JPH01301855A - Sputtering target - Google Patents
Sputtering targetInfo
- Publication number
- JPH01301855A JPH01301855A JP13241788A JP13241788A JPH01301855A JP H01301855 A JPH01301855 A JP H01301855A JP 13241788 A JP13241788 A JP 13241788A JP 13241788 A JP13241788 A JP 13241788A JP H01301855 A JPH01301855 A JP H01301855A
- Authority
- JP
- Japan
- Prior art keywords
- target
- target material
- backing plate
- sputtering
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005477 sputtering target Methods 0.000 title claims description 8
- 239000013077 target material Substances 0.000 claims abstract description 57
- 239000002184 metal Substances 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 abstract description 12
- 238000000034 method Methods 0.000 abstract description 3
- 238000003466 welding Methods 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 239000000047 product Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005546 reactive sputtering Methods 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- 229910000846 In alloy Inorganic materials 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明は、スパッタリング用ターゲットに関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a sputtering target.
（従来の技術）
たとえば、ガラス基板に酸化インジウム（ＩｎｚＯａ）
や酸化錫（５ｎＯｚ ）等のａ？膜を形成スル場合には
、反応性スパッタリングを行なう。(Prior art) For example, indium oxide (InzOa) is coated on a glass substrate.
or tin oxide (5nOz), etc. If the film cannot be formed, reactive sputtering is performed.
この反応性スパッタリングは、通常のスパッタリングが
、真空排気したスパッタリングチャンバ内をアルゴン（
Ａｒ）等の不活性ガスにより０．１ないし数Ｐａ程度の
低圧にした状態で行なうのに対し、第４図に示すように
、真空排気したスパッタリングチャンバ１内にアルゴン
等の不活性ガスとともに酸素（０２）や窒素（Ｎ２）等
の反応ガスを供給した状態で行なう。このあとは通常の
スパッタリングと同様に、バッキングプレート２（カソ
ード）にインジウム（Ｉｎ）や錫（Ｓｎ）等の板状のタ
ーゲット素材３を取付けたターゲット４とスパッタリン
グチャンバ１内に設けられた図示しないアノードに直流
電源５から直流電圧を印加し、プラズマ放電を発生させ
てアルゴンをイオン化する。これによって、ターゲット
素材３からインジウムや錫を放出させ、放出されたイン
ジウムや錫と酸素が反応してできた酸化インジウムや酸
化錫がターゲット４に対向させたガラス基板６の表面に
付着し、ガラス基板６に酸化インジウムや酸化錫の５１
ｇ１が形成される。This reactive sputtering differs from normal sputtering in that the evacuated sputtering chamber is filled with argon (argon gas).
In contrast, as shown in Fig. 4, oxygen is used together with an inert gas such as argon in an evacuated sputtering chamber 1, as shown in Fig. 4. (02), nitrogen (N2), or the like is supplied. After this, as in normal sputtering, a target 4 with a plate-shaped target material 3 such as indium (In) or tin (Sn) attached to a backing plate 2 (cathode) and a target (not shown) provided in the sputtering chamber 1 A DC voltage is applied to the anode from a DC power supply 5 to generate plasma discharge and ionize argon. As a result, indium and tin are released from the target material 3, and indium oxide and tin oxide, which are produced by the reaction of the released indium and tin with oxygen, adhere to the surface of the glass substrate 6 facing the target 4. 51 of indium oxide or tin oxide on the substrate 6
g1 is formed.
この反応性スパッタリングに用いるターゲット４は、第
５図に示すように、通常のスパッタリングに用いるもの
と同様に、バッキングプレート２ど５〜１０ｔｎｍ程度
の比較的に厚い板状のターゲット素材３の間に、インジ
ウム合金等のボンディング材７を挟み、はんだ付けと同
じように、加熱してボンディング０７を溶かし、冷却し
てバッキングプレート２と板状のターゲット素材３を接
着し、この後、加熱による反りの修正を行なっている。As shown in FIG. 5, the target 4 used for this reactive sputtering is placed between a backing plate 2 and a relatively thick plate-shaped target material 3 of about 5 to 10 tnm, similar to those used for normal sputtering. , a bonding material 7 such as an indium alloy is sandwiched, heated to melt the bonding material 7, and cooled to bond the backing plate 2 and the plate-shaped target material 3, in the same way as soldering. We are making corrections.
なお、ターゲット索材３は、はんだ付けの手法でバッキ
ングプレート２にボンディングするため、ある程度の厚
さを必要とし、比較的に厚い板状となる。In addition, since the target rope material 3 is bonded to the backing plate 2 by a soldering method, it requires a certain degree of thickness and becomes a relatively thick plate.
（発明が解決しようとする課題）
ところで、反応性スパッタリングでは、スパッタリング
チャンバ１に酸素等の反応ガスを導入するため、アルゴ
ン等の不活性ガスのみの通常のスパッタリングと比較し
て、つぎのような問題がある。(Problems to be Solved by the Invention) By the way, in reactive sputtering, a reactive gas such as oxygen is introduced into the sputtering chamber 1, so compared to normal sputtering using only an inert gas such as argon, the following problems occur. There's a problem.
■ 反応ガスによりターゲット４のターゲット素材３の
表面に反応生成物ができるため、５〜１０ａ＋＋程度の
厚さのターゲット素材３が１ｍ＋＋程度しか消耗しない
うちに放電異常をぎたして寿命どなり、単位使用時間当
りのコストが人となる。■ Because reaction products are formed on the surface of the target material 3 of the target 4 due to the reaction gas, the target material 3 with a thickness of about 5 to 10 a++ is consumed only about 1 m++ before it reaches a discharge abnormality and reaches the end of its life, and the unit cannot be used. The cost per hour is per person.
■ ターゲット４の使用時間が短いため、頻繁にターゲ
ット４の交換が必要になるにもかかわらず、ターゲット
４の製造方法が複雑で納期が長いため、多量のターゲッ
ト４の在庫が必要となる。(2) Since the usage time of the target 4 is short, it is necessary to frequently replace the target 4. However, since the manufacturing method of the target 4 is complicated and the delivery time is long, a large amount of the target 4 is required to be kept in stock.
■ ターゲット４のターゲット素材３の表面に反応生成
物ができるため、ターゲット素材３の回収が困ガとなり
、ターゲット素材３の使用効率が低い。(2) Reaction products are formed on the surface of the target material 3 of the target 4, making it difficult to recover the target material 3, and the efficiency of using the target material 3 is low.
■ ターゲット素材３及びはんだ付けと同様のボンディ
ング費用が高価なため、表面状態が劣化したターゲット
索材３を長く使用したり、ターゲット素材３の表面を削
り取って再使用したりするため、スパッタリングのｍ質
低下を招き、製品の品質を劣化させる。（製品の製造歩
留りの低下につながる。）
■ ターゲット素材３の消耗にしたがって、スパッタレ
ートが変化し、膜質のばらつきが大きくなるとともに、
ＩＰＪ買が劣化し、製品の製造小舅りが低下づる。■ Since the target material 3 and bonding costs similar to soldering are expensive, it is necessary to use the target material 3 whose surface condition has deteriorated for a long time, or to scrape off the surface of the target material 3 and reuse it. This leads to quality deterioration and deteriorates the quality of the product. (This will lead to a decrease in the manufacturing yield of the product.) ■ As the target material 3 is consumed, the sputtering rate will change, and the film quality will vary widely.
IPJ purchasing is deteriorating, and product manufacturing costs are declining.
本発明は、このような点に鑑み成されたもので、ターゲ
ット素材の使用効率を向上すること、及び、ターゲット
を容易かつ安価に製造できるようにすることを目的とす
るものである。The present invention has been made in view of these points, and aims to improve the usage efficiency of target materials and to enable targets to be manufactured easily and at low cost.
（課題を解決１′るための手段）
本発明のスパッタリング用ターゲットは、金属から成る
ターゲラ］・素材を取付けてこのターゲット素材に電力
を供給するバッキングプレートの上記ターゲット素材の
取付面に凹凸を形成し、このバッキングプレートのター
ゲット素材の取付面に薄板状のターゲット素材を加圧し
て接着したものである。(Means for Solving Problem 1') The sputtering target of the present invention is a target material made of metal] - Forming irregularities on the mounting surface of the target material of the backing plate to which the material is attached and which supplies power to the target material. A thin plate-shaped target material is bonded to the target material mounting surface of the backing plate under pressure.
（作用）
本発明のスパッタリング用ターゲットは、バッキングプ
レートと薄板状のターゲット素材の加圧による接着力を
、取付面の凹凸により強化するものぐある。(Function) The sputtering target of the present invention strengthens the adhesive force between the backing plate and the thin plate-like target material by applying pressure by using the unevenness of the mounting surface.
（実施例）
本発明のスパッタリング用ターゲットの−・実施例を第
１図及び第２図を参照して説明する。(Example) An example of the sputtering target of the present invention will be described with reference to FIGS. 1 and 2.
１１は無酸素鋼でできたバッキングプレートで、このバ
ッキングプレート１１の上面には取付面１２が突設され
、この取付面１２には凹凸を形成する深さ０、 １ｍの
ｖ字状の溝１３が０．５ｍのピッチで必や目状（格子状
）に形成されている。Reference numeral 11 denotes a backing plate made of oxygen-free steel. A mounting surface 12 is protruded from the upper surface of the backing plate 11, and a V-shaped groove 13 with a depth of 0.1 m and a depth of 1 m forms an uneven surface. are formed in a grid pattern with a pitch of 0.5 m.
そして、このバッキングプレート１１の取付面１２上に
、金属たとえばインジウムと錫の合金でできた厚さ１．
５ｒＲ１Ｒの薄板状のターゲット素材１４を配置し、こ
れらを図示しない定盤の上に重ねてセットし、加圧ロー
ラ１５によりターゲット素材１４の幅に対し１０Ａｆｇ
／αの荷重で加圧してバンキングプレート１１の取付面
１２にターゲット素材１４を接着し、これによって、タ
ーゲット１６を製造する。Then, on the mounting surface 12 of this backing plate 11, a thickness of 1.5 mm is made of a metal such as an alloy of indium and tin.
A thin plate-like target material 14 of 5rR1R is arranged, set on top of a surface plate (not shown), and a pressure roller 15 is applied to the width of the target material 14 by 10Afg.
The target material 14 is adhered to the mounting surface 12 of the banking plate 11 by applying pressure with a load of /α, thereby manufacturing the target 16.
なお、上記のバッキングプレート１１とターゲット素材
１４の接着に際しては、パッキングブレート１１の取付
面１２の満１３にターゲット索材１４が食込むことと、
溝１３によりバッキングプレート１１とターゲット素材
１４の接触面積が増加していることとによって、接着力
が増し、十分な接着力が得られるようになっており、加
熱しないので、反りが発生することもなく、従来のはん
だ付けの手法に比べて、ターゲット１６を容易かつ安価
に製造することができる。In addition, when bonding the backing plate 11 and the target material 14, the target cable material 14 bites into the mounting surface 12 of the packing plate 11.
By increasing the contact area between the backing plate 11 and the target material 14 due to the grooves 13, the adhesive strength increases and sufficient adhesive strength can be obtained, and since no heating is required, warping may occur. Therefore, the target 16 can be manufactured more easily and at a lower cost than conventional soldering methods.
次に、この本発明の実施例のターゲット１６と第５図に
示した従来のターゲット４を、第４図に示したような装
置に用いて、ガラス基板６に薄膜を形成するために反応
性スパッタリングを行なった場合を第３図で比較する。Next, the target 16 of this embodiment of the present invention and the conventional target 4 shown in FIG. 5 are used in the apparatus shown in FIG. The case where sputtering is performed is compared in FIG.
ターゲット４，１６は、反応ガスに酸素を用いた状態で
、放電させてスパッタリングを行なうと、ターゲット素
材３．１４の表面の消耗と酸化が進行し、ターゲット素
材３．１４の消耗ｌａが１Ｍ以下の状態で、酸化による
放電異常をきたし、使用できなくなる。When the targets 4 and 16 are sputtered by discharging in a state where oxygen is used as a reaction gas, the surface of the target material 3.14 is consumed and oxidized, and the consumption la of the target material 3.14 is 1M or less. Under these conditions, discharge abnormalities occur due to oxidation and the product becomes unusable.
このとき、従来のターゲット４では、ターゲット素材３
の５〜１０ｍの厚さｂに対して１＃Ｉ以下の消耗量ａで
使用できなくなり、ターゲット素材３の使用効率が低い
ため、ターゲット素材３の表面を削って再使用を図るが
、ターゲット素材３を削る際に、ターゲット素材３の表
面に不純物が混入することにより、再使用した場合には
、膜質が劣化し、また、ターゲット素材３の厚さが変化
するため、冷Ｆ！Ｉ効率や放電距離が変化し、膜質のば
らつきが大となる。At this time, in the conventional target 4, the target material 3
For a thickness b of 5 to 10 m, the target material 3 becomes unusable when the amount of wear is less than 1 #I, and the usage efficiency of the target material 3 is low. 3, impurities get mixed into the surface of the target material 3, and if it is reused, the film quality will deteriorate and the thickness of the target material 3 will change. The I efficiency and discharge distance change, and the film quality varies greatly.
これに対して、本発明のターゲット１６は、ターゲット
素材１４を加圧によってバッキングプレート１１に接着
するため、ターゲット素材１４の厚さを薄くすることが
でき、たとえば、この実施例では、酸化による放電異常
を起こして、使用できなくなるときのターゲット素材１
４の消耗量ａを１−として、これに０．５ｍを加えた１
、５ｍをターゲット素材１４の厚さＣとしているので、
ターゲット素材１４の使用効率が高くなり、しかも、再
使用の必要がなく、使い捨てにできるため、再使用した
場合の、膜質の劣化や、膜質のばらつきがなくなる。In contrast, in the target 16 of the present invention, the target material 14 is bonded to the backing plate 11 by pressure, so the thickness of the target material 14 can be reduced. Target material 1 when something goes wrong and it becomes unusable
The consumption amount a of 4 is set as 1-, and 0.5m is added to this.
, 5m is the thickness C of the target material 14, so
The use efficiency of the target material 14 is increased, and since it is disposable without the need for reuse, deterioration of film quality and variation in film quality when reused are eliminated.
なお、使用後のターゲット１６については、加熱しない
で、ターゲット素材１４をバッキングプレート１１から
容易に引き剥がすことができる。Note that the target material 14 can be easily peeled off from the backing plate 11 without heating the target 16 after use.
このように、バッキングプレート１１にターゲット素材
１４を圧＠づるので、
ボンディング費用が安価になり、ターゲット１６のコス
トを低減でき、
反りのない高精度のターゲット１６ができ、信頼性が増
し、
ターゲット１６の製造納期が短縮され、大量の在庫が不
要で、在庫管理が容易になる。In this way, since the target material 14 is pressed against the backing plate 11, the bonding cost is reduced, the cost of the target 16 can be reduced, a highly accurate target 16 without warping can be produced, reliability is increased, and the target 16 is The manufacturing delivery time is shortened, large amounts of inventory are not required, and inventory management becomes easier.
そして、薄板状のターゲット素材１４を使用できるので
、
ターゲット素材１４の使用効率が増し、材料費が低減さ
れ、
安定した放電状態での使用となり、膜質が良くなり、製
品品質が向上し、高い歩留りが得られ、ターゲット素材
１４の製造が容易となる。In addition, since the target material 14 in the form of a thin plate can be used, the efficiency of using the target material 14 is increased, the material cost is reduced, and it can be used in a stable discharge state, resulting in better film quality, improved product quality, and a higher yield. is obtained, and the target material 14 can be manufactured easily.
また、使い捨てにできるため、
表面の切削等の不純物混入要素がなく、膜質が安定し、
製品品質が向上し、高い歩留りが得られ、
ターゲット１６が大気に接触する機会を少なくでき、水
分その他の不純物の混入や表面の酸化等を防止でき、製
品品質が向上し、高い歩留りが得られる。In addition, because it is disposable, there are no impurity factors such as surface cutting, and the film quality is stable.
The product quality is improved and a high yield is obtained.The opportunity for the target 16 to come into contact with the atmosphere can be reduced, and the contamination of moisture and other impurities and the oxidation of the surface can be prevented.The product quality is improved and a high yield is obtained. .
なお、この実施例では、バッキングプレート１１の取付
面１２の凹凸を、深さ０．１１１１１１のｖ字状の溝１
３によって形成したが、これに限らず、Ｕ字状の溝で形
成したり、単純な凹部と凸部で形成してもよく、また、
凹凸の深さも、ターゲット素材１４の厚さや材質によっ
て変えるが、ターゲット素材１４の厚さを０．１〜３１
ＩＩＩとして、凹凸の深さは５０μｍ〜０．３ｍとする
。In this embodiment, the unevenness of the mounting surface 12 of the backing plate 11 is formed into a V-shaped groove 1 with a depth of 0.111111.
3, but is not limited to this, it may be formed with a U-shaped groove, or may be formed with a simple concave part and a convex part,
The depth of the unevenness also changes depending on the thickness and material of the target material 14, but the thickness of the target material 14 is 0.1 to 31 mm.
As III, the depth of the unevenness is 50 μm to 0.3 m.
また、本発明のターゲット１６は、反応性スパッタリン
グに用いるだけでなく、通常のスパッタリングに用いて
も有効である。Further, the target 16 of the present invention is effective not only for use in reactive sputtering but also for ordinary sputtering.
（発明の効果）
上述したように、本発明によれば、ターゲット素材をバ
ッキングプレートに圧着することによって、スパッタリ
ング用ターゲットを製造するので、ターゲットを容易か
つ安価に製造でき、そして、薄板状のターゲット素材を
使用するので、ターゲット素材の使用効率を向上するこ
とができ、さらに、ターゲラ１〜を再使用する必要がな
く、使い捨でにできるため、再使用に伴う、膜質の劣化
や、膜質のばらつきがなくなる。(Effects of the Invention) As described above, according to the present invention, a sputtering target is manufactured by press-bonding a target material to a backing plate, so that the target can be manufactured easily and inexpensively. Since target materials are used, the efficiency of using target materials can be improved.Furthermore, there is no need to reuse Targetera 1~, and it is disposable, so there is no possibility of deterioration of film quality due to reuse. Dispersion is eliminated.
第１図は本発明のスパッタリング用ターゲットの−・実
施例を示す分解斜視図、第２図はその製造方法を示す側
面図、第３図は従来のターゲットと本発明のターゲット
の使用効率を比較する説明図、第４図は反応性スパッタ
リングの説明図、第５図は従来のターゲットの側面図で
ある。
１１・◆バッキングプレート、１２・・取付面、１３・
・凹凸を形成する溝、１４・・ターゲット素材、１６・
・ターゲット。
厚ヱ１」Fig. 1 is an exploded perspective view showing an embodiment of the sputtering target of the present invention, Fig. 2 is a side view showing its manufacturing method, and Fig. 3 is a comparison of the usage efficiency of the conventional target and the target of the present invention. FIG. 4 is an explanatory diagram of reactive sputtering, and FIG. 5 is a side view of a conventional target. 11・◆Backing plate, 12・Mounting surface, 13・
・Groove for forming unevenness, 14. Target material, 16.
·target. Thickness 1"
Claims (1)
ゲット素材に電力を供給するバッキングプレートの上記
ターゲット素材の取付面に凹凸を形成し、このバッキン
グプレートのターゲット素材の取付面に薄板状のターゲ
ット素材を加圧して接着したことを特徴とするスパッタ
リング用ターゲット。(1) A backing plate to which a target material made of metal is attached and which supplies power to the target material is provided with unevenness on the mounting surface of the target material, and a thin plate-shaped target material is formed on the mounting surface of the target material of this backing plate. A sputtering target characterized by being bonded under pressure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13241788A JPH01301855A (en) | 1988-05-30 | 1988-05-30 | Sputtering target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13241788A JPH01301855A (en) | 1988-05-30 | 1988-05-30 | Sputtering target |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01301855A true JPH01301855A (en) | 1989-12-06 |
Family
ID=15080888
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13241788A Pending JPH01301855A (en) | 1988-05-30 | 1988-05-30 | Sputtering target |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01301855A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996033294A1 (en) * | 1995-04-21 | 1996-10-24 | Materials Research Corporation | Method of making sputter target/backing plate assembly |
| US5803342A (en) * | 1996-12-26 | 1998-09-08 | Johnson Matthey Electronics, Inc. | Method of making high purity copper sputtering targets |
| US5863398A (en) * | 1996-10-11 | 1999-01-26 | Johnson Matthey Electonics, Inc. | Hot pressed and sintered sputtering target assemblies and method for making same |
| US6274015B1 (en) | 1996-12-13 | 2001-08-14 | Honeywell International, Inc. | Diffusion bonded sputtering target assembly with precipitation hardened backing plate and method of making same |
| US6451185B2 (en) | 1998-08-12 | 2002-09-17 | Honeywell International Inc. | Diffusion bonded sputtering target assembly with precipitation hardened backing plate and method of making same |
| US6555250B2 (en) | 1997-03-19 | 2003-04-29 | Honeywell International Inc. | Ni-plated target diffusion bonded to a backing plate and method of making same |
| WO2007059546A2 (en) * | 2005-11-23 | 2007-05-31 | Plansee Metall Gmbh | Method for producing a tubular target |
-
1988
- 1988-05-30 JP JP13241788A patent/JPH01301855A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996033294A1 (en) * | 1995-04-21 | 1996-10-24 | Materials Research Corporation | Method of making sputter target/backing plate assembly |
| US5863398A (en) * | 1996-10-11 | 1999-01-26 | Johnson Matthey Electonics, Inc. | Hot pressed and sintered sputtering target assemblies and method for making same |
| US6274015B1 (en) | 1996-12-13 | 2001-08-14 | Honeywell International, Inc. | Diffusion bonded sputtering target assembly with precipitation hardened backing plate and method of making same |
| US5803342A (en) * | 1996-12-26 | 1998-09-08 | Johnson Matthey Electronics, Inc. | Method of making high purity copper sputtering targets |
| US6555250B2 (en) | 1997-03-19 | 2003-04-29 | Honeywell International Inc. | Ni-plated target diffusion bonded to a backing plate and method of making same |
| US6451185B2 (en) | 1998-08-12 | 2002-09-17 | Honeywell International Inc. | Diffusion bonded sputtering target assembly with precipitation hardened backing plate and method of making same |
| WO2007059546A2 (en) * | 2005-11-23 | 2007-05-31 | Plansee Metall Gmbh | Method for producing a tubular target |
| WO2007059546A3 (en) * | 2005-11-23 | 2007-11-01 | Plansee Metall Gmbh | Method for producing a tubular target |
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