JPH01305391A - Neutral particle injecting apparatus - Google Patents
Neutral particle injecting apparatusInfo
- Publication number
- JPH01305391A JPH01305391A JP63136518A JP13651888A JPH01305391A JP H01305391 A JPH01305391 A JP H01305391A JP 63136518 A JP63136518 A JP 63136518A JP 13651888 A JP13651888 A JP 13651888A JP H01305391 A JPH01305391 A JP H01305391A
- Authority
- JP
- Japan
- Prior art keywords
- neutral particle
- vacuum
- ion beam
- neutral
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000007935 neutral effect Effects 0.000 title claims abstract description 38
- 239000002245 particle Substances 0.000 title claims abstract description 37
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 24
- 238000006386 neutralization reaction Methods 0.000 claims description 24
- 238000002347 injection Methods 0.000 claims description 11
- 239000007924 injection Substances 0.000 claims description 11
- 238000004364 calculation method Methods 0.000 claims description 3
- 230000003472 neutralizing effect Effects 0.000 abstract 3
- 238000005259 measurement Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000009795 derivation Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野]
二の発明は、ターゲットに中性粒子ビームを入射させて
中性粒子を注入する中性粒子注入装置に関し、特にその
中性粒子ビームのビーム量を求める手段に関する。[Detailed Description of the Invention] [Industrial Application Field] The second invention relates to a neutral particle injection device that injects neutral particles by making a neutral particle beam incident on a target, and particularly relates to a neutral particle injection device that injects neutral particles by injecting a neutral particle beam into a target. Concerning means for determining quantities.
第3図は、従来の中性粒子注入装置の一例を示す概略図
である。FIG. 3 is a schematic diagram showing an example of a conventional neutral particle injection device.
この装置は、イオン源2から引き出したイオンビーム4
aを分析電磁石6で質量分析して所望質量のイオンから
成るイオンビーム4bを選択的に導出し、これを中性化
室8に導いてそこで中性化するようにしている。This device consists of an ion beam 4 extracted from an ion source 2.
A is mass-analyzed by an analysis electromagnet 6 to selectively derive an ion beam 4b consisting of ions of a desired mass, which is led to a neutralization chamber 8 and neutralized there.
即ち中性化室8内には流量調節器11を通してアルゴン
等のガス12が導入され、イオンビーム4bをこのガス
分子と衝突させると荷電変換が行われてその一部が中性
化される。即ち中性粒子ビーム16が作られる。尚、こ
の中性化室8の上流側および下流側は、周辺の真空度を
損なわないようにコンダクタンスを小さくするスリット
9および10で仕切られている。That is, a gas 12 such as argon is introduced into the neutralization chamber 8 through a flow rate regulator 11, and when the ion beam 4b collides with the molecules of this gas, charge conversion is performed and a portion of the gas is neutralized. That is, a neutral particle beam 16 is created. Note that the upstream and downstream sides of this neutralization chamber 8 are partitioned by slits 9 and 10 that reduce conductance so as not to impair the degree of vacuum around the chamber.
そして、中性化室8の下流側に偏向電極や偏向磁石のよ
うな偏向器14を設けて、中性化されなかったイオンビ
ーム4cを偏向させて中性粒子ビーム16と分離し、こ
の偏向器16を通過した中性粒子ビーム16をターゲッ
ト1日に入射させてそれに注入するようにしている。図
中の19は真空容器である。A deflector 14 such as a deflection electrode or a deflection magnet is provided on the downstream side of the neutralization chamber 8 to deflect the ion beam 4c that has not been neutralized and separate it from the neutral particle beam 16. The neutral particle beam 16 that has passed through the vessel 16 is made incident on the target and injected into it. 19 in the figure is a vacuum container.
所がこのような中性粒子注入装置においては、ターゲッ
ト18に対する中性粒子の注入量を正確に計測する具体
的な手段がこれまではなかった。However, in such a neutral particle injection device, there has been no specific means for accurately measuring the amount of neutral particles injected into the target 18.
そのため注入量の再現性も良くなかった。Therefore, the reproducibility of the injection amount was also poor.
これは、イオン注入の場合は、ターゲットに流れるイオ
ンビーム電流を計測することができ、それに基づいてそ
の注入量を正確に算出できるのに対して、中性粒子ビー
ム16をターゲット18に入射させてもそこに電流が流
れないため、ターゲット18に入射する中性粒子ビーム
16のビーム量が電流としては計測できないからである
。This is because, in the case of ion implantation, the ion beam current flowing through the target can be measured and the implantation amount can be calculated accurately based on that, whereas the neutral particle beam 16 is injected into the target 18. This is because no current flows there, so the beam amount of the neutral particle beam 16 that is incident on the target 18 cannot be measured as a current.
もしターゲット18に入射する中性粒子ビーム16のビ
ーム量が分かれば、後はイオン注入の場合と同様にして
、ターゲット18に対する中性粒子の注入量を正確に算
出することができる。If the amount of the neutral particle beam 16 that is incident on the target 18 is known, the amount of neutral particles to be implanted into the target 18 can be accurately calculated in the same manner as in the case of ion implantation.
そこでこの発明は、ターゲットに入射する中性粒子ビー
ムのビーム量を求めることができるようにした中性粒子
注入装置を提供することを目的とする。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a neutral particle injection device that can determine the amount of a neutral particle beam incident on a target.
この発明の中性粒子注入装置は、前記偏向器で偏向され
たイオンビームのビーム電流を計測するビーム電流計測
器と、前記中性化室の真空度を計測する真空計と、これ
らによって計測した前記ビーム電流および真空度ならび
に予め記憶しておいた前記中性化室におけるイオンビー
ムの中性化に関する係数に基づいて、ターゲットに導か
れる中性粒子ビームのビーム量を演算する演算装置とを
備えることを特徴とする。The neutral particle implantation device of the present invention includes a beam current measuring device that measures the beam current of the ion beam deflected by the deflector, a vacuum gauge that measures the degree of vacuum in the neutralization chamber, and a vacuum gauge that measures the degree of vacuum in the neutralization chamber. an arithmetic device that calculates the amount of the neutral particle beam guided to the target based on the beam current and degree of vacuum and a pre-stored coefficient related to neutralization of the ion beam in the neutralization chamber; It is characterized by
第1図は、この発明の一実施例に係る中性粒子注入装置
を示す概略図である。第3図の例と同一または相当する
部分には同一符号を付し、以下においては従来例との相
違点を主に説明する。FIG. 1 is a schematic diagram showing a neutral particle injection device according to an embodiment of the present invention. The same reference numerals are given to the same or corresponding parts as in the example of FIG. 3, and the differences from the conventional example will be mainly explained below.
前述したような中性化室8で中性化されずに残るイオン
ビーム、即ち偏向器14で偏向されるイオンビーム4c
のビーム電流■゛は、
1” =ToexpC−αP) ・・・ (1
)で表される。ここで、Ioは中性化室8へ入る前のイ
オンビーム4bの電流、Pは中性化室8の真空度、αは
中性化室8°におけるイオンビーム4bの中性化に関す
る係数であり、当該装置における荷電変換断面積等を表
す。The ion beam remaining without being neutralized in the neutralization chamber 8 as described above, that is, the ion beam 4c deflected by the deflector 14
The beam current ■゛ is 1" = ToexpC-αP)
). Here, Io is the current of the ion beam 4b before entering the neutralization chamber 8, P is the degree of vacuum in the neutralization chamber 8, and α is a coefficient related to neutralization of the ion beam 4b at 8° in the neutralization chamber. It represents the charge conversion cross-sectional area, etc. in the device.
従って、中性化室8を出て注入室30内のターゲット1
8に導かれる中性粒子ビーム16のビーム量Inは、
In = Io −19
= I’ (exp(αP) −L ) ・・・(2
)から求めることができる。Therefore, the target 1 leaves the neutralization chamber 8 and enters the injection chamber 30.
The beam amount In of the neutral particle beam 16 guided by
).
そこでこの実施例では、真空容器19の分岐部32内に
ファラデー系のようなビーム電流計測器20を設けて、
偏向器14で偏向されたイオンビーム4cのビーム電流
I゛を計測し、また中性化室8に真空計22を取り付け
て、中性化室8内の真空度Pを計測し、これらの値を演
算装置24内に取り込むようにしている。Therefore, in this embodiment, a beam current measuring device 20 such as a Faraday system is provided in the branch part 32 of the vacuum vessel 19.
The beam current I' of the ion beam 4c deflected by the deflector 14 is measured, and a vacuum gauge 22 is attached to the neutralization chamber 8 to measure the degree of vacuum P in the neutralization chamber 8, and these values are is taken into the arithmetic unit 24.
一方、前記係数αは、当該装置固有のものであり、しか
も中性化室8の真空度P、イオンビーム4bの種類およ
びエネルギーによって変化する。On the other hand, the coefficient α is unique to the device and changes depending on the degree of vacuum P of the neutralization chamber 8 and the type and energy of the ion beam 4b.
但し、前記(1)式を表す第2図のようなカーブを予め
実験で必要な種類だけ求めておけば、その後はそれに基
づいて、その時々の真空度P、イオンビーム4bの種類
およびエネルギーに応じた係数αを得ることができるの
で、この実施例では演算装置24内にα導出部26を設
けて、そこに上記のような何種類かのカーブを記憶して
おき、真空計22から与えられる真空度Pおよびそこに
設定される、あるいは上位の制御装置から与えられるイ
オンビーム4bの種類およびエネルギーに基づいて、そ
の時々の係数αを導出するようにしている。However, if only the necessary types of curves as shown in Fig. 2 representing the above equation (1) are obtained in advance through experiments, then the degree of vacuum P and the type and energy of the ion beam 4b can be adjusted based on it. Therefore, in this embodiment, an α derivation unit 26 is provided in the arithmetic unit 24, and several types of curves such as those described above are stored therein, and the coefficient α can be obtained from the vacuum gauge 22. The coefficient α at each time is derived based on the degree of vacuum P set there or the type and energy of the ion beam 4b given from a higher-level control device.
更に演算装置24内にはIn演算部28を設けており、
上記α導出部26から与えられる係数α、ビーム電流計
測器20から与えられるビーム電流■3および真空計2
2から与えられる真空度Pに基づいて、上記(2)式の
演算を行って、ターゲット18に入射する中性粒子ビー
ム16のビーム量Inを演算するようにしている。Furthermore, an In calculation section 28 is provided in the calculation device 24,
Coefficient α given from the α derivation section 26, beam current ■3 given from the beam current measuring device 20, and vacuum gauge 2
The beam amount In of the neutral particle beam 16 that is incident on the target 18 is calculated by calculating the above equation (2) based on the degree of vacuum P given by 2.
ちなみにこのような演算装置24は、例えばマイクロコ
ンピュータを用いて簡単に構成することができる。Incidentally, such arithmetic device 24 can be easily configured using, for example, a microcomputer.
従って上記構成によれば、ターゲット18に入射する中
性粒子ビーム16のビーム量I nを自動的かつ連続的
に、しかも正確に求めることができる。その結果、ター
ゲット18に対する中性粒子の注入量の正確な算出が可
能になり、これがひいては注入量の再現性向上にもつな
がる。Therefore, according to the above configuration, the beam amount In of the neutral particle beam 16 incident on the target 18 can be determined automatically, continuously, and accurately. As a result, it becomes possible to accurately calculate the amount of neutral particles to be injected into the target 18, which in turn leads to improved reproducibility of the amount to be injected.
以上のようにこの発明によれば、ターゲットに入射する
中性粒子ビームのビーム量を正確に求めることができる
。As described above, according to the present invention, the beam amount of the neutral particle beam incident on the target can be accurately determined.
第1図は、この発明の一実施例に係る中性粒子注入装置
を示す概略図である。第2図は、中性化室の真空度とそ
こで中性化されずに残るイオンビーム量との関係の一例
を示す図である。第3図は、従来の中性粒子注入装置の
一例を示す概略図である。
4a〜4C・・・イオンビーム、8・・・中性化室、1
4・・・偏向器、16・・・中性粒子ビーム、18・・
・ターゲット、20・・・ビーム電流計測器、22・・
・真空計、24・・・演算装置。FIG. 1 is a schematic diagram showing a neutral particle injection device according to an embodiment of the present invention. FIG. 2 is a diagram showing an example of the relationship between the degree of vacuum in the neutralization chamber and the amount of ion beam remaining without being neutralized therein. FIG. 3 is a schematic diagram showing an example of a conventional neutral particle injection device. 4a-4C...Ion beam, 8...Neutralization chamber, 1
4... Deflector, 16... Neutral particle beam, 18...
・Target, 20... Beam current measuring device, 22...
・Vacuum gauge, 24...Arithmetic device.
Claims (1)
側にあって中性化されなかったイオンビームを偏向させ
て中性粒子ビームと分離する偏向器とを備え、この偏向
器を通過した中性粒子ビームをターゲットに入射させる
よう構成した中性粒子注入装置において、前記偏向器で
偏向されたイオンビームのビーム電流を計測するビーム
電流計測器と、前記中性化室の真空度を計測する真空計
と、これらによって計測した前記ビーム電流および真空
度ならびに予め記憶しておいた前記中性化室におけるイ
オンビームの中性化に関する係数に基づいて、ターゲッ
トに導かれる中性粒子ビームのビーム量を演算する演算
装置とを備えることを特徴とする中性粒子注入装置。(1) Equipped with a neutralization chamber that neutralizes the ion beam, and a deflector located downstream of the neutralization chamber that deflects the ion beam that has not been neutralized and separates it from the neutral particle beam. In a neutral particle implanter configured to make a neutral particle beam that has passed through a neutral particle beam enter a target, a beam current measuring device that measures the beam current of the ion beam deflected by the deflector, and a vacuum in the neutralization chamber are provided. neutral particles guided to the target based on the beam current and vacuum degree measured by the vacuum gauge and a pre-stored coefficient related to neutralization of the ion beam in the neutralization chamber; A neutral particle injection device comprising: a calculation device for calculating a beam amount of a beam.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63136518A JP2621354B2 (en) | 1988-06-02 | 1988-06-02 | Neutral particle injection device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63136518A JP2621354B2 (en) | 1988-06-02 | 1988-06-02 | Neutral particle injection device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01305391A true JPH01305391A (en) | 1989-12-08 |
JP2621354B2 JP2621354B2 (en) | 1997-06-18 |
Family
ID=15177050
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63136518A Expired - Lifetime JP2621354B2 (en) | 1988-06-02 | 1988-06-02 | Neutral particle injection device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2621354B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11144671A (en) * | 1997-11-06 | 1999-05-28 | Hitachi Ltd | Ion implanting apparatus |
JP2011526065A (en) * | 2008-06-25 | 2011-09-29 | アクセリス テクノロジーズ, インコーポレイテッド | System and method for controlling broad beam uniformity |
WO2013030996A1 (en) * | 2011-08-31 | 2013-03-07 | 株式会社日立製作所 | Charged particle beam irradiation system and operating method of charged particle beam irradiation system |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6675789B2 (en) | 2017-02-27 | 2020-04-01 | 住友重機械イオンテクノロジー株式会社 | Ion implanter |
-
1988
- 1988-06-02 JP JP63136518A patent/JP2621354B2/en not_active Expired - Lifetime
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11144671A (en) * | 1997-11-06 | 1999-05-28 | Hitachi Ltd | Ion implanting apparatus |
JP2011526065A (en) * | 2008-06-25 | 2011-09-29 | アクセリス テクノロジーズ, インコーポレイテッド | System and method for controlling broad beam uniformity |
WO2013030996A1 (en) * | 2011-08-31 | 2013-03-07 | 株式会社日立製作所 | Charged particle beam irradiation system and operating method of charged particle beam irradiation system |
GB2509842A (en) * | 2011-08-31 | 2014-07-16 | Hitachi Ltd | Charged particle beam irradiation system and operating method of charged particle beam irradiation system |
JPWO2013030996A1 (en) * | 2011-08-31 | 2015-03-23 | 株式会社日立製作所 | Charged particle beam irradiation system and method of operating charged particle beam irradiation system |
US9199094B2 (en) | 2011-08-31 | 2015-12-01 | Hitachi, Ltd. | Charged particle beam irradiation system and operating method of charged particle beam irradiation system |
GB2509842B (en) * | 2011-08-31 | 2018-12-26 | Hitachi Ltd | Charged particle beam irradiation system and operating method of charged particle beam irradiation system |
Also Published As
Publication number | Publication date |
---|---|
JP2621354B2 (en) | 1997-06-18 |
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