JPH0138872B2 - - Google Patents
Info
- Publication number
- JPH0138872B2 JPH0138872B2 JP62136246A JP13624687A JPH0138872B2 JP H0138872 B2 JPH0138872 B2 JP H0138872B2 JP 62136246 A JP62136246 A JP 62136246A JP 13624687 A JP13624687 A JP 13624687A JP H0138872 B2 JPH0138872 B2 JP H0138872B2
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- sputtering
- wafer
- vacuum processing
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004544 sputter deposition Methods 0.000 claims description 31
- 235000012431 wafers Nutrition 0.000 claims description 26
- 238000005530 etching Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 239000000428 dust Substances 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明は真空処理装置に関し、特に多層スパツ
タ、反応性スパツタ、バイアススパツタ、スパツ
タエツチ、DCスパツタ、RFスパツタ等の組合
せ、あるいはエツチング＋スパツタに使用可能な
装置に係わる。[Detailed Description of the Invention] [Object of the Invention] (Industrial Field of Application) The present invention relates to a vacuum processing apparatus, particularly a combination of multilayer sputtering, reactive sputtering, bias sputtering, sputtering, DC sputtering, RF sputtering, etc. Or it relates to equipment that can be used for etching and sputtering.
（従来の技術）
従来、例えば多層（３層）のスパツタを行うス
パツタリング装置としては、第２図に示すものが
知られている。(Prior Art) Conventionally, as a sputtering apparatus for performing multilayer (three-layer) sputtering, for example, the one shown in FIG. 2 is known.
図中の１は、チヤンバーである。このチヤンバ
ー１の側壁にはウエハ２を搬送するための入口３
が設けられ、かつ中央にはウエハを立てかける回
転可能なキヤリア４が設けられている。また、前
記チヤンバー１の内側壁には、ウエハ２に各スパ
ツタ層を形成するためのタゲツト５ａ，５ｂ，５
ｃが設けられ、各ターゲツト５ａ〜５ｃには夫々
カバー６が設けられている。これらのカバー６
は、ターゲツト５ａ〜５ｃからの粒子が別のター
ゲツト５ａ〜５ｃに付着するのを防ぐためのもの
である。 1 in the figure is a chamber. An inlet 3 for transferring the wafer 2 is provided on the side wall of the chamber 1.
A rotatable carrier 4 on which the wafer is propped up is provided in the center. Further, targets 5a, 5b, 5 for forming sputter layers on the wafer 2 are provided on the inner wall of the chamber 1.
A cover 6 is provided for each target 5a to 5c. These covers 6
This is to prevent particles from the targets 5a-5c from adhering to other targets 5a-5c.
しかしながら、従来技術によれば、外部から直
接チヤンバー１内にウエハ２を搬送するため、ウ
エハ２が表面にゴミなどの不純物や、水分等を付
着した状態でチヤンバー１内に搬送される。ま
た、キヤリア４を回動する際、ゴミなどの不純物
が発生し、これがそのままウエハ２に付着し易
い。従つて、ウエハ２の素子特性に悪影響をもた
らし、歩留りの低下を招く。 However, according to the prior art, since the wafer 2 is directly transferred into the chamber 1 from the outside, the wafer 2 is transferred into the chamber 1 with impurities such as dust, moisture, etc. attached to its surface. Further, when the carrier 4 is rotated, impurities such as dust are generated, and these impurities tend to adhere to the wafer 2 as they are. Therefore, this has an adverse effect on the device characteristics of the wafer 2, leading to a decrease in yield.
（発明が解決しようとする問題点）
本発明は上記事情に鑑みてなされたもので、ウ
エハ搬送時にウエハにゴミなどの不純物や水分等
が付着することを抑制し、もつて素子特性を向上
し得る歩留りの高い真空処理装置を提供すること
を目的とする。(Problems to be Solved by the Invention) The present invention has been made in view of the above circumstances, and it suppresses the adhesion of impurities such as dust and moisture to the wafer during wafer transportation, thereby improving device characteristics. The purpose of the present invention is to provide a vacuum processing apparatus with high yield.
［発明の構成］
（問題点を解決するための手段）
本発明は、ロード室と真空処理室間に密閉性を
有するゲートバルブを介して中間室を設けるとと
もに、中間室内の真空度を真空処理室内のそれよ
りも高く維持することを特徴とする。[Structure of the Invention] (Means for Solving the Problems) The present invention provides an intermediate chamber between a load chamber and a vacuum processing chamber via a gate valve having airtight properties, and also reduces the degree of vacuum in the intermediate chamber by vacuum processing. It is characterized by being maintained higher than that indoors.
具体的には、本発明は、ウエハをセツトしたカ
セツトを載置するローダ室と、前記ウエハに対し
て膜堆積又はエツチングを行う複数の真空処理室
と、前記ローダ室及び真空処理室間に密閉性を有
するゲートを介して設けられ、かつ前記真空処理
室に比べて真空度の高い中間室と、この中間室を
高真空にする手段とを具備することを要旨とす
る。 Specifically, the present invention provides a loader chamber in which a cassette containing wafers is placed, a plurality of vacuum processing chambers in which film deposition or etching is performed on the wafers, and a sealed space between the loader chamber and the vacuum processing chambers. The main feature of the present invention is to include an intermediate chamber which is provided through a gate having a high degree of vacuum and has a higher degree of vacuum than the vacuum processing chamber, and a means for making the intermediate chamber a high vacuum.
（作用）
本発明においては、中間室内の真空度がロード
室や真空処理室内のそれよりも高く設定されるた
め、ロード室から搬送されるウエハ表面にゴミや
水分等が付着していたりあるいは搬送時にゴミが
発生しても、ゲートバルブを開いてウエハをロー
ド室から高真空処理室へ搬送しようとしたとき、
それらの不純物等が中間室へ排出され、特性の優
れたウエハを得ることができる。(Function) In the present invention, since the degree of vacuum in the intermediate chamber is set higher than that in the load chamber or vacuum processing chamber, dust, moisture, etc. may adhere to the surface of the wafer transferred from the load chamber, or Even if dust sometimes occurs, when the gate valve is opened and the wafer is transferred from the load chamber to the high vacuum processing chamber,
These impurities are discharged to the intermediate chamber, and a wafer with excellent characteristics can be obtained.
（実施例）
以下、本発明の一実施例を第１図を参照して説
明する。(Example) An example of the present invention will be described below with reference to FIG.
図中の１１は、スパツタリング装置である。こ
の装置１１には、ロード室１２、第１〜第４のス
パツタ室（真空処理室）１３，１４，１５，１
６、及びアンローダ室１７が設けられている。ま
た、前記ロード室１２とスパツタ室１３〜１６間
には中間室１８，１９，２０が設けられ、かつロ
ード室１２、アンローダ室１７とスパツタ室１
３，１６間には中間室２１が設けられている。 11 in the figure is a sputtering device. This device 11 includes a load chamber 12, first to fourth sputtering chambers (vacuum processing chambers) 13, 14, 15, 1
6 and an unloader chamber 17 are provided. Intermediate chambers 18, 19, and 20 are provided between the load chamber 12 and the sputter chambers 13 to 16, and the load chamber 12, the unloader chamber 17, and the sputter chamber 1
An intermediate chamber 21 is provided between 3 and 16.
前記ローダ室１２はウエハをセツトしたカセツ
トを載置する部屋であり、第１のスパツタ室１３
側にはゲートバルブ２２ａが設けられている。ま
た、前記第１のスパツタ室１３にはゲードバルブ
２２ｂ，２２ｃ、第２のスパツタ室１４にはゲー
ドバルブ２２ｄ，２２ｅ、第３のスパツタ室１５
にはゲードバルブ２２ｆ，２２ｇ、第４のスパツ
タ室１６にはゲードバルブ２２ｈ，２２ｉ、アン
ローダ室１７にはゲートバルブ２２ｊが設けられ
ている。 The loader chamber 12 is a chamber in which a cassette containing wafers is placed, and the first sputter chamber 13
A gate valve 22a is provided on the side. Further, the first sputtering chamber 13 has gate valves 22b and 22c, the second sputtering chamber 14 has gate valves 22d and 22e, and the third sputtering chamber 15.
gate valves 22f and 22g, gate valves 22h and 22i are provided in the fourth sputtering chamber 16, and gate valve 22j is provided in the unloader chamber 17.
前記中間室１８〜２０は上部で互いに連結さ
れ、ポンプ（図示せず）の作動により排気口２３
から各中間室内が高真空にされるようになつてい
る。また、同様にして中間室２１にも排気口２４
が取付けられている。なお、作動時中間室１８〜
２１内の真空度はスパツタ室１３〜１６及びアン
ローダ室１７内のそれよりも高く設定されてい
る。 The intermediate chambers 18 to 20 are connected to each other at the upper part, and an exhaust port 23 is opened by the operation of a pump (not shown).
The interior of each intermediate chamber is kept under high vacuum. Similarly, an exhaust port 24 is also provided in the intermediate chamber 21.
is installed. In addition, during operation, the intermediate chamber 18~
The degree of vacuum in the sputter chamber 21 is set higher than that in the sputter chambers 13 to 16 and the unloader chamber 17.
こうした構造のスパツタリング装置において、
ロード室１２にセツトされたウエハは、ゲートバ
ルブ２２ａ，２２ｂを開いた状態で中間室２１を
経て第１のスパツタ室１３へ移動する。この際、
中間室２１内の真空度はロード室１２内のそれよ
りも高く設定されているため、ウエハに付着した
不純物や水分等は中間室２１に排出される。つづ
いて、ウエハはゲートバルブ２２ｃ，２２ｄを開
いた状態で第１のスパツタ室１３から第２のスパ
ツタ室１４へ移動する。以後、ウエハは第２のス
パツタ室１４から中間室１９、第３のスパツタ室
１５、中間室２０、第４のスパツタ室１６、中間
室２１を経てアンローダ室１７へ搬送される。 In a sputtering device with this structure,
The wafer set in the load chamber 12 moves to the first sputtering chamber 13 via the intermediate chamber 21 with the gate valves 22a and 22b open. On this occasion,
Since the degree of vacuum in the intermediate chamber 21 is set higher than that in the load chamber 12, impurities, moisture, etc. attached to the wafer are discharged to the intermediate chamber 21. Subsequently, the wafer is moved from the first sputtering chamber 13 to the second sputtering chamber 14 with the gate valves 22c and 22d open. Thereafter, the wafer is transferred from the second sputtering chamber 14 to the unloader chamber 17 via the intermediate chamber 19, the third sputtering chamber 15, the intermediate chamber 20, the fourth sputtering chamber 16, and the intermediate chamber 21.
しかして、本発明に係るスパツタリング装置に
よれば、ロード室１２と第１のスパツタ室１３間
に中間室２１を設け、かつポンプ（図示せず）に
連結した排気口２４よつて前記中間室２１内の真
空度を前記スパツタ室１３内のそれよりも高く維
持した構造となつているため、ロード室１２から
搬送されるウエハ表面にゴミや水分等が付着して
いたりあるいは搬送時にゴミが発生しても、ゲー
トバルブ２２ａ，２２ｂを開いてウエハをロード
室から高真空処理室へ搬送しようとしたとき、そ
れらの不純物等が中間室２１へ排出され、特性の
優れたウエハを得ることができる。従つて、歩留
りを向上できる。 According to the sputtering apparatus according to the present invention, the intermediate chamber 21 is provided between the load chamber 12 and the first sputtering chamber 13, and the intermediate chamber 21 is provided with an exhaust port 24 connected to a pump (not shown). Since the vacuum level inside the sputtering chamber 13 is maintained higher than that in the sputtering chamber 13, dust and moisture may adhere to the surface of the wafer transferred from the load chamber 12, or dust may be generated during the transfer. However, when the gate valves 22a and 22b are opened to transfer the wafer from the load chamber to the high vacuum processing chamber, these impurities and the like are discharged to the intermediate chamber 21, making it possible to obtain a wafer with excellent characteristics. Therefore, the yield can be improved.
なお、上記実施例では多層スパツタの場合につ
いて述べたが、これに限定されず、反応性スパツ
タ、バイアススパツタなどの組合せ、あるいはエ
ツチングとスパツタの組合せ等も可能である。 In the above embodiments, the case of multilayer sputtering has been described, but the present invention is not limited to this, and a combination of reactive sputtering, bias sputtering, etc., or a combination of etching and sputtering, etc. is also possible.
また、上記実施例ではスパツタ室４つある場合
について述べたが、これに限定されるものでは勿
論ない。 Further, in the above embodiment, a case was described in which there were four sputtering chambers, but the present invention is of course not limited to this.
［発明の効果］
以上詳述した如く本発明によれば、ウエハ搬送
時にウエハにゴミなどの不純物や水分等が付着す
ることを抑制し、もつて素子特性を向上し得る歩
留りの高い真空処理装置を提供できる。[Effects of the Invention] As detailed above, the present invention provides a high-yield vacuum processing apparatus that suppresses the adhesion of impurities such as dust and moisture to wafers during wafer transport, and improves device characteristics. can be provided.
第１図は本発明の一実施例に係るスパツタリン
グ装置の説明図、第２図は従来のスパツタリング
装置を説明図である。
１２……ロード室、１３〜１６……スパツタ
室、１７……アンローダ室、１８〜２１……中間
室、２２ａ，２２ｊ……ゲートバルブ、２３，２
４……排気口。
FIG. 1 is an explanatory diagram of a sputtering apparatus according to an embodiment of the present invention, and FIG. 2 is an explanatory diagram of a conventional sputtering apparatus. 12...Load chamber, 13-16...Sputter chamber, 17...Unloader chamber, 18-21...Intermediate chamber, 22a, 22j...Gate valve, 23,2
4...Exhaust port.
Claims (1)
ダ室と、前記ウエハに対して膜堆積又はエツチン
グを行う複数の真空処理室と、前記ローダ室及び
真空処理室間に密閉性を有するゲートを介して
夫々設けられ、かつ前記真空処理室に比べて真空
度の高い中間室と、この中間室を高真空にする手
段とを具備することを特徴とする真空処理装置。 ２ 真空処理室がスパツタ室であることを特徴と
する特許請求の範囲第１項記載の真空処理装置。[Scope of Claims] 1. A loader chamber in which a cassette with wafers is placed, a plurality of vacuum processing chambers in which film deposition or etching is performed on the wafers, and airtightness between the loader chamber and the vacuum processing chambers. 1. A vacuum processing apparatus comprising: intermediate chambers which are respectively provided through gates having a higher degree of vacuum than the vacuum processing chamber; and means for bringing the intermediate chambers into a high vacuum. 2. The vacuum processing apparatus according to claim 1, wherein the vacuum processing chamber is a sputtering chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13624687A JPS63303060A (en) | 1987-05-30 | 1987-05-30 | Vacuum treatment equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13624687A JPS63303060A (en) | 1987-05-30 | 1987-05-30 | Vacuum treatment equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63303060A JPS63303060A (en) | 1988-12-09 |
| JPH0138872B2 true JPH0138872B2 (en) | 1989-08-16 |
Family
ID=15170703
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13624687A Granted JPS63303060A (en) | 1987-05-30 | 1987-05-30 | Vacuum treatment equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63303060A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5376212A (en) * | 1992-02-18 | 1994-12-27 | Tokyo Electron Yamanashi Limited | Reduced-pressure processing apparatus |
| CH687987A5 (en) * | 1993-05-03 | 1997-04-15 | Balzers Hochvakuum | A process for the increase of the deposition rate in a plasma discharge space and plasma chamber. |
| US5672239A (en) * | 1995-05-10 | 1997-09-30 | Tegal Corporation | Integrated semiconductor wafer processing system |
| CN1608308A (en) | 2001-11-13 | 2005-04-20 | Fsi国际公司 | Reduced footprint tool for automated processing of microelectronic substrates |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5763677A (en) * | 1980-10-03 | 1982-04-17 | Hitachi Ltd | Continuous vacuum treating device |
| JPS59208074A (en) * | 1983-05-13 | 1984-11-26 | Toshiba Corp | Sheet type film forming device |
-
1987
- 1987-05-30 JP JP13624687A patent/JPS63303060A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5763677A (en) * | 1980-10-03 | 1982-04-17 | Hitachi Ltd | Continuous vacuum treating device |
| JPS59208074A (en) * | 1983-05-13 | 1984-11-26 | Toshiba Corp | Sheet type film forming device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63303060A (en) | 1988-12-09 |
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|---|---|---|---|
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