JPH0159575B2 - - Google Patents
Info
- Publication number
- JPH0159575B2 JPH0159575B2 JP13559979A JP13559979A JPH0159575B2 JP H0159575 B2 JPH0159575 B2 JP H0159575B2 JP 13559979 A JP13559979 A JP 13559979A JP 13559979 A JP13559979 A JP 13559979A JP H0159575 B2 JPH0159575 B2 JP H0159575B2
- Authority
- JP
- Japan
- Prior art keywords
- photosensitive resin
- coating
- semiconductor substrate
- pattern
- spinner
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011347 resin Substances 0.000 claims description 43
- 229920005989 resin Polymers 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 11
- 239000012298 atmosphere Substances 0.000 claims description 9
- 239000003960 organic solvent Substances 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 description 18
- 238000000576 coating method Methods 0.000 description 18
- 238000007796 conventional method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000004381 surface treatment Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical compound [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Description
【発明の詳細な説明】
本発明は半導体装置製造におけるフオトプロセ
スの感光性樹脂膜の形成方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for forming a photosensitive resin film using a photo process in semiconductor device manufacturing.
半導体装置製造上のフオトエツチング工程にお
ける感光性樹脂の半導体基板表面への塗布方法と
しては一般にスピンナ法と呼ばれる回転塗布方法
が多く用いられている。従来法では、大気中又は
窒素雰囲気中で塗布装置のスピンナチヤツク上に
半導体基板を真空吸着して固定させその上に感光
性樹脂を数滴落下させながらスピンナチヤツクを
回転させ、遠心力により非常に薄い被膜を形成す
る。被膜の厚さは感光性樹脂の粘度及び回転速度
により決定される。それによつて形成される塗布
膜厚及び均一性は微細パターン形成の解像力に大
きく影響する。 As a method for applying a photosensitive resin to the surface of a semiconductor substrate in a photo-etching process in the manufacture of semiconductor devices, a spin coating method generally called a spinner method is often used. In the conventional method, a semiconductor substrate is fixed by vacuum suction on a spinner chuck of a coating device in the air or a nitrogen atmosphere, and a few drops of photosensitive resin are dropped onto the spinner chuck while the spinner chuck is rotated, and a very thin coating is formed by centrifugal force. form. The thickness of the coating is determined by the viscosity of the photosensitive resin and the rotation speed. The thickness and uniformity of the resulting coating film greatly affect the resolution of fine pattern formation.
しかし、スピンナ法において完全均一な膜厚が
得られるものではなく、キノンジアジド系のポジ
タイプレジストを回転数7000r・ｐ・ｍで15秒間
回転塗布し、膜厚1.35μｍを得た場合、第１図に
示すように感光性樹脂表面に放射状の塗布むらが
認められる。ここでＢ−Ｘ方向が半径方向に対応
している。これはいかなる回転数、時間を制御し
ても発生し特にポジ型の感光性樹脂に顕著であ
る。第１図Ａ−Ｂ間の放射状の塗布むらを表面あ
らさ計で走査すると、第２図に示す通り1000Å前
後の段差量がある。これらの放射状の塗布むらは
例えば微細パターンを形成するため露光量を感光
性樹脂の感度限界付近まで落した場合第３図のよ
うなパターン不良が出やすい。つまり第３図ａは
感光性樹脂をアンダ露光し現像した感光性樹脂の
パターン、第３図ｂは同図ａのＣ−Ｄ間の段面図
である。ここで、１は半導体基板、２は被エツチ
ング膜、３は感光性樹脂膜、４は感光性樹脂膜の
短絡部である。この原因を第４図ａ，ｂを用いて
説明する。第４図ａは半導体基板１上の被エツチ
ング膜２上にポジ型感光性樹脂３を従来法により
回転塗布しマスク５によつて露光するときの断面
図、第４図ｂは現像後の断面図である。つまり感
光性樹脂３の塗布むらの山の部分が感光して現像
除去される時は抜け部分６には山の膜厚部分だけ
残り、逆に塗布むらの谷の部分８はパターンは正
常に形成される。この感光性樹脂膜の６の部分が
パターン不良つまりエツチング不良を引きおこす
わけで、この塗布むらは今後の微細化、高精度の
エツチングプロセスでは非常なる問題点である。 However, it is not possible to obtain a completely uniform film thickness using the spinner method, and when a quinonediazide-based positive type resist was spin-coated at a rotational speed of 7000 rpm for 15 seconds to obtain a film thickness of 1.35 μm, as shown in Figure 1. As shown in , radial coating unevenness is observed on the photosensitive resin surface. Here, the B-X direction corresponds to the radial direction. This occurs no matter what rotation speed or time is controlled, and is particularly noticeable in positive-type photosensitive resins. When the radial coating unevenness between A and B in FIG. 1 is scanned with a surface roughness meter, there is a level difference of about 1000 Å as shown in FIG. These radial coating irregularities tend to cause pattern defects as shown in FIG. 3, for example, when the exposure amount is reduced to near the sensitivity limit of the photosensitive resin in order to form a fine pattern. That is, FIG. 3a is a pattern of a photosensitive resin obtained by under-exposing and developing the photosensitive resin, and FIG. 3b is a step view between C and D in FIG. 3a. Here, 1 is a semiconductor substrate, 2 is a film to be etched, 3 is a photosensitive resin film, and 4 is a short circuit part of the photosensitive resin film. The cause of this will be explained using FIGS. 4a and 4b. FIG. 4a is a cross-sectional view of a positive photosensitive resin 3 coated on a film to be etched 2 on a semiconductor substrate 1 by a conventional method and exposed to light using a mask 5, and FIG. 4b is a cross-sectional view after development. It is a diagram. In other words, when the peaks of the uneven coating of the photosensitive resin 3 are exposed to light and removed by development, only the film thickness of the peaks remains in the missing areas 6, and conversely, the pattern is formed normally in the valleys 8 of the uneven coating. be done. This portion 6 of the photosensitive resin film causes pattern defects, that is, etching defects, and this coating unevenness will be a serious problem in future miniaturization and high-precision etching processes.
本発明は感光性樹脂のスピンナ法の塗布の際に
生じる放射状の膜厚の塗布むらを有機溶剤雰囲気
中にさらし、感光性樹脂表面の処理を施すことに
より均一な膜厚を形成させる方法である。 The present invention is a method for forming a uniform film thickness by exposing the radial coating thickness unevenness that occurs during spinner coating of photosensitive resin to an organic solvent atmosphere and treating the surface of the photosensitive resin. .
我々は数々なる実験より感光性樹脂を回転塗布
乾燥後、有機溶剤雰囲気中にさらし、半導体基板
を回転させると感光性樹脂表面が溶流されること
を発見した。 Through numerous experiments, we discovered that when a photosensitive resin was spin-coated and dried, exposed to an organic solvent atmosphere and the semiconductor substrate was rotated, the surface of the photosensitive resin was liquefied.
以下本発明の一実施例を第５図に従い説明す
る。第５図は感光性樹脂を回転塗布してから露光
前までのプロセスを示すもので、同図９はセンダ
ー装置、１０はスピンナー装置、１１は本発明の
特徴である感光性樹脂膜の表面処理装置、１２は
オーブン（プリベーク）装置、１３はレシーバ装
置である。まずセンダー装置９から半導体基板が
スピンナー装置１０に送られ感光性樹脂滴下後、
所望の回転数、時間で回転塗布する。 An embodiment of the present invention will be described below with reference to FIG. Figure 5 shows the process from spin-coating the photosensitive resin to before exposure, in which 9 is the sender device, 10 is the spinner device, and 11 is the surface treatment of the photosensitive resin film, which is a feature of the present invention. 12 is an oven (pre-bake) device, and 13 is a receiver device. First, the semiconductor substrate is sent from the sender device 9 to the spinner device 10, and after dropping the photosensitive resin,
Apply by spinning at the desired rotation speed and time.
次にエアベアリングまたはベルトで感光性樹脂
膜の表面処理装置１１へ送る。この感光性樹脂膜
の表面処理装置の一実施例を第６図に示す。エア
ベアリングまたはベルト１４で送られて来た半導
体基板２０は、スピンナ１７に吸着され回転す
る。このときカバー１６によつておおわれた部分
をノズル１５から連続的に有機溶剤、例えば蒸気
圧の高いキシレン、トリクレンまたはシツプレイ
社のAZシンナーの蒸気を噴出させその雰囲気に
する。この状態を１分間、回転数7000rpmで保ち
再びスライダー１９により第５図のオーブン装置
１２に移動する。なお、雰囲気にさらす時間、回
転数は使用する感光性樹脂、膜厚、溶剤との希釈
比、被塗布表面の状態などにより一概には決定さ
れず、放射状の塗布むらを解消するような条件を
考慮して実験的に決定する。 Next, it is sent to a photosensitive resin film surface treatment device 11 using an air bearing or a belt. An embodiment of this photosensitive resin film surface treatment apparatus is shown in FIG. The semiconductor substrate 20 that has been sent by an air bearing or a belt 14 is attracted to a spinner 17 and rotated. At this time, the area covered by the cover 16 is made into an atmosphere by continuously spouting an organic solvent, such as xylene, trichlene, or AZ thinner manufactured by Shipley Co., which has a high vapor pressure, from the nozzle 15. This state is maintained at a rotational speed of 7000 rpm for 1 minute, and the slider 19 is again moved to the oven device 12 shown in FIG. The time of exposure to the atmosphere and the number of revolutions are not determined unconditionally depending on the photosensitive resin used, the film thickness, the dilution ratio with the solvent, the condition of the surface to be coated, etc., but the conditions that eliminate radial coating unevenness are determined. Determine experimentally with consideration.
本発明の方法で表面処理した感光性樹脂膜の表
面を表面あらさ計で走査した結果を第７図に示
す。この結果から明らかな様に従来の方法による
第２図の段差量1000Å前後から10Å程度に減少し
た。 FIG. 7 shows the results of scanning the surface of a photosensitive resin film surface-treated by the method of the present invention using a surface roughness meter. As is clear from this result, the amount of step difference was reduced from about 1000 Å shown in FIG. 2 by the conventional method to about 10 Å.
本発明の特徴とする点は、スピンナ法による回
転塗布乾燥した半導体基板上の膜厚の塗布むらを
有機溶剤雰囲気によりかつ回転により均一に溶流
させる点で、第６図に示すようにノズル１５によ
つて雰囲気作るのみでなく、その手法はいろいろ
考えられ、カバー１６内部に有機溶剤だめを設け
そこに有機溶剤を満たすことも良く、効果を更に
上げるため雰囲気加熱を用いることも可能であ
る。 The feature of the present invention is that the unevenness in coating thickness on a dried semiconductor substrate by spin coating using a spinner method is uniformly dissolved by rotation in an organic solvent atmosphere, and as shown in FIG. In addition to creating an atmosphere by using the method, various methods can be considered, and it is also possible to provide an organic solvent reservoir inside the cover 16 and fill it with organic solvent, and to further improve the effect, it is also possible to use atmosphere heating.
本実施例によれば、前述のように感光性樹脂の
塗布むらの段差量は10Å前後となり非常に均一な
感光性樹脂膜の形成ができ、アンダ露光時におい
て膜厚変動にもとずくフオトエツチング用パター
ンの変動が除去され、微細パターンにおけるフオ
トエツチング工程の歩留りを大きく向上させ得
た。なお第８図に第１図と同様な塗布条件で感光
性樹脂塗布後、本発明である有機溶剤雰囲気中で
7000rpm、１分間溶流させた感光性樹脂を第３図
と同条件で露光現像したパターンを示すがパター
ン短絡は解消している。 According to this example, as mentioned above, the level difference in the coating unevenness of the photosensitive resin is around 10 Å, making it possible to form a very uniform photosensitive resin film, and to prevent photoetching based on film thickness fluctuations during underexposure. This eliminates variations in the pattern used, and greatly improves the yield of the photoetching process for fine patterns. Figure 8 shows that after coating the photosensitive resin under the same coating conditions as in Figure 1, it was coated in an organic solvent atmosphere according to the present invention.
Figure 3 shows a pattern obtained by exposing and developing a photosensitive resin melted at 7000 rpm for 1 minute under the same conditions as in Figure 3, but the pattern short circuit has been resolved.
なお、本発明ではキノンジアジド系のポジ型レ
ジストで説明したが他の種類のポジ型・ネガ型の
感光性樹脂にも同様の効果が得られた。 Although the present invention has been described using a quinonediazide-based positive resist, similar effects were obtained with other types of positive and negative photosensitive resins.
以上のごとく本発明によれば、感光性樹脂膜の
膜厚が均一となり、微細パターン形式が容易とな
り、本発明の工業的価値は高い。 As described above, according to the present invention, the thickness of the photosensitive resin film becomes uniform, and the formation of fine patterns becomes easy, and the industrial value of the present invention is high.
第１図は従来の方法による感光性樹脂表面の塗
布むらを示す顕微鏡写真、第２図は第１図Ａ−Ｂ
線に沿つて測定した感光性樹脂の段差量を示す
図、第３図ａは従来の方法による感光性樹脂のパ
ターンの顕微鏡写真、同図ｂは同パターンの一部
断面図、第４図ａ，ｂはパターン短絡のプロセス
フロー断面図、第５図は本発明の感光性樹脂膜の
形成方法のプロセスブロツク図、第６図は本発明
の一実施例に用いた感光性樹脂膜の表面処理装置
の構成図、第７図は本発明の方法による感光性樹
脂膜の段差量を示す図、第８図は本発明による感
光性樹脂のパターンの顕微鏡写真である。
１０……スピンナー装置、１１……感光性樹脂
膜の表面処理装置、１５……ノズル、１７……ス
ピンナー、２０……半導体基板。
Figure 1 is a micrograph showing uneven coating on the surface of photosensitive resin by the conventional method, Figure 2 is Figure 1 A-B
A diagram showing the amount of step difference in photosensitive resin measured along a line, Figure 3a is a micrograph of a pattern of photosensitive resin by a conventional method, Figure b is a partial cross-sectional view of the same pattern, Figure 4a , b is a cross-sectional view of the process flow for pattern short circuiting, FIG. 5 is a process block diagram of the method for forming a photosensitive resin film of the present invention, and FIG. 6 is a surface treatment of the photosensitive resin film used in an embodiment of the present invention. FIG. 7 is a diagram showing the structure of the apparatus, FIG. 7 is a diagram showing the amount of step difference in the photosensitive resin film according to the method of the present invention, and FIG. 8 is a microscopic photograph of the pattern of the photosensitive resin according to the present invention. DESCRIPTION OF SYMBOLS 10...Spinner device, 11...Surface treatment device for photosensitive resin film, 15...Nozzle, 17...Spinner, 20...Semiconductor substrate.
Claims (1)
光性樹脂を乾燥せしめ、その後有機溶剤雰囲気中
で上記半導体基板を回転させ上記感光性樹脂を溶
流させることを特徴とした感光性樹脂膜の形成方
法。1. A photosensitive resin film characterized in that a photosensitive resin is applied onto a semiconductor substrate, the photosensitive resin is dried, and then the semiconductor substrate is rotated in an organic solvent atmosphere to cause the photosensitive resin to flow. Formation method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13559979A JPS5659237A (en) | 1979-10-19 | 1979-10-19 | Preparation of photosensitive resin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13559979A JPS5659237A (en) | 1979-10-19 | 1979-10-19 | Preparation of photosensitive resin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5659237A JPS5659237A (en) | 1981-05-22 |
| JPH0159575B2 true JPH0159575B2 (en) | 1989-12-18 |
Family
ID=15155579
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13559979A Granted JPS5659237A (en) | 1979-10-19 | 1979-10-19 | Preparation of photosensitive resin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5659237A (en) |
-
1979
- 1979-10-19 JP JP13559979A patent/JPS5659237A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5659237A (en) | 1981-05-22 |
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