JPH01502706A - semiconductor components - Google Patents

semiconductor components

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Publication number
JPH01502706A
JPH01502706A JP62502953A JP50295387A JPH01502706A JP H01502706 A JPH01502706 A JP H01502706A JP 62502953 A JP62502953 A JP 62502953A JP 50295387 A JP50295387 A JP 50295387A JP H01502706 A JPH01502706 A JP H01502706A
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zone
metallization
semiconductor component
emitter
semiconductor
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トウルスキイ，ヴェルナー
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セミクロン　エレクトロニク　ゲーエムベーハー
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/01024—Chromium [Cr]
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01047—Silver [Ag]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
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    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
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    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Thyristors (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるため要約のデータは記録されません。 (57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 半　導　体　構　成　要　素 本発明は、間に少なくとも２つのｐｎＪ＊合を有して順々に位置する層状ゾーン と、それら２つの接合の少なくとも１方のエミッタゾーンを形成する外側ゾーン において１つの構造、すなわち、エミッタゾーンの部分とそれと隣接しているベ ースゾーンにおけるエミッタゾーン間の部分とは共通の１表面を形成しており、 ベースゾーンの部分の上には第１の金属被覆が、そしてエミッタゾーンの部分の 上には第２の金属被覆があり、それの上には連続した接触プレートが取付けられ ているという構造を６９だ・１つの半導体本体部を有する半導体構成要素に関す る。[Detailed description of the invention] Semiconductor structure elements The present invention provides layered zones located one after the other with at least two pnJ* joints between them. and an outer zone forming an emitter zone of at least one of those two junctions. in one structure, i.e. part of the emitter zone and the adjacent base. The source zone forms a common surface with the part between the emitter zones, a first metallization over a portion of the base zone and a first metallization over a portion of the emitter zone; There is a second metallization on top, and a continuous contact plate is mounted on top of it. 69. Concerning a semiconductor component having one semiconductor body. Ru.

いくつかのａｕｒｓｔｉｉ域を有する半導体本体部を有する半導体要素において は、そ゛れの接触電極は複数の電流導通部分との接触のため、にしか・るべく分 割されている。そのようないわゆる電゛極構造の形成とそれの接触は１例えば２ 極のトランジスタとか、枝分れした制御電極を有する周波数サイリスタと、か、 ゲートによつてｌ！断されうるサイリスタ（ｌｆｉＴＯ−サイリスタ）において 必要とされる。In a semiconductor element having a semiconductor body with several aurstii regions Because the contact electrode is in contact with multiple current-carrying parts, it should be separated as much as possible. It is divided. The formation of such a so-called electrode structure and its contact are 1 e.g. 2 pole transistors, frequency thyristors with branched control electrodes, etc. By the gate! In a thyristor that can be disconnected (lfiTO-thyristor) Needed.

部分と部分とが互いに入゛つ組んで別々の極とな９た電極構造のいくつかが公知 ′である、。Some electrode structures are known in which parts are interwoven with each other to form separate poles. ′.

これらは短絡を防止するζ特別な方策を必要としている。電極部分の寸法の小型 −化、つまり分割の増大化と共に、そのミクロ的構造はより緻密となり、そのよ うな配置構造を作り出すための処理技術や装置に対しての要求が厳しくなる。These require special measures to prevent short circuits. Small size of electrode part -, that is, as the division increases, its microstructure becomes more dense and its microstructure becomes more dense. The requirements for processing technology and equipment to create such an arrangement will become stricter.

このような構造体を、ボンディングで、またはばね力による押圧力で、接触片と 、または電流導通部分と結合することが公知である。ｔＲ触片としてはモリブデ ンてできた板状部品も用いられる。Such a structure is bonded to the contact piece by bonding or by pressing force from a spring force. , or to be coupled with a current conducting part. Molybde is used as a tR tentacle. Plate-shaped parts made from aluminum are also used.

公知の、抑圧接触の、遮断可能なパワー用半導体構成要素（ＧＴＯ−サイリスタ 、　ＧＴＯ−トランジスタ）では。The known suppression contact, interruptible power semiconductor component (GTO-thyristor) , GTO-transistor).

エミッタゾーンの金属被覆とベースゾーンの金属被覆が、電極構造の部分（複数 ）として、１つの面内において同じ材料厚さで配置されている。そこではエミッ タゾーンのすべての部分はモリブデンでできた１つの連続した接触片と結合され ている。この接触片は結合面において、ベースゾーンの金属被覆には触れないよ うに、接触用突起部でできたしかるべき形の模様を有している。このような構造 は、接触片の構造実現上の制限とか、それをエミッタの形に合わせる精度の限界 があるゆえに、任意に応用されうるものでない。The metallization of the emitter zone and the metallization of the base zone are part(s) of the electrode structure. ) are arranged with the same material thickness in one plane. There, Emi All parts of the Tazone are connected to one continuous contact piece made of molybdenum. ing. This contact piece should be placed on the mating surface so that it does not touch the metal coating of the base zone. It has an appropriately shaped pattern made of contact protrusions. Structure like this This is due to limitations in realizing the structure of the contact piece, and limitations in the accuracy of matching it to the shape of the emitter. Therefore, it cannot be applied arbitrarily.

他の公知の押圧力接触の、遮断されうる構造要素においては、ベースゾーンの金 属被覆はエミッタゾーンの金属被覆よりも深く位置していて、後者が接触するた めに平らな接触片が設けられている。この構造は。In other known pressure contact structural elements that can be interrupted, gold in the base zone The metal coating is located deeper than the metal coating in the emitter zone, and the latter is in contact with the metal coating. A flat contact piece is provided for this purpose. This structure is.

ベースゾーンの金属被覆の形成のための極めて大きな処理上の出費を必要とする ８゜ 以上２つの公知の構造力ｅ式はなＳｔつの共通の欠点を有する。エミッタの金属 −被覆のストリップ状の部分の各々は全面的に接触片、を例えばモリブデンのデ ィスクの１つの領域に連接的に結合されている０例えばＧＴＯ−サイリスタでの 遮断勤（作の際には、それまで流れていた順方向電流の一部が負のゲート電極に よりてゲートへと引き寄せられる０、エミッタの金属被覆と接触片の間の結合の 抵抗が極め゛て小さいために、エミッタゾーンの一部がそれに負の４を圧がかけ られてから動作するまでの時間が、遮断動作を左右するパラメータの公差がある ことの故に一足しない、このことは、遮断されつるアノード電流が制限される。Requires extremely high processing expenditures for the formation of metallization in the base zone 8゜ The above two known structural force equations have two common drawbacks. emitter metal - each strip-like part of the coating has a contact strip, for example of molybdenum, on its entire surface; 0, for example in a GTO-thyristor, which is connected serially to one area of the disk. During cut-off operation (when operating, a portion of the forward current that had been flowing until then is transferred to the negative gate electrode) 0, which is attracted to the gate due to the coupling between the metallization of the emitter and the contact piece. The resistance is so small that part of the emitter zone has a negative 4 pressure applied to it. There are tolerances in the parameters that affect the shutoff operation, such as the time it takes from when it is shut off to when it operates. Because of this, the anode current is cut off and the anode current is limited.

という不都合な結果を生ずる。This results in an inconvenient result.

研究の結果、接触片の各領域と対応するエミッタの金属被覆の部分との間に決っ た電気抵抗をおくことによって上記の欠点が大いに排除されうることが判明した 。この場合、接触片から金属被ＩＥ分の中央点までの間の抵抗は、金属被覆の縁 までの間゛よりは大きくあるべきである。これにより、半導体構成要素の並列接 続にＳいていわゆるバラスト抵抗を利用する場合に似て、上記の不都合な公差を 保証することが可能となる。As a result of the study, it has been determined that there is a It has been found that the above-mentioned drawbacks can be largely eliminated by placing an electrical resistance . In this case, the resistance from the contact piece to the center point of the metallized IE is the edge of the metallized It should be larger than ゛. This allows for parallel connection of semiconductor components. Next, similar to the case of using a so-called ballast resistor, the above-mentioned unfavorable tolerance can be avoided. It becomes possible to guarantee this.

本発明は、エミッタの金属被覆に３いて、エミッタゾーンの部分が決った抵抗を 経て接続部品例えば接触片と結合されているようにすることにょつて、構造体に なつた電極を有する。押圧接触の、遮断されうる半導体構成要素の制御特性を改 善することを目的とする。この目的の解決策は、当初述べた半導体構成要素の場 合、請求のａ囲第１項の特徴の部分に記載しであるとおりである。有利ないくつ かの構造の仕方が請求の範囲第２項から第９項までに記載しである。The present invention is characterized in that the metallization of the emitter has a defined resistance in the emitter zone. by connecting the connecting parts, e.g. contact pieces, to the structure. It has a bent electrode. Modifying the control characteristics of a semiconductor component that can be interrupted by pressure contact The purpose is to do good. A solution for this purpose is the case of the semiconductor components originally mentioned. In this case, it is as described in the characteristic part of paragraph a, paragraph 1 of the claim. advantageous number This structure is described in claims 2 to 9.

図面で示している実施例を用いて以下に本発明の詳細な説明する０図面はＧＴＯ −サイリスタでの円板形の半導体本体部とその上にある接触片の配置とを概略図 式１つの高抵抗のｎ５の中間ゾーンｌと、それにそれぞれが隣接するｐｌＪのゾ ーン２．３と、制御ベースゾーンの役をするゾーン２の中に入れ込まれて配置さ れているエミッタゾーン部分４とで成る半導体本体部Ｉは、接続されうる半導体 整流器要素の普通の構造方式を示している０両方の機能領域つまり制御電流領域 と負荷電流領域は、それぞれに、ストリップ状の分割構造になって相変互して並 んで配置され、−緒になって半導体本体部工の両方の主たる面の一方を形成して いる。制御電流領域のストリップ状部分、つまり２つの相隣接するエミッタゾー ン部分４の間にあるベースゾーンの部分２ａの各々は金属被覆６を有している。The invention will be explained in detail below using an embodiment shown in the drawings. - Schematic diagram of the disk-shaped semiconductor body and the arrangement of the contact pieces on it in a thyristor; Equation One high resistance intermediate zone l of n5 and each adjacent zone of plJ zone 2.3 and is placed within zone 2, which serves as the control base zone. The semiconductor body I consists of an emitter zone portion 4 which is 0 which shows the usual construction scheme of rectifier elements in both functional areas, i.e. in the control current area. and the load current area are each arranged in a strip-like divided structure, alternating with each other. and together form one of both principal surfaces of the semiconductor body part. There is. The strip-like part of the control current region, i.e. the emitter zone adjacent to the two phases. Each of the parts 2a of the base zone between the ring parts 4 has a metallization 6.

このベースゾーンの金属被覆６は絶縁層７で覆われていて、この絶縁層はこの構 造体の抑圧接触に際して、接触押圧力がおよぶベースゾーンの金属被覆６を完全 に覆うに適するように形成されている、絶縁層７はベースゾーン部分２ａとエミ ッタゾーン部分４との間て表面上において生ずるｐｎ−接合部のそれぞれにオー バーラツプしている。The metallization 6 of this base zone is covered with an insulating layer 7, which in this structure When the structure is pressed into contact, the metal coating 6 of the base zone where the contact pressure is applied is completely removed. The insulating layer 7 is formed to be suitable for covering the base zone portion 2a and the emitter. An overpass is applied to each of the pn-junctions that occur on the surface with the outer zone portion 4. It's burlap.

エミッタゾーン部分４と絶縁層７の自由表面は、第２の、エミッタ金属被覆と称 される接触Ｎ８によりて覆われている。The free surface of the emitter zone portion 4 and the insulating layer 7 is referred to as a second, emitter metallization. It is covered by contact N8.

エミッタ金属被覆８のテーブル形の載せ面領域８Ｃは、接触片ｌＯのための接触 面を形成している。接触片１０は、半導体構造要素の組み付けの際に、それの平 らな下面が当って領域８Ｃ上に押圧される０本発明による、金属被覆６．８と絶 縁層７と１部分的にのみ金属被覆８と当っている接触片ｌＯの配置の仕方によれ ば、接触片ｌＯとエミッタゾーンの部分４との間に、負荷電流路に応じてそのつ と決定される抵抗が極めて容易に形成できる。この抵抗Ｒは、接触片１０と絶縁 層７の端部との間の部分抵抗Ｈ０と、この端部からそれぞれの場合のエミッタゾ ーンの部分４の対称面まての間の部分抵抗Ｒ２てなっている０部分抵抗Ｒ３とＲ えとで成る抵抗Ｒを決めるについては、エミッタゾーンの部分４の輻が選定でき 、またある限度内てならばベースゾーンの金属被１６の輻も選定でき、それによ って半導体表面での絶縁！＃７のカバー範囲が定まる。抵抗はなお、エミッタの 金属被覆８の厚さと材ｊ！ｊ構成によっても決まる。The table-shaped bearing area 8C of the emitter metallization 8 provides a contact for the contact piece lO. forming a surface. The contact piece 10 can be used to flatten the semiconductor component during assembly. The metal coating 6.8 according to the present invention is pressed onto the region 8C by contacting the flat lower surface. Due to the way in which the contact strip 10 is arranged, which only partially contacts the edge layer 7 and the metallization 8. For example, between the contact piece lO and the part 4 of the emitter zone, there is a A resistance determined as follows can be formed very easily. This resistance R is insulated from the contact piece 10. The partial resistance H0 between the end of layer 7 and from this end the emitter voltage in each case The zero partial resistance R3 and R between the plane of symmetry of the part 4 of the horn and the partial resistance R2 To determine the resistance R, the radius of the emitter zone part 4 can be selected. , the convergence of the metal sheath 16 in the base zone can also be selected within certain limits; Insulation on the semiconductor surface! The coverage area of #7 is determined. The resistance is still Thickness and material of metal coating 8! It also depends on the j configuration.

絶縁Ｍ７の材料としては、無機化合物Ｓｉｎ、　Ｓｉｎ、。The material of the insulation M7 is an inorganic compound Sin.

Ｓｉ３Ｎ４およびＡｉ、Ｏ，、そしてまたシリケートベースのガラス、例えば亜 鉛・ポロン・シリケートガラスやりんガラスが適している。また、ポリイミドで の有機質層でも良好な成績が得られた。Si3N4 and Ai, O, and also silicate-based glasses, e.g. Lead, poron, silicate glass, and phosphor glass are suitable. Also, polyimide Good results were also obtained for the organic layer.

絶縁層７の厚さは少なくとも０．１μ麿あるべきで。The thickness of the insulating layer 7 should be at least 0.1μ.

０．５〜３０＃Ｌ■であるのが望ましい。It is desirable that it is 0.5 to 30 #L■.

ベースゾーンの金属被覆６の材料としては、例えばアルミニウム、またはアルミ ニウム、クロム、ニッケル、銀での複数金属の積層体が利用され′る。これによ れば、ベースゾーン部分のこの金属での覆いがその中で生ずる横方向の電圧降下 を可能な限り小さく保つために高い導電性を有しなければならないという要求が 満たされる。The material of the metal coating 6 in the base zone may be aluminum or aluminum, for example. Multi-metal stacks of aluminum, chromium, nickel, and silver are used. This is it If so, this metallic covering of the base zone will reduce the lateral voltage drop that occurs within it. There is a requirement to have high electrical conductivity in order to keep the It is filled.

エミッタの金属被ａｌＩ８の材料としては、ニッケルとクロムのまたはそれらを 含む合金が適している。ニッケルの部分が３５〜６０重量％の範囲にあるクロム ・ニッケル合金が用いられるのか望ましい、ニッケルが４０重量％、残りがクロ ムであるクロム・ニッケル合金で良好な成績が得られた。Materials for the emitter metal AlI8 include nickel and chromium or their combinations. Alloys containing Chromium with a nickel content ranging from 35 to 60% by weight ・Is it preferable to use a nickel alloy, 40% by weight of nickel and the rest of chrome? Good results were obtained with the chromium-nickel alloy, which is a chromium-nickel alloy.

エミッタの金属被覆８はニッケルの代りに酸化珪素を含んでいてもよい。The emitter metallization 8 may also contain silicon oxide instead of nickel.

エミッタの金属被ＦＩ８の厚さは少なくともｘｇ嘗あるべきで、３〜３０μ■で あるのが望ましい。The thickness of the emitter metal coating FI8 should be at least xg, and should be between 3 and 30 μ■. It is desirable to have one.

金属被ＷＩ６，８は例えば蒸着とかスパッタリングで生成され得るが、それに続 いての熱的処理段階てなお、下地材料に強固に結合される。ベースゾーンの金属 被覆６とエミッタゾーンの部分４との間の距離は少なくとも５終１あるべきであ るが、　５００ＩＬｓまであってもよい。The metal coverings WI6, 8 can be produced, for example, by vapor deposition or sputtering, but the subsequent Even after the subsequent thermal treatment step, it is still firmly bonded to the underlying material. base zone metal The distance between the coating 6 and the part 4 of the emitter zone should be at least 5. However, it may be up to 500 ILs.

本発明による半導体本体部の構造での典型的諸値は、エミッタゾーンの部分４の 幅については２００μｍこれら部分の対称面間距離については６００ＩＬｍ、ベ ースゾーンの金属被覆６の輻については２００１Ｌｍ、ベースゾーンの金属被覆 の輻については８１Ｌｍ、絶縁１ｆ！７の厚さについては５ＪＬ−、そして、エ ミッタの金属被覆８の厚さについては６μ−である、ベースの金属被覆はアルミ ニウムで、そして、エミッタの金属被覆Ｌｔ、　例Ｌｔｉニッケルが４０重量％ で残りがクロムのニッケル・クロム合金でてきている。Typical values for the structure of the semiconductor body according to the invention are: The width is 200μm, the distance between the symmetry planes of these parts is 600ILm, and the base 2001Lm for the convergence of metal coating 6 in the base zone, metal coating in the base zone The radiation is 81Lm, insulation 1f! 5JL- for the thickness of 7, and E The thickness of the metallization 8 of the transmitter is 6μ-, the metallization of the base is aluminum and metallization of the emitter Lt, e.g. Lti nickel 40% by weight The rest is chromium, a nickel-chromium alloy.

上記のような典型的構造のＧＴＯ−サイリスタの遮断されつるアノード電流は公 知の構造方式でのそれに比べると約ＳＯＸ大きい。The blocked anode current of a GTO-thyristor with a typical structure as above is publicly known. Compared to the knowledge structure method, it is about SOX larger.

本発明による半導体構成要素を製造するためには、前処理した面積の大きい、望 ましくはｎ型の半導体出口側円板が両側においてドーピングされてｐｎｐ　８層 体１．２．３が作られる。それに続いてマスキングプロセスが用いられてエミッ タゾーンの部分４の模様が作られる。その後には、さらに１回のマスキングが用 いられてベースゾーン部分２ａに金属被覆６が施される。それに続いては全面が 、例えば半導体材料の化合物でできた絶縁層７で被覆される。それに続いての選 択的エツチング段階で、エミッタゾーンの部分の全体は露出され、残っている絶 縁層は依然としてベースゾーンの部分と、それに近接するエミッタゾーンの部分 の間のゲート接合部とを覆っている。In order to produce semiconductor components according to the invention, a pretreated large area, desired Preferably, the n-type semiconductor exit side disk is doped on both sides to form a pnp 8 layer Body 1.2.3 is created. Subsequently, a masking process is used to The pattern for part 4 of the tazone is created. After that, one more masking step is required. Then, a metal coating 6 is applied to the base zone portion 2a. Following that, the entire surface , for example, with an insulating layer 7 made of a compound of semiconductor material. The subsequent selection During the selective etching step, the entire portion of the emitter zone is exposed and the remaining The edge layer is still part of the base zone and the adjacent part of the emitter zone. covering the gate junction between the two.

このような方法で得られた、エミッタゾーンの部分４の上に例えばストリップ状 に窓がおいているという半導体本体部上に構成された保護被覆の上に、連続して いたエミッタゾーンの部分のすべてを連結するような第２の金属被覆、すなわち エミッタの金属被覆８が１例えば蒸着によって取付けられる。そうするとこの金 属被覆は、エミッタゾーンの部分の上では段付きで落ち込んだ形を、そしてそれ ぞれの金属被覆６の上ては自由な蔵置面８ｃを有してテーブル状に持ち上つた形 をなしている。On the part 4 of the emitter zone obtained in this way, for example, a strip-shaped Continuously cover the protective coating formed on the semiconductor body in which the window is placed. A second metallization which connects all the parts of the emitter zone that were A metallization 8 of the emitter is applied, for example by vapor deposition. Then this money The cladding has a stepped and depressed shape above the emitter zone, and The top of each metal coating 6 has a free storage surface 8c and is raised like a table. is doing.

半導体本体部のこの外面接触層の上に接触プレートｌＯが載せられ、この接触プ レートはそれの平らな当り面で、エミッタの金属被覆８のすべてのテーブル状領 域８ｃ上に電気導通結合状態で載り、半導体構成要素が電極構造体上に組み付け られる際に押圧される。A contact plate lO is placed on this outer contact layer of the semiconductor body, and this contact plate The rate covers all the table-like areas of the metallization 8 of the emitter with its flat contact surface. The semiconductor component is mounted on the electrode structure in an electrically conductive manner on the region 8c. It is pressed when it is pressed.

それによつて、それの下にある分割の程度には関係なしに、１つの文句なしに押 圧接触可能のエミッタ電極構造体が得られ、そこにおいては、前述のようなエミ ッタの金属被覆の部分の構成の仕方に起因して、エミッタゾーンの部分の遮断時 間においての公差を補償するために決まった抵抗を配置することが特に容易な方 法によって達成され、したかって、この種の半導体構成要素の遮断動作の所望さ れた改善か実現する。Thereby, one can be pushed without complaint, regardless of the degree of division underlying it. A pressure-contactable emitter electrode structure is obtained, in which the emitter as described above is Due to the way the metallized parts of the emitter are configured, when parts of the emitter zone are cut off. It is especially easy to place a fixed resistor to compensate for tolerances between Therefore, the desired disconnection behavior of semiconductor components of this type is Realize the improvements that were made.

国際調査報告 ＡＮＮＺス−＝ｏ゛二ＫＥＩ：ζＴＥＦｔ：Ｊ入−：工Ｃ二＋１−シー５ＺｋＲ ＣＥミＲＥ？ＣＲτＣＨＩＴＣｒ　ｍ６ｒ＠　ｃ＊ｔ＋ａｉ＝ｓ　ａｅｅｕ＝　 ＝ｊ−ｉ意　ａｒ、＝ａｙ　！international search report ANNZ Su-=o゛2KEI:ζTEFt:J enter-:Eng C2+1-C5ZkR CE MI RE? CRτCHITCr m6r@c*t+ai=s aeeu= =j-i meaning ar, =ay!

Claims (9)

【特許請求の範囲】[Claims] １．間に少なくとも２つのｐｎ接合を有して順々に位置する層状ゾーン（１，２ ，３，４）と それら２つの接合の少なくとも１方のエミッタゾーンを形成する外側ゾーンにお いて１つの構造、すなわち、エミッタゾーンの部分（４）とそれと隣接している ベースゾーン（２）におけるエミッタゾーン問の部分（２ａ）とは共通の一表面 を形成しており、ベースゾーンの部分（２ａ）の上には第１の金属被覆（６）が 、 そしてエミッタゾーンの部分（４）の上には第２の金属被覆（８）が存在し、そ れの上には連続した接触プレート（１０）が取付けられているという構造を有す る１つの半導体木体部（Ｉ）を有する半導体構成要素において、 第１の金属被覆（６）の各々の上に、ベースゾーンの部分（２ａ）とそれに隣接 するエミッタゾーンの部分（４）との間のｐｎ接合部の各々の上まで伸びている 絶縁性保護層（７）が取り付けれれており、第２の金属被覆（８）は、連続して いて保護層（７）とエミッタゾーンの部分（４）とを覆う電極として配置されて おり、 平らな接触面を有して連続している接触プレート（１０）が、ベースゾーンの部 分（２ａ）上の第２の金属被覆（８）のテーブル形の面（８ｃ）上に載っており 、第２の金属被覆（８）の形状寸法は、接触プレート（１０）の接触面とそれの 近傍にあるエミッタゾーンの部分（４）の対称面との間のこの金属被覆の横方向 の電圧降下が、そのような各場所において、公称電圧下で動作したとき少なくと も１０ｍＶはあるように決められていることを特徴とする半導体構成要素。1. Layered zones (1, 2) located one after the other with at least two pn junctions between them , 3, 4) and in the outer zone forming the emitter zone of at least one of those two junctions. and one structure, i.e. part (4) of the emitter zone and its adjacent A common surface with the part (2a) between the emitter zone and the base zone (2). A first metal coating (6) is formed on the base zone portion (2a). , And above the emitter zone part (4) there is a second metallization (8), which It has a structure in which a continuous contact plate (10) is attached on top of the contact plate. In a semiconductor component having one semiconductor body (I), On each of the first metallizations (6), a portion (2a) of the base zone and adjacent thereto; (4) of the emitter zone extending over each of the p-n junctions between the An insulating protective layer (7) is applied and the second metallization (8) is continuously is arranged as an electrode covering the protective layer (7) and the part (4) of the emitter zone. Ori, A continuous contact plate (10) with a flat contact surface forms part of the base zone. rests on the table-shaped surface (8c) of the second metallization (8) on the portion (2a); , the geometry of the second metallization (8) is similar to that of the contact surface of the contact plate (10). The lateral direction of this metallization between the plane of symmetry of the part (4) of the emitter zone in the vicinity At each such location, the voltage drop when operating under nominal voltage is at least A semiconductor component characterized in that the voltage is determined to be 10 mV. ２．絶縁性の保護層（７）として半導体材料の無機化合物が用いられている請求 の範囲第１項に記載の半導体構成要素。2. Claim in which an inorganic compound of semiconductor material is used as the insulating protective layer (7) A semiconductor component according to scope 1. ３．半導体材料の無機化合物として酸化珪素、二酸化珪素、窒化珪素またはシリ ケートベースのガラスが用いられている請求の範囲第２項に記載の半導体構成要 素。3. Silicon oxide, silicon dioxide, silicon nitride or silicon are used as inorganic compounds in semiconductor materials. The semiconductor component according to claim 2, in which a glass based on a glass base is used. Basic. ４．絶縁性の保護層（７）として酸化アルミニウムの層が用いられている請求の 範囲第１項に記載の半導体構成要素。4. Claims in which a layer of aluminum oxide is used as the insulating protective layer (7) A semiconductor component according to scope 1. ５．絶縁性保護層（７）としてポリイミドの有機質層が用いられている請求の範 囲第１項に記載の半導体構成要素。5. Claims in which an organic layer of polyimide is used as the insulating protective layer (7) A semiconductor component according to item 1. ６．第２の金属被覆（８）の材料としてニッケルとクロムの、またはそれらを含 んだ合金が用いられている請求の範囲第１項に記載の半導体構成要素。6. The material of the second metal coating (8) is nickel and chromium or contains them. A semiconductor component according to claim 1, in which a solder alloy is used. ７．第２の金属被覆（８）の材料としてニッケルの部分が３５〜５０重量％であ るニッケル・クロム合金が用いられている請求の範囲第６項に記載の半導体構成 要素。7. As the material of the second metal coating (8), the nickel portion is 35 to 50% by weight. The semiconductor structure according to claim 6, in which a nickel-chromium alloy is used. element. ８．第２の金属被覆（８）の材料として酸化珪素のクロムの合金が用いられてい る請求の範囲第１項に記載の半導体構成要素。8. A chromium alloy of silicon oxide is used as the material of the second metal coating (8). A semiconductor component according to claim 1. ９．第２の金属被覆（８）の厚さが少なくとも１μｍ、望ましくは３〜３０μｍ である請求の範囲第１項ないし第８項のいずれか１項に記載の半導体構成要素。9. The thickness of the second metallization (8) is at least 1 μm, preferably from 3 to 30 μm A semiconductor component according to any one of claims 1 to 8.
JP62502953A 1986-05-14 1987-05-12 semiconductor components Pending JPH01502706A (en)

Applications Claiming Priority (2)

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DE3301666A1 (en) * 1983-01-20 1984-07-26 Brown, Boveri & Cie Ag, 6800 Mannheim METHOD FOR PRODUCING A MULTI-LAYER CONTACT METALIZATION
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