JPH0136983B2 - - Google Patents
Info
- Publication number
- JPH0136983B2 JPH0136983B2 JP58144058A JP14405883A JPH0136983B2 JP H0136983 B2 JPH0136983 B2 JP H0136983B2 JP 58144058 A JP58144058 A JP 58144058A JP 14405883 A JP14405883 A JP 14405883A JP H0136983 B2 JPH0136983 B2 JP H0136983B2
- Authority
- JP
- Japan
- Prior art keywords
- siloxane
- photosensitive
- polyladder
- hydrocarbon groups
- saturated hydrocarbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 25
- -1 aromatic azide compound Chemical class 0.000 claims description 18
- 239000011342 resin composition Substances 0.000 claims description 14
- 229920002050 silicone resin Polymers 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 9
- 229930195734 saturated hydrocarbon Natural products 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 4
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 4
- 239000010410 layer Substances 0.000 description 22
- 150000001875 compounds Chemical class 0.000 description 12
- 238000000034 method Methods 0.000 description 12
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 8
- 150000002430 hydrocarbons Chemical group 0.000 description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical compound C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229920006389 polyphenyl polymer Polymers 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- RFFLAFLAYFXFSW-UHFFFAOYSA-N 1,2-dichlorobenzene Chemical compound ClC1=CC=CC=C1Cl RFFLAFLAYFXFSW-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
- GUUVPOWQJOLRAS-UHFFFAOYSA-N Diphenyl disulfide Chemical compound C=1C=CC=CC=1SSC1=CC=CC=C1 GUUVPOWQJOLRAS-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 244000028419 Styrax benzoin Species 0.000 description 2
- 235000000126 Styrax benzoin Nutrition 0.000 description 2
- 235000008411 Sumatra benzointree Nutrition 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 229960002130 benzoin Drugs 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- KZTYYGOKRVBIMI-UHFFFAOYSA-N diphenyl sulfone Chemical compound C=1C=CC=CC=1S(=O)(=O)C1=CC=CC=C1 KZTYYGOKRVBIMI-UHFFFAOYSA-N 0.000 description 2
- 235000019382 gum benzoic Nutrition 0.000 description 2
- 230000003301 hydrolyzing effect Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- IVRMZWNICZWHMI-UHFFFAOYSA-N Azide Chemical class [N-]=[N+]=[N-] IVRMZWNICZWHMI-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 239000012954 diazonium Substances 0.000 description 1
- 238000006471 dimerization reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000005055 methyl trichlorosilane Substances 0.000 description 1
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000005054 phenyltrichlorosilane Substances 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 235000011118 potassium hydroxide Nutrition 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 150000003464 sulfur compounds Chemical class 0.000 description 1
- HSVFKFNNMLUVEY-UHFFFAOYSA-N sulfuryl diazide Chemical class [N-]=[N+]=NS(=O)(=O)N=[N+]=[N-] HSVFKFNNMLUVEY-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- ORVMIVQULIKXCP-UHFFFAOYSA-N trichloro(phenyl)silane Chemical compound Cl[Si](Cl)(Cl)C1=CC=CC=C1 ORVMIVQULIKXCP-UHFFFAOYSA-N 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Formation Of Insulating Films (AREA)
Description
【発明の詳細な説明】
本発明は半導体装置の絶縁層の製造法に関す
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing an insulating layer of a semiconductor device.
本発明において絶縁層とは、多層配線における
層間絶縁膜及び層間絶縁膜が表面層であるパツシ
ベーシヨン膜を意味する。 In the present invention, the insulating layer refers to an interlayer insulating film in a multilayer wiring and a passivation film in which the interlayer insulating film is a surface layer.
従来、半導体装置の絶縁層の形成に際しては、
そのパターンニングの為に感光性レジストを各層
上に塗布し、露光、現像し、そして各層をエツチ
ングするという方法がとられている。これらのレ
ジストを用いたプロセスは非常にはん雑であり、
また多くの副資材を必要とする。 Conventionally, when forming an insulating layer of a semiconductor device,
For patterning, a method is used in which a photosensitive resist is applied onto each layer, exposed to light, developed, and then each layer is etched. The process using these resists is very complicated;
It also requires many auxiliary materials.
このはん雑さを解消するため、近年、感光性の
絶縁材料を用いるプロセスが開発されているが、
絶縁材料にはそのプロセス上非常に高い耐熱性が
必要であるため、通常レジストに用いられる様な
感光性有機材料は用いることができない。最近こ
の問題を解決するため感光性ポリイミドを用いた
プロセスが開発されたが、この耐熱性は決して従
来のポリイミドを上まわるものではなく、半導体
の製造プロセスに大きな制限をともなうものであ
つた。 In order to eliminate this complexity, processes using photosensitive insulating materials have been developed in recent years.
Since the insulating material requires extremely high heat resistance due to its process, photosensitive organic materials such as those normally used in resists cannot be used. Recently, a process using photosensitive polyimide was developed to solve this problem, but the heat resistance of this material was by no means superior to that of conventional polyimide, and it was accompanied by major limitations on the semiconductor manufacturing process.
本発明者らはこれら従来の半導体装置の絶縁層
の製造法の欠点に鑑み、鋭意検討した結果、本発
明に至つたものである。 The inventors of the present invention have conducted extensive studies in view of the drawbacks of these conventional methods for manufacturing insulating layers of semiconductor devices, and as a result, have arrived at the present invention.
すなわち本発明は、
(A) 一般式
（ただし、R1及びR2は、一価の飽和炭化水素
基または一価の置換飽和炭化水素基であり、こ
れらは同一でも相違してもよく、ｎは正の整数
である）で示されるポリラダーシロキサンおよ
び／または一般式
（ただし、R3及びR4は、一価の飽和炭化水素
基または一価の置換飽和炭化水素基であり、こ
れらは同一でも相違してもよく、ｍは正の整数
である）で示される末端ヒドロキシポリラダー
シロキサンならびに
(B) 芳香族アジド化合物および／または芳香族ス
ルホニルアジド化合物
を含有する感光性シリコーン樹脂組成物を配線層
の形成された基材の上に塗布し、マスクを介して
露光、現像後、必要によりさらに加熱することを
特徴とする半導体装置の絶縁層の製造法に関す
る。 That is, the present invention provides (A) general formula (However, R 1 and R 2 are monovalent saturated hydrocarbon groups or monovalent substituted saturated hydrocarbon groups, and they may be the same or different, and n is a positive integer.) Polyladder siloxane and/or general formula (However, R 3 and R 4 are monovalent saturated hydrocarbon groups or monovalent substituted saturated hydrocarbon groups, and they may be the same or different, and m is a positive integer.) A photosensitive silicone resin composition containing a terminal hydroxypolyladder siloxane and (B) an aromatic azide compound and/or an aromatic sulfonyl azide compound is applied onto the base material on which the wiring layer is formed, and exposed to light through a mask. , relates to a method for manufacturing an insulating layer of a semiconductor device, which is characterized by further heating if necessary after development.
本発明において絶縁層の製造に用いられる感光
性シリコーン樹脂組成物はベースレジンとなる上
記のポリラダーシロキサンおよび／または末端ヒ
ドロキシポリラダーシロキサンと、感光性化合物
である芳香族アジド化合物および／または芳香族
スルホニルアジド化合物を適当な溶剤の存在下で
混合することにより容易に得られる。また上記の
感光性シリコーン樹脂組成物はベースレジンがラ
ダー状のシロキサン構造を持つているためその耐
熱性が非常にすぐれており、例えば側鎖がフエニ
ル基であるポリフエニルラダーシロキサンを用い
た場合は、その熱分解開始温度が、ポリイミドの
場合高くても480〜500℃であるのに対し、550℃
以上である。また、ポリラダーシロキサンは熱分
解開始温度以上に加熱した場合、その側鎖の部分
が熱分解し、主鎖のシロキサンの骨格がSiO2と
して大部分残るため、この性質を利用して露光、
現像後に加熱して感光性化合物および側鎖部分を
熱分解し、パターン化されたSiO2膜を形成する
ことも可能である。感光性のポリイミドにおいて
は感光性化合物を全て熱分解しようとすると、主
鎖のポリイミド骨格も熱分解されてしまうため、
この様な手法を用いることは不可能である。 The photosensitive silicone resin composition used in the production of the insulating layer in the present invention contains the above-mentioned polyladder siloxane and/or terminal hydroxy polyladder siloxane as a base resin, and an aromatic azide compound and/or an aromatic compound as a photosensitive compound. It can be easily obtained by mixing a sulfonyl azide compound in the presence of a suitable solvent. In addition, the above-mentioned photosensitive silicone resin composition has extremely high heat resistance because the base resin has a ladder-like siloxane structure. For example, when polyphenyl ladder siloxane whose side chain is a phenyl group is used, , its thermal decomposition onset temperature is at most 480 to 500°C in the case of polyimide, whereas it is 550°C.
That's all. In addition, when polyladder siloxane is heated above its thermal decomposition initiation temperature, its side chains are thermally decomposed and most of the main chain siloxane skeleton remains as SiO2 .
It is also possible to thermally decompose the photosensitive compound and side chain portion by heating after development to form a patterned SiO 2 film. In photosensitive polyimide, if you try to thermally decompose all the photosensitive compounds, the main chain polyimide skeleton will also be thermally decomposed.
It is impossible to use such a method.
以下、本発明を詳細に説明する。 The present invention will be explained in detail below.
本発明の半導体装置の絶縁層の製造に用いられ
る感光性シリコーン樹脂組成物のベースレジンで
あるポリラダーシロキサンは、特公昭40−15989
号公報、米国特許第3017386号明細書等に示され、
その製造法としては、例えば一般式RSiCl3（ここ
でＲは一価の炭化水素基である）で示されるトリ
クロロシランを加水分解して得られた中間体を苛
性カリ等のアルカリ触媒を用いて高分子化するこ
とによつて得られる。 Polyladder siloxane, which is the base resin of the photosensitive silicone resin composition used for manufacturing the insulating layer of the semiconductor device of the present invention, is
No. 3,017,386, etc.,
As for its production method, for example, an intermediate obtained by hydrolyzing trichlorosilane represented by the general formula RSiCl 3 (where R is a monovalent hydrocarbon group) is heated using an alkaline catalyst such as caustic potash. Obtained by molecularization.
末端ヒドロキシポリラダーシロキサンは特開昭
53−88099号公報等に示される方法により得られ
る。 Terminal hydroxy polyladder siloxane is manufactured by Tokkai Sho.
It can be obtained by the method shown in Publication No. 53-88099 and the like.
本発明における上記のポリラダーシロキサンま
たは末端ヒドロキシポリラダーシロキサンを示す
上記の式において、R1、R2、R3、R4は一価の炭
化水素基または一価の置換炭化水素基であり、こ
れらは同一であつても相違してもよく、例えばメ
チル基、エチル基、プロピル基等のアルキル基、
フエニル基、置換フエニル基等の芳香族炭化水素
基、これらのハロゲン置換体などがあるが、本発
明の目的である耐熱性の高い絶縁層を得るために
は、ポリラダーシロキサン膜とする場合にはフエ
ニル基、また熱分解してSiO2膜とする場合には
低級アルキル基が好ましい。上式においてｎ、ｍ
は正の整数であるが、通常50より大なる整数であ
る。 In the above formula showing the above polyladder siloxane or terminal hydroxy polyladder siloxane in the present invention, R 1 , R 2 , R 3 , and R 4 are a monovalent hydrocarbon group or a monovalent substituted hydrocarbon group, These may be the same or different; for example, alkyl groups such as methyl, ethyl, and propyl groups;
There are aromatic hydrocarbon groups such as phenyl groups and substituted phenyl groups, and halogen-substituted products thereof, but in order to obtain an insulating layer with high heat resistance, which is the objective of the present invention, when forming a polyladder siloxane film, is preferably a phenyl group, or a lower alkyl group when thermally decomposed to form a SiO 2 film. In the above formula, n, m
is a positive integer, usually greater than 50.
また上記感光性シリコーン樹脂組成物に用いら
れる感光性化合物の芳香族アジド化合物および芳
香族スルホニルアジド化合物は光照射により活性
種ナイトレンを生成し、この活性種は二量化、二
重結合への付加、水素引き抜き反応などを起こす
ことが知られている。従つてポリラダーシロキサ
ンまたは末端ヒドロキシポリラダーシロキサン中
に添加されたこれらの感光性化合物は上記反応を
経由して、その光照射部と未照射部に現像液に対
する溶解性の差異をもたらしパターンの製造が可
能となる。 Further, the aromatic azide compound and the aromatic sulfonyl azide compound of the photosensitive compound used in the photosensitive silicone resin composition generate active species nitrene upon irradiation with light, and this active species undergoes dimerization, addition to double bonds, It is known to cause hydrogen abstraction reactions. Therefore, these photosensitive compounds added to polyladder siloxane or terminal hydroxy polyladder siloxane cause a difference in solubility in the developer between the light-irradiated area and the non-irradiated area through the above reaction, resulting in pattern production. becomes possible.
本発明に用いられる芳香族アジド化合物として
は例えば、
等のモノアジド化合物
等のビスアジド化合物などがある。また、芳香族
スルホニルアジド化合物としては、例えば
等のモノスルホニルアジド化合物
等のビススルホニルアジド化合物などがある。こ
れらの感光性化合物は単独でまたは二種以上を併
用して用いることができる。 Examples of aromatic azide compounds used in the present invention include: monoazide compounds such as There are bisazide compounds such as Further, as aromatic sulfonyl azide compounds, for example, Monosulfonyl azide compounds such as There are bissulfonyl azide compounds such as. These photosensitive compounds can be used alone or in combination of two or more.
本発明の半導体装置の絶縁層形成に用いられる
上記の感光性シリコーン樹脂組成物は、通常ポリ
ラダーシロキサンおよび／または末端ヒドロキシ
ポリラダーシロキサンと感光性化合物を適当な有
機溶媒に溶解した状態で使用されるが、この場合
に用いる溶媒としてはポリラダーシロキサンおよ
び／または末端ヒドロキシポリラダーシロキサン
と感光性化合物のいずれをも溶解することが望ま
しく、例えばベンゼン、トルエン、キシレン等の
芳香族炭化水素、アセトン、メチルエチルケトン
等のケトン系溶媒などが用いられる。これらは単
独で用いてもよいし混合して用いることも可能で
ある。 The photosensitive silicone resin composition used for forming the insulating layer of the semiconductor device of the present invention is usually used in a state in which polyladder siloxane and/or terminal hydroxy polyladder siloxane and a photosensitive compound are dissolved in an appropriate organic solvent. However, the solvent used in this case is preferably one that can dissolve both the polyladder siloxane and/or the terminal hydroxy polyladder siloxane and the photosensitive compound, such as aromatic hydrocarbons such as benzene, toluene, and xylene, acetone, A ketone solvent such as methyl ethyl ketone is used. These may be used alone or in combination.
また上記の感光性シリコーン樹脂組成物には
種々の増感剤を併用することが可能である。増感
剤は感光性化合物の感光波長域をひろげたり、感
光性化合物へ光エネルギーを効率良く与えるなど
して感光感度の向上をはかるものであり、本発明
においては、例えばベンゾイン又はベンゾインエ
ーテル類、ベンジルとその誘導体、アリールジア
ゾニウム塩、アントラキノンとその誘導体、アセ
トフエノン又はその誘導体、ジフエニルジスルフ
イド等のイオウ化合物、ベンゾフエノン又はその
誘導体などが使用可能であり、これらは一種また
は二種以上の混合物として用いられる。 Furthermore, various sensitizers can be used in combination with the above photosensitive silicone resin composition. Sensitizers aim to improve photosensitivity by expanding the sensitive wavelength range of photosensitive compounds and efficiently imparting light energy to photosensitive compounds. In the present invention, for example, benzoin or benzoin ethers, Benzyl and its derivatives, aryl diazonium salts, anthraquinone and its derivatives, acetophenone or its derivatives, sulfur compounds such as diphenyl disulfide, benzophenone or its derivatives, etc. can be used, and these can be used singly or as a mixture of two or more. used.
次に本発明の半導体装置の絶縁層の製造法につ
いて具体的に述べる。 Next, a method for manufacturing an insulating layer of a semiconductor device according to the present invention will be specifically described.
まず、配線層が形成されたシリコンウエーハ、
ガリウム−ヒ素ウエーハ、ガラス、セラミツク等
の基材上に、上記の感光性シリコーン樹脂組成物
をスピンナ等を用いて塗布する。次に溶媒を80℃
〜150℃、好ましくは100℃〜120℃の温度で10分
〜60分、好ましくは20分〜30分乾燥して除去した
後、マスクを介して露光を行なう。この際露光の
条件は用いる感光性化合物によつて異なるが、特
に制限はない。その後前述の溶媒、希アルカリ液
等を用いて現像を行ないパターンを形成する。現
像条件は膜厚、パターン形状、寸法などによつて
異なるが、特に制限はない。 First, a silicon wafer with a wiring layer formed thereon,
The photosensitive silicone resin composition described above is applied onto a substrate such as a gallium-arsenic wafer, glass, or ceramic using a spinner or the like. Then add the solvent to 80℃
After drying and removing at a temperature of ~150°C, preferably 100°C to 120°C for 10 minutes to 60 minutes, preferably 20 minutes to 30 minutes, exposure is performed through a mask. At this time, the exposure conditions vary depending on the photosensitive compound used, but are not particularly limited. Thereafter, development is performed using the above-mentioned solvent, dilute alkaline solution, etc. to form a pattern. Development conditions vary depending on film thickness, pattern shape, dimensions, etc., but are not particularly limited.
次にパターン化された該組成物膜を必要により
適当な温度で熱処理して、絶縁層とされる。溶媒
を完全に除去するためにあるいは末端ヒドロキシ
ポリラダーシロキサンを用いた場合にポリラダー
シロキサン膜とするためには、現像後に250℃〜
500℃、好ましくは300℃〜400℃の温度で熱処理
することが好ましい。またポリラダーシロキサン
の側鎖を熱分解して、パターン化されたSiO2膜
とするためには500℃以上、好ましくは600℃〜
800℃の温度で熱処理することが好ましい。 Next, if necessary, the patterned composition film is heat-treated at an appropriate temperature to form an insulating layer. In order to completely remove the solvent or to form a polyladder siloxane film when terminal hydroxy polyladder siloxane is used, the temperature should be 250°C or higher after development.
Preferably, the heat treatment is carried out at a temperature of 500°C, preferably 300°C to 400°C. In addition, in order to thermally decompose the side chains of polyladder siloxane to form a patterned SiO 2 film, the temperature should be 500°C or higher, preferably 600°C or higher.
Preferably, the heat treatment is carried out at a temperature of 800°C.
以下、実施例により本発明を説明する。 The present invention will be explained below with reference to Examples.
実施例 １
特公昭40−15989号公報の参考例１及び実施例
１に従つてフエニルトリクロロシランを加水分解
して中間体を製造した後、この中間体をｏ−ジク
ロロベンゼンに溶解し、苛性カリを触媒として高
分子化してポリフエニルラダーシロキサンを製造
した。こうして得られたポリフエニルラダーシロ
キサン（重量平均分子量20万）10gに３，3′−ジ
アジドジフエニルスルホン1gを添加し、ベンゼ
ン100gに溶解して感光性シリコーン樹脂組成物
を作製した。Example 1 An intermediate was produced by hydrolyzing phenyltrichlorosilane according to Reference Example 1 and Example 1 of Japanese Patent Publication No. 40-15989, and then this intermediate was dissolved in o-dichlorobenzene and dissolved in caustic potassium. was polymerized using a catalyst to produce polyphenyl ladder siloxane. 1 g of 3,3'-diazide diphenyl sulfone was added to 10 g of the thus obtained polyphenyl ladder siloxane (weight average molecular weight: 200,000) and dissolved in 100 g of benzene to prepare a photosensitive silicone resin composition.
次に第一層のAl配線層が形成されたシリコン
ウエーハ上に上記感光性シリコーン樹脂組成物を
スピンナを用いて塗布し、120℃で30分乾燥し、
1.0μmの膜を形成した。 Next, the photosensitive silicone resin composition was applied onto the silicon wafer on which the first Al wiring layer was formed using a spinner, and dried at 120°C for 30 minutes.
A 1.0 μm film was formed.
次に石英マスク（大日本印刷株式会社製DNP
フアインラインテストパターン１）を介してXe
−Hg灯により50mW／cm2で光照射した後、トル
エンで２分間現像をし良好なパターンが得られ
た。 Next, a quartz mask (DNP manufactured by Dai Nippon Printing Co., Ltd.)
Xe via fine line test pattern 1)
- After irradiating with light at 50 mW/cm 2 using a Hg lamp, a good pattern was obtained by developing with toluene for 2 minutes.
次に、このパターン化された膜を400℃で１時
間熱処理し、パターン化された絶縁層を得た。こ
うして得られた絶縁層はその後第２層の配線層を
形成する際に500℃で加熱しても何ら変化が認め
られなかつた。 Next, this patterned film was heat treated at 400° C. for 1 hour to obtain a patterned insulating layer. Even when the insulating layer thus obtained was heated at 500° C. during subsequent formation of a second wiring layer, no change was observed.
実施例 ２
メチルトリクロロシランを用いて特開昭53−
88099号公報の実施例１に従つて製造された末端
ヒドロキシポリメチルラダーシロキサン（重量平
均分子量２万）10gにパラアジド安息香酸２−
（ジメチルアミノ）エチル3gを添加し、トルエン
150gに溶解して感光性シリコーン樹脂組成物を
作製した。この組成物を実施例１と同様の処理に
より露光、現像した後、400℃で30分さらに700℃
で１時間熱処理を行ない。パターン化された絶縁
層を形成した。こうして得られた絶縁層は完全に
SiO2膜となつており、その後のいかなるプロセ
スにも熱的制限を与えないものであつた。Example 2 Using methyltrichlorosilane, JP-A-53-
10 g of terminal hydroxy polymethyl ladder siloxane (weight average molecular weight 20,000) produced according to Example 1 of Publication No. 88099 was added with 2-paraazidobenzoic acid.
Add 3g of (dimethylamino)ethyl and toluene
A photosensitive silicone resin composition was prepared by dissolving 150 g of the photosensitive silicone resin composition. This composition was exposed and developed in the same manner as in Example 1, then heated to 400°C for 30 minutes and then heated to 700°C.
Heat treatment was performed for 1 hour. A patterned insulating layer was formed. The insulation layer thus obtained is completely
It was a SiO 2 film and did not impose any thermal restrictions on any subsequent processes.
以上実施例にも示した通り、本発明において
は、それ自体感光性を有し、なおかつ、十分な耐
熱性をもつ膜を形成可能な感光性シリコーン樹脂
組成物を用いて絶縁層を形成するため、従来の様
なはん雑なレジストプロセスを用いることなく、
非常に簡便に多層配線を形成できる。 As shown in the examples above, in the present invention, an insulating layer is formed using a photosensitive silicone resin composition that is itself photosensitive and can form a film with sufficient heat resistance. , without using the conventional complicated resist process.
Multilayer wiring can be formed very easily.
Claims (1)
基または一価の置換飽和炭化水素基であり、こ
れらは同一でも相違してもよく、ｎは正の整数
である）で示されるポリラダーシロキサンおよ
び／または一般式 （ただし、R3及びR4は、一価の飽和炭化水素
基または一価の置換飽和炭化水素基であり、こ
れらは同一でも相違してもよく、ｍは正の整数
である）で示される末端ヒドロキシポリラダー
シロキサンならびに (B) 芳香族アジド化合物および／または芳香族ス
ルホニルアジド化合物 を含有する感光性シリコーン樹脂組成物を配線層
の形成された基材の上に塗布し、マスクを介して
露光、現像後、必要によりさらに加熱することを
特徴とする半導体装置の絶縁層の製造法。[Claims] 1 (A) General formula (However, R 1 and R 2 are monovalent saturated hydrocarbon groups or monovalent substituted saturated hydrocarbon groups, and they may be the same or different, and n is a positive integer.) Polyladder siloxane and/or general formula (However, R 3 and R 4 are monovalent saturated hydrocarbon groups or monovalent substituted saturated hydrocarbon groups, and they may be the same or different, and m is a positive integer.) A photosensitive silicone resin composition containing a terminal hydroxypolyladder siloxane and (B) an aromatic azide compound and/or an aromatic sulfonyl azide compound is applied onto the base material on which the wiring layer is formed, and exposed to light through a mask. A method for producing an insulating layer for a semiconductor device, which comprises further heating if necessary after development.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58144058A JPS6034022A (en) | 1983-08-05 | 1983-08-05 | Manufacture of insulating layer of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58144058A JPS6034022A (en) | 1983-08-05 | 1983-08-05 | Manufacture of insulating layer of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6034022A JPS6034022A (en) | 1985-02-21 |
| JPH0136983B2 true JPH0136983B2 (en) | 1989-08-03 |
Family
ID=15353328
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58144058A Granted JPS6034022A (en) | 1983-08-05 | 1983-08-05 | Manufacture of insulating layer of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6034022A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1333146C (en) * | 1987-04-10 | 1994-11-22 | Andre Lagendijk | Method of forming silicon dioxide glass films |
| KR100519510B1 (en) * | 1998-12-18 | 2006-01-27 | 주식회사 하이닉스반도체 | Low dielectric constant compound with intramolecular macrocyclic space composed of silane and aromatic compound |
| JP4095763B2 (en) * | 2000-09-06 | 2008-06-04 | 株式会社ルネサステクノロジ | Semiconductor device and manufacturing method thereof |
| JP6268725B2 (en) | 2013-03-18 | 2018-01-31 | 富士通株式会社 | Semiconductor device and manufacturing method of semiconductor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5893240A (en) * | 1981-11-30 | 1983-06-02 | Japan Synthetic Rubber Co Ltd | Semiconductor device and preparation thereof |
-
1983
- 1983-08-05 JP JP58144058A patent/JPS6034022A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5893240A (en) * | 1981-11-30 | 1983-06-02 | Japan Synthetic Rubber Co Ltd | Semiconductor device and preparation thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6034022A (en) | 1985-02-21 |
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