JPH0148659B2 - - Google Patents
Info
- Publication number
- JPH0148659B2 JPH0148659B2 JP58195232A JP19523283A JPH0148659B2 JP H0148659 B2 JPH0148659 B2 JP H0148659B2 JP 58195232 A JP58195232 A JP 58195232A JP 19523283 A JP19523283 A JP 19523283A JP H0148659 B2 JPH0148659 B2 JP H0148659B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- additive
- resin
- present
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000654 additive Substances 0.000 claims description 20
- 230000000996 additive effect Effects 0.000 claims description 17
- 239000011347 resin Substances 0.000 claims description 12
- 229920005989 resin Polymers 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 239000011863 silicon-based powder Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 26
- 239000000377 silicon dioxide Substances 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000007789 sealing Methods 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 239000012535 impurity Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 4
- 229910052776 Thorium Inorganic materials 0.000 description 4
- 229910052770 Uranium Inorganic materials 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 230000015654 memory Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 150000001224 Uranium Chemical class 0.000 description 1
- 230000005260 alpha ray Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、樹脂封止形電子装置に関し、特に、
その封止用樹脂に添加された添加物に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a resin-sealed electronic device, and in particular,
The present invention relates to additives added to the sealing resin.
（従来例の構成とその問題点）
従来の半導体装置の封止用樹脂内には、添加材
として結晶性若しくは溶融性のシリカ（二酸化珪
素）が混入されている。そして、これらを使い分
けることで、半導体装置の材料であるシリコンと
の熱膨張率の整合や、半導体装置内での電力消費
によつて発生する熱を効率よく放散させるための
高熱伝導率化を図つてきた。しかし、この場合、
熱膨張率の整合を改善すると熱伝導率が低下し、
逆に、熱伝導率の改善を図ると、シリコンとの熱
膨張率の差が大きくなるという問題があつた。(Structure of a conventional example and its problems) Crystalline or fusible silica (silicon dioxide) is mixed as an additive into the sealing resin of a conventional semiconductor device. By using these materials properly, we aim to match the coefficient of thermal expansion with silicon, which is the material of semiconductor devices, and to achieve high thermal conductivity to efficiently dissipate heat generated by power consumption within semiconductor devices. It came. But in this case,
Improving thermal expansion matching reduces thermal conductivity and
On the other hand, when trying to improve thermal conductivity, there was a problem in that the difference in thermal expansion coefficient with silicon increased.
これらの問題は、封止用樹脂中に混入される添
加材が、半導体チツプの材料であるシリコンと異
なることに起因する。 These problems are caused by the fact that the additive mixed into the sealing resin is different from silicon, which is the material of the semiconductor chip.
第１図は、従来の添加材の製造工程を示したも
のであり、得られるシリカの形状例を第３図ａに
示している。 FIG. 1 shows a conventional additive manufacturing process, and an example of the shape of the obtained silica is shown in FIG. 3a.
このように、シリカの原材料は一般に鉱山より
採掘した原石を用いるので、この中には天然のウ
ランやトリウムが微量に含まれており、このウラ
ンやトリウムを含むシリカを半導体装置封止用樹
脂中に添加材として用いた場合、ウランやトリウ
ムからα線が放出され、このα線照射エネルギー
（5MeV）はシリコン中で電子−正孔対をつく
り、例えば、半導体メモリー装置の場合には、回
路要素のダイナミツクRAMのメモリーセルを構
成しているメモリー容量中の蓄積電荷を反転さ
せ、誤動作を誘発する。 In this way, the raw material for silica is generally raw stone extracted from mines, which contains trace amounts of natural uranium and thorium, and the silica containing this uranium and thorium is used in resin for encapsulating semiconductor devices. When used as an additive in silicon, α-rays are emitted from uranium and thorium, and this α-ray irradiation energy (5 MeV) creates electron-hole pairs in silicon, and for example, in the case of semiconductor memory devices, it This reverses the accumulated charge in the memory capacitance that makes up the memory cells of dynamic RAM, causing malfunctions.
さらに、天然シリカ中には、半導体不純物汚染
の物質であるナトリウムや塩素、カリウム等の不
純物が混入しているなどの問題があつた。 Furthermore, natural silica has the problem of being contaminated with impurities such as sodium, chlorine, and potassium, which are semiconductor impurity contaminants.
（発明の目的）
本発明は、上記従来例の問題点を一挙に解消す
るもので、添加材の純度並びに熱伝導率を著しく
向上させた半導体装置封止用樹脂を用いてなる樹
脂封止形電子装置を提供するものである。(Object of the Invention) The present invention solves the problems of the above-mentioned conventional methods at once, and is a resin-sealed type using a resin for encapsulating semiconductor devices in which the purity of additives and thermal conductivity are significantly improved. The present invention provides an electronic device.
（発明の構成）
本発明における封止用樹脂の添加材は、半導体
純度の単結晶又は多結晶シリコン塊を所定の粒度
（粒径は約30〜250μｍ）に一旦粉砕し、この粉砕
したシリコン粒を、高温水蒸気（700〜1200℃）
中に通してシリコン粒の表面に一定厚さ（１〜
10μｍ）の二酸化珪素被膜を形成したもので、こ
れを添加剤として混入した封止用樹脂で電子装置
を封止する。(Structure of the Invention) The additive material for the sealing resin in the present invention is obtained by pulverizing a single crystal or polycrystalline silicon lump of semiconductor purity to a predetermined particle size (particle size is approximately 30 to 250 μm), and then producing the pulverized silicon particles. , high temperature steam (700~1200℃)
A certain thickness (1~
A silicon dioxide coating of 10 μm) is formed, and electronic devices are sealed with a sealing resin containing this as an additive.
（実施例の説明） 以下、図面を参照して、実施例を説明する。(Explanation of Examples) Examples will be described below with reference to the drawings.
第２図は、本発明の一実施例の添加材の製造工
程を示したものである。まず、多結晶シリコンを
得る代表的な製法として、三塩化シラン法とモノ
シラン法とがあり、これらの方法で高純度の多結
晶シリコンを得る。この多結晶シリコンを必要に
応じて30〜250μｍの粒度に粉砕する。この粒径
の多結晶シリコン粒を700〜1200℃の湿中雰囲気
で酸化させ、表面に１〜10μｍ程度の二酸化シリ
コンの膜を形成する。この酸化処理当り、例えば
酸素（O2）と水素（H2）を炉内で燃焼させ、発
生した水蒸気を利用するパイロ酸化法を採用す
る。具体的には、例えば酸素と水素の供給流量
を、酸素（O2）８／分、水素（H2）14／分
とし、酸化温度を1000±50℃に設定した炉内へ多
結晶シリコン粒を配置して約15時間にわたる酸化
処理を施す。これにより、多結晶シリコン粒の表
面には厚さが2.5〜3.0μｍの二酸化シリコン膜が
形成される。そして、不純物分析の後、これを添
加材として得る。 FIG. 2 shows the manufacturing process of an additive material according to an embodiment of the present invention. First, typical manufacturing methods for obtaining polycrystalline silicon include the trichlorosilane method and the monosilane method, and highly pure polycrystalline silicon is obtained by these methods. This polycrystalline silicon is ground to a particle size of 30 to 250 μm, if necessary. Polycrystalline silicon grains having this grain size are oxidized in a humid atmosphere at 700 to 1200°C to form a silicon dioxide film of about 1 to 10 μm on the surface. For this oxidation treatment, for example, a pyro-oxidation method is employed in which oxygen (O 2 ) and hydrogen (H 2 ) are burned in a furnace and the generated steam is utilized. Specifically, for example, the supply flow rate of oxygen and hydrogen was set to 8/min for oxygen (O 2 ) and 14/min for hydrogen (H 2 ), and polycrystalline silicon grains were introduced into a furnace with an oxidation temperature set at 1000±50°C oxidation treatment for approximately 15 hours. As a result, a silicon dioxide film having a thickness of 2.5 to 3.0 μm is formed on the surface of the polycrystalline silicon grains. After impurity analysis, this is obtained as an additive.
第３図ｂは、得られた添加材の断面を示したも
のであり、１は二酸化シリコン膜、２は多結晶シ
リコンである。 FIG. 3b shows a cross section of the obtained additive material, in which 1 is a silicon dioxide film and 2 is polycrystalline silicon.
添加材は、用途に応じて60〜80重量％の割合で
樹脂中に混入され、これを封止用樹脂として電子
装置の外囲封止に使用する。 The additive material is mixed into the resin at a ratio of 60 to 80% by weight depending on the purpose, and this is used as a sealing resin to seal the outer envelope of an electronic device.
なお、用途に応じて樹脂の熱伝導率を向上させ
たい場合には、多結晶シリコンから単結晶シリコ
ンに結晶成長させた後粉砕し、以下、上述の方法
で二酸化シリコン膜を形成するようにしてもよ
い。 If you want to improve the thermal conductivity of the resin depending on the application, you can grow polycrystalline silicon into single crystal silicon, then crush it, and then form a silicon dioxide film using the method described above. Good too.
（発明の効果）
本発明によれば、添加材の熱膨張率は、従来の
11×10-6／℃に対し本発明では５×10-6〜８×
10-6／℃とシリコンの3.5×10-6／℃に近い。さ
らに、熱伝導率も、従来の9.3W・ｍ-1・K-1に対
して本発明では30〜50W・ｍ-1・K-1と高くな
る。(Effect of the invention) According to the invention, the coefficient of thermal expansion of the additive material is lower than that of the conventional one.
11×10 -6 /°C, whereas in the present invention it is 5×10 -6 to 8×
10 -6 /℃, which is close to silicon's 3.5×10 -6 /℃. Furthermore, the thermal conductivity of the present invention is also higher, 30 to 50 W·m −1 ·K −1 , compared to 9.3 W·m −1 ·K −1 in the conventional case.
添加材中のウラン、トリウム、ナトリウム等の
不純物含有量は、従来のものに比べれば無視し得
る程度に低く、半導体装置の不純物汚染や半導体
メモリー等で生じる情報反転も防げる。 The content of impurities such as uranium, thorium, and sodium in the additive material is negligible compared to conventional additives, and impurity contamination of semiconductor devices and information inversion that occurs in semiconductor memories can be prevented.
以上の効果から、シリコン半導体装置の封止用
樹脂に係る諸問題を一挙に解決し、高純度、低応
力、高熱伝導という優れた特性を有する樹脂封止
形電子装置を得ることができる利点がある。 From the above effects, it is possible to solve all the problems related to the sealing resin of silicon semiconductor devices at once, and to obtain resin-sealed electronic devices with excellent properties such as high purity, low stress, and high thermal conductivity. be.
第１図は、従来の添加物（シリカ）の製造工程
図、第２図は、本発明の一実施例の添加物の製造
工程図、第３図ａは、従来の添加物の断面図、第
３図ｂは、本発明実施例の添加物の断面図であ
る。
１……二酸化シリコン、２……シリコン（粒）。
FIG. 1 is a manufacturing process diagram of a conventional additive (silica), FIG. 2 is a manufacturing process diagram of an additive according to an embodiment of the present invention, and FIG. 3a is a cross-sectional diagram of a conventional additive. FIG. 3b is a cross-sectional view of an additive according to an example of the present invention. 1...Silicon dioxide, 2...Silicon (grains).
Claims (1)
して含む外囲樹脂で封止されたことを特徴とする
樹脂封止形電子装置。1. A resin-sealed electronic device characterized in that it is sealed with an outer resin containing surface-oxidized silicon powder as an additive.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58195232A JPS6088448A (en) | 1983-10-20 | 1983-10-20 | Resin-sealed type electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58195232A JPS6088448A (en) | 1983-10-20 | 1983-10-20 | Resin-sealed type electronic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6088448A JPS6088448A (en) | 1985-05-18 |
| JPH0148659B2 true JPH0148659B2 (en) | 1989-10-20 |
Family
ID=16337674
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58195232A Granted JPS6088448A (en) | 1983-10-20 | 1983-10-20 | Resin-sealed type electronic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6088448A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2773660B2 (en) * | 1994-10-27 | 1998-07-09 | 日本電気株式会社 | Semiconductor device |
| JP2019131669A (en) * | 2018-01-30 | 2019-08-08 | 帝人株式会社 | Resin composition and insulation heat conductive sheet |
-
1983
- 1983-10-20 JP JP58195232A patent/JPS6088448A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6088448A (en) | 1985-05-18 |
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