JPH017972Y2 - - Google Patents
Info
- Publication number
- JPH017972Y2 JPH017972Y2 JP11501282U JP11501282U JPH017972Y2 JP H017972 Y2 JPH017972 Y2 JP H017972Y2 JP 11501282 U JP11501282 U JP 11501282U JP 11501282 U JP11501282 U JP 11501282U JP H017972 Y2 JPH017972 Y2 JP H017972Y2
- Authority
- JP
- Japan
- Prior art keywords
- filament
- grid
- support electrode
- insulator
- support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012212 insulator Substances 0.000 claims description 6
- 238000009413 insulation Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Electron Sources, Ion Sources (AREA)
- Measurement Of Radiation (AREA)
- Microwave Tubes (AREA)
Description
【考案の詳細な説明】
この考案は真空中に於ける金属物質からのスパ
ツタによる電極間の絶縁劣化を防ぐ為の構造に関
する。[Detailed Description of the Invention] This invention relates to a structure for preventing insulation deterioration between electrodes due to spatter from metal substances in a vacuum.
周知の通り真空中では加熱温度と真空度の関係
から金属物質が蒸発して周囲に付着し電極間の絶
縁劣化を招くことがある。例えばトリウム入りタ
ングステンフイラメントを使用した電子管に於て
はフイラメントの動作温度が高いことと電子管の
製造段階に於てフイラメントが動作温度以上に加
熱されることがあること及び電子管を実際に使用
する場合長時間の高温状態にさらされることから
フイラメント自身又はその周囲の金属のうち比較
的蒸気圧が高い金属物質は短時間又は長時間に亘
り蒸発し周囲に付着する。このようにして付着し
た物質は導電性である為絶縁物に付着すると電極
間の絶縁劣化を招くことがある。 As is well known, in a vacuum, depending on the relationship between the heating temperature and the degree of vacuum, metal substances may evaporate and adhere to the surroundings, leading to deterioration of the insulation between the electrodes. For example, in an electron tube that uses a thorium-filled tungsten filament, the operating temperature of the filament is high, the filament may be heated above the operating temperature during the electron tube manufacturing process, and it takes a long time to actually use the electron tube. Because the filament itself is exposed to high temperature conditions for a long time, metal substances having a relatively high vapor pressure among the filament itself or the metal surrounding it evaporate over a short or long period of time and adhere to the surroundings. Since the substance deposited in this manner is conductive, if it deposits on an insulator, it may cause deterioration of the insulation between the electrodes.
以下第１図を参照して従来構造について述べ
る。尚ここでは一例として三極管について述べ
る。フイラメント電圧を給電する為の導入棒１と
フイラメントの変形を防止する為の支持棒２はグ
リツド支持電極３とは絶縁物４を介して絶縁され
てろう付等により固定されている。フイラメント
５は前記導入棒１及び支持棒２にアーク溶接等に
より固定されその後グリツド６が前記グリツド支
持電極３にネジ等によりフイラメント５と同軸的
に固定される。このようにして形成されたフイラ
メントとグリツド組立をここには図示しない陽極
と同軸的に位置固定することにより三極管が構成
される。ここでグリツド支持電極３のフイラメン
ト５寄り開口部９が図示の通り大きい為に製造工
程及び長時間動作中にフイラメント及びその他金
属からの蒸発物が絶縁物４全面に付着して導電性
被膜７が形成され導入棒１又は支持棒２とグリツ
ド支持電極３との絶縁が劣化し結果としてフイラ
メントとグリツドとの絶縁が劣化することとな
る。 The conventional structure will be described below with reference to FIG. Note that a triode will be described here as an example. An introduction rod 1 for supplying a filament voltage and a support rod 2 for preventing deformation of the filament are insulated from the grid support electrode 3 via an insulator 4 and fixed by brazing or the like. The filament 5 is fixed to the introduction rod 1 and the support rod 2 by arc welding or the like, and then the grid 6 is fixed coaxially with the filament 5 to the grid support electrode 3 by screws or the like. A triode is constructed by fixing the filament and grid assembly thus formed coaxially with an anode (not shown). Here, since the opening 9 of the grid support electrode 3 near the filament 5 is large as shown in the figure, evaporated substances from the filament and other metals adhere to the entire surface of the insulator 4 during the manufacturing process and long-term operation, resulting in the conductive coating 7. As a result, the insulation between the introduction rod 1 or the support rod 2 and the grid support electrode 3 deteriorates, and as a result, the insulation between the filament and the grid deteriorates.
本考案はこのような欠点を除去しいかなる状況
に於ても安定した信頼性の高い電子管を安価で且
簡単な構造で提供するものである。 The present invention eliminates these drawbacks and provides an electron tube that is stable and highly reliable under any circumstances, with an inexpensive and simple structure.
以下本考案の一実施例を第２図を参照して述べ
る。本考案の構造と従来構造である第１図との相
違点はグリツド支持電極１３のフイラメント５寄
りとなる側に複数個の穴８を設け開口部の80％以
上の面積を遮蔽したことである。ここでグリツド
支持電極１３に設けられた複数個の穴８と導入棒
１及び支持棒２は絶縁に十分なだけのすき間をも
つて同軸的に配置されている。 An embodiment of the present invention will be described below with reference to FIG. The difference between the structure of the present invention and the conventional structure shown in FIG. 1 is that a plurality of holes 8 are provided on the side of the grid support electrode 13 closer to the filament 5 to shield more than 80% of the area of the opening. . Here, the plurality of holes 8 provided in the grid support electrode 13, the introduction rod 1, and the support rod 2 are coaxially arranged with a gap sufficient for insulation.
このような構造によれば、フイラメント５寄り
の開口部面積が極めて小さくなる為に絶縁物４に
蒸発物が付着して形成される導電性被膜７の面積
が極めて小さくなりフイラメントとグリツドとの
良好な絶縁状態をいかなる状況に於ても長時間安
定に維持することができる。又本考案によればグ
リツド支持電極の開口部の形状を考えるだけで良
いので安価で且簡単な構造で良好な結果が得られ
る。尚本考案に於てグリツド支持電極に設けた複
数個の穴は第３図に示すような長穴８′としても
良いことはもちろんである。 According to such a structure, the area of the opening near the filament 5 becomes extremely small, so the area of the conductive film 7 formed by the adhesion of evaporated matter to the insulator 4 becomes extremely small, resulting in good contact between the filament and the grid. A stable insulation state can be maintained for a long time under any circumstances. Further, according to the present invention, since it is only necessary to consider the shape of the opening of the grid supporting electrode, good results can be obtained with an inexpensive and simple structure. It goes without saying that in the present invention, the plurality of holes provided in the grid support electrode may be elongated holes 8' as shown in FIG.
第１図は従来構造の断面図である。第２図は本
考案の一実施例を示す断面図であり、第３図は本
考案の他の実施例を示す断面図である。
１……導入棒、２……支持棒、３……グリツド
支持電極、４……絶縁物、５……フイラメント、
６……グリツド、７……導電性被膜、８，８′…
…穴、９……開口部、１３……グリツド支持電
極。
FIG. 1 is a sectional view of a conventional structure. FIG. 2 is a cross-sectional view showing one embodiment of the present invention, and FIG. 3 is a cross-sectional view showing another embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Introduction rod, 2... Support rod, 3... Grid support electrode, 4... Insulator, 5... Filament,
6... Grid, 7... Conductive coating, 8, 8'...
...hole, 9...opening, 13...grid support electrode.
Claims (1)
ツドを支持するグリツド支持電極とを絶縁物を介
して固着し、フイラメント取付側のグリツド支持
電極の面に前記導入棒が貫通する穴を設けグリツ
ド支持電極のフイラメント側開口部を面積で80％
以上遮蔽したことを特徴とする電子管。 A plurality of introduction rods that support the filament and a grid support electrode that support the grid are fixed via an insulator, and a hole through which the introduction rods pass is provided on the surface of the grid support electrode on the filament attachment side. 80% area of filament side opening
An electron tube characterized by being shielded as described above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11501282U JPS5920543U (en) | 1982-07-29 | 1982-07-29 | electron tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11501282U JPS5920543U (en) | 1982-07-29 | 1982-07-29 | electron tube |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5920543U JPS5920543U (en) | 1984-02-08 |
| JPH017972Y2 true JPH017972Y2 (en) | 1989-03-02 |
Family
ID=30265641
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11501282U Granted JPS5920543U (en) | 1982-07-29 | 1982-07-29 | electron tube |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5920543U (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5077576B2 (en) * | 2008-11-20 | 2012-11-21 | 株式会社Ｉｈｉ | Processing equipment |
-
1982
- 1982-07-29 JP JP11501282U patent/JPS5920543U/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5920543U (en) | 1984-02-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4297612A (en) | Electron gun structure | |
| US2411046A (en) | Electric discharge device | |
| JPH017972Y2 (en) | ||
| US1954474A (en) | Glow cathode | |
| US2898501A (en) | Getters for electron tubes | |
| US1684263A (en) | Hot-cathode device | |
| US2859371A (en) | Electron discharge device structure | |
| US1953906A (en) | Rectifier tube | |
| US3327931A (en) | Ion-getter vacuum pump and gauge | |
| US3717503A (en) | Method of constructing a vapor deposited bi-potential cathode | |
| US3551727A (en) | Thermionic converter having a low work function collector electrode | |
| JPH0216532B2 (en) | ||
| US2456540A (en) | Electrode structure for electron discharge tubes | |
| US2886733A (en) | Grid structure for electron tube | |
| US2279821A (en) | Secondary electron emissive electrode | |
| JPH0512909Y2 (en) | ||
| JPH0238925Y2 (en) | ||
| JPH024439Y2 (en) | ||
| JPH0117087Y2 (en) | ||
| JPS6345734Y2 (en) | ||
| JPH059807Y2 (en) | ||
| US3277327A (en) | X-ray diffraction tube | |
| US2838709A (en) | Gas-filled thyratron | |
| US3161798A (en) | Electrode shield | |
| JPS6113536A (en) | Cathode-ray tube |