JPH01502631A - Electrical insulation method for large area electrode body - Google Patents
Electrical insulation method for large area electrode bodyInfo
- Publication number
- JPH01502631A JPH01502631A JP63502060A JP50206088A JPH01502631A JP H01502631 A JPH01502631 A JP H01502631A JP 63502060 A JP63502060 A JP 63502060A JP 50206088 A JP50206088 A JP 50206088A JP H01502631 A JPH01502631 A JP H01502631A
- Authority
- JP
- Japan
- Prior art keywords
- masking agent
- electrode body
- electrically insulating
- substrate
- area electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010292 electrical insulation Methods 0.000 title claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 74
- 230000000873 masking effect Effects 0.000 claims description 68
- 238000000034 method Methods 0.000 claims description 53
- 239000000758 substrate Substances 0.000 claims description 46
- 239000007772 electrode material Substances 0.000 claims description 20
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 claims description 18
- 239000011521 glass Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 16
- 239000000843 powder Substances 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000003981 vehicle Substances 0.000 claims description 14
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 12
- 229910001887 tin oxide Inorganic materials 0.000 claims description 12
- 239000002904 solvent Substances 0.000 claims description 11
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 10
- 229910000019 calcium carbonate Inorganic materials 0.000 claims description 9
- 239000007864 aqueous solution Substances 0.000 claims description 8
- 238000002955 isolation Methods 0.000 claims description 7
- 238000007650 screen-printing Methods 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 6
- AYJRCSIUFZENHW-DEQYMQKBSA-L barium(2+);oxomethanediolate Chemical compound [Ba+2].[O-][14C]([O-])=O AYJRCSIUFZENHW-DEQYMQKBSA-L 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000003960 organic solvent Substances 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000001856 Ethyl cellulose Substances 0.000 claims description 3
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 239000003929 acidic solution Substances 0.000 claims description 3
- 239000003575 carbonaceous material Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 229920001249 ethyl cellulose Polymers 0.000 claims description 3
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 229910003437 indium oxide Inorganic materials 0.000 claims description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- 150000002823 nitrates Chemical class 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 150000003467 sulfuric acid derivatives Chemical class 0.000 claims description 3
- 239000004925 Acrylic resin Substances 0.000 claims description 2
- 229920000178 Acrylic resin Polymers 0.000 claims description 2
- 239000000020 Nitrocellulose Substances 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- 150000004649 carbonic acid derivatives Chemical class 0.000 claims description 2
- 150000001247 metal acetylides Chemical class 0.000 claims description 2
- 229920001220 nitrocellulos Polymers 0.000 claims description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 101000836150 Homo sapiens Transforming acidic coiled-coil-containing protein 3 Proteins 0.000 claims 1
- 102100027048 Transforming acidic coiled-coil-containing protein 3 Human genes 0.000 claims 1
- FJWGYAHXMCUOOM-QHOUIDNNSA-N [(2s,3r,4s,5r,6r)-2-[(2r,3r,4s,5r,6s)-4,5-dinitrooxy-2-(nitrooxymethyl)-6-[(2r,3r,4s,5r,6s)-4,5,6-trinitrooxy-2-(nitrooxymethyl)oxan-3-yl]oxyoxan-3-yl]oxy-3,5-dinitrooxy-6-(nitrooxymethyl)oxan-4-yl] nitrate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](O[N+]([O-])=O)[C@H]1O[N+]([O-])=O)O[C@H]1[C@@H]([C@@H](O[N+]([O-])=O)[C@H](O[N+]([O-])=O)[C@@H](CO[N+]([O-])=O)O1)O[N+]([O-])=O)CO[N+](=O)[O-])[C@@H]1[C@@H](CO[N+]([O-])=O)O[C@@H](O[N+]([O-])=O)[C@H](O[N+]([O-])=O)[C@H]1O[N+]([O-])=O FJWGYAHXMCUOOM-QHOUIDNNSA-N 0.000 claims 1
- 239000000853 adhesive Substances 0.000 claims 1
- 230000001070 adhesive effect Effects 0.000 claims 1
- 125000003158 alcohol group Chemical group 0.000 claims 1
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 239000003292 glue Substances 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 13
- 239000010410 layer Substances 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000002585 base Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000004377 microelectronic Methods 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000003973 paint Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- DEUGOISHWHDTIR-UHFFFAOYSA-N (1-hydroxy-5,5-dimethylhexyl) 2-methylpropanoate Chemical compound C(C(C)C)(=O)OC(CCCC(C)(C)C)O DEUGOISHWHDTIR-UHFFFAOYSA-N 0.000 description 1
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012442 inert solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- HUAUNKAZQWMVFY-UHFFFAOYSA-M sodium;oxocalcium;hydroxide Chemical compound [OH-].[Na+].[Ca]=O HUAUNKAZQWMVFY-UHFFFAOYSA-M 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- VXKWYPOMXBVZSJ-UHFFFAOYSA-N tetramethyltin Chemical compound C[Sn](C)(C)C VXKWYPOMXBVZSJ-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- -1 trimethylpentanediol monoisobutylene Chemical group 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
- H05K3/143—Masks therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
(57)【要約】本公報は電子出願前の出願データであるため要約のデータは記録されません。 (57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】 大面積電極体の電気的絶縁方法 1亙立1 本発明は、半導体デバイス、特に太陽電池を製造する次の工程を容易にする為の 大面積電極体の電気的絶縁方法に関するものである。[Detailed description of the invention] Electrical insulation method for large area electrode body 1 step 1 The present invention provides a method for facilitating the next step in manufacturing semiconductor devices, particularly solar cells. The present invention relates to a method of electrically insulating a large-area electrode body.
11坦遺 電子デバイスの製造工程は、多数の複雑な工程や精密な扱いを必要とする。直列 に連結されたデバイスの製造工程において、接続を容易にする為に、しばしばデ バイスの下層にある構成要素を分離する必要がある。このようなデバイスの製造 にあたっては、電気的に絶縁する工程が困難で複雑になることがある。11 stories The manufacturing process of electronic devices requires many complex steps and precise handling. series In the manufacturing process of devices connected to It is necessary to separate the underlying components of the device. Manufacture of such devices In this case, the electrical isolation process can be difficult and complicated.
デバイス中の隣接するセルや構成単位の様々な層を電気的に絶縁する為に、レー ザービームを半導体基板面を横切って照射することは従来技術においてよく知ら れている0機械的な分離も、研磨工具や、マイクロ電子デバイスに研磨流を向け るノズルを有する研磨トリマー等により近年性われている。半導体同志の間の部 分における物質層の除去は、その部分の電極の電気抵抗が所望の値に上がるまで 、半導体の間に位置する断面部分をとり除くことによって成される。Layers are used to electrically isolate various layers of adjacent cells or building blocks in a device. It is well known in the prior art to irradiate a laser beam across the surface of a semiconductor substrate. Mechanical separation also directs the abrasive flow towards abrasive tools and microelectronic devices. In recent years, polishing trimmers and the like with nozzles have been used. A club between semiconductor comrades Removal of the material layer in minutes until the electrical resistance of the electrode in that part rises to the desired value , by removing the cross-sectional portion located between the semiconductors.
従来の方法では、パターンを有する材料層は、蒸着中に基板に機械的なマスクを 保持して蒸着することで形成されていた。あいにく、機械的なマスキングは基板 のかなりの部分をブロックしてしまうという影響をもたらす、というのは、適切 な分離を行うのに必要なマスクの下の部分は、半導体デバイスを製造するには大 きすぎるからである。これに加え、マスクの位置決めが困難であることから発生 する問題もある。In traditional methods, a patterned material layer is deposited using a mechanical mask on the substrate during deposition. It was formed by holding and vapor depositing. Unfortunately, mechanical masking It is appropriate to say that it has the effect of blocking a significant portion of The area under the mask required to achieve the desired separation is too large to fabricate semiconductor devices. This is because it is too loud. In addition to this, the problem occurs due to the difficulty in positioning the mask. There are also problems.
1972年9月19日にグリーンその他に付与された米国特許第3691695 号には、マイクロ電子素子に研摩材を直接吹出するノズルを有するマイクロ電子 素子用研摩トリマーが開示されている。ノズルはピボット軸に据え付けられバネ が縮んだ状態で最初の通常動作位置にセットされる。電気回路がトリミングされ ているマイクロ電子デバイスの電気特性を感知し、事前に決められている特性が 感知されたときシグナルを送るようになっている。U.S. Patent No. 3,691,695, granted to Green et al. on September 19, 1972. The issue describes a microelectronic device with a nozzle that sprays abrasive material directly onto microelectronic elements. A polishing trimmer for devices is disclosed. The nozzle is mounted on a pivot shaft and is set to its initial normal operating position in the retracted state. electrical circuits are trimmed It senses the electrical properties of microelectronic devices that are It will send a signal when it is detected.
1984年4月17日にスウォーツに付与された米国特許84443651号に は単一基板の上に直列に形成されたアモルファスシリコン太陽電池が開示されて いる。このような直列に連結されたアモルファスシリコン太陽電池を安価に形成 する方法は、溝が形成されたマスクを通してスプレーされた一連の塗料を用いた “塗ってはがす”方法を含んでいる0次に塗料がはがされ、その結果、金属部分 がその上の電極までのびる突起を形成してしまう。No. 8,444,3651 issued to Swartz on April 17, 1984. discloses amorphous silicon solar cells formed in series on a single substrate. There is. Forming such series-connected amorphous silicon solar cells inexpensively The method used a series of paints sprayed through a grooved mask. 0, which involves a “paint and peel” method, where the paint is removed and the resulting metal parts forms a protrusion that extends to the electrode above it.
1986年5月20日にウォレーその他に付与された米国特許第4590093 号には金属シリサイドからなる細い導電体を形成する方法が開示されている。開 示されているところでは、パターンを形成された多結晶シリコンは保護膜におお われ、縁部分を金属でカバーすることにより縁に沿って金属シリサイドに変換さ れる。残りのシリコン部分は選択的に除去され、形成された跡は導体マスクとし て働くことができる。U.S. Patent No. 4,590,093, issued to Walley et al. on May 20, 1986. A method for forming thin conductors made of metal silicide is disclosed in this issue. Open As shown, the patterned polycrystalline silicon covers a large portion of the protective layer. By covering the edges with metal, the edges are converted to metal silicide. It will be done. The remaining silicon portion is selectively removed, and the traces formed serve as a conductor mask. I can work there.
従って1本発明の目的は、半導体デバイス製造のための大面積電極体の電気的絶 縁を行うことである0本発明のもう一つの目的は、高価なレーザースクライブ方 法や、絶縁のために貴重な基板面積を消費してしまう機械的スクライブ方法を用 いることなしに太陽電池等の半導体デバイスの電極体の分離を行うことである。Therefore, one object of the present invention is to provide electrical isolation for large-area electrode bodies for semiconductor device manufacturing. Another purpose of the present invention is to perform edge cutting without expensive laser scribing methods. or mechanical scribing methods that consume valuable board area for insulation. The purpose of this method is to separate electrode bodies of semiconductor devices such as solar cells without having to use a solar cell.
i豆立!j 本発明は改良された大面積電極体の電気的絶縁方法を提供するものである。さら に詳しくは5本発明は半導体デバイスの製造工程において、薄膜電極体の微細な 分離のための化学的方法を提供するものである。マスキング剤は、あらかじめ決 められたパターンに基板表面に設けられる。好ましいマスキング剤は、有機溶媒 や水溶液とからなるグループから選ばれた溶剤などの、マスキング剤の上から形 成される物質とは化学的上不活性な溶剤により、簡単に除去できるものである。I Mamedate! j The present invention provides an improved method for electrically insulating large area electrode bodies. Sara For details, refer to 5. The present invention is applied to the manufacturing process of semiconductor devices, in which fine particles of thin film electrode bodies are It provides a chemical method for separation. Decide on the masking agent in advance. A pattern is provided on the surface of the substrate. Preferred masking agents are organic solvents A masking agent such as a solvent selected from the group consisting of The resulting material is one that can be easily removed with a chemically inert solvent.
有機溶媒の例としてはアルコール、アセトン等が、水溶液の例としては酸性溶液 が挙げられる。Examples of organic solvents include alcohol, acetone, etc. Examples of aqueous solutions include acidic solutions. can be mentioned.
次に導電性電極物質がパターンを有するマスキング剤の上に形成され、そして、 溶剤中で溶解することにより、マスキング剤はその上に形成された電極物質とと もに除去される。除去後には、基板の少なくとも一部は露出し、電気的に絶縁さ れた電極部分の間で所望の電気的接続ができるように、互いに電気的に絶縁され る。A conductive electrode material is then formed over the patterned masking agent, and By dissolving in a solvent, the masking agent interacts with the electrode material formed on it. Also removed. After removal, at least a portion of the substrate is exposed and electrically isolated. electrically insulated from each other to provide the desired electrical connection between the electrode parts. Ru.
マスキング剤は高分子材料、炭素質材料、硫酸塩、硝酸塩、フォトレジスト、酸 化物、炭厳塩から成るグループから選ばれる。マスキング剤は好ましくは炭酸バ リウム、炭酸カルシウム、又は炭化珪素である。マスキング剤を設ける工程はス クリーン印刷又はフォトリソグラフィ一工程により行なわれる。Masking agents include polymeric materials, carbonaceous materials, sulfates, nitrates, photoresists, and acids. Selected from the group consisting of salts and salts. The masking agent is preferably a carbonated bag. calcium carbonate, or silicon carbide. The process of applying masking agent is It is performed by one step of clean printing or photolithography.
特に、スクリーン印刷に適するもう1つの好ましいマスキング剤としては、遮蔽 用粉末と、ビヒクルと、その他の材料の混合物であるペーストが挙げられる。Another preferred masking agent, particularly suitable for screen printing, is Examples include pastes, which are mixtures of powder, vehicle, and other materials.
遮蔽用粉末としては、炭酸カルシウム、炭酸バリウム、又は炭化珪素が好ましい 、これらの物質は、マスキング剤の上から化学的気相蒸着により上層膜を形成す るときの温度、通常400〜600℃程度の高い温度でも安定で、基体や、マス キング剤の上に形成される上層膜と実質的に化学的に不活性であるからである。Calcium carbonate, barium carbonate, or silicon carbide is preferred as the shielding powder. , these materials are deposited on top of the masking agent by chemical vapor deposition to form an upper layer. It is stable even at high temperatures, usually around 400 to 600℃, and does not damage the substrate or mass. This is because it is substantially chemically inert to the upper layer film formed on the king agent.
さらに、炭酸カルシウムに関しては、均一な粒径の粉末が容易に得られるので、 ビヒクルに均一に分散し、均一な遮蔽効果が得られる。その上、炭酸カルシウム は酸性溶液によって非常に容易に除去可使である。Furthermore, regarding calcium carbonate, powder with uniform particle size can be easily obtained. It is evenly dispersed in the vehicle and provides a uniform shielding effect. Moreover, calcium carbonate is very easily removable by acidic solutions.
遮蔽用粉末の平均粒径は0.51Lm未満であることが望ましい、より好ましく は最大粒径が0.51Lm未満であることが好ましい0粒径が小さくなる程、マ スキング剤の遮蔽効果は向上する。又1粒径が小さくなる程、マスキング剤はよ り微細なパターンでスクリーン印刷できるようになる。即ち、より薄い厚さでよ り細い幅で印刷できるようになる。このことは、光電交換セルの場合は特に重要 である。というのは、スクリーン印刷したときのマスキング剤が厚すざると、上 層膜の各部分の端縁部に非常に高い突起が発生する原因となり、これは、かかる 突起が光電交換セルの裏面電極に接触して短絡を起こしてしまうため、致命的な 問題となるのである。又、スクリーン印刷したマスキング剤の幅が広いと、光電 変換セルの太陽に露出した活性な部分の表面面積が減少し、光電変換効率が低下 してしまうからである。The average particle size of the shielding powder is desirably less than 0.51 Lm, more preferably It is preferable that the maximum particle size is less than 0.51Lm.The smaller the particle size, the more The shielding effect of the skinning agent is improved. Also, the smaller the particle size, the better the masking agent. This makes it possible to screen print finer patterns. In other words, the thickness is smaller. This allows you to print in narrower widths. This is especially important for photovoltaic switching cells. It is. This is because if the masking agent used during screen printing is too thick, it will not coat the surface. This causes very high protrusions to occur at the edges of each part of the layered film, and this This can be fatal as the protrusion contacts the back electrode of the photoelectric exchange cell and causes a short circuit. This becomes a problem. Also, if the width of the screen-printed masking agent is wide, the photovoltaic The surface area of the solar-exposed active part of the conversion cell is reduced, reducing the photoelectric conversion efficiency. This is because you end up doing it.
しかしながら1反対に、遮蔽用粉末の粒径が小さすぎると、ビヒクルに均一に分 散させるのが難しい、その上、非常に細かい粒子を作るのは困難である0以上の ような理由で、遮蔽用粉末の平均粒径は0.5μm未満、o、osgm以上であ ることが好ましい。However, on the other hand, if the particle size of the shielding powder is too small, it will not distribute uniformly into the vehicle. It is difficult to disperse, and moreover, it is difficult to make very fine particles. For these reasons, the average particle size of the shielding powder is less than 0.5 μm and more than osgm. It is preferable that
マスキング剤に含まれるビヒクルはスクリーン印刷性に優れ、微細なパターンで も寸法精度良く印刷できる程度の粘度を有し、簡単に除去できるものであればよ い、これらの性質を考慮すると、ビヒクルは、エチルセルロース、ニトロセルロ ース、又はアクリル樹脂を含むものが好ましい、粘度を調整するために、これら の物質と相溶性のある溶剤を添加しても良い、必要に応じて、高沸点溶剤、酸化 剤などをビヒクルに添加しても良い。The vehicle contained in the masking agent has excellent screen printing properties and can be printed in fine patterns. If it has a viscosity that allows printing with good dimensional accuracy and can be easily removed, it is fine. Considering these properties, the vehicle is ethylcellulose, nitrocellulose, Preferably, those containing a base or acrylic resin are used to adjust the viscosity. Solvents that are compatible with the substances may be added, if necessary, high boiling point solvents, oxidation Agents etc. may be added to the vehicle.
マスキング剤は、上記遮蔽用粉末を40〜60wt%、ビヒクルを60〜40w t%含んでいることが好ましい。The masking agent contains 40 to 60 wt% of the above-mentioned shielding powder and 60 to 40 wt% of the vehicle. It is preferable that it contains t%.
本発明において開示されているマスキング剤を設けるパターンは、半導体デバイ スの構成要素の直列接続に応用したものであり、基体の端から端まで延びる矩形 の導電帯を残すようなパターンを含んでいる。かかる導電帯は、各導電帯間の間 隔が最小になるように、例えば約0−1mm以上、約1.0mm以下の間隔をお いて、形成される0本発明の方法によれば、かかるパターンに限らず、どのよう な形のパターンも可能である。The pattern in which the masking agent disclosed in the present invention is provided is suitable for semiconductor devices. A rectangular shape that extends from one end of the base to the other. It contains a pattern that leaves a conductive band. Such conductive bands are arranged between each conductive band. To minimize the distance, for example, keep the distance between about 0-1 mm or more and about 1.0 mm or less. According to the method of the present invention, not only such patterns but also any type of pattern can be formed. Patterns of various shapes are also possible.
導電性電極物質からなる上層膜の形成は、インジウムを含む酸化錫、フッ素がド ープされた酸化錫、アンチモンがドープされた酸化錫等の透明導電性酸化物から なるマスキング剤と、その上に形成された電極物質とを除去する為に、基体は超 音波洗浄かつ/又は化学的洗浄され。The formation of the upper layer film consisting of conductive electrode material is carried out using tin oxide containing indium and fluorine doped. from transparent conductive oxides such as doped tin oxide and antimony-doped tin oxide. In order to remove the masking agent and the electrode material formed thereon, the substrate is Sonically and/or chemically cleaned.
それによってマスキング剤が除去された結果、基体が部分的に露出し、上記電極 材料の基体に残っている部分が電気的に絶縁される。これにより、分離された電 極体が形成され、かかる電気的に絶縁された電極部分の間で選択的な電気接続が 可能となる。かかる電気的に絶縁された電極部分間は、1000Ω以上の電気的 分離を生じる電気抵抗を呈する。The masking agent is thereby removed, and as a result, the substrate is partially exposed and the above electrode is removed. The portion of the material that remains on the substrate is electrically insulated. This allows isolated electrical Pole bodies are formed and selective electrical connections are made between such electrically isolated electrode portions. It becomes possible. There is an electrical resistance of 1000Ω or more between such electrically insulated electrode parts. exhibits electrical resistance that causes separation.
本発明の利点は、レーザーや、機械的研磨装置を用いずに、安い費用で、正確な 電極材料の除去ができることである0本発明の他の利点や特徴は1次の記載によ って認められる。The advantage of the present invention is that it is inexpensive and accurate, without the use of lasers or mechanical polishing equipment. Other advantages and features of the present invention include the ability to remove electrode materials. That's recognized.
単な雪 図1aから図ICは、本発明の方法を用いた。太陽電池等の半導体デバイスの製 造工程の概要を示す断面図である。just snow Figures 1a to 1C used the method of the invention. Manufacture of semiconductor devices such as solar cells FIG. 2 is a cross-sectional view showing an outline of the manufacturing process.
図2は本発明によってパターニングされた基体の一例を示す平面図である。FIG. 2 is a plan view showing an example of a substrate patterned according to the present invention.
−/熊 第1図には1本発明の方法が、半導体デバイスの段階的形成方法を示す図によっ て示されている0図1aには、基体14とあらかじめの選択されたパターンをも って設けられたマスキング剤12を有する、10で示されたデバイスが示されて いる。基体14の代表例としてはガラスが挙げられるが、プラスチック、金属箔 、シリコンウェハー、ガリウムヒ素ウニバー、従来使われていた基体等。−/Bear The method of the present invention is illustrated in FIG. FIG. 1a also shows a substrate 14 and a preselected pattern. A device designated 10 is shown having a masking agent 12 provided with There is. Typical examples of the base 14 include glass, but plastic, metal foil, etc. , silicon wafers, gallium arsenide univar, conventionally used substrates, etc.
ガラス以外の材料でもよい、基体14は、ガラス等の、非導電性、絶縁性基体で も良い、アルカリ金属を含むガラス基体の場合には、基体14は、かかるアルカ リ含有ガラス基体上に形成されたS、02.A文 0 、ZrO2等からなるア ルカリ拡散防止層を含んでいても良い、基体の大きさとしては、1フイート×1 フイートの太陽電池用の基体も含め、どのようなサイズであってもよい。The substrate 14 may be made of a material other than glass, but may be a non-conductive, insulating substrate such as glass. In the case of a glass substrate containing an alkali metal, the substrate 14 may contain such an alkali metal. S,02. A sentence consisting of 0, ZrO2, etc. The size of the substrate, which may include a lukewarm anti-diffusion layer, is 1 foot x 1 It can be of any size, including substrates for foot solar cells.
マスキング剤12を構成する材料は、高分子材料、炭素質材料、硫酸塩、硝酸塩 、フォトレジスト、酸化物、炭化物、炭酸塩からなるグループから選択されても 良い、好ましいマスキング剤としては、炭酸バリウム、炭酸カルシウム、又は炭 化珪素が挙げられる。他の好ましいマスキング剤としては、遮蔽用粉末、ビヒク ル、その他の材料の混合物が挙げられる。マスキング剤12のあらかじめ選択さ れたパターンは、スクリーン印刷あるいはフォトリソグラフィ一工程によって形 成されるのが好ましい、マスキング剤12の構成材料は、有機溶媒と水溶液から なるグループから選択される溶剤による除去のしやすさを考慮して選択される。The materials constituting the masking agent 12 include polymer materials, carbonaceous materials, sulfates, and nitrates. , photoresists, oxides, carbides, carbonates. Good and preferred masking agents include barium carbonate, calcium carbonate, or charcoal. Examples include silicon oxide. Other preferred masking agents include shielding powders, vehicle and mixtures of other materials. Pre-selected masking agent 12 The resulting pattern is formed by screen printing or a single photolithography process. The constituent material of the masking agent 12 is preferably made of an organic solvent and an aqueous solution. It is selected in consideration of ease of removal by a solvent selected from the group consisting of:
もちろん、マスキング剤の種類に応じて、種々の溶剤を選択して使用しなければ ならない。Of course, various solvents must be selected and used depending on the type of masking agent. No.
遮蔽用粉末とビヒクルとを有するマスキング剤を使用する場合には、その上に上 層膜を形成する前に、該マスキング剤を乾燥又は仮焼成する必要がある。When using a masking agent containing a shielding powder and a vehicle, Before forming a layer film, the masking agent needs to be dried or pre-baked.
図2には、マスキング剤12が、互いに間をあけて基体14の端から端まで延び た矩形の帯状体20を形成するようなパターンで設けられた例が示されている。In FIG. 2, the masking agents 12 extend from one end of the substrate 14 to the other at intervals. An example is shown in which they are provided in a pattern that forms a rectangular strip 20.
マスキング剤は、各帯状体間の間隔21を最小にするように設けられる。これは 、光電変換材料の太陽に露出した活性な部分の表面積を最大にすることがより有 利である光電変換素子の分野においては特に有益である。帯状体20の間の最小 の間隔21は、約0.1mm以上約1.0mm以下であることが好ましい。The masking agent is provided to minimize the spacing 21 between each strip. this is , it is more advantageous to maximize the surface area of the sun-exposed active part of the photovoltaic material. This is particularly advantageous in the field of photoelectric conversion elements, which have many advantages. The minimum between the strips 20 The interval 21 is preferably about 0.1 mm or more and about 1.0 mm or less.
次に、図1bに示した様に、錫を含む酸化インジウム。Next, as shown in Figure 1b, indium oxide containing tin.
フッ素又はアンチモンをドープした酸化錫等の透明導電性酸化物電極物質からな る上Jjli16が、パターンをもって塗布されたマスキング剤12の上から形 成される。かかる上層M16は、300A以上20000A以下、好ましくは3 000A以上20000A以下の厚さで形成される。Made of transparent conductive oxide electrode materials such as tin oxide doped with fluorine or antimony. Jjli 16 applies the shape from above the masking agent 12 applied in a pattern. will be accomplished. The upper layer M16 has a diameter of 300A or more and 20,000A or less, preferably 3 It is formed with a thickness of 000A or more and 20000A or less.
次にデバイス10はマスキング剤12を除去する為に溶剤と接触させられる。マ スキング剤12は、超音波洗浄かつ/又は化学的洗浄1例えばスプレーパス、タ ンクバスやその他従来の洗浄方法によって、有機溶媒又は水溶液中で除去される 。Device 10 is then contacted with a solvent to remove masking agent 12. Ma The skinning agent 12 is applied to ultrasonic cleaning and/or chemical cleaning 1 such as spray pass, tap removed in organic or aqueous solutions by water baths or other conventional cleaning methods. .
そして図ICに示した様に、マスキング剤12は除去され、基体14上にパター ニングされた電極物質N16が残される。マスキング剤12を除去し、た部分の 抵抗は1000Ω以上となる。結果として、電極物質16が別々の電極部分に分 離された図1cに示したような構造ができる。これでこれらの電極部分は、一体 重な光電変換デバイスの次の製造工程に、おいて直列接続をすることができる。Then, as shown in Figure IC, the masking agent 12 is removed and a pattern is placed on the substrate 14. The etched electrode material N16 is left behind. After removing the masking agent 12, The resistance will be 1000Ω or more. As a result, the electrode material 16 is divided into separate electrode parts. A structure like the one shown in FIG. 1c is created when separated. Now these electrode parts are integrated. Series connection can be made in the next manufacturing process of overlapping photoelectric conversion devices.
電極部分16の端縁部の突起17は、マスキング剤が非常に薄い厚みでスクリー ン印刷されれば低減できる。これは1粒径が小さい、好ましくは0.5ルm未満 の遮蔽用粉末を有するマスキング剤を用いることで実現できる。The protrusion 17 on the edge of the electrode portion 16 is coated with a very thin layer of masking agent. This can be reduced if printing is performed. This means that the particle size is small, preferably less than 0.5 lm This can be achieved by using a masking agent having a shielding powder of
本発明を次の実施例によってさらに詳細に説明する。The invention will be explained in more detail by the following examples.
支1璽」 lフィートス1フイート大のガラス基板上に、基体の端から端まで延びた矩形の 帯状体を歿すような図2に示したようなパターンをもって、帯状体の幅を約1c mとし、帯状体同志の間隔を約0.5mmとして、炭酸バリウムをス望のマスキ ング剤のパターンを形成した。その後、透明導電性酸化物膜を、パターンをもっ て塗布し九炭醸バリウムの上から形成した0次に、炭酸バリウムを、アルコール 中で化学的洗浄により除去した。ガラス基体の一部は露出し、透明導電性酸化物 の残りの部分は5000Ω以上の抵抗をもって電気的に分離された。1st Seal” A rectangular shape extending from one end of the base to the other on a 1 foot sized glass substrate. With a pattern like the one shown in Figure 2 that covers the strip, the width of the strip is about 1 cm. m, and the spacing between the strips was approximately 0.5 mm, and the barium carbonate was placed in a desired mask. A pattern of the dyeing agent was formed. After that, a transparent conductive oxide film with a pattern is applied. Next, apply barium carbonate and alcohol. It was removed by chemical cleaning inside. Part of the glass substrate is exposed and transparent conductive oxide The remaining portion was electrically isolated with a resistance of 5000Ω or more.
支亙皇」 平均粒径)(約0.3μmの炭酸カルシウム粉末100gと、エチルセルロース 6wt%とトリメチルペンタンジオールモノイソブチレー)94wt%からなる ビヒクル90gとを混練し、更にトリメチルペンタンジオールモノイソブチレー )25gを加えて、25℃における粘度が5oooocpsのペースト状のマス キング剤を作製した。The Emperor of China” (average particle size) (100 g of calcium carbonate powder of approximately 0.3 μm and ethyl cellulose) 6 wt% and trimethylpentanediol monoisobutyrate) 94 wt% Knead with 90g of vehicle, and then add trimethylpentanediol monoisobutylene. ) to form a paste-like mass with a viscosity of 5ooooocps at 25°C. A king agent was prepared.
lフィートス1フイート大で、表面にSiO2からなるアルカリ拡散バリヤ一層 を有するソーダライムシリケートガラス基板上に、基板の端から端まで延びた矩 形の帯状体を残すようなあらかじめ選択されたパターンをもって、帯状体の幅を 約1cmとし、帯状体同志の間隔を約0.4mmとして、上記マスキング剤を上 記5i02暦上にスクリーン印刷した。スクリーン印刷工程によって自動的に所 望のマスキング剤のパターンを形成した。印刷されたマスキング剤の厚みは約1 0Bmであった。1 foot large, with one layer of alkali diffusion barrier made of SiO2 on the surface. on a soda lime silicate glass substrate with a rectangular shape extending from one end of the substrate to the other. Adjust the width of the strip with a pre-selected pattern that leaves a strip of shape. The above masking agent was applied on top with a width of about 1 cm and a spacing between the strips of about 0.4 mm. Screen printed on the 5i02 calendar. Automatically placed by screen printing process The desired masking agent pattern was formed. The thickness of the printed masking agent is approximately 1 It was 0Bm.
該パターン印刷されたマスキング剤を有する該ガラス基板を150℃で10分間 乾燥した後、CVD装置に入れ。The glass substrate with the pattern-printed masking agent was heated at 150°C for 10 minutes. After drying, put it into the CVD equipment.
500℃に加熱した。テトラメチル錫蒸気酸素(0、517分)、及びブロモト リフロロメタン(CF B 、0.11/m1n)を含む窒素ガスを、上r 記パターン印刷されたガラス基板上に217m1nで吹きつけ1.0wt%のフ ッ素のドープされた酸化錫からなる上層m (II厚5000A)を形成した。It was heated to 500°C. Tetramethyltin vapor oxygen (0.517 min), and bromoto Nitrogen gas containing refluoromethane (CFB, 0.11/ml) was A 1.0 wt% film was sprayed onto the glass substrate with the above pattern printed at 217 m1n. An upper layer m (II thickness: 5000 A) made of fluorine-doped tin oxide was formed.
次に、水溶液中で超音波洗浄してマスキング剤を除去した。ガラス基板の一部が 露出し、フッ素がドープされた酸化錫膜の残りの部分は互いに4000Ω以上の 抵抗をもって電気的に絶縁された。フッ素がドープされた酸化錫膜の各部分の端 縁部の突起の高さは約0.21Lm程度であった。Next, the masking agent was removed by ultrasonic cleaning in an aqueous solution. Part of the glass substrate The remaining portions of the exposed, fluorine-doped tin oxide film are connected to each other by a resistance of 4000Ω or more. electrically isolated with resistance. Edges of each part of fluorine-doped tin oxide film The height of the edge protrusion was approximately 0.21 Lm.
次に、該パターニングされた酸化錫膜を有するガラス基板上にプラズマCVD法 でアモルファスシリコン膜(M厚400OA)を成膜し、さらに、裏面電極とし て該アモルファスシリコン膜上に銀の被膜を形成して太陽電池を作製した。Next, a plasma CVD method was applied to the glass substrate having the patterned tin oxide film. An amorphous silicon film (M thickness 400OA) was formed using A silver film was formed on the amorphous silicon film to produce a solar cell.
該太陽電池の上記酸化錫膜のパターニングされた各部分に対応した各セクション ごとの電気的特性を調べたところ短絡の発生したセクションはなかった。Each section corresponding to each patterned portion of the tin oxide film of the solar cell When we examined the electrical characteristics of each section, there were no sections where a short circuit occurred.
上記実施例や説明では、透明導電酸化物やマスキング剤の具体例を例示したが、 例示しなかった他の材料も用いることができることは、かかる技術に携わる者に は明らかである。さらに、上述した説明や実施例は電極体材料を対象にしている が、本発明の有用性はこれに限られたものではない0次の特許請求の範囲は1本 発明の範囲を特定しようとするものである。In the above examples and explanations, specific examples of transparent conductive oxides and masking agents were illustrated, but It should be noted to those involved in such technology that other materials not exemplified can also be used. is clear. Furthermore, the above description and examples are directed to electrode body materials. However, the usefulness of the present invention is not limited to this. It attempts to specify the scope of the invention.
FJGLJF?E I a FIGυREIb FIGURE Ic FIGURE 2 − 国際調査報告FJGLJF? E I a FIGυREIb FIGURE Ic FIGURE 2 − International search report
Claims (27)
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US1986887A | 1987-02-27 | 1987-02-27 | |
US019868 | 1987-02-27 |
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JPH01502631A true JPH01502631A (en) | 1989-09-07 |
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JP63502060A Pending JPH01502631A (en) | 1987-02-27 | 1988-02-26 | Electrical insulation method for large area electrode body |
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EP (1) | EP0302946A1 (en) |
JP (1) | JPH01502631A (en) |
AU (1) | AU1364288A (en) |
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US8677929B2 (en) | 2010-12-29 | 2014-03-25 | Intevac, Inc. | Method and apparatus for masking solar cell substrates for deposition |
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US4206254A (en) * | 1979-02-28 | 1980-06-03 | International Business Machines Corporation | Method of selectively depositing metal on a ceramic substrate with a metallurgy pattern |
US4339305A (en) * | 1981-02-05 | 1982-07-13 | Rockwell International Corporation | Planar circuit fabrication by plating and liftoff |
US4443651A (en) * | 1981-03-31 | 1984-04-17 | Rca Corporation | Series connected solar cells on a single substrate |
US4396458A (en) * | 1981-12-21 | 1983-08-02 | International Business Machines Corporation | Method for forming planar metal/insulator structures |
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1988
- 1988-02-26 AU AU13642/88A patent/AU1364288A/en not_active Abandoned
- 1988-02-26 JP JP63502060A patent/JPH01502631A/en active Pending
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WO1988006803A1 (en) | 1988-09-07 |
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