JPH01312074A - Load locking device of semiconductor treating device - Google Patents

Load locking device of semiconductor treating device

Info

Publication number
JPH01312074A
JPH01312074A JP14313788A JP14313788A JPH01312074A JP H01312074 A JPH01312074 A JP H01312074A JP 14313788 A JP14313788 A JP 14313788A JP 14313788 A JP14313788 A JP 14313788A JP H01312074 A JPH01312074 A JP H01312074A
Authority
JP
Japan
Prior art keywords
ring
gap
lock device
seating surface
load lock
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14313788A
Other languages
Japanese (ja)
Inventor
Koichi Nakagawa
幸一 中川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14313788A priority Critical patent/JPH01312074A/en
Publication of JPH01312074A publication Critical patent/JPH01312074A/en
Pending legal-status Critical Current

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  • Sliding Valves (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To prevent the deterioration of a sealing member and to improve the maintainability by providing an O ring having a gap with a seating face when a valve is closed and facing the seating face at a part inside the gas discharge port of a valve disk. CONSTITUTION:The metallic O ring 21 is provided at a part inside the gas discharge port 14 of a valve disk 12 and facing the wafer inlet 4 of the seating face 17 when the valve is closed. The ring 21 is not used for sealing, and the diameter d1 is made slightly smaller than the diameter d2 of an O ring 13 used for sealing. The rings 13 and 21 are respectively pressed on or approached to the seating face 17 as shown in the figure to close the load locking device 20, and a track-shaped elliptical annular space 22 having an end gap 23 is formed inside the ring 13. The width g2 of the end gap 23 is smaller than the conventional width by the diameter d1 of the ring 21, and is narrowed. Accordingly, the velocity of the flow of an inert gas at this part is increased as compared with the conventional method, the infiltration of a gaseous etchant into the space 22 is strongly blocked, and the corrosion of the ring 13 by the gaseous etchant can be prevented.

Description

【発明の詳細な説明】 〔概要〕 半導体処理室のウェハ搬入口を開閉するロードロック装
置に関し、 シール部材の劣化を防止して保守f1の改善を図ること
を目的とし、 半導体処理室のウェハ搬入口を開閉するロードロック装
置にd3いて、弁体に、閉弁状態にd3いて、着座面の
うち上記ウェハ搬入口を囲繞する部位を押圧するシール
部材を設()、月つ該弁体のうち上記シール部材の内側
部分に形成した力゛ス叶出口より不活性ガスを吐出させ
ると共に、上記弁体のうち、上記ガス吐出口より内側の
部位に、閉弁状態において、上記着座面との間に隙間を
有して該着座面と対向Jる金属製Oリングを設(プでな
り、閉弁状態で、該金属製0リングと上記着座面との間
に隙間が形成され、上記不活性ガスが該隙間を通して上
記ウェハ搬入口側に流出するように構成する。
[Detailed Description of the Invention] [Summary] Regarding a load lock device that opens and closes the wafer loading port of a semiconductor processing chamber, the present invention aims to improve maintenance f1 by preventing deterioration of the sealing member. A load lock device that opens and closes the opening is provided with a sealing member that presses a portion of the seating surface that surrounds the wafer loading port when the valve is in the closed state. Inert gas is discharged from the force valve outlet formed on the inner side of the sealing member, and a portion of the valve body inside the gas discharge outlet is in contact with the seating surface in the closed state. A metal O-ring is provided that faces the seating surface with a gap in between, and when the valve is closed, a gap is formed between the metal O-ring and the seating surface, and the The active gas is configured to flow out to the wafer loading port side through the gap.

〔産業上の利用分野〕[Industrial application field]

本発明は半導体処理室のウェハ搬入口を開閉するロード
ロック装置に関する。
The present invention relates to a load lock device for opening and closing a wafer loading port of a semiconductor processing chamber.

第3図は一般的な半導体処理装置を示す。図中、1は半
導体処理室の1例であるコールドウオール型のCVD室
であり、電極2.及びウェハを載置するテーブル3等が
設けである1、4はウェハ搬入口である。
FIG. 3 shows a general semiconductor processing apparatus. In the figure, 1 is a cold wall type CVD chamber which is an example of a semiconductor processing chamber, and electrodes 2. Reference numerals 1 and 4 are wafer loading ports, in which tables 3 and the like on which wafers are placed are provided.

5はウェハ搬送室であり、ウェハをホールドして移動さ
せる機構(図示せず)が備えである。
Reference numeral 5 denotes a wafer transfer chamber, which is equipped with a mechanism (not shown) for holding and moving the wafer.

6はロードロック装置であり、CVD室1とウェハ搬送
室5との間に設けてあり、ウェハ搬入口4を開閉し、両
方の至を仕切る。
Reference numeral 6 denotes a load lock device, which is provided between the CVD chamber 1 and the wafer transfer chamber 5, opens and closes the wafer loading port 4, and partitions both.

7はウェハである。7 is a wafer.

CVD室1は気密性が重要である。このためロードロッ
ク装置6には高いシール杓が要求させる、1このシール
は一般にはシール部材8にJ、すM「保されている。
Airtightness of the CVD chamber 1 is important. For this reason, a high seal is required for the load lock device 6, and this seal is generally maintained in the seal member 8.

CV l)処理により、ウェハ7の表向に限らずCV 
l)室1の内壁にも膜が被着する。この膜が剥−1しパ
ーティクルとなってウェハ7を汚染Jることがある。そ
こで、CVD室1は定期的にドライエッヂングされ、膜
を除去している、。
CV l) By processing, CV is applied not only to the front side of the wafer 7
l) The film is also deposited on the inner wall of chamber 1. This film may peel off, become particles, and contaminate the wafer 7. Therefore, the CVD chamber 1 is periodically dry-edged to remove the film.

このドライエッヂングには、N「3.CF4等の和学的
反応力の強いエツヂングガスが使用される。
For this dry etching, an etching gas having a strong chemical reaction force, such as N3.CF4, is used.

このガスが上記シール部材8に触れるど、このシール部
U8を比較的早く劣化させてしまう。従って、シール部
材を比較的λ(iい期間4uに交換することが必要どさ
れる。
When this gas comes into contact with the seal member 8, the seal portion U8 deteriorates relatively quickly. Therefore, it is necessary to replace the sealing member at a relatively short period 4u.

このシール部材を交換覆る作業は比較的面倒であり、し
かもこの間半導体処理室げの稼動が停止されることにな
る。
Replacing and covering this seal member is relatively troublesome, and furthermore, the operation of the semiconductor processing chamber is stopped during this time.

このため、ロードロック装置6としては、シール部材を
交換する期間が長くなって、保守性に優れたものである
ことが必要である。
For this reason, the load lock device 6 needs to have excellent maintainability since the sealing member needs to be replaced for a long time.

(従来の技術) 第4図は従来のロードロック装置10を示す。(Conventional technology) FIG. 4 shows a conventional load lock device 10. As shown in FIG.

図中、第3図に示す構成部分と対応する部分には同一符
号を付す。
In the figure, parts corresponding to those shown in FIG. 3 are given the same reference numerals.

11は箱状のケーシング、12は板状の弁体、13は弁
体12に取り付(プれたOリング、14はガス吐出口で
ある。
11 is a box-shaped casing, 12 is a plate-shaped valve body, 13 is an O-ring attached to the valve body 12 (pulled), and 14 is a gas discharge port.

CVD室1をドライエツヂングするときには、ロードロ
ック装置10は第4図に示すように、ウェハ搬入口4を
閉じており、ガス吐出口14より不活性ガス(例えばN
2又はA、)が矢印15で示すように吐出される。
When dry etching the CVD chamber 1, the load lock device 10 closes the wafer loading port 4, as shown in FIG.
2 or A) is discharged as shown by arrow 15.

このガス流15は、弁体12と着座面17との間の環状
空間18の端部隙間19を通ってウェハ搬入口4内にこ
の周囲全体より流れ出し、矢印16で示すエツヂングガ
ス流が上記空間18内に流れ込むのを防止するためのも
のである。
This gas flow 15 passes through the end gap 19 of the annular space 18 between the valve body 12 and the seating surface 17 and flows into the wafer inlet 4 from the entire periphery thereof, and the etching gas flow shown by the arrow 16 flows into the space 18. This is to prevent water from flowing inside.

しかし、ウェハ搬入口4に臨む部分の上記端部−4= 隙間19の幅g1は、0リング13の径に等しく約5 
tnmと広い・ このため、端部隙間19にお()るガス流15の流れは
ゆるやかであり、ガス流1巳)にJ:る1ニツチングガ
スの環状空間18内への流れ込みを■止Jるノjは弱い
However, the width g1 of the gap 19 at the end facing the wafer loading port 4 is approximately 5
Therefore, the flow of the gas flow 15 in the end gap 19 is gentle, and the flow of the gas flow into the annular space 18 is stopped. Noj is weak.

このため、■ツヂングガスの一部が矢印16Aで示すよ
うに端部隙間19を通り抜けで環状空間18内に流れ込
み、0リング13に触れてしまう。
Therefore, a part of the turing gas passes through the end gap 19 and flows into the annular space 18 as shown by the arrow 16A, and comes into contact with the O-ring 13.

これにより、Oリング13が腐蝕されて劣化してしまい
、ロードロック装置10は高いシールt!1を長期間に
亘って維持することが出来ず、0リング13の交換が比
較的短時間で必要となってしまい、保守性が十分でなか
った。
As a result, the O-ring 13 is corroded and deteriorated, and the load lock device 10 has a high seal t! 1 could not be maintained for a long period of time, and the O-ring 13 had to be replaced in a relatively short period of time, resulting in insufficient maintainability.

本発明はシール部材の劣化を防止して保守性の改善を図
ることができる1」−ドロック装置を提供することを目
的とする。。
SUMMARY OF THE INVENTION An object of the present invention is to provide a 1"-dlock device that can prevent deterioration of the seal member and improve maintainability. .

〔課題を解決するための手段] 本発明は半導体処理室のウェハ搬入口を開閉するロード
ロック装置において、 弁体に、閉か状態において、着座面のうち上記ウェハ搬
入口を囲繞する部位を押圧するシール部材を設け、月つ
該弁体のうち上記シール部材の内側部分に形成したカス
吐出口より不活性カスを吐出させると共に、 上記弁体のうち、上記ガス吐出口より内側の部位に、閉
弁状態にa3いて、上記着座面との間に隙間を有して該
お座面と対向する金属製Oリングを設けてなり、 閉弁状態で、該金属製Oリングと上記着座面との間に隙
間が形成され、上記不活性ガスが該隙間を通して上記ウ
ェハ搬入口側に流出する構成としたものである。
[Means for Solving the Problems] The present invention provides a load lock device for opening and closing a wafer loading port of a semiconductor processing chamber, in which a portion of the seating surface surrounding the wafer loading port is pressed against a valve body in a closed state. discharging inert scum from a scum discharge port formed in an inner part of the sealing member of the valve body; A3 is provided with a metal O-ring that faces the seating surface with a gap between the metal O-ring and the seating surface when the valve is closed; A gap is formed between them, and the inert gas flows out to the wafer loading port side through the gap.

〔作用〕[Effect]

上記隙間はこの部分を通って流出する不活性ガスの流速
を速める。これにより、不活性ガス流によりエツチング
ガスのシール部材側への進入を阻止する力が強力となる
The gap increases the flow rate of the inert gas exiting through this section. As a result, the force of the inert gas flow to prevent the etching gas from entering the sealing member side becomes strong.

このため、シール部Hのエツチングガスによる劣化が防
止され、シール部Hの交換の期間を長くでき、保守性が
改善できる。
Therefore, deterioration of the seal portion H due to etching gas is prevented, the period for replacing the seal portion H can be extended, and maintainability can be improved.

また従来の装置に金属製Oリングをイ・]加したたりで
足り、装置の改良は簡単である。
Furthermore, it is sufficient to add a metal O-ring to the conventional device, making it easy to improve the device.

〔実施例〕〔Example〕

第1図は本発明の一実施例になるロードロック装置20
を示す。第2図は弁体を示ず。各図中、第4図に示す構
成部分と対応でる部分には同一符号を付す。
FIG. 1 shows a load lock device 20 according to an embodiment of the present invention.
shows. Figure 2 does not show the valve body. In each figure, parts corresponding to those shown in FIG. 4 are given the same reference numerals.

21は金属製Oリングであり、弁体12のうちカス吐出
口14より内側で目つ閉弁時に着座面17のうちウェハ
搬入口4に臨む部位に取り付けである。
Reference numeral 21 denotes a metal O-ring, which is attached to a portion of the seating surface 17 that faces the wafer inlet 4 when the valve is closed, inside the waste discharge port 14 of the valve body 12.

この金属製Oリング21は、シール作用はせず、上記環
状空間18の出口である端部隙間を狭くするためのもの
であり、径d1はシール部材であるOリング13の径d
2より若干小さい。
This metal O-ring 21 does not have a sealing effect, but is used to narrow the end gap that is the outlet of the annular space 18, and its diameter d1 is the diameter d of the O-ring 13, which is a sealing member.
Slightly smaller than 2.

ロードロック装置20は、第1図に示すにうに、Oリン
グ13が着座面17に押圧し、金属製Oリング21が着
座面17に近接して閉弁状態とされる。
In the load lock device 20, as shown in FIG. 1, the O-ring 13 presses against the seating surface 17, and the metal O-ring 21 approaches the seating surface 17, so that the valve is closed.

これにより、第1図中左側を着座面17.右側を弁体1
2.外周側を○リング13.内周側を金属製Oリング1
4により仕切られ、内周側に端部隙間23を有する長円
のトラック形状の環状空間22が形成される。
As a result, the left side in FIG. 1 becomes the seating surface 17. Valve body 1 on the right side
2. ○ ring on the outer circumference side 13. Metal O-ring 1 on the inner circumference
4, an oval track-shaped annular space 22 having an end gap 23 on the inner circumferential side is formed.

この端部隙間23の幅q2は、従来の場合Q1より金属
製Oリング14の径d1の分生なく、実際には0.5m
以下と狭い。
In the conventional case, the width q2 of this end gap 23 is actually 0.5 m, without the difference of the diameter d1 of the metal O-ring 14 from Q1 in the conventional case.
Narrow as below.

このため、ドライエツチング時、ガス吐出口14より環
状空間22内に吐出した不活性ガスは矢印24で示すよ
うに上記隙間23を通ってウェハ搬入口4側に流れ出す
Therefore, during dry etching, the inert gas discharged from the gas discharge port 14 into the annular space 22 flows through the gap 23 to the wafer loading port 4 side as shown by arrow 24.

隙間23の幅g2が狭いため、この部分での不活性ガス
の流れは従来に比べて相当速くになり、エツチングガス
の上記空間22内への進入を阻止する力はその分強くな
る。
Since the width g2 of the gap 23 is narrow, the flow of the inert gas in this portion becomes considerably faster than in the conventional case, and the force for preventing the etching gas from entering the space 22 becomes stronger accordingly.

このため、矢印25で示すように、エツチングガスは上
記隙間23に近づ゛くが、上記の速い流れ15により矢
印25Aで示すように押しやられ、空間22内には進入
しない。
Therefore, the etching gas approaches the gap 23 as shown by the arrow 25, but is pushed away by the fast flow 15 as shown by the arrow 25A and does not enter the space 22.

この結果、0リング13がエツチングガスにより腐食さ
れて早期に劣化することを防1することが出来る。
As a result, it is possible to prevent the O-ring 13 from being corroded by the etching gas and causing early deterioration.

このように、Oリング13の早期の劣化を防止すること
が出来るため、ロードロック装置10はシール性を長期
間に亘って紺持することが出来るものどなり、0リング
13を定期的に交換する期間を従来の場合よりも長くす
ることが出来、保守性が従来のものに比べて大幅に改善
される。
In this way, early deterioration of the O-ring 13 can be prevented, so the load-lock device 10 can maintain its sealing performance for a long period of time, and the O-ring 13 must be replaced regularly. The period can be made longer than in the conventional case, and maintainability is greatly improved compared to the conventional case.

ま7j根状の弁体12に金属!110リング21を取り
句けられたものであり、弁体12の形状を変える必要は
なく、従来の弁体12をそのまま使うことができる。
7j Root-shaped valve body 12 is metal! 110 ring 21, there is no need to change the shape of the valve body 12, and the conventional valve body 12 can be used as is.

〔発明の効果〕〔Effect of the invention〕

以上説明した様に、本発明によれば、隙間を流れる不活
性ガスの流速が速J:ることになり、Tツチングガスが
シール部材まで〒ることを効果的に防止することが出来
る。これにより、シール部材のエツヂングガスによる劣
化が防止され、シール部材の交換期間を長くすることが
出来、保守性を改善することが出来る。
As explained above, according to the present invention, the flow rate of the inert gas flowing through the gap is J:, and it is possible to effectively prevent the T-filling gas from reaching the sealing member. This prevents the seal member from deteriorating due to the etching gas, lengthens the replacement period for the seal member, and improves maintainability.

また、現在稼動中の装置に金属[0リングを取りイ」け
るだけで足り、容易に実施することが出来る。
In addition, it is sufficient to simply remove the metal 0 ring from the equipment currently in operation, making it easy to carry out.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例になるロードロック装置を示
す図、 第2図は第1図中弁体を取り出して示す図、第3図は本
発明のロードロック装置を適用しうる半導体処理装置を
示す図、 第4図は従来のロードロック装置を示す図である。 図において、 1はCVD室、 4はつ1ハ搬入口、 11はケーシング、 12は弁体、 13はOリング、 14はガス吐出1]、 17は着座面、 20はロードロック装置、 21は金属製リング、 22は環状空間、 23は端部隙間、 24は不活性ガスの流れ、 25.25Aはエッヂングガスの流れ を示す。 ’I−ITfB’中4トΔ寸(芝取りとしてホ1プ5つ
第2図 ′°−本 7へ、   4へ− 〜         [二二二宍!二二° “ ■ オ(来のロードロッ)帳t1示1倒 113図
FIG. 1 is a diagram showing a load lock device according to an embodiment of the present invention, FIG. 2 is a diagram showing a valve body taken out from FIG. 1, and FIG. 3 is a semiconductor device to which the load lock device of the present invention can be applied. FIG. 4 is a diagram showing a conventional load lock device. In the figure, 1 is a CVD chamber, 4 is a loading port, 11 is a casing, 12 is a valve body, 13 is an O-ring, 14 is a gas discharge 1], 17 is a seating surface, 20 is a load lock device, and 21 is a 22 is an annular space, 23 is an end gap, 24 is an inert gas flow, and 25.25A is an edging gas flow. 'I-ITfB' Medium 4 To Δ Dimensions (5 hops as grass removal Fig. 2'° - To Book 7, To 4 - ~ [222 Shishi! 22° " ■ O (Next Road Drop) Book t1 showing 1 down 113 figures

Claims (1)

【特許請求の範囲】  半導体処理室(1)のウェハ搬入口(4)を開閉する
ロードロック装置において、 弁体(12)に、閉弁状態において、着座面(17)の
うち上記ウェハ搬入口(4)を囲繞する部位を押圧する
シール部材(13)を設け、且つ該弁体(12)のうち
上記シール部材(13)の内側部分に形成したガス吐出
口(14)より不活性ガスを吐出させると共に、 上記弁体(12)のうち、上記ガス吐出口(14)より
内側の部位に、閉弁状態において、上記着座面(17)
との間に隙間を有して該着座面(17)と対向する金属
製Oリング(21)を設けてなり、閉弁状態で、該金属
製Oリング(21)と上記着座面(17)との間に隙間
(23)が形成され、上記不活性ガスが該隙間(23)
を通して上記ウェハ搬入口(4)側に流出する構成とし
たことを特徴とする半導体処理室のロードロック装置。
[Claims] In a load lock device for opening and closing a wafer loading port (4) of a semiconductor processing chamber (1), a valve body (12) is connected to the wafer loading port of a seating surface (17) in a closed state. (4) is provided, and an inert gas is supplied from a gas discharge port (14) formed in the inner part of the seal member (13) of the valve body (12). At the same time, in a closed state, the seating surface (17) is placed on a portion of the valve body (12) inside the gas discharge port (14).
A metal O-ring (21) is provided facing the seating surface (17) with a gap between the metal O-ring (21) and the seating surface (17) in the closed state. A gap (23) is formed between the inert gas and the gap (23).
A load lock device for a semiconductor processing chamber, characterized in that the load lock device is configured to flow through the wafer loading port (4) side.
JP14313788A 1988-06-10 1988-06-10 Load locking device of semiconductor treating device Pending JPH01312074A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14313788A JPH01312074A (en) 1988-06-10 1988-06-10 Load locking device of semiconductor treating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14313788A JPH01312074A (en) 1988-06-10 1988-06-10 Load locking device of semiconductor treating device

Publications (1)

Publication Number Publication Date
JPH01312074A true JPH01312074A (en) 1989-12-15

Family

ID=15331789

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14313788A Pending JPH01312074A (en) 1988-06-10 1988-06-10 Load locking device of semiconductor treating device

Country Status (1)

Country Link
JP (1) JPH01312074A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6048154A (en) * 1996-10-02 2000-04-11 Applied Materials, Inc. High vacuum dual stage load lock and method for loading and unloading wafers using a high vacuum dual stage load lock
WO2008139937A1 (en) * 2007-05-08 2008-11-20 Tokyo Electron Limited Valve and processing device with the valve
WO2009060756A1 (en) * 2007-11-06 2009-05-14 Tohoku University Plasma treatment apparatus and external air shielding vessel
JP2009252635A (en) * 2008-04-09 2009-10-29 Tokyo Electron Ltd Sealing structure of plasma processing apparatus, sealing method, and plasma processing apparatus

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6048154A (en) * 1996-10-02 2000-04-11 Applied Materials, Inc. High vacuum dual stage load lock and method for loading and unloading wafers using a high vacuum dual stage load lock
US6254328B1 (en) 1996-10-02 2001-07-03 Applied Materials, Inc. High vacuum dual stage load lock and method for loading and unloading wafers using a high vacuum dual stage load lock
WO2008139937A1 (en) * 2007-05-08 2008-11-20 Tokyo Electron Limited Valve and processing device with the valve
JPWO2008139937A1 (en) * 2007-05-08 2010-08-05 東京エレクトロン株式会社 Valve and processing apparatus provided with the valve
JP5011382B2 (en) * 2007-05-08 2012-08-29 東京エレクトロン株式会社 Valve and processing apparatus provided with the valve
WO2009060756A1 (en) * 2007-11-06 2009-05-14 Tohoku University Plasma treatment apparatus and external air shielding vessel
JP2009252635A (en) * 2008-04-09 2009-10-29 Tokyo Electron Ltd Sealing structure of plasma processing apparatus, sealing method, and plasma processing apparatus

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