Ｔ
ｒａｎｓｏｎ ＩＥｌａｃｔｒｏｎ Ｄｅｖｉｃｅｓ
） ｖｏｌ Ｋ Ｄ −２２。Next, a formula expressing the basic principle of the present invention is shown. Conventionally, the interaction between the photoresist and the irradiation light in photophosphorography has been described using the model proposed by Dill et al. (@Char
activation of PositivaP
photoregist”, I.I.I. Transon Electron Devices (ITLIcIc T
ranson IElactron Devices
) vol KD-22.
＆７ Ｐ、４４５−Ｐ、 ４５２ 、 Ｊｕｌｙ １９
７５ ）が、ジアゾ系レジストの反応モデルとして広く
用いられている。これは、ジアゾ系レジストの感光基で
あるナフト・キノン・ジアジゾの濃度Ｍと、これの光吸
収効率人及び、ベース材料の光吸収効率Ｂ、及び前記感
光基の反応速度Ｇを用いて、次の様に表わす。&7 P, 445-P, 452, July 19
75) is widely used as a reaction model for diazo resists. This is calculated as follows using the concentration M of naphthoquinone diazizo, which is a photosensitive group in the diazo resist, its light absorption efficiency, the light absorption efficiency B of the base material, and the reaction rate G of the photosensitive group. It is expressed as follows.
ここで、２はレジスト表面から垂直方向の深さ、ｔは露
光開始からの時刻である。又、工は光の強度、Ｍは感光
基の濃度である。さらに、Ｄｉｌｌらによると、パラメ
ータ人、Ｂ、Ｃは次のようになる。Here, 2 is the depth in the vertical direction from the resist surface, and t is the time from the start of exposure. Further, M is the intensity of light and M is the concentration of the photosensitive group. Furthermore, according to Dill et al., the parameters Person, B, and C are as follows.
となる。ここで、工ｏはレジスト表面での光強度、τ（
ｔ）はレジストの光透過率、ｄはレジストの膜厚を表わ
す。したがって、ム、Ｂ、Ｃは厚さｄのレジストに光を
照射した場合に、光の強度を測定し、その透過率の時間
変化、いわゆるブリーチング特性を測定する事によって
得られる。becomes. Here, ko is the light intensity at the resist surface, τ(
t) represents the light transmittance of the resist, and d represents the film thickness of the resist. Therefore, when a resist having a thickness of d is irradiated with light, M, B, and C can be obtained by measuring the intensity of the light and measuring the change in transmittance over time, that is, the so-called bleaching characteristic.
一般的に広く用いられている紫外線領域でのジアゾ系レ
ジスト、例えば商品名ＭＰ２４００（シップレイ社）に
ついて、ｍＪ記Ａ、Ｂ、Ｃのパラメータを実測すると人
＝０．２７（μｍ ］ 、 Ｂ ：＝ １．７７（
−μｍ−１］ 、 Ｃ−０，００１８Ｃｃ、Ａ／ｍＪ〕
となる。For a commonly used diazo resist in the ultraviolet region, for example, trade name MP2400 (Shipley), the parameters of mJ A, B, and C are actually measured: = 0.27 (μm), B:= 1.77 (
-μm-1], C-0,0018Cc, A/mJ]
becomes.
上述したようにレジスト内での光の吸収と感光基濃度の
関係は（１）式で表わされるが、本発明においては（１
）式における感光基濃度の勾配を表面から底面に向って
分布させる事により、レジスト内での光強度の吸収を最
適化し現像後のレジストパターンの形状の改善が計れる
。As mentioned above, the relationship between light absorption within the resist and photosensitive group concentration is expressed by equation (1), but in the present invention, (1)
) By distributing the photosensitive group concentration gradient from the surface to the bottom surface, absorption of light intensity within the resist can be optimized and the shape of the resist pattern after development can be improved.
次に本発明の第２の実施例を第２図に示す。半導体基板
６上にホトレジスト（例えば商品名ＭＰ１４００）を１
．２４ｍ厚スピンコードし１００°Ｃ１２分間プリベー
クする（ａ）。次に電子ビーム照射装置により電子線９
を加速エネルギー２０ｋｅＹで１ｘ１ｏ Ｃ／ｃ遥照
射する。この時の照射量は現像液に現像されない照射量
であるが、基板からの後方散乱電子の影響により基板に
近いレジストの露光量がレジスト表面より多くその結果
感光基濃度はレジスト表面側が基板側よりも多くなって
いる。図中７が感光基濃度の多い部分、８が少ない部分
である（ｂ）。次に縮少投影露光装置により１００ｍＪ
／ｃａで露光し所望の現像液で現像すると第１の実施例
で示した如くコントラストの良いレジストパターン２１
が形成される。Next, a second embodiment of the present invention is shown in FIG. A layer of photoresist (for example, product name MP1400) is applied on the semiconductor substrate 6.
．． Spin code to a thickness of 24 m and pre-bake at 100°C for 12 minutes (a). Next, the electron beam 9 is
is irradiated at 1x1o C/c with an acceleration energy of 20keY. The irradiation amount at this time is the irradiation amount that is not developed by the developer, but due to the influence of backscattered electrons from the substrate, the exposure amount of the resist near the substrate is higher than that of the resist surface.As a result, the photosensitive group concentration on the resist surface side is higher than that on the substrate side. There are also many. In the figure, 7 is a region with a high concentration of photosensitive groups, and 8 is a region with a low concentration (b). Next, 100mJ was applied using a reduction projection exposure device.
When exposed at /ca and developed with a desired developer, a resist pattern 21 with good contrast is formed as shown in the first embodiment.
is formed.
次に本発明の第３の実施例を示す。半導体基板１０上に
ホトレジスト１１（例えば商品名ＭＰ１４００）を１．
２μｍμｍビスピンコード００’Ｃで２分間プリベーク
するｅ）。この際プリベークは必らずしもする必要はな
い。その上に感光基が主成分となる水溶液１２（例えば
ポリビニルアルコール中にジアゾニウム塩を混合したも
の）を塗布し、１００’Ｃで２分間ベーギングし感光基
をレジスト中に拡散させ、感光基の多いレジスト１４と
少ないレジスト１３とする。従来の縮小投影露光伎ｆＲ
により１５０ｍＪ／ｃＪで露光し所望の現像液で現像す
る。その結果第１の実施例で示した如く解像度の良いレ
ジストパターン２２が形成される。Next, a third embodiment of the present invention will be described. A photoresist 11 (for example, product name MP1400) is applied 1. on the semiconductor substrate 10.
Pre-bake for 2 minutes at 2 μm μm Bispin Code 00'C e). At this time, it is not necessarily necessary to pre-bake. An aqueous solution 12 containing photosensitive groups as the main component (for example, a mixture of diazonium salt in polyvinyl alcohol) is applied on top of the resist, and baguing is carried out at 100'C for 2 minutes to diffuse the photosensitive groups into the resist. A resist 14 and a small resist 13 are used. Conventional reduction projection exposure fR
The film is exposed to light at 150 mJ/cJ and developed with a desired developer. As a result, a resist pattern 22 with good resolution is formed as shown in the first embodiment.
本実施例ではレジスト上に感光基が主成分となる水溶液
を塗布したが感光基を有機溶媒に溶かしたものを用いて
も良い。In this embodiment, an aqueous solution containing a photosensitive group as a main component was applied onto the resist, but a solution containing a photosensitive group dissolved in an organic solvent may also be used.
発明の効果
以上述べてきたように、本発明によれば、きわめて容易
な工程を追加する事により縮少投影露光法におけるレジ
ストパターン内のコントラストが向上し高解像度のパタ
ーンが形成出来る事から超ＬＳＩの製造に大きく寄与す
るものである。Effects of the Invention As described above, according to the present invention, by adding an extremely easy process, the contrast in the resist pattern in the reduction projection exposure method can be improved and a high-resolution pattern can be formed. This greatly contributes to the production of
第１図、第２図、第３図はそれぞれ本発明の第１、第２
．第３の実施例のパターン形成法を示す工程断面図、第
４図は従来から行われている縮小投影露光におけるパタ
ーン形成方法を示す模式図である。
１．６，１０・・・・・・半導体基板、２，５．１１
・・・・・ホトレジスト、３．了、１４・・・・・感光
基の多い部分、４，８．１３・・・・・感光基の少ない
部分、２０．２１．２２・・・・・・露光現像後のパタ
ーン。
代理人の氏名 弁理士 粟 野 重 孝 ほか１名第１
図
４ｆ゛°−マスク上の官長、ノでター７ベーーレシスト
決面への人身１刃Ｖに分布ｅ−・虱−身↑光1, 2, and 3 are the first and second embodiments of the present invention, respectively.
．． FIG. 4 is a process sectional view showing the pattern forming method of the third embodiment, and a schematic diagram showing the pattern forming method in conventional reduction projection exposure. 1.6,10... Semiconductor substrate, 2,5.11
...Photoresist, 3. Completion, 14... Part with many photosensitive groups, 4, 8.13... Part with few photosensitive groups, 20.21.22... Pattern after exposure and development. Name of agent: Patent attorney Shigetaka Awano and 1 other person 1st
Figure 4 f゛° - The chief on the mask, the human body 1 blade V to the surface of the tar 7 beresist is distributed e-・Lice- body ↑ light
Claims (4)
く基板付近に少ないような分布になっているレジスト膜
を形成する工程と、光露光法により前記レジスト膜上に
半導体集積回路のパターンの潜像を生成する工程と、所
定の現像液により露光された前記潜像部の前記レジスト
を除去し前記レジストパターンを形成する工程とを備え
てなる微細パターン形成方法。(1) A process of forming a resist film on the surface of a semiconductor substrate in which the concentration of photosensitive groups is distributed such that the concentration of photosensitive groups is high on the substrate surface side and low near the substrate, and a pattern of a semiconductor integrated circuit is formed on the resist film using a light exposure method. 1. A method for forming a fine pattern, comprising the steps of: generating a latent image; and removing the resist in the latent image portion exposed with a predetermined developer to form the resist pattern.
ジスト膜の表面を冷却し基板側を所定の温度でベーキン
グする事によりレジスト中の感光基濃度の分布を形成す
ることを特徴とする特許請求の範囲第１項記載の微細パ
ターン形成方法。(2) A patent characterized in that a photosensitive group concentration distribution in the resist is formed by applying a resist film to the surface of a semiconductor substrate, cooling the surface of the resist film, and baking the substrate side at a predetermined temperature. A method for forming a fine pattern according to claim 1.
ジスト中に電子線を照射する事によりレジスト中の感光
基濃度の分布を形成することを特徴とする特許請求の範
囲第１項記載の微細パターン形成方法。(3) A photosensitive group concentration distribution in the resist is formed by coating a resist film on the surface of a semiconductor substrate and irradiating the resist with an electron beam. Fine pattern formation method.
ジスト膜上に感光基が主成分となる溶液を塗布し、前記
半導体基板を加熱する事により前記感光基をレジスト中
に拡散させて、前記レジスト中に感光基濃度の分布を形
成することを特徴とする特許請求の範囲第１項記載の微
細パターン形成方法。(4) applying a resist film on the surface of a semiconductor substrate, applying a solution containing a photosensitive group as a main component on the resist film, and diffusing the photosensitive group into the resist by heating the semiconductor substrate; 2. The fine pattern forming method according to claim 1, wherein a distribution of photosensitive group concentration is formed in the resist.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63255117A JPH02101468A (en) | 1988-10-11 | 1988-10-11 | Fine pattern forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63255117A JPH02101468A (en) | 1988-10-11 | 1988-10-11 | Fine pattern forming method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02101468A true JPH02101468A (en) | 1990-04-13 |
Family
ID=17274331
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63255117A Pending JPH02101468A (en) | 1988-10-11 | 1988-10-11 | Fine pattern forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02101468A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06332181A (en) * | 1993-04-30 | 1994-12-02 | Internatl Business Mach Corp <Ibm> | Resist structure and its preparation |
| US6143478A (en) * | 1997-05-20 | 2000-11-07 | Tokyo Electron Limited | Resist processing method |
| US6238844B1 (en) * | 1998-03-11 | 2001-05-29 | Applied Materials, Inc. | Process for depositing a plasma polymerized organosilicon photoresist film |
-
1988
- 1988-10-11 JP JP63255117A patent/JPH02101468A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06332181A (en) * | 1993-04-30 | 1994-12-02 | Internatl Business Mach Corp <Ibm> | Resist structure and its preparation |
| US6143478A (en) * | 1997-05-20 | 2000-11-07 | Tokyo Electron Limited | Resist processing method |
| US6514073B1 (en) * | 1997-05-20 | 2003-02-04 | Tokyo Electron Limited | Resist processing method and resist processing apparatus |
| US6238844B1 (en) * | 1998-03-11 | 2001-05-29 | Applied Materials, Inc. | Process for depositing a plasma polymerized organosilicon photoresist film |
| US6589715B2 (en) | 1998-03-11 | 2003-07-08 | France Telecom | Process for depositing and developing a plasma polymerized organosilicon photoresist film |
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